CN209243158U - A kind of wafer evaporation coating device - Google Patents

A kind of wafer evaporation coating device Download PDF

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Publication number
CN209243158U
CN209243158U CN201821737302.7U CN201821737302U CN209243158U CN 209243158 U CN209243158 U CN 209243158U CN 201821737302 U CN201821737302 U CN 201821737302U CN 209243158 U CN209243158 U CN 209243158U
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China
Prior art keywords
crucible
electron beam
wafer
coating device
evaporation coating
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CN201821737302.7U
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Chinese (zh)
Inventor
白兴军
肖秀光
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BYD Semiconductor Co Ltd
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Ningbo BYD Semiconductor Co Ltd
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Abstract

The utility model provides a kind of wafer evaporation coating device, it include: cavity, electron beam generating apparatus, the first crucible, the second crucible, second crucible is placed in first crucible, and the inner surface of the outer surface of second crucible and first crucible mutually agrees with, below the first crucible setting in the cavity, the electron beam generating apparatus is arranged near the opening of the second crucible, and the high-power electron beam that the electron beam generating apparatus generates focuses in the second crucible.Aforesaid way is isolated evaporation source with the first crucible, enhances the effect to radiate in evaporation process, can effectively reduce and splash source by the way that mutually independent first crucible and the second crucible is arranged;Further, it is also possible to which the second crucible is quickly cleaned and replaced at any time, plant maintenance efficiency can be improved.

Description

A kind of wafer evaporation coating device
Technical field
The utility model relates to field of gas detection, in particular to gas collecting device.
Background technique
In semiconductor crystal wafer manufacturing technology, electron beam evaporation and magnetron sputtering are to form the positive back metal electricity of semiconductor chip The mainstream technology of pole is commonly used to domestic and international wafer factory IC and device manufacture.In electron beam evaporation process, what high voltage generated High-power electron beam focuses in the metal evaporation sources in copper crucible under magnetic fields, liquefies after solid vaporizer is heated and most The surface of vaporization eventually, the wafer of the metal evaporation sources vapor deposition of vaporization above it forms metal film, when metal film reaches certain thickness Stop electron beam heating after degree, and gradually evaporation is completed in cooling.
But the prior art, since the source Ni is sensitive to temperature and impurity, is easy to happen in the evaporation process of the source Ni and splashes source, i.e., When high-power electron beam is focused on the source Ni, the source Ni is splashed in copper crucible implosion, and the Ni of bulky grain is splashed to cavity inner wall and crystalline substance On circle.It is splashed to the Ni of cavity inner wall, cavity and liner can be polluted, needs to remove copper crucible, cavity liner to equipment Carry out cleaning maintenance;It is splashed to the source Ni on wafer, is partially attached on wafer and forms protrusion, wafer is even punched in part. The protrusion formed on wafer will cause tube core and burst apart in scribing, welding process;The tube core at place is punched on wafer by the source Ni, Through scrapping.
Utility model content
The purpose of the utility model is to provide a kind of wafer evaporation coating devices, to solve existing evaporation coating device in evaporation Ni The problem of splashing source is easy to happen when source.
In order to achieve the above object, the utility model provides a kind of wafer evaporation coating device, comprising: cavity, electron beam occur Device, the first crucible, the second crucible, second crucible are placed in first crucible, and the appearance of second crucible The inner surface of face and first crucible mutually agrees with, and lower section, the electron beam occur in the cavity for the first crucible setting Device is arranged near the opening of the second crucible, and the high-power electron beam that the electron beam generating apparatus generates focuses on the second crucible It is interior.
Wafer evaporation coating device according to the present utility model is made by the way that mutually independent first crucible and the second crucible is arranged Evaporation source is isolated with the first crucible, enhances the effect to radiate in evaporation process, can be effectively reduced and be splashed source;Further, it is also possible to The second crucible is quickly cleaned and replaced at any time, plant maintenance efficiency can be improved.
Preferably, the cavity is closed container.
It preferably, further include cooling device, the bottom of the cooling device setting in the cavity, the outer surface of the first crucible It is contacted with the cooling device.
Preferably, top position corresponding with the second crucible is fixed for the wafer being deposited in cavity.
Preferably, evaporation source is placed in second crucible.
Preferably, first crucible is copper crucible.
Preferably, second crucible is molybdenum crucible.
Preferably, first crucible and the second crucible can be separated from each other.
Preferably, the cavity inner wall is provided with the liner for protecting cavity inner wall.
Preferably, including several described electron beam generating apparatus.
Detailed description of the invention
The utility model is above-mentioned and/or additional aspect and advantage from the following description of the accompanying drawings of embodiments will Become obvious and be readily appreciated that, in which:
Fig. 1 is the schematic diagram of the wafer evaporation coating device of an embodiment of the present invention.
Appended drawing reference in specification is as follows:
10, cavity;11, liner;21, the first crucible;22, the second crucible;30, electron beam generating apparatus;31, high energy electron Beam;40, cooling device;50, wafer;60, evaporation source.
Arrow in attached drawing indicates the flow direction of gas.
Specific embodiment
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model Limitation.
Following disclosure provides many different embodiments or example is used to realize the different structure of the utility model.For The disclosure of simplified the utility model, is hereinafter described the component of specific examples and setting.Certainly, they are only and show Example, and purpose does not lie in limitation the utility model.In addition, the utility model can in different examples repeat reference numerals And/or letter.This repetition is for purposes of simplicity and clarity, itself not indicate discussed various embodiments and/or set Relationship between setting.
In the description of the present invention, it should be noted that unless otherwise specified and limited, term " installation ", " phase Even ", " connection ", " connecing " shall be understood in a broad sense, for example, it may be mechanical connection or electrical connection, are also possible to inside two elements Connection, can be directly connected, can also indirectly connected through an intermediary, for those of ordinary skill in the art and Speech, can understand the concrete meaning of above-mentioned term as the case may be.
Referring to following description and drawings, it will be clear that these and other aspects of the embodiments of the present invention.At these In description and attached drawing, some particular implementations in the embodiments of the present invention are specifically disclosed, to indicate to implement this reality With some modes of the principle of novel embodiment, but it is to be understood that the range of the embodiments of the present invention is not limited System.On the contrary, the embodiments of the present invention include all changes fallen within the scope of the spirit and intension of attached claims Change, modification and equivalent.
As shown in Figure 1, an embodiment of the present invention provides a kind of wafer evaporation coating device, comprising: cavity 10, electron beam hair Generating apparatus 30, the first crucible 21, the second crucible 22, second crucible 22 are placed in above-mentioned first crucible 21, and described The outer surface of two crucibles 22 and the inner surface of first crucible 21 mutually agree with, and first crucible 21 is arranged in cavity 10 Lower section, the electron beam generating apparatus 30 is arranged near the opening of the second crucible 22, and the electron beam generating apparatus 30 produces Raw high-power electron beam 31 focuses in the second crucible 22.
The cavity 10 is closed container, and in the work of wafer evaporation coating device, the cavity 10 is closed;When wafer steams When plating appts are in off working state, the cavity 10 is openable the work such as to be cleared up inside, safeguards, debugs to facilitate. Liner 11 is provided on the inner wall of cavity 10, the liner 11 is used to protect the inner wall of cavity 10.
As shown in Figure 1, the wafer evaporation coating device that an embodiment of the present invention provides further includes cooling device 40, it is described cold But the bottom in cavity 10 is arranged in device 40, and the outer surface of the first crucible 21 is contacted with the cooling device.It is practical new at this In one embodiment of one embodiment of type, electron beam generating apparatus 30 is arranged on cooling device 40.
Top position corresponding with the second crucible 22 is fixed for the wafer 50 of vapor deposition in cavity 10, and evaporation source 60 is placed In the second crucible 22.First crucible 21 and the second crucible 22 can be separated from each other.The one of an embodiment of the present invention In embodiment, first crucible 21 is copper crucible, and second crucible 22 is molybdenum crucible.
Below in conjunction with a kind of Detailed description of the invention working principle of wafer evaporation coating device provided by the utility model.
Evaporation source 60 is placed in the second crucible 22 first, then the second crucible for carrying evaporation source 60 is placed in first In crucible 21, following electron beam generating apparatus 30 generates high-power electron beam 31, and high-power electron beam 31 is focused in evaporation source 60 On.It liquefies after evaporation source 60 is heated and finally vaporizes, the surface of the wafer of the vapor deposition of evaporation source 60 of vaporization above it forms gold Belong to film, stops generating high-power electron beam 31 after metal film reaches certain thickness, and gradually cool down.
By the above-mentioned means, mutually independent first crucible 21 of setting and the second crucible 22, make evaporation source 60 and the first earthenware Crucible 21 is isolated, and is enhanced the effect to radiate in evaporation process, can be effectively reduced and splash source;Further, it is also possible at any time to the second earthenware Crucible 22 is quickly cleaned and is replaced, and plant maintenance efficiency can be improved.
The above description is only the embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all Using equivalent structure or equivalent flow shift made by the utility model description, it is applied directly or indirectly in other phases The technical field of pass, is also included in the patent protection scope of the utility model.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example Point is contained at least one embodiment or example of the utility model.In the present specification, to the schematic table of above-mentioned term Stating may not refer to the same embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be It can be combined in any suitable manner in any one or more embodiment or examples.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is by appended claims and its equivalent limits.

Claims (10)

1. a kind of wafer evaporation coating device characterized by comprising cavity, electron beam generating apparatus, the first crucible, the second crucible, Second crucible is placed in first crucible, and the inner surface of the outer surface of second crucible and first crucible Mutually agree with, the opening of the second crucible is arranged in lower section, the electron beam generating apparatus in the cavity for the first crucible setting Near, the high-power electron beam that the electron beam generating apparatus generates focuses in the second crucible.
2. wafer evaporation coating device according to claim 1, which is characterized in that the cavity is closed container.
3. wafer evaporation coating device according to claim 1, which is characterized in that it further include cooling device, the cooling device Bottom in the cavity is set, and the outer surface of the first crucible is contacted with the cooling device.
4. wafer evaporation coating device according to claim 1, which is characterized in that top is corresponding with the second crucible in cavity Position is fixed for the wafer of vapor deposition.
5. wafer evaporation coating device according to claim 4, which is characterized in that evaporation source is placed in second crucible.
6. wafer evaporation coating device according to claim 1, which is characterized in that first crucible is copper crucible.
7. wafer evaporation coating device according to claim 1, which is characterized in that second crucible is molybdenum crucible.
8. wafer evaporation coating device according to claim 1, which is characterized in that first crucible and the second crucible can be mutual Separation.
9. wafer evaporation coating device according to claim 1, which is characterized in that the cavity inner wall is provided with for protecting chamber The liner of internal wall.
10. wafer evaporation coating device according to claim 1, which is characterized in that filled including electron beam described in several It sets.
CN201821737302.7U 2018-10-25 2018-10-25 A kind of wafer evaporation coating device Active CN209243158U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821737302.7U CN209243158U (en) 2018-10-25 2018-10-25 A kind of wafer evaporation coating device

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Application Number Priority Date Filing Date Title
CN201821737302.7U CN209243158U (en) 2018-10-25 2018-10-25 A kind of wafer evaporation coating device

Publications (1)

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CN209243158U true CN209243158U (en) 2019-08-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117888061A (en) * 2024-03-14 2024-04-16 天水天光半导体有限责任公司 Silver metal evaporation vacuum coating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117888061A (en) * 2024-03-14 2024-04-16 天水天光半导体有限责任公司 Silver metal evaporation vacuum coating method
CN117888061B (en) * 2024-03-14 2024-05-24 天水天光半导体有限责任公司 Silver metal evaporation vacuum coating method

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Effective date of registration: 20191230

Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong

Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd.

Address before: 315800 No. 155 West Mount Lu Road, Ningbo Free Trade Zone, Zhejiang

Patentee before: NINGBO BYD SEMICONDUCTOR Co.,Ltd.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee after: BYD Semiconductor Co.,Ltd.

Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd.

Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee after: BYD Semiconductor Co.,Ltd.

Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province

Patentee before: BYD Semiconductor Co.,Ltd.