CN209402730U - MEMS microphone - Google Patents
MEMS microphone Download PDFInfo
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- CN209402730U CN209402730U CN201920066351.0U CN201920066351U CN209402730U CN 209402730 U CN209402730 U CN 209402730U CN 201920066351 U CN201920066351 U CN 201920066351U CN 209402730 U CN209402730 U CN 209402730U
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- vibrating diaphragm
- light
- absorption layer
- mems
- chip
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- 230000031700 light absorption Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
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Abstract
The utility model provides a kind of MEMS microphone, including MEMS chip, MEMS chip includes substrate, the backplane structure being fixed in substrate and the vibrating diaphragm with back chamber, wherein, light-absorption layer is deposited on vibrating diaphragm, light-absorption layer is used to draw the ambient entered from the back chamber of substrate.Using the utility model, ambient light is able to solve through the substrate of MEMS chip and carries on the back chamber and metal shell, is reflected on asic chip, the exception for causing asic chip to work, thus the problem of influencing the performance of MEMS microphone.
Description
Technical field
The utility model relates to acoustic-electric technical fields, more specifically, are related to a kind of microphone more particularly to a kind of MEMS
Microphone.
Background technique
With the development of social progress and technology, in recent years, the electronic products volume such as mobile phone, laptop constantly subtracts
Small, people are also higher and higher to the performance requirement of these portable electronic products, to also require matched electronic component
Volume constantly reduces, performance and consistency are continuously improved.MEMS (Micro-Electro-Mechanical-System, it is micro electronmechanical
System, abbreviation MEMS) the integrated MEMS microphone of technique starts by electronic products such as batch application to mobile phone, laptops
In, encapsulation volume is smaller than traditional electret microphone, therefore the favor by most of microphone manufacturer.
MEMS microphone is the microphone based on MEMS technology manufacture, and vibrating diaphragm therein, backplane are in MEMS microphone
Important component, vibrating diaphragm, backplane constitute integrated capacitor on silicon, realize the conversion of acoustic-electric.
MEMS microphone includes MEMS chip and asic chip, wherein MEMS chip can be single backplane structure, can also be with
For double backplane structures, double diaphragm structure also can be used, at present regardless of the MEMS microphone of the MEMS chip of which kind of structure, in wheat
After the completion of gram wind encapsulation process, ambient light is easy to be irradiated to metal shell by the substrate back chamber of MEMS chip, and is reflected into
On asic chip, it is made to generate photoelectric effect, the exception for causing asic chip to work influences the performance of MEMS microphone.
To solve the above-mentioned problems, the utility model provides a kind of new MEMS microphone.
Utility model content
In view of the above problems, the purpose of the utility model is to provide a kind of MEMS microphones, to solve ambient light through MEMS
The substrate back chamber and metal shell of chip, are reflected on asic chip, the exception for causing asic chip to work, to influence MEMS
The problem of performance of microphone.
MEMS microphone provided by the utility model, including MEMS chip, the MEMS chip include the base with back chamber
Bottom, fixed backplane structure and vibrating diaphragm on the substrate；Wherein,
It is deposited with light-absorption layer in the vibrating diaphragm, the light-absorption layer is used to draw from the external world that the back chamber of the substrate enters
Light.
Furthermore it is preferred that structure be, when the vibrating diaphragm be two layers of vibrating diaphragm when, two layers of vibrating diaphragm be respectively the first vibrating diaphragm and
Second vibrating diaphragm；Wherein, light-absorption layer is deposited in first vibrating diaphragm and second vibrating diaphragm.
Furthermore it is preferred that structure be that the light-absorption layer includes the first extinction that the outer surface of first vibrating diaphragm is arranged in
Second light-absorption layer of layer and the outer surface that second vibrating diaphragm is set.
Furthermore it is preferred that structure be, light-absorption layer with a thickness of 50-80nm.
Furthermore it is preferred that structure be, light-absorption layer be carbon nanometer black matrix light-absorption layer.
Furthermore it is preferred that structure be to be provided with multiple through-holes in the backplane structure.
Furthermore it is preferred that structure be that substrate is nitridation silicon base, monocrystal silicon substrate or polycrystalline silicon substrate.
Furthermore it is preferred that structure be further include shell and pcb board, the shell and the pcb board form encapsulating structure,
The MEMS chip is fixed on the pcb board.
Furthermore it is preferred that structure be to be provided with asic chip on the pcb board and be connected with the MEMS chip
Acoustic aperture, wherein
Be electrically connected between the MEMS chip and the asic chip by metal wire, and the asic chip with it is described
It is electrically connected between pcb board by metal wire.
It can be seen from the above technical scheme that MEMS microphone provided by the utility model, equal by the outer surface in vibrating diaphragm
Light-absorption layer is deposited, when ambient light carries on the back chamber by the substrate of MEMES chip, the light-absorption layer on vibrating diaphragm draws ambient light, when vibrating diaphragm is
When two layers of vibrating diaphragm (the first film and second vibrating diaphragm), the first light-absorption layer on the first vibrating diaphragm first draws ambient light, does not draw completely
Light when reaching the second vibrating diaphragm, the second light-absorption layer on the second vibrating diaphragm draws all ambient lights, prevent ambient light is from penetrating
MEMS chip enters the inside of encapsulating structure, carries on the back chamber and metal shell through the substrate of MEMS chip to solve ambient light, instead
It is mapped on asic chip, the exception for causing asic chip to work, thus the problem of influencing the performance of MEMS microphone.
Detailed description of the invention
By reference to the description below in conjunction with attached drawing, and with the utility model is more fully understood, originally
The other purposes and result of utility model will be more clearly understood and understood.In the accompanying drawings:
Fig. 1 is the MEMS microphone structure schematic diagram according to the utility model embodiment；
Fig. 2 is the vibrating diaphragm and extinction schematic diagram of a layer structure according to the utility model embodiment.
Appended drawing reference therein includes: the 1, first vibrating diaphragm, the 2, second vibrating diaphragm, the 3, first light-absorption layer, the 4, second light-absorption layer, 5,
Backplane structure, 6, substrate, 7, back chamber, 8, ambient light.
Identical label indicates similar or corresponding feature or function in all the appended drawings.
Specific embodiment
For in the existing MEMS microphone structure of aforementioned proposition, ambient light carries on the back chamber and metal through the substrate of MEMS chip
Shell is reflected on asic chip, the exception for causing asic chip to work, thus the problem of influencing the performance of MEMS microphone,
The utility model provides a kind of new MEMS microphone, by depositing light-absorption layer on the vibrating diaphragm of MEMS chip, to prevent
Ambient light is entered inside encapsulating structure by the back chamber of substrate and is irradiated on asic chip, to avoid asic chip generation
Photoelectric effect influences the performance of MEMS microphone.
Specific embodiment of the utility model is described in detail below with reference to attached drawing.
In order to illustrate the structure of MEMS microphone provided by the utility model, Fig. 1 to Fig. 2 is respectively from different perspectives to MEMS
The structure of microphone has carried out exemplary mark.Specifically, Fig. 1 shows the MEMS microphone according to the utility model embodiment
Structure；Fig. 2 shows the vibrating diaphragms and light-absorption layer structure according to the utility model embodiment.
As Fig. 1 and Fig. 2 jointly shown in, MEMS microphone provided by the utility model includes MEMS chip, MEMS chip packet
Include the substrate 6 with back chamber 7, the backplane structure 5 being fixed in substrate 6 and vibrating diaphragm, wherein it is deposited with light-absorption layer in vibrating diaphragm,
Light-absorption layer is used to draw the ambient entered from the back chamber of substrate 6
In the utility model embodiment shown in Fig. 2, two layers of vibrating diaphragm is respectively the first vibrating diaphragm 1 and the second vibrating diaphragm 2；Its
In, being deposited with light-absorption layer in the first vibrating diaphragm 1 and the second vibrating diaphragm 2, (the first vibrating diaphragm 1 is corresponding with the first light-absorption layer 3, the second vibrating diaphragm
2 is corresponding with the second light-absorption layer 4), light-absorption layer is used to draw the ambient entered from the back chamber 7 of substrate 6.
As shown in Fig. 2, light-absorption layer includes that the first light-absorption layer 3 of the outer surface of the first vibrating diaphragm 1 is arranged in and is arranged second
Second light-absorption layer 4 of the outer surface of vibrating diaphragm 2.Due to the first light-absorption layer 3, the second light-absorption layer 4 be deposited on respectively the first vibrating diaphragm 1,
On second vibrating diaphragm 2, the technique based on deposition, the first light-absorption layer 3 can only be deposited on the outside (outer surface) of the first vibrating diaphragm, and second
Light-absorption layer 4 can only be deposited on the outside (outer surface) of the second vibrating diaphragm.
Wherein, light-absorption layer with a thickness of 50-80nm.That is: the first light-absorption layer 3, the second light-absorption layer 4 thickness be 50-
80nm；In general, light-absorption layer is carbon nanometer black matrix light-absorption layer, in the embodiments of the present invention, the first light-absorption layer 3, the
Two light-absorption layers 4 are carbon nanometer black matrix light-absorption layer.Carbon nanometer black matrix makes ambient light 8 that can not be irradiated to ASIC for absorbing light
On chip 8, to enhance the reliability of microphone.
In the embodiments of the present invention, the principle against sunshine made an uproar of light-absorption layer: in the appearance of two layers of vibrating diaphragm of MEMS chip
Face deposits light-absorption layer.When ambient light 8 enters the first vibrating diaphragm 1 of MEMS chip by the acoustic aperture of MEMS microphone, the first extinction
Layer 3 carries out first time extinctions, if having remaining ambient light 8 to reach the second vibrating diaphragm 2 by the first vibrating diaphragm 1 afterwards, on the second vibrating diaphragm 2
Second light-absorption layer 4 will do it secondary extinction, the ambient light 8 of sucked away, so that the anti-light ability of making an uproar of MEMS microphone obtains pole
It is big to improve.
In the embodiments of the present invention, substrate 4 is nitridation silicon base, monocrystal silicon substrate or polycrystalline silicon substrate；Back
Pole structure 5 can be single back pole plate structure, or double back pole plate structures, and multiple lead to is provided in backplane structure 5
Hole, wherein when backplane structure 5 is double back pole plate structures, vibrating diaphragm and back pole plate interval are arranged, and vibrating diaphragm is arranged in two back pole plates
Between.
In the embodiments of the present invention, vibrating diaphragm can be single vibrating diaphragm, or double diaphragm.When vibrating diaphragm is double diaphragm
When, vibrating diaphragm and back pole plate are also interval setting, and back pole plate is arranged between two layers of vibrating diaphragm.Wherein, vibrating diaphragm and back pole plate form electricity
Container will be converted to electric signal by the voice signal for carrying on the back chamber；In the application, ambient light 8 reaches two layers of vibrating diaphragm by back chamber
When, the light-absorption layer on vibrating diaphragm draws ambient light 8, to improve the performance against sunshine made an uproar of microphone.
In addition, in the embodiments of the present invention, MEMS microphone further includes shell and pcb board, shell and pcb board group
At encapsulating structure, MEMS chip is fixed on pcb board.It is provided with asic chip on pcb board and is connected with MEMS chip
Acoustic aperture, wherein between MEMS chip and asic chip by metal wire be electrically connected and asic chip and pcb board between
It is electrically connected by metal wire.
By above embodiment as can be seen that MEMS microphone provided by the utility model, passes through the appearance in vibrating diaphragm
Face deposits light-absorption layer, and when ambient light carries on the back chamber by the substrate of MEMS chip, the light-absorption layer on vibrating diaphragm draws ambient light, works as vibrating diaphragm
When for two layers of vibrating diaphragm (the first film and the second vibrating diaphragm), the first light-absorption layer on the first vibrating diaphragm first draws ambient light, does not inhale completely
When the light taken reaches the second vibrating diaphragm, the second light-absorption layer on the second vibrating diaphragm draws all ambient lights, prevent ambient light is from saturating
It crosses MEMS chip and enters the inside of encapsulating structure, carry on the back chamber and metal shell through the substrate of MEMS chip to solve ambient light,
It is reflected on asic chip, the exception for causing asic chip to work, thus the problem of influencing the performance of MEMS microphone.
Described in an illustrative manner above with reference to attached drawing according to the utility model proposes MEMS microphone.But this
Field can also not depart from this reality it will be appreciated by the skilled person that for the MEMS microphone that above-mentioned the utility model is proposed
With making various improvement on the basis of new content.Therefore, the protection scope of the utility model should be by the attached claims
The content of book determines.
Claims (9)
1. a kind of MEMS microphone, including MEMS chip, the MEMS chip includes the substrate with back chamber, is fixed on the base
Backplane structure and vibrating diaphragm on bottom；It is characterized in that,
Light-absorption layer is deposited on the vibrating diaphragm, the light-absorption layer is used to draw the ambient light entered from the back chamber of the substrate
Line.
2. MEMS microphone as described in claim 1, which is characterized in that
When the vibrating diaphragm is two layers of vibrating diaphragm, two layers of vibrating diaphragm is respectively the first vibrating diaphragm and the second vibrating diaphragm；Wherein, described
One vibrating diaphragm and second vibrating diaphragm are deposited with light-absorption layer.
3. MEMS microphone as claimed in claim 2, which is characterized in that
The light-absorption layer includes that the first light-absorption layer of the outer surface of first vibrating diaphragm is arranged in and is arranged in second vibrating diaphragm
Outer surface the second light-absorption layer.
4. MEMS microphone as described in claim 1, which is characterized in that
The light-absorption layer with a thickness of 50-80nm.
5. MEMS microphone as described in claim 1, which is characterized in that
The light-absorption layer is carbon nanometer black matrix light-absorption layer.
6. MEMS microphone as described in claim 1, which is characterized in that
Multiple through-holes are provided in the backplane structure.
7. MEMS microphone as described in claim 1, which is characterized in that
The substrate is nitridation silicon base, monocrystal silicon substrate or polycrystalline silicon substrate.
8. MEMS microphone as described in claim 1, which is characterized in that
It further include shell and pcb board, the shell and the pcb board form encapsulating structure, and the MEMS chip is fixed on described
On pcb board.
9. MEMS microphone as claimed in claim 8, which is characterized in that
The acoustic aperture for being provided with asic chip on the pcb board and being connected with the MEMS chip, wherein
It is electrically connected between the MEMS chip and the asic chip by metal wire, and the asic chip and the PCB
It is electrically connected between plate by metal wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920066351.0U CN209402730U (en) | 2019-01-15 | 2019-01-15 | MEMS microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920066351.0U CN209402730U (en) | 2019-01-15 | 2019-01-15 | MEMS microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209402730U true CN209402730U (en) | 2019-09-17 |
Family
ID=67898543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920066351.0U Active CN209402730U (en) | 2019-01-15 | 2019-01-15 | MEMS microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209402730U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111200779A (en) * | 2019-12-18 | 2020-05-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
-
2019
- 2019-01-15 CN CN201920066351.0U patent/CN209402730U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111200779A (en) * | 2019-12-18 | 2020-05-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
| CN111200779B (en) * | 2019-12-18 | 2021-11-26 | 歌尔微电子有限公司 | Electret microphone and electronic device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 266100 Qingdao, Laoshan District, North House Street investment service center room, Room 308, Shandong Patentee before: GOERTEK TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |