CN209592277U - A kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands - Google Patents
A kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands Download PDFInfo
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- CN209592277U CN209592277U CN201920547258.1U CN201920547258U CN209592277U CN 209592277 U CN209592277 U CN 209592277U CN 201920547258 U CN201920547258 U CN 201920547258U CN 209592277 U CN209592277 U CN 209592277U
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Abstract
The utility model discloses a kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands comprising top dielectric plate, layer dielectric plate and the blank medium plate being arranged between top dielectric plate and layer dielectric plate；Top dielectric plate upper surface is printed with the first copper clad layers, lower surface is printed with circular metal patch, circular metal patch is equipped with the first metallic vias, form Artificial magnetic conductor structure, layer dielectric plate upper surface is printed with second copper-clad layer, second copper-clad layer is equipped with 3 pairs of U-shaped gaps, second copper-clad layer both ends are separately connected the transition transition line and feeding microstrip line for realizing impedance matching, lower surface is printed with the second copper-clad layer of ground connection, the two sides of second copper-clad layer and intermediate the second metallic vias and third metallic vias for being respectively equipped with periodic arrangement, realize filter function.The utility model can effectively inhibit space radiation and plane wave, and realize high integration and miniaturization, have many advantages, such as that size is small, easy of integration and stable structure.
Description
Technical field
The utility model relates to antenna technical field, more particularly to a kind of novel with dual transfer zero and Wide stop bands
ISGW bandpass filter.
Background technique
It needs using high performance microwave and millimeter filter in the 5th generation (5G) mobile communication system to realize high biography
Defeated efficiency.Microwave wideband bandpass filter is vital component part in modern wireless communication systems, as microwave is integrated
The rapid development of circuit and the growing tension of frequency spectrum resource, whole system develop towards miniaturization, high-performance direction, this is to wireless
More stringent requirements are proposed for the performance and size of filter in communication system.Unfortunately, the filter designed by metal waveguide
Highly integrated small modules and system are no longer desirable for, because this kind of microstrip filter electromagnetism interference is weak, radiation leakage is tight
Weight, transmission loss are big, easily cause strong signal interference, reduce 5G efficiency of transmission.
Transmission TE mode substrate integration wave-guide (Substrate Integrated Waveguide, SIW) filter be
A kind of preferably integrated and miniaturization selection.In the design of SIW filter, descend on it metal covering constitute defect micro-strip with
Form the means that stopband is the design of its filter.But it will lead to the waveguide that SIW filter forms a non-close in this way
Structure cannot effectively inhibit space radiation and plane wave.SIW transmits TE10Wave needs mode to turn when integrating with microstrip line
It changes, generates mode transition loss；Using SIW Planar waveguide technology make filter when need to encapsulate, with inhibit space radiation and
Surface wave.
Utility model content
The utility model is mainly solving the technical problems that provide a kind of novel with dual transfer zero and Wide stop bands
ISGW bandpass filter can effectively inhibit space radiation and plane wave, and realize high integration and miniaturization.
In order to solve the above technical problems, the technical solution that the utility model uses is: providing a kind of with double transmission
The novel I SGW bandpass filter of zero point and Wide stop bands, including top dielectric plate (1), layer dielectric plate (3) and setting are in institute
State the blank medium plate (2) between top dielectric plate (1) and layer dielectric plate (3)；The upper surface of the top dielectric plate (1) prints
Brushed with the first copper-clad (11), the lower surface of the top dielectric plate (1) is printed with the circular metal patch of three row periodic arrangements
Piece (12), each circular metal patch (12) is equipped with the first metallic vias (13) through top dielectric plate (1), described
The orientation of circular metal patch (12) is parallel with the Y-axis in three-dimensional reference frame；The upper table of the layer dielectric plate (3)
Face be printed with the second copper-clad (31), connect the second copper-clad (31) two sides transition transition line (32) and with transition transition line
(32) both sides of the edge of the feeding microstrip line (33) connected, second copper-clad (31) are equipped with through layer dielectric plate (3)
The middle part of the second metallic vias (34) of periodic arrangement, second copper-clad (31) is equipped with through layer dielectric plate (3)
The third metallic vias (35) of periodic arrangement, the orientation of second metallic vias (34) and third metallic vias (35)
Parallel with Y-axis, second copper-clad (31) is equipped with a pair of first U-shaped gap (36), a pair of second U-shaped gap (37) and one
To the U-shaped gap of third (38), the first U-shaped gap (36), the second U-shaped gap (37) and the U-shaped gap of third (38) edge and Y-axis
Parallel direction interval setting, and the pair of first U-shaped gap (36), a pair of second U-shaped gap (37) and the 3rd U of a pair
Type gap (38) is symmetrical about the center line in the second copper-clad (31) X-direction；Under the layer dielectric plate (3)
Surface printing has third copper-clad (39)；Wherein, the width of the transition transition line (32) is connect from feeding microstrip line (33)
Side become larger to the other side.
Preferably, the U-shaped gap of the third (38), the second U-shaped gap (37), the first U-shaped gap (36) and the second deposited copper
The spacing of center line in layer (31) X-direction is sequentially increased.
Preferably, a line circular metal patch (12) of the centre is located in top dielectric plate (1) Y direction
On center line.
Preferably, the third metallic vias (35) is located on the center line in the second copper-clad (31) Y direction.
Preferably, the dielectric constant of the top dielectric plate (1) is higher than blank medium plate (2) and layer dielectric plate (3), institute
It is identical with the dielectric constant of layer dielectric plate (3) to state blank medium plate (2).
Preferably, the top dielectric plate (1) uses FR4 plate, thickness 1.6mm, the blank medium plate (2) and lower layer
Dielectric-slab (3) uses Rogers4003C plate, and thickness is respectively 0.203mm and 0.304mm.
Preferably, the top dielectric plate (1), layer dielectric plate (3) and blank medium plate (2) are bonded together or pass through
Screw is fixed together.
Preferably, the length and width of the top dielectric plate (1) is identical as the length and width of blank medium plate (2).
Preferably, the thickness of the top dielectric plate (1) is greater than the thickness of blank medium plate (2).
Preferably, the width phase of the width and top dielectric plate (1) and blank medium plate (2) of the layer dielectric plate (3)
Together, the length of the layer dielectric plate (3) is greater than the length of top dielectric plate (1) and blank medium plate (2), described to expose
Transition transition line (32) and feeding microstrip line (33).
It is in contrast to the prior art, the beneficial effects of the utility model are: being constituted by using three blocks of dielectric-slabs
ISGW wideband bandpass filter, top dielectric plate upper surface are printed with the first copper clad layers, and lower surface is printed with circular metal patch,
Circular metal patch is equipped with the first metallic vias, forms Artificial magnetic conductor structure, layer dielectric plate upper surface is printed with second
Copper clad layers, second copper-clad layer are equipped with 3 pairs of U-shaped gaps, and second copper-clad layer both ends are separately connected the transition of realization impedance matching gradually
Modified line and feeding microstrip line, lower surface are printed with the second copper-clad layer of ground connection, and the two sides and centre of second copper-clad layer are respectively equipped with
The second metallic vias and third metallic vias of periodic arrangement realize filter function, by the above-mentioned means, so as to effective
Inhibit space radiation and plane wave, and realize high integration and miniaturization, has size small, easy of integration and stable structure etc. is excellent
Point.
Detailed description of the invention
Fig. 1 is the knot of the novel I SGW bandpass filter with dual transfer zero and Wide stop bands of the utility model embodiment
Structure schematic diagram.
Fig. 2 is the top dielectric plate of the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands
Schematic top plan view.
Fig. 3 is the top dielectric plate of the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands
Elevational schematic view.
Fig. 4 is the layer dielectric plate of the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands
Schematic top plan view.
Fig. 5 is the layer dielectric plate of the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands
Elevational schematic view.
Fig. 6 is the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands in the imitative of 8-30GHz
True and test result schematic diagram.
Fig. 7 is group of the novel I SGW bandpass filter shown in FIG. 1 with dual transfer zero and Wide stop bands in passband
The emulation of delay and test result schematic diagram.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describing, it is clear that described embodiment is only a part of the embodiment of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Refering to fig. 1 to Fig. 5, the novel I SGW band logical filter with dual transfer zero and Wide stop bands of the utility model embodiment
Wave device includes that top dielectric plate 1, layer dielectric plate 3 and the interval being arranged between top dielectric plate 1 and layer dielectric plate 3 are situated between
Scutum 2.
The upper surface of top dielectric plate 1 is printed with the first copper-clad 11, and the lower surface of top dielectric plate 1 is printed with three rows week
The circular metal patch 12 of phase property arrangement, each circular metal patch 12 are equipped with the first metal mistake through top dielectric plate 1
The orientation in hole 13, circular metal patch 12 is parallel with the Y-axis in three-dimensional reference frame.As shown in Figure 1, top dielectric plate
1 upper surface is located at the XOY plane in three-dimensional reference frame.In the present embodiment, intermediate a line circular metal patch 12
On the center line in the Y direction of top dielectric plate 1.Each circular metal patch 12 with metallic vias 13 thereon together
Mushroom-shaped EBG structure is constituted, in this way, being formed the mushroom-shaped EBG structure of periodic arrangement on top dielectric plate 1.
Blank medium plate 2 makes top dielectric plate 1 and layer dielectric plate for separating top dielectric plate 1 and layer dielectric plate 3
Gap is formed between 3.Top dielectric plate 1, layer dielectric plate 3 and blank medium plate 2 can be bonded together or be consolidated by screw
It is scheduled on together.
The transition gradual change that the upper surface of layer dielectric plate 3 is printed with the second copper-clad 31, connects 31 two sides of the second copper-clad
Line 32 and the feeding microstrip line 33 being connect with transition transition line 32.The width of transition transition line 32 connects from feeding microstrip line 33
The side connect becomes larger to the other side.
The both sides of the edge of second copper-clad 31 are equipped with the second metallic vias of the periodic arrangement through layer dielectric plate 3
34, the middle part of the second copper-clad 31 is equipped with the third metallic vias 35 of the periodic arrangement through layer dielectric plate 3, the second metal
The orientation of via hole 34 and third metallic vias 35 is parallel with Y-axis.
Second copper-clad 31 is equipped with a pair of first U-shaped gap 36, a pair of second U-shaped gap 37 and the U-shaped seam of a pair of of third
Gap 38, the first U-shaped gap 36, the second U-shaped gap 37 and the U-shaped gap 38 of third are arranged along the direction interval parallel with Y-axis, and
The X-axis of a pair of first U-shaped gap 36, a pair of second U-shaped gap 37 and the U-shaped gap 38 of a pair of of third about the second copper-clad 31
Center line on direction is symmetrical.
In the present embodiment, the U-shaped gap 38 of third, the second U-shaped gap 37, the first U-shaped gap 36 and the second copper-clad 31
X-direction on the spacing of center line be sequentially increased.That is, the second U-shaped gap 37, the U-shaped gap 38 of third are located at one
To between the first U-shaped gap 36, the U-shaped gap 38 of third is located between a pair of second U-shaped gap 37.
The lower surface of layer dielectric plate 3 is printed with third copper-clad 39.Second metallic vias 34 and third metallic vias 35
Run through layer dielectric plate 3, and is separately connected the second copper-clad 31 and third copper-clad 39.
In the present embodiment, third metallic vias 35 is located on the center line in the Y direction of the second copper-clad 31.Equally
, the U-shaped gap 38 of third, the second U-shaped gap 37, the first U-shaped gap 36 geometric center point can also be located at the second copper-clad
On center line in 31 Y direction.
In the ISGW wideband bandpass filter of the present embodiment, the second copper-clad of layer dielectric plate 3 and its upper surface printing
31, the U-shaped gap 36 of a pair first, a pair of second U-shaped gap 37 and the U-shaped gap 38 of a pair of of third on the second copper-clad 31, the
Two metallic vias 34, third metallic vias 35, transition transition line 32 and feeding microstrip line 33 constitute lower layer's filter circuit；Upper layer
The mushroom-shaped EBG structure of dielectric-slab 1 and periodic arrangement thereon constitutes artificial magnetic conductor, self envelope of shaping filter
Dress to effectively inhibit space radiation and plane wave, while solving the problems, such as air resonance.
In the present embodiment, the length and width of top dielectric plate 1 is identical as the length and width of blank medium plate 2.On
The thickness of layer dielectric-slab 1 is greater than the thickness of blank medium plate 2, so that electromagnetic field band gap can cover the passband of filter, improves
The attenuation outside a channel steepness of filter.The width of layer dielectric plate 3 and top dielectric plate 1 and blank medium plate 2 it is of same size,
The length of layer dielectric plate 3 is greater than the length of top dielectric plate 1 and blank medium plate 2, to expose transition transition line 32 and feedback
Electric microstrip line 33, facilitates test.
The novel I SGW bandpass filter with dual transfer zero and Wide stop bands of the present embodiment has in practical applications
Following characteristic:
The thickness for changing top dielectric plate 1 can change the bandwidth of operation of filter passband, specifically, increasing top dielectric
The thickness of plate 1 can reduce the bandwidth of operation of passband, reduce the thickness of top dielectric plate 1, can increase the work belt of passband
It is wide；
Third metallic vias 35 can be such that the grounded inductors at different levels in the filter circuit are consistent, and change third metal
The diameter of via hole 35 can change grounded inductors at different levels, realize the adjusting to filter centre frequency, and bandwidth is constant；
Change the adjustable filtering of length and width in the first U-shaped gap 36, the second U-shaped gap 37, the U-shaped gap 38 of third
The bandwidth of operation of device and the transmission zero location on right side, specifically, increasing the first U-shaped gap 36, the second U-shaped gap 37, the
The length in three U-shaped gaps 38, can make the bandwidth of operation of the filter narrow, and make the transmission zero on the right side of the filter passband
Position moves to left；The opening width and bipod width for reducing the first U-shaped gap 36, the second U-shaped gap 37, the U-shaped gap 38 of third, can
So that the bandwidth of operation of the filter narrows, and move to left the transmission zero location on the right side of the filter passband；
Change the adjustable filtering of length and width in the first U-shaped gap 36, the second U-shaped gap 37, the U-shaped gap 38 of third
The Out-of-band rejection performance of device, specifically, increasing the length in the first U-shaped gap 36, the second U-shaped gap 37, the U-shaped gap 38 of third
Degree, can be such that the Out-of-band rejection performance of the filter improves；Reduce the first U-shaped gap 36, the second U-shaped gap 37, the U-shaped seam of third
The opening width and bipod width of gap 38 can be such that the Out-of-band rejection performance of the filter improves；
In practical applications, the loss angle tangent of blank medium plate 2 and layer dielectric plate 3 is more demanding, need to select as far as possible
The small dielectric-slab of loss angle tangent, but the loss angle tangent of top dielectric plate 1 is of less demanding, and Jie of cheap lossy may be selected
Scutum, to reduce cost.
In order to which the novel I SGW bandpass filter with dual transfer zero and Wide stop bands of the present embodiment is described in detail, below
Provide a specific example.In the specific example, top dielectric plate 1 uses FR4 plate, thickness 1.6mm, blank medium plate 2
Rogers4003C plate is used with layer dielectric plate 3, thickness is respectively 0.203mm and 0.304mm.By emulating and testing
To test result, as shown in Figure 6 and Figure 7, test result shows that return loss S11 is lower than -17dB, insertion loss S21 in passband
Less than 1.5dB；At centre frequency 18GHz, three dB bandwidth is 5.82G and relative bandwidth ratio are as follows: 32.2%, and there are two pass for tool
Defeated zero point (TZ) is respectively at 14GHz and 22.8GHz；With precipitous intermediate zone and 8GHz-14GHz, 22.8GHz-30GHz
Wide stop bands, Out-of-band rejection are greater than -30dB；Group delay is stably held in 0.4ns and arrives in 15.02GHz to 20.84GHz frequency band
0.5ns。
In conclusion the novel I SGW wideband bandpass filter of the present embodiment has small size, low section is easy of integration, easily
Processing, the intermediate zone that transmission performance is good, precipitous, has dual transfer zero and Wide stop bands, working frequency regulative mode at stable structure
Simply, bandwidth and transmission zero location can realize the advantages that controllable.
The above description is only the embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all
Equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, is applied directly or indirectly in
Other related technical areas are also included in the patent protection scope of the utility model.
Claims (10)
1. a kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands, which is characterized in that including top dielectric
Plate (1), layer dielectric plate (3) and the blank medium plate being arranged between the top dielectric plate (1) and layer dielectric plate (3)
(2)；
The upper surface of the top dielectric plate (1) is printed with the first copper-clad (11), the lower surface print of the top dielectric plate (1)
Circular metal patch (12) brushed with three row periodic arrangements, each circular metal patch (12) is equipped with to be situated between through upper layer
The first metallic vias (13) of scutum (1), the Y in the orientation and three-dimensional reference frame of the circular metal patch (12)
Axis is parallel；
The mistake that the upper surface of the layer dielectric plate (3) is printed with the second copper-clad (31), connects the second copper-clad (31) two sides
The feeding microstrip line (33) for crossing transition line (32) and being connect with transition transition line (32), the two sides of second copper-clad (31)
Edge is equipped with the second metallic vias (34) of the periodic arrangement through layer dielectric plate (3), second copper-clad (31)
Middle part is equipped with the third metallic vias (35) of the periodic arrangement through layer dielectric plate (3), second metallic vias (34)
Parallel with Y-axis with the orientation of third metallic vias (35), second copper-clad (31) is equipped with a pair of first U-shaped gap
(36), a pair of second U-shaped gap (37) and a pair of of U-shaped gap of third (38), the first U-shaped gap (36), the second U-shaped gap
(37) it is arranged with the U-shaped gap of third (38) along the direction interval parallel with Y-axis, and the pair of first U-shaped gap (36), one
To the second U-shaped gap (37) and a pair of of U-shaped gap of third (38) about the center in the second copper-clad (31) X-direction
Line is symmetrical；The lower surface of the layer dielectric plate (3) is printed with third copper-clad (39)；
Wherein, the width of the transition transition line (32) gradually becomes from the side connecting with feeding microstrip line (33) to the other side
Greatly.
2. the novel I SGW bandpass filter according to claim 1 with dual transfer zero and Wide stop bands, feature exist
In the U-shaped gap of third (38), the second U-shaped gap (37), the first U-shaped gap (36) and the second copper-clad (31) X-direction
On the spacing of center line be sequentially increased.
3. the novel I SGW bandpass filter according to claim 2 with dual transfer zero and Wide stop bands, feature exist
In a line circular metal patch (12) of the centre is located on the center line in top dielectric plate (1) Y direction.
4. the novel I SGW bandpass filter according to claim 1 with dual transfer zero and Wide stop bands, feature exist
In the third metallic vias (35) is located on the center line in the second copper-clad (31) Y direction.
5. the novel I SGW bandpass filter according to claim 1 with dual transfer zero and Wide stop bands, feature exist
In the dielectric constant of the top dielectric plate (1) is higher than blank medium plate (2) and layer dielectric plate (3), the blank medium plate
(2) identical with the dielectric constant of layer dielectric plate (3).
6. the novel I SGW bandpass filter according to claim 5 with dual transfer zero and Wide stop bands, feature exist
In the top dielectric plate (1) uses FR4 plate, and thickness 1.6mm, the blank medium plate (2) and layer dielectric plate (3) are adopted
With Rogers4003C plate, thickness is respectively 0.203mm and 0.304mm.
7. the novel I SGW bandpass filter according to claim 6 with dual transfer zero and Wide stop bands, feature exist
In the top dielectric plate (1), layer dielectric plate (3) and blank medium plate (2) are bonded together or are fixed by screws in one
It rises.
8. the novel I SGW bandpass filter according to claim 7 with dual transfer zero and Wide stop bands, feature exist
In the length and width of the top dielectric plate (1) is identical as the length and width of blank medium plate (2).
9. the novel I SGW bandpass filter according to claim 8 with dual transfer zero and Wide stop bands, feature exist
In the thickness of the top dielectric plate (1) is greater than the thickness of blank medium plate (2).
10. the novel I SGW bandpass filter according to claim 9 with dual transfer zero and Wide stop bands, feature exist
In of same size, lower layer Jie of the width and top dielectric plate (1) and blank medium plate (2) of the layer dielectric plate (3)
The length of scutum (3) is greater than the length of top dielectric plate (1) and blank medium plate (2), to expose the transition transition line
(32) and feeding microstrip line (33).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920547258.1U CN209592277U (en) | 2019-04-22 | 2019-04-22 | A kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920547258.1U CN209592277U (en) | 2019-04-22 | 2019-04-22 | A kind of novel I SGW bandpass filter with dual transfer zero and Wide stop bands |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN111600103A (en) * | 2020-05-25 | 2020-08-28 | 北京邮电大学 | Filter based on printed ridge gap waveguide |
-
2019
- 2019-04-22 CN CN201920547258.1U patent/CN209592277U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN109994806B (en) * | 2019-04-22 | 2023-12-15 | 云南大学 | ISGW broadband band-pass filter with double transmission zero points and wide stop band |
| CN111600103A (en) * | 2020-05-25 | 2020-08-28 | 北京邮电大学 | Filter based on printed ridge gap waveguide |
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