CN208999328U - The measuring device of material secondary characteristic electron parameter in high and low temperature environment - Google Patents
The measuring device of material secondary characteristic electron parameter in high and low temperature environment Download PDFInfo
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- CN208999328U CN208999328U CN201821672485.9U CN201821672485U CN208999328U CN 208999328 U CN208999328 U CN 208999328U CN 201821672485 U CN201821672485 U CN 201821672485U CN 208999328 U CN208999328 U CN 208999328U
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Abstract
The utility model discloses a kind of measuring devices of material secondary characteristic electron parameter in high and low temperature environment, secondary electron detector is arranged in vacuum chamber in the measuring device, it set gradually including ecto-entad, be all larger than spherical shell collector, spherical shell grid and spherical shell earthing pole equal to 3/4 sphere, and insulation between each other；Sample stage and its humidity control system and angle distribution measurement system are additionally provided in secondary electron detector, the electron beam that electron gun is issued is incident to sample stage through secondary electron detector.The present apparatus can measure the secondary electron yield of metal material and dielectric material under high and low temperature environment, secondary electron spatial characteristics and secondary electron spectral distribution, the secondary electron characterisitic parameter under incidence angles degree can also be measured, by the quick heating to dielectric material can the effective charge accumulated of neutralization medium surface, saved time of measuring；And by introducing verification scheme, it ensure that accuracy, the reliability of measurement result.
Description
Technical field
The utility model belongs to the measuring device technical field of material characteristic parameter, and in particular to a kind of high and low temperature environment
The measuring device of middle material secondary characteristic electron parameter.
Background technique
Material secondary electron multiplication effect is in research fields such as present material, physics increasingly by related scientific research personnel's
Concern, especially the electron cloud effect caused by accelerator research field, the Secondary-emission multipbcation of material, lead to ringotron beam
Family status matter is limited, or even causes the irregular operation of machine.And with the proposition and construction of domestic extensive synchrotron radiation light source
(such as beforehand research of Beijing high energy light source and construction, the advanced light source beforehand research in Hefei, southern light source concept propose), large-scale accelerator
(CEPC-SPPC) conceptual design, construction, conceptual design, the construction etc. of particle application platform μ component mention vacuum box material
More stringent requirement, such as secondary electron yield < 1.1 are gone out, the development to vacuum box is all very big challenge.Simultaneously
In superconducting accelerator, Superconductor Vacuum box inner wall is influenced by temperature change, and configuration of surface is different from room temperature situation, and superconduction adds
Fast device is affected by Secondary-emission multipbcation, and Secondary-emission multipbcation phenomenon will lead to the raising of the deposition thermal power on vacuum box, is led
It causes the vacuum performance inside beam current tube to deteriorate, occurs so as to cause the sparking of high voltage radio-frequency apparatus, cause when serious entire
Quenching for accelerator causes equipment damage.
Based on above reason, studies secondary mechanism, temperature change under high and low temperature environment and cause material surface
The form cooling surface gas absorption situation under influence and low temperature environment to secondary that changes sends out secondary electron
Secondary electron space performance parameter is clearly grasped in the influence penetrated, and then proposes that technical measures inhibit multipactor, such as
Inhibit the multiplier effect of secondary electron by way of biasing in superconduction frequency cavity, superconducting accelerator vacuum box inner wall can
The thin-film material (such as: amorphous carbon-film, graphene film) etc. for plating smaller secondary electron yield, in the following accelerator design and
It is significant in construction.
The multiplier effect of secondary electron is an emphasis direction of Material Physics research field.It refers to charged particle bombardment
When body surface, projectile energy will have electronics (or ion) when being greater than the spilling threshold value of material atom and emit, this
Phenomenon is referred to as secondary electron emissions；When being emitted secondary electron number greater than incident electron number, that is, the multiplication of secondary electron occurs
Effect, secondary electron yield at this time are greater than 1.
Secondary electron characterisitic parameter generally comprise secondary electron yield, the distribution of secondary electron angle, secondary electron power spectrum,
Relationship, secondary electron yield and the deposit dose relationship etc. of secondary electron yield and incident beam direction.State at present
Inside and outside test device and test method in relation to secondary electron mainly has following feature: (1) measurement concentrates on normal temperature environment
Under；(2) all measurements are only only limitted to secondary electron yield measurement, to the secondary electron energy in secondary electron characterisitic parameter
Spectrometry research is insufficient；(3) research deficiency is distributed to secondary electron angle, complete measurement can not be carried out, also can not after simple measurement
It verifies etc.；(4) relationship, secondary electron yield and the exposure dose of secondary electron yield and incident line are closed
The measuring studies such as system are insufficient.
Therefore, the prior art has much room for improvement and improves.
Utility model content
The purpose of this utility model is to provide a kind of measurement dresses of material secondary characteristic electron parameter in high and low temperature environment
It sets, can be used for accurately measuring secondary electron yield, the distribution of secondary electron angle of sample to be tested transmitting under high and low temperature environment
Characteristic, secondary electron spectral distribution etc..
This application provides a kind of measuring devices of material secondary characteristic electron parameter in high and low temperature environment, include:
Vacuum chamber；
Electron gun；
Setting sets gradually, is all larger than equal to 3/4 sphere in the indoor secondary electron detector of vacuum, including ecto-entad
Spherical shell collector, spherical shell grid and spherical shell earthing pole, spherical shell collector, spherical shell grid and spherical shell earthing pole are exhausted between each other
Edge；
Sample stage in the middle part of secondary electron detector and its humidity control system are set, including for heating adding for sample
Thermal and cooling device for cooling down sample；
Angle distribution measurement system in secondary electron detector is set, is detected including that can be distributed around the angle of sample rotates
Device；
The electron beam that electron gun is issued is incident to sample stage through secondary electron detector；
Detection system, including flowing through spherical shell collection for measuring for measuring the first detection device for flowing through sample current
The second detection device of electrode current, and for measuring the third detection device for flowing through angle distribution detector current；
Spherical shell grid connects adjustable DC power supply.
The measuring device, wherein the electric current for flowing through sample is measured through first resistor by the first oscillograph；Flow through spherical shell
Electric current on collector is measured through second resistance by the second oscillograph；The electric current of angle distribution detector is flowed through through 3rd resistor by the
Three oscillographs are measured.
The measuring device, wherein be provided with the first hole on the spherical shell collector, be provided on the spherical shell grid
Second hole is provided with third hole on the spherical shell earthing pole；The electron beam that the electron gun issues sequentially passes through the first hole, second
Hole and third hole are incident to inside secondary electron detector.
The measuring device, wherein the spherical shell collector, spherical shell grid and spherical shell earthing pole are total to the centre of sphere, from described
For the centre of sphere to outer projection, the area that the spherical shell collector, spherical shell grid and spherical shell earthing pole are overlapped is more than or equal to 3/4 sphere.
The measuring device, wherein the sample stage and its humidity control system further include for driving sample stage edge
Its axis is rotated to the first rotating device of angle to be measured.
The measuring device, wherein the sample stage includes the sample carrier, insulator and bottom set gradually from top to bottom
Seat；The sample carrier and pedestal are insulated by insulator, and the inside of pedestal, the inside of the pedestal is arranged in the heating device
It is additionally provided with temperature element；The cooling device includes refrigerating head and the refrigeration machine that connect with refrigerating head；The refrigerating head and bottom
The bottom surface of seat, with thermally conductive.
The measuring device, wherein the pedestal is spherical bottom structure, and the refrigerating head is spherical concave structure,
The refrigerating head and pedestal mating spherical surfaces.
The measuring device, wherein the heating device and temperature element are connected with controller, and the controller is used for
The heating of heating device is controlled, and/or for controlling measurement of the temperature element to sample stage temperature.
The measuring device, wherein the angle distribution measurement system further include: the rotation for established angle distribution detector
Shaft, and for driving angle distribution detector along the second rotating device of axis rotation where the rotary shaft；The rotation
The axis of axis is overlapped with axis where sample, and by the centre of sphere of spherical shell collector；Second rotating device driving angle distribution
Detector is rotated with first direction or second direction, so that angle distribution detector and sample form angle.
The measuring device, wherein the angle distribution detector includes the support portion of installation on the rotary shaft, Yi Jian
Measurement portion on support portion；The measurement portion is the arc-shaped flaky structure with pre-set radius and predetermined width；The survey
Midpoint and the centre of sphere on the both ends end portion width direction in amount portion are formed by plane, by the midpoint of sample stage, and perpendicular to sample
Axis is formed by plane through the centre of sphere where sample platform.
The utility model has the beneficial effects that
The utility model provides a kind of measuring device of material secondary characteristic electron parameter in high and low temperature environment, comprising:
Vacuum chamber；Electron gun；Setting is in the indoor secondary electron detector of vacuum, including ecto-entad sets gradually, is all larger than and is equal to
Spherical shell collector, spherical shell grid and the spherical shell earthing pole of 3/4 sphere, and insulation between each other；It is also set in secondary electron detector
It is equipped with sample stage and its humidity control system and angle distribution measurement system, the electron beam that electron gun is issued is visited through secondary electron
It surveys device and is incident to sample stage.The present apparatus can measure the secondary system of metal material and dielectric material under high and low temperature environment
Number, secondary electron spatial characteristics and secondary electron spectral distribution, can also measure the secondary electricity under incidence angles degree
Sub-feature parameter, by the quick heating to dielectric material can the effective charge accumulated of neutralization medium surface, saved survey
Measure the time；And by introducing verification scheme, it ensure that accuracy, the reliability of measurement result.
Detailed description of the invention
Fig. 1 is the knot of the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model
Structure schematic diagram；
Fig. 2 is angle in the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model
It is distributed the positional diagram of detector and sample stage；
Fig. 3 is sample in the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model
The positional diagram of sample platform and heating device and cooling device；
Fig. 4 is in the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model two
The positional diagram of secondary electron detector and angle distribution detector；
Fig. 5 is angle in the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model
It is distributed the structural schematic diagram one of detector；
Fig. 6 is angle in the measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the utility model
It is distributed the structural schematic diagram two of detector；
The schematic diagram of secondary electron distribution when Fig. 7 is electron beam vertical incidence；
The schematic diagram of secondary electron distribution when Fig. 8 is electron beam non-normal incidence；
To the measuring principle schematic diagram of material secondary Electron Angular distribution character when Fig. 9 is electron beam vertical incidence；
Material secondary Electron Angular distribution character curve synoptic diagram when Figure 10 is electron beam vertical incidence；
To the measuring principle schematic diagram of material secondary Electron Angular distribution character when Figure 11 is electron beam non-normal incidence；
Material secondary Electron Angular distribution character curve synoptic diagram when Figure 12 is electron beam non-normal incidence.
Specific embodiment
For convenient for the understanding to technical solutions of the utility model, below by specific embodiment combination attached drawing to the application
It is described in further detail.
Shown in referring to figures 1-3, material secondary characteristic electron parameter in a kind of high and low temperature environment is present embodiments provided
Measuring device, comprising: vacuum chamber 1, electron gun 2, secondary electron detector, sample stage and its humidity control system, angle distribution are surveyed
Amount system and detection system.
Vacuum environment needed for vacuum chamber 1 provides measurement sample to be tested secondary electron characterisitic parameter, particular by vacuum
Equipment provides vacuum environment for it, and the vacuum degree of the vacuum environment is different according to the difference of the material properties of sample to be tested.This
In embodiment, at least one is additionally provided on vacuum chamber can open form (not shown), and can open form can allow ambient light
Vacuum chamber is injected in source, facilitates observation original sample positions, can also open when gas pressure in vacuum is approximately higher than atmospheric gas pressure can open
Form carries out sample replacement.
Electron gun 2 can launch the continuous or pulsed electron beam of 1-5kev, and beam spot size is less than 5mm, particular by
Electron gun control module controls the energy of 2 launching electronics beam of electron gun, direction, flows the parameters such as strong, to provide secondary electron characteristic
Incident line needed for parameter measurement.The measurement demand of different condition can be met for greater flexibility by electron gun control module.
In the present embodiment, electron gun 2 is arranged outside vacuum chamber 1, and the exit end of electron gun 2, which passes through, is arranged in leading on vacuum chamber 1
Hole 11 is injected in vacuum chamber.Certainly, in other embodiments, under the premise of not influencing other equipment, device and measurement process,
Electron gun 2 may also be arranged in vacuum chamber 1.
Secondary electron detector is fixedly mounted in vacuum chamber 1, the spherical shell collector set gradually including ecto-entad
3, spherical shell grid 4 and spherical shell earthing pole 5, wherein spherical shell collector 3, spherical shell grid 4 and spherical shell earthing pole 5 are to be more than or equal to
The spherical shell shape structure of 3/4 sphere, the altogether centre of sphere, three insulate between each other, and three respectively from the centre of sphere to outer projection after be overlapped
Area be more than or equal to 3/4 sphere.Spherical shell grid 4 and spherical shell earthing pole 5 be usually arranged as it is latticed, in order to avoid influence be located at it is outermost
The spherical shell collector 3 of layer collects secondary electron.The electron beam of supplied for electronic rifle sending passes through first is provided on spherical shell collector 3
Hole is provided with the second hole that the electron beam of supplied for electronic rifle sending passes through on spherical shell grid 4, is provided with electronics on spherical shell earthing pole 5
The third hole that the electron beam that rifle issues passes through, electron beam are incident to secondary electricity after sequentially passing through the first hole, the second hole and third hole
Inside sub- detector, specifically it is incident on sample stage.
In one embodiment, the first hole on spherical shell collector 3, the second hole on spherical shell grid 4, Yi Jiwei
The size in three holes in the third hole on spherical shell earthing pole 5 can be identical, be also possible to different, and three holes
Center can be coaxial line, be also possible to not coaxial line, need to only meet and not stop electronics during in electron beam
Beam.In the present embodiment, three holes are coaxial lines.
It is shown in Figure 4, the structure of secondary electron detector is shown in figure, by taking outermost spherical shell collector as an example,
About secondary electron detector structure it is to be understood that a complete spherical shell by by any on spherical shell axis C axis
Two semicircles intersected with spherical shell cut out two openings in the episphere and lower semisphere of spherical shell respectively, and two openings are respectively formed the
Line of the midpoint of one circular arc A and the second circular arc B, the midpoint of the first circular arc A and the second circular arc B on spherical shell surface is formed by
Circular arc is major arc, and the angle of the major arc is more than or equal to 270 °, so that spherical shell collector shows the spherical shell more than or equal to 3/4 sphere
Shape structure.Spherical shell collector, spherical shell grid and the spherical shell earthing pole of three total centre ofs sphere are intercepted simultaneously, to form the present embodiment institute
The structure of the secondary electron detector of offer.As shown in connection with fig. 1, when the first hole, the second hole and third hole are arranged at episphere
When, electron beam vertical incidence to the first circular arc A with where the axis of axis C plane and shell intersect and be formed by the round center of circle
Place；When the first hole, the second hole and third hole are arranged at left hemisphere, electron beam vertical incidence to the second circular arc B is with axis C's
Plane where axis and shell intersection are formed by the round center of circle.
In the present embodiment, spherical shell collector 3 can realize full side using 3/4 spherical shell shape structure, spherical shell collector 3 is more than or equal to
The collection secondary electron of position, thus the secondary electron current signal measured is more significant, has higher sensitivity, ensure that survey
Measure the accuracy and reliability of result.
Sample stage and its humidity control system are arranged in the middle part of secondary electron detector, load on sample stage 8 to be measured
Sample 6, is provided with the heating device 85 for heating to sample to be tested in sample stage 8, the bottom of sample stage 8 be provided with for pair
The cooling cooling device of sample to be tested 6.As shown in connection with fig. 4, sample stage 8 is located at the sphere diameter being overlapped with axis where axis C
Midpoint lower section, and 8 place axis of sample stage along axis axis direction be arranged so that sample to be tested 6 be located at and axis C institute
At the midpoint (the i.e. described centre of sphere) for the spherical shell diameter that axis is overlapped.Outgoing of the upper surface of sample to be tested 6 towards electron gun 2
End.
For driving that sample stage 8 rotates along 8 place axis of sample stage is additionally provided on the axis direction of sample stage 8
The rotary motion of horizontal direction is converted into sample in such a way that bevel gear cooperates by one rotating device 81, the first rotating device 81
The rotary motion of sample platform 8 vertically, the direction as indicated by the curved arrow that the first rotating device 81 is marked in Fig. 2,
First rotating device 81 is rotated in the counterclockwise direction in vertical direction, drives sample stage 8 in the horizontal direction by bevel gear
It is rotated in a clockwise direction.Certainly, in other embodiments, direction of rotation is also possible to the first rotating device 81 in vertical direction
On be rotated in a clockwise direction, by bevel gear drive sample stage 8 be rotated in the counterclockwise direction in the horizontal direction.
Present embodiment ensure that sample stage 8 rotates smoothly, can be remained to be measured by the way of Bevel Gear Transmission
Sample 6 is located at the center of secondary electron detector, in order to which the secondary electron characterisitic parameter to sample to be tested 6 detects.?
It can also be the kind of drive of other mechanical structures, such as: rack-and-pinion in other embodiments.
In conjunction with shown in Fig. 1 and Fig. 4, when the first rotating device 81 in episphere is arranged in the first hole, the second hole and third hole
Drive sample stage 8 along the axis where sample stage 8, it is successively certain with interval from 0 ° with the first circular arc A to the direction of the second circular arc B
Angle is rotated to 90 °；When the first hole, the second hole and third hole are arranged in left hemisphere, the first rotating device 81 drives sample stage 8
Along 8 place axis of sample stage, with the second circular arc B to the direction of the first circular arc A from 0 ° successively with certain angular interval rotate to
90°.The present embodiment with electron beam vertical incidence to the first circular arc A with where the axis of axis C plane and shell intersect institute's shape
At disc the center of circle for be illustrated, i.e. the first hole, the second hole and third hole are arranged on episphere.
Shown in Figure 3, sample stage 8 includes sample carrier 82, insulator 83 and the pedestal 84 set gradually from top to bottom.Sample
The preferred copper sample support of product support 82,83 preferably ceramic insulation strip of insulator, pedestal 84 use spherical bottom structure, set in pedestal 84
It is equipped with heating device 85 and temperature element 86, heating device 85 is preferably Resistant heating mode, and temperature element 86 is preferably heat
Galvanic couple, and heating device 85 and temperature element 86 are also connected with controller 11, and controller 11 is right for controlling heating device 85
Sample to be tested heating is also used to control temperature element 86 and carries out temperature measurement to sample to be tested 6, so that heating device 85 is heated to
Temperature environment needed for testing environment.The cooling dress being made of refrigerating head 9 and refrigeration machine 10 is additionally provided in the bottom of pedestal 84
It sets, to be cooled down to the sample to be tested 6 after heating, or directly sample to be tested 6 is cooled down, reach test environment
Required temperature environment, and then realize with the cooperation of heating device 85 and the secondary electron characteristic of material is joined under different temperatures environment
Number measures, while the temperature environment needed for it can be also provided for different materials.In the present embodiment, refrigerating head 9 preferably half
Spherical shell shape structure, and the concave surface of spherical shell is upward, bottom surface spherical surface-mating spherical surfaces of concave surface and pedestal 84 upward, in the first rotation
When device 81 drives sample stage 8 to rotate, it is ensured that maximum contact area, to realize the effect of quick conductive.Refrigeration machine 10
Preferably 3.5K refrigeration machine, between refrigeration machine 10 and refrigerating head 9 by cold arm (passing cold bar) connect, can achieve quickly pass it is cold
Effect.
In other embodiments, refrigeration machine 10 can also be used from pressurization liquid helium Dewar substitution, its advantage is that a less investment；
The disadvantage is that operation and maintenance trouble, and maintenance cost is high.
Angle distribution measurement system is arranged in secondary electron detector, comprising: axis is by the centre of sphere and coincides with to be measured
The rotary shaft 72 of 6 place axis of sample, the angle distribution detector 7 being mounted in rotary shaft 72, and for driving angle distribution to visit
The second rotating device 71 that device 7 is rotated around axis with first direction or second direction is surveyed, the second rotating device 71 drives angle distribution
Detector 7 along 72 place axis of rotary shaft around sample to be tested 6 rotate so that angle distribution detector 7 end and sample to be tested 6 it
Between generate angle.Second rotating device 71 is same by the way of bevel gear cooperation, and the rotary motion of horizontal direction is converted to
Angle is distributed the rotary motion of detector 7 vertically., such as the curved arrow meaning that the second rotating device 71 is marked in Fig. 2
The direction shown, the second rotating device 71 are rotated in the counterclockwise direction in vertical direction, drive angle distribution detection by bevel gear
Device 7 is rotated in a clockwise direction in the horizontal direction.A kind of direction of rotation is only marked out in figure, the second rotating device 71 may be used also
It is rotated in a clockwise direction in vertical direction, drives angle to be distributed detector 7 in the horizontal direction along clockwise by bevel gear
Direction rotates.
Shown in referring to figs. 5 and 6, the structure that Fig. 5 and Fig. 6 respectively illustrate two different perspectives inferior horns distribution detectors is shown
It is intended to.Angle distribution detector 7 includes the support portion 73 being mounted in rotary shaft 72 and the measurement portion 74 being mounted on support portion 73,
Wherein, measurement portion 74 is the arc-shaped flaky structure with pre-set radius R and predetermined width L.The arc length of measurement portion 74 is more than or equal to
It corresponds to the 1/4 of circumference, and in other words, the corresponding central angle of the arc length of measurement portion 74 is more than or equal to 90 °.Measurement portion 74 have with
The first end 741 that support portion 73 connects, and the second end 742 far from support portion 73, first end 741 and second end 742 are at it
The line of midpoint in width direction, the arcuately arcwall face of measurement portion 74 forms circular arc, and the circle where the circular arc is by being in 3/4
The centre of sphere of the secondary electron detector of sphere, and the centre of sphere concurrent in the center of circle of circle and secondary electron detector where the circular arc.
In other words, the midpoint on the both ends end portion width direction of measurement portion 74 and the centre of sphere are formed by plane, perpendicular to 8 institute of sample stage
It is formed by plane through the centre of sphere in axis, and by the midpoint (midpoint i.e. in the both ends width direction of measurement portion 74 of sample stage 8
It is formed by plane with the centre of sphere, by 8 equal part of sample stage).
It is shown in Figure 7, the direction of rotation of angle distribution detector 7 is shown in Fig. 7, in conjunction with Fig. 4 as can be seen that angle is distributed
Detector 7 is rotated in secondary electron detector with the direction of the second circular arc B to the first circular arc A, or with the first circular arc A to second
The direction of circular arc B rotates, i.e. the first direction that device 7 rotates is visited in the second rotating device 71 driving angle distribution and second direction is to survey
The direction that 74 circular arc of amount portion extends, and opposite direction each other.In the present embodiment, first direction and second direction are respectively vertical flat
It is clockwise and counterclockwise in face.
Detection system, including flowing through spherical shell collection for measuring for measuring the first detection device for flowing through sample current
The second detection device of electrode current, and for measuring the third detection device for flowing through angle distribution detector current.First detection dress
It sets including first resistor R1With the first oscillograph V1, second detection device includes second resistance R2With the second oscillograph V2, third inspection
Surveying device includes 3rd resistor R3With third oscillograph V3。
Sample stage 8 passes through first resistor R1With the first oscillograph V1Connection, the available electronics flowed through on sample to be tested 6
Amount, be denoted as I1=V1/R1；Spherical shell collector 3 passes through second resistance R2With the second oscillograph V2Connection, available stream
Amount through the electronics on spherical shell collector 3, is denoted as I2=V2/R2；Angle is distributed detector 7 and passes through 3rd resistor R3With
Three oscillograph V3Connection, the available amount for flowing through the electronics on angle distribution detector 7, is denoted as I3=V3/R3；Spherical shell
Grid 4 is connected with adjustable DC power supply 41 by switch Ka, and the voltage of adjustable DC power supply 41 is -150v~0v.
The measuring device of material secondary characteristic electron parameter in high and low temperature environment provided by the present embodiment, can be used for pair
The measurement of the secondary electron yield of sample to be tested, measuring principle are as follows: firstly, opening heating device or cooling device, make
Temperature needed for environment temperature reaches test sample to be tested 6, then pass through the first rotating device 81 for the sample to be tested on sample stage 8
6 rotation to test needed for angle, the angle be between 6 surface of electron beam and sample to be tested angle (such as: the angle is
90 °, the i.e. surface of electron beam vertical incidence to sample to be tested), angle distribution detector 7 is placed in by rotation by the second rotating device 71
Angle between the second end 742 and sample stage surface of the lower zone of sample stage 8 after turning, i.e. angle distribution detector 7 is less than
Equal to 0 °, and voltage is not added in spherical shell grid 4；Electron gun 2 is opened, by the incident energy of electron gun control module control electron beam
Amount, the energy E for emitting it；The electric current on sample to be tested 6 is flowed through through first resistor R1Afterwards by the first oscillograph V1It measures, is
I1=V1/R1, the electric current on spherical shell collector 3 is flowed through through second resistance R2Afterwards by the second oscillograph V2It measures, is I2=V2/R2,
In, the amount of primary electron is I1+I2, the amount of secondary electron is I2, the ratio of secondary electron and primary electron is secondary electron hair
Penetrate coefficient, i.e. secondary electron yield δ are as follows: δ=I2/(I1+I2), obtain the secondary electron yield δ under the ENERGY E.
It keeps the angle between electron beam and sample to be tested 6 constant, successively changes the projectile energy E of electron beam, can obtain
Relationship between secondary electron yield δ and electron beam projectile energy E, draws the relation curve of δ-E, and completion enters in electron beam
The measurement of the secondary electron yield of material in the case that firing angle degree is constant.
Keep electron beam projectile energy E constant, successively change between electron beam and sample to be tested 6 angle (such as: electronics
Angle between 6 surface of beam and sample to be tested become 80 °, 70 °, 60 °, 50 °, until 0 °), can be obtained incident beam with it is to be measured
Secondary electron yield under 6 surface difference angle of sample, to complete under electron beam and 6 surface difference angle of sample to be tested
Secondary electron yield measurement.
In the present embodiment, it is different within the scope of 0 ° -90 ° of sample to be tested surface angle that electron beam can be measured using the present apparatus
Secondary electron yield under angle.According to the graph of relation of δ-E, it may be determined that secondary electron yield maximum value δ max situation
Under, corresponding beam energy maximum value Emain.In the ENERGY EmainUnder, two caused by beam bombardment sample to be tested surface
Secondary number of electrons is most, has higher measurement sensitivity, and in subsequent test process, electron beam projectile energy uses the energy
Measure EmainValue, the result of test are relatively more accurate, reliable.
The measuring device of material secondary characteristic electron parameter, may further be used in high and low temperature environment provided by the present embodiment
Measure the secondary electron angle distribution character of sample to be tested, measuring principle are as follows: intersect at secondary electron from the normal of sample stage and visit
The spherical surface for surveying device, which is formed by, a little to be started, until plane where sample stage surface intersects at secondary electron detector spherical surface and is formed by
Plane terminates, and the spherical surface of secondary electron detector is divided into n parts of annulus, and n is the positive integer more than or equal to 1, and angle is distributed and is visited
It surveys device to rotate from the side interval predetermined angle of sample stage to the other side of sample stage, every rotation is primary, detects and fills by third
It sets measurement and flows through the current value that angle is distributed on detector, obtain the secondary electron current value on each annulus by conversion, thus
Obtain secondary electron angle distribution character.
In the present embodiment, electron beam, which is incident on secondary electron caused by sample to be tested surface, to be scattered within the scope of 180 °
, as shown in fig. 7, when electron beam vertical incidence to sample to be tested surface, i.e., angle between electron beam and sample to be tested surface
It is 90 °, the secondary electron that the primary electron by impinging perpendicularly on sample to be tested surface is scattered is about electron beam incidence
Straight line where path is axisymmetric, so only to the angle distribution character of secondary electron caused by sample to be tested in vertical incidence
The secondary electron within the scope of 0 ° -90 °, which need to be measured, can be obtained the secondary electron angle distribution character within the scope of 180 °.Such as Fig. 8 institute
Show, when electron beam non-normal incidence, generated secondary electron nonisotropic scattering within the scope of 180 °, therefore, it is necessary to right
Secondary electron within the scope of 180 ° measures, and the secondary electron angle distribution that can just obtain in electron beam non-normal incidence is special
Property.Meanwhile in measurement process, by angle be distributed detector with the predetermined angle at 1 ° of interval and from angle distribution detector with it is to be measured
Angle between sample is to start successively to rotate at 1 °, the number n of secondary electron detector equal part is set as 90, to sample to be tested
Secondary electron angle distribution character measure, specific measurement process is as follows:
It is shown in Figure 9, it, will be in two more than or equal to 3/4 sphere when electron beam impinges perpendicularly on sample to be tested surface
The episphere of secondary electron detector starts along zenith angle C, until plane and secondary electron detector ball where sample to be tested surface
Face intersection, which is formed by plane, to be terminated, which is the upper half ball portion of secondary electron detector, will on latitude direction
It is divided into 90 parts, then the episphere forms 90 annulus of equal part, and electron beam is from vertical incidence from zenith angle C to sample to be tested
Surface, because secondary electron caused by the primary electron of vertical incidence is about straight line axial symmetry where electron beam incident path
Be distributed on each annulus, and because each annulus width it is sufficiently narrow, can approximately think the same annulus
Received secondary electron quantity is equal on unit area, it is assumed that the electric current of the secondary electron of unit area on each annulus
Value are as follows: a1, a2..., an；When angle, distribution detector rotates to a certain angle, θ, angle is distributed the measurement portion on detector from upper half
At the centre of sphere of ball outside projection cover on each annulus on secondary electron detector occupy certain area (measurement portion away from
It is close enough that digression is distributed detector), it is denoted as S1, S2..., Sn, then it is θ in angle distribution detector and sample to be tested angle
Angle is distributed current value caused by secondary electron received by detector are as follows: Iθ=S1a1+S2a2+...+Snan.It is understood that
, as shown in figure 9, the orthographic projection of the measurement portion of angle distribution detector is covered on secondary electron detector in angle theta
Four annulus, respectively S1、S2、S3And S4, angle theta at this time is 4 °.Angle is distributed detector from angle between sample to be tested
1 ° starts to rotate at interval of 1 ° of unit, until angle is to terminate more than or equal to 90 ° between sample to be tested, angle distribution detection
Every rotation 1 ° of record, one current value of device, is obtained 90 current values, is denoted as: (I1°,I2°,...,I90°).Wherein, each current value
It is expressed by the equation of following relationship:
Above-mentioned equation shares 90, solves to above-mentioned 90 equatioies, obtains (a1,a2,...,a90) in each electricity
Flow valuve obtains each circle with the area S ' of each annulus multiplied by the current value of the secondary electron on the unit area of corresponding annulus
The current value I ' of secondary electron on ring, is denoted as: I '=S ' an, each current value I ' is exactly secondary on the annulus
Electron Angular Distribution Value.Draw the relationship between the current value I ' of the secondary electron on each annulus and the angle, θ of detector rotation
Curve obtains the curve graph of the secondary electron angle distribution character in electron beam vertical incidence.As shown in Figure 10, it is shown in Figure 10
When electron beam vertical incidence, angle is distributed the electric current of secondary electron corresponding under different angles between detector and sample to be tested
Relation curve between value.
It is shown in Figure 11, when electron beam it is non-perpendicular be incident to sample to be tested surface, i.e. electron beam and sample to be tested table
When angle between face is γ, being incident on the secondary electron that the primary electrons of sample surfaces is launched is 180 ° of models in space
Enclose interior scattering, the secondary electron of the scattering is asymmetric about the incident path of electron beam, so angle distribution detector need to from
Sample to be tested angle is to start to rotate at 1 °, until 180 ° at terminate (referring to fig. 4 angle distribution detector need to the first circular arc A extremely
180 ° are rotated in the range of second circular arc B), the measurement to the secondary electron in each range is completed, the angle of secondary electron is obtained
Distribution character.Specifically, the measurement process of the secondary electron angle distribution character in electron beam non-normal incidence are as follows:
Since angle rotate being distributed detector from being 1 ° with sample to be tested surface angle, every rotation 1 ° of record, one electric current
Value, is obtained 180 current values, is denoted as: (I1°,I2°,...,I180°)；
The current value that angle is distributed when angle is 1 ° between detector and sample to be tested surface is I1°；
The current value that angle is distributed when angle is 2 ° between detector and sample to be tested surface is I2°-I1°；
The current value that angle is distributed when angle is 180 ° between detector and sample to be tested surface is I180°-I179°；
In the present embodiment, the current value of each annulus unit area under γ angle is (Iγ-Iγ-1)/R γ L, is denoted as T.
Wherein, R is the measurement portion radius that angle is distributed on detector, and L is the width for the measurement portion that angle is distributed on detector, and it is bent to be T- γ
Line, the material secondary Electron Angular distribution character as under incidence angles degree.Material secondary when to electron beam non-normal incidence
The measurement of Electron Angular distribution character meets the measurement demand of different samples to be tested.
As shown in Figure 12, it is secondary electron angle in the case of different angles that electron beam and sample to be tested are shown in Figure 12
The curve graph of the secondary electron angle distribution character in 0 ° and 30 ° has been shown in particular in the characteristic curve of distribution.
With continued reference to shown in Fig. 5 and Fig. 6, the structure that angle shown in figure is distributed the measurement portion 74 of detector 7 is arc-like sheet
Shape structure, by the measuring principle of above-mentioned secondary electron angle distribution character, it can be concluded that, angle distribution detector 7 plays shield portions at this
The effect of secondary electron, when angle distribution detector when rotated, and previous angle between sample to be tested surface and latter
When difference between a angle is sufficiently small, the current value of the secondary electron angle distribution measured is more accurate, the secondary electricity obtained from
Sub- angle distribution character is more accurate, more beneficial to scientific research.
In the present embodiment, also it can be distributed the amount for the secondary electron that detector detects by angle and spherical shell collector 3 detects
To the amount of secondary electron verification is compared to measurement result.Its verification mode are as follows: be distributed detector and sample to be tested at angle
When angle between surface is 0 °, angle is distributed the current value detected on the current value and spherical shell collector detected on detector
The sum of be primary electron current value, and when angle is distributed 1 ° of the every variation of angle between detector and sample to be tested, angle distribution
The sum of current value detected on the current value and spherical shell collector detected on detector is that angle is distributed every 1 ° of the rotation of detector
When primary electron be incident on the current value of the secondary electron launched on sample to be tested, judge current value and the angle of primary electron
Whether the current value of secondary electron at 1 ° of the every rotation of distribution detector is equal, then can verify to its measurement result, if phase
Deng or it is roughly equal, then illustrate that measurement result is correct；If differing greatly between value, illustrates measurement result inaccuracy, need weight
Newly measure.
The measuring device of secondary electron characterisitic parameter provided in this embodiment verifies measurement by total secondary electron electric current
Whether there is the verification mode of mistake, can guarantee the validity and accuracy of measurement result.
The measuring device of material secondary characteristic electron parameter, may further be used in high and low temperature environment provided by the present embodiment
Measure the energy spectrum characteristics of secondary electron, measuring principle are as follows: keep electron beam and the constant situation of 6 surface angle of sample to be tested
Under, change the voltage of spherical shell grid 4 by adjustable DC power supply 41, the electronics greater than a certain energy can be prevented to pass through spherical shell grid
Pole 4 is collected by spherical shell collector 3, takes the I value under different grid voltage U, and note Δ I is corresponding electric current under neighboring gates voltage U
Difference does U- Δ I curve to get the spectrum curve of secondary electron is arrived.Secondary electron detector is used more than or equal to 3/4 sphere
Spherical shell shape structure keeps being constant dimensions between grid and sample to be tested, and then guarantees the accuracy of spectral measurement.
It should be noted that mixing in the secondary electron that sample to be tested 6 emits after primary electron is incident on sample to be tested 6
Have other kinds electronics, such as elastic scattering electrons, inelastic scattering electronics etc., therefore, spherical shell collector 3 be collected into it is secondary
While electronics, it can also be collected into other kinds of electronics.When recording the I value under different grid voltage U, while recording difference
Secondary electron yield under grid voltage U does U- δ curve, which differentiates to different grid voltage U to get arriving
With the spectrum curve of secondary electron yield δ relationship under different grid voltage U, pass through the analysis to the spectrum curve
With tell elastic scattering electrons, inelastic scattering electronics and scattering primary electron (backscattered electron) and really it is secondary
Electronics.
When sample to be tested is insulated sample, incident beam can overstock a large amount of electricity after bombarding insulated sample surface
Lotus, and the charge overstock can not export, so that the potential duration on sample to be tested surface increases, sample surfaces current potential is increased
The accuracy of measurement result is influenced whether afterwards, therefore, it is necessary to neutralize to sample surfaces.The present apparatus is neutralized using heating
Mode heats sample using the heating device 85 of 8 bottom of sample stage setting, can effectively neutralize sample surfaces and be accumulated
Charge, meanwhile, sample stage 8 can pass through that cooling device is cooling, can temperature of the fast quick-recovery to needed for testing.Specifically, working as
When sample to be tested is insulated sample, electron beam is opened heating device 85, is heated the sample to after sample surfaces of every bombardment
100 DEG C, after maintaining several minutes (such as 1~3min), close heating device 85；Start cooling device, makes insulated sample surface
Temperature needed for temperature drops to test as early as possible, continues to test.
The measuring device of material secondary characteristic electron parameter, may be implemented in high and low temperature environment provided by the present embodiment
The complete measurement of secondary electron characterisitic parameter, feature with the following functions: (1) can measure under high and low temperature environment metal material and
The secondary electron characterisitic parameter of dielectric material；It (2) can be with the spatial characteristics of complete measurement material secondary electronics；It (3) can be with
Measure the secondary electron power spectrum of material under high and low temperature environment；(4) secondary in the case of different incidence angles can be measured
Coefficient, secondary electron angle distribution character, secondary electron spectral distribution etc.；(5) pass through the quick high-temp to sample (dielectric material)
Heating can effective neutralization medium surface charge aggregation, while measurement temperature range can be quickly cooled to, it is effective to save
Time of measuring.
Use above specific case is illustrated the utility model, is merely used to help understand the utility model, and
Not to limit the utility model.Think of for those skilled in the art of the present invention, according to the utility model
Think, several simple deductions, deformation or replacement can also be made.
Claims (10)
1. the measuring device of material secondary characteristic electron parameter in a kind of high and low temperature environment characterized by comprising
Vacuum chamber；
Electron gun；
It is arranged in the indoor secondary electron detector of vacuum, is set gradually including ecto-entad, is all larger than the ball equal to 3/4 sphere
Shell collector, spherical shell grid and spherical shell earthing pole, spherical shell collector, spherical shell grid and spherical shell earthing pole insulate between each other；
Sample stage in the middle part of secondary electron detector and its humidity control system are set, including the heating dress for heating sample
It sets and the cooling device for cooling down sample；
Angle distribution measurement system in secondary electron detector is set, including that can be distributed detector around the angle of sample rotates；
The electron beam that electron gun is issued is incident to sample stage through secondary electron detector；
Detection system, including flowing through spherical shell collector electricity for measuring for measuring the first detection device for flowing through sample current
The second detection device of stream, and for measuring the third detection device for flowing through angle distribution detector current；
Spherical shell grid connects adjustable DC power supply.
2. measuring device according to claim 1, which is characterized in that the electric current for flowing through sample is shown through first resistor by first
Wave device is measured；The electric current flowed through on spherical shell collector is measured through second resistance by the second oscillograph；Flow through angle distribution detector
Electric current is measured through 3rd resistor by third oscillograph.
3. measuring device according to claim 1, which is characterized in that be provided with the first hole, institute on the spherical shell collector
It states and is provided with the second hole on spherical shell grid, be provided with third hole on the spherical shell earthing pole；The electron beam that the electron gun issues
The first hole, the second hole and third hole is sequentially passed through to be incident to inside secondary electron detector.
4. measuring device according to claim 3, which is characterized in that the spherical shell collector, spherical shell grid and spherical shell connect
Earth polar is total to the centre of sphere, and from the centre of sphere to outer projection, the area that the spherical shell collector, spherical shell grid and spherical shell earthing pole are overlapped is big
In equal to 3/4 sphere.
5. measuring device according to claim 1, which is characterized in that the sample stage and its humidity control system further include
For driving sample stage to rotate along its axis to the first rotating device of angle to be measured.
6. measuring device according to claim 5, which is characterized in that the sample stage includes setting gradually from top to bottom
Sample carrier, insulator and pedestal；The sample carrier and pedestal are insulated by insulator, and the heating device is arranged in pedestal
The inside in portion, the pedestal is additionally provided with temperature element；The cooling device includes refrigerating head and the refrigeration that connect with refrigerating head
Machine；The bottom surface of the refrigerating head and pedestal, with thermally conductive.
7. measuring device according to claim 6, which is characterized in that the pedestal is spherical bottom structure, the cooling
Head is spherical concave structure, the refrigerating head and pedestal mating spherical surfaces.
8. measuring device according to claim 5, which is characterized in that the heating device and temperature element are connected with control
Device, the controller are used to control the heating of heating device, and/or for controlling measurement of the temperature element to sample stage temperature.
9. measuring device according to claim 1, which is characterized in that the angle distribution measurement system further include: for pacifying
The rotary shaft of angle distribution detector is filled, and for driving angle distribution detector along second of axis rotation where the rotary shaft
Rotating device；The axis of the rotary shaft is overlapped with axis where sample, and by the centre of sphere of spherical shell collector；Second rotation
Rotary device drives angle distribution detector to rotate with first direction or second direction, so that angle distribution detector is formed with sample
Angle.
10. measuring device according to claim 5, which is characterized in that the angle distribution detector includes being mounted on rotation
Support portion on axis, and the measurement portion being mounted on support portion；The measurement portion is with pre-set radius and predetermined width
Arc-shaped flaky structure；Midpoint and the centre of sphere on the both ends end portion width direction of the measurement portion are formed by plane, by sample
The midpoint of platform, and plane is formed by through the centre of sphere perpendicular to axis where sample stage.
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| CN113533404B (en) * | 2021-07-13 | 2023-04-28 | 中国工程物理研究院流体物理研究所 | Method for testing secondary electron yield of insulating medium material and application |
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