CN208835071U

CN208835071U - A kind of novel silicon base diode applied to photoelectrical coupler

Info

Publication number: CN208835071U
Application number: CN201821513833.8U
Authority: CN
Inventors: 杨为家; 吴质朴; 何畏; 陈强
Original assignee: SHENZHEN AOLUNDE COMPONENTS CO Ltd
Current assignee: SHENZHEN AOLUNDE COMPONENTS CO Ltd
Priority date: 2018-09-13
Filing date: 2018-09-13
Publication date: 2019-05-07
Anticipated expiration: 2028-09-13

Abstract

The utility model discloses a kind of novel silicon base diodes applied to photoelectrical coupler, including p-type electrode, p-type Si single crystalline substrate, depletion layer, Si layers of highly doped n-type, SiO2 insulating layer and n-type electrode, depletion layer is additionally arranged in an end face of p-type Si single crystalline substrate, then setting highly doped n-type Si layers and n-type electrode are successively covered in the other end of depletion layer, it is not corrupted to the perfection of lattice of p-type Si single crystalline substrate, it is different from and directly carried out p-type and n-type doping in the different zones of substrate in the past, remain p-type Si single crystalline substrate perfection of lattice, improve crystal quality, substantially increase the performance of silicon-based diode.

Description

A kind of novel silicon base diode applied to photoelectrical coupler

Technical field

The utility model relates to diode field, especially a kind of novel silicon base diode applied to photoelectrical coupler.

Background technique

Silicon-based diode is semiconductor devices important at present, can play weight in fields such as receiver, detector, rectifiers The effect wanted.Currently, silicon-based diode has been widely used in electronic product, for example, mobile phone, computer, Communication, radar etc..Currently, silicon-based diode plays highly important role in photoelectrical coupler --- receiver. It can be predicted that photoelectrical coupler has the status that do not replace in production and production.Therefore, in following epoch, Silicon-based diode will continue to play positive effect.

By the development of many years, the preparation process of silicon-based diode is very mature.Pn-junction in silicon-based diode at present Structure be mainly directly to carry out p-type and n-type doping in the different zones of Si substrate, to form pn-junction, the pn of above structure Surplus is in a defect --- and foreign atom seriously destroys the integrality of substrate lattice, reduces the crystal quality of substrate, into And it exerts a certain influence to the performance of silicon-based diode.

Utility model content

To solve the above problems, the purpose of this utility model is to provide a kind of novel silicon bases applied to photoelectrical coupler Diode can retain the integrality of substrate lattice, improve the crystal quality of substrate, greatly improve the property of silicon-based diode Energy.

The technical solution adopted by the utility model to solve the problem is as follows:

A kind of novel silicon base diode applied to photoelectrical coupler, it is characterised in that: including p-type electrode, p-type Si monocrystalline Substrate, depletion layer, Si layers of highly doped n-type, SiO2 insulating layer and n-type electrode, an end face of the p-type Si single crystalline substrate are provided with The p-type electrode, other end are provided with the depletion layer and SiO2 insulating layer, and the SiO2 insulating layer is still around setting In the surrounding of depletion layer, described highly doped n-type Si layers are covered on one side of the depletion layer far from p-type Si single crystalline substrate, the n Type electrode is covered on the surface of SiO2 insulating layer and Si layers of highly doped n-type simultaneously.

Further, the depletion layer is amorphous Al2O3 depletion layer.

Further, the depletion layer is amorphous Si depletion layer.

Further, the depletion layer with a thickness of 1-5nm.

Further, N-shaped Si layers is adulterated for Al for described highly doped n-type Si layers.

Further, described highly doped n-type Si layers with a thickness of 300-1200nm.

Further, the n-type electrode is N-shaped Al electrode.

Further, the n-type electrode with a thickness of 200-450nm.

The beneficial effects of the utility model are: a kind of novel silicon base applied to photoelectrical coupler that the utility model uses Diode, including p-type electrode, p-type Si single crystalline substrate, depletion layer, Si layers of highly doped n-type, SiO2 insulating layer and n-type electrode, in p One end face of type Si single crystalline substrate is additionally arranged depletion layer, then successively covers setting highly doped n-type Si in the other end of depletion layer Layer and n-type electrode, are not corrupted to the perfection of lattice of p-type Si single crystalline substrate, are different from the different zones in the past in substrate P-type and n-type doping are directly carried out, p-type Si single crystalline substrate perfection of lattice is remained, improves crystal quality, greatly improve The performance of silicon-based diode.

Detailed description of the invention

The utility model is described in further detail with example with reference to the accompanying drawing.

Fig. 1 is a kind of structure sectional view of the novel silicon base diode applied to photoelectrical coupler of the utility model.

Specific embodiment

Referring to Fig.1, a kind of novel silicon base diode applied to photoelectrical coupler of the utility model, including p-type electrode 100, p-type Si single crystalline substrate 200, depletion layer 400, highly doped n-type Si layer 500, SiO2 insulating layer 300 and n-type electrode 600, institute The end face for stating p-type Si single crystalline substrate 200 is provided with the p-type electrode 100, and other end is provided with the depletion layer 400 and SiO2 insulating layer 300, the SiO2 insulating layer 300 are still around the surrounding that depletion layer 400 is arranged in, the highly doped n-type Si layer 500 is covered on one side of the depletion layer 400 far from p-type Si single crystalline substrate 200, and the n-type electrode 600 is covered on simultaneously The surface of SiO2 insulating layer 300 and highly doped n-type Si layer 500.

A kind of novel silicon base diode applied to photoelectrical coupler of the utility model is in p-type Si single crystalline substrate 200 One end face is additionally arranged depletion layer 400, then successively covers setting highly doped n-type Si layer 500 and n in the other end of depletion layer 400 Type electrode 600 is not corrupted to the perfection of lattice of p-type Si single crystalline substrate 200, is different from the different zones in the past in substrate P-type and n-type doping are directly carried out, 200 perfection of lattice of p-type Si single crystalline substrate is remained, improves crystal quality, mention significantly The high performance of silicon-based diode.

Further, the depletion layer 400 is amorphous Al2O3 depletion layer.

Further, the depletion layer 400 is amorphous Si depletion layer.

Further, the depletion layer 400 with a thickness of 1-5nm.

Further, the highly doped n-type Si layer 500 is that Al adulterates N-shaped Si layers.

Further, the highly doped n-type Si layer 500 with a thickness of 300-1200nm.

Further, the n-type electrode 600 is N-shaped Al electrode.N-shaped Si layers of phase is adulterated using N-shaped Al electrode and Al Match, adulterates preparation n-type semiconductor using Al, be conducive to the performance for being bonded and improving n-electrode with n-type electrode 600Al.

Further, the n-type electrode 600 with a thickness of 200-450nm.

The above, the only preferred embodiment of the utility model, the utility model are not limited to above-mentioned implementation Mode, as long as its technical effect for reaching the utility model with identical means, all should belong to the protection scope of the utility model.

Claims

1. a kind of novel silicon base diode applied to photoelectrical coupler, it is characterised in that: including p-type electrode (100), p-type Si Single crystalline substrate (200), depletion layer (400), Si layers of highly doped n-type (500), SiO2 insulating layer (300) and n-type electrode (600), institute The end face for stating p-type Si single crystalline substrate (200) is provided with the p-type electrode (100), and other end is provided with described exhaust Layer (400) and SiO2 insulating layer (300), the SiO2 insulating layer (300) are still around setting in the surrounding of depletion layer (400), institute State Si layers of highly doped n-type (500) one sides for being covered on the depletion layer (400) separate p-type Si single crystalline substrate (200), the N-shaped Electrode (600) is covered on the surface of SiO2 insulating layer (300) and highly doped n-type Si layers (500) simultaneously.

2. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 1, it is characterised in that: described Depletion layer (400) is amorphous Al2O3 depletion layer.

3. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 1, it is characterised in that: described Depletion layer (400) is amorphous Si depletion layer.

4. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 2 or 3, it is characterised in that: The depletion layer (400) with a thickness of 1-5nm.

5. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 1, it is characterised in that: described N-shaped Si layers is adulterated for Al for Si layers of highly doped n-type (500).

6. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 1, it is characterised in that: described Si layers of highly doped n-type (500) with a thickness of 300-1200nm.

7. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 5, it is characterised in that: described N-type electrode (600) is N-shaped Al electrode.

8. a kind of novel silicon base diode applied to photoelectrical coupler according to claim 1, it is characterised in that: described N-type electrode (600) with a thickness of 200-450nm.