CN208706598U - Wafer thermal processing chamber - Google Patents
Wafer thermal processing chamber Download PDFInfo
- Publication number
- CN208706598U CN208706598U CN201821502339.1U CN201821502339U CN208706598U CN 208706598 U CN208706598 U CN 208706598U CN 201821502339 U CN201821502339 U CN 201821502339U CN 208706598 U CN208706598 U CN 208706598U
- Authority
- CN
- China
- Prior art keywords
- baffler
- objective table
- wafer
- shell
- measuring equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides a kind of wafer thermal processing chamber, belongs to technical field of semiconductors.The chamber includes shell；Objective table is disposed in the housing；Heating device is at least partially disposed in the shell, for heating to the object on the objective table；Temperature measuring equipment is at least partially disposed in the shell；Baffler is set between the objective table and the temperature measuring equipment.The utility model can reduce influence of the gas of wafer residual substance volatilization in heat treatment process for thermal processing chamber temperature-controlled precision, improve wafer thermal effectiveness.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of wafer thermal processing chambers.
Background technique
In semiconductor fabrication, heat treatment process be often used in wafer carry out internal crystal framework reparation, it is ion-activated with
And generate oxide layer, nitration case etc..In heat treatment process, usually wafer is placed in the chamber of Equipment for Heating Processing, control chamber
Temperature needed for room reaches technique makes inside wafer that expected variation occur.
In existing thermal processing chamber, majority is that temperature measuring equipment is arranged in hot processing chamber chamber interior, passes through temperature measuring equipment
The power of feedback regulation heating device, makes thermal processing chamber reach technological temperature.As it can be seen that the temperature-controlled precision of thermal processing chamber is very big
The precision dependent on temperature measuring equipment.However in the heat treatment process of semiconductor, since preliminary processes may cause wafer table
Face is there are residuals such as photoresist, ion implanted impurity objects, these residuals are evaporate into gaseous form in heat treatment
In chamber, corrosion may be generated to temperature measuring equipment, or form coating etc. outside temperature measuring equipment, influence the essence of temperature measuring equipment
Degree, and then the temperature-controlled precision of thermal processing chamber is influenced, cause wafer heat treatment process bad.
It should be noted that information is only used for reinforcing the background to the utility model disclosed in above-mentioned background technology part
Understanding, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Utility model content
The purpose of this utility model is to provide a kind of wafer thermal processing chambers, and then overcome at least to a certain extent existing
The lower problem of some wafer thermal processing chamber temperature-controlled precisions.
Other characteristics and advantages of the utility model will be apparent from by the following detailed description, or partially by this
The practice of utility model and acquistion.
One aspect according to the present utility model provides a kind of wafer thermal processing chamber, comprising: shell；Objective table is set to
In the shell；Heating device is at least partially disposed in the shell, for heating to the object on the objective table；Thermometric
Device is at least partially disposed in the shell；Baffler is set between the objective table and the temperature measuring equipment.
In a kind of exemplary embodiment of the utility model, the heating device includes infrared lamp, the objective table
For ring structure, the temperature measuring equipment includes pyrometer；The chamber further include: reflecting plate, set on the separate of the baffler
The side of the objective table, the pyrometer are embedded in the reflecting plate.
In a kind of exemplary embodiment of the utility model, the inner wall of the periphery of the baffler and the shell is pasted
It closes.
In a kind of exemplary embodiment of the utility model, the baffler is transparent obstructive plate.
In a kind of exemplary embodiment of the utility model, the distance between the objective table and the baffler are the
One height, the distance between the baffler and the reflecting plate are the second height, and first height is less than or equal to described
Second height.
In a kind of exemplary embodiment of the utility model, first height is 0.5~0.8mm, and described second is high
Degree be 0.8~1.0mm, the baffler with a thickness of 0.8~1.8mm.
In a kind of exemplary embodiment of the utility model, projection of the objective table in plane where the baffler
Within the edge of the baffler.
In a kind of exemplary embodiment of the utility model, the chamber further include: support rod is used to support the resistance
Partition, height of the baffler on the support rod is adjustable.
In a kind of exemplary embodiment of the utility model, the objective table is connected by shaft and the housing into rotation
It connects.
In a kind of exemplary embodiment of the utility model, the baffler passes through the shaft and the housing into rotation
Connection.
The exemplary embodiment of the utility model has the advantages that
By the baffler between setting objective table and temperature measuring equipment, on the one hand reduces wafer and volatilize during heat treatment
Residuals gas out is directly contacted with temperature measuring equipment, is reduced residuals gas and is made to the corrosion of temperature measuring equipment or coating
With to improve the precision of temperature measuring equipment and the temperature-controlled precision of thermal processing chamber；It on the other hand can be rectangular under wafer
At the accumulation of heat, the heated situation of wafer back part is improved, is uniformly heated wafer integrally, improves thermal effectiveness.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The utility model can be limited.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets the utility model
Embodiment, and be used to explain the principles of the present invention together with specification.It should be evident that the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 shows a kind of structural schematic diagram of wafer thermal processing chamber in the present exemplary embodiment；
Fig. 2 shows the structural schematic diagrams of wafer thermal processing chamber another in the present exemplary embodiment；
Fig. 3 shows a kind of structural schematic diagram for the thermal processing chamber for placing wafer in the present exemplary embodiment；
Fig. 4 shows the structural schematic diagram of another wafer thermal processing chamber in the present exemplary embodiment；
Fig. 5 shows the square resistance distribution map in each region of wafer under Different Heat Treatment Conditions.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, thesing embodiments are provided so that the utility model will
More fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described spy
Sign, structure or characteristic can be incorporated in any suitable manner in one or more embodiments.
The exemplary embodiment of the utility model provides firstly a kind of wafer thermal processing chamber, refering to what is shown in Fig. 1, the chamber
Room 100 may include shell 110, objective table 120, heating device 130, temperature measuring equipment 140 and barrier layer 150.Wherein, objective table
120 are set in shell 110, can be used for placing wafer；Heating device 130 is at least partially disposed in shell 110, for loading
Object (such as wafer) heating on platform 120；Temperature measuring equipment 140 is at least partially disposed in shell 110, is not connect with objective table 120
Touching, such as temperature measuring equipment 140 shown in Fig. 1 are set in the lower section of objective table 120, can also be set to top, the left side of objective table 120
Side, right side etc.；Baffler 150 is set between objective table 120 and temperature measuring equipment 140.
Wherein, being passed to and spreading out of for the ease of wafer, can be set opening, such as shell shown in Fig. 1 on shell 110
110 right side setting can slide up and down the door of switch, be also possible to upper opening or separable shell structure etc..
Objective table 120, which can be disk, annulus, gripper etc., can carry the shape of wafer, objective table 120 shown in Fig. 1
Further include the support rod of a bottom, and by support rod be connected to shell 110 or its outside, in other embodiments, objective table
120 can also be not provided with support rod, and be directly fixed on the side wall of shell 110, or pass through its other party such as the sunpender at top
Formula forms fixation, and the present embodiment is not limited to this.In addition, objective table can also include thimble for going up and down wafer locally,
The common device of wafer stage of the semiconductor equipments such as suction tray or the negative pressure stomata of wafer is adsorbed, the present embodiment is not limited to
This.
Heating device 130 can be set to any position, such as top, bottom, side wall etc. inside shell 110, can also be with
Heating device 130 is set at multiple positions of shell 110 simultaneously, any number of heating device 130 can be set in each position.
The heating elements such as heating wire, globar are generallyd use as heating device 130, heating temperature needed for specific visual technique and
It is fixed.
Temperature measuring equipment 140 can also be set to any position, such as top, bottom, side wall etc. inside shell 110, can be with
Temperature measuring equipment 140 is set at multiple positions of shell 110 simultaneously, any number of temperature measuring equipment 140 can be set in each position.
The temperature elements such as thermocouple, thermal resistance, pyrometer are generallyd use as temperature measuring equipment 140.
Baffler 150 can be set between objective table 120 and temperature measuring equipment 140, can connect to the support of objective table 120
Bar also can connect to other support rod, can also be fixed on the side wall of shell 110 etc..Fusing point is in heat treatment process
Heat-resisting material more than temperature can be used as the material of baffler 150.When the wafer on objective table 120 is in heat treatment process
In when volatilizing the gas of residuals, baffler 150 can stop gas to flow directly into temperature measuring equipment 140, to reduce gas
Body is directly contacted with temperature measuring equipment 140.
It in one exemplary embodiment, can be in multiple positions for the temperature of 110 inside each position of Accurate Determining shell
Temperature measuring equipment 140 is set, such as temperature measuring equipment 140 can be set on the top of objective table 120, lower section, left side, right side simultaneously,
Baffler 150 can be then set between the temperature measuring equipment 140 of objective table 120 and every side accordingly, such as can be set 4
Baffler.The present embodiment is not specifically limited the quantity of baffler.
In one exemplary embodiment, in order to preferably realize barriering effect, objective table 120 is put down where baffler 150
The projection in face can be located within the edge of baffler 150, such as when objective table 120 and baffler 150 are all horizontally disposed, loading
The floor projection of platform 120 is located within the edge of barrier layer 150, and in other words, the shape contour of barrier layer 150 is greater than objective table
120 shape contour.
It should be noted that illustrating only the structure inside shell 110 in Fig. 1, some devices in Fig. 1 may also include
Part outside shell 110, such as heating device 130 are located at the heating circuit outside shell 110, and temperature measuring equipment 140
Signal control loop outside shell 110, the outer extension part etc. of the support rod of objective table 120, in addition, on shell 110
Necessary ventilation opening, connection jaws etc. can also be set, although it is not shown in the diagrams, the thermal processing chamber comprising above-mentioned part should also be as
Belong to the protection scope of the utility model.
Based on above description, in the wafer thermal processing chamber of the present exemplary embodiment, pass through setting objective table and thermometric
On the one hand baffler between device reduces the residuals gas that volatilizes during heat treatment of wafer and temperature measuring equipment
Directly contact, reduce residuals gas and the corrosion of temperature measuring equipment or coating are acted on, so as to improve temperature measuring equipment precision with
And the temperature-controlled precision of thermal processing chamber；On the other hand, the accumulation that heat can be formed between barrier layer and objective table, to mention
The heated situation of high wafer back part, is uniformly heated wafer integrally, improves thermal effectiveness.
In heat treatment, rapid thermal treatment is a kind of more common technique.In an exemplary embodiment
In, thermal processing chamber can be the chamber of fast heat treatment device.Refering to what is shown in Fig. 2, the chamber 200 may include shell 210
And its objective table 220, the heating device 230, temperature measuring equipment 240, baffler 250, reflecting plate 260 of inside, wherein objective table
220 can be ring structure, and heating device 230 can be infrared lamp or infrared lamp pipe die group, temperature measuring equipment 240 can be height
Temperature meter, reflecting plate 260 can be set to the side of the separate objective table 220 of baffler 250, such as objective table 220 is set to resistance in Fig. 2
250 top of partition, then reflecting plate 260 can be set to the lower section of baffler 250, and pyrometer can be embedded in reflecting plate 260, i.e., high
The upper surface of temperature meter is flushed with the upper surface of reflecting plate 260.
In chamber 200 shown in Fig. 2, wafer is heated by the way of infra-red radiation, pyrometer receives wafer back
The infra-red radiation in portion is to realize thermometric, therefore objective table 220 can be the structure of middle part hollow out, so that the infrared spoke of wafer back part
Reflecting plate can be reached by penetrating.Other than ring structure, objective table 220 be also possible to three that are distributed in wafer outer rim or three with
On support chip, can also be reticular structure etc..Baffler 250 should also be as having preferable infrared penetrability and heat resistance,
Its material can be quartz, fluorite etc..
In existing fast heat treatment device, the residuals gas that wafer volatilizes during heat treatment is easy anti-
It penetrates and forms coating on plate, influence regular reflection of the infra-red radiation of wafer back part on reflecting plate, cause pyrometer accurate
The temperature of wafer is measured, and then causes thermal processing chamber can not accurate temperature controlling.Based on the thermal processing chamber in Fig. 2, barrier is added
To reduce residuals gas the coating on reflecting plate the case where the temperature measurement accuracy of pyrometer can be improved, accurately to measure in plate
The temperature in each region of wafer, and by the accurate temperature controlling of infrared heating device, so that the heated of each region of wafer is all reached work
Skill requirement, further to improve thermal effectiveness.
In one exemplary embodiment, the periphery of baffler 250 can be bonded with the inner wall of shell 210, as shown in Figure 2
Situation, then baffler 250 can be separated out the two sides space of chamber interior completely, to obstruct the residuals volatilization of wafer completely
The contact of gas and reflecting plate 260 or pyrometer, and since the infra-red radiation of wafer back part can pass completely through baffler 250
To reach reflecting plate 260 and pyrometer, therefore normal thermometric is not influenced；In other embodiments, the periphery of baffler 250
It can not be bonded with the inner wall of shell 210, certain space is reserved at edge, be conducive to the equalized temperature in chamber two sides space.
In one exemplary embodiment, baffler can be transparent obstructive plate, with the infrared spoke completely through wafer back part
It penetrates, and when residuals gas forms coating on transparent obstructive plate, can significantly be observed, in order to safeguard people
Member realizes and is cleaned in time.
Further, the material of transparent obstructive plate may include SiO2、Al2O3、ZrO2At least one of.Due to residual
Substance majority is photoresist, ion implanting residue etc., and the reactivity of above-mentioned three kinds of substances and residuals is lower, and fusing point
Higher than the general technology temperature of rapid thermal treatment, it is suitable for preparing transparent obstructive plate.
In one exemplary embodiment, the distance between objective table and baffler are the first height, baffler and reflecting plate
The distance between for second height, the first height can be less than or equal to second height.Specifically, the first height refers to loading
The length of gap in the axial direction between platform and baffler, the second height refer to the gap between baffler and reflecting plate in axial direction
On length, axial axis refers to the vertical axis of objective table.
When in Fig. 2 objective table 220 place wafer when, can with refering to what is shown in Fig. 3, wafer 270 lower surface (i.e. objective table
220 loading end) it with the distance between the upper surface of baffler 250 is the first height H1, the lower surface of baffler 250 and reflection
The distance between upper surface of plate 260 is the second height H2, H1≤H2.I.e. compared to reflecting plate 260, baffler 250 can be more
Close to wafer 270, during heat treatment, baffler 250 can accumulate more heat in the side close to wafer 270, no
It is deposited conducive to residuals gas on 250 surface of baffler or forms coating, to increase the service life of baffler 250.
Further, in fast heat treatment device, the distance between wafer lower surface and reflecting plate are usually grade,
Then the first height can be 0.5~0.8mm, and the second height can be 0.8~1.0mm, the thickness of baffler can for 0.8~
1.8mm.The baffler of the thickness is easily fabricated, and has preferably in terms of size with the chamber of most of fast heat treatment device
Suitability.
In one exemplary embodiment, chamber can also include support rod, be used to support baffler, baffler is in support rod
On height it is adjustable.Such as baffler can be threadedly attached on support rod, by turn baffler, it is adjustable its
Height on support rod；Or refering to what is shown in Fig. 3,6 elastic necks 280, elastic neck are set on the support rod of baffler 250
It can spring into support column when 280 stress, be popped up outward under normal condition, baffler 250 can be fixed on the multistage of support rod
In elastic neck 280, by switching elastic neck to adjust its height on support rod.
In other embodiments, baffler may be fixedly attached on support rod, and support rod is communicated to chamber from exterior thereto
Chamber interior, and adjustable support rod is in the extended height of chamber interior, to keep baffler adjustable in the indoor position of chamber.This
Outside, the utility model is not specifically limited the quantity of support rod.
It is adjustable in the indoor position of chamber by setting baffler, baffler can be adjusted at different conditions to different positions
It sets, such as when hangover on wafer surface matter is more in preliminary processes, can make it further from wafer with appropriate adjustment baffler, with
Reduction residuals gas can be with appropriate adjustment when heat treatment process temperature is lower in the possible deposition of baffler or coating
Baffler makes it closer to wafer, to reinforce the heat build-up of wafer back part, is conducive to the thermally equivalent etc. of wafer, to meet
Specific requirements in practical application.
In one exemplary embodiment, objective table can be connect by shaft with housing into rotation, such as refering to what is shown in Fig. 4,
220 center of objective table can connect support rod 290, and 290 bottom of support rod can be rotated by modes such as connection favourable turns, make loading
Platform 220 is with 290 rotation of support rod.During heat treatment, wafer can further be improved with objective table rotation with thermally equivalent
Thermal effectiveness.
Further, baffler can also be connect by shaft with housing into rotation, such as with reference to shown in above-mentioned Fig. 4, barrier
250 center of plate can connect support rod 290, with 290 rotation of support rod.Baffler rotation can increase residuals gas and exist
It obstructs plate surface deposition or forms the difficulty of coating, further increase the service life of baffler, and can further improve
The uniform heat distribution of wafer back part.
In addition, support rod is also possible to hollow structure, inside setting shaft, shaft connects objective table or baffler.In heat
In treatment process, support rod is remain stationary, and internal shaft rotation, band dynamic object stage or baffler rotation.
Certainly, in other embodiments, non-rotatable baffler also can be set, such as make baffler by that can not turn
Dynamic support rod is fixedly connected with the casing, or is fixed on baffler on the side wall of shell etc., to further simplify heat
The internal structure of processing chamber housing.
Fig. 5 shows the square resistance distribution map of test wafer different zones under Different Heat Treatment Conditions, and abscissa indicates
Each test point is to the distance of crystal circle center, and for the wafer of 300mm, test point is distributed in the range of -150~150mm, that is, covers
Whole Zhang Jingyuan is covered；75 points are tested in each region altogether in Fig. 5, and certain the present embodiment is not limited to this.Ordinate indicates each test
The square resistance of point, unit ohm/sq.Test process is illustrated below: three wafers are carried out to the preposition work of the same terms
Skill (such as photoetching, ion implanting)；First wafer is heat-treated (such as Equipment for Heating Processing A in initial thermal processing chamber
Including chamber B and cavity C, after just safeguarding to two chambers, first crystalline substance is heat-treated using any one chamber therein
Circle), the square resistance in each region is tested after heat treatment, obtains curve a；Chamber B maintains normative heat treatment chamber structure (not increase
Add barrier layer), after a period of time (such as continuous heat 300 opens wafer), to second crystalline substance in above-mentioned three wafers
Circle is heat-treated, and is tested the square resistance in each region after heat treatment, is obtained curve b；Cavity C is in the present embodiment plus to obstruct
The thermal processing chamber (practical to use thermal processing chamber shown in Fig. 2) of layer, using (continuous heat 300 is opened after the identical time
Wafer), the third Zhang Jingyuan in above-mentioned three wafers is heat-treated, the square resistance in each region is tested after heat treatment, is obtained
To curve c.
By curve a as it can be seen that the situation of initial thermal processing chamber is preferable, temperature-controlled precision is higher, therefore the side in each region of wafer
Block distribution of resistance is more uniform.By curve b as it can be seen that being heat-treated by normative heat treatment chamber after, the side in each region of wafer
Block resistance fluctuation increases, and the heat treatment degree consistency for illustrating that each region is subject to is poor, this is because temperature measuring equipment or reflecting plate
The more easily corrosion by crystal column surface volatilization gas or coating, the degree deteriorated using thermal processing chamber after same time compared with
Height, temperature-controlled precision are decreased obviously.By curve c as it can be seen that wafer is each after being heat-treated by the thermal processing chamber for increasing baffler
The square resistance in region still maintains preferable homogeneity, and the heat treatment degree for illustrating that each region is subject to is more consistent, this is
Since barrier layer reduces the contact of crystal column surface volatilization gas with temperature measuring equipment or reflecting plate, after using same time at heat
Reason chamber is able to maintain that preferable situation, and temperature-controlled precision is higher, causes thermal effectiveness preferable.
It is practical new to will readily occur to this after considering specification and practicing embodiment disclosed herein by those skilled in the art
The other embodiments of type.This application is intended to cover any variations, uses, or adaptations of the utility model, these changes
Type, purposes or adaptive change follow the general principle of the utility model, and including undocumented skill of the utility model
Common knowledge or conventional techniques in art field.The description and examples are only to be considered as illustrative, the utility model
True scope and spirit are pointed out by claim.
It should be understood that the utility model is not limited to the accurate knot for being described above and being shown in the accompanying drawings
Structure, and can carry out various modifications and change in the case where without departing from the scope.The scope of the utility model is only by appended
Claim limit.
Claims (10)
1. a kind of wafer thermal processing chamber characterized by comprising
Shell；
Objective table is disposed in the housing；
Heating device is at least partially disposed in the shell, for heating to the object on the objective table；
Temperature measuring equipment is at least partially disposed in the shell；
Baffler is set between the objective table and the temperature measuring equipment.
2. chamber according to claim 1, which is characterized in that the objective table is ring structure, the heating device packet
Infrared lamp is included, the temperature measuring equipment includes pyrometer；The chamber further include:
Reflecting plate, set on the side far from the objective table of the baffler, the pyrometer is embedded in the reflecting plate.
3. chamber according to claim 2, which is characterized in that the inner wall of the periphery of the baffler and the shell pastes
It closes.
4. chamber according to claim 2, which is characterized in that the baffler is transparent obstructive plate.
5. chamber according to claim 2, which is characterized in that the distance between the objective table and the baffler are the
One height, the distance between the baffler and the reflecting plate are the second height, and first height is less than or equal to described
Second height.
6. chamber according to claim 5, which is characterized in that first height is 0.5~0.8mm, and described second is high
Degree be 0.8~1.0mm, the baffler with a thickness of 0.8~1.8mm.
7. chamber according to claim 1, which is characterized in that projection of the objective table in plane where the baffler
Within the edge of the baffler.
8. chamber according to claim 1, which is characterized in that the chamber further include:
Support rod is used to support the baffler, and height of the baffler on the support rod is adjustable.
9. chamber according to claim 1, which is characterized in that the objective table is connected by shaft and the housing into rotation
It connects.
10. chamber according to claim 9, which is characterized in that the baffler is turned by the shaft and the shell
Dynamic connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821502339.1U CN208706598U (en) | 2018-09-12 | 2018-09-12 | Wafer thermal processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821502339.1U CN208706598U (en) | 2018-09-12 | 2018-09-12 | Wafer thermal processing chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208706598U true CN208706598U (en) | 2019-04-05 |
Family
ID=65946711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821502339.1U Active CN208706598U (en) | 2018-09-12 | 2018-09-12 | Wafer thermal processing chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208706598U (en) |
-
2018
- 2018-09-12 CN CN201821502339.1U patent/CN208706598U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7175283B2 (en) | Integrated substrate temperature measurement on high temperature ceramic heaters | |
| KR101624217B1 (en) | Apparatus including heating source reflective filter for pyrometry | |
| TW558752B (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
| WO2014143499A1 (en) | Susceptor support shaft with uniformity tuning lenses for epi process | |
| CN105453248A (en) | Support cylinder for thermal processing chamber | |
| TW201131681A (en) | Substrate processing apparatus having a radiant cavity | |
| CN109273378A (en) | The method for balancing wafer bow distribution | |
| TW200937561A (en) | Heat treatment apparatus, and method for controlling the same | |
| CN105723496B (en) | Substrate board treatment and substrate processing method using same | |
| JP2000339039A (en) | Method and device for controlling temperature of heating means and heat processor | |
| CN208706598U (en) | Wafer thermal processing chamber | |
| JPH03116828A (en) | Heat treatment device for semiconductor wafer | |
| TWI632355B (en) | Apparatus for use in a thermal processing chamber and system for processing a substrate | |
| JP4527449B2 (en) | Cylinder for heat treatment chamber | |
| JP2617064B2 (en) | Semiconductor wafer heating apparatus and method of manufacturing the same | |
| JP2007081348A (en) | Method for controlling temperature of thermal process, method of thermal process of substrate and device of thermal process of substrate | |
| TW421832B (en) | Method for adjusting the temperature distribution on the wafer surface in a thermal treatment | |
| TWI710002B (en) | Semiconductor fabrication tool and method for forming a layer on semicondcutor workpiece | |
| TW202036199A (en) | Temperature-controllable process chambers, electronic device processing systems, and manufacturing methods | |
| JP2000208524A (en) | Method for measuring temperature of semiconductor wafer for temperature monitor | |
| US7037733B2 (en) | Method for measuring temperature, annealing method and method for fabricating semiconductor device | |
| US5746591A (en) | Semiconductor furnace for reducing particulates in a quartz tube and boat | |
| JPH0546091B2 (en) | ||
| JPH05299428A (en) | Method and apparatus for heat-treatment of semiconductor wafer | |
| US11204312B2 (en) | In-situ full wafer metrology system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |