CN209496880U - Transient Suppression Diode - Google Patents

Transient Suppression Diode Download PDF

Info

Publication number
CN209496880U
CN209496880U CN201822222383.3U CN201822222383U CN209496880U CN 209496880 U CN209496880 U CN 209496880U CN 201822222383 U CN201822222383 U CN 201822222383U CN 209496880 U CN209496880 U CN 209496880U
Authority
CN
China
Prior art keywords
tvs chip
tvs
chip
pin
transient suppression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201822222383.3U
Other languages
Chinese (zh)
Inventor
徐谦
庄娟梅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Giantion Optoelectronics Industry Development Co Ltd
Original Assignee
Changzhou Giantion Optoelectronics Industry Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Giantion Optoelectronics Industry Development Co Ltd filed Critical Changzhou Giantion Optoelectronics Industry Development Co Ltd
Priority to CN201822222383.3U priority Critical patent/CN209496880U/en
Application granted granted Critical
Publication of CN209496880U publication Critical patent/CN209496880U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Emergency Protection Circuit Devices (AREA)

Abstract

The utility model discloses a kind of Transient Suppression Diodes, including pin, encapsulating housing and at least one TVS chip, pin and TVS chip weld, a part and TVS chip of pin are located in the encapsulating housing, and the TVS chip, which is equipped with to be looped around around TVS chip welding region, refuses layer.The utility model has the advantages that avoid in welding short-circuit because caused by being spread scolding tin.

Description

Transient Suppression Diode
Technical field
The utility model relates to technical field of semiconductors, a kind of specific Transient Suppression Diode.
Background technique
Transient Suppression Diode (TVS) is a kind of device for protecting sensitive semiconductor, makes sensitive semiconductor from wink A kind of solid-state semiconductor device that state voltage surge destroys, it have that clamp coefficient is small, small in size, response is fast, leakage current is small and High reliability, thus be widely used on voltage transient and carrying out surge protection.Static discharge (ESD) and its His some transient voltages occurred at random in the form of voltage surge, are typically found in various electronic devices, and semiconductor devices Increasingly miniaturization, high density and multi-functional feature, so that electronic device becomes increasingly susceptible to the influence of voltage surge, even Lead to fatal harm.
Existing Transient Suppression Diode includes TVS chip and the pin with the welding of TVS chip, TVS chip and pin After welding, then it is packaged using black glue.However, being in molten state in welding region when welding TVS chip and pin Under scolding tin readily diffused into except the welding region of permission in welding, therefore, scolding tin after diffusion and pad are linked to be one After body, it be easy to cause the short circuit of circuit.
Utility model content
This practical new purpose is to provide a kind of Transient Suppression Diode of avoidable short circuit.
Realize that the technical solution of above-mentioned purpose is as follows:
Transient Suppression Diode, including pin, encapsulating housing and at least one TVS chip, pin and TVS chip weld It connects, a part and TVS chip of pin are located in the encapsulating housing, and the TVS chip, which is equipped with, is looped around the welding of TVS chip Layer is refused around region.
The width for refusing layer is 0.3-0.5mm.
Refuse the edge that layer extends to TVS chip using the edge of welding region as starting point.
The TVS chip be it is multiple, two neighboring TVS chip welding region by welding is attached.
The pin includes weld part and extension, and one end of weld part and one end of extension connect, weld part it is another One end is the free end welded with TVS chip, and weld part is tapered, shape between the circumferential surface of weld part and one end of weld part At angle be 30 to 34 degree.
In the present invention, except thering is scolding tin to be diffused into the welding region of TVS chip it after, refuses layer and plays to make to spread The effect be isolated with the circuit of TVS chip of scolding tin, prevent the scolding tin of diffusion from causing short circuit.Therefore, the utility model ensures Short circuit caused by will not being spread because of scolding tin when welding.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model;
Fig. 2 is the schematic diagram of the pin in the utility model;
Fig. 3 is the schematic diagram of the TVS chip in the utility model.
Specific embodiment
As shown in Figure 1 to Figure 3, the Transient Suppression Diode of this practical new type, including pin 1, encapsulating housing 2 and extremely A few TVS chip 3, pin 1 and TVS chip 2 weld, and a part and TVS chip 2 of pin 1 are located at the encapsulating housing 3 Interior, shell 3 is made using the black glue of environmentally friendly low stress.The TVS chip 2 is equipped with and is looped around 2 welding region of TVS chip Layer 2b is refused around 2a, the width for refusing layer 2b is 0.3-0.5mm, and 0.4mm is selected in the breadth-first for refusing layer 2b.It refuses to weld Layer 2b is to use oxide layer obtained from oxidation processes on the surface of TVS chip 2, when the welding for having scolding tin to be diffused into TVS chip 2 Except the 2a of region and layer 2b is refused in arrival, is refused layer 2b and is played the role of that the scolding tin of diffusion is isolated with the circuit of TVS chip 2, Prevent the scolding tin of diffusion from causing short circuit.Refuse the edge that layer 2b extends to TVS chip 2 using the edge of welding region 2a as starting point.
As shown in Fig. 2, the pin 1 includes weld part 1a and extension 1b, one end of weld part 1a is with extension 1b's The other end of one end 1c connection, weld part 1b is the free end welded with TVS chip 2, and weld part 1b is tapered, weld part The angle α formed between one end 1c of the circumferential surface 1d and weld part 1b of 1b is 30 to 34 degree, and angle α preferentially uses 32 degree, is used The angle α of this shape and 30 to 34 degree, it is possible to reduce scolding tin diffusion avoids causing the short circuit on chip.
As shown in Figure 1, the TVS chip 2 be it is multiple, two neighboring TVS chip 2 welding region 2a by welding carry out Connection.After multiple TVS chips 2 are overlapped, the voltage carrying capacity of Transient Suppression Diode can be promoted, is tested by experiment Card, after multiple TVS chips 2 are superimposed, voltage carrying capacity is up to 1200V.Two TVS chips 2 use chip solid-state welding Tap into capable welding.

Claims (5)

1. Transient Suppression Diode, including pin, encapsulating housing and at least one TVS chip, pin and TVS chip weld, A part and TVS chip of pin are located in the encapsulating housing, which is characterized in that the TVS chip is equipped with and is looped around TVS Layer is refused around chip welding region.
2. Transient Suppression Diode according to claim 1, which is characterized in that the width for refusing layer is 0.3-0.5mm.
3. Transient Suppression Diode according to claim 1, which is characterized in that refusing layer with the edge of welding region is Point extends to the edge of TVS chip.
4. Transient Suppression Diode according to claim 1, which is characterized in that the TVS chip be it is multiple, it is two neighboring TVS chip is attached in welding region by welding.
5. according to claim 1 to Transient Suppression Diode described in one of 4, which is characterized in that the pin includes weld part And extension, one end of weld part and one end of extension connect, the other end of weld part is oneself welded with TVS chip By holding, weld part is tapered, and the angle formed between the circumferential surface of weld part and one end of weld part is 30 to 34 degree.
CN201822222383.3U 2018-12-28 2018-12-28 Transient Suppression Diode Active CN209496880U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201822222383.3U CN209496880U (en) 2018-12-28 2018-12-28 Transient Suppression Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201822222383.3U CN209496880U (en) 2018-12-28 2018-12-28 Transient Suppression Diode

Publications (1)

Publication Number Publication Date
CN209496880U true CN209496880U (en) 2019-10-15

Family

ID=68155007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201822222383.3U Active CN209496880U (en) 2018-12-28 2018-12-28 Transient Suppression Diode

Country Status (1)

Country Link
CN (1) CN209496880U (en)

Similar Documents

Publication Publication Date Title
US9076807B2 (en) Overvoltage protection for multi-chip module and system-in-package
US4896243A (en) Efficient ESD input protection scheme
US8896064B2 (en) Electrostatic discharge protection circuit
CN108054164B (en) Transient voltage suppressor and manufacturing method thereof
US20130334695A1 (en) Electronic device and method of manufacturing such device
JPS5990120A (en) Protective circuit
US10825757B2 (en) Semiconductor device and method with clip arrangement in IC package
CN105552873A (en) Surge protection device
JP2014082922A (en) Semiconductor device
US11444455B2 (en) Integrated circuit protection
TWI782953B (en) Hybrid overvoltage protection device and assembly
CN209496880U (en) Transient Suppression Diode
KR101890981B1 (en) Apparatuses and method for over-voltage event protection
JPS6068721A (en) Ecl circuit
CN107359158B (en) A kind of mixed type Transient Voltage Suppressor
TWI285416B (en) Package structure of bipolar transient voltage suppressor
CN113380786B (en) Thyristor transient voltage suppression protection device structure integrated with reverse conducting diode
US8846453B1 (en) Semiconductor package structure and method of manufacturing the same
CN101192753A (en) Static discharge protection circuit and structure for part charging mode
CN210640240U (en) Electrostatic protection device
TWI467728B (en) Electrostatic discharge (esd) protection element and esd circuit thereof
CN110323189A (en) A kind of stacked combination diode protection module
CN205488143U (en) Diode and transient voltage inhibitor
Li et al. Transient voltage suppressor based on diode-triggered low-voltage silicon controlled rectifier
TW200826277A (en) ESD protection circuit for integrated circuit with negative voltage input terminal

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant