CN111755553A - Lead-doped germanium infrared photoelectric detector and forming method thereof - Google Patents

Lead-doped germanium infrared photoelectric detector and forming method thereof Download PDF

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CN111755553A
CN111755553A CN201910242772.9A CN201910242772A CN111755553A CN 111755553 A CN111755553 A CN 111755553A CN 201910242772 A CN201910242772 A CN 201910242772A CN 111755553 A CN111755553 A CN 111755553A
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germanium
layer
doped
contact layer
lead
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CN111755553B (en
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汪巍
方青
涂芝娟
曾友宏
蔡艳
王庆
王书晓
余明斌
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Shanghai Industrial Utechnology Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the technical field of photoelectron, in particular to a lead-doped germanium infrared photoelectric detector and a forming method thereof. The lead-doped germanium infrared photoelectric detector comprises a silicon substrate and a device structure positioned on the surface of the silicon substrate; the device structure comprises a lower contact layer, a germanium absorption layer and an upper contact layer which are sequentially stacked along a direction vertical to the silicon substrate; lead element is doped in the germanium absorption layer to expand the detection range of the germanium infrared photoelectric detector. The invention enables the photoelectric detector to realize high-efficiency absorption in the short wave infrared to medium wave infrared wave bands, and improves the detection range and detection sensitivity of the infrared photoelectric detector.

Description

Lead-doped germanium infrared photoelectric detector and forming method thereof
Technical Field
The invention relates to the technical field of photoelectron, in particular to a lead-doped germanium infrared photoelectric detector and a forming method thereof.
Background
The infrared photoelectric detector has wide application in the fields of communication, night vision, guidance, astronomical observation, biomedical treatment and the like. The infrared detectors commonly used today are mainly group iii-v material photodetectors and group ii-v material photodetectors. However, the iii-v materials and ii-v materials have a problem of incompatibility with the Si-based CMOS (Complementary Metal oxide semiconductor) standard process platform, increasing device cost and reducing device reliability.
Compared with the traditional III-V family infrared photoelectric detector and II-V family infrared photoelectric detector, the IV family infrared photoelectric detector is compatible with the Si (silicon) -based CMOS process in the preparation process, and has the potential advantages of small volume, easy integration, low cost, high performance and the like. Ge (germanium) photodetectors based On Si substrates or SOI (Silicon On Insulator) substrates have found wide application in the fields of communications and sensing. However, when the wavelength of a single Ge material is greater than 1.55 micrometers, the absorption coefficient is sharply reduced, so that the Ge photodetector cannot meet the detection requirements of short-wave infrared and even middle-infrared bands, and the detection range of the Ge photodetector is limited.
Therefore, how to improve the detection range of the Ge detector, thereby expanding the application field of the Ge detector, is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a lead-doped germanium infrared photoelectric detector and a forming method thereof, which are used for solving the problem that the detection range of the existing Ge detector is narrow.
In order to solve the above problems, the present invention provides a lead-doped germanium infrared photodetector, which includes a silicon substrate and a device structure located on the surface of the silicon substrate; the device structure comprises a lower contact layer, a germanium absorption layer and an upper contact layer which are sequentially stacked along a direction vertical to the silicon substrate; lead element is doped in the germanium absorption layer to expand the detection range of the germanium infrared photoelectric detector.
Preferably, the device structure further comprises:
a first buffer layer between the lower contact layer and the germanium absorption layer;
a second buffer layer between the germanium absorber layer and the upper contact layer.
Preferably, the material of the lower contact layer is silicon, the material of the upper contact layer is silicon or germanium, the lower contact layer has first doping ions therein, the upper contact layer has second doping ions therein, and the first doping ions and the second doping ions have opposite conductivity types.
Preferably, the first buffer layer and the second buffer layer are both made of germanium or silicon germanium.
Preferably, the molar fraction of the lead element in the germanium absorption layer is more than 0.1% and less than 2%.
In order to solve the above problems, the present invention further provides a method for forming a lead-doped germanium infrared photodetector, including the following steps:
providing a silicon substrate;
forming a lower contact layer on the surface of the silicon substrate;
forming a germanium absorption layer on the surface of the lower contact layer, wherein the germanium absorption layer is doped with lead element so as to expand the detection range of the germanium infrared photoelectric detector;
and forming an upper contact layer on the surface of the germanium absorption layer.
Preferably, the step of forming the germanium absorption layer on the surface of the silicon substrate includes:
forming a first buffer layer on the surface of the lower contact layer;
and forming a germanium absorption layer on the surface of the first buffer layer.
Preferably, the step of forming the upper contact layer on the surface of the germanium absorption layer comprises:
forming a second buffer layer on the surface of the germanium absorption layer;
and forming an upper contact layer on the surface of the second buffer layer.
Preferably, the step of forming the germanium absorption layer on the surface of the lower contact layer includes:
and carrying out in-situ epitaxial growth on the surface of the lower contact layer by adopting a magnetron sputtering method to form a lead element doped germanium material layer so as to form the germanium absorption layer.
Preferably, the molar fraction of the lead element in the germanium absorption layer is more than 0.1% and less than 2%.
According to the lead-doped germanium infrared photoelectric detector and the forming method thereof, lead elements are doped in the germanium absorption layer, so that the photoelectric detector can realize high-efficiency absorption in short wave infrared to medium wave infrared bands. Easy integration with Si compared to iii-v infrared photodetectors; compared with the existing Ge photoelectric detector, the Ge photoelectric detector has wider detection range.
Drawings
Fig. 1 is a schematic structural diagram of a lead-doped germanium infrared photodetector according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for forming a lead-doped germanium infrared photodetector according to an embodiment of the present invention;
fig. 3A-3E are schematic cross-sectional views of the main processes of forming a lead-doped ge infrared photodetector according to embodiments of the present invention.
Detailed Description
The following describes in detail specific embodiments of the lead-doped germanium infrared photodetector and the method for forming the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides a lead-doped germanium infrared photodetector, and fig. 1 is a schematic structural diagram of the lead-doped germanium infrared photodetector according to the present embodiment. As shown in fig. 1, the lead-doped germanium infrared photodetector provided in this embodiment includes a silicon substrate 10 and a device structure located on a surface of the silicon substrate 10; the device structure comprises a lower contact layer 11, a germanium absorption layer 12 and an upper contact layer 13 which are sequentially stacked along a direction perpendicular to the silicon substrate 10; the germanium absorption layer 12 is doped with lead element to extend the detection range of the germanium infrared photodetector.
Specifically, ambient light is injected into the device structure in the direction of the arrows in fig. 1 (i.e., the direction perpendicular to the silicon substrate 10). In this embodiment, lead is doped in the germanium absorption layer 12, which can directly reduce the band gap width of the germanium material, so that the absorption range of the germanium absorption layer 12 is greatly extended, and the germanium infrared photodetector has a wider detection range and higher detection sensitivity. For example, when the composition (i.e. mole fraction) of lead in the germanium absorption layer 12 is 1%, the band gap width of the germanium material can be reduced to about 0.41eV, and the detection range of the lead-doped germanium infrared photodetector can be extended to a 3 μm band; for another example, when the lead content of the germanium absorption layer 12 is 1.5%, the band gap width of the germanium material can be directly shifted to 0 eV.
The germanium absorption layer doped with lead in the present embodiment may be formed by in-situ epitaxial growth using a magnetron sputtering method, or may be formed by implanting lead ions into the germanium material layer, and those skilled in the art may select the germanium absorption layer according to actual needs.
Those skilled in the art can adjust the doping concentration of the lead element in the germanium absorption layer 12 according to actual needs to obtain infrared photodetectors with different detection ranges and detection sensitivities. In order to further extend the detection range of the lead-doped germanium infrared photodetector, it is preferable that the molar fraction of the lead element in the germanium absorption layer 12 is greater than 0.1% and less than 2%. By setting the composition of the lead element in the germanium absorption layer 12 to be more than 0.1% and less than 2%, the detection range of the infrared photodetector can be extended to 3 μm or more. More preferably, the molar fraction of the lead element in the germanium absorption layer 12 is 0.4%.
Preferably, the device structure further comprises:
a first buffer layer 14 between the lower contact layer 11 and the germanium absorption layer 12;
a second buffer layer 15 between the germanium absorber layer 12 and the upper contact layer 13.
Preferably, the material of the lower contact layer 11 is silicon, the material of the upper contact layer 13 is silicon or germanium, the lower contact layer 11 has first doping ions therein, the upper contact layer 13 has second doping ions therein, and the first doping ions and the second doping ions have opposite conductivity types.
Preferably, the materials of the first buffer layer 14 and the second buffer layer 15 are both germanium or silicon germanium.
The first doped ions are N-type ions and the second doped ions are P-type ions, or the first doped ions are P-type ions and the second doped ions are N-type ions, the first doped ions are N-type ions and the second doped ions are P-type ions, and the silicon substrate 10 may be a silicon substrate with a crystal orientation of 100. the lower contact layer 11 may be a silicon material layer doped with N-type ions and has a doping concentration of 2 × 1019cm-3The upper contact layer 13 is a Ge material layer doped with P-type ions or a polysilicon material layer doped with P-type ions, and the doping concentration can be 2 × 1019cm-3(ii) a The material of the first buffer layer 14 is Ge or SiGe; the second buffer layer 15 is made of Ge or SiGe. The surfaces of the lower contact layer 11 and the upper contact layer 13 are covered with antireflection layers 16, an N-electrode 17 penetrates through the antireflection layers 16 to be in contact with the lower contact layer 11, and a P-electrode 18 penetrates through the antireflection layers 16 to be in contact with the upper contact layer 13. The material of the antireflective layer 16 may be, but is not limited to, silicon dioxide; the materials of the N-electrode 17 and the P-electrode 18 can be both metallic aluminum.
Furthermore, the present embodiment further provides a method for forming a lead-doped germanium infrared photodetector, fig. 2 is a flowchart of a method for forming a lead-doped germanium infrared photodetector according to an embodiment of the present invention, fig. 3A to 3E are schematic process cross-sectional views of a lead-doped germanium infrared photodetector according to an embodiment of the present invention, and a specific structure of a lead-doped germanium infrared photodetector formed according to the present embodiment may be referred to fig. 1. As shown in fig. 1-2 and 3A-3E, the method for forming a lead-doped germanium infrared photodetector provided in this embodiment includes the following steps:
in step S21, the silicon substrate 10 is provided. The silicon substrate 10 may be a silicon substrate with a crystal orientation 100.
In step S22, a lower contact layer 11 is formed on the surface of the silicon substrate 10.
Specifically, after the silicon substrate 10 is cleaned, a lower contact layer region is defined on the surface of the silicon substrate 10, and a first doping ion, such as an N-type ion, is implanted into the silicon substrate 10 in the lower contact layer region by ion implantation to form the lower contact layer 11, wherein the doping concentration of the first doping ion in the lower contact layer 11 is 2 × 1019cm-3。
Step S23 is to form a germanium absorption layer 12 on the surface of the lower contact layer 11, where the germanium absorption layer 12 is doped with lead element to expand the detection range of the germanium infrared photodetector, as shown in fig. 3B.
Preferably, the step of forming the germanium absorption layer on the surface of the silicon substrate includes:
forming a first buffer layer 14 on the surface of the lower contact layer 11, as shown in fig. 3A;
a germanium absorption layer 12 is formed on the surface of the first buffer layer 14, as shown in fig. 3B.
Specifically, a magnetron sputtering method or the like may be used to epitaxially grow an i-Ge (intrinsic germanium) material layer on the surface of the lower contact layer 11 to form the first buffer layer 14. The thickness of the first buffer layer 14 can be selected by those skilled in the art according to actual needs, for example, the thickness of the first buffer layer 14 can be about 500 nm.
In other embodiments, the material of the first buffer layer 14 may also be SiGe.
In step S24, an upper contact layer 13 is formed on the surface of the germanium absorption layer 12, as shown in fig. 3C.
Preferably, the step of forming the upper contact layer 13 on the surface of the germanium absorption layer 12 includes:
forming a second buffer layer 15 on the surface of the germanium absorption layer 12;
and forming an upper contact layer 13 on the surface of the second buffer layer 15.
Specifically, a magnetron sputtering method may be used to epitaxially grow an i-Ge material layer or a SiGe material layer on the surface of the germanium absorption layer 12 to form the second buffer layer 15, where the thickness of the second buffer layer 15 may be selected by those skilled in the art according to actual needs, for example, the thickness of the second buffer layer 15 may be about 500nm, then, a magnetron sputtering method is used again to epitaxially grow an i-Ge cap layer with a thickness of about 200nm on the surface of the second buffer layer 15, then, second doping ions, such as P-type ions, are implanted into the i-Ge cap layer to form the upper contact layer 13, where the doping concentration of the second doping ions in the upper contact layer 13 is 2 × 1019cm-3。
Preferably, the step of forming the germanium absorption layer 12 on the surface of the lower contact layer includes:
and epitaxially growing a lead-doped germanium material layer on the surface of the lower contact layer 11 in situ by adopting a magnetron sputtering method to form the germanium absorption layer 12.
Specifically, a magnetron sputtering method may be used to epitaxially grow a lead-doped germanium material layer on the surface of the first buffer layer 14 away from the lower contact layer 11, so as to form the germanium absorption layer 12. Wherein, the molar fraction of the lead element in the germanium absorption layer 12 is preferably more than 0.1% and less than 2%. In this embodiment, the composition of the lead element is 0.4%. The thickness of the germanium absorption layer 12 is not limited to about 500nm, and can be selected by those skilled in the art according to actual needs.
After the upper contact layer 13 is formed, photolithography and reactive ion etching techniques may be used to etch away a portion of the lower contact layer 11, a portion of the first buffer layer 14, a portion of the germanium absorption layer 12, a portion of the second buffer layer 15, and a portion of the upper contact layer 13, so as to form a step on the surface of the lower contact layer 11. The step comprises a lower mesa and an upper mesa protruding from the surface of the lower mesa, and the remaining first buffer layer 14, the germanium absorption layer 12, the second buffer layer 15 and the upper contact layer 13 are sequentially stacked on the upper mesa along a direction perpendicular to the silicon substrate 10, as shown in fig. 3D. Then, depositing a passivation material on the lower surface of the lower contact layer 11 and the upper surface of the upper contact layer 13 to form an anti-reflection layer 16; etching the anti-reflection layer 16 by adopting photoetching and dry etching processes to form an N-electrode groove exposing the lower contact layer 11 and a P-electrode groove exposing the upper contact layer 13; finally, metal materials are respectively deposited in the N-electrode groove and the P-electrode groove by adopting magnetron sputtering and other processes to form an N-electrode 17 and a P-electrode 18, as shown in FIG. 3E. Wherein the metal material may be, but is not limited to, metallic aluminum. The thickness of the anti-reflection layer 16 can be selected by those skilled in the art according to actual needs, and may be, for example, about 400 nm.
In the lead-doped germanium infrared photoelectric detector and the forming method thereof provided by the specific embodiment, lead is doped in the germanium absorption layer, so that the photoelectric detector can realize efficient absorption in the short-wave infrared band to the medium-wave infrared band. Easy integration with Si compared to iii-v infrared photodetectors; compared with the existing Ge photoelectric detector, the Ge photoelectric detector has wider detection range.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. A lead-doped germanium infrared photoelectric detector is characterized by comprising a silicon substrate and a device structure positioned on the surface of the silicon substrate; the device structure comprises a lower contact layer, a germanium absorption layer and an upper contact layer which are sequentially stacked along a direction vertical to the silicon substrate; lead element is doped in the germanium absorption layer to expand the detection range of the germanium infrared photoelectric detector.
2. The lead-doped germanium infrared photodetector of claim 1, wherein the device structure further comprises:
a first buffer layer between the lower contact layer and the germanium absorption layer;
a second buffer layer between the germanium absorber layer and the upper contact layer.
3. The lead-doped germanium infrared photodetector of claim 1, wherein the material of the lower contact layer is silicon, the material of the upper contact layer is silicon or germanium, the lower contact layer has first doped ions therein, the upper contact layer has second doped ions therein, and the first doped ions and the second doped ions have opposite conductivity types.
4. The lead-doped germanium infrared photodetector of claim 3, wherein the first buffer layer and the second buffer layer are both made of germanium or silicon germanium.
5. The lead-doped germanium infrared photodetector of claim 1, wherein the molar fraction of lead element in the germanium absorption layer is greater than 0.1% and less than 2%.
6. A method for forming a lead-doped germanium infrared photoelectric detector is characterized by comprising the following steps:
providing a silicon substrate;
forming a lower contact layer on the surface of the silicon substrate;
forming a germanium absorption layer on the surface of the lower contact layer, wherein the germanium absorption layer is doped with lead element so as to expand the detection range of the germanium infrared photoelectric detector;
and forming an upper contact layer on the surface of the germanium absorption layer.
7. The method as claimed in claim 6, wherein the step of forming a germanium absorption layer on the surface of the silicon substrate comprises:
forming a first buffer layer on the surface of the lower contact layer;
and forming a germanium absorption layer on the surface of the first buffer layer.
8. The method as claimed in claim 6, wherein the step of forming the upper contact layer on the surface of the germanium absorption layer comprises:
forming a second buffer layer on the surface of the germanium absorption layer;
and forming an upper contact layer on the surface of the second buffer layer.
9. The method as claimed in claim 6, wherein the step of forming a germanium absorption layer on the surface of the lower contact layer comprises:
and carrying out in-situ epitaxial growth on the surface of the lower contact layer by adopting a magnetron sputtering method to form a lead element doped germanium material layer so as to form the germanium absorption layer.
10. The method as claimed in claim 6, wherein the molar fraction of Pb in the Ge absorbing layer is greater than 0.1% and less than 2%.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101557074A (en) * 2008-04-10 2009-10-14 电子科技大学 Silica-based germanium electrical injection laser and production method thereof
US20120025212A1 (en) * 2008-09-16 2012-02-02 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University GeSn Infrared Photodetectors
US20130313579A1 (en) * 2010-11-19 2013-11-28 John Kouvetakis Dilute sn-doped ge alloys
CN104993025A (en) * 2015-07-01 2015-10-21 西安电子科技大学 Silicon nitride membrane strained GeSn infrared LED device and preparation method thereof
CN105742397A (en) * 2016-03-14 2016-07-06 电子科技大学 Broadband photodiode for detection from visible light to infrared light
CN106531822A (en) * 2016-11-29 2017-03-22 电子科技大学 Photoelectric detector
CN109494277A (en) * 2018-12-04 2019-03-19 陕西理工大学 A kind of Long Wave Infrared Probe and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101557074A (en) * 2008-04-10 2009-10-14 电子科技大学 Silica-based germanium electrical injection laser and production method thereof
US20120025212A1 (en) * 2008-09-16 2012-02-02 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University GeSn Infrared Photodetectors
US20130313579A1 (en) * 2010-11-19 2013-11-28 John Kouvetakis Dilute sn-doped ge alloys
CN104993025A (en) * 2015-07-01 2015-10-21 西安电子科技大学 Silicon nitride membrane strained GeSn infrared LED device and preparation method thereof
CN105742397A (en) * 2016-03-14 2016-07-06 电子科技大学 Broadband photodiode for detection from visible light to infrared light
CN106531822A (en) * 2016-11-29 2017-03-22 电子科技大学 Photoelectric detector
CN109494277A (en) * 2018-12-04 2019-03-19 陕西理工大学 A kind of Long Wave Infrared Probe and preparation method thereof

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