CN2094099U - High-stability energy-saving semiconductor gas-sensitive sensor - Google Patents
High-stability energy-saving semiconductor gas-sensitive sensor Download PDFInfo
- Publication number
- CN2094099U CN2094099U CN 91211579 CN91211579U CN2094099U CN 2094099 U CN2094099 U CN 2094099U CN 91211579 CN91211579 CN 91211579 CN 91211579 U CN91211579 U CN 91211579U CN 2094099 U CN2094099 U CN 2094099U
- Authority
- CN
- China
- Prior art keywords
- semiconductor gas
- sensitive sensor
- lead
- stability energy
- saving semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model relates to a high-stability energy-saving semiconductor gas-sensitive sensor used for heating occasions, which is made of selected semiconductor material with the characteristic of forward-direction temperature coefficient processed through the conventional technology. P T C material is adopted to be made into a columned heating body whose two ends are sintered with two roots of leading wires through silver. An outer surface of a ceramic pipe loading the heating body is coated with a thin-layer film which mainly contains tin oxide, and leading wires are respectively made at the two ends of the external side of the ceramic pipe. Four roots of leading wires are respectively arranged at the corresponding pipe pins. The utility model has the advantages of simple structure, high stability, high efficiency, and mature technology, which is an update element of the semiconductor gas-sensitive sensor.
Description
The utility model relates to a kind of high stability energy-saving semiconductor gas sensor under the needed steady temperature of automatically operating in that is used the semiconductor gas sensor occasion by forward temperature coefficient (PTC) semi-conducting material being used to of making.
Conventional semiconductor gas sensor operation principle is basic identical, but that its structure mainly contains tubular type, flat and pearl formula etc. is several, and their agent structure is close substantially.With the tubular type is example, it is based on tin oxide or zinc oxide material at a undersized ceramic insulating tube outer wall coating one deck, the slurry of some additives a little, through sintering thick film into, in ceramic insulating tube, penetrate one and turn to spiral helicine heating of metal silk, two pairs of plain conductors in the two ends pressure welding of ceramic insulating tube outer oxide thing film are connected on the six pin bases in the lump together with the heating of metal silk, and add a cover the wire netting sealing cap.This class transducer generally is applied to survey the occasion of fuel gas, with the additive difference of using, applicable to the gas with various occasion, need connect transformer during use, the direct current regulation circuit of full bridge circuit and two-stage three-terminal voltage-stabilizing, and give constant heating power, make after the heating attached to the mist of oil on the tin oxide (zinc), dust evaporation or burnout and accelerate the absorption of tested gas, when meeting the sensitiveness gas of variable concentrations, the resistance at transducer two ends can correspondingly descend significantly, and make back level sense amplifier make corresponding response rapidly, promote load then and make corresponding reflection.The conventional semiconductor gas sensor has two significant disadvantages: the one, and it is the explicit function of temperature that the electricity of gas service area (tin oxide film) is led, under permanent power is heated situation, the active region temperature is closely related with heat power and ambient temperature, be that the active region temperature obviously changes with ambient temperature, this can cause measurement result than mistake, form the unsteadiness of transducer real work; On the other hand, its heating current is from two-stage voltage stabilizing and rectification circuit, and efficient is 30% only generally, has the vast scale waste of electric flux.
It is big that the goal of the invention of the utility model is to overcome the error that has the semiconductor gas sensor existence now, poor stability and inefficient shortcoming, design simple in structure, technical maturity, highly sensitive that semi-conducting material that a kind of employing has the forward temperature coefficient characteristics is manufactured, good stability, the efficient height, the semiconductor gas sensor that directly adopts electric main to heat.
For achieving the above object, the utility model adopts high-purity superfine BaTiO
3Major ingredient is equipped with the PbTiO of proper proportion amount
3With the ptc material of other auxiliary materials, to burn die forming be the garden column of 0.8 * 4mm through giving, sintering under 1250-1400 ℃ high temperature again, then its two ends by silver and sintering on two lead-in wires of certain-length make calandria.Choose external diameter 1.5～2mm, internal diameter 1.0～1.2mm, length is the earthenware of 3.5～4.0mm, adopt conventional method at the film layer of its outer surface coating based on tin oxide, and respectively at two ends outside making line, then the PTC garden post that is shaped is embedded in the earthenware, again four lead-in wires are welded respectively on the terminal pin of corresponding base, add system wire netting sealing cap and get final product.
The utility model compared with prior art, have simple in structure, manufacture technology is ripe, can directly use electric main heating, good stability, the high outstanding advantage of efficient.
Fig. 1 is a structural representation of the present utility model.
Enforcement of the present utility model mainly divides produces the PTC calandria, produces the outer earthenware that is coated with responsive oxidation film, chooses base, four steps of preparation sealing cap, its technical process except that the PTC calandria produce with material selection, other all can adopt conventional process.
Have the forward temperature coefficient semi-conducting material (PTC) join that to get be with high-purity superfine BaTiO
3Be main material,, be equipped with an amount of PbTiO according to gas sensor operational environment and the needed temperature of condition
3With other auxiliary materials, after fully mixing stirring, give burning, ball milling again, mold pressing growth 4mm then, diameter is the garden column of 0.8mm, with its slow normal temperature that is cooled to after 1250～1400 ℃ of high temperature sinterings are shaped, by silver, and conductive lead wire 3 is standby on the sintering can constitute garden column PTC calandria 1 on its both ends of the surface.
Choosing external diameter is 1.5-2.0mm, internal diameter is the earthenware of 1.0-1.2mm, cleaning up after the oven dry it outside, surface applied is that major ingredient and the slurry that adds some kinds of auxiliary materials form film layer with tin oxide, sintering under specified temp (difference being arranged according to tested gas difference) is made its section the pipeline section of 3.5-4.0mm then and is promptly formed earthenware 2 at its two ends outside pressure welding upper conductor lead-in wire 8 again.Choose 4 terminal pins mutually and respectively with the special-shaped B of base insulation
3Or other forms of base is base 4, and cleaning, drying is stand-by.
PTC calandria 1 is penetrated in the earthenware 2, four lead-in wire 3 and 8 correspondences are welded on the terminal pin 5 of base 4, and add the adiabatic lining 6 of system in the middle of earthenware 2 and base 4, system is joined the wire netting sealing cap 7 that matches with base 4 then, just forms product.
Claims (2)
1, a kind ofly is used to heat high stability energy-saving semiconductor gas sensor under the occasion through what conventional technology was made by having forward temperature coefficient (PTC) semi-conducting material, it is characterized in that the calandria that adopts ptc material to make is long 4mm, the garden column of diameter 0.8mm, two ends are by two lead-in wires of certain-length on silver and the sintering; External diameter 1.5～2mm, internal diameter 1.0～1.2mm, length is the film layer of the earthenware outer surface coating of 3.5～4.0mm based on tin oxide, and is shaped on lead-in wire at the lateral surface two ends respectively; Calandria embeds in the earthenware, and four lead-in wires are welded respectively on the terminal pin of corresponding base.
2, high stability energy-saving semiconductor gas sensor according to claim 1 is characterized in that the directly incoming transport city electric heating of this device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91211579 CN2094099U (en) | 1991-04-26 | 1991-04-26 | High-stability energy-saving semiconductor gas-sensitive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91211579 CN2094099U (en) | 1991-04-26 | 1991-04-26 | High-stability energy-saving semiconductor gas-sensitive sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2094099U true CN2094099U (en) | 1992-01-22 |
Family
ID=4920245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91211579 Withdrawn CN2094099U (en) | 1991-04-26 | 1991-04-26 | High-stability energy-saving semiconductor gas-sensitive sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2094099U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420939C (en) * | 2003-07-18 | 2008-09-24 | 费加罗技研株式会社 | Gas sensor and producing method thereof |
-
1991
- 1991-04-26 CN CN 91211579 patent/CN2094099U/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420939C (en) * | 2003-07-18 | 2008-09-24 | 费加罗技研株式会社 | Gas sensor and producing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0017502B1 (en) | Oxygen sensor element | |
| EP0056752A1 (en) | Titania oxygen sensor with chrome oxide compensator | |
| GB1454816A (en) | Resistance thermometer sensors | |
| CA1089640A (en) | Cobalt-magnesium monoxide alloy ceramic partial pressure of oxygen sensor | |
| CN2094099U (en) | High-stability energy-saving semiconductor gas-sensitive sensor | |
| JPS58162557U (en) | discharge lamp | |
| JPS5818020A (en) | Safety device for combustion control | |
| US4156661A (en) | Method of modifying electrical properties of rare-earth chromite material | |
| CN219370707U (en) | But thick film resistor of bonding formula | |
| KR950010394B1 (en) | Gas sensor manufacturing method | |
| CN108917972A (en) | A kind of ultrathin type temperature sensor | |
| KR100369895B1 (en) | Thermistor for Middle-High Temperature and Manufacturing Method thereof | |
| US4206647A (en) | Titania thermistor and method of fabricating | |
| CN209589290U (en) | A kind of New NTC temperature sensor | |
| JPS62132380A (en) | N-type thermoelectric element | |
| CN206461790U (en) | A kind of surface charging PTC heater | |
| CN2132167Y (en) | Electronic liquid level sensing controller | |
| JPS62211525A (en) | Temperature sensor | |
| JPS59188549A (en) | Two-terminal type semiconductor gas detecting element | |
| CN2126949Y (en) | Zirconium oxide heating element | |
| JPH0256976A (en) | Liquid level sensor and manufacture thereof | |
| CN2043428U (en) | Temp. control thyratron | |
| KR910003076Y1 (en) | Automatic temperature controller | |
| GB674002A (en) | Improvements in or relating to spark plugs and method of making same | |
| CN2048283U (en) | Long life heater with temp. controller |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |