CN208689361U - Litho machine wafer carrier - Google Patents
Litho machine wafer carrier Download PDFInfo
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- CN208689361U CN208689361U CN201821174655.0U CN201821174655U CN208689361U CN 208689361 U CN208689361 U CN 208689361U CN 201821174655 U CN201821174655 U CN 201821174655U CN 208689361 U CN208689361 U CN 208689361U
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- holding tank
- particle holding
- pillar
- wafer carrier
- particle
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Abstract
The utility model relates to semiconductor integrated circuit manufacturing fields, and in particular to litho machine wafer carrier, including substrate carrier, the substrate carrier are placed in the chamber that can be vacuumized；Several pillars, several described pillars are sequentially arranged in the substrate carrier, and two pillars of arbitrary neighborhood are formed with an absorption gap；The upper surface of several pillars is in the same plane；The absorption gap by the wafer adsorption and can be positioned at the upper surface of the pillar in the chamber vacuum；The upper surface of the pillar is equipped with particle holding tank in center；The groove depth of the particle holding tank is less than the height of the pillar.It can effectively solve generates influence of the granule foreign to crystal column surface photolithographic exposure during photolithographic exposure on crystal column surface or pillar.
Description
Technical field
The utility model relates to semiconductor integrated circuit manufacturing fields, and in particular to a kind of litho machine wafer carrier.
Background technique
Photoetching (photo etching or lithography) is by a series of production stages, by crystal column surface film
Specific part remove technique.After this, crystal column surface can leave the film with micrographics structure.Pass through photoetching process
Process, what is finally retained on wafer is pattern image part.The basic principle is that: it utilizes photoresist (or photoresist)
Corrosion proof feature is formed after exposure because of photochemical reaction, the figure on mask plate is scribed to processed chip
(wafer) on surface.
In exposure process, since the size of exposure system single exposure is limited, needed in exposure
One wafer is divided into multiple exposing units (shot) and is exposed imaging respectively.Due to the straightline propagation principle of light, once
There is particle in crystal column surface, and particle will lead to pattern and defocus or overlay mistake.
In order to avoid causing pattern caused by exposure process to defocus or overlay mistake because of crystal column surface particle, the prior art is such as
A kind of device for cleaning back surface of wafer disclosed in Chinese patent CN203967038U is designed by structure to adsorbent equipment, into
When row backside of wafer is cleaned, the pollution particle of backside of wafer can be firmly adsorbed on adsorption tube, and can repeatedly be repeated
Ensure that the various sizes of pollution particle of backside of wafer is adsorbed.For another example a kind of detection mask plate of Chinese patent CN107831638A with
The method of mask stage contact surface pollution, comprising: S1: providing mask plate and wafer, the mask plate are placed in the exposure mask of litho machine
On platform with the wafer alignment；S2: the reference value of the alignment compensation parameter of mask plate is collected；S3: being repeated several times step S1 and S2,
To be collected into the reference value of multiple alignment compensation parameters, according to the setting pair of the reference value for the multiple alignment compensation parameters being collected into
The upper limit value and lower limit value of quasi- compensating parameter；S4: repeating step S1, the alignment compensation parameter value of this time alignment is collected, if institute
Alignment compensation parameter value is stated beyond its upper limit or lower limit, then litho machine stops working and cleans mask stage or mask plate；
If the alignment compensation parameter is on it between limit value and lower limit value, litho machine continues work.But main purpose
It is the case where can monitoring mask plate and mask stage contact surface in real time.
But above-mentioned technical proposal is unable to on-line checking or handles the pollution in exposure process to wafer, and due to wafer
Pollution cause exposing patterns mistake.
In prior art exposure process, the impurity of generation is concentrated mainly on the upper surface first is that pillar 3；Second is that wafer 1
Lower surface.As shown in figures 2-6, whether 3 upper surface of pillar or the lower surface of wafer 1, the presence meeting of impurity is so that on wafer 1
Surface is curved.And in order to clean these impurity, it is mainly polished using grinding stone, but it easily damages pillar 3, reduces pillar 3
Mechanical property.
Utility model content
The application provides litho machine wafer carrier, can effectively solve during photolithographic exposure in crystal column surface or branch
Influence of the granule foreign to crystal column surface photolithographic exposure is generated on column.
To realize the above-mentioned technical purpose, the technical solution that the utility model is taken is a kind of litho machine wafer carrier, packet
Include: substrate carrier, the substrate carrier is placed in the chamber that can be vacuumized, to carry wafer in a photolithographic process；
The upper surface of the substrate carrier is convexly equipped with several pillars, is formed between two pillars of arbitrary neighborhood
One absorption gap；The top surface of the pillar is in the same plane；The absorption gap is in the chamber vacuum
By wafer adsorption and the top surface of the pillar can be positioned at；The top surface of the pillar is equipped with particle holding tank in center；Institute
The groove depth for stating particle holding tank is less than or equal to height of projection of the pillar relative to the bottom in the absorption gap.
As the improved technical solution of the utility model, the bottom size of the particle holding tank is less than the absorption gap
Size.
As the improved technical solution of the utility model, the bottom size of the particle holding tank is accommodated between the particle
The 1/2-2/3 of the notch size of slot.
As the improved technical solution of the utility model, the particle holding tank be in inverted conical shape cave structure, described
The gap angle of the bottom of the cell wall and particle holding tank of grain holding tank is spent between 100 degree -130.
As the improved technical solution of the utility model, the notch size of the particle holding tank is between 0.1 millimeter -0.15
Millimeter, bottom size are between 0.05 millimeter -0.1 millimeter, groove depth between 0.06 millimeter -0.1 millimeter.
As the improved technical solution of the utility model, the V-shaped cave structure of particle holding tank, the particle is accommodated
The cell wall of slot is spent relative to the entity angle of the top surface of the pillar between 100 degree -130.
As the improved technical solution of the utility model, the groove depth of the particle holding tank is between the 1/ of the strut height
3-1/2。
As the improved technical solution of the utility model, the width dimensions of the particle holding tank notch are greater than the pillar
The width dimensions 1/2 of top surface and the width dimensions for being less than the pillar top surface.
As the improved technical solution of the utility model, the width dimensions of the particle holding tank notch are between the pillar
The width dimensions 60%~80% of top surface.
As the improved technical solution of the utility model, the attached absorption gap be it is interconnected, the absorption gap is enclosed
Around the particle holding tank and the alcove that is independently arranged the particle holding tank.
Beneficial effect
Using particle holding tank is opened up on the upper surface of pillar, what one can be vacuumized the application in the chamber
The impurity for being located at pillar upper surface is sucked particle holding tank, avoided because the particle on pillar upper surface is to photolithographic exposure by Cheng Zhong
Influence；Second is that the impurity positioned at wafer lower surface can be made to be caught in particle holding tank, caused by avoiding because of wafer lower surface particle
Photoetching caused by the injustice of wafer upper surface cannot focus well.
To sum up, the application can effectively solve the problem that influence of the impurity generated during photolithographic exposure to exposure focusing.
Detailed description of the invention
Fig. 1 is painted existing wafer carrier in normal condition to the absorption of wafer；
State of the wafer in existing wafer carrier when Fig. 2 is shown in normal condition；
Fig. 3 is painted state diagram when wafer lower surface is attached with particle in existing wafer carrier；
Fig. 4, which is painted photoetching aftereffect fruit when wafer lower surface is attached with particle in the prior art, to scheme；
Fig. 5 is painted particle in the location drawing of wafer lower surface；
Fig. 6 is painted the hookup of wafer lower surface and wafer carrier in the prior art in Fig. 5；
Fig. 7 is painted polish existing wafer carrier after generate defect schematic diagram；
Fig. 8 be painted prior art wafer carrier it is defective when to wafer adsorption procedure chart；
Fig. 9 is painted effect picture of Fig. 8 wafer after photoetching；
Figure 10 is painted the first improved wafer carrier structural schematic diagram of the application；
Figure 11 is painted wafer lower surface when having particle, and particle falls into the schematic diagram of particle holding tank；
The structural schematic diagram that Figure 12 is painted backside of wafer wafer is contacted with wafer carrier when having particle；
Figure 13 is painted branch intercolumniation schematic diagram in the application wafer carrier；
Figure 14 is painted improved second of wafer carrier structural schematic diagram of the application；
The schematic diagram of the particle holding tank of Figure 15 is painted wafer lower surface when having particle particle falls into V-type cave structure；
The structural schematic diagram that Figure 16 is painted backside of wafer wafer is contacted with second of wafer carrier when having particle；
In figure, 1, wafer；2, substrate carrier；3, pillar；4, gap is adsorbed；5, direction is vacuumized；6, notch；7, particle holds
Receive slot；8, particle；9, the particle holding tank of V-type cave structure.
Specific embodiment
To keep the purpose and technical solution of the utility model embodiment clearer, implement below in conjunction with the utility model
The attached drawing of example, is clearly and completely described the technical solution of the utility model embodiment.Obviously, described embodiment
It is a part of the embodiment of the utility model, instead of all the embodiments.Based on described the embodiments of the present invention,
Those of ordinary skill in the art's every other embodiment obtained under the premise of being not necessarily to creative work belongs to practical
Novel protected range.
Wafer 1 needs it to be fixed using wafer carrier in a photolithographic process, guarantees wafer 1 in a photolithographic process
Stability.
The wafer carrier of the prior art is as shown in Figs. 1-2, and wafer carrier includes substrate carrier 2 and is located at the substrate carrier
Several pillars 3 on 2；In fixed wafer 1, extracting vacuum direction 5 is the meeting pair of absorption gap 4 between the pillar 3 downwards
The wafer 1 is adsorbed, for realizing the alignment and exposure of the wafer 1；When normal sorption, the wafer 1 be with it is described
Wafer carrier plane contact, as shown in Figure 2.
But some 8 pollutants of solid particle can be generated in photoetching process, the wafer carrier upper surface of the prior art speckles with institute
When stating particle 8, the wafer 1 will become with the contact of the wafer carrier as shown in figure 3, the state in curved surface of the wafer 1 is solid
Due in the wafer carrier, after carrying out photoetching, obtained wafer 1 is as shown in figure 4, have lithographic hotspots, i.e., the described crystalline substance
Circle 1 generates photomask defect.The wafer carrier of the prior art is when 1 lower surface of wafer speckles with the particle 8, the crystalline substance
Circle 1 will become with the contact of the wafer carrier as shown in fig. 6, one end tilts, and corresponding particle 8 is in the wafer carrier
Position it is as shown in Figure 5.
When speckling with the particle 8 in the wafer carrier, the prior art is using grinding stone to the wafer carrier surface
Grinding cleaning is carried out, but since the two is all 8 object of solid particle, the wafer carrier is easy to produce notch 6 in polishing, such as schemes
Shown in 7.The wafer carrier be the wafer 1 is maintained at the function being exposed in the wafer carrier, if it by
Pollution (hot spot) between 1 back side of wafer and the wafer carrier.This local deformation that will lead to 1 surface of wafer causes to dissipate
Coke, and it can be superimposed (X/Y plane) or focus (Z plane) error, as shown in Figure 8.Under normal conditions, passed through using clean stone
Hot spot is manually or automatically removed, but high frequency cleaning may be damaged wafer carrier, and can also reduce table top service life and yield damage
It loses.
And when by the wafer carrier of the 1 vacuumizing and adsorbing band jagged 6 of wafer, the effect picture after photoetching is as schemed
Shown in 9.
In order to avoid the influence because of 8 object of solid particle generated in photoetching process to subsequent photoetching, the application is in existing crystalline substance
The wafer carrier is improved on the basis of circle microscope carrier.
Embodiment 1
As shown in Figure 10, the improved wafer carrier litho machine wafer carrier of the application, comprising:
Substrate carrier 2, the substrate carrier 2 are placed in the chamber that can be vacuumized；
As shown in figure 13, several pillars 3, several described pillars 3 are sequentially arranged in the substrate carrier 2, any phase
Two adjacent pillars 3 are formed with an absorption gap 4；The upper surface of several pillars 3 is in the same plane；Institute
Stating absorption gap 4 can adsorb the wafer 1 in the chamber vacuum and be positioned at the upper surface of the pillar 3；
The upper surface of the pillar 3 is equipped with particle holding tank 7 in center.As shown in figs. 10-12, the particle accommodates
Slot 7 is in rounding frustum cave structure.Particle drift in the particle holding tank 7 in order to prevent, causes photoetching to interfere, the suction
Attached gap be it is interconnected, the absorption gap is around the particle holding tank 7 and being independently arranged the particle holding tank
Alcove.
The angle of the bottom of the cell wall of the particle holding tank 7 and the particle holding tank 7 is spent between 100 degree -130；Institute
The groove depth for stating particle holding tank 7 is less than or equal to the height of the pillar 3, the groove depth of the preferably described particle holding tank 7 between
The 1/3-1/2 of 3 height of pillar；The size in the absorption gap of the particle holding tank 7 is greater than the 3 upper surface size of pillar
1/4 and be less than the 1/2 of the 3 upper surface size of pillar: the bottom size of the particle holding tank 7 is less than absorption gap
Size, specifically, 1/2- of the bottom size of the particle holding tank 7 between the notch size of the particle holding tank 7
2/3, the spacing between the pillar 3 of two of arbitrary neighborhood is 2.5 millimeters, and the width of the pillar 3 is 0.35 millimeter；Described
Width dimensions 60%~80% of the width dimensions of grain 7 notch of holding tank between 3 top surface of pillar, the specific particle appearance
Receive slot 7 notch size between 0.1 millimeter -0.15 millimeter, bottom size between 0.05 millimeter -0.1 millimeter, groove depth between 0.06
- 0.1 millimeter of millimeter.
In the wafer carrier or when the wafer lower surface speckles with 8 object of particle, 8 object of solid particle is (as schemed
Shown in 11) first is that can fall directly into the particle holding tank 7；Second is that due to air-flow and the wafer in vacuum
Extruding force between 1 and the wafer carrier slides into the particle holding tank 7.Described is speckled at the back side of the wafer 1
When 8 object of grain, 8 object of particle can be fallen directly into the particle holding tank 7；So that the wafer 1 is in the wafer carrier
It can remain horizontality, as shown in figure 12.
Embodiment 2
Improved second of wafer carrier litho machine wafer carrier of the application, comprising:
Substrate carrier 2, the substrate carrier 2 are placed in the chamber that can be vacuumized；
As shown in figure 13, several pillars 3, several described pillars 3 are sequentially arranged in the substrate carrier 2, any phase
Two adjacent pillars 3 are formed with an absorption gap 4；The upper surface of several pillars 3 is in the same plane；Institute
Stating absorption gap 4 can adsorb the wafer 1 in the chamber vacuum and be positioned at the upper surface of the pillar 3；
As illustrated in figures 14-16, the upper surface of the pillar 3 is equipped with particle holding tank 7 in center, and the particle accommodates
The V-shaped cave structure of slot 7, the reality of the cell wall of the particle holding tank 9 of the V-type cave structure relative to the top surface of the pillar 3
Body angle is spent between 100 degree -130.The groove depth of the particle holding tank 9 of the V-type cave structure between 3 height of pillar 1/
3-1/2.The width dimensions of 9 notch of particle holding tank of the V-type cave structure are greater than the width dimensions 1/ of 3 top surface of pillar
2 and be less than 3 top surface of pillar width dimensions；The width dimensions of 9 notch of particle holding tank of the V-type cave structure are situated between
Width dimensions 60%~80% in 3 top surface of pillar.The notch of the particle holding tank 9 of V-type cave structure in the present embodiment
Width is 150 microns, and groove depth is 75 microns.
Particle drift in the particle holding tank in order to prevent, causes photoetching to interfere, and the absorption gap is mutually to interconnect
Logical, the absorption gap surrounds the particle holding tank 9 of the V-type cave structure and is independently arranged the particle holding tank
Alcove.
In the wafer carrier or when the wafer lower surface speckles with 8 object of particle, 8 object of solid particle is (as schemed
Shown in 15) first is that can fall directly into the particle holding tank 9 of the V-type cave structure；Second is that due to gas in vacuum
Stream and the extruding force between the wafer 1 and the wafer carrier slide into the particle holding tank 9 of the V-type cave structure.
When the back side of the wafer 1 speckles with 8 object of particle, 8 object of particle can be fallen directly into the particle holding tank 7；Make
Horizontality can be remained in the wafer carrier by obtaining the wafer 1, as shown in figure 16.
The above is only the embodiments of the present invention, and the description thereof is more specific and detailed, but can not therefore understand
For a limitation on the scope of the patent of the present invention.It should be pointed out that for those of ordinary skill in the art, not taking off
Under the premise of from the utility model design, various modifications and improvements can be made, these belong to the protection of the utility model
Range.
Claims (10)
1. a kind of litho machine wafer carrier characterized by comprising substrate carrier, the substrate carrier are placed in and can vacuumize
In chamber, to carry wafer in a photolithographic process；
The upper surface of the substrate carrier is convexly equipped with several pillars, is formed with one between two pillars of arbitrary neighborhood
Adsorb gap；The top surface of the pillar is in the same plane；The absorption gap can incite somebody to action in the chamber vacuum
Wafer adsorption and the top surface for being positioned at the pillar；The top surface of the pillar is equipped with particle holding tank in center；Described
The groove depth of grain holding tank is less than or equal to height of projection of the pillar relative to the bottom in the absorption gap.
2. litho machine wafer carrier according to claim 1, which is characterized in that the bottom size of the particle holding tank is small
Size in the absorption gap.
3. litho machine wafer carrier according to claim 2, which is characterized in that the bottom size of the particle holding tank is situated between
In the 1/2-2/3 of the notch size of the particle holding tank.
4. litho machine wafer carrier according to claim 1, which is characterized in that the particle holding tank is recessed in inverted conical shape
The gap angle of the bottom of cave structure, the cell wall of the particle holding tank and the particle holding tank is spent between 100 degree -130.
5. litho machine wafer carrier according to claim 4, which is characterized in that the notch size of the particle holding tank is situated between
In 0.1 millimeter -0.15 millimeter, bottom size between 0.05 millimeter -0.1 millimeter, groove depth between 0.06 millimeter -0.1 millimeter.
6. litho machine wafer carrier according to claim 1, which is characterized in that the V-shaped depression knot of particle holding tank
The entity angle of structure, top surface of the cell wall of the particle holding tank relative to the pillar is spent between 100 degree -130.
7. litho machine wafer carrier according to claim 1, which is characterized in that the groove depth of the particle holding tank is between institute
State the 1/3-1/2 of strut height.
8. litho machine wafer carrier according to claim 1, which is characterized in that the broad-ruler of the particle holding tank notch
The very little width dimensions 1/2 greater than the pillar top surface and the width dimensions less than the pillar top surface.
9. litho machine wafer carrier according to claim 1, which is characterized in that the broad-ruler of the particle holding tank notch
The very little width dimensions 60%~80% between the pillar top surface.
10. -9 any litho machine wafer carrier according to claim 1, which is characterized in that the absorption gap is mutual
Connection, the alcove that the absorption gap surrounds the particle holding tank and is independently arranged the particle holding tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821174655.0U CN208689361U (en) | 2018-07-24 | 2018-07-24 | Litho machine wafer carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821174655.0U CN208689361U (en) | 2018-07-24 | 2018-07-24 | Litho machine wafer carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208689361U true CN208689361U (en) | 2019-04-02 |
Family
ID=65881918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821174655.0U Active CN208689361U (en) | 2018-07-24 | 2018-07-24 | Litho machine wafer carrier |
Country Status (1)
| Country | Link |
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| CN (1) | CN208689361U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
| CN112578637A (en) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | Method for improving pollution of bearing table and photoetching machine |
-
2018
- 2018-07-24 CN CN201821174655.0U patent/CN208689361U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
| CN112578637A (en) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | Method for improving pollution of bearing table and photoetching machine |
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