CN209881638U - Converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate - Google Patents
Converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate Download PDFInfo
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- CN209881638U CN209881638U CN201920898276.4U CN201920898276U CN209881638U CN 209881638 U CN209881638 U CN 209881638U CN 201920898276 U CN201920898276 U CN 201920898276U CN 209881638 U CN209881638 U CN 209881638U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The utility model relates to a frequency converter power cabinet based on a separated insulated gate bipolar IGBT driving structure, belonging to the technical field of wind power plant frequency converter power cabinets; the technical problem to be solved is as follows: the improvement of a frequency converter power cabinet structure and a control hardware structure based on a separated insulated gate bipolar IGBT driving structure is provided; the technical scheme for solving the technical problem is as follows: including the power cabinet body, the power cabinet body is the layered structure, the power cabinet body has set gradually by last to down: the transistor gate electrode protection device, the gate electrode driving device and the fan cooling module; the bottom of the fan cooling module is provided with a frequency converter fan, the frequency converter fan is connected with an air inducing groove through an air channel, and an air outlet of the air inducing groove is connected with a gate electrode driving device; a gate driving circuit board is arranged in the gate driving device, and a driving controller is integrated on the gate driving circuit board; the utility model discloses be applied to wind-powered electricity generation field converter power cabinet.
Description
Technical Field
The utility model relates to a converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate belongs to wind-powered electricity generation field converter power cabinet technical field.
Background
The ABB frequency converter is applied to the traditional industries such as steel, cement, chemical industry, papermaking and the like at the earliest, an electric room for installing the frequency converter is provided with a purifying room and is provided with an air conditioner cooling and dehumidifying system, the frequency converter is ensured to operate in a working environment meeting conditions, and meanwhile, the ABB frequency converter is compact in structure, small and exquisite and has a size which is 1/3 smaller than that of frequency converters of other brands.
The existing wind power generation device is also provided with the frequency converter, the frequency converter cannot be provided with a purification room and an air conditioner for temperature control independently due to the operating environment and the structural design particularity of a wind turbine generator, and due to the compact structure of the ABB frequency converter, if the heat dissipation conditions of various components in the ABB frequency converter are poor, the frequency converter can be in an over-high-temperature operating state for a long time.
The frequency converter runs at a high temperature for a long time, aging of a gate driver board AGDR is accelerated, control failure of the gate driver board AGDR on an insulated gate bipolar transistor IGBT is finally caused, the frequency converter frequently reports a power module SC short circuit fault, the insulated gate bipolar transistor IGBT is exploded seriously in severe cases, the IGBT is extremely destructive in explosion, explosion arc light of the frequency converter can cause damage to a plurality of peripheral board cards, great loss is brought to customers, and the cost of production, operation and maintenance of the frequency converter is high; therefore, it is necessary to improve the structure and function of the frequency converter applied to the wind turbine.
SUMMERY OF THE UTILITY MODEL
The utility model discloses an overcome not enough that exists among the prior art, the technical problem that will solve is: the utility model provides an improvement of converter power cabinet structure and control hardware structure based on bipolar IGBT drive structure of disconnect-type insulated gate.
In order to solve the technical problem, the utility model discloses a technical scheme be: the utility model provides a converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate, includes the power cabinet body, the power cabinet body is the layered structure, the power cabinet body has set gradually by last to down: the transistor gate electrode protection device, the gate electrode driving device and the fan cooling module;
the bottom of the fan cooling module is provided with a frequency converter fan, the frequency converter fan is connected with an air inducing groove through an air channel, and an air outlet of the air inducing groove is connected with a gate electrode driving device;
a gate driving circuit board is arranged in the gate driving device, a driving controller is integrated on the gate driving circuit board, and a signal output end of the driving controller is connected with the transistor gate protection device after being sequentially connected with the isolation level converter, the driver and the field effect transistor controller in series;
and the power supply input end of the driving controller is connected with the power supply module.
The chip used by the drive controller is a drive control chip U1, the chips used by the isolation level converter are converters U2 and U3, the chip used by the driver is a drive chip U4, and the chip used by the field effect transistor controller is a control chip U5;
the gate driving device has the circuit structure that:
a pin 44 of the drive control chip U1 is connected with one end of a resistor R502 in parallel and then connected with a pin 1 of a converter U2, a pin 6 of the converter U2 is connected with one end of a capacitor C501 in parallel, and one end of a resistor R503 is connected with a 5V power supply input end in parallel;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then is connected with the 4 pin of the driving chip U4;
a pin 2 of the drive control chip U1 is connected with one end of the resistor R501 in parallel and then connected with a pin 1 of the converter U3, a pin 6 of the converter U3 is connected with one end of the resistor R504 in parallel and then connected with a 5V power supply input end, and the other end of the resistor R504 is connected with a pin 5 of the converter U3 in parallel and then connected with a pin 2 of the drive chip U4;
the 5 feet of the driving chip U4 are connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then connected with the 4 feet of the control chip U5,
the 7 pins of the driving chip U4 are connected in series with the resistor R505 and then connected with the 2 pins of the control chip U5;
a pin 3 of the control chip U5 is connected with one end of the resistor R507 and then is connected with a VCC power supply input end;
a pin 1 of the control chip U5 is connected with one end of a resistor R509 in parallel, and an emitter of the triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the voltage stabilizing diode V504, and the anode of the voltage stabilizing diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector of the triode V505 is connected with one end of a resistor R510;
the pins 5, 6, 7 and 8 of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device;
the other end of the resistor R510 is connected with the anode of the diode V506 in parallel and then connected with pins 5, 6, 7 and 8 of the control chip U5, the cathode of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508 in parallel.
And a level NAND gate module is also arranged between the isolation level shifter and the driver, and the model of the level NAND gate module is 74H 02.
The chips used in the power supply module are voltage regulators U6 and U7; the circuit structure of the power supply module is as follows:
a pin 1 of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of the capacitor C510 is connected with the output end of the VCC power supply;
a pin 2 of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of a capacitor C512 and the anode of a diode V508 and then grounded;
a pin 3 of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of a capacitor C511, the other end of a capacitor C510, the other end of a capacitor C512, and the cathode of a diode V508, and then connected with a COM power supply output end;
a pin 1 of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then is connected with a 5V power supply output end;
the pin 2 of the voltage stabilizer U7 is connected with the pins 3, 6 and 7 of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is connected with the rear end of the capacitor C516 and then is grounded;
and the pin 8 of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then is connected with a VCC power supply input end.
The model of the drive control chip U1 is EPM7032 STC;
the types of the converters U2 and U3 are TLP 2768A;
the model of the driving chip U4 is FAN 3278;
the model of the control chip U5 is FDS 8958;
the model of the voltage stabilizer U6 is 78M 09;
the model number of the voltage stabilizer U7 is 78L 05.
The utility model discloses beneficial effect for prior art possesses does: the utility model discloses a to current double-fed converter power cabinet that is applied to wind turbine generator system carry out structural transformation and upgrade, can effectively reduce the converter fault rate, avoid wind field SC class trouble and module to explode the quick-witted accident and take place, improve the reliability of converter system operation simultaneously, improve wind resource utilization, improve the wind field generated energy; use the utility model provides a converter power cabinet can reduce the spare parts loss, practices thrift manufacturing cost to effectively reduce wind field staff's intensity of labour.
Drawings
The present invention will be further explained with reference to the accompanying drawings:
fig. 1 is a schematic structural diagram of a conventional double-fed frequency converter power cabinet;
FIG. 2 is a schematic structural view of the present invention;
fig. 3 is a schematic diagram of the circuit structure of the present invention;
fig. 4 is a circuit diagram of the driving controller of the present invention;
FIG. 5 is a circuit diagram of the gate driving device of the present invention;
fig. 6 is a circuit diagram of the power module of the present invention;
in the figure: the power cabinet is 1, the transistor gate electrode protection device is 2, the transistor gate electrode driving device is 3, the fan cooling module is 4, the frequency converter fan is 5, the air guide groove is 6, the driving controller is 7, the isolation level converter is 8, the driver is 9, the field effect transistor controller is 10, and the power supply module is 11.
