CN208796983U - A kind of package structure of semiconductor device - Google Patents

A kind of package structure of semiconductor device Download PDF

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Publication number
CN208796983U
CN208796983U CN201821038994.6U CN201821038994U CN208796983U CN 208796983 U CN208796983 U CN 208796983U CN 201821038994 U CN201821038994 U CN 201821038994U CN 208796983 U CN208796983 U CN 208796983U
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China
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electrode sheet
semiconductor device
device chip
chip
elastic component
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CN201821038994.6U
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Inventor
李金元
崔磊
张璧君
吴鹏飞
金锐
潘艳
温家良
吴军民
田丽欣
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Global Energy Interconnection Research Institute
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Global Energy Interconnection Research Institute
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Abstract

The utility model provides a kind of package structure of semiconductor device, the package structure of semiconductor device, comprising: first electrode sheet;Second electrode sheet is oppositely arranged with the first electrode sheet;Semiconductor device chip is arranged between the first electrode sheet and second electrode sheet;And conductive elastic component, it is arranged between the semiconductor device chip and the first electrode sheet and/or between the semiconductor device chip and the second electrode sheet.The encapsulating structure between semiconductor device chip and electrode slice by being arranged conductive elastic component; it is buffered by the conductive elastic component and discharges the stress being applied on the power semiconductor chips when encapsulation; effective protection power semiconductor chips are not damaged because local pressure is excessive; the reliability for effectively improving device encapsulation, obtains good packages and devices performance.

Description

A kind of package structure of semiconductor device
Technical field
The utility model relates to semiconductor packages fields, and in particular to a kind of package structure of semiconductor device.
Background technique
In recent years, rigidity crimping is packaged into the predominant package mode for high-power semiconductor device chip, and rigidity crimps Encapsulation reduces metal molybdenum sheet and core by applying external force mainly by the front and the back side of the direct contact chip of upper and lower two metal molybdenum sheets Contact resistance between plate electrode piece.Rigidity crimping encapsulation includes between device surface area and package surface area with good The compact design that contacts well, device can be realized two-sided cooling and connect without lead, caused by can be avoided lead connection Heat fatigue and short circuit occurs the problem of cause desoldering to fail, when component failure, it is succinct convenient for series redundancy design, installation, it is parasitic The advantages that parameter is small.
Since semiconductor chip itself easily damages under mechanical force, meanwhile, the film in semiconductor processes Deformation occurs under stress will lead to electrology characteristic and change for material, such as under stress ruler occurs for a capacitor Very little variation will lead to capacitance and change, and therefore, when semiconductor chip packaging should avoid excessive stresses from being applied to core as far as possible On piece.Therefore, although rigidity crimping encapsulation has the above advantages, rigidity is crimped in encapsulation process to chip, electrode slice piece Equal materials requirement on machining accuracy is high, and rigid material inevitably introduces machining tolerance, the difference strained in encapsulation process It is different to will lead to stress distribution non-uniform phenomenon, so as to cause current unevenness, so that individual chip excessively collects because of current or voltage In and damage.
In addition, especially vertical-type power semiconductor device chip, encapsulation are tied for power semiconductor chips It is also to influence a key factor of the device performance and service life that whether structure, which has high heat-sinking capability,.
Summary of the invention
Technical problem to be solved in the utility model is sealed for above-mentioned power semiconductor chips in the prior art The phenomenon that rigid material machining tolerance bring power, electricity are unevenly distributed during dress and the not high phenomenon of heat-sinking capability, provide A kind of encapsulating structure of power semiconductor part, to improve package reliability.
In order to solve the above technical problems, the utility model provides a kind of package structure of semiconductor device, comprising:
First electrode sheet;Second electrode sheet is oppositely arranged with the first electrode sheet;Semiconductor device chip, setting exist Between the first electrode sheet and second electrode sheet;And conductive elastic component, it is arranged in the semiconductor device chip and institute It states between first electrode sheet and/or between the semiconductor device chip and the second electrode sheet.
Optionally, the conductive elastic component includes conducting liquid.
Optionally, the conductive elastic component further includes compliant conductive shell, and the conducting liquid is set to the flexibility In conductive shell.
It optionally, further include support member, the side wall of the semiconductor device chip is arranged in the support member, described Confined space and/or the support portion are formed between support member, the semiconductor device chip and the first electrode sheet Confined space is formed between part, the semiconductor device chip and the second electrode sheet, the conductive elastic component setting exists In the sealing space.
Optionally, side of the support member covering towards the outer surface of the first electrode sheet and/or second electrode sheet Edge point.
The encapsulating structure of power semiconductor part of the utility model, in semiconductor device chip and first electrode sheet and/or Conductive elastic component is set between second electrode sheet, buffered by the conductive elastic component and is applied to the function when discharging encapsulation Stress on rate semiconductor device chip, effective protection power semiconductor chips do not damage because local pressure is excessive, have Effect improves the reliability of device encapsulation, obtains good packages and devices performance.
Detailed description of the invention
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art Specific embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art Under the premise of labour, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the utility model embodiment package structure of semiconductor device cross-sectional view;
Fig. 2 is another embodiment of the utility model package structure of semiconductor device cross-sectional view;
Fig. 3 is another embodiment of the utility model package structure of semiconductor device cross-sectional view;
Fig. 4 is another embodiment of the utility model package structure of semiconductor device cross-sectional view.
Specific embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally Field those of ordinary skill every other embodiment obtained without making creative work belongs to practical Novel protected range.
It is in the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", " perpendicular Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.In addition, term " the One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other Not constituting conflict can be combined with each other.
The utility model embodiment provides a kind of package structure of semiconductor device, and Fig. 1 illustrates the embodiment semiconductor device Part encapsulating structure cross-sectional view, as shown in Figure 1, the package structure of semiconductor device includes first electrode sheet 1, electrically conductive elastic Component 2, power semiconductor chips 3 and second electrode sheet 4.
Wherein, the first electrode sheet and second electrode sheet are oppositely arranged, which is located at the first electrode Between piece and second electrode sheet, which can be vertical-type power semiconductor device chip, as IGBT, MOSFET, thyristor etc..
The conductive elastic component is set to as shown in Figure 1 between the semiconductor device chip and the second electrode sheet, this is led Electric elastomeric element includes conducting liquid, or is also possible to be wrapped in the intracorporal conducting liquid of compliant conductive shell.Specifically, this is led Electro-hydraulic body can be the common conducting liquid such as water, liquid metals, which can be located at the semiconductor device for disk Fluid pipe structure on part chip 3, the shell are contacted with the second electrode sheet.
Optionally, which can be a segment pipe structure, be also possible to multistage fluid line, the pipeline knot Structure can be the fluid line for bending to arbitrary shape, be also possible to linear type fluid line, carry out with specific reference to actual needs Selection.
The embodiment by will be coated with outside conducting liquid conductive material preparation shell, enhance the conducting liquid with Good electric connection between the first electrode sheet 1 and/or second electrode sheet 5 and the chip 3, improves the electrical property of device Energy.
When concrete application, seal member can also be set in the semiconductor device structure side, be not shown in the figure, the sealing The side of the coated upper/lower electrode of component, the semiconductor chip and the conductive elastic component, to the semiconductor device structure Play good seal protection.
The structure of the embodiment is led to by the way that conductive elastic component is arranged between semiconductor device chip and second electrode sheet It crosses the conductive elastic component and buffers and discharge the stress being applied on the semiconductor device chip when encapsulation, effective protection semiconductor Device chip is not damaged because local pressure is excessive, is effectively improved the reliability of device encapsulation, is obtained good packages and devices Performance;And conducting liquid is used to be uniformly distributed spy for rough interfaces power using conducting liquid as conductive elastic component Property, can buffer and discharge and be applied to the external carbuncle of first electrode on piece when encapsulation and answer the power semiconductor chips Power effect realizes that mechanics uniformly encapsulates;The heat generated when power semiconductor chip work simultaneously can be transmitted to the conduction Liquid has good heat spreading function to the power semiconductor chips;The encapsulating structure also has good self-protection function, Once liquid leakage, first electrode sheet is opened a way with chip automatically.
As the further embodiment of the embodiment, which can also be arranged in the semiconductor device chip Between the first electrode sheet.
Another embodiment of the utility model provides a kind of package structure of semiconductor device, as shown in Fig. 2, the semiconductor devices The difference of encapsulating structure and previous embodiment encapsulating structure is only that conductive elastic component setting is in the semiconductor chip and is somebody's turn to do Between first electrode sheet, the semiconductor chip and the second electrode sheet, i.e., in the semiconductor chip relative to first electrode and The two sides of two electrodes are provided with conductive elastic component.The structure of the embodiment is due to the power semiconductor chips and first It is provided with conducting liquid between electrode slice and second electrode sheet, can buffer and is applied to the power semiconductor when discharging encapsulation The stress of device chip upper and lower surface realizes that mechanics uniformly encapsulates, and improves package reliability, while the presence of conducting liquid, energy The enough heat generated to the semiconductor chip plays the role of good two-side radiation, which also has good self-shield function Can, once liquid leakage, first electrode sheet is opened a way with chip automatically.
Another embodiment of the utility model provides a kind of package structure of semiconductor device, as shown in figure 3, the structure with it is aforementioned The difference of the encapsulating structure of embodiment is, further includes support member 5, which is arranged in the semiconductor device chip 2 Side wall, form confined space between the support member 5, the semiconductor device chip and the second electrode sheet, the electrically conductive elastic Component 3 is arranged in the sealing space.Specifically, which may include insulating materials.
As shown in figure 3, the support member can be close to semiconductor chip side wall setting, and the height of the seal member is big In the height of the power semiconductor chips, which also covers outer surface of the chip towards the second electrode sheet Marginal portion.That is the terminal part of the upper surface of the semiconductor chip improves the chip to protect the semiconductor device chip Pressure resistance.The support member passes through the marginal portion realization pair of the side and upper surface that cover the power semiconductor chips Fixation, electrical isolation and the sealing function of the chip, while playing a supportive role between first electrode sheet and second electrode sheet.
Specifically, which, which also can choose, does not cover appearance of the semiconductor device chip towards second electrode sheet The marginal portion in face, but only it is close to semiconductor device chip side wall setting, the end of the upper surface of the semiconductor device chip End part realizes protection by the way that the material of O-shaped sealed insulation rubber etc is arranged in the semiconductor device chip upper surface, should Structure also can be improved the pressure resistance of the chip, protect terminal.Or electrically conductive elastic shell is wrapped in when the conductive elastic component When interior conducting liquid, since the conducting liquid is wrapped in the electrically conductive elastic shell, the support portion also can choose at this time Part does not cover the semiconductor device chip towards the marginal portion of the outer surface of second electrode sheet.
As the further embodiment of the embodiment, which can be with the semiconductor device chip, first electricity Confined space is formed between pole piece, which is arranged in the confined space.Specifically, which can cover Cover the outer edge part at the back side of the semiconductor chip, i.e. outer surface edge portion of the semiconductor chip relative to the first electrode Point, to play the role of protecting terminal.Due to chip the back side do not have conductive pattern, the chip towards this second electricity The marginal portion of the outer surface of pole piece also can choose to be covered without using seal member.
And cover marginal portion of the semiconductor chip towards the outer surface of second electrode sheet, as the embodiment into one Walk embodiment, as shown in figure 4, the support member can also simultaneously between the semiconductor device chip and the first electrode sheet, Two confined spaces are respectively formed between the semiconductor device chip and the second electrode sheet, in two confined spaces respectively It is provided with conductive elastic component.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or It changes among the protection scope created still in the utility model.

Claims (5)

1. a kind of package structure of semiconductor device characterized by comprising
First electrode sheet;
Second electrode sheet is oppositely arranged with the first electrode sheet;
Semiconductor device chip is arranged between the first electrode sheet and second electrode sheet;And
Conductive elastic component is arranged between the semiconductor device chip and the first electrode sheet and/or the semiconductor Between device chip and the second electrode sheet.
2. encapsulating structure according to claim 1, which is characterized in that the conductive elastic component includes conducting liquid.
3. encapsulating structure according to claim 2, which is characterized in that the conductive elastic component further includes compliant conductive shell Body, the conducting liquid are set in the compliant conductive shell.
4. encapsulating structure according to claim 1, which is characterized in that it further include support member, the support member setting In the side wall of the semiconductor device chip, the support member, the semiconductor device chip and the first electrode sheet it Between formed between confined space and/or the support member, the semiconductor device chip and the second electrode sheet formed it is close Space is closed, the conductive elastic component is arranged in the confined space.
5. encapsulating structure according to claim 4, which is characterized in that the support member is covered towards the first electrode The marginal portion of the outer surface of piece and/or second electrode sheet.
CN201821038994.6U 2018-06-29 2018-06-29 A kind of package structure of semiconductor device Active CN208796983U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821038994.6U CN208796983U (en) 2018-06-29 2018-06-29 A kind of package structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821038994.6U CN208796983U (en) 2018-06-29 2018-06-29 A kind of package structure of semiconductor device

Publications (1)

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CN208796983U true CN208796983U (en) 2019-04-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630649A (en) * 2018-06-29 2018-10-09 全球能源互联网研究院有限公司 A kind of package structure of semiconductor device and packaging method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630649A (en) * 2018-06-29 2018-10-09 全球能源互联网研究院有限公司 A kind of package structure of semiconductor device and packaging method

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