CN209823661U - High repetition frequency nanosecond high-voltage pulse power supply - Google Patents

High repetition frequency nanosecond high-voltage pulse power supply Download PDF

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CN209823661U
CN209823661U CN201920371970.0U CN201920371970U CN209823661U CN 209823661 U CN209823661 U CN 209823661U CN 201920371970 U CN201920371970 U CN 201920371970U CN 209823661 U CN209823661 U CN 209823661U
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pulse
power supply
nanosecond
circuit
voltage
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陈鹏
施小东
祝建军
郑立成
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Zhejiang Doway Advanced Technology Co Ltd
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Zhejiang Doway Advanced Technology Co Ltd
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Abstract

The utility model discloses a high repetition frequency nanosecond level high voltage pulse power supply, power are used for preparing super high concentration ozone water, its characterized in that: the high repetition frequency nanosecond high-voltage pulse power supply comprises: the SVPWM rectifier is connected with the alternating current and converts the alternating current into the direct current; the voltage reduction circuit is connected with the output end of the SVPWM rectifier and is used for carrying out voltage reduction treatment on the direct current; and the nanosecond pulse generating circuit is connected with the output end of the voltage reducing circuit through the magnetic ring and is used for generating pulse voltage to the load end. The utility model discloses the beneficial effect who reaches: the scheme omits a pulse compression magnetic switch, and the pulse repetition frequency is greatly improved; the automatic recovery of the residual reactive energy in the reactor is realized, and the electric energy required by the ozone generation of unit weight is greatly reduced.

Description

High repetition frequency nanosecond high-voltage pulse power supply
Technical Field
The utility model relates to a high repetition frequency nanosecond high-voltage pulse power supply, concretely relates to high repetition frequency nanosecond high-voltage pulse power supply who is used for super high concentration ozone water preparation.
Background
The ozone water has very high oxidation potential (2.07V), is second to fluorine, is much higher than chlorine (1.36V) and chlorine dioxide (1.5V), and has very strong sterilization and disinfection effects on various highly pathogenic microorganisms. The sterilization speed of the high-concentration ozone water is 600-3000 times faster than that of chlorine, and viruses can be killed within even a few minutes. The high-concentration ozone water can also oxidize and decompose pollutants and impurities in water, and is widely applied to the field of environmental protection engineering such as sewage treatment and the like.
The ultra-high concentration ozone water has wider application prospect in the semiconductor high-end fields of wafer and polysilicon cleaning and the like. At present, manufacturers of semiconductor equipment such as Japan, America, Germany, etc. have developed ozone water generators that meet the requirements of semiconductor cleaning applications. Also, the preparation of ultra-high concentration ozone water has attracted domestic attention.
The preparation of the ultra-high concentration ozone water has the main problems that: the energy consumption is high, the economical efficiency is poor, and the further popularization and application are not facilitated; cooling equipment is needed, the equipment volume is large, and the use is inconvenient; the ozone concentration is not high, the ozone generation rate is not fast enough, and the preparation requirement of the ultra-high concentration ozone water cannot be met. The modularized series connection scheme provided by the patent successfully solves the technical problem of the traditional ozone generator, and is expected to have wide market application.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems, the present invention provides a high repetition frequency (HPRF) nanosecond high voltage pulse power supply, which is used for preparing ultra-high concentration ozone water, and is characterized in that:
the high repetition frequency nanosecond high-voltage pulse power supply comprises:
the SVPWM rectifier is connected with the alternating current and converts the alternating current into the direct current;
the voltage reduction circuit is connected with the output end of the SVPWM rectifier and is used for carrying out voltage reduction treatment on the direct current;
and the nanosecond pulse generating circuit is connected with the output end of the voltage reducing circuit through the magnetic ring and is used for generating pulse voltage to the load end.
Further, the SVPWM rectifier adopts a two-level PWM rectifying circuit or a three-level PWM rectifying circuit or a Vienna rectifier circuit.
Further, the nanosecond pulse generating circuit includes:
the input end of the single-phase full-bridge inverter circuit is connected with the output end of the voltage reduction circuit;
the input end of the diode rectifier penetrates through the magnetic ring to be connected with the output end of the single-phase full-bridge inverter circuit; the output end of the diode rectifier is connected with a storage capacitor;
the pulse capacitor is connected with the storage capacitor in parallel, and the output end of the pulse capacitor is connected with a load;
the module that diode rectifier and pulse capacitor constitute is provided with at least one group, and the group is parallelly connected each other between the group.
Furthermore, a bypass switch is connected in parallel between the output end of the pulse capacitor and the load;
an insulated gate bipolar transistor is connected in series between the bypass switch and the pulse capacitor;
when the insulated gate bipolar transistor is conducted, a high-voltage pulse is input to the load end.
Furthermore, the bypass switch adopts a bypass diode or a mechanical switch; the conduction direction of the bypass diode is consistent with the conduction direction of the insulated gate bipolar transistor.
Further, the pulse capacitor includes:
a resistor, a trigger diode and a capacitor which are sequentially connected in series to form a closed loop;
wherein, the both ends of resistance and diode rectifier are parallelly connected.
Further, a diode in the trigger diode is a freewheeling diode.
Furthermore, the utility model also provides a unipolar pulse power supply based on high repetition frequency nanosecond level high-voltage pulse power supply, its characterized in that:
in the unipolar pulse power supply:
each group of modules in the nanosecond pulse generation circuit comprises two groups of diode rectifiers and pulse capacitors;
the two groups of diode rectifiers are connected on the magnetic ring in parallel; the output negative electrode of one group of pulse capacitors is connected with the output positive electrode of the other group of pulse capacitors;
the two insulated gate bipolar transistors and the bypass switch are in the same conduction direction.
Furthermore, the utility model also provides a bipolar pulse power supply based on high repetition frequency nanosecond high-voltage pulse power supply, its characterized in that:
in the bipolar pulse power supply, the power supply is provided with a power supply circuit,
each group of modules in the nanosecond pulse generation circuit comprises a diode rectifier and a pulse capacitor;
the nanosecond pulse generating circuit also comprises an output circuit connected with the load input end;
the output circuit comprises two groups of insulated gate bipolar transistor components and a bypass switch which are sequentially connected in parallel;
each group of insulated gate bipolar transistor components comprises two insulated gate bipolar transistors which are connected in series, and the two insulated gate bipolar transistors which are connected in series are connected with one end of a capacitor in the pulse capacitor.
Further, the bypass switch is a mechanical switch.
The utility model discloses the beneficial effect who reaches: the scheme omits a pulse compression magnetic switch, and the pulse repetition frequency is greatly improved; the automatic recovery of the residual reactive energy in the reactor is realized, and the electric energy required by the ozone generation of unit weight is greatly reduced.
Drawings
FIG. 1 is a circuit topology diagram of the present power supply;
FIG. 2 is a schematic diagram of a partial circuit configuration of the nanosecond pulse generator circuit of FIG. 1;
FIG. 3 is a schematic diagram of a partial structure of a nanosecond pulse generator circuit of the unipolar pulse power supply;
FIG. 4 is a schematic diagram of a partial structure of a nanosecond pulse generating circuit of a bipolar pulse power supply;
FIG. 5 is a schematic of a voltage waveform of a positive pulse;
FIG. 6 is a schematic of the voltage waveform of a negative pulse;
fig. 7 is a schematic diagram of a voltage waveform with alternating positive and negative pulses.
Detailed Description
The present invention will be further described with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The traditional ozone water preparation adopts high-frequency alternating current sinusoidal voltage. Typically, the pulse width of the ac power source is about 100 us. Because the pulse width is wider, the critical electric field intensity of the reactor is smaller, the active current injected into the reactor is smaller (only the active current component is generated near the peak voltage), and a large part of current is converted into the capacitive displacement current of the reactor. Because the displacement current is large, the heat productivity of the reactor is large, and a water cooling device with a large volume is needed. The water cooling equipment not only increases the manufacturing cost, but also causes a great deal of energy loss.
To increase the critical electric field, a pulse transformer + magnetic compression design is proposed. The working process is as follows: firstly, an electronic switch such as an IGBT generates a pulse of tens of microseconds; then, the pulse width is compressed to nanosecond level by 1-or 2-level magnetic switching. This power supply scheme successfully achieves narrow pulse output, however, the more serious problems that result from this: because the magnetic switch has larger heat productivity, the pulse repetition frequency is only hundreds of hertz; because the magnetic switch is in a one-way conduction characteristic, the residual reactive energy of the load cannot freely return to the input power supply side, and can only be consumed through the discharge resistor (about 15%), and the energy consumption is increased. This solution is not suitable for ozonated water production.
The utility model discloses a circuit technology, pulse power supply can realize that repetition frequency is 10kHz (unipolar) or 20kHz (bipolar), pulse rise time is 100ns and the output voltage peak value is 50 kV's performance index. Compare with traditional high frequency alternating current power supply, the pulse power supply's that this patent provided main advantage is: the rise time is greatly reduced, the maximum breakdown field intensity is obviously improved, and the conversion efficiency from electric energy to chemical energy is greatly improved; the capacitive reactive current is reduced, the heat productivity of the reactor is reduced, and a water cooling device is not needed.
Compare with traditional magnetic compression nanosecond pulse power supply, the pulse power supply that this patent provided's main advantage is: a pulse compression magnetic switch is omitted, and the pulse repetition frequency is greatly improved; the automatic recovery of the residual reactive energy in the reactor is realized, and the electric energy required by the ozone generation of unit weight is greatly reduced. This power supply is very suitable for producing large-scale high concentration ozone water.
The circuit topological diagram of the technical scheme is shown in fig. 1, and the high repetition frequency nanosecond high-voltage pulse power supply comprises three blocks, namely an SVPWM rectifier, a voltage reduction circuit and a nanosecond pulse generation circuit.
In this embodiment, the SVPWM rectifier adopts a high power factor rectifier, which is used to improve the power factor of the power grid side, and specifically adopts a two-level PWM rectification circuit or a three-level PWM rectification circuit or a vienna rectifier circuit. Wherein the SVPWM rectifier is grounded through a capacitor Cd1 to improve safety. In this embodiment, a diode rectifier and a pulse capacitor in a nanosecond pulse generation circuit are denoted as a module SM, and in the embodiment, 50 groups of SM modules are used and connected in parallel in the circuit, and are distinguished by the following scalar numbers.
The Buck circuit is a Buck Buck circuit and is used for realizing full-range automatic adjustment of direct-current voltage.
As a specific aspect, the nanosecond pulse generating circuit includes:
the input end of the single-phase full-bridge inverter circuit is connected with the output end of the voltage reduction circuit;
the input end of the diode rectifier penetrates through the magnetic ring to be connected with the output end of the single-phase full-bridge inverter circuit; the output of the diode rectifier is connected to a storage capacitor Cm 1.
And the pulse capacitor is connected with the storage capacitor Cm1 in parallel, and the output end of the pulse capacitor is connected with a load. In addition, a bypass switch MS is connected in parallel between the output end of the pulse capacitor and the load. An insulated gate bipolar transistor S1 is connected in series between the bypass switch and the pulse capacitor. When the insulated gate bipolar transistor is conducted, a high-voltage pulse is input to the load end. The pulse capacitor comprises a resistor Rk1, a trigger diode and a capacitor Ck1 which are sequentially connected in series to form a closed loop; wherein, the both ends of resistance and diode rectifier are parallelly connected. The diode in the trigger diode is a freewheeling diode, and as shown in the figure, the diode connected in parallel with the impedance Lt1 is D1, which is a freewheeling diode, so that the oscillation of the dc voltage of the capacitor Cm1 can be effectively avoided.
The MS connected with the load in parallel is a bypass diode or a mechanical switch, and under the condition of single module failure, all load current flows through the MS, so that the SM module can be bypassed, and the continuous operation of other circuit modules is not influenced, and the operation reliability is improved. The conduction direction of the bypass diode is consistent with the conduction direction of the insulated gate bipolar transistor.
By further improving the circuit, the output voltage of unipolar pulses and the output voltage of bipolar pulses can be formed, the unipolar pulses can output nanosecond-level pulse voltages with positive polarities, and the bipolar pulses can output nanosecond-level high-voltage pulses with positive or negative polarities.
As a specific embodiment, a nanosecond pulse generating circuit in the unipolar pulse power supply comprises two groups of diode rectifiers and pulse capacitors;
the two groups of diode rectifiers are connected in parallel on a magnetic ring T1; the output negative electrode of one group of pulse capacitors is connected with the output positive electrode of the other group of pulse capacitors;
the two insulated gate bipolar transistors and the bypass switch are in the same conduction direction. The direction of the diodes in the whole circuit is shown in the figure, and a conductive circuit can be formed.
As another specific embodiment, a nanosecond pulse generating circuit in the bipolar pulse power supply comprises a group of diode rectifiers and pulse capacitors;
the nanosecond pulse generating circuit also comprises an output circuit connected with the load input end;
the output circuit comprises two groups of insulated gate bipolar transistor components and a bypass switch which are sequentially connected in parallel;
each group of the insulated gate bipolar transistor assemblies comprises two insulated gate bipolar transistors which are connected in series, namely S1-S4, and the two insulated gate bipolar transistors which are connected in series are connected with one end of a capacitor in the pulse capacitor.
Taking a unipolar pulse circuit as an example, the working process of the pulse power supply is as follows:
1) generating 700V stable direct current voltage by an SVPWM rectifier;
2) the Buck circuit adjusts the direct-current voltage to a proper power supply voltage (500V is taken as an example in the embodiment);
3) generating square wave voltage with positive and negative polarities of 8kHz through a single-phase full-bridge inverter circuit;
4) the square wave voltage is coupled to an input AC input of the diode rectifier through a magnetic ring T1;
5) the diode rectifier bridge outputs a dc voltage across the storage capacitor Cm 1;
6) the pulse capacitor Ck1 is charged by Lt 1;
7) the IGBT switch S1 is conducted, high-voltage pulse with the rising edge of 200ns is obtained at the load end pulse output end, and the high-voltage pulse is sent to the ozone generator reactor (namely the load).
The single polarity pulse circuit shown in fig. 2 implements a single module 2kV voltage conversion.
Two 1kV circuit units are arranged in the same box body by adopting a neutral point clamping circuit. Not only can reduce the drive plate cost (the drive plate or the drive core of the IGBT of 1700V grade is in half-bridge design and can output 2-path signals), but also can reduce the volume and reduce the cost through the integrated design of the drive plate and the IGBT.
As a specific example, the positive and negative polarity pulse output control pattern is shown in fig. 5 to 7, wherein the abscissa represents time, the ordinate represents pulse voltage value, the positive pulse corresponds to the upper area of the abscissa, the negative pulse corresponds to the lower area of the abscissa, and the durations of the positive pulse and the negative pulse are arbitrarily programmable.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be considered as the protection scope of the present invention.

Claims (10)

1. A high repetition frequency nanosecond high-voltage pulse power supply is used for preparing ultrahigh concentration ozone water, and is characterized in that:
the high repetition frequency nanosecond high voltage pulse power supply comprises:
the SVPWM rectifier is connected with the alternating current and converts the alternating current into the direct current;
the voltage reduction circuit is connected with the output end of the SVPWM rectifier and is used for carrying out voltage reduction treatment on the direct current;
and the nanosecond pulse generating circuit is connected with the output end of the voltage reducing circuit through the magnetic ring and is used for generating pulse voltage to the load end.
2. The high repetition rate nanosecond high voltage pulsed power supply according to claim 1, characterized in that:
the SVPWM rectifier adopts a two-level PWM rectifying circuit or a three-level PWM rectifying circuit or a Vienna rectifier circuit.
3. The high repetition rate nanosecond high voltage pulsed power supply according to claim 1, characterized in that:
the nanosecond pulse generating circuit includes:
the input end of the single-phase full-bridge inverter circuit is connected with the output end of the voltage reduction circuit;
the input end of the diode rectifier penetrates through the magnetic ring to be connected with the output end of the single-phase full-bridge inverter circuit; the output end of the diode rectifier is connected with a storage capacitor;
the pulse capacitor is connected with the storage capacitor in parallel, and the output end of the pulse capacitor is connected with a load;
the module that diode rectifier and pulse capacitor constitute is provided with at least one group, and the group is parallelly connected each other between the group.
4. The high repetition rate nanosecond high voltage pulsed power supply of claim 3, wherein:
a bypass switch is connected in parallel between the output end of the pulse capacitor and the load;
an insulated gate bipolar transistor is connected in series between the bypass switch and the pulse capacitor;
and when the insulated gate bipolar transistor is conducted, high-voltage pulse is input to the load end.
5. The high repetition rate nanosecond high voltage pulsed power supply of claim 4, wherein:
the bypass switch adopts a bypass diode or a mechanical switch; and the conduction direction of the bypass diode is consistent with the conduction direction of the insulated gate bipolar transistor.
6. The high repetition rate nanosecond high voltage pulsed power supply of claim 4, wherein:
the pulse capacitor includes:
a resistor, a trigger diode and a capacitor which are sequentially connected in series to form a closed loop;
and two ends of the resistor are connected with the diode rectifier in parallel.
7. The high repetition rate nanosecond high voltage pulsed power supply of claim 6, wherein:
and a diode in the trigger diode adopts a freewheeling diode.
8. A unipolar pulse power supply based on the high repetition frequency nanosecond high voltage pulse power supply according to any one of claims 1-7, characterized in that:
in the unipolar pulse power supply:
each group of modules in the nanosecond pulse generation circuit comprises two groups of diode rectifiers and pulse capacitors;
the two groups of diode rectifiers are connected on the magnetic ring in parallel; the output negative electrode of one group of pulse capacitors is connected with the output positive electrode of the other group of pulse capacitors;
and the conduction directions of the two insulated gate bipolar transistors and the bypass switch are consistent.
9. A bipolar pulse power supply based on the high repetition frequency nanosecond high voltage pulse power supply according to any one of claims 1-7, characterized in that:
in the bipolar pulse power supply, the power supply is provided with a power supply circuit,
each group of modules in the nanosecond pulse generation circuit comprises a diode rectifier and a pulse capacitor;
the nanosecond pulse generating circuit further comprises an output circuit connected with the load input end;
the output circuit comprises two groups of insulated gate bipolar transistor components and a bypass switch which are sequentially connected in parallel;
each group of the insulated gate bipolar transistor assemblies comprises two insulated gate bipolar transistors which are connected in series, and the two insulated gate bipolar transistors which are connected in series are connected with one end of a capacitor in the pulse capacitor.
10. The bipolar pulse power supply based on high repetition frequency nanosecond high voltage pulse power supply of claim 9, wherein: the bypass switch is a mechanical switch.
CN201920371970.0U 2019-03-22 2019-03-22 High repetition frequency nanosecond high-voltage pulse power supply Active CN209823661U (en)

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Application Number Priority Date Filing Date Title
CN201920371970.0U CN209823661U (en) 2019-03-22 2019-03-22 High repetition frequency nanosecond high-voltage pulse power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920371970.0U CN209823661U (en) 2019-03-22 2019-03-22 High repetition frequency nanosecond high-voltage pulse power supply

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PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Nanosecond high voltage pulse power supply with high repetition rate

Effective date of registration: 20210428

Granted publication date: 20191220

Pledgee: Industrial and Commercial Bank of China Limited Jinhua Jindong sub branch

Pledgor: ZHEJIANG DOWAY ADVANCED TECHNOLOGY Co.,Ltd.

Registration number: Y2021330000354