CN209584364U - A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices - Google Patents
A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices Download PDFInfo
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- CN209584364U CN209584364U CN201920096445.2U CN201920096445U CN209584364U CN 209584364 U CN209584364 U CN 209584364U CN 201920096445 U CN201920096445 U CN 201920096445U CN 209584364 U CN209584364 U CN 209584364U
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- CN
- China
- Prior art keywords
- tungsten wire
- fixture
- aluminium
- electrode
- film
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 31
- 239000004411 aluminium Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 75
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000007740 vapor deposition Methods 0.000 claims abstract description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 abstract description 22
- 230000008020 evaporation Effects 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000002146 bilateral effect Effects 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000000637 aluminium metallisation Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000523 sample Substances 0.000 description 7
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model belongs to technical field of micro-nano manufacture, provides a kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices.The special fixture is bilateral symmetry, including left fixture, left electrode, the first tungsten wire cover board, the first tungsten wire, the second tungsten wire, aluminium ring, the second tungsten wire cover board, right electrode and right fixture.Dosage using evaporation source aluminium ring is about 2.5 times of dosage before being transformed, after evaporation source aluminium ring dosage increase, the thickness limit of single vapor deposition increases to micro-meter scale rank by several hundred nanoscale ranks, and the dosage by increasing evaporation source aluminium ring can significantly improve the thickness limit of plated film.When using transformation rear jig and tungsten wire vapor deposition aluminium film, when lengthening distance between sample and evaporation source, angle is 71.4 ° between the two, and it is micro-meter scale rank that aluminium film thickness limit, which can be deposited, in single at this time, this fixture achievees the purpose that AM aluminum metallization thick film.
Description
Technical field
The utility model relates to a kind of special fixtures applied to electric-resistivity method vacuum evaporated aluminium thick film devices, are used for metallic aluminium
The vacuum evaporation of thick film deposits, and belongs to technical field of micro-nano manufacture.
Background technique
Vacuum evaporation aluminium film is referred in vacuum chamber based on the film manufacturing method of physical vapour deposition (PVD) principle, institute
The METAL HEATING PROCESS to be evaporated makes its atom obtain sufficiently high energy, is detached from the constraint of metal material surface to higher temperature,
Evaporation is transferred to substrate surface and forms the process of film.Vacuum evaporation has equipment is simple, operation is easy, rate of film build is fast etc.
Advantage.Wherein resistance heating evaporation is between heating source tungsten wire is fixed on two electrodes using fixture, and using high-purity aluminium ring as steaming
It rises and is suspended on tungsten filament, electric current is applied to tungsten wire and generates Joule heat, make to hang aluminium ring evaporation on it, in sample surfaces
Aluminium film is formed after condensation.Resistance heating method is easy to operate, evaporation rate is very fast, but more demanding to heating source, such as heats
Source need to have higher melt, lower saturated vapor pressure, high chemical stability etc..Original fixture is the problem is that vapor deposition aluminium film
Relatively thin, once made film thickness is usually several hundred nanoscale level problems to vacuum evaporation aluminium film.And with MEMS technology
Popularization and application need a large amount of thickness in the film of micro-meter scale rank in semiconductor devices occasion.Such as metal lead wire key and,
It since aluminium film has good electric property, is used generally as electrode, in the bonding of lead key, to avoid key and process
Middle probe destroys electrode structure, it is desirable that aluminium film thickness is thicker, if the problems such as being repeatedly deposited, film binding force can be brought poor, institute
With the ability for there is an urgent need to improve evaporated device, making it have evaporation thick film.
Utility model content
The utility model provides a kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices.It is to solve commonly
Evaporated device be deposited aluminium film thickness limit it is relatively low, only several hundred nanoscale ranks the problem of, the utility model proposes needles
Design to fixed vapor deposition aluminium film tungsten wire fixture, when not changing chamber size, increases evaporation source for lengthening tungsten wire
Aluminium ring suspension amount realizes the production of micro-meter scale rank film, reaches vacuum evaporated aluminium thick film to improve single evaporation thickness
Purpose.This fixture is used to hang evaporation source aluminium ring on tungsten wire, and the special fixture of fixed tungsten wire is carrying out resistance heating vapor deposition
When aluminium, heating source tungsten wire is fixed on two electrodes with fixture, and the high-purity aluminium ring of evaporation source is suspended on tungsten filament, to heating
Source applies electric current and generates Joule heat, evaporates the aluminium ring being suspended on heating source tungsten wire, forms film after sample surfaces condensation.
The technical solution of the utility model includes:
A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices, the special fixture are that bilateral symmetry is tied
Structure, including left fixture 1, left electrode 3, the first tungsten wire cover board 6, the first tungsten wire 7, the second tungsten wire 8, aluminium wire 9, the second tungsten wire cover board
10, right electrode 12 and right fixture 14；
The left fixture 1 and right fixture 14 cooperates with the first bolt 2 and the 6th bolt 15 respectively, corresponding to clamp left electrode
3 and right electrode 12；Left fixture 1 is identical with right 14 structure of fixture, is divided into fixed electrode tip and fixed tungsten filament end；
First tungsten wire 7 and the second tungsten wire 8 is horizontally fixed between left fixture 1 and right fixture 14, respectively by the
Fixation tungsten filament end and the bolt cooperation of one tungsten wire cover board 6, the second tungsten wire cover board 10, left fixture 1 and right fixture 14 are fixed；The
The aluminium ring 9 of one group of vapor deposition is hung above each spiral of one tungsten wire 7 and the second tungsten wire 8.
Influenced by chamber size, the spacing of former adjacent electrode be it is smaller, this just limits the distance between two fixtures, while
Tungsten wire length is limited, and is influenced by clamp jaw width, two tungsten wires can be at most placed between every group of fixture.Evaporation will be overworked on tungsten wire
Source aluminium ring, the thickness limit that aluminium film can be deposited in every group of electrode every time is several hundred nanoscale ranks, and pole can be deposited in four groups of electrodes altogether
Limiting thickness is also several hundred nanoscale ranks.Every group of evaporation source is larger with sample tilt angle, carries out rotation vapor deposition to sample
When, figure will appear deformation, and in non-rotating vapor deposition, the uniformity of film is poor.To realize high uniform face vapor deposition, this literary grace
The vapor deposition of aluminium film is carried out with helical tungsten filamen.We increase electrode holder spacing, use tungsten wire extended length.In this way, theoretical
The upper vapor deposition that thick film can be realized using any pair of electrode.To adapt to improved new fixture, by the structure of evaporation source tungsten wire
It optimizes.Former tungsten wire is made of the spiral that the tungsten wire of 3 Φ 1mm is wound in 6 aperture 8mm, and evaporation will be overworked on tungsten wire
Source aluminium ring, when guaranteeing to be deposited using electric current within 100A, after engineered, the tungsten wire used is still wound by the tungsten wire of 3 Φ 1mm
It forms, tungsten wire lengthens, and is formed by the spiral winding of 14 aperture 10mm.At this point, needing to consume aluminium ring by aluminium ring is overworked on tungsten wire
Quantity increases, and the thickness limit of single vapor deposition aluminium film reaches micro-meter scale rank, and the dosage by increasing evaporation source aluminium ring can
Significantly improve the thickness limit of vapor deposition aluminium film.
The utility model has the beneficial effects that the results showed that the quality using evaporation source aluminium ring is transformation after engineered
About 2.5 times of preceding dosage, after evaporation source aluminium ring dosage increase, the thickness limit of single vapor deposition is increased to by several hundred nanoscale ranks
Micro-meter scale rank can significantly improve the thickness limit of plated film by increasing the dosage of evaporation source aluminium ring.Use transformation rear jig
And when tungsten wire vapor deposition aluminium film, when lengthening distance between sample and evaporation source, angle is 71.4 ° between the two, and single can steam at this time
Aluminizer thickness limit is micro-meter scale rank, this fixture achievees the purpose that AM aluminum metallization thick film.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the fixture of the utility model.
Fig. 2 is the left fixture of the utility model.
Fig. 3 is the right fixture of the utility model.
Fig. 4 is the fixed tungsten wire cover plate of the utility model.
Fig. 5 is the jigs electrode of the utility model.
Fig. 6 is the fixture tungsten wire of the utility model.
In figure: 1 left fixture；2 first bolts；3 left electrodes；4 first tungsten wire cover boards；4 second bolts；5 third bolts；6
One tungsten wire cover board；7 first tungsten wires；8 second tungsten wires；9 aluminium rings；10 second tungsten wire cover boards；11 the 4th bolts；12 right electrodes；13
Five bolts；14 right fixtures；15 the 6th bolts.
Specific embodiment
Below in conjunction with attached drawing and technical solution, specific embodiment of the present utility model is further illustrated.
A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices, the special fixture are that bilateral symmetry is tied
Structure, including left fixture 1, left electrode 3, the first tungsten wire cover board 6, the first tungsten wire 7, the second tungsten wire 8, aluminium ring 9, the second tungsten wire cover board
10, right electrode 13 and right fixture 14；
The left fixture 1 and right fixture 14 cooperates with the first bolt 2 and the 6th bolt 15 respectively, corresponding to clamp left electrode
3 and right electrode 12；Left fixture 1 is identical with right 14 structure of fixture, is divided into fixed electrode tip and fixed tungsten filament end；
First tungsten wire 7 and the second tungsten wire 8 is horizontally fixed between left fixture 1 and right fixture 14, respectively by the
Fixation tungsten filament end and the bolt cooperation of one tungsten wire cover board 4, the second tungsten wire cover board 10, left fixture 1 and right fixture 14 are fixed；The
The aluminium ring 9 of one group of vapor deposition is hung above each spiral of one tungsten wire 7 and the second tungsten wire 8.
Overall mechanism is inside a vacuum chamber, and with mechanical pump, molecular pump is vacuumized, when reaching the true of requirement in chamber
Null value starts to reach requirement power and electric current to left electrode 3 and right electrode 13 plus electric current.Hang over the first tungsten wire 7 and the second tungsten wire
Aluminium ring above 8 each spirals all starts to melt, forms aluminum steam, forms film after sample surfaces condensation, reaches vapor deposition
The purpose of thick aluminium film.
Above scheme provides a kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices, designs a kind of dedicated
Fixture achievees the purpose that evaporate thick aluminium film.
Claims (1)
1. a kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices, which is characterized in that the special fixture is a left side
Right symmetrical structure, including left fixture (1), left electrode (3), the first tungsten wire cover board (4), the first tungsten wire (7), the second tungsten wire (8), aluminium
Ring (9), the second tungsten wire cover board (11), right electrode (13) and right fixture (14)；
The left fixture (1) and right fixture (14) cooperates with the first bolt (2) and the 6th bolt (15) respectively, and corresponding clamping is left
Electrode (3) and right electrode (13)；Left fixture (1) is identical with right fixture (14) structure, is divided into fixed electrode tip and fixed tungsten filament end；
First tungsten wire (7) and the second tungsten wire (8) is horizontally fixed between left fixture (1) and right fixture (14), is led to respectively
The fixation tungsten filament end and bolt for crossing the first tungsten wire cover board (4), the second tungsten wire cover board (11), left fixture (1) and right fixture (14) are matched
Conjunction is fixed；The aluminium ring (9) of one group of vapor deposition is hung above each spiral of first tungsten wire (7) and the second tungsten wire (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920096445.2U CN209584364U (en) | 2019-01-21 | 2019-01-21 | A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920096445.2U CN209584364U (en) | 2019-01-21 | 2019-01-21 | A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209584364U true CN209584364U (en) | 2019-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920096445.2U Expired - Fee Related CN209584364U (en) | 2019-01-21 | 2019-01-21 | A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices |
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| CN (1) | CN209584364U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109594051A (en) * | 2019-01-21 | 2019-04-09 | 大连理工大学 | A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices |
-
2019
- 2019-01-21 CN CN201920096445.2U patent/CN209584364U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109594051A (en) * | 2019-01-21 | 2019-04-09 | 大连理工大学 | A kind of special fixture applied to electric-resistivity method vacuum evaporated aluminium thick film devices |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191105 Termination date: 20210121 |
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| CF01 | Termination of patent right due to non-payment of annual fee |