CN110365200A - Circuit structure and PV air-conditioner system - Google Patents
Circuit structure and PV air-conditioner system Download PDFInfo
- Publication number
- CN110365200A CN110365200A CN201910667951.7A CN201910667951A CN110365200A CN 110365200 A CN110365200 A CN 110365200A CN 201910667951 A CN201910667951 A CN 201910667951A CN 110365200 A CN110365200 A CN 110365200A
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- semiconductor
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- circuit structure
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
This application provides a kind of circuit structure and PV air-conditioner systems.The circuit structure includes positive electrode bus, negative electrode bus, capacitor, metal-oxide-semiconductor and second resistance.First termination anode input of positive electrode bus, the second termination anode output of positive electrode bus.First pole plate of capacitor is in parallel with positive electrode bus by first resistor with positive electrode bus, the grid of metal-oxide-semiconductor and the first pole plate of capacitor connect, the source level of metal-oxide-semiconductor and the second pole plate of capacitor connect, and second resistance is connected in parallel in the drain electrode of source level and metal-oxide-semiconductor of metal-oxide-semiconductor.The first end of negative electrode bus is connected with the drain electrode of metal-oxide-semiconductor, the second termination cathode output of negative electrode bus.It applies the technical scheme of the present invention, has achieved the effect that inhibit power-on surge current, reduced circuit loss, improve the Electro Magnetic Compatibility of circuit；And it inhibits circuit to connect the dash current of moment, reduces the impact to entire power supply, improve system reliability.
Description
Technical field
The present invention relates to circuit structure technical fields, in particular to a kind of circuit structure and PV air-conditioner system.
Background technique
Fig. 1 is electromagnetic interface filter schematic diagram, and wherein L1, L2 are differential mode inductors, and L3 is common-mode inductor, and C1, C2 are differential mode
Capacitor, C3, C4 are common mode capacitor.Due to depositing for large capacity differential mode filter condenser C1, C2 and the building-out condenser of load
, in the moment that load powers on, the building-out condenser and electric power generating composition low-resistance of C1, C2 and the load of electromagnetic interface filter output end
Anti- circuit, is opened moment, and voltage change ratio is excessive, there are biggish dash current, when load running, is easy to influence same power supply
The work of other loads is also easy damage power supply, generates biggish power loss.
In actual use, high-voltage DC power supply is by air switch to the electromagnetic interface filter and load supplying of rear class.But
It is that air switch is connected moment, still remains very big power-on surge current in circuit, do not meet the use of some electromagnetic compatibilities
It is required that.
Summary of the invention
The embodiment of the invention provides a kind of circuit structure and PV air-conditioner systems, to solve to inhibit electric current in the prior art
Air switch existing for the circuit structure of impact connects the very big technical problem of moment power-on surge current.
The application embodiment provides a kind of circuit structure, including positive electrode bus, the first termination anode of positive electrode bus
Input, the second termination anode output of positive electrode bus；Capacitor, the first pole plate and positive electrode bus of capacitor pass through first resistor
It is in parallel with positive electrode bus；First pole plate of metal-oxide-semiconductor, the grid of metal-oxide-semiconductor and capacitor connects, the source level of metal-oxide-semiconductor and capacitor
The connection of second pole plate；Negative electrode bus, the first end of negative electrode bus are connected with the drain electrode of metal-oxide-semiconductor, and the second termination of negative electrode bus is negative
Pole output；Second resistance is connected in parallel in the drain electrode of source level and metal-oxide-semiconductor of metal-oxide-semiconductor.
In one embodiment, first resistor includes two resistance being connected in parallel, and is serially connected on one of resistance
The first pole plate of capacitor is connected to positive electrode bus in first diode, first diode individual event.
In one embodiment, two resistance and/or second resistance are current-limiting resistor and/or first diode is
Fast recovery diode.
In one embodiment, circuit structure further includes the second diode, and the second diode is connected company with second resistance
It connects, the source level of metal-oxide-semiconductor is connected to the drain electrode of metal-oxide-semiconductor in the second diode individual event.
In one embodiment, the second diode is fast recovery diode.
In one embodiment, circuit structure further includes zener diode, and zener diode is connected in parallel with capacitor,
The second pole plate of capacitor is connected to the first pole plate for stating capacitor in zener diode individual event.
In one embodiment, circuit structure further includes 3rd resistor, and 3rd resistor is connected in parallel with capacitor.
In one embodiment, 3rd resistor is voltage grading resistor.
In one embodiment, capacitor is charging capacitor and/or metal-oxide-semiconductor is N- channel MOS tube.
Present invention also provides a kind of PV air-conditioner system, including circuit structure, circuit structure is above-mentioned circuit structure.
In the above-described embodiments, entire circuit structure is risen by the UGS voltage that first resistor and capacitor adjust metal-oxide-semiconductor
Slope extends the rise time of cut-in voltage between the grid of metal-oxide-semiconductor and the source level of metal-oxide-semiconductor, in the grid and metal-oxide-semiconductor of metal-oxide-semiconductor
Source level between voltage be not up to before cut-in voltage, metal-oxide-semiconductor is not turned on, and is equivalent to open circuit, and DC power supply passes through the second electricity
It hinders and charges to the capacitor in late-class circuit.During charging, capacitor is equivalent to short circuit.When capacitor charging will satisfy
And when, voltage reaches the cut-in voltage of metal-oxide-semiconductor between the grid of metal-oxide-semiconductor and the source level of metal-oxide-semiconductor, and metal-oxide-semiconductor becomes low-resistance from high resistant,
It is equivalent to a second resistance short circuit, the electric current in entire circuit is switched to metal-oxide-semiconductor from second resistance, has reached inhibition booting surge electricity
The effect of stream.Which adds circuit structures to the inhibitory effect of dash current, reduces circuit loss, improves circuit
Electro Magnetic Compatibility；And it inhibits circuit to connect the dash current of moment, reduces the impact to entire power supply, improve and be
System reliability.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the schematic diagram according to the circuit structure in the prior art for inhibiting rush of current.
Fig. 2 is the structural schematic diagram of the embodiment of circuit structure according to the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, right below with reference to embodiment and attached drawing
The present invention is described in further details.Here, exemplary embodiment and its explanation of the invention is used to explain the present invention, but simultaneously
It is not as a limitation of the invention.
Fig. 2 shows the embodiment of circuit structure of the invention, which includes positive electrode bus 10, negative electrode bus
20, capacitor C, metal-oxide-semiconductor V and second resistance R2.First termination anode input of positive electrode bus 10, the second end of positive electrode bus 10
Connect positive output.The first pole plate of capacitor C and positive electrode bus 10 are in parallel with positive electrode bus 10 by first resistor R1, metal-oxide-semiconductor V
Grid connect with the first pole plate of capacitor C, the source level of metal-oxide-semiconductor V is connect with the second pole plate of capacitor C, second resistance R2
It is connected in parallel in the drain electrode of source level and metal-oxide-semiconductor V of metal-oxide-semiconductor V.The first end of negative electrode bus 20 is connected with the drain electrode of metal-oxide-semiconductor V,
Second termination cathode output of negative electrode bus 20.
It applies the technical scheme of the present invention, entire circuit structure adjusts metal-oxide-semiconductor V's by first resistor R1 and capacitor C
The UGS voltage rate of rise extends the rise time of cut-in voltage between the grid of metal-oxide-semiconductor V and the source level of metal-oxide-semiconductor V, in metal-oxide-semiconductor V
Grid and metal-oxide-semiconductor V source level between voltage be not up to before cut-in voltage, metal-oxide-semiconductor V is not turned on, and is equivalent to open circuit, direct current
Power supply charges to the capacitor C in late-class circuit by second resistance R2.During charging, capacitor C is equivalent to short circuit.
When capacitor C charging will be saturated, voltage reaches the unlatching electricity of metal-oxide-semiconductor V between the grid of metal-oxide-semiconductor V and the source level of metal-oxide-semiconductor V
Pressure, metal-oxide-semiconductor V become low-resistance from high resistant, are equivalent to a second resistance R2 short circuit, and the electric current in entire circuit switches from second resistance R2
To metal-oxide-semiconductor V, achieve the effect that inhibit power-on surge current.Which adds circuit structures to the inhibition effect of dash current
Fruit reduces circuit loss, improves the Electro Magnetic Compatibility of circuit；And inhibit circuit to connect the dash current of moment,
The impact to entire power supply is reduced, system reliability is improved.
It should be noted that VDC+ is anode, and VDC- is cathode in Fig. 2.
As a preferred embodiment, as shown in Fig. 2, in the technical scheme of this embodiment, first resistor R1 packet
Two resistance being connected in parallel are included, first diode D1, first diode D1 individual event electric conduction are serially connected on one of resistance
The first pole plate of container C is to positive electrode bus 10.In this way, the resistance for being serially connected with first diode D1 just constitutes anti-overcharge circuit,
It prevents the grid voltage of metal-oxide-semiconductor V excessively high, burns out metal-oxide-semiconductor V.Preferably, in the technical solution of the present embodiment, two resistance and/or
Second resistance R2 is current-limiting resistor.
As a preferred embodiment, in the technical scheme of this embodiment, circuit structure further includes the two or two pole
Pipe D2, the second diode D2 and second resistance R2 are connected in series, and the source level of metal-oxide-semiconductor V is connected to metal-oxide-semiconductor in the second diode D2 individual event
The drain electrode of V.In this way, the second diode D2 and second resistance R2 can be formed by circuit for preventing reverse connection of power supply, when DC power supply is reversed
When, the second diode D2 cannot reversely be connected, and guarantee that the electronic component in circuit structure is not damaged.Preferably, above-mentioned
First diode D1 and the second diode D2 is fast recovery diode.
As shown in Fig. 2, as a preferred embodiment, in the technical scheme of this embodiment, circuit structure also wraps
Zener diode D3 is included, zener diode D3 is connected in parallel with capacitor C, and the of capacitor C is connected in zener diode D3 individual event
Two pole plates are to the first pole plate for stating capacitor C.Zener diode D3 can be used for maintaining the grid of metal-oxide-semiconductor V and the source of metal-oxide-semiconductor V
Voltage stabilization between pole guarantees the reliability of the work of metal-oxide-semiconductor V.More preferably, circuit structure further includes 3rd resistor
R3,3rd resistor R3 are connected in parallel with capacitor C.Optionally, 3rd resistor R3 is voltage grading resistor.
It should be noted that above-mentioned capacitor C is preferably charging capacitor, above-mentioned metal-oxide-semiconductor V is preferably N- channel
Metal-oxide-semiconductor.
The present invention also provides a kind of PV air-conditioner system, which includes above-mentioned circuit structure.Using
The PV air-conditioner system of foregoing circuit structure, reduces circuit loss, more energy saving, and inhibits rush of current, and system is reliable
Property is higher.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the embodiment of the present invention can have various modifications and variations.All within the spirits and principles of the present invention, made
Any modification, equivalent substitution, improvement and etc. should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of circuit structure, which is characterized in that including
Positive electrode bus (10), the first termination anode input of the positive electrode bus (10), the second end of the positive electrode bus (10)
Connect positive output；
Capacitor (C), the first pole plate of the capacitor (C) and the positive electrode bus (10) by first resistor (R1) with it is described
Positive electrode bus (10) is in parallel；
The grid of metal-oxide-semiconductor (V), the metal-oxide-semiconductor (V) is connect with the first pole plate of the capacitor (C), the source of the metal-oxide-semiconductor (V)
Grade is connect with the second pole plate of the capacitor (C)；
The first end of negative electrode bus (20), the negative electrode bus (20) is connected with the drain electrode of the metal-oxide-semiconductor (V), and the cathode is female
Second termination cathode output of line (20)；
Second resistance (R2) is connected in parallel in the drain electrode of source level and the metal-oxide-semiconductor (V) of the metal-oxide-semiconductor (V).
2. circuit structure according to claim 1, which is characterized in that the first resistor (R1) includes two be connected in parallel
A resistance is serially connected with first diode (D1) on one of resistance, and the capacitor is connected in first diode (D1) individual event
First pole plate of device (C) is to the positive electrode bus (10).
3. circuit structure according to claim 2, which is characterized in that described two resistance and/or the second resistance
(R2) be current-limiting resistor and/or the first diode (D1) is fast recovery diode.
4. circuit structure according to claim 1, which is characterized in that the circuit structure further includes the second diode
(D2), second diode (D2) and the second resistance (R2) are connected in series, the second diode (D2) individual event conducting
Drain electrode of the source level of the metal-oxide-semiconductor (V) to the metal-oxide-semiconductor (V).
5. circuit structure according to claim 4, which is characterized in that second diode (D2) is two poles of fast recovery
Pipe.
6. circuit structure according to claim 1, which is characterized in that the circuit structure further includes zener diode
(D3), the zener diode (D3) is connected in parallel with the capacitor (C), described in zener diode (D3) the individual event conducting
Second pole plate of capacitor (C) states the first pole plate of capacitor (C) described in.
7. circuit structure according to claim 1, which is characterized in that the circuit structure further includes 3rd resistor (R3),
The 3rd resistor (R3) is connected in parallel with the capacitor (C).
8. circuit structure according to claim 7, which is characterized in that the 3rd resistor (R3) is voltage grading resistor.
9. circuit structure according to any one of claim 1 to 8, which is characterized in that the capacitor (C) is charging electricity
Container and/or the metal-oxide-semiconductor (V) are N- channel MOS tube.
10. a kind of PV air-conditioner system, including circuit structure, which is characterized in that the circuit structure is in claim 1 to 9
Described in any item circuit structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910667951.7A CN110365200A (en) | 2019-07-23 | 2019-07-23 | Circuit structure and PV air-conditioner system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910667951.7A CN110365200A (en) | 2019-07-23 | 2019-07-23 | Circuit structure and PV air-conditioner system |
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| Publication Number | Publication Date |
|---|---|
| CN110365200A true CN110365200A (en) | 2019-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910667951.7A Pending CN110365200A (en) | 2019-07-23 | 2019-07-23 | Circuit structure and PV air-conditioner system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112532030A (en) * | 2020-09-28 | 2021-03-19 | 成都军陶科技有限公司 | Surge current suppression circuit |
-
2019
- 2019-07-23 CN CN201910667951.7A patent/CN110365200A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112532030A (en) * | 2020-09-28 | 2021-03-19 | 成都军陶科技有限公司 | Surge current suppression circuit |
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