CN110086330B - Wind power plant frequency converter power unit based on separated insulated gate bipolar IGBT driving structure - Google Patents
Wind power plant frequency converter power unit based on separated insulated gate bipolar IGBT driving structure Download PDFInfo
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- CN110086330B CN110086330B CN201910517170.XA CN201910517170A CN110086330B CN 110086330 B CN110086330 B CN 110086330B CN 201910517170 A CN201910517170 A CN 201910517170A CN 110086330 B CN110086330 B CN 110086330B
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- 239000003381 stabilizer Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000003973 paint Substances 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
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- 238000010248 power generation Methods 0.000 description 1
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- 230000001960 triggered effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
- Y02E10/76—Power conversion electric or electronic aspects
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Abstract
The invention discloses a wind power plant frequency converter power unit based on a separated insulated gate bipolar IGBT driving structure, and belongs to the technical field of wind power plant frequency converter power units; the technical problems to be solved are as follows: the hardware structure of the power unit of the wind power plant frequency converter based on the separated insulated gate bipolar IGBT driving structure is improved; the technical scheme adopted for solving the technical problems is as follows: the transistor gate protection device and the gate driving device are arranged in the cabinet body; the gate driving device is internally provided with a gate driving circuit board, a driving controller is integrated on the gate driving circuit board, and a signal output end of the driving controller is sequentially connected with an isolation level converter, a driver and a field effect transistor controller in series and then is connected with a transistor gate protection device; the power input end of the driving controller is connected with the power module; the invention is applied to the wind power plant frequency converter.
Description
Technical Field
The invention discloses a wind power plant frequency converter power unit based on a separated insulated gate bipolar IGBT driving structure, and belongs to the technical field of wind power plant frequency converter power units.
Background
The ABB frequency converter is firstly applied to the traditional industry such as the industries of steel, cement, chemical industry, paper making and the like, an electric room for installing the frequency converter is provided with an air conditioner cooling and dehumidifying system at the same time, the frequency converter is ensured to operate in a working environment meeting the conditions, and meanwhile, the ABB frequency converter is compact in structure, small and exquisite, and the size is 1/3 of the volume of the frequency converter compared with frequency converters of other brands.
The prior wind power generation device is also provided with the type of frequency converter, because of the special operating environment and structural design of the wind turbine generator, a purifying room and an air conditioner for temperature control cannot be independently arranged for the frequency converter, and because of the internal circuit structure and power consumption of the ABB frequency converter, if the heat dissipation condition is bad, the frequency converter is easy to overheat in the operation process of the frequency converter, the frequency converter operates in a high-temperature state for a long time, the aging of a gate driving plate AGDR can be accelerated, the failure of the gate driving plate AGDR on the IGBT control of the IGBT is finally caused, the frequency converter frequently reports the short circuit fault of a power module SC, the IGBT is exploded and destroyed when serious, the explosion of the IGBT is extremely large, the arc light of the explosion can cause the connection damage of a plurality of surrounding boards, and great loss is brought to customers, so that the cost for producing, operating and maintaining the frequency converter is very high; therefore, improvement on the structure and the function of the frequency converter applied to the wind turbine generator is needed.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and solves the technical problems that: the hardware structure of the power unit of the wind power plant frequency converter based on the separated insulated gate bipolar IGBT driving structure is improved.
In order to solve the technical problems, the invention adopts the following technical scheme: the wind power plant frequency converter power unit based on the separated insulated gate bipolar IGBT driving structure comprises a transistor gate protection device and a gate driving device which are arranged in a cabinet body;
the gate driving device is internally provided with a gate driving circuit board, a driving controller is integrated on the gate driving circuit board, and a signal output end of the driving controller is sequentially connected with an isolation level converter, a driver and a field effect transistor controller in series and then is connected with a transistor gate protection device;
the power input end of the driving controller is connected with the power module;
the chip used by the drive controller is a drive control chip U1, the chips used by the isolation level converter are converters U2 and U3, the chip used by the driver is a drive chip U4, and the chip used by the field effect transistor controller is a control chip U5;
the gate electrode driving device has a circuit structure as follows:
the 44 pins of the driving control chip U1 are connected with one end of a resistor R502 in parallel and then connected with the 1 pin of a converter U2, the 6 pins of the converter U2 are connected with one end of a capacitor C501 in parallel and one end of a resistor R503 is connected with the 5V power input end;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then connected with the 4 pin of the driving chip U4;
the 2 pins of the driving control chip U1 are connected with one end of a resistor R501 in parallel and then connected with the 1 pin of a converter U3, the 6 pins of the converter U3 are connected with one end of a resistor R504 in parallel and then connected with a 5V power input end, and the other end of the resistor R504 is connected with the 5 pins of the converter U3 in parallel and then connected with the 2 pins of a driving chip U4;
the pin 5 of the driving chip U4 is connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then is connected with the pin 4 of the control chip U5,
the 7 pins of the driving chip U4 are connected with the resistor R505 in series and then connected with the 2 pins of the control chip U5;
the 3 pins of the control chip U5 are connected with one end of a resistor R507 in parallel and then connected with the input end of the VCC power supply;
the 1 pin of the control chip U5 is connected with one end of a resistor R509 in parallel, and the emitter of a triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the zener diode V504, and the anode of the zener diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector electrode of the triode V505 is connected with one end of a resistor R510;
the 5 feet, the 6 feet, the 7 feet and the 8 feet of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device;
the other end of the resistor R510 is connected with the positive pole of the diode V506 in parallel and then is connected with the 5 pins, the 6 pins, the 7 pins and the 8 pins of the control chip U5, the negative pole of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508.
And a level NAND gate module is further arranged between the isolation level converter and the driver, and the model of the level NAND gate module is 74H02.
The chips used in the power supply module are voltage regulators U6 and U7; the circuit structure of the power supply module is as follows:
the 1 pin of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of a capacitor C510 is connected with the output end of the VCC power supply;
the 2 pin of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of the capacitor C512 and the positive electrode of a diode V508 are grounded;
the 3 pin of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of the capacitor C511, the other end of the capacitor C510 and the other end of the capacitor C512 are connected with the output end of a COM power supply after the negative electrode of a diode V508;
the 1 pin of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then connected with the 5V power supply output end;
the 2 feet of the voltage stabilizer U7 are connected with the 3 feet, the 6 feet and the 7 feet of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is grounded after one end of the capacitor C516 is grounded;
the 8 pin of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then connected with the input end of the VCC power supply.
The model of the driving control chip U1 is EPM7032STC;
the model of the converters U2 and U3 is TLP2768A;
the model of the driving chip U4 is FAN3278;
the model of the control chip U5 is FDS8958;
the model of the voltage stabilizer U6 is 78M09;
the model of the voltage stabilizer U7 is 78L05.
Compared with the prior art, the invention has the following beneficial effects: according to the invention, the existing doubly-fed frequency converter applied to the wind turbine generator is structurally modified and upgraded, so that the frequency converter fault rate can be effectively reduced, the SC type faults of the wind farm and the module explosion accidents are avoided, meanwhile, the running reliability of the frequency converter system is improved, the wind farm generating capacity is improved, the spare part loss is reduced, the production cost is saved, and the labor intensity of wind farm workers is effectively reduced.
Drawings
The invention is further described below with reference to the accompanying drawings:
FIG. 1 is a schematic diagram of a circuit structure of the present invention;
FIG. 2 is a circuit diagram of a drive controller according to the present invention;
FIG. 3 is a circuit diagram of a gate driving device according to the present invention;
FIG. 4 is a circuit diagram of a power module of the present invention;
in the figure: the transistor gate protection device 1, the driving controller 3, the isolation level converter 4, the driver 5, the field effect transistor controller 6 and the power supply module 7.
Detailed Description
As shown in fig. 1 to 4, the wind power plant frequency converter power unit based on the separated insulated gate bipolar IGBT driving structure comprises a transistor gate protection device (1) and a gate driving device, wherein the transistor gate protection device and the gate driving device are arranged in a cabinet body;
the gate driving device is internally provided with a gate driving circuit board, a driving controller (3) is integrated on the gate driving circuit board, and a signal output end of the driving controller (3) is sequentially connected with an isolation level converter (4), a driver (5) and a field effect transistor controller (6) in series and then is connected with a transistor gate protection device (1);
the power input end of the driving controller (3) is connected with the power module (7);
the chip used by the drive controller (3) is a drive control chip U1, the chips used by the isolation level converter (4) are converters U2 and U3, the chip used by the driver (5) is a drive chip U4, and the chip used by the field effect transistor controller (6) is a control chip U5;
the gate electrode driving device has a circuit structure as follows:
the 44 pins of the driving control chip U1 are connected with one end of a resistor R502 in parallel and then connected with the 1 pin of a converter U2, the 6 pins of the converter U2 are connected with one end of a capacitor C501 in parallel and one end of a resistor R503 is connected with the 5V power input end;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then connected with the 4 pin of the driving chip U4;
the 2 pins of the driving control chip U1 are connected with one end of a resistor R501 in parallel and then connected with the 1 pin of a converter U3, the 6 pins of the converter U3 are connected with one end of a resistor R504 in parallel and then connected with a 5V power input end, and the other end of the resistor R504 is connected with the 5 pins of the converter U3 in parallel and then connected with the 2 pins of a driving chip U4;
the pin 5 of the driving chip U4 is connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then is connected with the pin 4 of the control chip U5,
the 7 pins of the driving chip U4 are connected with the resistor R505 in series and then connected with the 2 pins of the control chip U5;
the 3 pins of the control chip U5 are connected with one end of a resistor R507 in parallel and then connected with the input end of the VCC power supply;
the 1 pin of the control chip U5 is connected with one end of a resistor R509 in parallel, and the emitter of a triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the zener diode V504, and the anode of the zener diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector electrode of the triode V505 is connected with one end of a resistor R510;
the 5 feet, the 6 feet, the 7 feet and the 8 feet of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device;
the other end of the resistor R510 is connected with the positive pole of the diode V506 in parallel and then is connected with the 5 pins, the 6 pins, the 7 pins and the 8 pins of the control chip U5, the negative pole of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508.
And a level NAND gate module is further arranged between the isolation level converter (4) and the driver (5), and the model of the level NAND gate module is 74H02.
The chips used in the power supply module (7) are voltage regulators U6 and U7; the circuit structure of the power supply module (7) is as follows:
the 1 pin of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of a capacitor C510 is connected with the output end of the VCC power supply;
the 2 pin of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of the capacitor C512 and the positive electrode of a diode V508 are grounded;
the 3 pin of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of the capacitor C511, the other end of the capacitor C510 and the other end of the capacitor C512 are connected with the output end of a COM power supply after the negative electrode of a diode V508;
the 1 pin of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then connected with the 5V power supply output end;
the 2 feet of the voltage stabilizer U7 are connected with the 3 feet, the 6 feet and the 7 feet of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is grounded after one end of the capacitor C516 is grounded;
the 8 pin of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then connected with the input end of the VCC power supply.
The model of the driving control chip U1 is EPM7032STC;
the model of the converters U2 and U3 is TLP2768A;
the model of the driving chip U4 is FAN3278;
the model of the control chip U5 is FDS8958;
the model of the voltage stabilizer U6 is 78M09;
the model of the voltage stabilizer U7 is 78L05.
In order to solve the technical problem that the wind field frequency converter is easy to generate over-temperature faults, the gate driving plate and the insulated gate bipolar transistor IGBT are separated, the driving protection plate is added, so that the gate driving plate is far away from the heating source IGBT, and the main body of the gate driving plate is arranged at a position close to the wind outlet of the cooling wind, so that the gate driving plate is ensured to have good heat dissipation conditions;
in the refitting process, the fan power panel and the frequency conversion panel of the original system are removed, so that the consumption of later spare parts can be reduced, a fan control circuit is increased, the fan control system is changed into working at power frequency of 380V, the ventilation quantity can be increased, and the heat dissipation effect is improved; the control circuit on the gate drive plate is structurally improved, the drive main body control circuit is separated from the IGBT main body, the special protection plate is designed, the separated IGBT is arranged on the special gate protection plate, the reliability of the drive circuit is further improved, the connection mode of the control flat cable is changed, and electromagnetic compatibility is considered and interference is reduced.
The improved mounting structure improves the gate driving device and the driving plate working power supply, improves the driving plate working power supply, adopts a special power supply control chip for control, and has more stable power supply operation and smaller loss and heating value;
the program chip EPM7032STC used in the drive controller can improve a pulse signal processing circuit, so that the gate trigger signal is triggered and transmitted more reliably, and the loss and the heating value of a drive plate are reduced;
in the actual wiring process of the drive controller circuit, the 44 pin and the 2 pin of the drive control chip U1 are connected with one path of isolation level converter, meanwhile, the 11 pin and the 10 pin of the drive control chip U1 are also connected with the other path of isolation level converter, so that the control requirement of the doubly-fed frequency converter can be met, and the signal output ends of the two paths of control loops are finally connected with the transistor gate protection device.
The driving controller adopts an integrated logic chip, reduces fault points of the board card, ensures that the system operates more reliably, can raise the upper limit of the working temperature of the control chip, and upgrades the upper limit of the working temperature from 85 degrees to 125 degrees.
On the other hand, because the flat cable connection position of the original gate electrode driving plate is closer to the direct current busbar, and because the AGDR driving plate is clung to the IGBT, the flat cable is connected with the power module control board AINT and the power panel APOW, when the IGBT has a frying accident, the AINT and the APOW can be burnt out by the high-voltage direct current through the flat cable.
Furthermore, the APOW power supply module is improved, the power supply of all control boards of the module is provided by an APOW board card, the module needs to run stably and the stability of a power supply must be ensured;
the invention also improves the IGBT gate protection device, adopts the fourth generation IGBT module FS500R17OE4D to replace the original FS450R17KE3 module, improves the working current by 50A, internally installs the enhanced freewheel diode, improves the protection performance, adopts the trench gate and field stop layer structure, can reduce the saturation voltage, maintain the switching speed, reduce the thickness of a chip, increase the power density and improve the high current impact resistance of the module; compared with the IGBT turn-off waveform, the waveform of the four-generation IGBT is smoother than that of the three-generation IGBT, and the four-generation IGBT presents obvious soft characteristic, so that the IGBT module operates more stably;
by improving the wire bonding process inside the module, the highest allowable junction temperature specification of the fourth generation module is 150 degrees under the switch working condition, which is 25 ℃ higher than the specification of the third generation module (1200V and 1700V), the current output capacity of the module is increased, the power cycle times are increased, and the reliability is further improved.
The novel low-viscosity single-component organic silicon phenyl resin three-proofing paint is adopted on the surface of the gate driving device, has good high and low temperature resistance and strong adhesive force, can protect a circuit board and related equipment from being corroded by the environment, has high surface resistance and volume resistance, and can provide good insulation protection effect for the circuit board even under a humid condition; the cured paint film has very good corrosion resistance to mechanical impact, sediment, moisture, dust, corrosive gas and the like, and can be suitable for severe applicable conditions such as wind power, automobiles, ships and the like.
The invention simultaneously reforms the fan control circuit of the frequency converter and the external power supply, removes the fan power board and the frequency conversion board of the original system, uses the frequency conversion board as spare parts, increases the fan control circuit, changes the fan control system into working at power frequency of 380V, prolongs the service life of the fan, increases the ventilation quantity and reduces the running temperature of the frequency converter.
The invention adopts a special half-bridge driving chip FAN3278 to replace an original gate electrode driving plate to use a chip, wherein FAN3278 is a dual-channel 1.5A gate electrode driver, and is improved by driving a high-end P-channel MOSFET and a low-end N-channel MOSFET in motor control application with a highest voltage track value of 27V; the driver has TTL input limit, provides buffer and level conversion of logic input, and its internal circuit can prevent output switch device from working when VDD power supply voltage is lower than IC working voltage, and can keep external FET in off state between starting intervals when logic control signal is not present;
the FAN3278 driver has the characteristics that when the VDD is lower than the working voltage, each load device is biased to be closed by using a 100k omega resistor, a threshold value is input to the low-voltage TTL, and when no input is input, the internal resistor keeps the driver closed.
The novel driving chip used in the invention is replaced by the FDS8958 field effect transistor controller from IRF7309, so that the driving current can be improved from original 4A-3ATI to 7A-5A, and the response speed is improved to 9.7NS.
On the basis of improving the gate signal input circuit, the invention is convenient for the subsequent upgrading of products, and can effectively prolong the service life by matching with readjusting the input parameters of the isolation optocoupler.
The specific structure of the invention needs to be described that the connection relation between the component modules adopted by the invention is definite and realizable, and besides the specific description in the embodiment, the specific connection relation can bring corresponding technical effects, and solves the technical problems of the invention on the premise of not depending on the execution of corresponding software programs.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (3)
1. Wind-powered electricity generation field converter power unit based on bipolar IGBT drive structure of disconnect-type insulated gate, its characterized in that: comprises a transistor gate electrode protection device (1) and a gate electrode driving device which are arranged in a cabinet body;
the gate driving device is internally provided with a gate driving circuit board, a driving controller (3) is integrated on the gate driving circuit board, and a signal output end of the driving controller (3) is sequentially connected with an isolation level converter (4), a driver (5) and a field effect transistor controller (6) in series and then is connected with a transistor gate protection device (1);
the power input end of the driving controller (3) is connected with the power module (7);
the chip used by the drive controller (3) is a drive control chip U1, the chips used by the isolation level converter (4) are converters U2 and U3, the chip used by the driver (5) is a drive chip U4, and the chip used by the field effect transistor controller (6) is a control chip U5;
the model of the driving control chip U1 is EPM7032STC;
the model of the converters U2 and U3 is TLP2768A;
the model of the driving chip U4 is FAN3278;
the model of the control chip U5 is FDS8958;
the gate electrode driving device has a circuit structure as follows:
the 44 pins of the driving control chip U1 are connected with one end of a resistor R502 in parallel and then connected with the 1 pin of a converter U2, the 6 pins of the converter U2 are connected with one end of a capacitor C501 in parallel and one end of a resistor R503 is connected with the 5V power input end;
the 5 pin of the converter U2 is connected with the other end of the resistor R503 in parallel and then connected with the 4 pin of the driving chip U4;
the 2 pins of the driving control chip U1 are connected with one end of a resistor R501 in parallel and then connected with the 1 pin of a converter U3, the 6 pins of the converter U3 are connected with one end of a resistor R504 in parallel and then connected with a 5V power input end, and the other end of the resistor R504 is connected with the 5 pins of the converter U3 in parallel and then connected with the 2 pins of a driving chip U4;
the pin 5 of the driving chip U4 is connected with one end of a resistor R506, the other end of the resistor R506 is connected with one end of a resistor R508 in parallel and then is connected with the pin 4 of the control chip U5,
the 7 pins of the driving chip U4 are connected with the resistor R505 in series and then connected with the 2 pins of the control chip U5;
the 3 pins of the control chip U5 are connected with one end of a resistor R507 in parallel and then connected with the input end of the VCC power supply;
the 1 pin of the control chip U5 is connected with one end of a resistor R509 in parallel, and the emitter of a triode V505 is grounded;
the other end of the resistor R508 is connected with the cathode of the zener diode V504, and the anode of the zener diode V504 is connected with the other end of the resistor R509 in parallel and then connected with the base electrode of the triode V505;
the collector electrode of the triode V505 is connected with one end of a resistor R510;
the 5 feet, the 6 feet, the 7 feet and the 8 feet of the control chip U5 are connected with each other and then connected with the signal output end of the gate driving device;
the other end of the resistor R510 is connected with the positive pole of the diode V506 in parallel and then connected with the 5 pin, the 6 pin, the 7 pin and the 8 pin of the control chip U5, the negative pole of the diode V506 is connected with the other end of the resistor R507 in parallel, and one end of the capacitor C507 is connected with one end of the capacitor C508;
and separating the gate drive plate from the insulated gate bipolar transistor IGBT, adding a drive protection plate, enabling the gate drive plate to be far away from the heating source IGBT, installing the gate drive plate main body at a position close to an air outlet of the cooling fan, and arranging the separated IGBT on the gate protection plate.
2. The wind farm frequency converter power unit based on a split insulated gate bipolar IGBT drive structure of claim 1, wherein: and a level NAND gate module is further arranged between the isolation level converter (4) and the driver (5), and the model of the level NAND gate module is 74H02.
3. The wind farm frequency converter power unit based on a split insulated gate bipolar IGBT driving structure of claim 2, wherein: the chips used in the power supply module (7) are voltage regulators U6 and U7, the model of the voltage regulator U6 is 78M09, and the model of the voltage regulator U7 is 78L05; the circuit structure of the power supply module (7) is as follows:
the 1 pin of the voltage stabilizer U6 is connected with one end of a capacitor C509 in parallel, and one end of a capacitor C510 is connected with the output end of the VCC power supply;
the 2 pin of the voltage stabilizer U6 is connected with one end of a capacitor C511 in parallel, one end of the capacitor C512 and the positive electrode of a diode V508 are grounded;
the 3 pin of the voltage stabilizer U6 is connected with one end of a resistor R515, the other end of the resistor R515 is connected with the other end of a capacitor C509 in parallel, the other end of the capacitor C511, the other end of the capacitor C510 and the other end of the capacitor C512 are connected with the output end of a COM power supply after the negative electrode of a diode V508;
the 1 pin of the voltage stabilizer U7 is connected with one end of a capacitor C515 in parallel and then connected with the 5V power supply output end;
the 2 feet of the voltage stabilizer U7 are connected with the 3 feet, the 6 feet and the 7 feet of the voltage stabilizer U7 in parallel, the other end of the capacitor C515 is grounded after one end of the capacitor C516 is grounded;
the 8 pin of the voltage stabilizer U7 is connected with the other end of the capacitor C516 in parallel and then connected with the input end of the VCC power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910517170.XA CN110086330B (en) | 2019-06-14 | 2019-06-14 | Wind power plant frequency converter power unit based on separated insulated gate bipolar IGBT driving structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910517170.XA CN110086330B (en) | 2019-06-14 | 2019-06-14 | Wind power plant frequency converter power unit based on separated insulated gate bipolar IGBT driving structure |
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| Publication Number | Publication Date |
|---|---|
| CN110086330A CN110086330A (en) | 2019-08-02 |
| CN110086330B true CN110086330B (en) | 2024-02-09 |
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|---|---|---|---|
| CN201910517170.XA Active CN110086330B (en) | 2019-06-14 | 2019-06-14 | Wind power plant frequency converter power unit based on separated insulated gate bipolar IGBT driving structure |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000060439A (en) * | 1999-03-16 | 2000-10-16 | 차동해 | Device for driving high voltage igbt |
| CN1354561A (en) * | 2001-12-10 | 2002-06-19 | 深圳安圣电气有限公司 | Insulated gate bipolar transistor IGBT drive protection circuit |
| CN202276325U (en) * | 2011-10-08 | 2012-06-13 | 崔建勋 | Large power high voltage pulse power supply drive circuit |
| WO2017008441A1 (en) * | 2015-07-15 | 2017-01-19 | 京东方科技集团股份有限公司 | Insulated gate bipolar transistor (igbt) drive circuit |
| CN206180838U (en) * | 2016-09-27 | 2017-05-17 | 北京动力源科技股份有限公司 | Insulated gate bipolar transistor detects protection circuit and high -voltage inverter |
| CN209881645U (en) * | 2019-06-14 | 2019-12-31 | 山西恒信风光新能源技术有限公司 | Frequency converter power unit based on separated insulated gate bipolar IGBT driving structure |
-
2019
- 2019-06-14 CN CN201910517170.XA patent/CN110086330B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000060439A (en) * | 1999-03-16 | 2000-10-16 | 차동해 | Device for driving high voltage igbt |
| CN1354561A (en) * | 2001-12-10 | 2002-06-19 | 深圳安圣电气有限公司 | Insulated gate bipolar transistor IGBT drive protection circuit |
| CN202276325U (en) * | 2011-10-08 | 2012-06-13 | 崔建勋 | Large power high voltage pulse power supply drive circuit |
| WO2017008441A1 (en) * | 2015-07-15 | 2017-01-19 | 京东方科技集团股份有限公司 | Insulated gate bipolar transistor (igbt) drive circuit |
| CN206180838U (en) * | 2016-09-27 | 2017-05-17 | 北京动力源科技股份有限公司 | Insulated gate bipolar transistor detects protection circuit and high -voltage inverter |
| CN209881645U (en) * | 2019-06-14 | 2019-12-31 | 山西恒信风光新能源技术有限公司 | Frequency converter power unit based on separated insulated gate bipolar IGBT driving structure |
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| CN110086330A (en) | 2019-08-02 |
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