CN208923139U - A kind of silicon-based monolithic infrared image element sensor - Google Patents
A kind of silicon-based monolithic infrared image element sensor Download PDFInfo
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- CN208923139U CN208923139U CN201821551758.4U CN201821551758U CN208923139U CN 208923139 U CN208923139 U CN 208923139U CN 201821551758 U CN201821551758 U CN 201821551758U CN 208923139 U CN208923139 U CN 208923139U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000000463 material Substances 0.000 claims abstract description 68
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011241 protective layer Substances 0.000 claims abstract description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 229910005898 GeSn Inorganic materials 0.000 claims abstract 6
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- -1 Phosphonium ion Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The application provides a kind of silicon-based monolithic infrared image element sensor, which includes: silicon-based substrate 11；Buffer layer 12 in silicon-based substrate 11；And infrared detector 13 and transistor 14 on buffer layer 12, wherein infrared detector 13 uses germanium tin (GeSn) material; 0.5~2 micron of 12 thickness of buffer layer; further include, as the protective layer 15 of anti-reflecting layer, to promote absorption of the infrared detector 13 to infrared light.According to the application, infrared detector is prepared using germanium tin (GeSn) material, therefore, can in conjunction with germanium tin (GeSn) material infrared band high response characteristic under standard CMOS process, photodetector and transistor are integrated in a silicon substrate to form monolithic infrared image element sensor.
Description
Technical field
This application involves technical field of semiconductors more particularly to a kind of silicon-based monolithic infrared image element sensors.
Background technique
Infrared image sensor military affairs, national defence, medical treatment, in terms of have important application.Currently, being used for
The semiconductor material, including III-V material InGaAs, GaInAsSb, InGaSb of infrared image sensor etc., II-VI material
Expect HgCdTe and IV race material Ge, GeSn etc..Iii-v detector is had excellent performance near infrared band, and II-VI group detector is then
It is mainly used in mid and far infrared wave band.
The basic unit of complementary metal oxide semiconductor (CMOS) imaging sensor is element sensor.Element sensor
It is divided into passive element sensor and active pixel sensor, is made of photodetector and one or more transistor.
It should be noted that the above description of the technical background be intended merely to it is convenient to the technical solution of the application carry out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes the application's
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Utility model content
In the prior art, no matter iii-v or II-VI group material, manufacturing cost is all very high, and can cause ring
Border problem；In addition, incompatible with silicon (Si) base CMOS technology, it is difficult to which photodetector and transistor are integrated in a substrate
In.
The embodiment of the present application provides a kind of silicon-based monolithic infrared image element sensor and its manufacturing method, the shape in silicon-based substrate
At the infrared detector prepared by germanium tin (GeSn) material.
Germanium tin GeSn material has biggish absorption coefficient to middle infrared band in short-wave infrared, can be used in preparing infrared
Detector；Also, GeSn material has carrier mobility more higher than germanium (Ge) material and silicon (Si) material, can be used for making
Standby high speed transistor.
In the silicon-based monolithic infrared image element sensor of the application, since infrared detector uses germanium tin (GeSn) material system
It is standby, it can be realized high response characteristic of germanium tin (GeSn) material in infrared band of infrared detector.
According to the one aspect of the embodiment of the present application, a kind of silicon-based monolithic infrared image element sensor is provided, comprising:
Silicon-based substrate；Buffer layer in the silicon-based substrate；And the infrared detector on the buffer layer
And transistor, wherein the infrared detector, 0.5~2 micron of the buffer layer thickness further include, as the guarantor of anti-reflecting layer
Sheath, to promote absorption of the infrared detector to infrared light.
In other embodiments, therefore the transistor can also can combine germanium tin using germanium tin (GeSn) material
(GeSn) material is in the high response characteristic of infrared band and the high mobility characteristic of germanium tin (GeSn) material transistors；Also, by
It is compatible with standard CMOS process in the preparation process of germanium tin (GeSn) material, it therefore, can be under standard CMOS process, by photoelectricity
Detector and transistor are integrated in a silicon substrate to form monolithic infrared image element sensor, realize monolithic infrared image element biography
The high integration and low cost of sensor.According to the other side of the embodiment of the present application, wherein the material of the silicon-based substrate is
Silicon on silicon or insulator, the cushioning layer material are germanium or germanium silicon (SiGe).
According to the other side of the embodiment of the present application, wherein the infrared detector from close to the buffer layer side to
It successively include: n-contact layer, infrared light absorbing layer and P type contact layer far from the buffer layer side, wherein the N-shaped connects
The material of contact layer and the P type contact layer is germanium (Ge) or germanium tin (GeSn), and the material of the infrared light absorbing layer is germanium tin
(GeSn)。
According to the other side of the embodiment of the present application, wherein the infrared detector and the transistor pass through conductor
Material electrical connection.
According to the other side of the embodiment of the present application, wherein the anti-protective layer is SiO2。
According to the other side of the embodiment of the present application, wherein 1 micron of the buffer layer thickness.
The application also provides a kind of manufacturing method of silicon-based monolithic infrared image element sensor, includes:
Buffer layer is formed in silicon-based substrate；Infrared detector and transistor are formed on the buffer layer, wherein
The infrared detector uses germanium tin (GeSn) material.
According to the other side of the embodiment of the present application, wherein form infrared detector and crystal on the buffer layer
Pipe, comprising:
The n-contact layer of the infrared detector is formed on the buffer layer；
Germanium tin (GeSn) material layer is formed in the n-contact layer；
The P type contact layer of the infrared detector is formed in germanium tin (GeSn) material layer；
Etch away germanium tin (GeSn) material layer between the infrared detector and the transistor.
According to the other side of the embodiment of the present application, wherein form infrared detector and crystal on the buffer layer
Pipe, further includes:
Form the protective layer for protecting the infrared detector and the transistor；And
The protective layer formed respectively with the P type contact layer of the infrared detector, n-contact layer, the crystalline substance
The contact electrode that source electrode, the drain and gate storehouse of body pipe are in electrical contact.
The beneficial effects of the present application are as follows: in silicon-based monolithic infrared image element sensor, germanium tin is used in infrared detector
(GeSn) in the case where material preparation, germanium tin (GeSn) material that can be realized infrared detector is special in the high response of infrared band
Property.Under standard CMOS process, photodetector and transistor are integrated in a silicon substrate to form monolithic infrared image element
Sensor.
Referring to following description and accompanying drawings, specific implementations of the present application are disclosed in detail, specify the original of the application
Reason can be in a manner of adopted.It should be understood that presently filed embodiment is not so limited in range.In appended power
In the range of the spirit and terms that benefit requires, presently filed embodiment includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in a other embodiment, is combined with the feature in other embodiment, or the feature in substitution other embodiment.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Detailed description of the invention
Included attached drawing is used to provide that a further understanding of the embodiments of the present application, and which constitute one of specification
Point, for illustrating presently filed embodiment, and with verbal description come together to illustrate the principle of the application.Under it should be evident that
Attached drawing in the description of face is only some embodiments of the present application, for those of ordinary skill in the art, is not paying wound
Under the premise of the property made is worked, it is also possible to obtain other drawings based on these drawings.In the accompanying drawings:
Fig. 1 is a schematic diagram of the silicon-based monolithic infrared image element sensor of the embodiment of the present application 1；
Fig. 2 is the equivalent circuit diagram of the silicon substrate infrared image element sensor of the embodiment of the present application 1；
Fig. 3 is a schematic diagram of the manufacturing method of the silicon-based monolithic infrared image element sensor of the embodiment of the present application 2；
Fig. 4 is a schematic diagram of the step 302 of Fig. 3；
Fig. 5 is the corresponding device sectional view of each step in an example of the embodiment of the present application 2.
Specific embodiment
Referring to attached drawing, by following specification, the aforementioned and other feature of the application be will be apparent.In specification
In attached drawing, specific implementations of the present application are specifically disclosed, which show wherein can be using the portion of the principle of the application
Divide embodiment, it will thus be appreciated that the application is not limited to described embodiment, on the contrary, the application includes falling into appended power
Whole modifications, modification and equivalent in the range of benefit requirement.
In the explanation of each embodiment of the application, for convenience of description, the direction for being parallel to the main surface of silicon-based substrate is claimed
For " transverse direction ", the direction that will be perpendicular to the main surface of silicon-based substrate is known as " longitudinal direction ".
Embodiment 1
The embodiment of the present application provides a kind of silicon-based monolithic infrared image element sensor.
Fig. 1 is a schematic diagram of the silicon-based monolithic infrared image element sensor of the present embodiment, as shown in Figure 1, the silicon substrate list
Piece infrared image element sensor 1 includes:
Silicon-based substrate 11；Buffer layer 12 in silicon-based substrate 11；And the infrared detector on buffer layer 12
13 and transistor 14, wherein infrared detector 13 uses germanium tin (GeSn) material.
In the silicon-based monolithic infrared image element sensor of the present embodiment, since infrared detector uses germanium tin (GeSn) material
Therefore preparation can be realized and use germanium tin (GeSn) material in the Gao Xiang of infrared band in silicon-based monolithic infrared image element sensor
Answer characteristic.
In another embodiment, transistor can also be prepared using germanium tin (GeSn) material, be utilized germanium tin (GeSn)
The preparation process of the high mobility characteristic of material transistors, germanium tin (GeSn) material is compatible with standard CMOS process, therefore, can
Under standard CMOS process, photodetector and transistor are integrated in a silicon substrate to form monolithic infrared image element sensing
Device realizes the high integration and low cost of monolithic infrared image element sensor.
In the present embodiment, the material of silicon-based substrate 11 is the silicon (SOI) on silicon (Si) or insulator.
In the present embodiment, the material of buffer layer 12 is germanium (Ge) or germanium silicon (SiGe).
In the present embodiment, as shown in Figure 1, in infrared detector 13, buffer layer is laterally away from from close to buffer layer 12
12 sides are successively are as follows: n-contact layer 131, infrared light absorbing layer 132 and P type contact layer 133.
In the present embodiment, the material of n-contact layer 131 can be the germanium (Ge) of N-shaped or the germanium tin (GeSn) of N-shaped；p
The material of type contact layer 133 can be the germanium (Ge) of p-type or the germanium tin (GeSn) of p-type.
The material of infrared light absorbing layer 132 is germanium tin (GeSn), for example, intrinsic germanium tin (GeSn).Infrared light is inhaled as a result,
Receive 132 pairs of infrared band absorption efficiency with higher of layer.
In the present embodiment, as shown in Figure 1, transistor 14 includes: source area 142 and drain region 143, stack 144.
In another embodiment, transistor 14 includes the source area being formed in germanium tin (GeSn) material layer 141
142 and drain region 143, and it is formed in the stack 144 on 141 surface of germanium tin (GeSn) material layer.
In the present embodiment, source area 142 and drain region 143 can be N-shaped, between source area 142 and drain region 143
Region corresponding to stack 144 can be p-type, form n type field effect transistor (FET) as a result,；Alternatively, source area 142
It can be p-type with drain region 143, the region corresponding to stack 144 between source area 142 and drain region 143 can be n
Type forms p-type field effect transistor (FET) as a result,.
In the present embodiment, stack 144 may include the high-k dielectric material layer 1441 and metal layer 1442 of stacking,
The material of the high-k dielectric material layer is, for example, hafnium oxide (HfO2), the material of the metal layer is, for example, titanium nitride (TaN), in addition,
The present embodiment can be without being limited thereto, and high-k dielectric material layer 1441 and metal layer 1442 are also possible to other materials.
As shown in Figure 1, infrared detector 13 and transistor 14 can be protected with protected seam 15, in addition, the protective layer 15 is also
Anti-reflecting layer can be doubled as, to promote absorption of the infrared detector 13 to infrared light.
In the present embodiment, contact electrode 16 can be formed on the surface of protective layer 15, each electrode 16 that contacts can pass through
Across protective layer 15 connecting material 17 respectively with the P type contact layer of infrared detector 13, n-contact layer, transistor 14 source
Pole, drain and gate storehouse are in electrical contact.
In the present embodiment, infrared detector 13 and transistor 14 can pass through the electrical connection (not shown) of conductor material, example
Such as, the drain electrode 142 of the pole n of infrared detector 13 and transistor 14 is electrically connected, and is formed as passive type infrared image element sensor as a result,
Or active infra-red element sensor.
Fig. 2 is the equivalent circuit diagram of the silicon substrate infrared image element sensor of the present embodiment.As shown in Fig. 2, in silicon substrate infrared image
In plain sensor 1, infrared detector 13 generates photoelectric current in response to extraneous infrared light, which passes through the source of transistor 14
Pole 142 exports.
According to the present embodiment, silicon-based monolithic infrared image element sensor can be in conjunction with germanium tin (GeSn) material in infrared band
Photodetector and transistor are integrated in a silicon substrate to form monolithic by high response characteristic under standard CMOS process
Infrared image element sensor realizes the high integration and low cost of monolithic infrared image element sensor.
Embodiment 2
Embodiment 2 provides a kind of manufacturing method of silicon-based monolithic infrared image element sensor, described in embodiment 1 for manufacturing
Silicon-based monolithic infrared image element sensor.
Fig. 3 is a schematic diagram of the manufacturing method of the silicon-based monolithic infrared image element sensor of the present embodiment, such as Fig. 3 institute
Show, in the present embodiment, the manufacturing method of the silicon-based monolithic infrared image element sensor may include:
Step 301 forms buffer layer 12 in silicon-based substrate 11；
Step 302 forms infrared detector 13 and transistor 14 on buffer layer 12, wherein infrared detector 13 uses
Germanium tin (GeSn) material.
Fig. 4 is a schematic diagram of the step 302 of Fig. 3, as shown in figure 4, step 302 may include steps of:
Step 3021, the n-contact layer that infrared detector is formed on buffer layer 12；
Step 3022 forms germanium tin (GeSn) material layer 132a in n-contact layer 131；
Step 3023, the P type contact layer that infrared detector is formed on germanium tin (GeSn) material layer 132a；
Step 3024, the source electrode 142 in formation transistor 14 and drain electrode 143, form the stack 144 of transistor,
In, stack 144 includes the high-k dielectric material layer 1441 and metal layer 1442 of stacking；And
Step 3025, germanium tin (GeSn) the material layer 132a for etching away between infrared detector 13 and transistor 14, as a result,
Germanium tin (GeSn) material layer being retained in infrared detector 13 is infrared light absorbing layer 132.
In another embodiment, the transistor 14 also uses germanium tin (GeSn) material, in step 3024, in germanium
Tin (GeSn) material layer 132a forms source electrode 142 and the drain electrode 143 of transistor 14, and germanium tin (GeSn) material layer 132a forms crystalline substance
The stack 144 of body pipe.
In addition, in the present embodiment, as shown in figure 4, step 302 can also include: after step 3025
Step 3026 forms protective layer 15 for protecting infrared detector 13 and transistor 14；And
Step 3027,15 surface of protective layer formed respectively with the P type contact layer, n-contact layer, crystalline substance of infrared detector 13
The contact electrode 16 that source electrode, the drain and gate storehouse of body pipe 14 are in electrical contact.
In the following, illustrating the manufacturer of the silicon-based monolithic infrared image element sensor of the application in conjunction with a specific example
Method.
Fig. 5 is the corresponding device sectional view of each step in the example, as shown in figure 5, in this example, silicon-based monolithic is infrared
The manufacturing method of element sensor includes the following steps:
Step 1, (a) of such as Fig. 5 are shown:
Utilize 0.5~2 micron of Ge buffer layer 12 of chemical vapor deposition method epitaxial growth thickness；Utilize chemical vapor deposition
Product method growth in situ N-shaped Ge contact layer is greater than 2*10 as n-contact layer 131, doping concentration19cm-3；Utilize chemical gaseous phase
Intrinsic GeSn layers of deposition method growth is used as germanium tin (GeSn) material layer 132a, with a thickness of 300nm；Utilize chemical vapor deposition side
Method growth in situ p-type Ge contact layer is used as n-contact layer 131.
Preferably, about 1 micron of the buffer layer thickness.
Step 2, (b) of such as Fig. 5 are shown:
By lithographic definition transistor area, and p-type Ge contact layer 133 is etched, exposed GeSn layers intrinsic；It is fixed by photoetching
The source region of adopted transistor 14 and drain region；Source region 142 and drain region 143 are formed using ion implanting and the method for annealing, can such as be injected
Phosphonium ion, Implantation Energy 20keV, dosage 1*1015cm-2, 400 DEG C of later period progress annealing 5 minutes；Stack layer is deposited, including
The hafnium oxide (HfO2) and 100nm titanium nitride (TaN) of 5nm, in addition, can also be other high-k dielectric layer and metal layer；Pass through photoetching
And etching forms stack 144.
In another embodiment, intrinsic GeSn layers for etching away 14 region of transistor completely can be taken, in the base of the rail
Conventional CMOS transistors are formed on the ground.
Step 3, (c) of such as Fig. 5 are shown:
The table top that GeSn infrared detector 13 is prepared by photoetching and etching technics is etched to N-shaped Ge contact layer, thus shape
At infrared light absorbing layer 132 and germanium tin (GeSn) material layer 141；Deposit SiO2Protective layer 15 can also play anti-reflecting layer
Effect；SiO is planarized using chemically mechanical polishing215 surface of protective layer.
Step 4, (d) of such as Fig. 5 are shown:
Contact area is defined by photoetching and etching；Metal is deposited, and passes through chemically mechanical polishing planarization material surface；
Contact electrode 16 is formed by photoetching and etching.
According to the present embodiment, silicon-based monolithic infrared image element sensor can be in conjunction with germanium tin (GeSn) material in infrared band
The high mobility characteristic of high response characteristic and germanium tin (GeSn) material transistors；Further, it is possible under standard CMOS process, by light
Electric explorer and transistor are integrated in a silicon substrate to form monolithic infrared image element sensor, realize monolithic infrared image element
The high integration and low cost of sensor.
Combine specific embodiment that the application is described above, it will be appreciated by those skilled in the art that this
A little descriptions are all exemplary, and are not the limitation to the application protection scope.Those skilled in the art can be according to the application
Spirit and principle various variants and modifications are made to the application, these variants and modifications are also within the scope of application.
Claims (6)
1. a kind of silicon-based monolithic infrared image element sensor, which is characterized in that the silicon-based monolithic infrared image element sensor includes:
Silicon-based substrate；
Buffer layer in the silicon-based substrate；And
Infrared detector and transistor on the buffer layer,
Wherein,
The infrared detector uses germanium tin (GeSn) material,
0.5~2 micron of the buffer layer thickness further includes,
As the protective layer of anti-reflecting layer, to promote absorption of the infrared detector to infrared light.
2. silicon-based monolithic infrared image element sensor as described in claim 1, which is characterized in that
The material of the silicon-based substrate is the silicon on silicon or insulator,
The cushioning layer material is germanium or germanium silicon (SiGe).
3. silicon-based monolithic infrared image element sensor as described in claim 1, which is characterized in that
The infrared detector successively includes: n-contact layer by being laterally away from the buffer layer side close to the buffer layer, infrared
Light absorbing layer and P type contact layer,
Wherein, the material of the n-contact layer and the P type contact layer is germanium (Ge) or germanium tin (GeSn), the infrared light
The material of absorbed layer is germanium tin (GeSn).
4. silicon-based monolithic infrared image element sensor as described in claim 1, which is characterized in that
The infrared detector and the transistor are electrically connected by conductor material.
5. silicon-based monolithic infrared image element sensor as described in claim 1, which is characterized in that
The protective layer is SiO2。
6. silicon-based monolithic infrared image element sensor as described in claim 1, which is characterized in that
1 micron of the buffer layer thickness.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821551758.4U CN208923139U (en) | 2018-09-21 | 2018-09-21 | A kind of silicon-based monolithic infrared image element sensor |
| PCT/CN2019/070515 WO2020057017A1 (en) | 2018-09-21 | 2019-01-05 | Silicon-based monolithic infrared pixel sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821551758.4U CN208923139U (en) | 2018-09-21 | 2018-09-21 | A kind of silicon-based monolithic infrared image element sensor |
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| CN208923139U true CN208923139U (en) | 2019-05-31 |
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| US6897471B1 (en) * | 2003-11-28 | 2005-05-24 | The United States Of America As Represented By The Secretary Of The Air Force | Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon |
| CN104993025B (en) * | 2015-07-01 | 2018-06-19 | 西安电子科技大学 | Silicon nitride film causes infrared LED device and preparation method thereof in the germanium tin strained |
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