CN208937623U - Elastic probe device - Google Patents
Elastic probe device Download PDFInfo
- Publication number
- CN208937623U CN208937623U CN201820858429.8U CN201820858429U CN208937623U CN 208937623 U CN208937623 U CN 208937623U CN 201820858429 U CN201820858429 U CN 201820858429U CN 208937623 U CN208937623 U CN 208937623U
- Authority
- CN
- China
- Prior art keywords
- probe
- insulating substrate
- module
- contact
- probe unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000523 sample Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000008676 import Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model discloses a probe device with elasticity, constitute including insulating substrate and a set of probe, this insulating substrate has the contact of signal output and input, and this probe is adhered to the contact on insulating substrate and perpendicular to insulating substrate, and this probe is with round, triangle-shaped and other geometric shape's module up storehouse to required height, and these geometric shape's module is with different angle stacks, constitutes a set from this and has elastic spring probe device.
Description
Technical field
The utility model is about a kind of flexible probe unit, and espespecially one kind can be used to assist semiconductor crystal wafer smart
Probe can be averaged and accurately contact on test semiconductor wafer point by close measurement, act on up to quick and accurate test,
The effective probe unit for increasing test semiconductor wafer efficiency.
Background technique
Semiconductor industry rapidly develops in recent years, and process technique is advanced by leaps and bounds, at this stage transistor channels (Channel
Length) have developed to newest 7 nanometer processing procedure, and integrated circuit (IC) volume is more and more small, foot number is more and more, in order to from
Small intensive semiconductor crystal wafer weld pad (pad) or convex block (bump) draw chip signal, to maintain the accurate of semiconductor crystal wafer
Test running, it usually needs have accurately probe unit, to effectively directly contact is tested semiconductor crystal wafer weld pad (pad) or convex
Block (bump), Lai Zengjia testing efficiency.
As shown in Figure 1, a kind of its probe unit of well known test semiconductor wafer, which includes a probe
Block 10a, be furnished with route on probe card 10a, one group of probe 11a is disposed on route, the needle point of this group of probe 11a directly contacts half
Semiconductor wafer weld pad (pad) or convex block (bump) 12a draw and are tested on chip signal to probe card 10a.
Utility model content
The probe unit of well known test semiconductor wafer utilizes manual mode, by tens of to hundreds of probes,
According to semiconductor crystal wafer weld pad or bump position is tested, probe is placed in probe card, thus probe is directly contacted and partly led
Body wafer weld pad or convex block are drawn chip signal and are tested, and such probe unit using manual mode because being made, probe volume
Greatly, therefore it is unable to satisfy must asking for chip microminiaturization and high pin count, while probe is to ask elastification, uses high rigidity metal
Production, such as tungsten, nickel, such metal and dielectric is not very good, be easy to cause test error or scratch semiconductor crystal wafer weld pad or
Convex block.
The utility model provides a kind of flexible probe unit, includes an insulating substrate, one group tens of to number
Ten thousand probes, there is the contact of through hole on the insulating substrate, this contact is according to being tested semiconductor crystal wafer weld pad or convex block position
Corresponding arrangement is set, this group of probe is attached to the contact of insulating substrate and perpendicular to insulating substrate, and the probe is with round, triangle
Up for storehouse to required height, the module of these geometries is vertical with different angle for the module of shape and other geometries
Thus storehouse forms one group of flexible probe unit.
The there is provided probe unit of the utility model, probe are electroplated using various composite conducting material, ingredient have copper,
Nickel, gold, palladium, tin etc., because it contains various material, so probe with high conductivity, high rigidity and it is high how consumption, simultaneously
Probe makes probe and measured object measuring point have Maximum Contact area, contact resistance and temperature is effectively reduced perpendicular to measured object
Value, further, probe with the module of different geometries with different angle vertical stack, thus form one group it is flexible
Probe, for the probe framework of this form when being pressurized, torque is uniform, does not deviate or deforms, and needle point and the contraposition of measured object measuring point are accurate,
Whole coplanarity is good, while probe, with lithographic exposure forming mode plating production, volume microminiaturization can measure more small fine and closely woven
Measuring point.
Detailed description of the invention
Fig. 1 is the perspective view of well known test semiconductor wafer probe unit;
Fig. 2 is the perspective view of the utility model;
Fig. 3 is the probe stereogram exploded view of the utility model;
Fig. 4 is the top view of the probe part of the utility model.
Symbol description:
10a probe card
11a probe
12a semiconductor crystal wafer weld pad (pad) or convex block (bump)
10 insulating substrates
11 contacts
12 probes
13 round die blocks
14 triangular modules
15 round die blocks
16 triangular modules
17 solid circles modules
Specific embodiment
Shown in as shown in Figure 2, Figure 3 and Figure 4, the utility model provides a kind of flexible probe unit, which includes
One insulating substrate 10 has the contact 11 of multiple through holes on the insulating substrate 10, this contact 11 is according to tested semiconductor crystal wafer
Weld pad or the corresponding arrangement of bump position, sticking together on each contact 111 has a probe 12, and the probe 12 is perpendicular to insulating substrate
10, which is formed with the module stack of round, triangle and other geometries, and the bottom of the probe 12 is circular mode
Block 13, the round die block 13 are plated on contact 11 with lithographic exposure forming mode, and triangular module 14 is exposed with lithographic and shaped
Storehouse is electroplated on round die block 13 in mode, and round die block 15 is with lithographic exposure forming mode plating storehouse in triangular module 14
On, storehouse is electroplated on round die block 15 with lithographic exposure forming mode in triangular module 16, the triangular module 16 and triangle
Shape module 14 forms 60 degree of differential seat angles, so repeats storehouse to the needed height of probe 12, solid circles module 17, storehouse is being visited
The top of needle 12 forms one group of flexible probe unit by above step as the needle point contact of probe 12.
The above is only the preferred embodiments of the utility model, are not intended to limit the utility model, for this field
Technical staff for, various modifications and changes may be made to the present invention.Within the spirit and principle of the utility model,
Any modification, equivalent replacement, improvement and so on should be included within the scope of protection of this utility model.
Claims (4)
1. a kind of flexible probe unit characterized by comprising
One insulating substrate, the insulating substrate have the contact of signal import and export;
One group of probe, the probe are attached to insulating substrate, and the probe is with the module composition of various geometries, these geometries
Module with different angle Cross-Stack.
2. flexible probe unit as described in claim 1, which is characterized in that the probe is with the mould of various geometries
The link of block storehouse.
3. flexible probe unit as described in claim 1, which is characterized in that the module of the probe is handed over different angle
Pitch storehouse.
4. flexible probe unit as described in claim 1, which is characterized in that wherein the spring of the probe is with various several
The module Cross-Stack link of what shape.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106210957 | 2017-07-26 | ||
TW106210957U TWM566332U (en) | 2017-07-26 | 2017-07-26 | Spring probe with geometric stacking method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN208937623U true CN208937623U (en) | 2019-06-04 |
Family
ID=64398969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201820858429.8U Active CN208937623U (en) | 2017-07-26 | 2018-06-05 | Elastic probe device |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN208937623U (en) |
TW (1) | TWM566332U (en) |
-
2017
- 2017-07-26 TW TW106210957U patent/TWM566332U/en unknown
-
2018
- 2018-06-05 CN CN201820858429.8U patent/CN208937623U/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWM566332U (en) | 2018-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |