CN209266395U - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
CN209266395U
CN209266395U CN201822130947.0U CN201822130947U CN209266395U CN 209266395 U CN209266395 U CN 209266395U CN 201822130947 U CN201822130947 U CN 201822130947U CN 209266395 U CN209266395 U CN 209266395U
Authority
CN
China
Prior art keywords
lead
temperature
diameter
control unit
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201822130947.0U
Other languages
Chinese (zh)
Inventor
下田一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to CN201822130947.0U priority Critical patent/CN209266395U/en
Application granted granted Critical
Publication of CN209266395U publication Critical patent/CN209266395U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

The embodiment of the present application provides a kind of semiconductor device (10), with power part (11), control unit (12) and resin-encapsulated body (13), power part (11) has power component (111) and temperature-sensing element (112), control unit (12) temperature according to measured by temperature-sensing element (112) controls power component (111), power component (111) is connect by first lead (141) with control unit (12), temperature-sensing element (112) is connect by the second lead (142) with control unit (12), resin-encapsulated body (13) is to control element (121), power component (111), temperature-sensing element (112), first lead (141) and the second lead (142) are sealed encapsulation, wherein, second lead (142) Diameter be greater than first lead (141) diameter, also, the rigidity of the second lead (142) be higher than first lead (141) rigidity.Thereby, it is possible to improve the temperature detecting precision of temperature-sensing element.

Description

Semiconductor device
Technical field
This application involves technical field of semiconductors more particularly to a kind of semiconductor devices.
Background technique
In the manufacturing process of resin molded semiconductor device that there is power part and control unit inside resin-encapsulated body, Have a problem in that vibration when conveying or the flowing of resin when being sealed using resin, it can be in semiconductor device Lead applies external force, is deformed lead, so that the neck and wire bonding interconnecting piece in lead generate excessive stress, leads It causes lead and wire connections are detached from or even wire breaking.
To solve the above-mentioned problems, in the prior art, will connect between the power part of semiconductor device and control unit The lead connect is arranged relatively thin and hardness is higher, avoids lead to generate by biggish external force as a result, and reduce wire breaking Probability.
It should be noted that the above description of the technical background is intended merely to conveniently carry out clearly the technical solution of the utility model Chu, complete explanation, and facilitate the understanding of those skilled in the art and illustrate.It cannot be merely because these schemes be practical at this Novel background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Utility model content
In recent years, resin molded semiconductor device has the market demand of high-power.In order to cope with high-power institute's band There is the technical solution that the setting inside resin-encapsulated body carries out the temperature-sensing element of temperature detection in the heating problem come, wherein Temperature-sensing element is, for example, thermistor.In the technical scheme, it is attached to be arranged on the more power component of calorific value for temperature-sensing element Closely, for detecting the temperature inside resin-encapsulated body, which is electrically connected by lead with control unit, and control unit can root The power component of power part is controlled according to temperature-sensing element temperature detected.
The inventors of the present application found that if still use lead set-up mode in the prior art, that is, by temperature-sensing element with The lead being attached between control unit is set as may create the problem that the electricity of the lead compared with the thin and higher lead of hardness Resistance is higher, and the temperature detecting precision of temperature-sensing element will decline.
In order to solve the problem above-mentioned, the application provides a kind of semiconductor device, by between temperature-sensing element and control unit into The lead of row connection is set as being relatively large in diameter and lead with a higher rigidity, and thereby, it is possible to improve the temperature detection of temperature-sensing element essence Degree.
According to the one aspect of the embodiment of the present application, a kind of semiconductor device 10 is provided, there is power part 11, control unit 12 With resin-encapsulated body 13, the power part 11 has power component 111 and temperature-sensing element 112, and the temperature-sensing element 112 is for surveying The temperature of the power part 11 is measured, the control unit 12 temperature according to measured by the temperature-sensing element 112 is to the power member Part 111 is controlled, and the power component 111 is connect by first lead 141 with the control unit 12, the temperature-sensing element 112 are connect by the second lead 142 with the control unit 12, and the resin-encapsulated body 13 is to the control element 121, the function Rate element 111, the temperature-sensing element 112, the first lead 141 and second lead 142 are sealed encapsulation, wherein The diameter of second lead 142 is greater than the diameter of the first lead 141, also, the rigidity of second lead 142 is higher than The rigidity of the first lead 141.
According to the other side of the embodiment of the present application, wherein the material of second lead is aluminium.
According to the other side of the embodiment of the present application, wherein the diameter of second lead is 300~500 microns.
According to the other side of the embodiment of the present application, wherein the control unit 12 has control element described at least two 121, wherein the temperature according to measured by the temperature-sensing element 112 of control element 121 described at least one is to the power component 111 are controlled, and the control unit 12 also has connecting element 122, and the connecting element 122 is by third lead 143 and extremely Few 2 control elements 121 connect, and the diameter of the third lead 143 is less than the diameter of second lead 142.
According to the other side of the embodiment of the present application, wherein the semiconductor device also has circuit substrate 15,
The circuit substrate 15 have insulating layer 151, be set to the upper conductor layer 152 of 151 upper surface of insulating layer with And it is set to the lower conductor layer 153 of 151 lower surface of insulating layer, the power component 111 and the temperature-sensing element 112 are carried It is placed in the surface of the upper conductor layer 152 of the circuit substrate 15.
According to the other side of the embodiment of the present application, wherein the power part 11 also has first lead frame 113, The power component 111 is connect by the 4th lead 144 with the first wire connecting portion of the first lead frame 113, and described first First external terminal of lead frame 113 exposes from the resin-encapsulated body 13.
According to the other side of the embodiment of the present application, wherein the diameter of the 4th lead is 300~500 microns.
According to the other side of the embodiment of the present application, wherein the control unit 12 also has the second lead frame 123, The control element 121 is connect by the 5th lead 145 with the second wire connecting portion of second lead frame 123, and described second Second external terminal of lead frame 123 exposes from the resin-encapsulated body 13, wherein the diameter of the 5th lead 145 is small In the diameter of second lead 142.
The utility model has the beneficial effects that: setting straight for the lead being attached between temperature-sensing element and control unit Diameter is larger and lead with a higher rigidity, and thereby, it is possible to improve the temperature detecting precision of temperature-sensing element.
Referring to following description and accompanying drawings, the particular implementation of the utility model is disclosed in detail, specifies practical Novel principle can be in a manner of adopted.It should be understood that the embodiments of the present invention in range not thus by Limitation.In the range of the spirit and terms of appended claims, the embodiments of the present invention includes many changes, modifications With it is equivalent.
Detailed description of the invention
Included attached drawing is used to provide to be further understood from the utility model embodiment, and which constitute specifications A part for illustrating the embodiments of the present invention, and comes together to illustrate the principles of the present invention with verbal description.It is aobvious And easy insight, the drawings in the following description are merely some embodiments of the present invention, for those of ordinary skill in the art For, without creative efforts, it is also possible to obtain other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is a perspective diagram of the semiconductor device of the embodiment of the present application 1；
Fig. 2 is the schematic diagram of the wire connections part A using diameter lesser golden (Au) or copper (Cu) and part B；
Fig. 3 is a schematic diagram of the wire connections part A and part B using the aluminium (Al) being relatively large in diameter；
Fig. 4 is the schematic diagram in a section of the direction the C-C observation of the semiconductor device of Fig. 1.
Specific embodiment
Referring to attached drawing, by following specification, the aforementioned and other feature of the utility model be will be apparent.It is saying In bright book and attached drawing, the particular implementation of the utility model is specifically disclosed, which show wherein can be practical new using this The some embodiments of the principle of type, it will thus be appreciated that the utility model is not limited to described embodiment, on the contrary, this reality With novel whole modifications, modification and equivalent including falling within the scope of the appended claims.
In the embodiment of the present application, term " first ", " second " etc. are used to distinguish different elements from appellation, but It is not offered as space arrangement or the time sequencing etc. of these elements, these elements should not be limited by these terms.Term " and/ Or " include the associated term listed one kind or any one of multiple and all combinations.Term "comprising", " comprising ", " having " etc. refers to the presence of stated feature, element, element or component, but presence or addition one or more is not precluded Other features, element, element or component.
In the embodiment of the present application, singular " one ", "the" etc. include plural form, should be broadly interpreted as "an" Or " one kind " and be not defined as "one" meaning；In addition, term "the" be interpreted as both include singular and also including Plural form, unless the context clearly indicates otherwise.In addition, term " according to " is interpreted as " based in part on ... ", art Language " being based on " is interpreted as " being at least partially based on ... ", unless the context clearly indicates otherwise.
Embodiment 1
The embodiment of the present application 1 provides a kind of semiconductor device.
Fig. 1 is a perspective diagram of the semiconductor device of the present embodiment.As shown in Figure 1, semiconductor device 10 has Power part 11, control unit 12 and resin-encapsulated body 13.
In the present embodiment, power part 11 has power component 111 and temperature-sensing element 112.Wherein, temperature-sensing element 112 is used In the temperature of measurement power part 11.
In this embodiment, control unit 12 can the temperature according to measured by temperature-sensing element 112 power component 111 is controlled System.
In the present embodiment, as shown in Figure 1, power component 111 can be connect by first lead 141 with control unit 12； Temperature-sensing element 112 can be connect by the second lead 142 with control unit 12；Resin-encapsulated body 13 can be to control element 121, function Rate element 111, temperature-sensing element 112, first lead 141 and the second lead 142 are sealed encapsulation.
In the present embodiment, the diameter of the second lead 142 can be greater than the diameter of first lead 141, also, the second lead 142 rigidity can be higher than the rigidity of first lead 141.
According to the present embodiment, since the diameter of the second lead 142 is bigger, the resistance of the second lead is lower, temperature-sensitive The temperature detecting precision of element can be enhanced；Further, since the rigidity of the second lead 142 is higher, second lead is in outer masterpiece It is not susceptible to vibrate under and deform, and second lead can play and increase power part 11 and 12 bonding strength of control unit Effect, improves the reliability of semiconductor device.
In the present embodiment, the material of first lead 141 can be the higher metal material of electric conductivity, such as golden (Au), The materials such as copper (Cu) or aluminium (Al).The diameter of first lead 141 can be tens microns, for example, 35 microns.First lead 141 diameter is smaller, and in sealing resin flowing, the forced area of first lead 141 is smaller, thus the sealing resin being subject to Active force is smaller, can be improved the reliability of first lead 141.
In the present embodiment, the diameter of the second lead 142 can be 300~500 microns, as a result, the section of the second lead Product is larger, and resistance is smaller, to improve the temperature detecting precision of temperature-sensing element.
In the present embodiment, the material of the second lead 142 can be that electric conductivity is higher and the higher metal material of hardness, example Such as aluminium (Al).In the present embodiment, use aluminium (Al) as the second lead 142, can be improved the rigidity of the second lead 142.This Outside, use aluminium (Al) as the second lead 142, even if the second lead 142 is relatively large in diameter, can also make the second lead 142 at Originally it is inhibited.
In the following, being illustrated in conjunction with rigidity of the Fig. 2 and Fig. 3 to the second lead.
Fig. 2 is the schematic diagram of the wire connections part A using diameter lesser golden (Au) or copper (Cu) and part B.
As shown in (a) of Fig. 2, when using golden (Au) or copper (Cu) as lead 2, golden (Au) or copper (Cu) material are stretched Length degree is larger, and the curvature of the bending section 2a of lead 2 is larger.
As shown in (b) of Fig. 2, when components A is subjected to displacement, the bending section 2a of lead 2 is easy to produce deformation, to avoid Biggish stress is generated on lead 2.In addition, when part B is subjected to displacement, the deformation and Fig. 2 (b) of the bending section 2a of lead 2 Shown situation is similar.
However, using using golden (Au) or copper (Cu) to will appear following problem as lead 2: due to the curvature of bending section Larger, when by external force, the Oscillation Amplitude of lead 2 itself becomes larger lead 2, therefore, lead 2 and components A and/or component The connection reliability of B can reduce.
Fig. 3 is a schematic diagram of the wire connections part A and part B using the aluminium (Al) being relatively large in diameter.Such as Fig. 3 institute Show, when using aluminium (Al) as lead 3, the spread length of aluminium (Al) material is smaller, thus the curvature of the bending section 3a of lead 3 Smaller, for lead 3 when by external force, the Oscillation Amplitude of lead 3 itself becomes smaller.Therefore, lead 3 and components A and/or portion The connection reliability of part B improves.In addition, the rigidity of the lead 3 for the aluminium (Al) being relatively large in diameter is higher, thus lead 3 can be reinforced Bonding strength between components A and part B reduces the vibration of components A and part B.
In the present embodiment, power component 111 for example can be insulated gate bipolar transistor (IGBT), in addition, power Element 111 is also possible to other elements.The material of power component 111 can be semiconductor material, which is, for example, Silicon (Si).In addition, the semiconductor material is also possible to compound semiconductor materials, which is, for example, to be carbonized Silicon (SiC) or gallium nitride (GaN) etc., compared with silicon, when using compound semiconductor materials, power component 111 is able to carry out Movement under the condition of high temperature in addition, switching speed is faster, and is lost lower.
In the present embodiment, temperature-sensing element 112 can be arranged near power component 111, be used for resin-encapsulated body Temperature detection inside 13.Temperature-sensing element 112 for example can be negative temperature coefficient (Negative Temperature Coefficient, NTC) thermistor, wherein NTC thermistor is that resistance value is exponentially reduced to function when temperature rises Electronic component.
In the present embodiment, the material of resin-encapsulated body 13 can be heat-curable epoxy resin.In the present embodiment, may be used It to use resin molding mold and stamping device etc. as pressure injection mold, is molded with resin, to form resin-encapsulated body 13.
In the present embodiment, as shown in Figure 1, the control unit 12 of semiconductor device 10 has at least two control element 121, Wherein, at least one control element 121 can the temperature according to measured by temperature-sensing element 112 power component 111 is controlled, For example, control element 121 closes the power component 111 when temperature is more than threshold value.
In the present embodiment, the operating temperature of the operating temperature specific power element of control element 121 is low, control element 121 Material be, for example, silicon materials constitute.
As shown in Figure 1, control unit 12 also has connecting element 122, the resistance of the connecting element 122 is very small, the connection Element 122 can be used in the interconnection in control unit 12 between control element 121.Connecting element 122 may include substrate and setting In the conductor layer of substrate surface, which can be silicon substrate or resin substrate etc..By the way that connecting element 122, control member is arranged Interconnection between part 121 can be more flexible, also, avoids using longer lead between control element 121, it is thus possible to Improve the reliability of interconnection.
In one embodiment, connecting element 122 can be connected by third lead 143 and at least two control element 121 It connects, so that at least two control element 121 be made to connect.For example, in Fig. 1, connecting element 122 by lead 143 respectively with a left side The connection of the control element 121 on side and right side, the control element 121 of left and right side can pass through the connecting element 122 as a result, Connection.
In the present embodiment, the diameter of third lead 143 can be less than the diameter of the second lead 142.In an embodiment party In formula, the diameter of third lead 143 can be tens microns, such as 35 microns.In the present embodiment, the material of third lead 143 Material can be the higher metal material of electric conductivity, such as golden (Au), the materials such as copper (Cu) or aluminium (Al).
In the present embodiment, as shown in Figure 1, semiconductor device 10 also has circuit substrate 15, wherein power component 111 The surface of circuit substrate 15 can be placed in temperature-sensing element 112.
Fig. 4 is the schematic diagram in a section of the direction the C-C observation of the semiconductor device 10 of Fig. 1, as shown in figure 4, circuit Substrate 15 has insulating layer 151, is set to the upper conductor layer 152 of 151 upper surface of insulating layer and is set to 151 following table of insulating layer The lower conductor layer 153 in face.Wherein, the material of insulating layer 151 can be the excellent insulating materials of heat conductivity, such as aluminium nitride (AlN) or silicon nitride (Si3N4)；The material of upper conductor layer 152 and lower conductor layer 153 1 can be the higher metal material of electric conductivity Material, for example, copper (Cu) material etc..
As shown in figure 4, power component 111 can be placed in the surface of the upper conductor layer 152 of circuit substrate 15.In addition, Temperature-sensing element 112 (Fig. 4 is not shown) can also be placed in the surface of the upper conductor layer 152 of circuit substrate 15.
In the present embodiment, upper conductor layer 152 can form circuit pattern, thus to the table that upper conductor layer 152 is arranged in The element in face carries out circuit connection.Lower conductor layer 153 can be used for thermally conductive, wherein, can for the ease of the heat dissipation of lower conductor layer 153 So that (as shown in Figure 4) is exposed from resin-encapsulated body 13 in the lower surface of lower conductor layer 153.
As shown in Figure 1, the power part 11 of semiconductor device 10 also has first lead frame 113.Power component 111 can be with Connect by the 4th lead 144 with the first wire connecting portion 1131 of first lead frame 113, first lead frame 113 first outside Portion's terminal 1132 exposes from resin-encapsulated body 13.
In the present embodiment, the diameter of the 4th lead 144 can be 300~500 microns.Thereby, it is possible to by power component The high current of 111 outputs is transported to first lead frame 113 by the 4th lead 144.
In the present embodiment, the material of the 4th lead 144 can be the higher metal material of electric conductivity, such as golden (Au), The materials such as copper (Cu) or aluminium (Al).
As shown in Figure 1, the control unit 12 of semiconductor device 10 can also have the second lead frame 123.Control element 121 Connect by the 5th lead 145 with the second wire connecting portion 1231 of the second lead frame 123, the second lead frame 123 second outside Portion's terminal 1232 can expose from resin-encapsulated body 13.
In the present embodiment, the diameter of the 5th lead 145 can be less than the diameter of the second lead 142.In an embodiment party In formula, the diameter of the 5th lead 145 can be tens microns, for example, the diameter of the 5th lead 145 can be 35 microns.5th The material of lead 145 can be the higher metal material of electric conductivity, such as golden (Au), the materials such as copper (Cu) or aluminium (Al).
In the present embodiment, first lead frame 113 and the second lead frame 123, which can be, carries out punching press to board-like material Punch press process and/or chemical etching, which are processed, to be formed.The board-like material is, for example, copper (Cu) or copper (Cu) alloy.In addition, the One lead frame 113 and 123 surface of the second lead frame can also have coating, for example, forming silver plating by silver-colored (Ag) plating Layer.
In the present embodiment, semiconductor device 10 can be intelligent power module (Intelligent Power Module, IPM).Due to temperature-sensing element in the IPM, it is thus possible to realize that for example the functions such as overheat (Over Hot, OH) protection, OH are protected Shield is the defencive function that power component overheats in IPM, for example, when temperature-sensing element detects that the intracorporal temperature of resin-encapsulated is more than threshold When value, control element can control the power component and stop working, to realize that OH is protected.In addition, the control element in IPM is also The electronic component that can have other control functions, also, can also have Fig. 1 to be not shown in IPM, as a result, IPM energy It is enough to realize other functions, for example, alarm (Alarm, ALM) output function and/or driving power low-voltage protection function, and/ Or overcurrent (Over Current) defencive function and/or short-circuit protection function etc..
According to the present embodiment, since the diameter of the second lead is bigger, the resistance of the second lead is lower, temperature-sensitive member The temperature detecting precision of part can be enhanced；Further, since the rigidity of the second lead is higher, second lead is under external force not Vibration and deformation easily occurs, and second lead can play the role of increasing power part and control unit bonding strength, improve The reliability of semiconductor device.
Combine specific embodiment that the utility model is described above, but those skilled in the art should be clear Chu, these descriptions are all exemplary, and are not the limitation to scope of protection of the utility model.Those skilled in the art can root Various variants and modifications are made to the utility model according to the spirit and principle of the utility model, these variants and modifications are also in this reality With in novel range.

Claims (8)

1. a kind of semiconductor device has power part (11), control unit (12) and resin-encapsulated body (13), which is characterized in that
The power part (11) has power component (111) and temperature-sensing element (112), and the temperature-sensing element (112) is for measuring The temperature of the power part (11),
Control unit (12) temperature according to measured by the temperature-sensing element (112) controls the power component (111) System,
The power component (111) is connect by first lead (141) with the control unit (12),
The temperature-sensing element (112) is connect by the second lead (142) with the control unit (12),
The resin-encapsulated body (13) is to the control element (121) of the control unit (12), the power component (111), described Temperature-sensing element (112), the first lead (141) and second lead (142) are sealed encapsulation,
Wherein,
The diameter of second lead (142) is greater than the diameter of the first lead (141), also, second lead (142) Rigidity be higher than the first lead (141) rigidity.
2. semiconductor device as described in claim 1, which is characterized in that
The material of second lead is aluminium.
3. semiconductor device as described in claim 1, which is characterized in that
The diameter of second lead is 300~500 microns.
4. semiconductor device as described in claim 1, which is characterized in that
The control unit (12) has control element (121) described at least two, wherein control element described at least one (121) The power component (111) is controlled according to temperature measured by the temperature-sensing element (112),
The control unit (12) also has connecting element (122), and the connecting element (122) is by third lead (143) and extremely Few 2 control element (121) connections, the diameter of the third lead (143) are less than the straight of second lead (142) Diameter.
5. semiconductor device as described in claim 1, which is characterized in that
The semiconductor device also has circuit substrate (15),
The upper conductor layer that the circuit substrate (15) has insulating layer (151), is set to the insulating layer (151) upper surface (152) and it is set to the lower conductor layer (153) of the insulating layer (151) lower surface,
The power component (111) and the temperature-sensing element (112) are placed in the upper conductor of the circuit substrate (15) The surface of layer (152).
6. semiconductor device as described in claim 1, which is characterized in that
The power part (11) also has first lead frame (113), and the power component (111) passes through the 4th lead (144) Connect with the first wire connecting portion of the first lead frame (113), the first external terminal of the first lead frame (113) from The resin-encapsulated body (13) is exposed.
7. semiconductor device as claimed in claim 6, which is characterized in that
The diameter of 4th lead is 300~500 microns.
8. semiconductor device as claimed in claim 4, which is characterized in that
The control unit (12) also has the second lead frame (123), and the control element (121) passes through the 5th lead (145) Connect with the second wire connecting portion of second lead frame (123), the second external terminal of second lead frame (123) from The resin-encapsulated body (13) is exposed,
Wherein, the diameter of the 5th lead (145) is less than the diameter of second lead (142).
CN201822130947.0U 2018-12-19 2018-12-19 Semiconductor device Active CN209266395U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201822130947.0U CN209266395U (en) 2018-12-19 2018-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201822130947.0U CN209266395U (en) 2018-12-19 2018-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
CN209266395U true CN209266395U (en) 2019-08-16

