TWI328282B - Complementary metal-oxide-semiconductor (cmos) image sensor and fabricating method thereof - Google Patents

Description

UMCD-2006-0218 21287twf.doc/e IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an image sensor and its related information - red-filled money casting body shadow county and ^ law. [Prior Art] Complementary CMOS image sensor as and mutual money semi-conducting _ ==2 The peripheral circuits are integrated in the same 曰H t port, which is easy to be cut and miscellaneous with other devices. In recent years; the towel has a low image sensing complementary metal oxygen running" image: reinforced: a complementary CMOS image complementary MOS image sensor - : a transistor composed of a photodiode It is composed of a Ρ-η junction formed by a multi-bottom, and an electro-crystal and a P-based crystal (n, lyNM0S). At present, the complementary n-type electrical structure includes a 3.Τ structure and a 4_τ frame + guide image sensor = a complementary MOS image sensor frame body), a source _ transistor (Dx) ), select, 曰 = include resetting the crystal? J (PD) ' and the 4 · τ architecture refers to the complementary gold gas: two:) and: the structure of the light two includes the transfer transistor (Τχ), reset guide (four) image The sensor crystal, the selection transistor and a photodiode body, the source follower is in the electric phase, and the complementary gold-oxygen image iron detector generally has a production of 1328282 UMCD-2006-0218 21287twf.doc/e Leakage problem. In general, the photodiode and the transistor in a complementary MOS image sensor generate leakage current. = The problem of leakage current will cause the complementary MOS image sensor to generate a relatively large dark current (dark euirent), which will increase the read noise and affect the image quality, and reduce the performance of the component.

The mountain is different from the complementary MOS image sensor of the 4-T architecture. 5, most of the dark 漭 θ in the complementary MOS image sensor is caused by the leakage current of the transfer transistor. . Therefore, the leakage current of the sensor has become one of the important topics in the development of the industry. [Inventive content] ° There are semiconductor flow problems. In view of this, the object of the present invention is to provide a complementary gold image sensing center and a manufacturing method thereof, which can reduce the leakage of the transistor and avoid the generation of dark current to improve image quality and quality.

造方f f # ^ Recording semiconductor image 的 ώ 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为Then, a dielectric layer is formed on the bottom and an undoped polysilicon layer is disposed to cover the undoped polycrystalline layer of the photo sensing region. Subsequently, the middle = formation, polycrystalline suppression, and then the movement 2 = layer to form a second mask layer, recommended early layer. Subsequently, the sub-implantation process type polycrystalline correction is then performed in the undischarged polycrystalline layer 6 UMCD-2006-0218 21287 twf.doc/e exposed by the second and Pi# rituals to form The P-type polysilicon layer is then removed, and the second mask layer is removed. Thereafter, a dielectric layer, an n-type polysilicon layer and a p-type polysilicon layer are defined to form a plurality of n-type gate structures and a p-type gate structure on the p-type well region of the transistor element region. Subsequently, a photodiode is formed in the substrate of the photo sensing region. According to the manufacturing method of the complementary MOS image sensor according to the embodiment of the present invention, the n-type gate structure is a transfer transistor, a reset transistor, a source follower transistor, and a selection transistor. Three of the gate structures 'p-type gate structure are the gate structure of the other transistor. According to a method of fabricating a complementary MOS image sensor according to an embodiment of the invention, the n-type gate structure is a reset transistor, a source follower transistor, and a selected transistor. Gate structure · The p-type gate structure is the gate structure of the other transistor. According to a method of fabricating a complementary MOS image sensor according to an embodiment of the present invention, the n-type dopant is, for example, phosphorus (phosphorus) or arsenic (As). According to the method of fabricating a complementary MOS image sensor according to an embodiment of the invention, the dose of the η剞 metamorphism is between 1χ10]4 and 5×101S ion/cm2. According to a method of fabricating a complementary MOS image sensor according to an embodiment of the present invention, the P-type dopant is, for example, boron (B) or a difluoride shed (BF2). According to a method of fabricating a complementary MOS image sensor according to an embodiment of the present invention, the P-type metamorphism has a dose of between lx 1 〇 13 〜 5 >< 1015 ion/cm 2 . Complementary MOS image according to an embodiment of the present invention 1328282 UMCD-2006-0218 2l287twf.doc/e The above-described photodiode formation method is, for example, a method of manufacturing a sensor, and a doping process. The present invention further provides a method for fabricating a complementary MOS image sensor. The method provides a substrate having a photo sensing region f-electrode 7 germanium region. A 'p'L well region is formed in the substrate of the transistor element region. Thereafter, a dielectric layer and a non-heteropolycrystalline layer are sequentially formed on the substrate. Next, a first ion implantation process is performed to form an n-type multi-sand layer in the n-type "Planting" layer. Subsequently, a mask layer is formed to expose the crystal of the photo sensing region and a portion of the transistor component region. Following this, the second ion implantation process was carried out, and the p-type ‘n exposed exposed n-type polycrystalline stone layer was transformed into a p-type polycrystalline stone layer. The electric 曰I#疋杜^ electric layer, the η-type polycrystalline shi layer and the p-type polycrystalline shi layer form a plurality of n-type structures and a Ρ &; on the shaped gate and the ^ configuration well area After the sense, a photodiode is formed in the substrate of the photo sensing region. The sensor implements the complementary CMOS image of the rider. The n-type gate structure described above is a transfer transistor, a gate structure, and a p-pole with a (four) transistor and a three-pole structure of the selected transistor is the gate structure of the other of the transistors. The complementary MOS image source _ W structure of the sensor implementation is a reset transistor, a gate structure, a two-pole structure, and a P/, a medium-sized transistor. The gate is very good. The sensor is substantially complementary to the MOS image, and the n-type dopant is, for example, phosphorus or arsenic. 8 1328282 UMCD-2006-0218 21287 twf.doc/e According to a method for fabricating a complementary MOS image sensor according to an embodiment of the invention, the dose of the η cleavage is between 1χ1〇ι4 and 5χ1015 ion Between /cm2. According to a method of fabricating a complementary MOS sensor according to an embodiment of the present invention, the p-doped dopant is, for example, boron or boron difluoride, in accordance with an embodiment of the present invention. The manufacturing method of the oxygen semiconductor scene sensor, the dose of the above p-type dopant is in the range of

Between ion/cm2. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The sensor includes a substrate, a photodiode, and an n-type gate structure. Among them, the substrate has 1 and 1 transistor element regions. The light diode is disposed in the light sensing area

The structure is disposed on the substrate of the transistor component region. The complementary MOS gate structure described in the embodiment of the present invention is a turn-to-source source-wheeled transistor and a selected Ray a _ electric body,

The gate structure is j: the gate structure of $: day*2, I according to the structure "sensor" above the type _*: is the weight of the mutual oxygen = the transistor and the selected transistor The open junction of the second type; the second type gate 9 1328282 UMCD-2006-0218 21287twf.doc/e is the gate structure of the other transistor. The complementary MOS image sense according to the embodiment of the present invention The photodiode of the detector is a p-n junction region. The invention further provides a complementary MOS image sensor. The complementary MOS image sensing gf comprises a substrate, a photodiode and a plurality of The n-type transistor, wherein the substrate has a photo sensing region and a transistor region, and the photodiode is disposed in the substrate of the photo sensing region. The plurality of n-type transistors are disposed in the transistor region. On the substrate, wherein the gate structure of the n-type transistor includes a p-type gate structure and a plurality of n-type gate structures, the complementary MOS image sensing benefits according to embodiments of the present invention, The above-mentioned n-type gate structure is a transfer transistor, a reset thunder crystal, and a The gate structure of the body and the selected transistor 3L gate structure is the gate structure of the other transistor. The salty system is made up of the complementary MOS image of the present invention. The shape of the gate structure is a reset transistor 'source coupler is two: the type of electricity _ sensing CMOS image 曰 complementary MOS image sensing 11 is the conventional η type ( P-poly) substitution, because the U-type gate structure can avoid the conventional complementary: the leakage current problem of the gold crystal, so - to cause the noise increase of the read-up; ==== 1328282 UMCD-2006-0218 21287twf The above and other objects, features, and advantages of the present invention will become more apparent and understood. The present invention is applicable to a complementary MOS image sensor having a 3·Τ structure or a 4-Τ structure. However, the present invention is not limited thereto, and the present invention is also applicable to φ other complementary gold having a plurality of transistor structures. Oxygen semiconductor image sensor. FIG. 1 is a complementary gold in accordance with an embodiment of the present invention. Semiconductor shadow • The schematic diagram of the top view of the sensing sensation. The edge of Fig. 2 is a cross-sectional view along the ΑΑ, cross-section of Figure 1. Please also refer to Figure 1 and Figure 2 'Complementary MOS image sensing of 4-Τ architecture The device 100 is composed of a substrate 101, a photodiode 1〇6, a p-type gate structure 108, and a plurality of n-type gate structures 110, 112, 114. The substrate 101 is, for example, a dream substrate or other semiconductor substrate. • An isolation structure 105 is defined in the substrate 101 to define a photo-sensing region 〇2 and a transistor device region 104, such as a shallow trench isolation structure (sti) or other isolation structure. In addition, a 井-type well region 103 is disposed in the substrate 101 of the transistor element region 〇4, and a plurality of n-type transistors (NMOS) are disposed on the 井-type well region 1〇3, and will be thereafter Do a detailed description. The photodiode 106 is disposed in the p-type well region 1〇3 of the photo sensing region 102 and the substrate 101. The photodiode 106 is a ρ-η junction region, which functions as 1328282 UMCD-2006-0218 21287twf.doc/e to receive the light source and convert the light energy into electrical energy. The photodiode 1〇6 may be formed by a P-type substrate of the photo sensing region 102 and an n-type doping region (not shown). The P-type gate structure 108 is disposed on the p-type well region 103 of the transistor element region 1〇4. The p-type drain structure 1〇8 is composed of a p-type polysilicon layer 1〇8&amp; and a dielectric layer 116. The p-type polysilicon layer 1〇8a is used as a p-type gate, (PP〇ly), dielectric layer. 116 is used as a gate oxide layer. In this embodiment, the gate structure in which the P-type gate structure 108 is a transfer transistor (Τχ) is taken as an example. The n-type gate structure is disposed on the P-type well region 103 of the transistor element region 1〇4. Every! ! The gate structure 11〇, 112, 114 is composed of an n-type polysilicon layer 110a, n2a, 114&amp; and a dielectric layer 116, respectively, wherein the n-type polysilicon layer n〇a, 12a, 14a is regarded as an n-type. The gate (n-poly), the dielectric layer 116 acts as a gate oxide layer. In the above, the n-type gate structures 110, 112, and 114 are gate structures of a reset transistor (Rx), a source follower transistor (Dx), and a selection transistor (Sx), respectively. In addition, the complementary MOS image sensor 100 further includes an n-type source/no-polar region 118' which is disposed on the p-type of the n-type gate structures ι10, n2, 114 and the p-type gate structure 108. In the substrate 1〇3. Therefore, a transfer transistor of p-poly NMOS and a reset transistor of n_p〇iy, a source follower transistor and a selection transistor can be formed. The present invention is not limited by the position of the plurality of transistors of the above embodiment, and the positional arrangement is adjusted depending on the circuit design or process requirements. In another embodiment, the complementary MOS image sensor 1 〇〇 12 1328282 212S7twf, doc/e

UMCD-2006-021S may also be a P-type gate structure 108 which is a gate structure of one of a reset transistor, a source follower transistor and a selected transistor, and the n-type gate structure 110, 112, 114 is The gate structure of the remaining three transistors. Of course, in another embodiment, the complementary transistor of the 3-inch structure of the complementary MOSFET is like a reset transistor of the sensor, the source follower transistor, and the gate structure of one of the selected transistors. It may be a p-type gate structure, and the gate structures of the other two transistors are an n-type gate structure. As in the above embodiment, the transfer transistor in the complementary MOS image sensor of the 4-turn structure is i&gt;-p〇ly NMOS, since the work function different of the pp〇ly NMOS is greater than n_p〇 The work function difference of 汐NM〇s, when the transistor is turned off during the operation of the device, the transfer transistor of p_p〇ly NM〇s accumulates a hole (h〇le) at the interface between the substrate and the gate oxide layer, thus reducing the transfer. The leakage current problem of the transistor. On the other hand, turning on the transistor %τ' creates a buried channel under the transfer transistor of the P-p〇lyNMOS to reduce the barrier of charge transfer, thus contributing to the problem of reducing leakage current. Hereinafter, a method of manufacturing the complementary MOS image sensor 100 will be described with reference to two embodiments. 3A-3F are schematic cross-sectional views showing a process of fabricating a complementary MOS image sensor according to an embodiment of the invention. First, referring to Fig. 3A, a substrate 301, such as a germanium substrate or other semiconductor substrate, is provided. An isolation &amp;303' can be formed in the substrate 301 to define the photo-sensing region 3〇2 and the transistor element region 3〇4, wherein the structure 3003 is, for example, a shallow trench isolation structure or other isolation structure. 13 1328282 UMCD-2006-0218 21287twf.doc/e The base 3〇1 mid-region 308 of the Japanese limpode 7M noon zone 304. |) Forming method of well region 308. Forming a photoresist layer on the base (four) (not shown in d, the substrate 3 in the transistor element region 3〇4 is suitable for its p-type dopant, and then removed. The photoresist layer. ^ (in) ς is formed in the entire substrate 301. In the case of the core region, before the formation of the 井-type well region 308, a layer of sacrificial oxide layer 3〇6, soil-] can be formed and the well region can be formed. In the ion implantation process, it is decontaminated except for the sacrifice mouth: after the well pattern, it is moved 31〇, and its material such as s 'soil &amp; 3〇1 forms a dielectric layer undoped polycrystalline stone 'Shi Xi. Formed on the dielectric layer 310 - for example, chemical vapor deposition method; 0 = formation method of the oligolithite layer 312 sensing region: 2 ::: Fig.] 曰 'formation - mask layer 314, to cover the region of the photonic crystal) 70 regions 3〇4 (ie, a transfer resistance layer is formed to be formed. Afterward _: heteropolycrystalline layer 312. The mask layer 314 is, for example, light. The exposed undoped polystyrene seed implantation process is implanted into the exposed n-type dopant, and the n-type dopant is n-type (tetra) 316. On 1Χ1014~5xini5. &amp;(Ρ) or arsenic (As), The dose of n-type dopants Ion/cm2. Then, please refer to the figure to remove the mask sound 314 ^. After the formation of the n-type polysilicon layer 316, the mask layer 3 type 2 polycrystalline layer is formed to form a layer s 318, for example, a photoresist layer. Then, proceed to the process of directing the impurity implants (4) to form the p-type polycrystalline germanium layer 320. The order is 312. Or boron difluoride (BF2), the two dopants of the p-type dopant are, for example, boron (B) ion / cm2. ; 1 ; ~ 5, xl 〇 13 subsequently 'please refer to Figure 3E, in p-type a The mask layer is removed. Then, after the dielectric layer is formed, the P-type multi-transfer layer 320 is formed to form a plurality of n-type gate structures on the transistor layer 316 3〇8, and the P layer is formed. The well region polar structure 322. The method for defining the dielectric layer 31〇y28曰 and the P-type P-type polycrystalline layer 320 is, for example, an it彳f-彳 layer 316 and a P-type gate structure 322 therein. The 作 / / / / / / / / / / / / / / / / / 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 324 District control area, The formation method is carried out: for a ρ-η Ρ type well area towel, to form the τ doping η type dopant is implanted in the ^ diode 33 (after formation of 3, also included in the Ρ type well area = ====: type source, one of the n-type implants will be implanted) or other suitable Figure 4 A to Figure 4 F is a method for manufacturing a gold-like conductor image sensor according to the present inventionΜ二补百先' '凊麦照图4Α' provides a substrate, substrate 4〇1 such as 15 !328282 UMCD-2006-0218 21287twf.doc/e 疋石夕 substrate or other semiconductor substrate. An insulating structure can be formed in the substrate towel to define a photo sensing region and a transistor element region 4, 4, wherein the isolation structure 403 is, for example, a shallow trench isolation structure or other isolation structure. Then, the formation method of forming a p-type well region in the substrate 4〇1 of the transistor element region 404 is, for example, 'forming a hetero layer (not (four)) on the photo sensing region 402, ς &amp; Then, the ion implantation process is performed by implanting a stone or other σ k-type p-type dopant in the substrate of the transistor element region, and then removing the photoresist layer. When 嫉 is a p-type well, a region is formed throughout the substrate 401. . In the other form: broadcast 4, before the formation of the type 13 well 408, the layer 406 ' may be vaporized on the substrate 401 to prevent the surface of the substrate 401 from being contaminated. Please refer to FIG. 4β for forming the p-type well region 408. Thereafter, the second step is followed by forming a dielectric layer on the substrate 401. The undoped polycrystals are formed on the dielectric layer, for example, by chemical gas deposition. Forming the method of preparing the celestial crystal layer 412 Then, please refer to the Mingtu dopant implanted in the undoped polycrystalline stone ’ ̄ ^: ion implantation process, the η type 仙. Wherein, (4) two layers of 412 _ to form an n-type polycrystalline layer

IxlO14~5&gt;&lt;1〇15^Bei ^If it is scale or broken, the dose of the push substance is between -ιοη/cm2. Please refer to FIG. 4D, and the rr··, the sensing area 402 and the part #also become the mask layer 418 'to expose the area of the photo crystal) "/;:= the area 4G4 (ie, predetermined) Forming a transfer power layer 416, the mask layer 418 is, for example, a photoresist 16 UMCD-2006-0218 2l287twf.doc/« i out: the penalty X:: sub-implantation process implanted p-type dopant, so that Exposure T) Static = Γ 16 is converted into P-type polycrystalline layer 420. In the center, the dose of ~ boron or difluorinated core type dopant is between (10) 13 ~ 2iI £ __ion / cm 2 . - ^ ^ $ -s- a , , , after the formation of the P-type polysilicon layer 420, the mask layer 418 is removed. Then, after the wind, the p-type polycrystalline germanium layer 1 〇, the n-type polycrystalline layer 416 ', g, A P1 well region pole structure 422 of a plurality of n-type idle 1 U4 is formed on the p-type well @ 408 of the transistor element region 404. In the above, I: 思 426, 428 and a P-type 剞 剞The method of the electric layer 410, the n-type polysilicon layer 416 and the Ρ-type solar layer 420, for example, η/ and, D 疋 - lithography and # etch process. Structure, with pole, ', mouth structure 424 ' 426, 42 8 is to reset the rain eagle carving, the secret with the device ^ crystal and select the opening of the transistor ^ 脰, the source of the receiver, please refer to Figure 4F, in the ancient, Β, Γ ~ and the base 401 formed, = Sense, the P-type well area of the area 402 is Taolu and the Gan-H is the first-pole body 43. The photodiode 430 is a Pn-p-well is a doping process, and the n-type dopant is implanted into the P-type well. Similarly, in the region 408 where the photodiode 43 is formed, an i source/cross H is formed in the region 408. The 440 ° n source/drain region 440 = Γ implant method 'Injecting scales or other suitable dopants into the p-type well region 408. In summary, the present invention is to describe the n-type gate of the n-type transistor in the complementary mode. ° The difference in work function of the D-poly NMOS is less than 闭, and the closed-pole structure is replaced by the work function of the knife edge is greater than np〇Iy NM〇S 27 1328282 UMCD-2006-0218 21287twf.d〇c/e difference, in During the operation of the device, when the transistor is turned off, the transistor of p_p〇ly NM〇S accumulates holes at the interface between the substrate and the gate oxide layer, thus reducing the leakage current problem of the Thunder body. On the other hand, when the transistor is turned on, Bian p NMOS transistor below the buried channel is generated in order to reduce charge-to / barrier, thus helping to reduce leakage current problem. Tokyo

Although the present invention has been disclosed in the above embodiments, it is not intended to be used in the present invention. Anyone skilled in the art may make some modifications and refinements in the absence of the present invention. This is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1 is a top plan view of an image sensor according to the present invention. The complementary oxymethylene film of the embodiment, - is shown in Figure 1 along AA, and the cross-sectional line of the cross-sectional view. Figures 3A to 3F are given according to an embodiment of the present invention: Measuring the manufacturing method of H = complementary

4A through 4F are views showing another embodiment 2 in accordance with the present invention. The method of manufacturing the MOS image sensor is not complementary to the stomach [Description of the main components]. 100: Complementary MOS image sensor 101, 301, 401: substrate 102, 302, 402: light sensing area 103, 308, 408: Ρ type well area 104, 304, 404: transistor element area 105, 303: isolation structure 1328282 UMCD-2006-0218 21287twf.doc/e 106, 330, 430: photodiode 108, 322, 422: p-type gate structure 108a, 320, 420: p-type polysilicon layer 428: η 110 , 112, 114, 324, 326, 328, 424, 426, gate structure 110a, 112a, 114a, 316, 416: n-type polysilicon layer 116, 310, 410: dielectric layer 118, 340, 440: n-type Source/drain regions 306, 406: sacrificial oxide layers 312, 412: undoped polysilicon layers 314, 318, 418: mask layer 19

Claims (1)

1328282 UMCD-2006-0218 21287twf.doc/i Patent application scope: a method for manufacturing a complementary MOS image sensor, comprising: a substrate having a light sensing region and a transistor body region forming a -P type well region Forming a dielectric layer on the substrate and - an undoped polycrystalline stone - an ion implanted _, a layer exposed by the -n type implanter; Forming a second mask layer covering the 11-type polysilicon layer; the iLL second ion implanting process will be-? Type ##植人 exposed to the polycrystalline germanium layer to form a P-type polycrystalline click · remove the second mask layer; 曰, 羲 the dielectric layer, the n-type multiple (four) layer and the (four) polycrystalline stone a plurality of n-type gates and a p-type gate structure formed on the p-type well region of the transistor element region; and a photodiode formed in the substrate of the photo sensing region . 2. The method of manufacturing a complementary MOS film according to claim 1, wherein the n-type gate structure is a transfer electric body, a reset transistor, and a source follower electric device. The gate structure of the crystal and the selected transistor, which is 20 1328282 UMCD-2006-0218 21287 twf.d〇〇/e, which is the gate structure of the other transistor. 3. The method of fabricating a complementary MOS image sensor according to claim 1, wherein the ϋ-type gate structure is a reset transistor, a source follower transistor, and a selection transistor One of the gate structures, the gate structure is the gate structure of the other transistor. 4. The method of fabricating a complementary oxymethylene image sensor as described in claim 1, wherein the n-type dopant comprises phosphorus (ρ) or arsenic (As). 5. The method of manufacturing a complementary image sensor as described in the scope of the patent application, wherein the dynamic dopant is between _ion/cm2. i~iiL 6. If you apply for a patent range! The manufacturing method of the inter-image sensor described in the item is sniper #^飞金乳影影-F2). Going to it? Type #质includes (8) or difluorinated 7. As in the patent application, the method of manufacturing the sensor is as follows: ion/cm2/, mussel's (four) amount is between 1x101! 8. Apply Patented first image sensor manufacturing method, retracement = complementary MOS film-doping process. The polar body forming method includes a complementary gold-oxygen semiconductor package: a method of manufacturing a smear-like sensor, the component transistor unit provides a substrate having a sensing area and a surface. UMCD-2006-0218 21287twf.d〇c/e forming a P-type well region in the substrate of the transistor element region; sequentially forming a dielectric layer and an undoped polysilicon layer on the substrate; Performing a first ion implantation process, implanting an n-type dopant into the undoped polysilicon layer to form an n-type polysilicon layer; forming a mask layer to expose the photo sensing region and a portion thereof Forming the n-type polysilicon layer in the transistor region; performing a second ion implantation process to implant a p-type dopant to transform the exposed n-type polysilicon layer into a p-type polysilicon layer; defining the dielectric layer And the p-type polycrystalline germanium layer and the p-type polycrystalline layer, forming a plurality of n-type gates, structures and a germanium gate structure on the p-type well region of the transistor element region; A photodiode is formed in the substrate of the photo sensing region. 10' The method for manufacturing a complementary MOS image sensor according to claim 9, wherein the 呰n gate structure is a transfer transistor, a reset transistor, and a source follower transistor. And the gate structure of three of the selected transistors, the p-type gate structure is the gate structure of the other of the transistors. 11. The method of fabricating a complementary MOS image sensor according to claim 9 wherein the 竣11 gate structure is a reset transistor, a source follower transistor, and a selective transistor. Two of the gate structures, the 闸-type gate structure is the gate structure of the other/transistor. 12. A method of fabricating a complementary MOS image sensor, wherein the bismuth dopant comprises phosphorus or arsenic, as described in claim 9. A method for fabricating a complementary MOS image sensor according to claim 9 wherein the dose of the n-type dopant is between 1 and 10]4. Between ~5xl015ion/cm2. 14. The method of fabricating a complementary MOS image sensor according to claim 9, wherein the P-type dopant comprises boron or boron difluoride. 15. The method of fabricating a complementary MOS image sensor according to claim 9, wherein the dose of the P-type dopant is between 1 x lO13 and 5 x 10 3 ion/cm 2 . 16. The method of fabricating a complementary MOS image sensor according to claim 9, wherein the method of forming the photodiode comprises performing a doping process. 17. A complementary MOS image sensor, comprising: a substrate having a photo sensing region and a transistor component region, a photodiode disposed in the photo sensing region In the substrate, a p-type gate structure is disposed on the substrate of the transistor region; and a plurality of n-type gate structures are disposed on the substrate of the transistor region. 18. The complementary MOS image sensor of claim 17, wherein the n-type gate structure is a transfer transistor, a reset transistor, a source follower transistor, and a selection of electricity. A gate structure of three of the crystals, the gate structure of which is the gate structure of the other of the transistors. </ RTI> <RTIgt;随 The gate transistor and the gate electrode of the selected transistor are the heterostructures of the other transistor. 20. The complementary image sensor described in claim 17 wherein the photodiode is a -Ρ-η junction region. 21. A complementary CMOS image sensor comprising: a substrate having a photo sensing region and a transistor cell region; a photodiode disposed in the substrate of the photo sensing region; and a plurality of n-type crystals disposed on the cell The substrate of the crystal element region, the interpole structures of the n-type transistors include a -p-type gate structure and a plurality of n-type gate structures. — a ° ^ 22 · Complementary MOS as described in claim 21 The two-image sensing structure is such that the n-type gate structure is a transfer transistor, a reset crystal, a source follower transistor, and a gate of three of the selected transistors. The 闸-type gate structure is a gate structure of another transistor. ^ 23. As claimed in the scope of claim 21, the complementary MOS: image sensor, which is the n-type gate, the crucible is the reset transistor, the source is coupled with the thief and the selected electricity The gate structure of the crystal; the p-type gate structure is a blue-switching structure of the other transistor. 24. A complementary MOS image sensor as described in claim 21, wherein the photodiode is a junction region. twenty four