Detailed Description
As shown in fig. 1 to 6, the utility model relates to a converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate, including the power cabinet body 1, the power cabinet body 1 is the layered structure, the power cabinet body 1 has set gradually by last to down: a transistor gate electrode protection device 2, a gate electrode driving device 3 and a fan cooling module 4;
the bottom of the fan cooling module 4 is provided with a frequency converter fan 5, the frequency converter fan 5 is connected with an induced draft groove 6 through an air channel, and an air outlet of the induced draft groove 6 is connected with the gate electrode driving device 3;
a gate driving circuit board is arranged in the gate driving device 3, a driving controller 7 is integrated on the gate driving circuit board, and a signal output end of the driving controller 7 is connected with the transistor gate protection device 2 after being sequentially connected with an isolation level converter 8, a driver 9 and a field effect transistor controller 10 in series;
and the power supply input end of the driving controller 7 is connected with the power supply module 11.
The chip used by the driving controller 7 is a driving control chip U1, the chips used by the isolated level shifter 8 are converters U2 and U3, the chip used by the driver 9 is a driving chip U4, and the chip used by the field effect transistor controller 10 is a control chip U5;
the gate driving device 3 has a circuit structure as follows:
a pin 44 of the drive control chip U1 is connected with one end of a resistor R502 in parallel and then connected with a pin 1 of a converter U2, a pin 6 of the converter U2 is connected with one end of a capacitor C501 in parallel, and one end of a resistor R503 is connected with a 5V power supply input end in parallel;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then is connected with the 4 pin of the driving chip U4;
a pin 2 of the drive control chip U1 is connected with one end of the resistor R501 in parallel and then connected with a pin 1 of the converter U3, a pin 6 of the converter U3 is connected with one end of the resistor R504 in parallel and then connected with a 5V power supply input end, and the other end of the resistor R504 is connected with a pin 5 of the converter U3 in parallel and then connected with a pin 2 of the drive chip U4;
the 5 feet of the driving chip U4 are connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then connected with the 4 feet of the control chip U5,
the 7 pins of the driving chip U4 are connected in series with the resistor R505 and then connected with the 2 pins of the control chip U5;
a pin 3 of the control chip U5 is connected with one end of the resistor R507 and then is connected with a VCC power supply input end;
a pin 1 of the control chip U5 is connected with one end of a resistor R509 in parallel, and an emitter of the triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the voltage stabilizing diode V504, and the anode of the voltage stabilizing diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector of the triode V505 is connected with one end of a resistor R510;
the pins 5, 6, 7 and 8 of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device 3;
the other end of the resistor R510 is connected with the anode of the diode V506 in parallel and then connected with pins 5, 6, 7 and 8 of the control chip U5, the cathode of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508 in parallel.
A level nand gate module is further arranged between the isolation level shifter 8 and the driver 9, and the model of the level nand gate module is 74H 02.
The chips used in the power supply module 11 are voltage regulators U6 and U7; the circuit structure of the power module 11 is as follows:
a pin 1 of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of the capacitor C510 is connected with the output end of the VCC power supply;
a pin 2 of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of a capacitor C512 and the anode of a diode V508 and then grounded;
a pin 3 of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of a capacitor C511, the other end of a capacitor C510, the other end of a capacitor C512, and the cathode of a diode V508, and then connected with a COM power supply output end;
a pin 1 of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then is connected with a 5V power supply output end;
the pin 2 of the voltage stabilizer U7 is connected with the pins 3, 6 and 7 of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is connected with the rear end of the capacitor C516 and then is grounded;
and the pin 8 of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then is connected with a VCC power supply input end.
The model of the drive control chip U1 is EPM7032 STC;
the types of the converters U2 and U3 are TLP 2768A;
the model of the driving chip U4 is FAN 3278;
the model of the control chip U5 is FDS 8958;
the model of the voltage stabilizer U6 is 78M 09;
the model number of the voltage stabilizer U7 is 78L 05.
As shown in fig. 1, in order to solve the technical problem that the wind field frequency converter is easy to have over-temperature fault, the utility model provides a double-fed frequency converter power cabinet, which is structurally improved on a frequency converter power unit module, and the power cabinet radiator is enlarged by combining a power unit gate pole drive board of the frequency converter and an IGBT module in a separated mode, so that a heat dissipation air channel is more smooth; the gate driver board operates at a high temperature for a long time to cause accelerated aging, the internal temperature of the IGBT can reach 80-100 ℃ during operation, and the working temperature of the gate driver board is reduced to effectively reduce the failure rate of the frequency converter due to the fact that the existing gate driver board is tightly attached to the IGBT, the temperature is high during full-power operation, and damage to the gate driver board and electronic components is large.
The utility model discloses a with gate pole drive plate and insulated gate bipolar transistor IGBT separation, increase the drive protection shield, make the gate pole drive plate keep away from the source IGBT that generates heat to install gate pole drive plate main part in the position that is close to the cooling fan air outlet, ensure that the gate pole drive plate possesses good heat dissipation condition, increase of service life effectively solves the three high problems of converter in wind-powered electricity generation is used, can effectively reduce the fault rate of converter, greatly reduce spare parts consumption, effectively reduce manufacturing cost, improve fan generating efficiency.
The utility model discloses repack IGBT gate pole drive plate to induced draft groove upper end, namely former fan power supply board department, demolish former fan power supply board and frequency conversion board, can make the gate pole drive plate keep away from the IGBT heat source, install the gate pole drive plate to the cooling fan air outlet and make it possess good heat dissipation condition, let gate pole drive plate operating temperature more be close to ambient temperature;
in the refitting process, the fan power panel and the frequency conversion panel of the original system are removed, so that the consumption of spare parts in the later period can be reduced, a fan control circuit is added, the fan control system is changed into the power frequency of 380V for working, the ventilation volume can be increased, and the heat dissipation effect is improved; the structure of a control circuit on the gate electrode driving board is improved, the driving main body control circuit is separated from the IGBT main body, a special protection board is designed, the separated IGBT is arranged on the special gate electrode protection board, the reliability of the driving circuit is further improved, the connection mode of a control flat cable is changed, and the interference is reduced while the electromagnetic compatibility is considered.
The installation structure is improved, meanwhile, a gate pole driving device and a driving board working power supply are improved, the driving board working power supply is improved, a special power supply control chip is adopted for control, the power supply is more stable in operation, and the loss and the heat productivity are smaller;
the program chip EPM7032STC used in the drive controller can improve a pulse signal processing circuit, so that the triggering and transmission of a gate trigger signal are more reliable, and the loss and the heat productivity of a drive plate are reduced;
in the actual wiring process of the drive controller circuit, the pin 44 and the pin 2 of the drive control chip U1 are connected with one path of isolation level converter, and the pin 11 and the pin 10 of the drive control chip U1 are also connected with the other path of isolation level converter, so that the control requirement of the double-fed frequency converter can be met, and the signal output ends of the two paths of control loops are connected with the transistor gate pole protection device finally.
The drive controller adopts an integrated logic chip, reduces board card fault points, enables the system to run more reliably, can improve the upper limit of the working temperature of the control chip, and upgrades the upper limit of the working temperature from 85 ℃ to 125 ℃.
On the other hand, because the flat cable junction of former gate pole drive plate is close to female arranging of direct current, because the AGDR drive plate is hugged closely with IGBT, the winding displacement links to each other with power module control panel AINT and power strip APOW, when the IGBT takes place to explode the quick-witted accident, high voltage direct current will burn out AINT and APOW through flat cable, the utility model discloses a change flat cable's mounted position, with flat cable control cable repacking to module below, damage circuit board and components and parts are evaded when can effectively the occurence of failure.
Furthermore, the utility model discloses improve APOW power module, the power supply of all control panels of module is provided by the APOW integrated circuit board, and the module is required to operate steadily, must guarantee the stability of power supply, the utility model discloses improve the power strip control structure, increase excessive pressure and undervoltage protection function, improved power interference killing feature, the operation is more stable;
the utility model discloses also improve IGBT gate protection device simultaneously, adopt fourth generation IGBT module FS500R17OE4D to replace original FS450R17KE3 module, make its operating current promote 50A, internally mounted enhancement mode freewheel diode promotes the protective properties, and adopted slot gate and field stop layer structure, can reduce saturation voltage, maintain switching speed, and reduce chip thickness, increase power density, promote the anti high current impact ability of module; compared with the IGBT turn-off waveform, the waveform of the fourth generation IGBT is smoother than that of the third generation IGBT, and the fourth generation IGBT has obvious soft characteristic, so that the IGBT module runs more stably;
by improving the wire bonding process inside the module, under the working condition of the switch, the highest allowable junction temperature specification of the fourth generation module is 150 ℃, the current output capability of the module is increased by 25 ℃ compared with the specification of the third generation module (1200V and 1700V), the power cycle frequency is increased, and the reliability is further improved.
The novel low-viscosity single-component organic silicon phenyl resin three-proofing paint is adopted on the surface of the gate driving device, has good high and low temperature resistance and strong adhesive force, can protect a circuit board and related equipment from being corroded by the environment, has higher surface resistance and volume resistance, and can provide good insulation protection effect for the circuit board even under the humid condition; the cured paint film has good corrosion resistance effect on mechanical impact, sediments, moisture, dust, corrosive gas and the like, and can be suitable for harsh applicable conditions of wind power, automobiles, ships and the like.
The utility model discloses reform transform converter fan control circuit and external power supply simultaneously, demolish fan power supply board and the frequency conversion board of former system, use as spare parts, increase fan control circuit, change fan control system into power frequency 380V work, extension fan life increases the air volume, reduces converter operating temperature.
The utility model adopts a special half-bridge driving chip FAN3278 to replace the original gate driving board to use the chip, the FAN3278 is a dual-channel 1.5A gate driver, and is improved aiming at driving a high-end P-channel MOSFET and a low-end N-channel MOSFET in the motor control application with the highest value of a voltage track of 27V; the driver is provided with TTL input limitation, provides buffering and level conversion of logic input, and an internal circuit can prevent the output switch device from working when VDD power supply voltage is lower than IC working voltage and keeps an external field effect tube in a closed state between starting intervals when a logic control signal does not appear;
the FAN3278 driver has the characteristics that when VDD is lower than an operating voltage, each load device is biased to be closed by using a 100k omega resistor, a threshold value is input by using low-voltage TTL, and when no input is input, an internal resistor keeps the driver to be closed.
The utility model discloses a new driver chip is changed into FDS8958 field effect transistor controller by IRF7309, can promote drive current to 7A-5A by original 4A-3ATI, and response speed promotes to 9.7NS fast.
The utility model discloses on the basis of improving gate pole signal input circuit, the follow-up upgrading of product of being convenient for, the opto-coupler input parameter is kept apart in the cooperation readjustment, can effectively improve life.
About the utility model discloses what the concrete structure need explain, the utility model discloses a each part module connection relation each other is definite, realizable, except that the special explanation in the embodiment, its specific connection relation can bring corresponding technological effect to based on do not rely on under the prerequisite of corresponding software program execution, solve the utility model provides a technical problem, the utility model provides a model, the connection mode of parts, module, specific components and parts that appear all belong to the prior art such as the published patent that technical staff can acquire before the application day, published journal paper, or common general knowledge, need not to describe in detail for the technical scheme that the present case provided is clear, complete, realizable, and can be according to this technical means or obtain corresponding entity product.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (5)
1. The utility model provides a converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate which characterized in that: including the power cabinet body (1), the power cabinet body (1) is the layered structure, the power cabinet body (1) has set gradually by last to down: the device comprises a transistor gate pole protection device (2), a gate pole driving device (3) and a fan cooling module (4);
the bottom of the fan cooling module (4) is provided with a frequency converter fan (5), the frequency converter fan (5) is connected with an air inducing groove (6) through an air channel, and an air outlet of the air inducing groove (6) is connected with the gate pole driving device (3);
a gate driving circuit board is arranged in the gate driving device (3), a driving controller (7) is integrated on the gate driving circuit board, and a signal output end of the driving controller (7) is connected with the transistor gate protection device (2) after being sequentially connected with the isolation level converter (8), the driver (9) and the field effect transistor controller (10) in series;
and the power supply input end of the driving controller (7) is connected with the power supply module (11).
2. The frequency converter power cabinet based on the separated insulated gate bipolar IGBT driving structure according to claim 1, characterized in that: the chip used by the drive controller (7) is a drive control chip U1, the chips used by the isolation level shifter (8) are converters U2 and U3, the chip used by the driver (9) is a drive chip U4, and the chip used by the field effect transistor controller (10) is a control chip U5;
the gate driving device (3) has the circuit structure that:
a pin 44 of the drive control chip U1 is connected with one end of a resistor R502 in parallel and then connected with a pin 1 of a converter U2, a pin 6 of the converter U2 is connected with one end of a capacitor C501 in parallel, and one end of a resistor R503 is connected with a 5V power supply input end in parallel;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then is connected with the 4 pin of the driving chip U4;
a pin 2 of the drive control chip U1 is connected with one end of the resistor R501 in parallel and then connected with a pin 1 of the converter U3, a pin 6 of the converter U3 is connected with one end of the resistor R504 in parallel and then connected with a 5V power supply input end, and the other end of the resistor R504 is connected with a pin 5 of the converter U3 in parallel and then connected with a pin 2 of the drive chip U4;
the 5 feet of the driving chip U4 are connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then connected with the 4 feet of the control chip U5,
the 7 pins of the driving chip U4 are connected in series with the resistor R505 and then connected with the 2 pins of the control chip U5;
a pin 3 of the control chip U5 is connected with one end of the resistor R507 and then is connected with a VCC power supply input end;
a pin 1 of the control chip U5 is connected with one end of a resistor R509 in parallel, and an emitter of the triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the voltage stabilizing diode V504, and the anode of the voltage stabilizing diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector of the triode V505 is connected with one end of a resistor R510;
the pins 5, 6, 7 and 8 of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device (3);
the other end of the resistor R510 is connected with the anode of the diode V506 in parallel and then connected with pins 5, 6, 7 and 8 of the control chip U5, the cathode of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508 in parallel.
3. The frequency converter power cabinet based on the separated insulated gate bipolar IGBT driving structure according to claim 2, characterized in that: and a level NAND gate module is further arranged between the isolation level shifter (8) and the driver (9), and the type of the level NAND gate module is 74H 02.
4. The frequency converter power cabinet based on the separated insulated gate bipolar IGBT driving structure according to claim 3, characterized in that: the chips used in the power supply module (11) are voltage regulators U6 and U7; the circuit structure of the power supply module (11) is as follows:
a pin 1 of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of the capacitor C510 is connected with the output end of the VCC power supply;
a pin 2 of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of a capacitor C512 and the anode of a diode V508 and then grounded;
a pin 3 of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of a capacitor C511, the other end of a capacitor C510, the other end of a capacitor C512, and the cathode of a diode V508, and then connected with a COM power supply output end;
a pin 1 of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then is connected with a 5V power supply output end;
the pin 2 of the voltage stabilizer U7 is connected with the pins 3, 6 and 7 of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is connected with the rear end of the capacitor C516 and then is grounded;
and the pin 8 of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then is connected with a VCC power supply input end.
5. The frequency converter power cabinet based on the separated insulated gate bipolar IGBT driving structure according to claim 4, characterized in that: the model of the drive control chip U1 is EPM7032 STC;
the types of the converters U2 and U3 are TLP 2768A;
the model of the driving chip U4 is FAN 3278;
the model of the control chip U5 is FDS 8958;
the model of the voltage stabilizer U6 is 78M 09;
the model number of the voltage stabilizer U7 is 78L 05.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920898276.4U CN209881638U (en) | 2019-06-14 | 2019-06-14 | Converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920898276.4U CN209881638U (en) | 2019-06-14 | 2019-06-14 | Converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209881638U true CN209881638U (en) | 2019-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920898276.4U Withdrawn - After Issue CN209881638U (en) | 2019-06-14 | 2019-06-14 | Converter power cabinet based on bipolar IGBT drive structure of disconnect-type insulated gate |
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| CN (1) | CN209881638U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098719A (en) * | 2019-06-14 | 2019-08-06 | 山西恒信风光新能源技术有限公司 | Wind power plant transducer power cabinet based on the bipolar IGBT driving structure of separating insulated grid |
-
2019
- 2019-06-14 CN CN201920898276.4U patent/CN209881638U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098719A (en) * | 2019-06-14 | 2019-08-06 | 山西恒信风光新能源技术有限公司 | Wind power plant transducer power cabinet based on the bipolar IGBT driving structure of separating insulated grid |
| CN110098719B (en) * | 2019-06-14 | 2024-07-30 | 山西恒信风光新能源技术有限公司 | Wind power plant frequency converter power cabinet based on separated insulated gate bipolar IGBT driving structure |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20191231 Effective date of abandoning: 20240730 |