CN113933674A - MOSFET state monitoring device - Google Patents
MOSFET state monitoring device Download PDFInfo
- Publication number
- CN113933674A CN113933674A CN202111174330.9A CN202111174330A CN113933674A CN 113933674 A CN113933674 A CN 113933674A CN 202111174330 A CN202111174330 A CN 202111174330A CN 113933674 A CN113933674 A CN 113933674A
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- resistor
- mosfet
- current
- monitoring device
- detection chip
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- 238000012806 monitoring device Methods 0.000 title claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 38
- 238000005070 sampling Methods 0.000 claims abstract description 21
- 238000012544 monitoring process Methods 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 7
- 238000004891 communication Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 abstract description 2
- 230000000007 visual effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J13/00—Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
- H02J13/00002—Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network characterised by monitoring
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J13/00—Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
- H02J13/00006—Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network characterised by information or instructions transport means between the monitoring, controlling or managing units and monitored, controlled or operated power network element or electrical equipment
- H02J13/00022—Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the network; Circuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network characterised by information or instructions transport means between the monitoring, controlling or managing units and monitored, controlled or operated power network element or electrical equipment using wireless data transmission
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02B90/20—Smart grids as enabling technology in buildings sector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S40/00—Systems for electrical power generation, transmission, distribution or end-user application management characterised by the use of communication or information technologies, or communication or information technology specific aspects supporting them
- Y04S40/12—Systems for electrical power generation, transmission, distribution or end-user application management characterised by the use of communication or information technologies, or communication or information technology specific aspects supporting them characterised by data transport means between the monitoring, controlling or managing units and monitored, controlled or operated electrical equipment
- Y04S40/126—Systems for electrical power generation, transmission, distribution or end-user application management characterised by the use of communication or information technologies, or communication or information technology specific aspects supporting them characterised by data transport means between the monitoring, controlling or managing units and monitored, controlled or operated electrical equipment using wireless data transmission
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
Abstract
The invention belongs to the technical field of MOSFET monitoring, and particularly relates to a MOSFET state monitoring device which comprises an MOS tube, an MOSFET driving circuit, a variable resistor, a current-limiting resistor, an LED, a sampling resistor, a capacitor and an MCU detection chip, wherein the drain electrode of the MOS tube is connected with the current-limiting resistor in series and the LED in connection with working voltage, the MOSFET driving circuit is connected with the grid electrode of the MOS tube through the variable resistor, and the source electrode of the MOS tube is grounded after being connected with the sampling resistor in series. The resistance value of the variable resistor is changed by using the resistance box, the variable resistor is converted into the high-resistance resistor, the potential of the grid electrode of the MOS tube is increased, the MOS tube is conducted to enable the LED to emit light so as to test the MOS tube state, meanwhile, the MCU detection chip is used for detecting the current flowing through the sampling resistor in a mode of collecting the voltage of the sampling resistor, and the visual detection mode and the current detection mode are integrated, so that the reliability is higher by combining the detection results of the two modes.
Description
Technical Field
The invention relates to the technical field of MOSFET monitoring, in particular to a MOSFET state monitoring device.
Background
At present, as a switching tube which is more and more widely used, an MOS tube has the advantages of high speed, high performance and low loss, and in actual work, according to the difference between a working environment and a circuit where the MOS tube is located, the MOS tube is over-temperature or over-current, and the working efficiency and the service life of the MOS tube are affected to a certain extent.
The existing method for monitoring the MOS tube state not only needs a complex detection circuit, but also has long detection time, low efficiency, increased user time cost and low reliability, and can not judge the state of the MOSFET intuitively and quickly.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a MOSFET state monitoring device, which solves the problems that the existing method for monitoring the MOS tube state not only needs a complex detection circuit, but also has longer detection time and low efficiency, causes the increase of user time cost, has lower reliability and can not intuitively and quickly judge the state of the MOSFET.
The second technical proposal.
The invention specifically adopts the following technical scheme for realizing the purpose:
the utility model provides a MOSFET state monitoring devices, includes MOS pipe, MOSFET drive circuit, variable resistance, current-limiting resistor, LED, sampling resistor, electric capacity and MCU detection chip, the drain electrode series connection current-limiting resistor and the LED of MOS pipe connect operating voltage, MOSFET drive circuit passes through the variable resistance and is connected with the grid of MOS pipe, ground connection behind the source electrode series connection sampling resistor of MOS pipe makes variable resistance turn into high resistance through the resistance box change resistance, risees the potential of MOS pipe grid, and the MOS pipe leads to makes LED luminous with this test MOS tubulose attitude, sampling resistor's both ends and MCU detection chip's both ends are connected, MCU detection chip's both ends are connected with the both ends of electric capacity respectively, MCU detection chip detects the electric current of flow through sampling resistor through the mode of the voltage of gathering sampling resistor.
Further, the current limiting resistor is a quarter resistor.
Further, MOSFET state monitoring device still includes wireless communication module, wireless communication module and MCU detect chip electric connection, wireless communication module is used for detecting current data transmission for remote monitoring platform.
Furthermore, a first rectifying diode and a second rectifying diode which are arranged in a reverse direction are serially arranged at two detection ends of the MCU detection chip.
(III) advantageous effects
Compared with the prior art, the invention provides a MOSFET state monitoring device, which has the following beneficial effects:
according to the invention, the resistance value of the variable resistor is changed by using the resistor box, so that the variable resistor is converted into the high-resistance resistor, the potential of the grid electrode of the MOS tube is increased, the MOS tube is conducted to enable the LED to emit light so as to test the MOS tube state, meanwhile, the MCU detection chip is used for detecting the current flowing through the sampling resistor in a mode of collecting the voltage of the sampling resistor, and the two MOSFET state monitoring modes of an intuitive detection mode and a current detection mode are integrated, and the reliability is higher by combining the detection results of the two modes.
Drawings
Fig. 1 is a schematic diagram of a MOSFET state monitoring device of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
As shown in fig. 1, a MOSFET state monitoring device according to an embodiment of the present invention includes an MOS transistor, a MOSFET driving circuit, a variable resistor, a current-limiting resistor, an LED, a sampling resistor R, a capacitor, and an MCU detection chip, wherein a drain of the MOS transistor is connected in series to the current-limiting resistor and the LED to connect to a working voltage, the MOSFET driving circuit is connected to a gate of the MOS transistor through the variable resistor, a source of the MOS transistor is connected in series to the sampling resistor and then grounded, and a resistance of the variable resistor is changed through a resistor box, so that the variable resistor is converted into a high-resistance resistor, and a potential of the gate of the MOS transistor is raised, and the MOS transistor is turned on to make the LED emit light to test a MOS tubular state, and the testing method has characteristics of fast response speed and more intuitive performance, and is simple in circuit structure and more practical; the both ends of sampling resistor are connected with MCU detection chip's both ends sense terminal, MCU detection chip's both ends sense terminal is connected with the both ends of electric capacity respectively, MCU detection chip detects the electric current of flow through sampling resistor through the mode of gathering sampling resistor's voltage to this state monitoring that realizes MOSFET collects two kinds of MOSFET state monitoring modes of visual detection mode and current detection in an organic whole, combines the testing result of two kinds of modes, and the reliability is higher.
In some embodiments, the current limiting resistor is a quarter resistor.
In some embodiments, the MOSFET state monitoring device further comprises a wireless communication module, the wireless communication module is electrically connected with the MCU detection chip, and the wireless communication module is configured to transmit the current detection data to the remote monitoring platform, so as to realize remote monitoring of the MOSFET state by setting the wireless communication module.
In some embodiments, a first rectifying diode and a second rectifying diode which are arranged in reverse directions are arranged in series on two detection ends of the MCU detection chip, and the arrangement of the first rectifying diode and the second rectifying diode mainly plays a role of a rectifying and voltage-stabilizing MCU detection circuit.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A MOSFET state monitoring device, characterized by: including MOS pipe, MOSFET drive circuit, variable resistance, current-limiting resistor, LED, sampling resistor, electric capacity and MCU detection chip, operating voltage is connected to the drain electrode series connection current-limiting resistor and the LED of MOS pipe, MOSFET drive circuit passes through the variable resistance and is connected with the grid of MOS pipe, ground connection behind the source electrode series connection sampling resistor of MOS pipe changes variable resistance through the resistance box, makes variable resistance turn into high resistance, risees the potential of MOS pipe grid, and the MOS pipe leads to makes LED luminous with this test MOS tubulose state, sampling resistor's both ends and MCU detection chip's both ends are connected, MCU detection chip's both ends are connected with the both ends of electric capacity respectively, MCU detection chip detects the electric current of flow through sampling resistor through the mode of gathering sampling resistor's voltage.
2. A MOSFET state monitoring device according to claim 1, characterized in that: the current limiting resistor is a quarter resistor.
3. A MOSFET state monitoring device according to claim 1, characterized in that: the MOSFET state monitoring device further comprises a wireless communication module, the wireless communication module is electrically connected with the MCU detection chip, and the wireless communication module is used for transmitting current detection data to the remote monitoring platform.
4. A MOSFET state monitoring device according to claim 1, characterized in that: and a first rectifier diode and a second rectifier diode which are arranged in a reverse direction are serially arranged at the two detection ends of the MCU detection chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111174330.9A CN113933674A (en) | 2021-10-09 | 2021-10-09 | MOSFET state monitoring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111174330.9A CN113933674A (en) | 2021-10-09 | 2021-10-09 | MOSFET state monitoring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113933674A true CN113933674A (en) | 2022-01-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111174330.9A Pending CN113933674A (en) | 2021-10-09 | 2021-10-09 | MOSFET state monitoring device |
Country Status (1)
| Country | Link |
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| CN (1) | CN113933674A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115754656A (en) * | 2022-11-23 | 2023-03-07 | 东莞光亚智能科技有限公司 | Field effect tube damage detection system |
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|---|---|---|---|---|
| CN201611352U (en) * | 2009-12-30 | 2010-10-20 | 比亚迪股份有限公司 | Test circuit for MOSFET |
| CN103376384A (en) * | 2012-04-27 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Mosfet short circuit testing device |
| CN104597386A (en) * | 2014-12-25 | 2015-05-06 | 余姚亿威电子科技有限公司 | Connecting/disconnecting characteristics testing method of MOS (Metal Oxide Semiconductor) pipe IRF1607 |
| CN108336715A (en) * | 2017-12-21 | 2018-07-27 | 长沙拓扑陆川新材料科技有限公司 | A kind of current foldback circuit |
| CN207965047U (en) * | 2018-01-25 | 2018-10-12 | 北京智行鸿远汽车有限公司 | Metal-oxide-semiconductor Working state checking circuit |
| CN209496106U (en) * | 2018-12-30 | 2019-10-15 | 昌辉汽车转向系统（黄山）有限公司 | A kind of MOSFET detection device |
| CN211180105U (en) * | 2019-10-09 | 2020-08-04 | 湖北尚纬新能源技术有限公司 | MOS tube switch state detection device and battery management system with same |
-
2021
- 2021-10-09 CN CN202111174330.9A patent/CN113933674A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201611352U (en) * | 2009-12-30 | 2010-10-20 | 比亚迪股份有限公司 | Test circuit for MOSFET |
| CN103376384A (en) * | 2012-04-27 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Mosfet short circuit testing device |
| CN104597386A (en) * | 2014-12-25 | 2015-05-06 | 余姚亿威电子科技有限公司 | Connecting/disconnecting characteristics testing method of MOS (Metal Oxide Semiconductor) pipe IRF1607 |
| CN108336715A (en) * | 2017-12-21 | 2018-07-27 | 长沙拓扑陆川新材料科技有限公司 | A kind of current foldback circuit |
| CN207965047U (en) * | 2018-01-25 | 2018-10-12 | 北京智行鸿远汽车有限公司 | Metal-oxide-semiconductor Working state checking circuit |
| CN209496106U (en) * | 2018-12-30 | 2019-10-15 | 昌辉汽车转向系统（黄山）有限公司 | A kind of MOSFET detection device |
| CN211180105U (en) * | 2019-10-09 | 2020-08-04 | 湖北尚纬新能源技术有限公司 | MOS tube switch state detection device and battery management system with same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115754656A (en) * | 2022-11-23 | 2023-03-07 | 东莞光亚智能科技有限公司 | Field effect tube damage detection system |
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