CN209207245U - A kind of device improving single germanium wafer total thickness variations - Google Patents

A kind of device improving single germanium wafer total thickness variations Download PDF

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Publication number
CN209207245U
CN209207245U CN201822185751.1U CN201822185751U CN209207245U CN 209207245 U CN209207245 U CN 209207245U CN 201822185751 U CN201822185751 U CN 201822185751U CN 209207245 U CN209207245 U CN 209207245U
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China
Prior art keywords
fixed disk
piston
total thickness
threaded hole
head tank
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CN201822185751.1U
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Chinese (zh)
Inventor
唐安泰
李建平
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Kuiming Huiquan Gaochun Semiconductor Material Co Ltd
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Kuiming Huiquan Gaochun Semiconductor Material Co Ltd
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Abstract

The utility model discloses a kind of devices for improving single germanium wafer total thickness variations, including fixed disk, adsorption hole is offered at the top of the fixed disk, the adsorption hole is communicated with head tank far from one end of fixed panel surface, the head tank is provided with inside fixed disk, the fixed disk top edge is fixedly connected with retainer plate, head tank inner wall side offers piston groove, the piston groove inner wall offers threaded hole far from one end of head tank, the threaded hole runs through fixed disk, the piston groove inner wall slidably connects piston, the piston is rotatably connected to piston rod close to the side of threaded hole, the piston rod through fixed disk and is extended to outside fixed disk by threaded hole, the utility model relates to germanium single crystal technical fields.A kind of device improving single germanium wafer total thickness variations, can make chassis and closer without connecting between wax pad, and no wax pad is avoided to be displaced, improve single-chip total thickness variations, easy to operate, work efficiency is high.

Description

A kind of device improving single germanium wafer total thickness variations
Technical field
The utility model relates to germanium single crystal technical field, specially a kind of device for improving single germanium wafer total thickness variations.
Background technique
Germanium single crystal is free from the germanium crystal of big angle crystal boundary or twin, is in diamond lattice structure, is important semiconductor Material, germanium single crystal product include solar energy rank germanium single crystal, infrared grade germanium single crystal and detector grade germanium single crystal, infrared grade germanium list again Crystalline substance is used to prepare infrared window, and the basic material of the optical components such as infrared lens, semiconductor device germanium single crystal is for making respectively Transistorlike and basis material used for solar batteries, detector grade germanium single crystal are used to prepare high-resolution γ radiation detecting instrument, germanium Monocrystalline is to melt germanium ingot as raw material using area, the germanium single crystal prepared with the methods of vertical pulling method (CZ) method or vertical gradient method (VGF method) Body, vertical pulling method (CZ) are first to carry out equipment components, alloy silica crucible, HpGe ingot and seed crystal at cleaning before crystal pulling Reason, by HpGe through ingredient and doping, is added in the alloy silica crucible of single crystal growing furnace, then evacuated, fusing, in the argon of circulation Under gas atmosphere, cloud seeding shouldering and ending, during the isodiametric growth of crystal, control pulling rate, crucible and seed crystal revolving speed etc. are arranged It applies, and automatically controlling the technologies such as furnace temperature and single crystal diameter makes it obtain the product of uniform diameter, is detected, is weighed, and germanium is made Monocrystalline finished product, germanium are primarily used to manufacture infrared optical lens in infrared optics and protect the infrared light of infrared optical lens Window is learned, 60% or more low and middle-end infrared optical lens are germanium single crystal manufacture, and 50% high-end infrared optical lens are germanium single crystal Manufacture, germanium material in infrared lens using very extensive, in civilian infrared lens, in small-bore camera lens list set consumption germanium amount 250 grams or so, heavy caliber is 2500 grams or so, and military infrared window is mainly used on aircraft and armored combat vehicle, especially directly The application for rising the very big infrared optical lens of dosage on aircraft includes Military Application and civilian.Germanium single crystal needs when being made into single-chip Sanding and polishing is easy to produce gap due to the defective tightness contacted between no wax pad and polishing chassis during polishing, and And displacement is easy without wax pad in process and causes the thickness change of single germanium wafer larger.
(1) the technical issues of solving
In view of the deficiencies of the prior art, the utility model provides the device for improving single germanium wafer total thickness variations, solves Germanium single crystal needs sanding and polishing when being made into single-chip, due to contacting between no wax pad and polishing chassis during polishing Defective tightness, be easy to produce gap, and in process without wax pad be easy displacement cause the thickness change of single germanium wafer compared with Big problem.
(2) technical solution
In order to achieve the above object, the utility model is achieved by the following technical programs: a kind of improvement single germanium wafer is total The device of thickness change, including fixed disk, the fixed disk top offer adsorption hole, and the adsorption hole is far from fixed panel surface One end be communicated with head tank, the head tank is provided with inside fixed disk, and the fixed disk top edge is fixedly connected with solid Fixed circle, head tank inner wall side offer piston groove, and the piston groove inner wall offers screw thread far from one end of head tank Hole, the threaded hole run through fixed disk, and the piston groove inner wall slidably connects piston, and the piston is close to the side of threaded hole It is rotatably connected to piston rod, the piston rod through fixed disk and is extended to outside fixed disk, the piston rod by threaded hole One end outside fixed disk is fixedly connected with rotating disc.
Preferably, no wax pad is connected at the top of the fixed disk.
Preferably, the internal diameter of the retainer plate is adapted with the diameter of no wax pad.
Preferably, the thickness of the retainer plate is 2/3rds of no wax mat thickness, inside the head tank and adsorption hole It is each filled with water.
Preferably, the adsorption hole is annular spread.
Preferably, external screw thread compatible with threaded hole is offered on the piston rod and is threadedly coupled with threaded hole.
(3) beneficial effect
The utility model provides a kind of device for improving single germanium wafer total thickness variations.Have it is following the utility model has the advantages that
(1), a kind of device for improving single germanium wafer total thickness variations, by offering adsorption hole at the top of fixed disk, institute It states adsorption hole and is communicated with head tank far from one end of fixed panel surface, the head tank is provided with inside fixed disk, the pressure Slot inner wall side offers piston groove, and the piston groove inner wall offers threaded hole, the threaded hole far from one end of head tank Through fixed disk, the piston groove inner wall slidably connects piston, and the piston is rotatably connected to work close to the side of threaded hole Stopper rod, the piston rod through fixed disk and are extended to outside fixed disk by threaded hole, and fixed panel surface will be attached to without wax pad, Drawn water the hydraulic pressure increased inside head tank by piston, so that fixed panel surface will be adsorbed on without wax pad, has been reached and has been avoided no wax Gap is generated between pad and chassis influences the purpose of single-chip thickness change.
(2), a kind of device for improving single germanium wafer total thickness variations, is fixedly connected with solid by fixed disk top edge Fixed circle, the internal diameter of the retainer plate are adapted with the diameter of no wax pad, and the thickness of the retainer plate is three points of no wax mat thickness Two, no wax pad can be fixed, achieved the purpose that avoid no wax pad to be displaced, and device is easy to operate, saves the time, production effect Rate is relatively high.
Detailed description of the invention
Fig. 1 is the utility model schematic front view;
Fig. 2 is the utility model schematic top plan view;
The position Fig. 3 the utility model piston structure schematic diagram.
In figure: 1 fixed disk, 2 adsorption holes, 3 head tanks, 4 retainer plates, 5 piston grooves, 6 threaded holes, 7 pistons, 8 piston rods, 9 Rotating disc, 10 are without wax pad.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1-3 is please referred to, the utility model provides a kind of technical solution: a kind of dress improving single germanium wafer total thickness variations It sets, including fixed disk 1, offers adsorption hole 2 at the top of fixed disk 1, be used cooperatively and facilitate no wax with head tank 3 and piston structure Pad 10 is adsorbed on 1 surface of fixed disk, and adsorption hole 2 is communicated with head tank 3 far from the one end on 1 surface of fixed disk, and head tank 3 is provided with Inside fixed disk 1,1 top edge of fixed disk is fixedly connected with retainer plate 4, and control is facilitated to avoid its displacement, pressure without wax pad 10 3 inner wall side of slot offers piston groove 5, and 5 inner wall of piston groove offers threaded hole 6 far from one end of head tank 3, and threaded hole 6 passes through Price fixing 1 is fastened, 5 inner wall of piston groove slidably connects piston 7, and piston 7 is rotatably connected to piston rod 8 close to the side of threaded hole 6, Piston rod 8 through fixed disk 1 and is extended to outside fixed disk 1 by threaded hole 6, and piston rod 8 is located at one end outside fixed disk 1 It is fixedly connected with rotating disc 9.
No wax pad 10 is connected at the top of fixed disk 1.
The internal diameter of retainer plate 4 is adapted with the diameter of no wax pad 10.
The thickness of retainer plate 4 is that no wax pads 2/3rds of 10 thickness, is each filled with water inside head tank 3 and adsorption hole 2.
Adsorption hole 2 is annular spread.
It offers and the compatible external screw thread of threaded hole 6 and is threadedly coupled with threaded hole 6 on piston rod 8.
In use, injecting water at the top of fixed disk 1, no wax pad 10 is put into inside the retainer plate 4 at 1 top of fixed disk and is compressed And turntable 9 is rotated, piston rod 8 and piston 7 are pulled outwardly, will be inhaled without wax pad 10 to the hydraulic pressure inside head tank 3 by adsorption hole 2 Mechanization burnishing device can tightly be placed a device into.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions.By sentence " element limited including one ..., it is not excluded that There is also other identical elements in the process, method, article or apparatus that includes the element ".
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is by appended claims.

Claims (6)

1. a kind of device for improving single germanium wafer total thickness variations, including fixed disk (1), it is characterised in that: the fixed disk (1) Top offers adsorption hole (2), and the adsorption hole (2) is communicated with head tank (3) far from the one end on fixed disk (1) surface, described Head tank (3) is provided with fixed disk (1) inside, and fixed disk (1) top edge is fixedly connected with retainer plate (4), the pressure Power slot (3) inner wall side offers piston groove (5), and piston groove (5) inner wall offers screw thread far from one end of head tank (3) Hole (6), the threaded hole (6) run through fixed disk (1), and piston groove (5) inner wall slidably connects piston (7), the piston (7) side close to threaded hole (6) is rotatably connected to piston rod (8), and the piston rod (8) is by threaded hole (6) through fixation Disk (1) simultaneously extends to fixed disk (1) outside, and the piston rod (8) is located at the external one end of fixed disk (1) and is fixedly connected with rotation Disk (9).
2. a kind of device for improving single germanium wafer total thickness variations according to claim 1, it is characterised in that: the fixation No wax pad (10) is connected at the top of disk (1).
3. a kind of device for improving single germanium wafer total thickness variations according to claim 2, it is characterised in that: the fixation The internal diameter of circle (4) is adapted with the diameter of no wax pad (10).
4. a kind of device for improving single germanium wafer total thickness variations according to claim 2, it is characterised in that: the fixation The thickness for enclosing (4) is 2/3rds of no wax pad (10) thickness, is each filled with water inside the head tank (3) and adsorption hole (2).
5. a kind of device for improving single germanium wafer total thickness variations according to claim 1, it is characterised in that: the absorption Hole (2) is annular spread.
6. a kind of device for improving single germanium wafer total thickness variations according to claim 1, it is characterised in that: the piston External screw thread compatible with threaded hole (6) is offered on bar (8) and is threadedly coupled with threaded hole (6).
CN201822185751.1U 2018-12-20 2018-12-20 A kind of device improving single germanium wafer total thickness variations Active CN209207245U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201822185751.1U CN209207245U (en) 2018-12-20 2018-12-20 A kind of device improving single germanium wafer total thickness variations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201822185751.1U CN209207245U (en) 2018-12-20 2018-12-20 A kind of device improving single germanium wafer total thickness variations

Publications (1)

Publication Number Publication Date
CN209207245U true CN209207245U (en) 2019-08-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201822185751.1U Active CN209207245U (en) 2018-12-20 2018-12-20 A kind of device improving single germanium wafer total thickness variations

Country Status (1)

Country Link
CN (1) CN209207245U (en)

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