Family

ID=67560343

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201822130947.0U Active CN209266395U (en) 2018-12-19 2018-12-19 Semiconductor device

Country Status (1)

Country Link
CN (1) CN209266395U (en)

Similar Documents

Publication Publication Date Title
US6756658B1 (en) Making two lead surface mounting high power microleadframe semiconductor packages
CN106104779B (en) Power semiconductor apparatus
CN101073151B (en) Semiconductor package structure having enhanced thermal dissipation characteristics
US7582958B2 (en) Semiconductor package
US8674492B2 (en) Power module
US7375424B2 (en) Wirebonded device packages for semiconductor devices having elongated electrodes
CN105655306A (en) Double-side welding and single-side heat radiation power module integrated on heat radiation substrate
JP2016018866A (en) Power module
US10763201B2 (en) Lead and lead frame for power package
WO2006074312A2 (en) Dual flat non-leaded semiconductor package
CN209266395U (en) Semiconductor device
US5248895A (en) Semiconductor apparatus having resin encapsulated tab tape connections
JP2015211178A (en) Semiconductor device
US9806008B1 (en) Clip based semiconductor package for increasing exposed leads
CN205406513U (en) Semiconductor device
CN101819955B (en) Semiconductor packaging structure with reinforced heat dissipation property
US20110062569A1 (en) Semiconductor device package with down-set leads
WO2017157486A1 (en) Semiconductor device
CN205104480U (en) Semiconductor device
CN111354703A (en) Packaged electronic component and manufacturing method thereof
CN203339143U (en) Semiconductor device
US11515238B2 (en) Power die package
US11769715B2 (en) Semiconductor device
CN204257622U (en) Semiconductor device and electronic equipment
CN218996706U (en) Copper strip bonding type power module packaging structure for epoxy plastic package vehicle

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant