CN204257622U - Semiconductor device and electronic equipment - Google Patents

Semiconductor device and electronic equipment Download PDF

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Publication number
CN204257622U
CN204257622U CN201420844472.0U CN201420844472U CN204257622U CN 204257622 U CN204257622 U CN 204257622U CN 201420844472 U CN201420844472 U CN 201420844472U CN 204257622 U CN204257622 U CN 204257622U
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China
Prior art keywords
semiconductor device
electrode
binding post
wire
semiconductor element
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CN201420844472.0U
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Chinese (zh)
Inventor
大塚洋文
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Priority to CN201420844472.0U priority Critical patent/CN204257622U/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model embodiment provides a kind of semiconductor device and electronic equipment, this semiconductor device comprises: semiconductor element, connect the binding post of outside terminal, connect the lead-in wire of described semiconductor element and described binding post, and by resin-encapsulated body that described semiconductor element, described binding post and described lead-in wire encapsulate with potting resin, it is characterized in that, described semiconductor device also comprises: connect converter section, described semiconductor element and described binding post are carried out distribution by the lead-in wire of straight line by described connection converter section.The semiconductor device of the present embodiment utilizes and connects converter section carries out the lead-in wire of straight line distribution to semiconductor element and binding post, can prevent from producing larger stress at the neck of lead-in wire, improves the reliability of neck.

Description

Semiconductor device and electronic equipment
Technical field
The utility model relates to technical field of semiconductors, particularly relates to a kind of semiconductor device and the electronic equipment comprising this semiconductor device.
Background technology
Semiconductor device is widely used in electronic equipment.As described in first document CN202977407U, in the prior art, as shown in Figure 1, resin packed power semiconductor device is made up of resin-encapsulated body, multiple semiconductor element 11, outside terminal 12 and lead-in wire 13 are encapsulated by potting resin by this resin-encapsulated body, wherein, the plurality of semiconductor element is that electric power is used and controlled to use, this outside terminal has binding post, it is inner that this binding post is positioned at this resin-encapsulated body, and this lead-in wire is by the plurality of semiconductor element and the electrical connection of this binding post.
Although the configuration of the semiconductor element 11 of semiconductor device inside is considered circuit and heat radiation etc. and determines, the configuration of outside terminal 12 is wiring according to installation base plate and pre-determines.Thus, from semiconductor element 11 to when determining outside terminal 12 wire-bonded connected, by pulling around to transverse direction, the angle of the neck of lead-in wire 13 becomes large, owing to producing larger stress at neck, neck can be produced and disconnect and electric wire stripping, produce the problem of reliability.
Above it should be noted that, just conveniently to the technical solution of the utility model, clear, complete explanation is carried out to the introduction of technical background, and facilitate the understanding of those skilled in the art to set forth.Only can not think that technique scheme is conventionally known to one of skill in the art because these schemes have carried out setting forth in background technology part of the present utility model.
Utility model content
In order to solve the problem that background technology is pointed out, the utility model embodiment provides a kind of semiconductor device and electronic equipment.
According to the first aspect of the utility model embodiment, a kind of semiconductor device is provided, this semiconductor device comprises: semiconductor element, connect the binding post of outside terminal, connect the lead-in wire of described semiconductor element and described binding post, and by resin-encapsulated body that described semiconductor element, described binding post and described lead-in wire encapsulate with potting resin, it is characterized in that, described semiconductor device also comprises: connect converter section, described semiconductor element and described binding post are carried out distribution by the lead-in wire of straight line by described connection converter section.
According to the second aspect of the utility model embodiment, wherein, described connection converter section has: insulator, the first electrode, the second electrode and inner distribution; Described first electrode is configured on the first surface of described insulator, and described first electrode is electrically connected with the binding post of described outside terminal; Described second electrode is configured on relative with described first surface second of described insulator, and described second electrode is electrically connected with described first electrode by described inner distribution; Wherein, described second electrode is electrically connected with described semiconductor element by described lead-in wire, and described lead-in wire is the distribution of linearity.
According to the third aspect of the utility model embodiment, wherein, described first electrode configures in the mode opposed with described binding post on the direction vertical relative to the primary flat of described semiconductor device.
According to the fourth aspect of the utility model embodiment, wherein, described second electrode configures in mode opposed with semiconductor element on direction vertical with the long limit of described connection converter section on the primary flat of described semiconductor device.
According to the 5th aspect of the utility model embodiment, wherein, described first electrode and described binding post are electrically connected by conductive adhesive.
According to the 6th aspect of the utility model embodiment, wherein, described second electrode and described semiconductor element are electrically connected by the mode of wire bond.
According to the 7th aspect of the utility model embodiment, wherein, the thickness of described connection converter section is 350 microns.
According to the eighth aspect of the utility model embodiment, wherein, described connection converter section is stepped construction.
According to the 9th aspect of the utility model embodiment, wherein, described connection converter section is formed in one structure.
There is provided a kind of electronic equipment, this electronic equipment comprises if the first aspect of above-described embodiment is to the semiconductor device according to any one of the 9th aspect.
The beneficial effects of the utility model are: the semiconductor device of the present embodiment utilizes and connects converter section carries out the lead-in wire of straight line distribution to semiconductor element and binding post, can prevent from producing larger stress at the neck of lead-in wire, improve the reliability of neck.
With reference to explanation hereinafter and accompanying drawing, disclose in detail particular implementation of the present utility model, specifying principle of the present utility model can adopted mode.Should be appreciated that, thus execution mode of the present utility model is not restricted in scope.In the spirit of claims and the scope of clause, execution mode of the present utility model comprises many changes, amendment and is equal to.
The feature described for a kind of execution mode and/or illustrate can use in one or more other execution mode in same or similar mode, combined with the feature in other execution mode, or substitutes the feature in other execution mode.
Should emphasize, term " comprises/comprises " existence referring to feature, one integral piece, step or assembly when using herein, but does not get rid of the existence or additional of one or more further feature, one integral piece, step or assembly.
Accompanying drawing explanation
Included accompanying drawing is used to provide the further understanding to the utility model embodiment, which constituting a part for specification, for illustrating execution mode of the present utility model, and coming together to explain principle of the present utility model with text description.Apparently, the accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.In the accompanying drawings:
Fig. 1 is the schematic diagram of the lead-in wire distribution of semiconductor device in prior art;
Fig. 2 is the schematic diagram of the lead-in wire distribution of semiconductor device in the present embodiment;
Fig. 3 is the configuration schematic diagram of the binding post of the semiconductor device of the present embodiment;
Fig. 4 is the A-A sectional schematic diagram of the connection converter section of the semiconductor device of the present embodiment.
Embodiment
With reference to accompanying drawing, by specification below, aforementioned and further feature of the present utility model will become obvious.In the specification and illustrated in the drawings, specifically disclose particular implementation of the present utility model, which show the some embodiments that wherein can adopt principle of the present utility model, will be appreciated that, the utility model is not limited to described execution mode, on the contrary, the utility model comprises the whole amendments fallen in the scope of claims, modification and equivalent.
Embodiment 1
The utility model embodiment provides a kind of semiconductor device.Fig. 2 is the internal structure schematic diagram of this semiconductor device 200, and as shown in Figure 2, this semiconductor device 200 comprises semiconductor element 201, binding post 202 (as shown in Figure 3), lead-in wire 203 and resin-encapsulated body 204.
Wherein, semiconductor element 201 has multiple, comprises the semiconductor element etc. of semiconductor element and the electric power controlled.The semiconductor element controlled is for controlling the semiconductor element of electric power, and because the semiconductor element controlled is lower than the working temperature of the semiconductor element of electric power, it can be made up of silicon (Si) semiconductor.The semiconductor element of electric power is such as diode, IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), it can be made up of silicon (Si) semiconductor, in addition, it also can by compared with Si semiconductor, can work at high operating temperatures, switch speed is than very fast, and there is low-loss compound semiconductor formation, such as, the compound semiconductor of carborundum (SiC) semiconductor and gallium nitride (GaN) semiconductor etc. is formed.
Wherein, binding post 202 has multiple, and it is the structure of outside terminal in resin-encapsulated body 204, for connecting outside terminal.Fig. 3 is the position view of this binding post 202, and as shown in Figure 3, in the present embodiment, binding post 202 has eight, by this binding post 202, can connect outside terminal.This outside terminal exposes from resin-encapsulated body 204, has binding post 202 in the inside of resin-encapsulated body 204.This outside terminal is processed by the punch process and chemical etching such as pressing the thick tabular sheet material of 0.5mm and is formed, material many uses copper or copper alloy, and surface can be implemented silver-plated.In addition, in the inside of resin-encapsulated body, this binding post 202 is electrically connected with semiconductor element 201 by the mode of wire-bonded.
Wherein, lead-in wire 203 has many, for connecting semiconductor element 201 and binding post 202.This lead-in wire 203 can be the fine rule for being electrically connected, and such as, diameter is the aluminum steel of 250 microns.The metal material that the preferred conductivity of material of this lead-in wire 203 is high, also can use copper material, golden material etc.
Wherein, resin-encapsulated body 204 is for encapsulating this semiconductor element 201, binding post 202 and lead-in wire 203 with potting resin.Resin molding mold and press device can be used as transfer modling resin forming.Such as, in resin-encapsulated body 204, thermosetting epoxy resin is used.In addition, also not brominated halogen-free resin can be used.Thereby, it is possible to raising environmental performance.
In the present embodiment, this semiconductor device 200 also comprises one and connects converter section 205, and as shown in Figure 2, semiconductor element 201 and binding post 202 are carried out distribution by the lead-in wire 203 of straight line by this connection converter section 205.Thereby, it is possible to prevent from producing larger stress at the neck of lead-in wire 203, improve the reliability of neck.Wherein, the mode that semiconductor element 201 can pass through wire bond (wire bonding) or clamp (clip lead) be connected converter section 205 and connect, binding post 202 can by conductive adhesive be connected converter section 205 and be electrically connected.
Fig. 4 is the structural representation of an execution mode of this connection converter section 205, and as shown in Figure 4, this connection converter section 205 has insulator 401, first electrode 402, second electrode 403 and inner distribution 404.
Wherein, insulator 401 constitutes the main structure of this connection converter section 400, insulative resin material.First electrode 402 is configured on the first surface of this insulator 401, and this first electrode 402 is electrically connected with the binding post 202 of outside terminal, second electrode 403 is configured on relative with this first surface second of this insulator 401, and this second electrode 403 is electrically connected with this first electrode 402 by inner distribution 404, and, this second electrode 403 is electrically connected with semiconductor element 201 by above-mentioned lead-in wire 203, and this lead-in wire 203 is the distribution of linearity.Wherein, this insulator 401 is insulative resin material, and this first electrode 402, second electrode 403 and inner distribution 404 are metal material.
In the present embodiment, this first electrode 402 configures in mode opposed with described binding post 202 on the direction vertical relative to the primary flat of semiconductor device.As shown in Figure 4, this first electrode 402 is arranged opposite in directionb with this binding post 202.Thus, realizing in binding post and the process of semiconductor element by straight line distribution, without the need to changing the position of binding post 202.
In the present embodiment, the first electrode 402 and binding post 202 can be electrically connected by conductive adhesive.This conductive adhesive preferably has solder or the silver slurry of good conductivity.In addition, when using solder, environment is considered preferably not containing plumbous (Pb).
In the present embodiment, this second electrode 403 configures in mode opposed with semiconductor element on direction vertical with the long limit connecting converter section on the primary flat of semiconductor device.As shown in Figure 2, the second electrode 403 and semiconductor element 201 arranged opposite on C direction.Thus, because the second electrode 403 and the first electrode 402 are electrically connected by inner distribution 403, and the first electrode 402 and binding post 202 are electrically connected, therefore the electrical connection of binding post 202 and semiconductor element 201 is achieved, and due to semiconductor element 201 and the second electrode 403 arranged opposite on C direction, achieve the straight line distribution of semiconductor element and binding post, and without the need to changing the position of semiconductor element.
In the present embodiment, the second electrode 403 has wire bond portion 4031, and thus, this second electrode 403 and semiconductor element 201 can be electrically connected by the mode of wire bond (wire bonding).As other variation of electrical connection, this second electrode 403 and semiconductor element 201 also can be electrically connected by the mode of clamp (clip lead), wherein, the metal material of preferred high conductivity and high thermal conductivity, be conducive to current capacity increase and as heat dissipation path.For the variation of carrying out being electrically connected in the mode of clamp, the electric connecting part of tabular can be connected to power semiconductor element by conductivity sticker, thus, larger electric current can be flow through, in addition, by the heat conduction that produces at power semiconductor element to outside terminal, good radiating effect can be obtained.
In the present embodiment, if the inside distribution 404 connecting converter section 205 is aluminum material, the cross-sectional area of so inner distribution 404 is identical with the cross-sectional area of lead-in wire 203, thus the identical magnitude of current is flow through.During the copper material using current resistor smaller, if same electrical flow, then can reduce the area of the cross section of inner distribution 404.
1. and 2. in the present embodiment, for the binding post of the outside terminal do not used in circuit, binding post as shown in Figure 4, by conductive adhesive and the first Electrode connection, can not carry out inner distribution.Thus, be conducive to connecting the fixing of converter section 205.
In the present embodiment, this connection converter section can be stepped construction, such as its insulator 401 superposes (laminated base plate technology) by multilager base plate and forms, usually, by the manufacturing technology manufacture of expoxy glass multilager base plate, also can use the manufacturing technology manufacture of paper phenol substrate, compared with expoxy glass material, relatively more cheap, there is good processability.In the present embodiment, this connection converter section also can be integrated structure, such as, uses the integrated structure of resin etc. of 3D printing technique.
In the present embodiment, the thickness of this connection converter section 205 is preferably 350 microns, but the present embodiment is not in this, as restriction, also can adopt other thickness according to technological requirement or other demand.
The structure of the connection converter section 205 shown in Fig. 4 just illustrates; the present embodiment is not in this, as restriction; as long as semiconductor element 201 and binding post 202 can be carried out the structure of the connection converter section 205 of distribution with the lead-in wire 203 of straight line, be all contained in the protection range of the application.
The semiconductor device of the present embodiment utilizes and connects converter section carries out the lead-in wire of straight line distribution to semiconductor element and binding post, can prevent from producing larger stress at the neck of lead-in wire, improves the reliability of neck.
Embodiment 2
The utility model embodiment also provides a kind of electronic equipment, and this electronic equipment comprises semiconductor device as described in Example 1.
The electronic equipment of the present embodiment employs the semiconductor device of embodiment 1, the connection converter section of this semiconductor device is utilized semiconductor element and binding post to be carried out to the distribution of the lead-in wire of straight line, can prevent from producing larger stress at the neck of lead-in wire, improve the reliability of neck.
More than being described the utility model in conjunction with concrete execution mode, but it will be apparent to those skilled in the art that these descriptions are all exemplary, is not the restriction to the utility model protection range.Those skilled in the art can make various variants and modifications according to spirit of the present utility model and principle to the utility model, and these variants and modifications are also in scope of the present utility model.

Claims (10)

1. a semiconductor device, described semiconductor device has:
Semiconductor element,
Connect the binding post of outside terminal,
Connect the lead-in wire of described semiconductor element and described binding post, and
By the resin-encapsulated body that described semiconductor element, described binding post and described lead-in wire encapsulate with potting resin,
It is characterized in that, described semiconductor device also comprises: connect converter section,
Described semiconductor element and described binding post are carried out distribution by the lead-in wire of straight line by described connection converter section.
2. semiconductor device according to claim 1, is characterized in that, described connection converter section has: insulator, the first electrode, the second electrode and inner distribution;
Described first electrode is configured on the first surface of described insulator, and described first electrode is electrically connected with the binding post of described outside terminal;
Described second electrode is configured on relative with described first surface second of described insulator, and described second electrode is electrically connected with described first electrode by described inner distribution;
Wherein, described second electrode is electrically connected with described semiconductor element by described lead-in wire, and described lead-in wire is the distribution of linearity.
3. semiconductor device according to claim 2, is characterized in that, described first electrode configures in the mode opposed with described binding post on the direction vertical relative to the primary flat of described semiconductor device.
4. semiconductor device according to claim 2, is characterized in that, described second electrode configures in mode opposed with semiconductor element on direction vertical with the long limit of described connection converter section on the primary flat of described semiconductor device.
5. semiconductor device according to claim 2, is characterized in that, described first electrode and described binding post are electrically connected by conductive adhesive.
6. semiconductor device according to claim 2, is characterized in that, described second electrode and described semiconductor element are electrically connected by the mode of wire bond.
7. semiconductor device according to claim 1, is characterized in that, the thickness of described connection converter section is 350 microns.
8. semiconductor device according to claim 1, is characterized in that, described connection converter section is stepped construction.
9. semiconductor device according to claim 1, is characterized in that, described connection converter section is formed in one structure.
10. an electronic equipment, is characterized in that, described electronic equipment comprises semiconductor device as claimed in any one of claims 1-9 wherein.
CN201420844472.0U 2014-12-25 2014-12-25 Semiconductor device and electronic equipment Active CN204257622U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420844472.0U CN204257622U (en) 2014-12-25 2014-12-25 Semiconductor device and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420844472.0U CN204257622U (en) 2014-12-25 2014-12-25 Semiconductor device and electronic equipment

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CN204257622U true CN204257622U (en) 2015-04-08

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