CN209561452U - A kind of eyeshield LED encapsulation structure - Google Patents
A kind of eyeshield LED encapsulation structure Download PDFInfo
- Publication number
- CN209561452U CN209561452U CN201920111063.2U CN201920111063U CN209561452U CN 209561452 U CN209561452 U CN 209561452U CN 201920111063 U CN201920111063 U CN 201920111063U CN 209561452 U CN209561452 U CN 209561452U
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- Prior art keywords
- led chip
- layer
- type semiconductor
- semiconductor layer
- encapsulation structure
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000004033 plastic Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a kind of eyeshield LED encapsulation structures, reeded rack body is opened including upper end, it further include the metal substrate of installation in the groove, loaded on the LED chip on the metal substrate central part, by Plastic Division that the LED chip is packaged on the metal substrate and the reflector plate being oppositely arranged in the Plastic Division and with the LED chip, the shape of the reflector plate be greater than the LED chip shape and with the LED chip separately, the groove is up big and down small rotary table connected in star, it is equipped in the side wall of the groove and increases irreflexive salient point or recess；The LED chip successively includes substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer, transparent conductive layer, nano-silver layer and the P electrode to electrically conduct with the p type semiconductor layer and the N electrode that the n type semiconductor layer electrically conducts from bottom to top.
Description
Technical field
The utility model relates to field of lighting devices, in particular to a kind of eyeshield LED encapsulation structure.
Background technique
LED component has obtained increasingly extensive answer the advantages that low energy consumption, the service life is long, response is fast and luminous efficiency is high due to it
With.General LED lamplight is more strong, dazzling uncomfortable feeling may be caused to human eye in direct-view, to prevent LED
Lamp from dazzling, the cloche or plastic housing that frosted is usually used live LED light, or encase LED light with the cloth of light color, but above-mentioned
Mode can all influence the brightness of LED light.
Utility model content
In order to solve the above technical problems, the utility model provides a kind of eyeshield LED encapsulation structure, LED light can be prevented dazzling,
Improve comfort level, while brightness with higher.
The technical solution adopted in the utility model is: a kind of eyeshield LED encapsulation structure is provided, including upper end open it is reeded
Rack body further includes installation metal substrate in the groove, loaded on the LED core on the metal substrate central part
Piece, the Plastic Division that the LED chip is packaged on the metal substrate and be set to the Plastic Division in and with the LED core
The reflector plate that piece is oppositely arranged, the shape of the reflector plate are greater than the shape of the LED chip and alternate with the LED chip
Every the groove is up big and down small rotary table connected in star, is equipped in the side wall of the groove and increases irreflexive salient point or recess；
The LED chip from bottom to top successively include substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer, transparent conductive layer,
Nano-silver layer and the P electrode to electrically conduct with the p type semiconductor layer, the N to electrically conduct with the n type semiconductor layer electricity
Pole.
In eyeshield LED encapsulation structure described in the utility model, the nano-silver layer with a thickness of 1~10nm.
In eyeshield LED encapsulation structure described in the utility model, the p type semiconductor layer and transparent conductive layer it
Between correspond to P electrode lower zone be equipped with current barrier layer.
In eyeshield LED encapsulation structure described in the utility model, passivation layer is equipped with above the transparency conducting layer.
In eyeshield LED encapsulation structure described in the utility model, the reflector plate is embedded in the Plastic Division.
In eyeshield LED encapsulation structure described in the utility model, lens are installed at the top of the rack body.
Eyeshield LED encapsulation structure provided by the utility model sends out LED chip forward direction by the way that reflecting piece is arranged in centre
Intense light out can be reflected into behind recess sidewall or bottom by reflector plate and exhale again, can avoid light direct projection and go out, and one
Determine solve the problems, such as lamp from dazzling in degree；It is equipped in the side wall of groove and increases irreflexive salient point or recess, so as to mention
The diffusing reflection probability of high light line, and then the light emission luminance of LED light is promoted, to make up the light efficiency loss of LED chip；In LED chip
Nano-silver layer can be effectively reduced the bulk resistor of transparency conducting layer；Meanwhile nano-silver layer is combined with IT0 transparency conducting layer,
The electric current ability extending transversely that can be improved IT0 transparency conducting layer, improves the brightness of LED chip；In addition, receiving in nano-silver layer
Rice Argent grain is capable of the light of effective reflected fluorescent light powder retroeflection, further promotes the brightness of LED chip.
Detailed description of the invention
Below in conjunction with accompanying drawings and embodiments, the utility model is described in further detail, in attached drawing:
Fig. 1 is the structural schematic diagram of the utility model embodiment；
Fig. 2 is the structural schematic diagram of LED chip in the utility model embodiment.
Specific embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to explain
The utility model is not used to limit the utility model.
As shown in Figure 1, eyeshield LED encapsulation structure provided by the embodiment of the utility model, including rack body 1, Metal Substrate
Plate 2, LED chip 3, Plastic Division 4 and reflector plate 5.1 upper end of rack body is provided with groove 11, metal substrate 2, LED chip 3, modeling
Envelope portion 4 and reflector plate 5 are installed in groove 11.Metal substrate 2 is mounted on 11 bottom of groove, and two sides are to rack body 1
It is outer to stretch out the pin 12 for being formed and being connect with circuit board.LED chip 3 is loaded on 2 central part of metal substrate, and passes through Plastic Division 4
It is packaged on metal substrate 2；Plastic Division 4 is epoxy resin or silica gel, has light transmittance height, refractive index height, good fluidity, is easy to
Spraying, the features such as thermal stability is good.Reflector plate 5 is can be with the thin slice of reflection light, such as aluminium reflecting piece, glass reflecting piece and plastic cement
Reflecting piece is embedded in Plastic Division 4, is set to 3 top of LED chip, is oppositely arranged with 3 forward direction of LED chip, and reflector plate 5
Shape be greater than the shape of LED chip 3, so that the positive intense light issued of LED chip 3 is all stopped by reflector plate 5, reflect
Piece 5 and the setting separated by a distance of LED chip 3 enable the positive intense light issued of LED chip 3 to be reflected by reflector plate 5 recessed
It is exhaled again behind 11 side wall of slot or bottom, can avoid light direct projection and go out, solve the problems, such as lamp from dazzling to a certain extent.
Partially reflected after being stopped due to the light of LED chip by radiogram, the light luminance and light efficiency issued all by impacted reduction,
Up big and down small truncated cone-shaped groove shapes are set as by groove 11 to this present embodiment, is equipped with to increase in the side wall of groove 11 and overflow instead
The salient point or recess 13 penetrated, so that the diffusing reflection probability of light can be improved, and then promote the light emission luminance of LED light, to make up LED
The light efficiency of chip loses.Meanwhile the present embodiment is equipped with the service efficiency for enhancing light and the effect that shines at the top of rack body 1
The lens 6 of rate.
As shown in Fig. 2, LED chip 3 successively includes substrate 31, n type semiconductor layer 32, shines from bottom to top in the present embodiment
Layer 33, p type semiconductor layer 34, transparent conductive layer 35, nano-silver layer 36 and the P electricity to electrically conduct with p type semiconductor layer 34
Pole 37, the N electrode 38 to electrically conduct with n type semiconductor layer 32, the substrate 21 in the present embodiment can be sapphire, Si, SiC,
GaN, ZnO etc., n type semiconductor layer 32 can be N-type GaN etc., and n type semiconductor layer 32 is equipped with N-type semiconductor table top；Luminescent layer
33 can be GaN, InGaN etc.；P type semiconductor layer 34 can be p-type GaN etc.；The thickness of nano-silver layer 36 is preferably 1~
10nm；P electrode 37 is electrically connected by transparent conductive layer 35 and p type semiconductor layer 34, and N electrode 38 is located at N-type semiconductor platform
It is electrically connected on face and with n type semiconductor layer 32.Nano-silver layer 36 in the present embodiment can be effectively reduced transparency conducting layer
Bulk resistor；Meanwhile nano-silver layer 36 is combined with IT0 transparency conducting layer 35, the electric current that can be improved IT0 transparency conducting layer 35 is horizontal
To extended capability, the brightness of LED chip is improved；In addition, the nano-Ag particles in nano-silver layer 36 being capable of effective reflected fluorescent light powder
The light of retroeflection further promotes the brightness of LED chip 3.Further, the present embodiment is led in p type semiconductor layer 34 and transparent
Correspond to 37 lower zone of P electrode between electric layer 35 and is equipped with current barrier layer 39；Passivation is equipped with above transparent conductive layer 35
Layer 40, wherein current barrier layer 39 can be SiO2、Si3N4, SiOxNy etc.；40 material of passivation layer can be SiO2Deng SiO2Tool
There are preferable physics and chemical stability, the structures such as transparent conductive layer and nano-silver layer can be protected.By increasing
Current barrier layer 39 and passivation layer 40, current barrier layer 39 can stop corresponding region transparent conductive layer and p type semiconductor layer
Between electric current, further increase the brightness of LED chip；Passivation layer 40 can be effectively to transparent conductive layer and nano-silver layer
It is protected, improves the stability of LED chip 3.Production when, by bonding technology by metal lead wire connect LED chip 3 with
2 electrode of metal substrate completes electrical connection, then covers chip and contact conductor by epoxy resin or silica gel, forms encapsulation and protects
Shield and optical channel, this encapsulation are all optimal for the design of efficiency of light extraction, heat dissipation performance, increasing working current density.
The embodiments of the present invention are described in conjunction with attached drawing above, but the utility model is not limited to
The specific embodiment stated, the above mentioned embodiment is only schematical, rather than restrictive, this field it is common
Technical staff is not departing from the utility model aims and scope of the claimed protection situation under the enlightenment of the utility model
Under, many forms can be also made, these are belonged within the protection of the utility model.
Claims (6)
1. reeded rack body is opened in a kind of eyeshield LED encapsulation structure, including upper end, which is characterized in that further include being mounted on
Metal substrate in the groove, loaded on the metal substrate central part LED chip, the LED chip is packaged in
Plastic Division on the metal substrate and the reflector plate being oppositely arranged in the Plastic Division and with the LED chip, institute
State reflector plate shape be greater than the LED chip shape and with the LED chip separately, the groove be it is up big and down small
Rotary table connected in star is equipped in the side wall of the groove and increases irreflexive salient point or recess；The LED chip is from bottom to top successively
Including substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer, transparent conductive layer, nano-silver layer and with the p-type half
The P electrode that conductor layer electrically conducts and the N electrode that the n type semiconductor layer electrically conducts.
2. eyeshield LED encapsulation structure according to claim 1, which is characterized in that the nano-silver layer with a thickness of 1-
10nm。
3. eyeshield LED encapsulation structure according to claim 1, which is characterized in that the p type semiconductor layer and transparent
Correspond to P electrode lower zone between conductive layer and is equipped with current barrier layer.
4. eyeshield LED encapsulation structure according to claim 1, which is characterized in that be equipped with above the transparency conducting layer blunt
Change layer.
5. eyeshield LED encapsulation structure according to claim 1, which is characterized in that the reflector plate is embedded in the plastic packaging
In portion.
6. eyeshield LED encapsulation structure according to claim 1, which is characterized in that be equipped at the top of the rack body
Mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920111063.2U CN209561452U (en) | 2019-01-23 | 2019-01-23 | A kind of eyeshield LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920111063.2U CN209561452U (en) | 2019-01-23 | 2019-01-23 | A kind of eyeshield LED encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209561452U true CN209561452U (en) | 2019-10-29 |
Family
ID=68307167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920111063.2U Expired - Fee Related CN209561452U (en) | 2019-01-23 | 2019-01-23 | A kind of eyeshield LED encapsulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209561452U (en) |
-
2019
- 2019-01-23 CN CN201920111063.2U patent/CN209561452U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191029 |