CN209020879U - The cleaning device of mask defect - Google Patents
The cleaning device of mask defect Download PDFInfo
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- CN209020879U CN209020879U CN201821506854.7U CN201821506854U CN209020879U CN 209020879 U CN209020879 U CN 209020879U CN 201821506854 U CN201821506854 U CN 201821506854U CN 209020879 U CN209020879 U CN 209020879U
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Abstract
The utility model provides a kind of cleaning device of mask defect, cleaning device is for cleaning the defect to be cleaned on light shield to be processed, defect to be cleaned is formed in the surface to be treated of light shield to be processed, cleaning device includes: defect absorbent module, there is spacing between defect absorbent module and surface to be treated, and defect absorbent module is based on electrostatic induction and adsorbs defect to be cleaned, to realize the cleaning of light shield to be processed.The utility model is in the defect removal process of semiconductor light shield; the removal of mask defect is carried out using nondestructive electrostatic absorption principle and equipment; to achieve the purpose that photomask clean; using the embodiment of the utility model; the removal of mask defect not only may be implemented; the protective film of light shield can also be prevented by fold or breakage in removal process; protective film is also possible to prevent simultaneously to be scratched; the comprehensive cleaning of mask defect can also be further realized; device is easy; cleaning process is simple and direct, and cleaning speed is fast.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, more particularly to a kind of cleaning device of mask defect.
Background technique
In the digitized epoch, many electrical appliances, article are all manipulated with high-tech IC chip, to reach automatic
The purpose of change, and IC chip is mainly formed with the semiconductor integrated circuit of superprecision, manufacturing process mainly utilizes light shield in nothing
It in the environment of dirt, is completed using the lamination operation that the board of high precision carries out high precision to wafer, workshop, board
Manufacturing cost is relatively expensive, and therefore, during manufacturing chip, the yield for being dedicated to improving light shield becomes this field skill
Art personnel project more important at present.
In semiconductor production manufacture, because board factor or human factor inevitably will appear light shield and be exceeded specification
Particle pollution, especially on reticle protection film formed grain defect (defect), only timely to those particles into
Row processing can just carry out subsequent production.However, the pollution particle on light shield overlay film is difficult to remove in the industry at present, it is more
Light shield can only be returned to factory's cleaning or repairing when number, reduce the production efficiency of product to a certain extent.
Therefore, the cleaning device and mask defect clean method of a kind of mask defect how are provided, to solve the prior art
Present in the above problem be necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of cleanings of mask defect
Device, for solving, the defect on light shield in the prior art is difficult to remove and the mode of existing removal mask defect is be easy to cause
Slow etc. the problem of reticle protection film damage, cleaning speed.
In order to achieve the above objects and other related objects, the utility model provides a kind of cleaning device of mask defect, uses
Cleaned in the defect to be cleaned on light shield to be processed, the defect to be cleaned be formed in the light shield to be processed wait locate
It manages on surface, the cleaning device includes:
Defect absorbent module, using the defect absorbent module to the defect to be cleaned in the surface to be treated into
When row cleaning, the defect absorbent module is arranged to have spacing between the surface to be treated, and the defect is adsorbed
Component is based on electrostatic induction and adsorbs the defect to be cleaned, to realize the cleaning of the light shield to be processed.
As a kind of optinal plan of the utility model, the defect absorbent module includes electrostatic chuck, the sanitizer cartridge
Setting further includes power supply device, wherein the electrostatic chuck is set to above the surface to be treated, the power supply device with it is described
Electrostatic chuck electrical connection, so that generating adsorption charge on the electrostatic chuck, the electrostatic chuck is based on the adsorption charge
Electrostatic induction adsorb the defect to be cleaned.
As a kind of optinal plan of the utility model, the light shield to be processed includes protective film, described to be cleaned scarce
It falls into and is formed on the protective film, the surface that the protective film is formed with the defect to be cleaned constitutes the table to be processed
Face, wherein the shape of the electrostatic chuck and the shape of the protective film are generally in identical.
As a kind of optinal plan of the utility model, the size of the electrostatic chuck is beyond the protection on corresponding direction
The 5%-10% of film dimensions；The material of the electrostatic chuck includes metal.
As a kind of optinal plan of the utility model, the light shield to be processed further includes substrate, mask pattern and ring
Shape frame, wherein the mask pattern and the annular peripheral frame are set to the substrate surface, and the annular peripheral frame is located at institute
State mask pattern periphery, the protective film be set to side of the annular peripheral frame far from the substrate and with the annular edge
Frame and the substrate form a cavity.
As a kind of optinal plan of the utility model, the defect to be cleaned is not charged, controls the electrostatic chuck and produces
It is raw to adsorb positive charge and adsorb any one in negative electrical charge.
As a kind of optinal plan of the utility model, between the defect absorbent module and the surface to be treated between
Away between 1mm-10mm.
As a kind of optinal plan of the utility model, the cleaning device further includes static eraser, to eliminate
State the electrostatic on light shield to be processed.
As described above, the cleaning device of the mask defect of the utility model, has the advantages that
The utility model provides the cleaning device and clean method of a kind of mask defect, so that in the defect of semiconductor light shield
In removal process, the removal of mask defect is carried out using nondestructive electrostatic absorption principle and equipment, to reach light shield
The removal of mask defect not only may be implemented using the embodiment of the utility model in clean purpose, can also be in removal process
It prevents the protective film of light shield by fold or breakage, while being also possible to prevent protective film and being scratched, it can also be further real
The comprehensive cleaning of existing mask defect, device is easy, and cleaning process is simple and direct, and cleaning speed is fast.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of the cleaning device of mask defect provided by the utility model.
Fig. 2 is shown as the process flow chart of the clean method of mask defect provided by the utility model.
Fig. 3 is shown as showing electrostatic chuck generation adsorption charge in the clean method of mask defect provided by the utility model
It is intended to.
Fig. 4 is shown as in the clean method of the mask defect of the utility model showing based on electrostatic induction absorption defect to be cleaned
It is intended to.
Fig. 5 is shown as carrying out static elimination using ion wind apparatus in the clean method of the mask defect of the utility model
Diagram.
Fig. 6 is shown as carrying out the mode of mask defect removal in the utility model comparative example.
Component label instructions
100 light shields to be processed
100a surface to be treated
101 protective films
102 substrates
103 mask patterns
104 annular peripheral frames
200 defects to be cleaned
301 defect absorbent modules
302 power supply devices
401 adsorption charges
402 charge inducings
500 static erasers
S1~S2 step 1) is to step 2)
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Fig. 1 is please referred to Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though it is only shown with related component in the utility model rather than when according to actual implementation in diagram
Component count, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout form may also be increasingly complex.
As shown in Figure 1, the utility model provides a kind of cleaning device of mask defect, for light shield 100 to be processed
Defect to be cleaned 200 cleaned, the defect 200 to be cleaned is formed in the surface to be treated of the light shield to be processed 100
On 100a, the cleaning device includes:
Defect absorbent module 301, using the defect absorbent module 301 to described on the surface to be treated 100a to
When cleaning defect is cleaned, the defect absorbent module 301 is arranged to have spacing between the surface to be treated, and
The defect absorbent module 301 is based on electrostatic induction and adsorbs the defect 200 to be cleaned, to realize the clear of the light shield to be processed
It is clean.
Specifically, the pollution particle provided on a kind of pair of light shield in the utility model carries out clean device, i.e., in figure
Defect to be cleaned 200 on the light shield to be processed 100 is removed, wherein the cleaning device of the utility model is based on electrostatic
The mode of induction absorption removes the defect to be cleaned 200, that is to say, that in the utility model, the light shield 100 to be processed has
There is the surface to be treated 100a to be formed and need to be cleaned defect 200, the defect absorbent module 301 passes through electrostatic absorption principle, will
The absorption of defect to be cleaned 200 on the light shield to be processed 100 is got up, thus by it from the table to be processed of light shield 100 to be processed
It is removed on the 100a of face, reaches the clean purpose of light shield to be processed, be based on aforesaid way, the mode of Electrostatic Absorption not only can be real
Existing mask defect effectively removes, and reduction is injured caused by light shield to be processed, can also realize that large area removes defect comprehensively,
Reach comprehensive clean purpose, improves defect removal efficiency.Wherein, Electrostatic Absorption refers to: the object of electrostatic is had when one
Close to another not the object of static electrification when, due to electrostatic induction, not the interior of articles of electrostatic close to static electrification object one
Side can gather with the polar charge of opposite charge entrained by charged object (like charges that the other side generates identical quantity), by
It attracts each other in the charges of different polarity, " Electrostatic Absorption " phenomenon will be shown.It is in one example, described to clear using aforesaid way
The partial size of clean defect is greater than 40 μm, by the way of Electrostatic Absorption removal in the removal of the defect to be cleaned 200 may be implemented
Rate reaches 95% or more.In addition, being arranged to the defect absorbent module 301 between having between the surface to be treated 100a
Away from mode can be by manually adjusting when in use, be also possible to be adjusted by modes such as adjustable supports.
In one example, as shown in Figure 1, the defect absorbent module 301 includes electrostatic chuck, the cleaning device is also wrapped
Include power supply device 302, wherein the electrostatic chuck 301 is set to above the surface to be treated 100a, the power supply device
302 are electrically connected with the electrostatic chuck, so that generating adsorption charge 401 on the electrostatic chuck, the electrostatic chuck is based on
The defect 200 to be cleaned is adsorbed in the electrostatic induction of the adsorption charge.
Specifically, in this example, a kind of structure of defect absorbent module 301 is provided, can be electrostatic chuck 301,
Wherein, the top of the light shield to be processed 100 is arranged in the electrostatic chuck 301, is preferably provided at the light shield to be processed 100
The surface to be treated 100a for needing to carry out defect removal surface, with need to remove defect region up and down it is corresponding, thus
Be conducive to the progress and its control of Electrostatic Absorption process, the defect 200 to be cleaned is located at the upper table of the surface to be treated of light shield
Face, and between the electrostatic chuck 301 and the surface to be treated 100a have spacing, i.e., the described electrostatic chuck 301 with it is described
There is spacing, the power supply device 302 that the sanitizer cartridge centers can be by the side of energization between defect 200 to be cleaned
Formula makes to form adsorption charge 401 on the electrostatic chuck 301, with the absorption for defect 200 to be cleaned.
It as an example, the material of the electrostatic chuck 301 includes metal, such as can be aluminium, copper, may be implemented described
Adsorption charge 401 is generated under the action of power supply device 302.
As an example, the light shield to be processed 100 includes protective film 101, the defect 200 to be cleaned is formed in described
On protective film 101, the surface that the protective film 101 is formed with the defect to be cleaned constitutes the surface to be treated
100a, wherein the shape of the electrostatic chuck 301 and the shape of the protective film 101 are generally in identical, and the electrostatic chuck
5%-10% of 301 size beyond 101 size of protective film on corresponding direction.
Specifically, in one example, being provided with protective film (Pellicle) 101, light shield on the light shield 100 to be processed
It is contaminated that protective film 101 can prevent light shield, for example, prevent outer boundry particle from falling on the active graphical region of light shield, light shield
Protective film 101 is usually polymer (polymer) material, such as nitrocellulose or fluoride material are made, can be by solid
The edge of reticle protection film 101 is pasted on the edge of light shield by body viscose glue (glue) etc., effective on light shield to protect
Graphics field.In addition, the defect 200 to be cleaned is formed on the surface of the protective film 101, thus institute in the example
The formation for stating protective film 101 has surface to be treated of the surface of the defect to be cleaned 200 as the light shield 100 to be processed
100a.In addition, the thickness of the protective film 101 is preferably between 280nm-810nm in an optional example
Between 350nm-600nm, wherein herein " between ... between " refer to the numberical range including both ends endpoint value.
Specifically, in an optional example, it is described when the defect absorbent module 301 is selected as the electrostatic chuck
The shape of electrostatic chuck and the shape of the protective film 101 are generally in identical, that is, the shape of the protective film 101 if it is
Square, then the shape of the electrostatic chuck 301 is also provided with into square, to be conducive to the progress of Electrostatic Absorption process, mentions
High Electrostatic Absorption efficiency, in addition, preferably exceeding the ruler of the protective film 101 on corresponding direction for the size of electrostatic chuck
Very little 5%-10%, for example, if the shape of the protective film 101 is rectangle, the shape of the electrostatic chuck is also
Rectangle, and the lower in shape of the two corresponds to each other, that is to say, that the long side of the electrostatic chuck and the protective film 101
Long side correspondence is corresponding up and down, short side is also corresponding up and down on position, wherein the long side both ends of the electrostatic chuck exceed
101 long side a distance s of protective film, as shown in Figure 1, in one example, distance s is between 101 size of protective film
5%-10%, so that the protective film 101 uniform comprehensive stress is protected while realizing Electrostatic Absorption, in an example
In, the shape of the electrostatic chuck is square, and the side length of the electrostatic chuck is between 10cm-20cm, the example selection
For 15.24cm.
As an example, the light shield to be processed 100 further includes substrate 102, mask pattern 103 and annular peripheral frame 104,
In, the mask pattern 103 and the annular peripheral frame 104 are set to 102 surface of substrate, and the annular peripheral frame 104
In 103 periphery of mask pattern, the protective film 101 is set to one of the annular peripheral frame 104 far from the substrate 102
Side and a cavity is formed with the annular peripheral frame 104 and the substrate 102.
Specifically, in this example, it can be quartz glass substrate or glass of receiving that the substrate 102, which includes transparent substrate,
Substrate, the edge of the protective film 101 can be the one end for being adhered to the annular peripheral frame 104, the annular peripheral frame 104
Opposite other end can be adhered on the substrate 102, thus the protective film 101 and the annular peripheral frame 104 and
The substrate 102 forms a cavity, to protect the mask pattern 103 being located in cavity, wherein show further alternative
In example, using when using being adsorbed by the way of electrostatic chuck, the size of the electrostatic chuck is less than described on corresponding direction
The size of substrate, thus influence and damage during preventing Electrostatic Absorption to whole light shield bring electrostatic interaction to be processed
Deng.
As an example, spacing between the defect absorbent module 301 and the surface to be treated between 1mm-10mm it
Between.
Specifically, in the example, between controlling between the defect absorbent module 301 and the surface to be treated 100a
Away from, namely the spacing between the defect absorbent module 301 and the defect to be cleaned is controlled, when the defect absorbent module
301 be electrostatic chuck 301 when, spacing of the spacing between the electrostatic chuck 301 and the surface to be treated 100a, separately
Outside, when the defect to be cleaned is located at 101 surface of protective film, which can be the close institute of the electrostatic chuck
It states the sucker suction surface of protective film 101 and is formed with the distance between 101 surface of the protective film of defect to be cleaned,
On the one hand the setting of above-mentioned spacing can be conducive to carry out mechanical protection to light shield to be processed and the protective film, prevent institute
It states defect absorbent module and mechanical damage is caused to the protective film, in addition, being conducive to the progress of Electrostatic Absorption, improve electrostatic and inhale
Attached efficiency, in another aspect, can also be conducive to alleviate the electrostatic injury that the light shield to be processed is subject to.Wherein, in one example,
Shown in the d of the spacing as shown in figure 1, between 1mm-10mm, it is preferably between 3mm-8mm.
As an example, the cleaning device of the mask defect further includes static eraser 500, it is described to be processed to remove
Electrostatic on light shield 100.
Specifically, such as static elimination fills as shown in figure 5, in one example, also setting up a static eraser 500
Setting 500 can be ion wind apparatus, such as ion fan, carry out Electrostatic Absorption remove on the light shield to be processed 100 to clear
After clean defect 200, for eliminating electrostatic remaining on the light shield to be processed 100, prevent electrostatic from damaging to light shield,
In, in an optional example, time that the ion fan is persistently dried is set between 5s-120s, is preferably between 20s-
Between 100s.In addition, the setting for the static eraser 500, can be fixed on mask stage, in Electrostatic Absorption
The step of defect directly carries out electrostatic removal later is removed, can also be arranged by extra means in the light shield 100 to be processed
Periphery, the bottom reception ion wind of the substrate from the light shield 100 to be processed such as may be implemented, in addition, the static elimination
Device can also be rotary setting, i.e. static eraser is arranged on a bracket, and the static eraser can be around described
Axis on bracket is rotated, to realize comprehensive electrostatic removal of the light shield to be processed.
In addition, it is necessary to explanation, using the mask defect cleaning device of the utility model, it can solve many defect removals
The problems in technique, many defects being such as purged using the mode of wind or manpower during particle, can solve light shield
On pollution particle be often difficult to remove, especially removal process is easy to the problems such as damaging to the protective film of light shield,
Such as using high pressure air rifle to blow the mode that high pressure gas removes the defect on light shield, high pressure gas improper use is easy to light
Cover protective film (Pellicle) causes fold or breakage, for using manpower to control the mode that hair provokes mask defect,
Manpower control hair, which chooses defect, to be removed, and is easy to cause light shield overlay film scratch, and zonal sweep-out method is not as comprehensively
Property cleaning it is quick, and use the cleaning device of the utility model, solve high pressure gas and fold or broken is caused to protective film
The defect of damage solves hair and causes cleaning region during scratch and hair removal defect small light shield overlay film, and speed is slow
The problems such as.
In addition, as shown in Figure 2-5, the utility model also provides a kind of clean method of mask defect, wherein the cleaning
Method preferably uses the cleaning device of the mask defect of the utility model to be cleaned, and the clean method includes the following steps:
Firstly, as shown in the S1 in Fig. 2, step 1) is carried out, light shield 100 to be processed is provided, and the light shield to be processed
Defect 200 to be cleaned is formed on surface to be treated 100a；
Specifically, providing the light shield to be processed 100 for needing to carry out defect removal in the step, wherein the light to be processed
The surface that cover 100 is formed with defect 200 to be cleaned is the surface to be treated 100a of light shield to be processed.
In one example, it is provided with protective film (Pellicle) 101 on the light shield to be processed 100, reticle protection is thin
It is contaminated that film 101 can prevent light shield, for example, prevent outer boundry particle from falling on the active graphical region of light shield, light shield protective film
101 be usually polymer (polymer) material, such as nitrocellulose or fluoride material are made, and can pass through solid glue
(glue) etc. the edge of reticle protection film 101 is pasted on the edge of light shield, to protect the active graphical area on light shield
Domain.In the example, the defect 200 to be cleaned is formed on the surface of the protective film 101, thus the protective film
101 formation has surface to be treated 100a of the surface of the defect to be cleaned 200 as the light shield 100 to be processed.In addition,
In an optional example, the thickness of the protective film 101 between 280nm-810nm, be preferably between 350nm-600nm it
Between.
Specifically, in another example, the light shield 100 to be processed further includes substrate 102, mask pattern 103 and ring
Shape frame 104, wherein the mask pattern 103 and the annular peripheral frame 104 are set to 102 surface of substrate, and the ring
Shape frame 104 is located at 103 periphery of mask pattern, and the protective film 101 is set to the annular peripheral frame 104 far from described
The side of substrate 102 and a cavity is formed with the annular peripheral frame 104 and the substrate 102.In this example, the substrate
102 include transparent substrate, can be quartz glass substrate or glass substrate of receiving, the edge of the protective film 101 can be viscous
It is attached to one end of the annular peripheral frame 104, the opposite other end of the annular peripheral frame 104 can be adhered to the substrate
On 102, so that the protective film 101 and the annular peripheral frame 104 and the substrate 102 form a cavity, it is located at protection
The mask pattern 103 in cavity.
Then, shown in S2 as shown in figure 1, step 2) is carried out, the mode based on electrostatic induction absorption is adsorbed described to be cleaned
Defect, to realize the cleaning of the light shield to be processed.
Specifically, the mode based on electrostatic induction absorption removes the defect to be cleaned 200, that is, by quiet in the step
Electro Sorb principle gets up the absorption of defect to be cleaned 200 on the light shield 100 to be processed, thus by it from light shield to be processed
It is removed on 100 surface to be treated 100a, reaches the clean purpose of light shield to be processed, be based on aforesaid way, Electrostatic Absorption
Effectively removing for mask defect not only may be implemented in mode, and reduction is injured caused by light shield to be processed, in addition, Electrostatic Absorption is also
Large area may be implemented and remove defect comprehensively, reach comprehensive clean purpose, improve defect removal efficiency.
As shown in Fig. 1 and Fig. 3-5, in one example, in step 2), the mode based on electrostatic induction absorption adsorb it is described to
Cleaning defect specifically includes step:
As shown in Figure 1, carrying out step 2-1), defect absorbent module 301 is provided, the defect absorbent module 301 is arranged
Above the surface to be treated 100a, and there is spacing between the defect absorbent module 301 and the processing surface 100a；
The Electrostatic Absorption of defect 200 to be cleaned is removed specifically, being realized in this example by defect absorbent module 301.
As an example, step 2-1) in, the defect absorbent module 301 include electrostatic chuck, step 2-2) in further include
The step of providing power supply device 302, the electrostatic chuck is electrically connected with power supply device 302, wherein in the example, the electrostatic
The top of the light shield to be processed 100 is arranged in sucker 301, be preferably provided at the light shield to be processed 100 needs carry out it is scarce
The surface for falling into the surface to be treated 100a of removal, it is corresponding up and down with the region for needing to remove defect, to be conducive to electrostatic suction
The progress and its control of attached process, the defect 200 to be cleaned are located at the upper surface of the surface to be treated of light shield, and the electrostatic
There is spacing, i.e., the described electrostatic chuck 301 and the defect 200 to be cleaned between sucker 301 and the surface to be treated 100a
Between there is spacing, the power supply device 302 that the sanitizer cartridge centers can make the electrostatic by way of energization
Adsorption charge 401 is formed on sucker 301, with the absorption for defect 200 to be cleaned.
It as an example, the material of the electrostatic chuck 301 includes metal, such as can be aluminium, copper, may be implemented described
Adsorption charge 401 is generated under the action of power supply device 302.
As in Figure 3-5, step 2-2 is then carried out), the defect absorbent module 301 is run, so that the defect is adsorbed
Component 301 adsorbs the defect to be cleaned 200 based on the mode that electrostatic induction is adsorbed.
Specifically, in one example, when the defect absorbent module 300 includes electrostatic chuck, the electrostatic chuck and institute
When stating the electrical connection of power supply device 302, the mode for running the defect absorbent module 301 includes: to open the power supply device 302,
So that generating adsorption charge 401, electrostatic induction of the electrostatic chuck based on the adsorption charge 401 on the electrostatic chuck
Adsorb the defect to be cleaned 200.
Specifically, producing absorption electricity on the electrostatic chuck after the power supply device 302 is powered to the electrostatic chuck
Lotus 401, that is, produce electrostatic, at this point, be based on electrostatic absorption principle, defect 200 to be cleaned close to the adsorption charge 401 one
Side produces charge inducing 402 opposite with 401 electrical property of adsorption charge, thus based on adsorption charge 401 and charge inducing 402
Between electrostatic attraction, the defect 200 to be cleaned is adsorbed removal, realizes the cleaning of light shield to be processed, such as Fig. 3,4 institutes
Show.
As an example, the defect to be cleaned 200 is not charged, control the electrostatic chuck 301 generate absorption positive charge and
Adsorb any one in negative electrical charge.
Specifically, a kind of mode for controlling the electrostatic chuck and generating the type of adsorption charge 401 is provided in the example,
Wherein, it includes: that the defect to be cleaned itself is not charged that the defect to be cleaned 200 is not charged, for it is uncharged it is described to
Clean defect 200, can control the electrostatic chuck and generate any electrical adsorption charge, as long as may be implemented it is described to
Clean the absorption of defect 200；The defect to be cleaned 200 is not charged further include: the defect defect to be cleaned is per se with just
Charge or negative electrical charge, still, the charge of the defect institute to be cleaned band can be to be had been carried out using static eraser
Static elimination, the defect to be cleaned of electrification can be to be removed by the ion wind in the application step, at this point, described to be cleaned
Defect is not charged, and the electrostatic chuck is based on Electrostatic Absorption mode and adsorbs to it.In addition, in one example, the electrostatic
It when sucker is adsorbed, first charges to the electrostatic chuck, positive negative electricity can be passed through to the electrostatic chuck by artificially controlling
Lotus, so that the electrostatic chuck generates corresponding charge, defect to be cleaned can attract each other with opposite charge.
As an example, running in the mode of the defect absorbent module 301 further includes the step for closing the power supply device 302
Suddenly, with the defect absorbent module 301 operation during alternately carry out the power supply device 302 unlatching and the electricity
The closing of source device 302.
Specifically, in this example, providing the Electrostatic Absorption removal that defect absorbent module 301 realizes defect 200 to be cleaned
Another way, when the defect absorbent module 301 be electrostatic chuck, when electrostatic chuck is electrically connected with power supply device 302, whole
During a Electrostatic Absorption removal, the open and close of the power supply device 302 are alternately carried out, so that the electrostatic
Intermittent generation adsorption charge 401 on sucker, that is to say, that during the removal of entire Electrostatic Absorption, to described to be cleaned
The electrostatic interaction of defect 200 is alternately, to lack so as to be cleaned described in the action breaks down based on intermittent impact force
Fall into 200 100 surface of light shield to be processed suction-operated, realize the removal of defect to be cleaned.
As an example, the time that the power supply device 302 is opened between 1s-5s, what the power supply device 302 was closed
Time is between 1s-5s；During the power supply device 302 is opened, output voltage is between 10v-100v, output electricity
Stream is between 0.01mA-0.1mA.
Specifically, in one example, running the process that the defect absorbent module 300 carries out defect Electrostatic Absorption to be cleaned
In, it is such as opened in power supply device 302, during the electrostatic chuck generates adsorption charge 401, output voltage is between 10v-
It between 100v, is preferably between 20v-80v, exports electric current between 0.01mA-0.1mA, be preferably between 0.05mA-
Between 0.08mA, in addition, the process of the opening and closing for alternately power supply device, what the power supply device 302 was opened
Time, between 1s-5s, in one example, and institute was arranged in the time that the power supply device 302 is closed between 1s-5s
The spacing between electrostatic chuck and the surface to be treated is stated between 1mm-10mm, is based on above-mentioned condition, it can be further
It is beneficial to prevent the electrostatic injury that the light shield to be processed is subject to during Electrostatic Absorption removes defect.In addition, at one
The alternately opening and closing of power supply device during Electrostatic Absorption, in one example, by the power supply device open and
Power supply device, which is closed, once can carry out 3-20 institute during a defect Electrostatic Absorption as a repetition period
The repetition period is stated, is selected according to actual demand.In addition, the time that the power supply device is closed is small in an optional example
In the time that the power supply device is opened, to be conducive to improve the working efficiency of cleaning device, Defect Removal Efficiency is improved.
As an example, spacing between the defect absorbent module 301 and the surface to be treated between 1mm-10mm it
Between；
Specifically, in the example, between controlling between the defect absorbent module 301 and the surface to be treated 100a
Away from, namely the spacing between the defect absorbent module 301 and the defect to be cleaned is controlled, when the defect absorbent module
301 be electrostatic chuck 301 when, spacing of the spacing between the electrostatic chuck 301 and the surface to be treated 100a, separately
Outside, when the defect to be cleaned is located at 101 surface of protective film, which can be the close institute of the electrostatic chuck
It states the sucker suction surface of protective film 101 and is formed with the distance between 101 surface of the protective film of defect to be cleaned,
On the one hand the setting of above-mentioned spacing can be conducive to carry out mechanical protection to light shield to be processed and the protective film, prevent institute
It states defect absorbent module and mechanical damage is caused to the protective film, in addition, being conducive to the progress of Electrostatic Absorption, improve electrostatic and inhale
Attached efficiency, in another aspect, can also be conducive to alleviate the electrostatic injury that the light shield to be processed is subject to.Wherein, in one example,
Shown in the d of the spacing as shown in figure 1, between 1mm-10mm, it is preferably between 3mm-8mm.
As an example, the light shield to be processed 100 includes protective film 101, the defect 200 to be cleaned is formed in described
On protective film 101, wherein the shape of the electrostatic chuck 301 and the shape of the protective film 101 are generally in identical, and institute
The size of electrostatic chuck 301 is stated beyond the 5%-10% of 101 size of protective film on corresponding direction
As an example, the material of the electrostatic chuck 301 includes metal, such as it can be aluminium, copper.
Specifically, in an optional example, it is described when the defect absorbent module 301 is selected as the electrostatic chuck
The shape of electrostatic chuck and the shape of the protective film 101 are generally in identical, that is, the shape of the protective film 101 if it is
Square, then the shape of the electrostatic chuck 301 is also provided with into square, to be conducive to the progress of Electrostatic Absorption process, mentions
High Electrostatic Absorption efficiency, in addition, preferably exceeding the ruler of the protective film 101 on corresponding direction for the size of electrostatic chuck
Very little 5%-10%, for example, if the shape of the protective film 101 is rectangle, the shape of the electrostatic chuck is also
Rectangle, and the lower in shape of the two corresponds to each other, that is to say, that the long side of the electrostatic chuck and the protective film 101
Long side correspondence is corresponding up and down, short side is also corresponding up and down on position, wherein the long side both ends of the electrostatic chuck exceed
101 long side a distance s of protective film, as shown in Figure 1, in one example, distance s is between 101 size of protective film
5%-10%, so that the protective film 101 uniform comprehensive stress is protected while realizing Electrostatic Absorption, in an example
In, the shape of the electrostatic chuck is square, and the side length of the electrostatic chuck is between 10cm-20cm, the example selection
For 15.24cm.
As an example, further including carrying out electrostatic pre-removal to the light shield 100 to be processed between step 1) and step 2)
Step.
Specifically, in this example, also to the light shield to be processed before the step of carrying out Electrostatic Absorption removal defect
Carry out electrostatic pre-removal the step of, such as can using ion fan progress ion wind blowing by the way of to the light shield to be processed into
Row electrostatic removal, so as to prevent electrostatic present on the light shield to be processed from causing to the defect Electrostatic Absorption of subsequent progress
Influence.
As an example, being further comprised the steps of: described to be processed after the defect to be cleaned is adsorbed to carrying out after step 2)
Light shield 100 carries out static elimination processing.
As an example, the mode of the static elimination processing includes: using ion wind apparatus to the light shield 100 to be processed
Carry out ion wind blowing processing.
Specifically, further including the light shield 100 to be processed after the defect absorption to be cleaned described to progress in one example
The step of carrying out static elimination processing can carry out static elimination, such as static eraser using static eraser 500
500 can be ion wind apparatus, such as ion fan, and the process of the static elimination processing can be carried out using ion fan,
After progress Electrostatic Absorption removes the defect to be cleaned 200 on the light shield to be processed 100, for eliminating the light shield to be processed
The electrostatic of upper remnants, prevents electrostatic from damaging to light shield, wherein in an optional example, the ion fan is arranged and continues
The time of blowing between 5s-120s, is preferably between 20s-100s.In addition, for the static eraser 500
The step of setting, can be fixed on mask stage, directly carry out electrostatic removal after Electrostatic Absorption removes defect, may be used also
The periphery of the light shield to be processed 100 to be arranged in by extra means, the base from the light shield 100 to be processed such as may be implemented
The bottom reception ion wind of plate, in addition, the static eraser can also be rotary setting, i.e. static eraser setting exists
On one bracket, the static eraser can be rotated around the axis on the bracket, to realize the light shield to be processed
Comprehensive electrostatic removal.In one example, the suction of the defect to be cleaned of reticle surface can be alternately carried out to light shield to be processed
The step of attached and static elimination, so as to which light shield is effectively protected.
In addition, in the comparative example, controlling hair by manpower as shown in fig. 6, the utility model also provides a comparative example
Mode that mask defect is provoked or the removal that defect on light shield is carried out using the mode that high pressure gas removes mask defect,
Wherein, in the scheme of comparative example, high pressure gas improper use is easy to cause fold or breakage to protective film (Pellicle),
Manpower control hair, which chooses defect (defect), to be removed, and is easy to cause scratch to protective film, and zonal sweep-out method is simultaneously
It is non-as comprehensive cleaning is quick, it is difficult to the defect being effectively removed on light shield.
In conclusion the utility model provides a kind of cleaning device of mask defect, described device is used for light to be processed
Defect to be cleaned on cover is cleaned, and the defect to be cleaned is formed in the surface to be treated of the light shield to be processed,
It is characterized in that, the cleaning device includes: defect absorbent module, is had between the defect absorbent module and the surface to be treated
There is spacing, and the defect absorbent module is based on electrostatic induction and adsorbs the defect to be cleaned, to realize the light shield to be processed
Cleaning.The cleaning device and clean method of mask defect provided by the utility model, so that the defect in semiconductor light shield is moved
In process, the removal of mask defect is carried out using nondestructive electrostatic absorption principle and equipment, so that it is clear to reach light shield
The removal of mask defect not only may be implemented using the embodiment of the utility model in clean purpose, can also prevent in removal process
Only the protective film of light shield is by fold or breakage, while being also possible to prevent protective film and being scratched, and can also further realize
The comprehensive cleaning of mask defect, device is easy, and cleaning process is simple and direct, and cleaning speed is fast.So the utility model effectively overcomes
Various shortcoming in the prior art and have high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (8)
1. a kind of cleaning device of mask defect, described to clear for cleaning to the defect to be cleaned on light shield to be processed
Clean defect is formed in the surface to be treated of the light shield to be processed, which is characterized in that the cleaning device includes:
Defect absorbent module carries out the defect to be cleaned in the surface to be treated using the defect absorbent module clear
When clean, the defect absorbent module is arranged to have spacing between the surface to be treated, and the defect absorbent module
The defect to be cleaned is adsorbed based on electrostatic induction, to realize the cleaning of the light shield to be processed.
2. the cleaning device of mask defect according to claim 1, which is characterized in that the defect absorbent module includes quiet
Electric sucker, the cleaning device further include power supply device, wherein and the electrostatic chuck is set to above the surface to be treated,
The power supply device is electrically connected with the electrostatic chuck, so that generating adsorption charge on the electrostatic chuck, the electrostatic is inhaled
Disk adsorbs the defect to be cleaned based on the electrostatic induction of the adsorption charge.
3. the cleaning device of mask defect according to claim 2, which is characterized in that the light shield to be processed includes protection
Film, the defect to be cleaned are formed on the protective film, and the protective film is formed with the table of the defect to be cleaned
Face constitutes the surface to be treated, wherein the shape of the electrostatic chuck and the shape of the protective film are generally in identical.
4. the cleaning device of mask defect according to claim 3, which is characterized in that the size of the electrostatic chuck exceeds
The 5%-10% of the protective film size on corresponding direction；The material of the electrostatic chuck includes metal.
5. the cleaning device of mask defect according to claim 3, which is characterized in that the light shield to be processed further includes base
Plate, mask pattern and annular peripheral frame, wherein the mask pattern and the annular peripheral frame are set to the substrate surface, and
The annular peripheral frame is located at the mask pattern periphery, and the protective film is set to the annular peripheral frame far from the substrate
Side and a cavity is formed with the annular peripheral frame and the substrate.
6. the cleaning device of mask defect according to claim 2, which is characterized in that the defect to be cleaned is not charged,
The electrostatic chuck is controlled to generate absorption positive charge and adsorb any one in negative electrical charge.
7. the cleaning device of mask defect according to claim 1, which is characterized in that the defect absorbent module with it is described
Spacing between surface to be treated is between 1mm-10mm.
8. the cleaning device of mask defect according to any one of claims 1-7, which is characterized in that the sanitizer cartridge
Setting further includes static eraser, to eliminate the electrostatic on the light shield to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821506854.7U CN209020879U (en) | 2018-09-14 | 2018-09-14 | The cleaning device of mask defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821506854.7U CN209020879U (en) | 2018-09-14 | 2018-09-14 | The cleaning device of mask defect |
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| Publication Number | Publication Date |
|---|---|
| CN209020879U true CN209020879U (en) | 2019-06-25 |
Family
ID=66877241
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821506854.7U Active CN209020879U (en) | 2018-09-14 | 2018-09-14 | The cleaning device of mask defect |
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| CN (1) | CN209020879U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110899246A (en) * | 2018-09-14 | 2020-03-24 | 长鑫存储技术有限公司 | Device and method for cleaning photomask defects |
| CN112838035A (en) * | 2019-11-25 | 2021-05-25 | 夏泰鑫半导体(青岛)有限公司 | Light shield box and light shield storage cabinet |
-
2018
- 2018-09-14 CN CN201821506854.7U patent/CN209020879U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110899246A (en) * | 2018-09-14 | 2020-03-24 | 长鑫存储技术有限公司 | Device and method for cleaning photomask defects |
| CN112838035A (en) * | 2019-11-25 | 2021-05-25 | 夏泰鑫半导体(青岛)有限公司 | Light shield box and light shield storage cabinet |
| CN112838035B (en) * | 2019-11-25 | 2022-12-30 | 夏泰鑫半导体(青岛)有限公司 | Light shield box and light shield storage cabinet |
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