CN209583628U - MEMS package structure and wafer scale MEMS package structure - Google Patents
MEMS package structure and wafer scale MEMS package structure Download PDFInfo
- Publication number
- CN209583628U CN209583628U CN201822037983.2U CN201822037983U CN209583628U CN 209583628 U CN209583628 U CN 209583628U CN 201822037983 U CN201822037983 U CN 201822037983U CN 209583628 U CN209583628 U CN 209583628U
- Authority
- CN
- China
- Prior art keywords
- mems
- electric connection
- layer
- wafer
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
Abstract
The utility model provides a kind of MEMS package structure and wafer scale MEMS package structure, and wafer scale MEMS package structure includes: MEMS wafer, and MEMS wafer includes several MEMS chips, and the front of MEMS chip is formed with connection weld pad and mechanical micro-structure；Several sealing cavity configurations, positioned at the front of MEMS chip to seal each mechanical micro-structure respectively；Capsulation material layer, positioned at the surface of MEMS wafer；Re-wiring layer, positioned at the upper surface of capsulation material layer；Several electric connection structures are located in capsulation material layer, and the bottom of electric connection structure is electrically connected with weld pad is connect, and top is electrically connected with re-wiring layer；Solder projection is electrically connected positioned at the upper surface of re-wiring layer, and with re-wiring layer.The wafer scale MEMS package structure of the utility model is sealed mechanical micro-structure by using sealing cavity configuration, mechanical micro-structure can be protected, be caused to damage in encapsulation and use process to avoid mechanical micro-structure, so that it is guaranteed that the performance of MEMS package structure.
Description
Technical field
The utility model relates to technical field of semiconductors, seal more particularly to a kind of MEMS package structure and wafer scale MEMS
Assembling structure.
Background technique
It generally will include in MEMS (Micro Electro Mechanical System, MEMS) structure several
A machinery micro-structure, the machinery micro-structure bottom are connected to chip surface, and top is suspended on chip, at work, these
Mechanical micro-structure needs to do corresponding sports under the effect of external force.
Existing packaging technology generally uses capsulation material by the direct plastic packaging of corresponding structure, and due in MEMS structure
Mechanical micro-structure top suspends and needs to do corresponding movement under the effect of external force at work, using existing packaging technology
Directly be packaged to MEMS structure not only can cause to damage to the mechanical micro-structure in MEMS structure, can also make mechanical micro- knot
Structure can not be done corresponding movement by plastic packaging under external force, to influence the performance of MEMS structure.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of MEMS package structure and
Wafer scale MEMS package structure is packaged presence to MEMS structure using existing packaging technology in the prior art for solving
Be easy the mechanical micro-structure in MEMS structure is caused to damage, and make mechanical micro-structure can not be in external force by plastic packaging
Under do corresponding movement, thus the problems such as influencing the performance of MEMS structure.
In order to achieve the above objects and other related objects, the utility model provides a kind of wafer scale MEMS package structure, institute
Stating wafer scale MEMS package structure includes:
MEMS wafer, the MEMS wafer include several MEMS chips, and the front of the MEMS chip is formed with connection
Weld pad and mechanical micro-structure；
Several sealing cavity configurations positioned at the front of the MEMS chip, and are set to the periphery of the mechanical micro-structure,
To seal each mechanical micro-structure respectively, there is gap between the machinery micro-structure and the sealed chamber；
Capsulation material layer, positioned at the surface of the MEMS wafer, and the connection weld pad and the sealing cavity configuration is complete
Portion's plastic packaging；
Re-wiring layer, positioned at the upper surface of the capsulation material layer；
Several electric connection structures are located in the capsulation material layer, and are located at the two sides of each MEMS chip,
The bottom of the electric connection structure is electrically connected with the connection weld pad, the top of the electric connection structure and the re-wiring layer
Electrical connection；
Solder projection is electrically connected positioned at the upper surface of the re-wiring layer, and with the re-wiring layer.
Optionally, the material of the sealing cavity configuration is identical as the material of the MEMS wafer.
Optionally, the top of the electric connection structure is higher than the top of the sealing cavity configuration.
Optionally, the electric connection structure includes metal lead wire or metal column.
The utility model also provides a kind of preparation method of wafer scale MEMS package structure, the wafer scale MEMS package knot
The preparation method of structure includes the following steps:
1) MEMS wafer is provided, the MEMS wafer includes several MEMS chips, and the front of the MEMS chip is formed
There are connection weld pad and mechanical micro-structure；
2) surface of Yu Suoshu MEMS wafer forms sealing cavity configuration, and the seal chamber structure setting is in the micro- knot of machinery
The periphery of structure seals each mechanical micro-structure respectively；
3) surface of Yu Suoshu MEMS wafer forms several electric connection structures, the bottom of the electric connection structure be located at
The connection weld pad of the MEMS chip two sides is electrically connected；
4) surface of Yu Suoshu MEMS wafer forms capsulation material layer, and the capsulation material layer is by the connection weld pad, institute
State electric connection structure and the sealing cavity configuration whole plastic packaging；The top of the capsulation material layer and the top of the electric connection structure
Portion's flush；
5) upper surface of Yu Suoshu capsulation material layer forms re-wiring layer, the re-wiring layer and the binding that is electrically connected
The top of structure is electrically connected；
6) upper surface of Yu Suoshu re-wiring layer forms solder projection, the solder projection and re-wiring layer electricity
Connection.
Optionally, step 2) includes the following steps:
One bonded wafer 2-1) is provided, is formed with several grooves in the bonded wafer；
The bonded wafer is bonded with the MEMS wafer 2-2), and makes the connection weld pad and the micro- knot of machinery
Structure is located in the different grooves；
The part that the bonded wafer is located above the connection weld pad is removed, 2-3) to expose the connection weld pad simultaneously
Form the sealing cavity configuration.
The utility model also provides a kind of MEMS package structure, and the MEMS package structure includes:
MEMS chip, the front of the MEMS chip are formed with connection weld pad and mechanical micro-structure；
Cavity configuration is sealed, positioned at the front of the MEMS chip, and is located at the periphery of the mechanical micro-structure, it will be described
Mechanical micro-structure sealing, has gap between the machinery micro-structure and the sealed chamber；
Capsulation material layer is moulded positioned at the front of the MEMS chip, and by the connection weld pad and the sealing cavity configuration
Envelope；
Re-wiring layer, positioned at the upper surface of the capsulation material layer；
Electric connection structure is located in the capsulation material layer, the bottom of the electric connection structure and connection weld pad electricity
Connection, the top of the electric connection structure is electrically connected with the re-wiring layer；
Solder projection is electrically connected positioned at the upper surface of the re-wiring layer, and with the re-wiring layer.
Optionally, the material of the sealing cavity configuration is identical as the material of the MEMS chip.
Optionally, the top of the electric connection structure is higher than the top of the sealing cavity configuration.
Optionally, the electric connection structure includes metal lead wire or metal column.
The utility model also provides a kind of preparation method of MEMS package structure, the preparation method of the MEMS package structure
Include the following steps:
1) MEMS wafer is provided, the MEMS wafer includes several MEMS chips, and the front of the MEMS chip is formed
There are connection weld pad and mechanical micro-structure；
2) surface of Yu Suoshu MEMS wafer forms sealing cavity configuration, and the seal chamber structure setting is in the micro- knot of machinery
The periphery of structure seals each mechanical micro-structure respectively；
3) surface of Yu Suoshu MEMS wafer forms several electric connection structures, the bottom of the electric connection structure be located at
The connection weld pad of the MEMS chip two sides is electrically connected；
4) surface of Yu Suoshu MEMS wafer forms capsulation material layer, and the capsulation material layer is by the connection weld pad, institute
State electric connection structure and the sealing cavity configuration whole plastic packaging；The top of the capsulation material layer and the top of the electric connection structure
Portion's flush；
5) upper surface of Yu Suoshu capsulation material layer forms re-wiring layer, the re-wiring layer and the binding that is electrically connected
The top of structure is electrically connected；
6) upper surface of Yu Suoshu re-wiring layer forms solder projection, the solder projection and re-wiring layer electricity
Connection；
7) the resulting structure of step 6) is cut from the gap between the adjacent MEMS chip, to obtain several
Isolated MEMS package structure.
Optionally, step 2) includes the following steps:
One bonded wafer 2-1) is provided, is formed with several grooves in the bonded wafer；
The bonded wafer is bonded with the MEMS wafer 2-2), and makes the connection weld pad and the micro- knot of machinery
Structure is located in the different grooves；
The part that the bonded wafer is located above the connection weld pad is removed, 2-3) to expose the connection weld pad simultaneously
Form the sealing cavity configuration.
As described above, the MEMS package structure and wafer scale MEMS package structure of the utility model, have below beneficial to effect
Fruit:
The wafer scale MEMS package structure and MEMS package structure of the utility model will be mechanical by using sealing cavity configuration
Micro-structure sealing, mechanical micro-structure can be protected, cause to damage in encapsulation and use process to avoid mechanical micro-structure
Wound, so that it is guaranteed that the performance of MEMS package structure；There is gap between mechanical micro-structure and sealing cavity configuration, mechanical micro-structure exists
Corresponding movement can be done under external force in sealing cavity configuration；
The preparation method of wafer scale MEMS package structure and the preparation method of MEMS package structure of the utility model pass through
It will be packaged again, mechanical micro-structure can be protected, to avoid machine after the sealing of mechanical micro-structure using sealing cavity configuration
Tool micro-structure causes to damage in encapsulation and use process, so that it is guaranteed that the performance of MEMS package structure；Mechanical micro-structure with it is close
Sealing has gap between cavity configuration, mechanical micro-structure can do corresponding movement in sealing cavity configuration under external force.
Detailed description of the invention
Fig. 1 is shown as the process of the preparation method of the wafer scale MEMS package structure provided in the utility model embodiment one
Figure.
Fig. 2~Figure 10 is shown as the preparation method of the wafer scale MEMS package structure provided in the utility model embodiment one
The structural schematic diagram that each step is presented, wherein Figure 10 is shown as the structure of the wafer scale MEMS package structure of the utility model
Schematic diagram.
Figure 11 is shown as the flow chart of the preparation method of the MEMS package structure provided in the utility model embodiment three.
Figure 12~Figure 13 is shown as walking in the preparation method of the MEMS package structure provided in the utility model embodiment three
The rapid structural schematic diagram 7) presented, wherein Figure 13 is shown as the structural schematic diagram of the MEMS package structure of the utility model.
Component label instructions
10 MEMS wafers
11 MEMS chips
12 connection weld pads
13 mechanical micro-structures
14 bonded wafers
141 grooves
15 sealing cavity configurations
16 electric connection structures
17 capsulation material layers
18 re-wiring layers
181 insulating layers
182 metal line layers
19 solder projections
20 cutting tools
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 1~Figure 13.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though it is only shown with related component in the utility model rather than when according to actual implementation in diagram
Component count, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present embodiment provides a kind of preparation method of MEMS package structure, the wafer scale MEMS package knot
The preparation method of structure includes the following steps:
1) MEMS wafer is provided, the MEMS wafer includes several MEMS chips, and the front of the MEMS chip is formed
There are connection weld pad and mechanical micro-structure；
2) surface of Yu Suoshu MEMS wafer forms sealing cavity configuration, and the seal chamber structure setting is in the micro- knot of machinery
The periphery of structure seals each mechanical micro-structure respectively；
3) surface of Yu Suoshu MEMS wafer forms several electric connection structures, the bottom of the electric connection structure be located at
The connection weld pad of the MEMS chip two sides is electrically connected；
4) surface of Yu Suoshu MEMS wafer forms capsulation material layer, and the capsulation material layer is by the connection weld pad, institute
State electric connection structure and the sealing cavity configuration whole plastic packaging；The top of the capsulation material layer and the top of the electric connection structure
Portion's flush；
5) upper surface of Yu Suoshu capsulation material layer forms re-wiring layer, the re-wiring layer and the binding that is electrically connected
The top of structure is electrically connected；
6) upper surface of Yu Suoshu re-wiring layer forms solder projection, the solder projection and re-wiring layer electricity
Connection.
In step 1), S1 step and Fig. 2 in Fig. 1 are please referred to, MEMS wafer 10 is provided, the MEMS wafer 10 includes
Several MEMS chips 11, the front of the MEMS chip 11 are formed with connection weld pad 12 and mechanical micro-structure 13.
As an example, the bottom of the machinery micro-structure 13 is connected with the MEMS chip 11, the machinery micro-structure
13 top is suspended in the top of the MEMS chip 11.
As an example, the particular number of the MEMS chip 11 can carry out according to actual needs in the MEMS wafer 10
It sets, only to include two MEMS chips 11 in the MEMS wafer 10 as an example, in actual example not in Fig. 2
As limit.
As an example, the positive connection weld pad 12 of each MEMS chip 11 and the tool of the mechanical micro-structure 13
Body quantity can be set according to actual needs, and Fig. 2 is only formed with described in one with the front of a MEMS chip 11
Mechanical micro-structure 13 and two connection weld pads 12 in actual example as an example, be not limited thereto.
In step 2), the S2 step and Fig. 3 to Fig. 5 in Fig. 1 are please referred to, the surface of Yu Suoshu MEMS wafer 10 forms close
Cavity configuration 15 is sealed, the sealing cavity configuration 15 is set to the periphery of the mechanical micro-structure 13, by each mechanical micro-structure
13 seal respectively.
As an example, step 2) includes the following steps:
One bonded wafer 14 2-1) is provided, is formed with several grooves 141 in the bonded wafer 14, as shown in Figure 3；
The bonded wafer 14 is bonded with the MEMS wafer 10 2-2), and makes the connection weld pad 12 and the machine
Tool micro-structure 13 is located in the different grooves 141, as shown in Figure 4；I.e. each mechanical micro-structure 13 is located at
In the different grooves 141, the connection weld pad 12 between adjacent two MEMS chip 11 is located at same described
In groove 141；
The part that the bonded wafer 14 is located at 12 top of connection weld pad is removed, 2-3) to expose the connection weldering
Pad 12 simultaneously forms the sealing cavity configuration 15, as shown in Figure 5；Specifically, it is brilliant to remove the bonding using techniques such as cuttings
Circle 14 is located at the part of 12 top of connection weld pad.
As an example, the material of the sealing cavity configuration 15 can be identical as the material of the MEMS wafer 10, i.e., it is described
The material of bonded wafer 14 can be identical as the material of the MEMS wafer 10.
As an example, there is gap between the machinery micro-structure 13 and the sealed chamber 15.
In step 3), S3 step and Fig. 6 in Fig. 1 are please referred to, the surface of Yu Suoshu MEMS wafer 10 forms several
Electric connection structure 16, the bottom of the electric connection structure 16 and 12 electricity of the connection weld pad for being located at 11 two sides of MEMS chip
Connection.
As an example, the electric connection structure 16 can be metal wire or metal column etc., the electric connection structure 16 is
When metal wire, metal wire can be formed as the electric connection structure in the surface of the MEMS wafer 10 using routing technique
16。
As an example, the electric connection structure 16 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 16 can be copper, gold, silver, nickel, aluminium or tin etc..
As an example, the quantity of the electric connection structure 16 can be identical as the connection quantity of weld pad 12, it is each described
Electric connection structure 16 is electrically connected with each one-to-one correspondence of connection weld pad 12.
As an example, the top of the electric connection structure 16 is higher than the top of the sealing cavity configuration 15.Certainly, at other
In example, the top of the electric connection structure 16 can also be with the top flush of the sealing cavity configuration 15.
In step 4), the S4 step and Fig. 7 and Fig. 8 in Fig. 1 are please referred to, the surface of Yu Suoshu MEMS wafer 10 forms modeling
Closure material layer 17, the capsulation material layer 17 is by the connection weld pad 12, the electric connection structure 16 and the sealing cavity configuration
15 whole plastic packagings；The top flush at the top of the capsulation material layer 17 and the electric connection structure 16.
As an example, can be using compressing and forming process, transfer shaping technology, hydraulic seal moulding process, molding bottom
Fill process, capillary underfill technique, vacuum lamination process or spin coating proceeding form institute in the surface of the MEMS wafer 10
State capsulation material layer 17.
As an example, the material of the capsulation material layer 17 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Rouge, curable polymer-based material or curable resin-based materials etc..
In one example, the height for being initially formed the capsulation material layer 17 is higher than the height of the electric connection structure 16,
The i.e. described capsulation material layer 17 is by the electric connection structure 16 enveloping plastic packaging completely, as shown in Figure 7；Then, then using chemical machine
The techniques such as tool grinding remove the part capsulation material layer 17, so that the upper surface of the capsulation material layer 17 is electrically connected with described
The top flush of structure 16, as shown in Figure 8.
It in another example, can be according to the formation capsulation material layer according to the top of the electric connection structure 16
17, so that the height of the capsulation material layer 17 formed is just identical as the height of the electric connection structure 16.It in this way can be with
It saves the technique ground to the capsulation material layer 17 and has saved cost to reduce processing step.
In step 5), S5 step and Fig. 9 in Fig. 1 are please referred to, the upper surface of Yu Suoshu capsulation material layer 17 forms weight
New route layer 18, the re-wiring layer 18 are electrically connected with the top of the electric connection structure 16.
As an example, as shown in figure 9, the re-wiring layer 18 includes a layer insulating 181 and one layer of metal line layer
The upper surface of 182, Yu Suoshu capsulation material layers 17 forms the re-wiring layer 18 and includes the following steps:
5-1) upper surface of Yu Suoshu capsulation material layer 17 forms the insulating layer 181, by photoetching and etching technics in
Groove is formed in the insulating layer 181, the groove defines position and the shape of the metal line layer 182；
The metal line layer 182 5-2) is formed in Yu Suoshu groove.
In another example, the re-wiring layer 18 includes at least two layers metal line layer 182 and at least one layer of institute
Insulating layer 181 is stated, the upper surface of Yu Suoshu capsulation material layer 17 forms the re-wiring layer 18 and includes the following steps:
5-1) upper surface of Yu Suoshu capsulation material layer 17 forms metal line layer 182 described in first layer；
5-2) upper surface of Yu Suoshu capsulation material layer 17 forms insulating layer 181 described in first layer, insulate described in first layer
Layer 181 encapsulates metal line layer 182 described in first layer, and the upper surface of insulating layer 181 described in first layer is higher than described in first layer
The upper surface of metal line layer 182；
5-3) form what several layers were electrically connected with metal line layer 182 described in first layer in the insulating layer 181 described in first layer
Other metal line layers 182 of stacked spaced apart arrangement, are electrically connected between the adjacent metal line layer 182 via metal plug.
As an example, in above-mentioned example, the material of the metal line layer 182 can be but be not limited only to copper, aluminium, nickel, gold,
One of silver, titanium material or two kinds and two or more combined materials, and PVD, CVD, sputtering, plating or chemical plating can be used
Etc. techniques form the metal line layer 182.The material of the insulating layer 181 can be low k dielectric；Specifically, described exhausted
Edge layer 181 can be using one of epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass material
Material, and the insulating layer 181 can be formed using techniques such as spin coating, CVD, plasma enhanced CVDs.
In step 6), S6 step and Figure 10 in Fig. 1 are please referred to, the upper surface of Yu Suoshu re-wiring layer 18 forms weldering
Expect that convex block 19, the solder projection 19 are electrically connected with the re-wiring layer 18.
In one example, the upper surface of Yu Suoshu re-wiring layer 18 forms solder projection 19 and includes the following steps:
6-1) upper surface of Yu Suoshu re-wiring layer 18 forms metal column, the metal column and the metal line layer 182
Electrical connection；
6-2) surface of Yu Suoshu metal column forms soldered ball.
As an example, the material of the metal column can for one of copper, aluminium, nickel, gold, silver, titanium material or two kinds and
Two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition process (CVD), sputtering,
Any technique in plating or chemical plating forms the metal column.The material of the soldered ball can for copper, aluminium, nickel, gold, silver,
One of titanium material or two kinds and two or more combined materials can form the soldered ball by planting ball reflux technique.
In another example, as shown in Figure 10, the solder projection 19 is a soldered ball, can be by planting ball reflux technique
Soldered ball is directly formed as the solder projection 19.
Embodiment two
Incorporated by reference to Fig. 2 to Fig. 9 with continued reference to Figure 10, the present embodiment also provides a kind of MEMS package structure, the wafer scale
MEMS package structure includes: MEMS wafer 10, and the MEMS wafer 10 includes several MEMS chips 11, the MEMS chip 11
Front be formed with connection weld pad 12 and mechanical micro-structure 13；Several sealing cavity configurations 15, the sealing cavity configuration 15 are located at
The front of the MEMS chip 11, and it is set to the periphery of the mechanical micro-structure 13, each mechanical micro-structure 13 is divided
It does not seal, there is gap between the machinery micro-structure 13 and the sealed chamber 15；Capsulation material layer 17, the capsulation material
Layer 17 is located at the surface of the MEMS wafer 10, and by the connection weld pad 12 and the whole plastic packagings of the sealing cavity configuration 15；Weight
New route layer 18, the re-wiring layer 18 are located at the upper surface of the capsulation material layer 17；Several electric connection structures 16, institute
It states electric connection structure 16 to be located in the capsulation material layer 17, and is located at the two sides of each MEMS chip 11, the electricity
The bottom of connection structure 16 is electrically connected with the connection weld pad 12, the top of the electric connection structure 16 and the re-wiring layer
18 electrical connections；Solder projection 19, the solder projection 19 are located at the upper surface of the re-wiring layer 18, and with the cloth again
Line layer 18 is electrically connected.
As an example, the bottom of the machinery micro-structure 13 is connected with the MEMS chip 11, the machinery micro-structure
13 top is suspended in the top of the MEMS chip 11.
As an example, the particular number of the MEMS chip 11 can carry out according to actual needs in the MEMS wafer 10
It sets, only to include two MEMS chips 11 in the MEMS wafer 10 as an example, in actual example not in Fig. 2
As limit.
As an example, the positive connection weld pad 12 of each MEMS chip 11 and the tool of the mechanical micro-structure 13
Body quantity can be set according to actual needs, and Fig. 2 is only formed with described in one with the front of a MEMS chip 11
Mechanical micro-structure 13 and two connection weld pads 12 in actual example as an example, be not limited thereto.
As an example, the material of the sealing cavity configuration 15 can be identical as the material of the MEMS wafer 10.
As an example, the electric connection structure 16 can be metal wire or metal column etc., the electric connection structure 16 is
When metal wire, metal wire can be formed as the electric connection structure in the surface of the MEMS wafer 10 using routing technique
16。
As an example, the electric connection structure 16 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 16 can be copper, gold, silver, nickel, aluminium or tin etc..
As an example, the quantity of the electric connection structure 16 can be identical as the connection quantity of weld pad 12, it is each described
Electric connection structure 16 is electrically connected with each one-to-one correspondence of connection weld pad 12.
As an example, the top of the electric connection structure 16 is higher than the top of the sealing cavity configuration 15.Certainly, at other
In example, the top of the electric connection structure 16 can also be with the top flush of the sealing cavity configuration 15.
As an example, the material of the capsulation material layer 17 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Rouge, curable polymer-based material or curable resin-based materials etc..
In one example, the re-wiring layer 18 includes a layer insulating 181 and one layer of metal line layer 182, the gold
Belong to line layer 182 to be located in the insulating layer 181.Certainly, in other examples, the re-wiring layer 18 can also include at least
The laminated construction of two layers of metal line layer 182 and at least one layer of insulating layer 181.
As an example, the material of the metal line layer 182 can be but be not limited only to copper, aluminium, nickel, gold, silver, one in titanium
Kind material or two kinds and two or more combined materials, and the techniques such as PVD, CVD, sputtering, plating or chemical plating can be used and formed
The metal line layer 182.The material of the insulating layer 181 can be low k dielectric.
In one example, the solder projection 19 includes: metal column, and the metal column is electrically connected with the metal line layer 182
It connects；Soldered ball, the soldered ball are located at the surface of the metal column.The material of the metal column can be copper, aluminium, nickel, gold, silver, titanium
One of material or two kinds and two or more combined materials, physical gas-phase deposition (PVD), chemical gaseous phase can be passed through
Any technique in depositing operation (CVD), sputtering, plating or chemical plating forms the metal column.The material of the soldered ball can
Think one of copper, aluminium, nickel, gold, silver, titanium material or two kinds and two or more combined materials, it can be by planting ball reflux
Technique forms the soldered ball.
In another example, the solder projection 19 is soldered ball.
Embodiment three
Figure 11 is please referred to, the utility model also provides a kind of preparation method of MEMS package structure, the MEMS package knot
The preparation method of structure includes the following steps:
1) MEMS wafer is provided, the MEMS wafer includes several MEMS chips, and the front of the MEMS chip is formed
There are connection weld pad and mechanical micro-structure；
2) surface of Yu Suoshu MEMS wafer forms sealing cavity configuration, and the seal chamber structure setting is in the micro- knot of machinery
The periphery of structure seals each mechanical micro-structure respectively；
3) surface of Yu Suoshu MEMS wafer forms several electric connection structures, the bottom of the electric connection structure be located at
The connection weld pad of the MEMS chip two sides is electrically connected；
4) surface of Yu Suoshu MEMS wafer forms capsulation material layer, and the capsulation material layer is by the connection weld pad, institute
State electric connection structure and the sealing cavity configuration whole plastic packaging；The top of the capsulation material layer and the top of the electric connection structure
Portion's flush；
5) upper surface of Yu Suoshu capsulation material layer forms re-wiring layer, the re-wiring layer and the binding that is electrically connected
The top of structure is electrically connected；
6) upper surface of Yu Suoshu re-wiring layer forms solder projection, the solder projection and re-wiring layer electricity
Connection；
7) the resulting structure of step 6) is cut from the gap between the adjacent MEMS chip, to obtain several
Isolated MEMS package structure.
In step 1), S1 step and Fig. 2 in Figure 11 are please referred to, MEMS wafer 10 is provided, the MEMS wafer 10 is wrapped
Several MEMS chips 11 are included, the front of the MEMS chip 11 is formed with connection weld pad 12 and mechanical micro-structure 13.
As an example, the particular number of the MEMS chip 11 can carry out according to actual needs in the MEMS wafer 10
It sets, only to include two MEMS chips 11 in the MEMS wafer 10 as an example, in actual example not in Fig. 2
As limit.
As an example, the positive connection weld pad 12 of each MEMS chip 11 and the tool of the mechanical micro-structure 13
Body quantity can be set according to actual needs, and Fig. 2 is only formed with described in one with the front of a MEMS chip 11
Mechanical micro-structure 13 and two connection weld pads 12 in actual example as an example, be not limited thereto.
In step 2), the S2 step and Fig. 3 to Fig. 5 in Figure 11 are please referred to, the surface of Yu Suoshu MEMS wafer 10 is formed
Cavity configuration 15 is sealed, the sealing cavity configuration 15 is set to the periphery of the mechanical micro-structure 13, by each micro- knot of machinery
Structure 13 seals respectively.
As an example, step 2) includes the following steps:
One bonded wafer 14 2-1) is provided, is formed with several grooves 141 in the bonded wafer 14, as shown in Figure 3；
The bonded wafer 14 is bonded with the MEMS wafer 10 2-2), and makes the connection weld pad 12 and the machine
Tool micro-structure 13 is located in the different grooves 141, as shown in Figure 4；I.e. each mechanical micro-structure 13 is located at
In the different grooves 141, the connection weld pad 12 between adjacent two MEMS chip 11 is located at same described
In groove 141；
The part that the bonded wafer 14 is located at 12 top of connection weld pad is removed, 2-3) to expose the connection weldering
Pad 12 simultaneously forms the sealing cavity configuration 15, as shown in Figure 5；Specifically, it is brilliant to remove the bonding using techniques such as cuttings
Circle 14 is located at the part of 12 top of connection weld pad.
As an example, the material of the sealing cavity configuration 15 can be identical as the material of the MEMS wafer 10, i.e., it is described
The material of bonded wafer 14 can be identical as the material of the MEMS wafer 10.
As an example, there is gap between the machinery micro-structure 13 and the sealed chamber 15.
In step 3), S3 step and Fig. 6 in Figure 11 are please referred to, the surface of Yu Suoshu MEMS wafer 10 forms several
Electric connection structure 16, the bottom of the electric connection structure 16 and 12 electricity of the connection weld pad for being located at 11 two sides of MEMS chip
Connection.
As an example, the electric connection structure 16 can be metal wire or metal column etc., the electric connection structure 16 is
When metal wire, metal wire can be formed as the electric connection structure in the surface of the MEMS wafer 10 using routing technique
16。
As an example, the electric connection structure 16 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 16 can be copper, gold, silver, nickel, aluminium or tin etc..
As an example, the quantity of the electric connection structure 16 can be identical as the connection quantity of weld pad 12, it is each described
Electric connection structure 16 is electrically connected with each one-to-one correspondence of connection weld pad 12.
As an example, the top of the electric connection structure 16 is higher than the top of the sealing cavity configuration 15.Certainly, at other
In example, the top of the electric connection structure 16 can also be with the top flush of the sealing cavity configuration 15.
In step 4), the S4 step and Fig. 7 and Fig. 8 in Figure 11 are please referred to, the surface of Yu Suoshu MEMS wafer 10 is formed
Capsulation material layer 17, the capsulation material layer 17 is by the connection weld pad 12, the electric connection structure 16 and the seal chamber knot
The whole plastic packagings of structure 15；The top flush at the top of the capsulation material layer 17 and the electric connection structure 16.
As an example, can be using compressing and forming process, transfer shaping technology, hydraulic seal moulding process, molding bottom
Fill process, capillary underfill technique, vacuum lamination process or spin coating proceeding form institute in the surface of the MEMS wafer 10
State capsulation material layer 17.
As an example, the material of the capsulation material layer 17 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Rouge, curable polymer-based material or curable resin-based materials etc..
In one example, the height for being initially formed the capsulation material layer 17 is higher than the height of the electric connection structure 16,
The i.e. described capsulation material layer 17 is by the electric connection structure 16 enveloping plastic packaging completely, as shown in Figure 7；Then, then using chemical machine
The techniques such as tool grinding remove the part capsulation material layer 17, so that the upper surface of the capsulation material layer 17 is electrically connected with described
The top flush of structure 16, as shown in Figure 8.
It in another example, can be according to the formation capsulation material layer according to the top of the electric connection structure 16
17, so that the height of the capsulation material layer 17 formed is just identical as the height of the electric connection structure 16.It in this way can be with
It saves the technique ground to the capsulation material layer 17 and has saved cost to reduce processing step.
In step 5), S5 step and Fig. 9 in Figure 11 are please referred to, the upper surface of Yu Suoshu capsulation material layer 17 forms weight
New route layer 18, the re-wiring layer 18 are electrically connected with the top of the electric connection structure 16.
As an example, as shown in figure 9, the re-wiring layer 18 includes a layer insulating 181 and one layer of metal line layer
The upper surface of 182, Yu Suoshu capsulation material layers 17 forms the re-wiring layer 18 and includes the following steps:
5-1) upper surface of Yu Suoshu capsulation material layer 17 forms the insulating layer 181, by photoetching and etching technics in
Groove is formed in the insulating layer 181, the groove defines position and the shape of the metal line layer 182；
The metal line layer 182 5-2) is formed in Yu Suoshu groove.
In another example, the re-wiring layer 18 includes at least two layers metal line layer 182 and at least one layer of institute
Insulating layer 181 is stated, the upper surface of Yu Suoshu capsulation material layer 17 forms the re-wiring layer 18 and includes the following steps:
5-1) upper surface of Yu Suoshu capsulation material layer 17 forms metal line layer 182 described in first layer；
5-2) upper surface of Yu Suoshu capsulation material layer 17 forms insulating layer 181 described in first layer, insulate described in first layer
Layer 181 encapsulates metal line layer 182 described in first layer, and the upper surface of insulating layer 181 described in first layer is higher than described in first layer
The upper surface of metal line layer 182；
5-3) form what several layers were electrically connected with metal line layer 182 described in first layer in the insulating layer 181 described in first layer
Other metal line layers 182 of stacked spaced apart arrangement, are electrically connected between the adjacent metal line layer 182 via metal plug.
As an example, in above-mentioned example, the material of the metal line layer 182 can be but be not limited only to copper, aluminium, nickel, gold,
One of silver, titanium material or two kinds and two or more combined materials, and PVD, CVD, sputtering, plating or chemical plating can be used
Etc. techniques form the metal line layer 182.The material of the insulating layer 181 can be low k dielectric；Specifically, described exhausted
Edge layer 181 can be using one of epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass material
Material, and the insulating layer 181 can be formed using techniques such as spin coating, CVD, plasma enhanced CVDs.
In step 6), S6 step and Figure 10 in Figure 11 are please referred to, the upper surface of Yu Suoshu re-wiring layer 18 is formed
Solder projection 19, the solder projection 19 are electrically connected with the re-wiring layer 18.
In one example, the upper surface of Yu Suoshu re-wiring layer 18 forms solder projection 19 and includes the following steps:
6-1) upper surface of Yu Suoshu re-wiring layer 18 forms metal column, the metal column and the metal line layer 182
Electrical connection；
6-2) surface of Yu Suoshu metal column forms soldered ball.
As an example, the material of the metal column can for one of copper, aluminium, nickel, gold, silver, titanium material or two kinds and
Two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition process (CVD), sputtering,
Any technique in plating or chemical plating forms the metal column.The material of the soldered ball can for copper, aluminium, nickel, gold, silver,
One of titanium material or two kinds and two or more combined materials can form the soldered ball by planting ball reflux technique.
In another example, as shown in Figure 10, the solder projection 19 is a soldered ball, can be by planting ball reflux technique
Soldered ball is directly formed as the solder projection 19.
In step 7), the S7 step and Figure 12 to Figure 13 in Figure 11 are please referred to, between the adjacent MEMS chip 11
Gap the resulting structure of step 6) is cut, with obtain several separation MEMS package structure.
As an example, there is Cutting Road, along the Cutting Road cutting step 6 between the adjacent MEMS chip 11) gained
Structure the MEMS core is packaged in each MEMS package structure to obtain several MEMS package structures
Piece 11, as shown in figure 13.
Example IV
Incorporated by reference to Fig. 1 to Figure 12 refering to fig. 13, the utility model also provides a kind of MEMS package structure, the MEMS package
Structure includes: MEMS chip 11, and the front of the MEMS chip 11 is formed with connection weld pad 12 and mechanical micro-structure 13；Seal chamber
Structure 15, the sealing cavity configuration 15 are located at the front of the MEMS chip 11, and are located at the periphery of the mechanical micro-structure 13,
To seal the mechanical micro-structure 13, there is gap between the machinery micro-structure 13 and the sealed chamber 15；Plastic packaging material
The bed of material 17, the capsulation material layer 17 are located at the front of the MEMS chip 11, and by the connection weld pad 12 and the sealing
15 plastic packaging of cavity configuration；Re-wiring layer 18, the re-wiring layer 18 are located at the upper surface of the capsulation material layer 17；Electrical connection
Structure 16, the electric connection structure 16 are located in the capsulation material layer 17, the bottom of the electric connection structure 16 and the company
The electrical connection of weld pad 12 is connect, the top of the electric connection structure 16 is electrically connected with the re-wiring layer 18；Solder projection 19, it is described
Solder projection 19 is located at the upper surface of the re-wiring layer 18, and is electrically connected with the re-wiring layer 18.
As an example, the bottom of the machinery micro-structure 13 is connected with the MEMS chip 11, the machinery micro-structure
13 top is suspended in the top of the MEMS chip 11.
As an example, the MEMS chip 11 the positive connection weld pad 12 and the mechanical micro-structure 13 it is specific
Quantity can be set according to actual needs, and it is micro- that Figure 13 is only formed with the machinery with the front of the MEMS chip 11
Structure 13 and two connection weld pads 12 in actual example as an example, be not limited thereto.
As an example, the material of the sealing cavity configuration 15 can be identical as the material of the MEMS chip 11.
As an example, the electric connection structure 16 can be metal wire or metal column etc., the electric connection structure 16 is
When metal wire, metal wire can be formed as the electric connection structure in the surface of the MEMS chip 11 using routing technique
16。
As an example, the electric connection structure 16 can be the metal connecting line of any one metal material, it is preferable that this reality
It applies in example, the material of the electric connection structure 16 can be copper, gold, silver, nickel, aluminium or tin etc..
As an example, the quantity of the electric connection structure 16 can be identical as the connection quantity of weld pad 12, it is each described
Electric connection structure 16 is electrically connected with each one-to-one correspondence of connection weld pad 12.
As an example, the top of the electric connection structure 16 is higher than the top of the sealing cavity configuration 15.Certainly, at other
In example, the top of the electric connection structure 16 can also be with the top flush of the sealing cavity configuration 15.
As an example, the material of the capsulation material layer 17 can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Rouge, curable polymer-based material or curable resin-based materials etc..
In one example, the re-wiring layer 18 includes a layer insulating 181 and one layer of metal line layer 182, the gold
Belong to line layer 182 to be located in the insulating layer 181.Certainly, in other examples, the re-wiring layer 18 can also include at least
The laminated construction of two layers of metal line layer 182 and at least one layer of insulating layer 181.
As an example, the material of the metal line layer 182 can be but be not limited only to copper, aluminium, nickel, gold, silver, one in titanium
Kind material or two kinds and two or more combined materials, and the techniques such as PVD, CVD, sputtering, plating or chemical plating can be used and formed
The metal line layer 182.The material of the insulating layer 181 can be low k dielectric.
In one example, the solder projection 19 includes: metal column, and the metal column is electrically connected with the metal line layer 182
It connects；Soldered ball, the soldered ball are located at the surface of the metal column.The material of the metal column can be copper, aluminium, nickel, gold, silver, titanium
One of material or two kinds and two or more combined materials, physical gas-phase deposition (PVD), chemical gaseous phase can be passed through
Any technique in depositing operation (CVD), sputtering, plating or chemical plating forms the metal column.The material of the soldered ball can
Think one of copper, aluminium, nickel, gold, silver, titanium material or two kinds and two or more combined materials, it can be by planting ball reflux
Technique forms the soldered ball.
In another example, the solder projection 19 is soldered ball.
In conclusion the MEMS package structure and wafer scale MEMS package structure of the utility model, the wafer scale MEMS
Encapsulating structure includes: MEMS wafer, and the MEMS wafer includes several MEMS chips, and the front of the MEMS chip is formed with
Connect weld pad and mechanical micro-structure；Several sealing cavity configurations, positioned at the front of the MEMS chip, and are set to the machinery
Each mechanical micro-structure is sealed respectively, is had between the machinery micro-structure and the sealed chamber by the periphery of micro-structure
There is gap；Capsulation material layer, positioned at the surface of the MEMS wafer, and the connection weld pad and the sealing cavity configuration is whole
Plastic packaging；Re-wiring layer, positioned at the upper surface of the capsulation material layer；Several electric connection structures are located at the capsulation material
In layer, and the two sides of each MEMS chip being located at, the bottom of the electric connection structure is electrically connected with the connection weld pad,
The top of the electric connection structure is electrically connected with the re-wiring layer；Solder projection, positioned at the upper table of the re-wiring layer
Face, and be electrically connected with the re-wiring layer.The wafer scale MEMS package structure and MEMS package structure of the utility model pass through
Mechanical micro-structure is sealed using sealing cavity configuration, mechanical micro-structure can be protected, sealed to avoid mechanical micro-structure
It causes to damage in dress and use process, so that it is guaranteed that the performance of MEMS package structure；Between mechanical micro-structure and sealing cavity configuration
With gap, mechanical micro-structure can do corresponding movement in sealing cavity configuration under external force；The crystalline substance of the utility model
The preparation method of circle grade MEMS package structure and the preparation method of MEMS package structure will be mechanical micro- by using sealing cavity configuration
It is packaged, mechanical micro-structure can be protected again after sealing structure, encapsulating and using to avoid mechanical micro-structure
It causes to damage in journey, so that it is guaranteed that the performance of MEMS package structure；There is gap, machine between mechanical micro-structure and sealing cavity configuration
Tool micro-structure can do corresponding movement in sealing cavity configuration under external force.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (8)
1. a kind of wafer scale MEMS package structure, which is characterized in that the wafer scale MEMS package structure includes:
MEMS wafer, the MEMS wafer include several MEMS chips, and the front of the MEMS chip is formed with connection weld pad
And mechanical micro-structure；
Several sealing cavity configurations positioned at the front of the MEMS chip, and are set to the periphery of the mechanical micro-structure, will
Each mechanical micro-structure seals respectively, has gap between the machinery micro-structure and the sealing cavity configuration；
Capsulation material layer is all moulded positioned at the surface of the MEMS wafer, and by the connection weld pad and the sealing cavity configuration
Envelope；
Re-wiring layer, positioned at the upper surface of the capsulation material layer；
Several electric connection structures are located in the capsulation material layer, and are located at the two sides of each MEMS chip, described
The bottom of electric connection structure is electrically connected with the connection weld pad, and the top of the electric connection structure is electrically connected with the re-wiring layer
It connects；
Solder projection is electrically connected positioned at the upper surface of the re-wiring layer, and with the re-wiring layer.
2. wafer scale MEMS package structure according to claim 1, which is characterized in that it is described sealing cavity configuration material with
The material of the MEMS wafer is identical.
3. wafer scale MEMS package structure according to claim 1, which is characterized in that the top of the electric connection structure is high
In the top of the sealing cavity configuration.
4. wafer scale MEMS package structure according to claim 1, which is characterized in that the electric connection structure includes metal
Lead or metal column.
5. a kind of MEMS package structure, which is characterized in that the MEMS package structure includes:
MEMS chip, the front of the MEMS chip are formed with connection weld pad and mechanical micro-structure；
Cavity configuration is sealed, positioned at the front of the MEMS chip, and is located at the periphery of the mechanical micro-structure, by the machinery
Micro-structure sealing, has gap between the machinery micro-structure and the sealing cavity configuration；
Capsulation material layer, positioned at the front of the MEMS chip, and by the connection weld pad and the sealing cavity configuration plastic packaging；
Re-wiring layer, positioned at the upper surface of the capsulation material layer；
Electric connection structure is located in the capsulation material layer, and the bottom of the electric connection structure is electrically connected with the connection weld pad,
The top of the electric connection structure is electrically connected with the re-wiring layer；
Solder projection is electrically connected positioned at the upper surface of the re-wiring layer, and with the re-wiring layer.
6. MEMS package structure according to claim 5, which is characterized in that it is described sealing cavity configuration material with it is described
The material of MEMS chip is identical.
7. MEMS package structure according to claim 5, which is characterized in that the top of the electric connection structure is higher than described
Seal the top of cavity configuration.
8. MEMS package structure according to claim 5, which is characterized in that the electric connection structure include metal lead wire or
Metal column.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822037983.2U CN209583628U (en) | 2018-12-06 | 2018-12-06 | MEMS package structure and wafer scale MEMS package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822037983.2U CN209583628U (en) | 2018-12-06 | 2018-12-06 | MEMS package structure and wafer scale MEMS package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209583628U true CN209583628U (en) | 2019-11-05 |
Family
ID=68349699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822037983.2U Active CN209583628U (en) | 2018-12-06 | 2018-12-06 | MEMS package structure and wafer scale MEMS package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209583628U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109485010A (en) * | 2018-12-06 | 2019-03-19 | 中芯长电半导体（江阴）有限公司 | MEMS package structure, wafer scale MEMS package structure and preparation method thereof |
-
2018
- 2018-12-06 CN CN201822037983.2U patent/CN209583628U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109485010A (en) * | 2018-12-06 | 2019-03-19 | 中芯长电半导体（江阴）有限公司 | MEMS package structure, wafer scale MEMS package structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104229720B (en) | Chip layout and the method for manufacturing chip layout | |
| CN109285828A (en) | Fan-out-type antenna packages structure with air chamber and preparation method thereof | |
| CN102344110B (en) | Quad flat non-leaded package structure and method of micro electro mechanical system device | |
| CN104025288A (en) | Semiconductor package and method of manufacturing the same | |
| CN104409437B (en) | Encapsulating structure rerouted after two-sided BUMP chip packages and preparation method thereof | |
| CN106340497A (en) | Encapsulated die, microelectronic package containing same, and method of manufacturing said microelectronic package | |
| CN105489516A (en) | Packaging method of fan-out type chip, and packaging structure | |
| CN107507821A (en) | The encapsulating structure and method for packing of integrated image sensor chip and logic chip | |
| CN206225349U (en) | Fingerprint recognition module and fingerprint recognition chip-packaging structure | |
| CN105621345A (en) | MEMS (Micro Electro Mechanical Systems) chip integrated packaging structure and packaging method | |
| CN103400830B (en) | Multilayer chiop stacked structure and its implementation | |
| CN107452702A (en) | The encapsulating structure and method for packing of semiconductor chip | |
| CN107611045A (en) | A kind of three-dimensional chip encapsulating structure and its method for packing | |
| CN108010906A (en) | A kind of package structure of semiconductor device and method for packing | |
| CN104051355B (en) | package-on-package structure and forming method thereof | |
| CN109665487A (en) | A kind of MEMS device wafer scale system packaging method and encapsulating structure | |
| CN107195551A (en) | Fan-out-type laminated packaging structure and preparation method thereof | |
| CN104576417B (en) | Encapsulating structure and method for packing | |
| CN103199075A (en) | Wafer level semiconductor encapsulation structure with stacking chips and manufacturing method thereof | |
| CN107195625A (en) | Two-sided system-level laminated packaging structure of plastic packaging fan-out-type and preparation method thereof | |
| CN209583628U (en) | MEMS package structure and wafer scale MEMS package structure | |
| CN105810593B (en) | A kind of fan-out package structure and its packaging method | |
| CN103456706B (en) | Discrete-semiconductor device encapsulation and manufacture method | |
| CN110137157A (en) | Semiconductor package and preparation method thereof | |
| CN208240665U (en) | Semiconductor packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |
|
| CP03 | Change of name, title or address |