CN209496106U - A kind of MOSFET detection device - Google Patents
A kind of MOSFET detection device Download PDFInfo
- Publication number
- CN209496106U CN209496106U CN201822279263.7U CN201822279263U CN209496106U CN 209496106 U CN209496106 U CN 209496106U CN 201822279263 U CN201822279263 U CN 201822279263U CN 209496106 U CN209496106 U CN 209496106U
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- mosfet
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- detection
- resistance
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Abstract
The utility model discloses a kind of MOSFET detection device, including wiring board, main control circuit in the circuit board is set and is arranged in parallel the detection circuit on main control circuit；The main control circuit includes power supply, the power switch of control power supply conducting and the driving switch of control detection circuit conducting；The detection circuit includes the driving resistance connected and be connected to MOSFET grid circuit on main control circuit, it connects with MOSFET drain circuit and is connected to the current regulating resistance on main control circuit and is connected to the voltage adjusting resistance of ground terminal after connecting with MOSFET source circuit, the voltage adjusts resistor in parallel and is provided with sensing device.The utility model structure is simple, easy to operate, and detection effect is good, high-efficient, can be widely applied to MOSFET detection field.
Description
Technical field
The utility model relates to vehicle switch fields, more particularly, to a kind of MOSFET detection device.
Background technique
The detection of traditional test MOSFET is detected using multimeter, and operating method is that multimeter is placed in two poles
After pipe on-off shelves, there is 1 point of a few volt voltage between test pencil, red test pencil is positive, and black meter pen is negative, when black meter pen meets S, and red test pencil meets G,
It is equivalent to 1 point of a few volt voltage and gives G-S capacitor charging, since impedance is very high between metal-oxide-semiconductor G-S, insulator is equivalent to, so G-S
The charge of capacitor storage will not disappear at once.In addition the cut-in voltage of metal-oxide-semiconductor is very low, only several volts of zero point, so measuring at this time
On state just shows and turns between D-S.If red test pencil meets D, black meter pen meets G, then is equivalent to and applies backward voltage to the pole G,
Just end between D-S.N-channel pipe: digital multimeter is placed in diode on-off shelves, and black meter pen connects that S is extremely motionless, and red test pencil touches one
The pole lower G, then connects the pole D again, at this time should be on state；Then it is extremely motionless to meet D for red test pencil, and black meter pen touches that the pole G is again
The contact pole S is returned to, it at this time should be obstructed.P-channel pipe: method is as detection N-channel pipe, and only red-black test pencil is exchanged
, because both N-MOS pipe and P-MOS pipe polarity are exactly the opposite.There are detecting step troublesome operation is low for this method；Detection effect
Rate is low and detects the problem of quality inaccuracy.
Utility model content
The purpose of the utility model is to provide a kind of MOSFET detection devices, solve existing MOSFET detection inconvenience, effect
The low problem of rate.
The technical scheme adopted by the utility model to solve the technical problem is as follows: a kind of MOSFET detection device, including line
Road plate is arranged main control circuit in the circuit board and is arranged in parallel the detection circuit on main control circuit；
The main control circuit includes power supply, the power switch of control power supply conducting and the driving of control detection circuit conducting
Switch；
The detection circuit includes the driving resistance connected and be connected to MOSFET grid circuit on main control circuit, with
After MOSFET drain circuit connects and is connected to the current regulating resistance on main control circuit and connects with MOSFET source circuit
The voltage for being connected to ground terminal adjusts resistance, and the voltage adjusts resistor in parallel and is provided with sensing device.
For the electricity for eliminating MOSFET grid source electrode parasitic capacitance, next use is facilitated to mislead, the MOSFET grid connects
It connects circuit and ground terminal is additionally provided with dead resistance.
Preferably, the sensing device is LED light or buzzer.
For convenience of the installation of MOSFET, one group of clamping terminal for facilitating MOSFET to install, institute are provided on the wiring board
Stating clamping terminal is cylindrical structure, and arranged symmetrically on the side wall of clamping terminal there are two the metal clips to concave.
The utility model has the beneficial effects that the utility model detects MOSFET by the way that special route is arranged, greatly
The efficiency of detection, and high reliablity are improved greatly, it is easy to operate, it is at low cost.The dead resistance can consume MOSFET's
The charge of grid source electrode parasitic capacitance, will not be to causing to mislead under MOSFET when task.The clamping terminal structure, it is convenient
The plug of MOSFET, to improve the efficiency of detection.
Below with reference to drawings and examples, the utility model is described in detail.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the circuit diagram of the utility model.
Specific embodiment
Embodiment, as shown in Figure 1 and Figure 2, a kind of MOSFET detection device, for detecting the quality of MOSFET, including route
Plate 1, the main control circuit being arranged in assist side 1 and one group of detection circuit being arranged in parallel on main control circuit.
The main control circuit includes power supply VCC, and the power switch S1 and control detection circuit of control power supply VCC conducting are led
Logical driving switch S2.
The detection circuit includes the driving resistance R1 for connecting and being connected to MOSFET grid circuit on main control circuit,
Connect with MOSFET drain circuit and be connected to the current regulating resistance R2 on main control circuit and with MOSFET source circuit string
The voltage that ground terminal is connected to after connection adjusts resistance R4, and the voltage adjusts and has been arranged in parallel sensing device 2 on resistance R4.It is described
Sensing device 2 selects excellent for LED light or buzzer.The MOSFET grid connection circuit and ground terminal are additionally provided with dead resistance
R3。
For convenience of installation, it is provided with one group of clamping terminal 3 for facilitating MOSFET to install on the wiring board 1, is clamped terminal 3
Bottom be welded and fixed in assist side 1, clamping terminal 3 be cylindrical structure, clamping terminal 3 center have MOSFET installation
Hole is symmetrical arranged there are two the metal clips 301 to concave on the side wall of clamping terminal 3, will by two metal clips 301
MOSFET is fixed.
When detection, after MOSFET is installed in place, S1 is turned on the power switch, after power supply electrifying, then open driving switch S2,
12V driving voltage 4 is by driving resistance R1, to the gate drive signal of MOSFET, the drain electrode of MOSFET and source conduction at this time,
Power supply VCC adjusts resistance R4 by current regulating resistance R2 and voltage and gives the power supply of LED Light-emitting diode LED, by adjusting R2 and
The resistance value of R4 adjusts the voltage and current by Light-emitting diode LED；If Light-emitting diode LED is bright, prove to test
MOSFET be it is good, be then shut off driving switch S2, Light-emitting diode LED is gone out, while the grid source electrode parasitic capacitance of MOSFET
Charge consumed by dead resistance R3, will not finally turn off the switch S1 to causing to mislead when task under MOSFET, under
Electricity.
The utility model is exemplarily described in conjunction with attached drawing above.Obviously, the utility model implements not
It is limited by aforesaid way.As long as the various unsubstantialities that the method concept and technical solution that use the utility model carry out
Improvement；Or it is not improved, the above-mentioned conception and technical scheme of the utility model are directly applied into other occasions, at this
Within the protection scope of utility model.
Claims (4)
1. a kind of MOSFET detection device, it is characterised in that: including wiring board (1), the main control electricity on assist side (1) is arranged
Road and it is arranged in parallel the detection circuit on main control circuit；
The main control circuit includes power supply (VCC), the power switch (S1) and control detection circuit of control power supply (VCC) conducting
The driving switch (S2) of conducting, with power supply (VCC) concatenated driving voltage (4)；
The detection circuit includes the driving resistance (R1) connected and be connected to MOSFET grid circuit on main control circuit, with
MOSFET drain circuit connect and be connected to the current regulating resistance on main control circuit (R2) and with MOSFET source circuit string
The voltage that ground terminal is connected to after connection adjusts resistance (R4), and the voltage adjusts and has been arranged in parallel sensing device on resistance (R4)
(2)。
2. MOSFET detection device as described in claim 1, it is characterised in that: the MOSFET grid connection circuit and ground connection
End is additionally provided with the resistance (R3) of consumption grid source electrode parasitic capacitance electricity.
3. MOSFET detection device as described in claim 1, it is characterised in that: the sensing device (2) is LED light or bee
Ring device.
4. the MOSFET detection device as described in claims 1 to 3 any one, it is characterised in that: set on the wiring board (1)
It is equipped with one group of clamping terminal (3) for facilitating MOSFET to install, the clamping terminal (3) is cylindrical structure, in clamping terminal (3)
Side wall on be symmetrical arranged that there are two the metal clips (301) that concave.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822279263.7U CN209496106U (en) | 2018-12-30 | 2018-12-30 | A kind of MOSFET detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822279263.7U CN209496106U (en) | 2018-12-30 | 2018-12-30 | A kind of MOSFET detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209496106U true CN209496106U (en) | 2019-10-15 |
Family
ID=68154534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822279263.7U Active CN209496106U (en) | 2018-12-30 | 2018-12-30 | A kind of MOSFET detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209496106U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113933674A (en) * | 2021-10-09 | 2022-01-14 | 富芯微电子有限公司 | MOSFET state monitoring device |
-
2018
- 2018-12-30 CN CN201822279263.7U patent/CN209496106U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113933674A (en) * | 2021-10-09 | 2022-01-14 | 富芯微电子有限公司 | MOSFET state monitoring device |
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