CN204807482U - Measurement device for secondary electron performance parameters - Google Patents
Measurement device for secondary electron performance parameters Download PDFInfo
- Publication number
- CN204807482U CN204807482U CN201520504454.2U CN201520504454U CN204807482U CN 204807482 U CN204807482 U CN 204807482U CN 201520504454 U CN201520504454 U CN 201520504454U CN 204807482 U CN204807482 U CN 204807482U
- Authority
- CN
- China
- Prior art keywords
- secondary electron
- collector
- sample
- vacuum chamber
- collected overhead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 81
- 238000012360 testing method Methods 0.000 claims description 23
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 10
- 238000011160 research Methods 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 8
- 238000012795 verification Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000276425 Xiphophorus maculatus Species 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The utility model provides a measurement device for secondary electron performance parameters, measuring device's secondary electron detector sets up in real empty room includes be used for collecting secondary electron's lateral part collector and top collector, lateral wall collector and top collector enclose synthetic tube -shape, and lateral wall collector and top collector pass through the dead ring keeps apart, and the electron gun runs through the top collector and stretches into inside the secondary electron detector. The application provides a relation of spatial distribution characteristic through secondary electron, secondary electron yield and incident angle, secondary electron's spectral distribution characteristic come to carry out the analysis to the secondary electron characteristic, for the research of material in the aspect of secondary electron emission characteristic provides new direction, lay a good foundation for the secondary electron emission characteristic who know the material better. The measuring device and method for that this application embodiment provided not only has more excellent operability, and is machine -processed through its check -up in addition, can guarantee measuring result's accuracy betterly.
Description
Technical field
The application belongs to the measurement mechanism of material characteristic parameter, is specifically related to a kind of measurement mechanism of secondary electron characterisitic parameter.
Background technology
During charged particle bombardment body surface, will have electronics (or ion) when its projectile energy is greater than the spilling threshold value of material atom and emit, this phenomenon is called secondary electron emissions.If the incident particle for bombarding is electronics, then this phenomenon is called secondary.Incident electron is called initiating electron or primary electron, is called electronic secondary or secondary electron from by bombardment object emission electronics out.When outgoing secondary electron number is greater than incident electron number, secondary electron yield is greater than 1, namely launches the multiplier effect of secondary electron.The multiplier effect of secondary electron is an emphasis direction of Material Physics research field.Along with development and the application of ringotron technology, in accelerator research field, the phenomenon that the multiplier effect due to secondary electron causes is day by day remarkable.First, the multiplier effect of secondary electron accelerates the electron accumulation in vacuum pipe in annular, finally forms highdensity electron cloud and assembles, and will have a strong impact on quality of beam and even cause machine can not stable operation.Secondly, in modern accelerators, high power frequency cavity has become the critical component of accelerator design, and inside cavity can limit the steady state (SS) of electromagnetic field of high frequency due to the multiplier effect of secondary electron, and then affects the normal operation of accelerator frequency cavity.In addition, in vacuum pipe, secondary electron the most at last energy deposition in pipeline material, stronger multipactor can cause the deposition thermal power on vacuum box to improve, in vacuum pipe particularly in superconduction environment, the quench of whole accelerator can be caused to occur, cause device damage.Finally, secondary electron strongly multiplication can cause the vacuum performance of beam current tube inside to worsen, thus causes the sparking of high voltage radio-frequency apparatus to occur.Based on above reason, the emission mechanism of research secondary electron, the clear space performance parameter grasping secondary electron, and then the multiplier effect of technical measures suppression secondary electron is proposed, as suppressed the multiplier effect of secondary electron in frequency cavity by biased mode, the membraneous material etc. of the less secondary electron yield of accelerator vacuum box inwall plating is in the design of accelerator with in building, significant.
The domestic proving installation at secondary electron and method of testing mainly contain following feature at present: for the emission ratio size that secondary electron is total in (1) measuring set, i.e. SEY (SecondaryElectronYield), cannot carry out complete measurement and analysis to the spatial characteristics of the secondary electron of different materials sample; (2) energy distribution of secondary electron is not carefully studied, still do not carry out the Measurement accuracy of spectral distribution; (3) further investigated is not carried out to the relation between secondary electron yield and incoming beam flow path direction; (4) verification between total amount and spatial characteristics measurement result cannot be realized simultaneously.
Summary of the invention
This application provides a kind of measurement mechanism of secondary electron characterisitic parameter, can be used for incident beam when being normally incident in testing sample surface, the spatial characteristics of the secondary electron that Measurement accuracy testing sample is launched.
This application provides a kind of measurement mechanism of secondary electron characterisitic parameter, comprising:
Vacuum system, comprises vacuum chamber and the vacuum equipment for providing and maintain vacuum environment for vacuum chamber;
Electron beam emission coefficient, it comprises and to be arranged in vacuum chamber, for the electron gun of divergent bundle;
Secondary electron detector, it is fixed in vacuum chamber, comprise the sidewall collector for collecting secondary electron and collected overhead pole, sidewall collector and collected overhead pole enclose tubular, sidewall collector and collected overhead pole are isolated by dead ring, and electron gun runs through collected overhead pole and stretches into secondary electron detector inside;
Current measurement system, comprises the first current measurement meter and the second current measurement meter that are connected with collected overhead pole and sidewall collector respectively;
Sample is changed and regulating system, and comprise the thruster be arranged on outside vacuum chamber and the sample stage be attached thereto, sample stage stretches into wherein bottom secondary electron detector, and impeller driven sample stage moves up and down.
In one embodiment, described sidepiece collector and collected overhead enclose the right cylinder of an one end open extremely jointly.
In one embodiment, described collected overhead pole comprises multiple collecting ring, is often isolated by dead ring between adjacent two collecting rings.
In one embodiment, sample stage one side is for clamping testing sample, and another side fixes Faraday cylinder; Described sample is changed and regulating system also comprises the wheelwork being positioned at vacuum chamber and connecting sample stage, and described wheelwork turn to predetermined angle for driving sample stage; Current measurement system also comprises the 3rd galvanometer, for measuring the electric current of sample surfaces or Faraday cylinder.
In one embodiment, wheelwork, by being connected with sample stage without oily Worm and worm-wheel gearing, moves for the flip vertical horizontal revolving motion of worm screw being transferred to sample stage.
In one embodiment, also grid and earthing pole is fixedly mounted respectively, mutually insulated between grid, earthing pole, collector inside the sidewall collector of described secondary electron detector and collected overhead pole; Grid connects grid bias power supply.
In one embodiment, micro-reometer is counted in the first current measurement meter, the second current measurement meter and the 3rd current measurement, and described grid bias power supply is adjustable DC power supply.
In one embodiment, described device also comprises current potential neutralized system, for when testing sample is insulated sample, monitors the current potential on insulated sample surface and neutralizes.
In one embodiment, described vacuum chamber is at least provided with one and can opens form, place for testing sample and observe.
In one embodiment, the two sides, front and back of described vacuum chamber is respectively arranged with one and can opens form.
The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, the secondary electron detector of measurement mechanism is arranged in vacuum chamber, comprise the sidepiece collector for collecting secondary electron and collected overhead pole, sidewall collector and collected overhead pole enclose tubular, sidewall collector and collected overhead pole are isolated by dead ring, and electron gun runs through collected overhead pole and stretches into secondary electron detector inside.Therefore, at incident beam when being normally incident in testing sample surface, can the Measurement accuracy testing sample spatial characteristics of secondary electron of launching.
Accompanying drawing explanation
Fig. 1 is the structural representation of the measurement mechanism of secondary electron characterisitic parameter in a kind of embodiment of the application;
Fig. 2 is the structural representation of collected overhead pole in the measurement mechanism of a kind of embodiment secondary electron of the application characterisitic parameter;
Fig. 3 is the spatial characteristics measuring principle schematic diagram of secondary electron in a kind of embodiment of the application.
Embodiment
By reference to the accompanying drawings the application is described in further detail below by embodiment.
Please refer to Fig. 1, present embodiments provide a kind of measurement mechanism of secondary electron characterisitic parameter, comprising: vacuum system, electron emissive system, secondary electron detector, current measurement system and sample are changed and regulating system.
Vacuum system comprises vacuum chamber 2 and for providing the vacuum equipment 1 of vacuum environment for vacuum chamber 2.For the detection of secondary electron, must carry out in vacuum environment, therefore, vacuum system can provide testing environment for the measurement of secondary electron characterisitic parameter.Concrete, vacuum equipment 1 can comprise the molecular pump unit and sputter ion pump that are made up of without oily dry pump, molecular pump machinery as pumping equipment, the vacuum measurement device formed is advised by Pirani gauge and hot cathode, the vacuum components analysis instrument be made up of the vacuum residual gas analytical equipment of residual gas analyzer, and the nitrogen charger be made up of vacuum needle-valve.Such structure has the advantage easily realized, and cost is lower, in the measuring process of secondary electron characterisitic parameter, has better operability.
In other embodiments, the concrete structure of vacuum equipment 1 can design according to the actual requirements, merely provides a kind of preferred scheme in the present embodiment.
Electron emissive system comprises and to be arranged in vacuum chamber 2, for the electron gun 7 of divergent bundle.Electron gun 7 can launch the continuous of 1-2000ev or pulsed electron beam, and bundle spot size is less than 5mm.Electron emissive system can also comprise electron gun control module 8, to control the energy of electron gun 7 ejected electron bundle.Electron beam emission coefficient may be used for providing the incident line required for the measurement of secondary electron characterisitic parameter, and, by electron gun control module 8, different measurement demands can be met better.
Secondary electron detector is fixed in vacuum chamber, comprise the sidepiece collector 5 for collecting secondary electron and collected overhead pole 21, sidewall collector and collected overhead pole enclose tubular, sidewall collector and collected overhead pole are isolated by dead ring, and electron gun runs through collected overhead pole and stretches into secondary electron detector inside.In the present embodiment, the right cylinder extremely jointly enclosing an one end open for sidepiece collector and collected overhead is described, in other embodiments, in guarantee by normally collecting in the prerequisite of secondary electron, sidepiece collector and collected overhead pole also can enclose other shapes, such as truncated cone-shaped or rectangular parallelepiped.Secondary electron detector is arranged in vacuum chamber 2, its inner chamber is right cylinder, sidepiece collector 5 forms cylindrical side, collected overhead pole 21 forms one of them bottom surface cylindrical, another bottom surface opening cylindrical is arranged, and is isolated between sidepiece collector 5 and collected overhead pole 21 by dead ring 6; Electron gun 7 is from the opening part of collected overhead pole 21 to divergent bundle in secondary electron detector.In the present embodiment, as shown in Figure 2, collected overhead pole 21 comprises multiple collecting ring 210, and often isolated by dead ring 6 between adjacent two collecting rings 210, Fig. 2 shows the situation of three collecting rings.In other embodiments, collected overhead pole 21 also can be a complete platy structure.It should be noted that, after primary electron incides testing sample, mix in the secondary electron of electromagnetic radiation to be tested and have other kinds electronics, such as elastic scattering electrons, backscattered electron etc., therefore, the electronics of other types, while collecting secondary electron, also can be collected in sidepiece collector 5 and collected overhead pole 21.
The secondary electron detector that the present embodiment provides can collect secondary electron better, and the electric current that the secondary electron collected produces is comparatively large, therefore, has higher measurement sensistivity, measurement result can be made more accurate.
In other embodiments, collected overhead pole 21 can also be complete platy structure.
Current measurement system comprises the first current measurement meter 9 and the second current measurement meter 10 be connected with collected overhead pole 21 and sidepiece collector 5 respectively, is respectively used to measure the electronic current that each collecting ring 210 of collected overhead pole 21 and sidepiece collector 5 detect.In the present embodiment, the first current measurement meter 9 and the second current measurement meter 10 are micro-reometer (A1 and A2).In other embodiments, the first current measurement meter 9 and the second current measurement meter 10 can adopt other modes surveying electric current to realize, and the measuring mechanism such as adopting oscillograph and quota resistance to combine realizes.In a particular embodiment, in collected overhead pole 21, multiple collecting ring 210 is connected in parallel, and the first current measurement meter 9 can record the total current after the parallel connection of multiple collecting ring 210; Or multiple collecting ring 210 is connected in series in collected overhead pole 21, the first current measurement meter 9 records the electronic current that each collecting ring 210 detects respectively.
Sample is changed and regulating system comprises the thruster 15 be arranged on outside vacuum chamber 2 and the sample stage 17 be attached thereto, and sample stage 17 stretches into wherein bottom secondary electron detector, and thruster 15 drives sample stage 17 to move up and down.Thruster 15 drives sample stage 17 to move up and down to refer in secondary electron detector, near or side away from collected overhead pole move up.Thruster 15 can adopt small-sized oil-free vacuum straight line propeller.
The sample that the present embodiment provides is changed and in regulating system, its structure has the advantage easily realized, and cost is lower, in the measuring process of secondary electron characterisitic parameter, has better operability.
The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, can be used for incident beam when being normally incident in testing sample surface, the spatial characteristics of the secondary electron that Measurement accuracy testing sample is launched.As shown in Figure 3, its measuring principle is as follows:
The cylindric electron collector (secondary electron detector) of vacuum indoor location, the top cover of cylinder is circular ring type electron collector (collected overhead pole), insulate between cylinder sidewall and top cover, electron gun is from the incident electron line collimation bombardment of launching on the sample stage of cylindric electron collector bottom, and sample stage can move along axis is upper and lower.During measurement, vertical mobile example platform, the strength of current collected of cylinder electrode when measuring diverse location, as when position 1, the secondary electron electric current I of the secondary electron electric current that cylindrical wall is collected to be angle be α scope
α; When moving to position 2, what cylinder electrode sidewall was collected is angle is secondary electron electric current I within the scope of β
β, namely both current differential reflects the electric current under alpha-beta angle.When adopting sample stage to move, detector can measure the secondary electron within the scope of different angles, by asking difference, can obtain the amount of the secondary electron in a certain angle.Spatial character distribution measuring is that the difference between current adopting collected in drums extremely to go up is determined, if M point is current sample position, N point is sample point of proximity position, and it is I that sample can measure secondary electron current value within the scope of α ° when M point
α, it is I that sample can measure secondary electron current value within the scope of β ° when N point
β, then the current value in angle [β, α] scope is I
α-I
βas long as it is enough near to get M point and N point position, then can measure the spatial characteristics of secondary electron, namely determine the secondary electron distribution of current of different angles.
Meanwhile, secondary electron is measured and is adopted cylindric detector, and the amount that collected overhead pole and the collection of sidepiece collector detect secondary electron is larger, therefore, the current value obtained is comparatively large, can avoid collecting and detect less current value, makes to occur certain error when measuring.
In addition, the electronic current that the measurement mechanism of secondary electron characterisitic parameter that the present embodiment provides can also be detected by collected overhead pole and sidepiece collector carries out contrast verification to measurement result.Its verification mode is: judgement sample platform when two diverse locations, the electronic current that collected overhead pole detects with sidepiece collector with whether consistent, if inconsistent, then illustrate that mistake appears in measurement, needs remeasure, if unanimously, then illustrate that measurement result is correct.
The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, adopts sidepiece collector and collected overhead pole to combine the mode measured in a creative way, measures whether occur mistake by the verification of total secondary electron electric current.The measurement mechanism that the present embodiment provides introduces verification scheme, can ensure validity and the accuracy of measurement result.
Further, the measurement mechanism of secondary electron characterisitic parameter that the present embodiment provides can also be used to measure the relation of secondary electron yield (secondary electron yield) and incident angle.In the measurement mechanism of secondary electron characterisitic parameter, the one side of sample stage 17 is for clamping testing sample 18, and another side is Faraday cylinder 19.Sample is changed and regulating system also comprises the wheelwork 14 be arranged in vacuum chamber, turn to predetermined angle for driving sample stage 17.Current measurement system also comprises the 3rd current measurement meter 20, for measuring the current value on the surface of testing sample on sample stage 17 or Faraday cylinder.When measuring primary electron electric current, make Faraday cylinder 19 turn to top by wheelwork 14, when measuring secondary electron characterisitic parameter, make testing sample 18 turn to top by wheelwork 14.Concrete, wheelwork 14 can adopt miniature oil-free vacuum motor, starting miniature oil-free vacuum motor, by the horizontal revolving motion of worm screw being transferred without oily Worm and worm-wheel gearing 13 to the flip vertical motion of sample stage, thus realizing the upset to sample stage 17.3rd current measurement meter 20 also can adopt micro-reometer (A3).
Because sample stage 17 can overturn, thus cause incident electron line formation surperficial relative to testing sample angle, under different angle, the secondary electron stream measured on cylinder detector is strong, thus determines the relation of secondary electron yield and incident beam stream incident angle.
Further, the measurement mechanism of secondary electron characterisitic parameter that the present embodiment provides can also be used to the spectrum curve measuring secondary electron.In the measurement mechanism of secondary electron characterisitic parameter, secondary electron detector also comprises grid 4 and earthing pole 3, the side of secondary electron detector is followed successively by sidepiece collector 5, grid 4, ground connection level 3 from outside to inside, and one of them bottom surface of secondary electron detector is followed successively by collected overhead pole 21, grid 4, earthing pole 3 from outside to inside.Mutually insulated between grid, earthing pole, collector.Current measurement system also comprise be connected with grid 4, for the power supply 11 of control gate voltage, power supply 11 is specifically as follows adjustable DC power supply.It should be noted that, grid 4 and earthing pole 3 are set to latticed usually, therefore, can not affect the collector being positioned at outside and collect electronics.
By changing grid voltage, then the electronics being greater than a certain energy can be stoped to be collected pole by grid and to collect, at a certain location point, get the I value under different grid voltage U, note Δ I is current differential corresponding under neighboring gates voltage, does U-Δ I curve, is the spectrum curve of secondary electron.After obtaining the spectrum curve of secondary electron, by further analysis, elasticity reflection electronic, non-resilient reflection electronic and scattered electron (backscattered electron) and real secondary electron namely can be told.
Preferably, the measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides also comprises current potential neutralized system 12, for when testing sample is insulated sample, monitors the current potential on insulated sample surface and neutralizes.When testing sample is conducting sample, incident electron to beat after sample surfaces the electric charge that overstocks can freely derive, therefore, the current potential of sample surfaces can not continue to raise.When testing sample is insulated sample, incident electron to beat after sample surfaces the electric charge that overstocks cannot derive, thus the current potential of sample surfaces is constantly raised, sample surfaces current potential can affect measurement after raising, therefore, be necessary to neutralize sample surfaces current potential.In the present embodiment, the current potential on current potential neutralized system 12 pairs of insulated sample surfaces neutralizes, can be specifically by control increase grid voltage, secondary electron is reflected back sample surfaces, thus in and sample surface charge.
The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides take into account various applied environment, by current potential neutralized system 12, solve the problem of the sample surfaces current potential rising often run at present, improve stability and the accuracy of the measurement of secondary electron characterisitic parameter.
Further, in the measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, vacuum chamber is at least provided with one and can opens form 16, for providing the window putting and take out testing sample into.Form 16 can be opened can also be used for facilitating user to observe inner case.Preferably, vacuum chamber being arranged two and can open form, be separately positioned on the front and back of vacuum chamber, be positioned at the form opened above for putting into and taking out testing sample, being positioned at the form opened at the back side for playing printing opacity effect.Certainly, the form opened being positioned at the back side also can be set to a printing opacity, and can not open.Can open form for two both can allow external light source inject vacuum chamber, conveniently observed original sample positions, also can open form when gas pressure in vacuum is approximately higher than atmospheric pressure and carry out sample replacing.By the design of form can be opened, the measurement mechanism of secondary electron characterisitic parameter is made to have more excellent operability.
In the measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, the mechanism being arranged on vacuum chamber 2 outside is connected with the mechanism being arranged on vacuum chamber 2 inside by through walls of vacuum.The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides can be used for measuring the spatial characteristics of secondary electron, secondary electron yield and the relation of incident angle, spectrum curve three kinds of parameters of secondary electron, when specifically using, select according to the actual requirements to measure one, two or three parameter wherein.
The measurement mechanism of the secondary electron characterisitic parameter that the present embodiment provides, can realize the perfect measurement of secondary electron characterisitic parameter, and it has functional characteristics below: (1) measuring table can measure the secondary electron characterisitic parameter of metal and insulating medium; (2) can scan the secondary electron yield of different measuring sample and incident electron energy, i.e. δ-E curve, determine incident electron energy when maximum secondary electron yield occurs; (3) by carrying out Measurement and analysis to the secondary electron on diverse location point, to determine its spatial characteristics; (4) Measurement accuracy of secondary electron spectral distribution is realized by energy-spectrum scanning, to differentiate the ratio of true secondary electron, elastic scattering electrons and scattered electron; (5) by monitoring the surface potential of insulated sample, utilize the method for neutralization medium surface charge, the secondary electron realizing insulating material is measured.
Present applicant proposes and by the spatial characteristics of secondary electron, secondary electron yield and the relation of incident angle, the spectral distribution characteristic of secondary electron, secondary electron characteristic is analyzed, for the research of material in secondary electron emission characteristic provides new direction, for the secondary electron emission characteristic being familiar with material is better laid a good foundation.For measuring three characterisitic parameters above, the measurement mechanism that the application provides, the spectral distribution characteristic of the relation of the spatial characteristics of secondary electron, secondary electron yield and incident angle, secondary electron can be accurately measured, this measurement mechanism not only has preferably operability, and by its verification scheme, the accuracy of measurement result can be ensured preferably.
Above content is the further description done the application in conjunction with concrete embodiment, can not assert that the concrete enforcement of the application is confined to these explanations.For the application person of an ordinary skill in the technical field, under the prerequisite not departing from the present application design, some simple deduction or replace can also be made.
Claims (10)
1. a measurement mechanism for secondary electron characterisitic parameter, is characterized in that, comprising:
Vacuum system, comprises vacuum chamber and the vacuum equipment for providing and maintain vacuum environment for vacuum chamber;
Electron beam emission coefficient, it comprises and to be arranged in vacuum chamber, for the electron gun of divergent bundle;
Secondary electron detector, it is fixed in vacuum chamber, comprise the sidewall collector for collecting secondary electron and collected overhead pole, sidewall collector and collected overhead pole enclose tubular, sidewall collector and collected overhead pole are isolated by dead ring, and electron gun runs through collected overhead pole and stretches into secondary electron detector inside;
Current measurement system, comprises the first current measurement meter and the second current measurement meter that are connected with collected overhead pole and sidewall collector respectively;
Sample is changed and regulating system, and comprise the thruster be arranged on outside vacuum chamber and the sample stage be attached thereto, sample stage stretches into wherein bottom secondary electron detector, and impeller driven sample stage moves up and down.
2. device as claimed in claim 1, it is characterized in that, described sidepiece collector and collected overhead enclose the right cylinder of an one end open extremely jointly.
3. device as claimed in claim 2, it is characterized in that, described collected overhead pole comprises multiple collecting ring, is often isolated by dead ring between adjacent two collecting rings.
4. device as claimed in claim 3, is characterized in that, sample stage one side is for clamping testing sample, and another side fixes Faraday cylinder; Described sample is changed and regulating system also comprises the wheelwork being positioned at vacuum chamber and connecting sample stage, and described wheelwork turn to predetermined angle for driving sample stage; Current measurement system also comprises the 3rd galvanometer, for measuring the electric current of sample surfaces or Faraday cylinder.
5. device as claimed in claim 4, is characterized in that, wheelwork, by being connected with sample stage without oily Worm and worm-wheel gearing, moves for the flip vertical horizontal revolving motion of worm screw being transferred to sample stage.
6. device as claimed in claim 5, is characterized in that, also fixedly mounts grid and earthing pole respectively, mutually insulated between grid, earthing pole, collector inside the sidewall collector of described secondary electron detector and collected overhead pole; Grid connects grid bias power supply.
7. device as claimed in claim 6, it is characterized in that, micro-reometer is counted in the first current measurement meter, the second current measurement meter and the 3rd current measurement, and described grid bias power supply is adjustable DC power supply.
8. the device as described in any one of claim 1-7, is characterized in that, described device also comprises current potential neutralized system, for when testing sample is insulated sample, monitors the current potential on insulated sample surface and neutralizes.
9. the device as described in any one of claim 1-7, is characterized in that, described vacuum chamber is at least provided with one and can opens form, places and observe for testing sample.
10. device as claimed in claim 9, it is characterized in that, the two sides, front and back of described vacuum chamber is respectively arranged with one and can opens form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520504454.2U CN204807482U (en) | 2015-07-13 | 2015-07-13 | Measurement device for secondary electron performance parameters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520504454.2U CN204807482U (en) | 2015-07-13 | 2015-07-13 | Measurement device for secondary electron performance parameters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204807482U true CN204807482U (en) | 2015-11-25 |
Family
ID=54592287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520504454.2U Withdrawn - After Issue CN204807482U (en) | 2015-07-13 | 2015-07-13 | Measurement device for secondary electron performance parameters |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204807482U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105092626A (en) * | 2015-07-13 | 2015-11-25 | 中国科学院高能物理研究所 | Measuring device and method for secondary electron characteristic parameters |
| CN106770411A (en) * | 2016-11-10 | 2017-05-31 | 中国原子能科学研究院 | A kind of secondary electron measurement apparatus |
| CN108896594A (en) * | 2018-09-18 | 2018-11-27 | 中国工程物理研究院流体物理研究所 | A kind of material secondary electron emission characteristic measurement sample pretreatment apparatus |
| CN115616017A (en) * | 2022-09-30 | 2023-01-17 | 南方科技大学 | Electronic optical test platform device |
-
2015
- 2015-07-13 CN CN201520504454.2U patent/CN204807482U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105092626A (en) * | 2015-07-13 | 2015-11-25 | 中国科学院高能物理研究所 | Measuring device and method for secondary electron characteristic parameters |
| CN105092626B (en) * | 2015-07-13 | 2017-11-21 | 中国科学院高能物理研究所 | The measurement apparatus and method of secondary electron characterisitic parameter |
| CN106770411A (en) * | 2016-11-10 | 2017-05-31 | 中国原子能科学研究院 | A kind of secondary electron measurement apparatus |
| CN106770411B (en) * | 2016-11-10 | 2019-05-24 | 中国原子能科学研究院 | A kind of secondary electron measuring device |
| CN108896594A (en) * | 2018-09-18 | 2018-11-27 | 中国工程物理研究院流体物理研究所 | A kind of material secondary electron emission characteristic measurement sample pretreatment apparatus |
| CN108896594B (en) * | 2018-09-18 | 2024-02-06 | 中国工程物理研究院流体物理研究所 | Material secondary electron emission characteristic measurement sample preprocessing device |
| CN115616017A (en) * | 2022-09-30 | 2023-01-17 | 南方科技大学 | Electronic optical test platform device |
| CN115616017B (en) * | 2022-09-30 | 2023-11-10 | 南方科技大学 | Electronic optical test platform device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105092626A (en) | Measuring device and method for secondary electron characteristic parameters | |
| CN204807482U (en) | Measurement device for secondary electron performance parameters | |
| US11069516B2 (en) | Electro static linear ion trap mass spectrometer | |
| Mead et al. | Electromagnetic pulse generation within a petawatt laser target chamber | |
| CN103760181B (en) | The method of testing of star secondary electron emission yield of dielectric material and test macro | |
| CN103776858A (en) | Panel type collection device and method for measuring secondary electron emission coefficient | |
| CN106770411B (en) | A kind of secondary electron measuring device | |
| CN111766483A (en) | Long air gap spherical electrode streamer discharge simulation system and simulation method thereof | |
| CN202066970U (en) | Accurate real-time online monitoring device for total dose of large-area uniform beam irradiation | |
| CN105022083A (en) | Ion electric propulsion beam doubly charged ion testing device and assembling method thereof | |
| CN104422478A (en) | Apparatus and method for measuring parameters of transient plasmas in high-speed impact | |
| CN107808817A (en) | For space micro-debris and the Time-of-flight mass spectrometer of micrometeroroid component detection | |
| CN105304455B (en) | A kind of vacuum arc ion source time of-flight mass spectrometer | |
| CN105259400B (en) | A kind of Z hoop fibre arrays load voltage measurement apparatus and method | |
| CN208588795U (en) | Can the controllable reactor turn-to-turn insulation overvoltage of electric discharge of remote reviewing examine equipment | |
| CN110133462B (en) | Composite insulator aging performance test system and method based on space charge effect | |
| Senes | Development of a beam position monitor for co-propagating electron and proton beams | |
| CN104237659A (en) | In-situ measurement device and method for space charges of dielectric material under electron irradiation | |
| CN205081091U (en) | Vacuum arc ion source time -of -flight mass spectrometer | |
| CN207992374U (en) | Gap discharge emits optical acquisition device and system | |
| IL292326A (en) | Gas analyzer system with ion source | |
| Connolly et al. | Residual-gas-ionization beam profile monitors in RHIC | |
| CN104137222B (en) | The method at biggest quality peak in detection mass spectral analysis | |
| Iriso et al. | Electron induced molecular desorption from electron clouds at the Relativistic Heavy Ion Collider | |
| Macek et al. | Electron cloud diagnostics in use at the Los Alamos PSR |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151125 Effective date of abandoning: 20171121 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20151125 Effective date of abandoning: 20171121 |