CN209418531U - A kind of LED wafer of preventing laser cutting damage - Google Patents
A kind of LED wafer of preventing laser cutting damage Download PDFInfo
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- CN209418531U CN209418531U CN201920038528.6U CN201920038528U CN209418531U CN 209418531 U CN209418531 U CN 209418531U CN 201920038528 U CN201920038528 U CN 201920038528U CN 209418531 U CN209418531 U CN 209418531U
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- cutting road
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- 238000003698 laser cutting Methods 0.000 title claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 88
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 118
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 239000011241 protective layer Substances 0.000 claims description 27
- 229910052681 coesite Inorganic materials 0.000 claims description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims description 19
- 229910052682 stishovite Inorganic materials 0.000 claims description 19
- 229910052905 tridymite Inorganic materials 0.000 claims description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 229910052593 corundum Inorganic materials 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 abstract description 31
- 229910002601 GaN Inorganic materials 0.000 abstract description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 12
- 239000007771 core particle Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The utility model discloses a kind of LED wafers of preventing laser cutting damage, including substrate, the light emitting structure of multiple settings on substrate, the light emitting structure includes the first semiconductor layer set gradually, active layer, second semiconductor layer, transparency conducting layer, the first electrode being connect with the first semiconductor layer, and the second electrode being connect with transparency conducting layer, Cutting Road between adjacent light emitting structure, the Cutting Road is etched to the first semiconductor layer from transparency conducting layer, positioned at the etch areas of light emitting structure edge, the etching depth of the etch areas is greater than the etching depth of Cutting Road, and run through the first semiconductor layer.The utility model performs etching the corner of light emitting structure, forms the etch areas for running through the first semiconductor layer, removes the unnecessary gallium nitride layer of Cutting Road infall, is burnt to avoid light emitting structure, improve the yield of LED chip.
Description
Technical field
The utility model relates to LED technology field more particularly to a kind of LED wafers of preventing laser cutting damage.
Background technique
LED (Light Emitting Diode, light emitting diode) be it is a kind of using Carrier recombination when release energy shape
At luminous semiconductor devices, LED chip is with power consumption is low, coloration is pure, the service life is long, small in size, the response time is fast, energy conservation and environmental protection
Equal many advantages.
In the processing procedure of LED chip, it is a ring important in processing procedure that LED wafer, which is cut into single LED core particles,.LED core
The cutting mode of piece from conventional diamond knife cut, be gradually evolved to 365nm, 295nm ultraviolet laser cutting, up to now before most
The infrared stealthy cutting of new 890nm, 1020nm, existing cutting mode all cause certain damage to chip to meeting.
Since existing cutting mode needs to carry out cross-cut, i.e., laser is drawn along X-axis split LED wafer after, then draw along Y-axis
LED wafer is split, LED wafer is cut into single core particles.As shown in Figure 1, the infall of LED wafer X-axis and Y-axis, due to energy
Amount repeats to be sintered, and will increase the burn surface area of LED wafer, so that the GaN at this is cracked into Ga and N, and lead with the GaN of burn formation
Electrical connection, so that LED chip be caused to leak electricity, aging is burnt.
Summary of the invention
Technical problem to be solved by the utility model is to provide a kind of LED wafers of preventing laser cutting damage, remove
Partial nitridation gallium at cross-cut avoids burn caused by laser cutting, prevents chip from leaking electricity, and improves aging yield.
In order to solve the above-mentioned technical problem, the utility model provides a kind of LED wafer of preventing laser cutting damage, packet
It includes:
Substrate；
The light emitting structure of multiple settings on substrate, the light emitting structure include the first semiconductor layer set gradually, have
Active layer, the second semiconductor layer, transparency conducting layer, the first electrode being connect with the first semiconductor layer and with transparency conducting layer connect
The second electrode connect；
Cutting Road between adjacent light emitting structure, the Cutting Road are etched to the first semiconductor layer from transparency conducting layer；
Positioned at the etch areas of light emitting structure edge, the etching that the etching depth of the etch areas is greater than Cutting Road is deep
Degree, and run through the first semiconductor layer.
As an improvement of the above scheme, the surface of the etch areas is covered with layer of transparent protective layer, the transparent guarantor
Sheath is single or multi-layer structure.
As an improvement of the above scheme, the structure of the transparent protective layer is SiO2/Ti2O、SiO2/Ti2O/Al2O3、
Al2O3/SiN/SiO2/Ti2O、Ti2O/Al2O3/ SiN or SiN/SiO2/Al2O3, the transparent protective layer reflection wavelength is 290-
The laser of 1100nm.
As an improvement of the above scheme, the etch areas is etched to substrate surface, the etched area from transparency conducting layer
The etching depth in domain is 1.5-10 μm.
As an improvement of the above scheme, the area of the etch areas is 100-900 μm2。
As an improvement of the above scheme, the Cutting Road includes X-axis Cutting Road and Y-axis Cutting Road, the X-axis Cutting Road with
Y-axis Cutting Road is mutually perpendicular to, and the etch areas is located at the infall of X-axis Cutting Road and Y-axis Cutting Road.
As an improvement of the above scheme, the width of the Cutting Road is 16-30 μm.
As an improvement of the above scheme, the etching depth of the Cutting Road is 1-1.5 μm.
Implement the utility model, has the following beneficial effects:
1, the utility model performs etching the corner of light emitting structure, forms the etch areas for running through the first semiconductor layer,
The unnecessary gallium nitride layer for removing X-axis Cutting Road and Y-axis Cutting Road infall, is burnt to avoid light emitting structure, improves LED
The yield of chip.
2, the utility model is further defined the etching depth of etch areas and area, is avoiding light emitting structure quilt
Chip brightness and yield are improved while burn to the greatest extent.
3, the utility model is defined by the depth and width to Cutting Road, and laser facula burn is effectively avoided to shine
Structure, guarantees brightness and the yield of chip, while the balance taken in number of chips and yield, and then reduces and be produced into
This.
Detailed description of the invention
Fig. 1 is that existing LED wafer is cut by laser staggered schematic diagram；
Fig. 2 is the schematic top plan view of the utility model LED wafer；
Fig. 3 is the structural schematic diagram of the utility model LED wafer；
Fig. 4 is the stereoscopic schematic diagram of the utility model LED wafer.
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type is described in further detail.
Referring to fig. 2 to Fig. 4, a kind of LED wafer of preventing laser cutting damage provided by the utility model, including substrate 10,
Multiple light emitting structures 20, Cutting Road 30 and etch areas 40.
Specifically, multiple light emitting structures 20 are arranged on substrate 10 according to arrangement mode in length and breadth.The light emitting structure 20
Including set gradually the first semiconductor layer 21, active layer 22, the second semiconductor layer 23, transparency conducting layer 24, lead with the first half
The first electrode 25 that body layer 21 connects and the second electrode 26 being connect with transparency conducting layer 24.It should be noted that the hair
Photo structure 20 further includes exposed region 27, and the exposed region 27 is etched to the first semiconductor layer 21, institute from transparency conducting layer 24
First electrode 25 is stated to be arranged on the first semiconductor layer 21 of exposed region 27.In addition, in the other embodiments of the utility model
In, the laminated construction such as buffer layer are additionally provided between the substrate 10 and light emitting structure 20.
Wherein, the material of the utility model substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductors
Material.Preferably, the substrate 10 of the utility model is Sapphire Substrate.
In addition, the first semiconductor layer 21 provided by the utility model is n type gallium nitride base, the second semiconductor layer 23 is P
Type gallium nitride based layer, active layer 22 are MQW quantum well layer.
Secondly, the material of the utility model transparency conducting layer 24 is indium tin oxide, but not limited to this.In indium tin oxide
The ratio of indium and tin is 70-99:1-30.Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.It is advantageous in this way to improve thoroughly
The conductive capability of bright conductive layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
The Cutting Road 30 is between adjacent light emitting structure 20.Specifically, the Cutting Road 30 is from transparency conducting layer 24
It is etched to the first semiconductor layer 21.Wherein, the Cutting Road 30 includes X-axis Cutting Road 31 and Y-axis Cutting Road 32, and the X-axis is cut
It cuts 31 to be mutually perpendicular to Y-axis Cutting Road 32, the etch areas 40 is located at the infall of X-axis Cutting Road and Y-axis Cutting Road.
Since laser needs to be cut along Cutting Road 30, LED wafer could form single core particles, wherein laser light
The diameter of spot is generally 5-8 μm, in order to guarantee to cut yield, avoids the edge of laser burn light emitting structure, the Cutting Road 30
Width be 6-30 μm.The laser offset as caused by laser equipment and epitaxial warping is generally 3 μm, in addition, laser splitting lining
Oblique segmentation can occur when bottom, in order to prevent oblique segmentation to light emitting region, it is preferred that the width of the Cutting Road 30 is 10-30 μm.If cutting
The width for cutting 30 is greater than 30 μm, then light-emitting area is reduced, and the identical size light emitting structure quantity in identical size LED wafer subtracts
It is few, to increase production cost.
In order to enable laser to cleave wafer, single core particles are formed, the utility model limits the depth of Cutting Road 30
It is fixed, wherein the Cutting Road 30 is etched from transparency conducting layer 24 in the first semiconductor layer 21.Preferably, the Cutting Road 30
Etching depth is 1-1.5 μm.Since the Cutting Road of the utility model is using ICP (inductively coupled plasma body) or RIE (reaction
Ion etching) technique formation, if the etching depth of Cutting Road 30 is less than 1 μm, etching depth is inadequate, subsequent to be difficult to using sharp
Light cuts wafer.If the etching depth of Cutting Road 30 is greater than 1.5 μm, LED wafer is easy to happen fragmentation, it is difficult to be formed
Complete core particles reduce the yield of LED chip.
The etch areas 40 is located at the edge of light emitting structure 20, specifically, from the transparent of 20 edge of light emitting structure
Conductive layer 24 performs etching, and the etching depth of the etch areas 40 is greater than the etching depth of Cutting Road 30, and through the first half
Conductor layer 21.
Since laser is overlapped weight occurs for the light emitting structure of 32 infall of X-axis Cutting Road 31 and Y-axis Cutting Road in order to prevent
Resintering knot, the utility model perform etching the corner of light emitting structure 20, to form the etch areas 40.It needs to illustrate
It is that the edge of the light emitting structure 20 is the infall of X-axis Cutting Road 31 and Y-axis Cutting Road 32.In order to avoid gallium nitride layer
It is repeated sintering and is cracked into Ga and N, the utility model removes X-axis Cutting Road 31 and Y-axis Cutting Road by the way of deep etching
The unnecessary gallium nitride layer of 32 infalls improves the yield of LED chip so that light emitting structure be avoided to be burnt.
The etching depth of etch areas 40 plays important influence to the yield of LED chip, due to preventing LED chip from burning
Focus on remove can be conductive the first semiconductor layer 21, therefore etch areas 40 must remove the first semiconductor layer 21.
It is described in order to further prevent chip to burn due to being additionally provided with the laminations such as buffer layer between the first semiconductor layer 21 and substrate 10
Etch areas 40 is etched to 10 surface of substrate from transparency conducting layer 24.Preferably, the etching depth of the etch areas is 1.5-
10μm.Within the above range, the deeper etching depth the better.If the etching depth of etch areas 40 is greater than 10 μm, it is etched to lining
The inside at bottom 10, then LED wafer is easy to happen fragmentation, it is difficult to form complete core particles, reduce the yield of LED chip.
Wherein, the area of etch areas 40 also plays important influence to the yield of LED chip and brightness.Due to laser light
The diameter of spot is generally 5-8 μm, therefore the area of the etch areas 40 of the utility model needs the area greater than hot spot, preferably
, the area of the etch areas 40 is 100-900 μm2.If the area of etch areas 40 is greater than 900 μm2, then light emitting structure 20
Etching area it is excessive, to reduce the area of light emitting structure 20, and then reduce chip brightness.
It should be noted that the shape of the etch areas 40 is semicircle, rectangle or polygon, but not limited to this.
In order to further prevent light emitting structure to be burnt, the yield of LED chip is improved, the surface of the etch areas 40 is covered
It is stamped layer of transparent protective layer (not shown), the transparent protective layer is single or multi-layer structure, the transparent protective layer
By SiO2、Ti2O、Al2O3It is made with one or more of SiN.Preferably, the structure of the transparent protective layer is SiO2/
Ti2O、SiO2/Ti2O/Al2O3、Al2O3/SiN/SiO2/Ti2O、Ti2O/Al2O3/ SiN or SiN/SiO2/Al2O3。
Since transparent protective layer of the invention uses above structure, transparent protective layer of the invention can not only be protected
Etch areas is protected, prevents the exposed gallium nitride layer of etch areas to be sintered, can also prevent chip from leaking electricity.Further, since
Transparent protective layer of the invention is made of the material of different refractivity, can be the laser of 290-1100nm with reflection wavelength, will
Laser is reflected at etch areas, and the exposed gallium nitride layer of etch areas is further prevented to be sintered.Preferably, described
Transparent protective layer with a thickness of 100-10000nm.If the thickness of transparent protective layer is less than 100nm, reflectivity is low, and thickness is thin,
Protection is not played；If the thickness of transparent protective layer is greater than 10000nm, influences light emitting structure and go out light.
Correspondingly, the utility model additionally provides a kind of production method of the LED wafer of preventing laser cutting damage, including with
Lower step:
S101, epitaxial layer and transparency conducting layer is formed on the substrate；
Specifically, the epitaxial layer includes the first semiconductor layer, active layer and the second semiconductor being sequentially arranged on substrate
Layer, the transparency conducting layer are arranged on the second semiconductor layer.
The material of the utility model substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductor materials.
Preferably, the substrate 10 of the utility model is Sapphire Substrate.
Epitaxial layer is formed on 10 surface of substrate using MOCVD device, the epitaxial layer includes first on substrate 10
Semiconductor layer 21, the active layer 22 on the first semiconductor layer 21 and the second semiconductor layer 23 on active layer 22.
Specifically, the first semiconductor layer 21 provided by the utility model is n type gallium nitride base, the second semiconductor layer 23 is
P-type gallium nitride based layer, active layer 22 are MQW quantum well layer.
It should be noted that in the other embodiments of the application, the substrate 10 and first semiconductor layer 21 it
Between be equipped with caching rush the laminations such as layer.
Layer of transparent conductive layer 24 is formed on the second semiconductor layer 23.The material of the utility model transparency conducting layer 24 is
Indium tin oxide, but not limited to this.The ratio of indium and tin is 70-99:1-30 in indium tin oxide.Preferably, indium tin oxide
The ratio of middle indium and tin is 95:5.The conductive capability for favorably improving transparency conducting layer in this way, prevents carrier from flocking together, also
Improve the light extraction efficiency of chip.
S102, transparency conducting layer and epitaxial layer are performed etching, is etched to the first semiconductor layer, form Cutting Road, exposed
Region and multiple luminous micro-structures, the Cutting Road is between adjacent luminous micro-structure；
Specifically, doing exposure mask using photoresist, while 24 epitaxial layer of transparency conducting layer is carved using ICP etching technics
Erosion forms through transparency conducting layer 24, the second semiconductor layer 23 and active layer 22 and extends to the exposed of the first semiconductor layer 21
Region 27.
Exposure mask is done using photoresist, while using ICP or RIE etching technics, transparency conducting layer 24 and epitaxial layer are carried out
Horizontal and vertical etching forms Cutting Road 30.The Cutting Road 30 divides transparency conducting layer and epitaxial layer to form multiple shine
Micro-structure.
The Cutting Road 30 is etched to the first semiconductor layer 21 from transparency conducting layer 24.Wherein, the Cutting Road 30 includes X
Axis Cutting Road 31 and Y-axis Cutting Road 32, the X-axis Cutting Road 31 are mutually perpendicular to Y-axis Cutting Road 32, the etch areas 40
In the infall of X-axis Cutting Road and Y-axis Cutting Road.Since laser needs to be cut along Cutting Road 30, LED wafer could shape
At single core particles, wherein the diameter of laser facula is generally 5-8 μm, in order to guarantee to cut yield, avoids laser burn from shining micro-
The edge of structure, the width of the Cutting Road 30 are 6-30 μm.The laser offset one as caused by laser equipment and epitaxial warping
As be 3 μm, in addition, when cleaving substrate oblique segmentation can occur for laser, oblique segmentation to light emitting region in order to prevent, it is preferred that the cutting
The width in road 30 is 10-30 μm.If the width of Cutting Road 30 is greater than 30 μm, light-emitting area is reduced, in identical size LED wafer
Identical size light emitting structure quantity reduce, to increase production cost.
In order to enable laser to cleave wafer, single core particles are formed, the utility model limits the depth of Cutting Road 30
It is fixed, wherein the Cutting Road 30 is etched from transparency conducting layer 24 in the first semiconductor layer 21.Preferably, the Cutting Road 30
Etching depth is 1-1.5 μm.Since the Cutting Road of the utility model is using ICP (inductively coupled plasma body) or RIE (reaction
Ion etching) technique formation, if the etching depth of Cutting Road 30 is less than 1 μm, etching depth is inadequate, subsequent to be difficult to using sharp
Light cuts wafer.If the etching depth of Cutting Road 30 is greater than 1.5 μm, LED wafer is easy to happen fragmentation, it is difficult to be formed
Complete core particles reduce the yield of LED chip.
S103, the corner of luminous micro-structure is performed etching, forms etch areas, the etching depth of the etch areas is big
In the etching depth of Cutting Road, and run through the first semiconductor layer.
Specifically, doing exposure mask using photoresist, while ICP or RIE etching technics is used, the corner for the micro-structure that shines carries out
Etching forms etch areas 40.
The etching depth of etch areas 40 plays important influence to the yield of LED chip, due to preventing LED chip from burning
Focus on remove can be conductive the first semiconductor layer 21, therefore etch areas 40 must remove the first semiconductor layer 21.
It is described in order to further prevent chip to burn due to being additionally provided with the laminations such as buffer layer between the first semiconductor layer 21 and substrate 10
Etch areas 40 is etched to 10 surface of substrate from transparency conducting layer 24.Preferably, the etching depth of the etch areas is 1.5-
10μm.Within the above range, the deeper etching depth the better.If the etching depth of etch areas 40 is greater than 10 μm, it is etched to lining
The inside at bottom 10, then LED wafer is easy to happen fragmentation, it is difficult to form complete core particles, reduce the yield of LED chip.
Wherein, the area of etch areas 40 also plays important influence to the yield of LED chip and brightness.Due to laser light
The diameter of spot is generally 5-8 μm, therefore the area of the etch areas 40 of the utility model needs the area greater than hot spot, preferably
, the area of the etch areas 40 is 100-900 μm2.If the area of etch areas 40 is greater than 900 μm2, then light emitting structure 20
Etching area it is excessive, to reduce the area of light emitting structure 20, and then reduce chip brightness.
It should be noted that the surface of the etch areas 40 is covered with layer of transparent protective layer (not shown), institute
Stating transparent protective layer is single or multi-layer structure, and the transparent protective layer is by SiO2、Ti2O、Al2O3With one of SiN or several
Kind is made.Preferably, the structure of the transparent protective layer is SiO2/Ti2O、SiO2/Ti2O/Al2O3、Al2O3/SiN/SiO2/
Ti2O、Ti2O/Al2O3/ SiN or SiN/SiO2/Al2O3。
Since transparent protective layer of the invention uses above structure, transparent protective layer of the invention can not only be protected
Etch areas is protected, prevents the exposed gallium nitride layer of etch areas to be sintered, can also prevent chip from leaking electricity.Further, since
Transparent protective layer of the invention is made of the material of different refractivity, can be the laser of 290-1100nm with reflection wavelength, will
Laser is reflected at etch areas, and the exposed gallium nitride layer of etch areas is further prevented to be sintered.Preferably, described
Transparent protective layer with a thickness of 100-10000nm.If the thickness of transparent protective layer is less than 100nm, reflectivity is low, and thickness is thin,
Protection is not played；If the thickness of transparent protective layer is greater than 10000nm, influences light emitting structure and go out light.
S104, first electrode is formed on the first semiconductor layer, form second electrode over transparent conductive layer.
It adopts vapor deposition method deposited metal on the first semiconductor layer 21 on exposed region 26 and forms first electrode 25,
Deposited metal forms second electrode 26 on transparency conducting layer 24.
Correspondingly, the utility model additionally provides a kind of cutting method, comprising the following steps:
The LED wafer of preventing laser cutting damage described above is provided；
It is cut using laser against Cutting Road；
It is cleaved using chopper along Cutting Road, forms single LED chip.
LED wafer cutting method provided by the utility model, will not damage chip.
Above disclosed is only a kind of preferred embodiment of the utility model, certainly cannot be practical to limit with this
Novel interest field, therefore equivalent variations made according to the claim of the utility model still belong to what the utility model was covered
Range.
Claims (8)
1. a kind of LED wafer of preventing laser cutting damage characterized by comprising
Substrate；
Multiple setting light emitting structures on substrate, the light emitting structure include the first semiconductor layer set gradually, active layer,
Second semiconductor layer, transparency conducting layer, the first electrode being connect with the first semiconductor layer and connect with transparency conducting layer
Two electrodes；
Cutting Road between adjacent light emitting structure, the Cutting Road are etched to the first semiconductor layer from transparency conducting layer；
Positioned at the etch areas of light emitting structure edge, the etching depth of the etch areas is greater than the etching depth of Cutting Road,
And run through the first semiconductor layer.
2. the LED wafer of preventing laser cutting damage as described in claim 1, which is characterized in that the surface of the etch areas
It is covered with layer of transparent protective layer, the transparent protective layer is single or multi-layer structure.
3. the LED wafer of preventing laser cutting damage as claimed in claim 2, which is characterized in that the knot of the transparent protective layer
Structure is SiO2/Ti2O、SiO2/Ti2O/Al2O3、Al2O3/SiN/SiO2/Ti2O、Ti2O/Al2O3/ SiN or SiN/SiO2/Al2O3,
The transparent protective layer reflection wavelength is the laser of 290-1100nm.
4. the LED wafer of preventing laser cutting damage as described in claim 1, which is characterized in that the etch areas is from transparent
Conductive layer is etched to substrate surface, and the etching depth of the etch areas is 1.5-10 μm.
5. the LED wafer of preventing laser cutting damage as described in claim 1, which is characterized in that the area of the etch areas
It is 100-900 μm2。
6. the LED wafer of preventing laser cutting damage as described in claim 1, which is characterized in that the Cutting Road includes that X-axis is cut
It cuts and Y-axis Cutting Road, the X-axis Cutting Road is mutually perpendicular to Y-axis Cutting Road, the etch areas is located at X-axis Cutting Road and Y
The infall of axis Cutting Road.
7. the LED wafer of preventing laser cutting damage as claimed in claim 6, which is characterized in that the width of the Cutting Road is
16-30μm。
8. the LED wafer of preventing laser cutting damage as claimed in claims 6 or 7, which is characterized in that the etching of the Cutting Road
Depth is 1-1.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920038528.6U CN209418531U (en) | 2019-01-10 | 2019-01-10 | A kind of LED wafer of preventing laser cutting damage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920038528.6U CN209418531U (en) | 2019-01-10 | 2019-01-10 | A kind of LED wafer of preventing laser cutting damage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209418531U true CN209418531U (en) | 2019-09-20 |
Family
ID=67943230
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920038528.6U Withdrawn - After Issue CN209418531U (en) | 2019-01-10 | 2019-01-10 | A kind of LED wafer of preventing laser cutting damage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209418531U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671822A (en) * | 2019-01-10 | 2019-04-23 | 佛山市国星半导体技术有限公司 | A kind of LED wafer of preventing laser cutting damage and preparation method thereof, cutting method |
-
2019
- 2019-01-10 CN CN201920038528.6U patent/CN209418531U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671822A (en) * | 2019-01-10 | 2019-04-23 | 佛山市国星半导体技术有限公司 | A kind of LED wafer of preventing laser cutting damage and preparation method thereof, cutting method |
| CN109671822B (en) * | 2019-01-10 | 2024-06-14 | 佛山市国星半导体技术有限公司 | LED wafer capable of preventing laser cutting damage, manufacturing method thereof and cutting method |
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