CN209709679U - A kind of superhigh voltage DC circuit surge current suppressor - Google Patents
A kind of superhigh voltage DC circuit surge current suppressor Download PDFInfo
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- CN209709679U CN209709679U CN201920749431.6U CN201920749431U CN209709679U CN 209709679 U CN209709679 U CN 209709679U CN 201920749431 U CN201920749431 U CN 201920749431U CN 209709679 U CN209709679 U CN 209709679U
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Abstract
The utility model discloses a kind of hvdc circuit Inrush current restraining device, and for the Inrush current restraining in hvdc circuit, it includes a metal-oxide-semiconductor V1, a resistance R1 and a capacitor C1;The source electrode of metal-oxide-semiconductor V1 is connect with negative voltage input terminal, and the drain electrode of metal-oxide-semiconductor V1 is connect with negative voltage output end, is connect after the gate series resistance R1 of metal-oxide-semiconductor with positive voltage input terminal;The one end capacitor C1 is connect with the grid of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;The UGS voltage rate of rise that the metal-oxide-semiconductor V1 is adjusted by the resistance R1 and the capacitor C1, extends the rise time of UGS, to postpone the unlatching of the metal-oxide-semiconductor V1.The UGS voltage rate of rise that N-channel MOS pipe V1 is adjusted by resistor R1 and capacitor C1, extends the rise time of UGS, to postpone the unlatching of metal-oxide-semiconductor;The inhibition amplitude of surge current can be adjusted by the adjusting of resistor R4 resistance value, can be realized does not influence solve the problems, such as Inrush current restraining while electromagnetic interface filter Electro Magnetic Compatibility.
Description
Technical field
The utility model relates to hvdc circuit technical field more particularly to a kind of superhigh voltage DC circuit surge electric currents
Suppressor.
Background technique
Due to the presence of line capacitance device, energization momentary capacitance device is equivalent to short circuit, and product has higher wave in circuit
Gush electric current.Airborne high pressure leads to hvdc circuit on startup due to the presence of high capacitance filter condenser for 270V direct current
Surge current be nearly 10 times or so of common 28V DC circuit surge current.Use the conventional side for installing resistor current limiting additional
Method just needs high value, powerful resistor, but causes larger pressure drop and power consumption, has been unsatisfactory for actual use demand.
Utility model content
The shortcomings that the purpose of the utility model is to overcome the prior arts provides a kind of superhigh voltage DC circuit surge electric current
Suppressor solves deficiency existing for the existing conventional method for installing resistor current limiting additional.
The purpose of this utility model is achieved through the following technical solutions: a kind of hvdc circuit Inrush current restraining
Device, for the Inrush current restraining in hvdc circuit, it includes a metal-oxide-semiconductor V1, a resistance R1 and a capacitor C1;The MOS
The source electrode of pipe V1 is connect with negative voltage input terminal, and the drain electrode of the metal-oxide-semiconductor V1 is connect with negative voltage output end, the metal-oxide-semiconductor
It is connect after resistance R1 described in gate series with positive voltage input terminal;The one end the capacitor C1 is connect with the grid of the metal-oxide-semiconductor V1,
The other end is connect with the source electrode of the metal-oxide-semiconductor V1;The UGS of the metal-oxide-semiconductor V1 is adjusted by the resistance R1 and the capacitor C1
The voltage rate of rise, extends the rise time of UGS, to postpone the unlatching of the metal-oxide-semiconductor V1.
It further, further include a resistance R4, one end of the resistance R4 is connect with the drain electrode of the metal-oxide-semiconductor V1, another
End is connect with the source electrode of the metal-oxide-semiconductor V1;The inhibition amplitude of surge current is adjusted by adjusting the resistance value of resistance R4.
It further, further include a diode D1, the diode D1 is connected to the resistance R1 and the positive voltage is defeated
Enter between end.
It further, further include a resistance R2, a diode D2 and resistance R3;The resistance R2's and diode D2
One end is connect with the grid of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;One end of the resistance R3 with
The grid of the metal-oxide-semiconductor V1 connects, and the other end is connect with positive voltage output end.
Further, the metal-oxide-semiconductor V1 is N-channel MOS pipe;The capacitor C1 is charging capacitor.
Further, the diode D1 is fast recovery diode, and the diode D2 is zener diode, the resistance
R1, the resistance R3 and the resistance R4 are current-limiting resistance, and the resistance R2 is divider resistance.
The utility model has the advantage that a kind of superhigh voltage DC circuit surge current suppressor, passes through resistor R1
With the UGS voltage rate of rise of capacitor C1 adjustment N-channel MOS pipe V1, extend the rise time of UGS, to postpone metal-oxide-semiconductor
It opens;The inhibition amplitude of surge current can be adjusted by the adjusting of resistor R4 resistance value, can be realized does not influence electromagnetic interface filter
Solves the problems, such as Inrush current restraining while Electro Magnetic Compatibility.
Detailed description of the invention
Fig. 1 is the circuit diagram of the utility model.
Specific embodiment
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term " and or " used herein packet
Include any and all combinations of one or more related listed items.
The utility model is further described with reference to the accompanying drawing, but the protection scope of the utility model is not limited to
It is as described below.
As shown in Figure 1, a kind of hvdc circuit Inrush current restraining device, for the surge current in hvdc circuit
Inhibiting it includes a metal-oxide-semiconductor V1, a resistance R1 and a capacitor C1;The source electrode of the metal-oxide-semiconductor V1 is connect with negative voltage input terminal, institute
The drain electrode for stating metal-oxide-semiconductor V1 is connect with negative voltage output end, is inputted after resistance R1 described in the gate series of the metal-oxide-semiconductor with positive voltage
End connection;The one end the capacitor C1 is connect with the grid of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;It is logical
The UGS voltage rate of rise that the resistance R1 and capacitor C1 adjusts the metal-oxide-semiconductor V1 is crossed, the rise time of UGS is extended, from
And postpone the unlatching of the metal-oxide-semiconductor V1.
It further, further include a resistance R4, one end of the resistance R4 is connect with the drain electrode of the metal-oxide-semiconductor V1, another
End is connect with the source electrode of the metal-oxide-semiconductor V1;The inhibition amplitude of surge current is adjusted by adjusting the resistance value of resistance R4.
It further, further include a diode D1, the diode D1 is connected to the resistance R1 and the positive voltage is defeated
Enter between end.
It further, further include a resistance R2, a diode D2 and resistance R3;The resistance R2's and diode D2
One end is connect with the grid of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;One end of the resistance R3 with
The grid of the metal-oxide-semiconductor V1 connects, and the other end is connect with positive voltage output end.
Further, the metal-oxide-semiconductor V1 is N-channel MOS pipe;The capacitor C1 is charging capacitor.
Further, the diode D1 is fast recovery diode, and the diode D2 is zener diode, the resistance
R1, the resistance R3 and the resistance R4 are current-limiting resistance, and the resistance R2 is divider resistance.
The working process of the utility model is as follows: V1 is N- channel MOS tube, and D1 is fast recovery diode, and D2 is two pole of pressure stabilizing
Pipe, R1, R3, R4 are current-limiting resistor, and R2 is voltage grading resistor, and C1 is charging capacitor.Entire circuit by resistor R1 and
Capacitor C1 adjusts the UGS voltage rate of rise of N-channel MOS pipe V1, extends the rise time of UGS, to postpone opening for metal-oxide-semiconductor
It opens.Before UGS reaches cut-in voltage, metal-oxide-semiconductor is in high-impedance state, and entire 270V current loop first passes through current-limiting resistor R4 to rear
Filter condenser C1 charging in grade circuit, capacitor is considered as short circuit when charging, and line impedance is about 0, then surge current I=
50 Ω of 270V ÷=5.4A, surge current are effectively suppressed, and surge electricity can be adjusted by the adjusting of resistor R4 resistance value
The inhibition amplitude of stream.For D2 for protecting metal-oxide-semiconductor not to be broken down by high-voltage, R2 is used to provide a repid discharge channel for C1, D1 with
R1 is used to guarantee that metal-oxide-semiconductor remains off when just powering on, and the self-oscillation of metal-oxide-semiconductor is prevented with R3 composition circuit.
The above is only the preferred embodiment of the utility model, it should be understood that the utility model is not limited to herein
Disclosed form, should not be regarded as an exclusion of other examples, and can be used for other combinations, modifications, and environments, and
Can be in contemplated scope described herein, modifications can be made through the above teachings or related fields of technology or knowledge.And this field
The modifications and changes that personnel are carried out do not depart from the spirit and scope of the utility model, then all should be in right appended by the utility model
It is required that protection scope in.
Claims (6)
1. a kind of hvdc circuit Inrush current restraining device, for the Inrush current restraining in hvdc circuit;Its feature
Be: it includes a metal-oxide-semiconductor V1, a resistance R1 and a capacitor C1;The source electrode of the metal-oxide-semiconductor V1 is connect with negative voltage input terminal,
The drain electrode of the metal-oxide-semiconductor V1 is connect with negative voltage output end, defeated with positive voltage after resistance R1 described in the gate series of the metal-oxide-semiconductor
Enter end connection;The one end the capacitor C1 is connect with the grid of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;
The UGS voltage rate of rise that the metal-oxide-semiconductor V1 is adjusted by the resistance R1 and the capacitor C1, extends the rise time of UGS,
To postpone the unlatching of the metal-oxide-semiconductor V1.
2. a kind of hvdc circuit Inrush current restraining device according to claim 1, it is characterised in that: further include an electricity
R4 is hindered, one end of the resistance R4 is connect with the drain electrode of the metal-oxide-semiconductor V1, and the other end is connect with the source electrode of the metal-oxide-semiconductor V1;It is logical
The resistance value of resistance R4 is overregulated to adjust the inhibition amplitude of surge current.
3. a kind of hvdc circuit Inrush current restraining device according to claim 1, it is characterised in that: further include one or two
Pole pipe D1, the diode D1 are connected between the resistance R1 and the positive voltage input terminal.
4. a kind of hvdc circuit Inrush current restraining device according to claim 1, it is characterised in that: further include an electricity
Hinder R2, a diode D2 and resistance R3;The grid of one end of the resistance R2 and the diode D2 and the metal-oxide-semiconductor V1 connect
It connects, the other end is connect with the source electrode of the metal-oxide-semiconductor V1;One end of the resistance R3 is connect with the grid of the metal-oxide-semiconductor V1, another
End is connect with positive voltage output end.
5. a kind of hvdc circuit Inrush current restraining device, feature described in any one of -4 exist according to claim 1
In: the metal-oxide-semiconductor V1 is N-channel MOS pipe;The capacitor C1 is charging capacitor.
6. a kind of hvdc circuit Inrush current restraining device according to claim 4, it is characterised in that: the diode
D1 is fast recovery diode, and the diode D2 is zener diode, and the resistance R1, the resistance R3 and the resistance R4 are
Current-limiting resistance, the resistance R2 are divider resistance.
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CN201920749431.6U CN209709679U (en) | 2019-05-23 | 2019-05-23 | A kind of superhigh voltage DC circuit surge current suppressor |
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CN201920749431.6U CN209709679U (en) | 2019-05-23 | 2019-05-23 | A kind of superhigh voltage DC circuit surge current suppressor |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113922714A (en) * | 2021-10-14 | 2022-01-11 | 中国电子科技集团公司第四十三研究所 | Direct current motor start control circuit |
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2019
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113922714A (en) * | 2021-10-14 | 2022-01-11 | 中国电子科技集团公司第四十三研究所 | Direct current motor start control circuit |
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