CN208507660U - Lead frame and semiconductor packing device - Google Patents
Lead frame and semiconductor packing device Download PDFInfo
- Publication number
- CN208507660U CN208507660U CN201820739683.6U CN201820739683U CN208507660U CN 208507660 U CN208507660 U CN 208507660U CN 201820739683 U CN201820739683 U CN 201820739683U CN 208507660 U CN208507660 U CN 208507660U
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- Prior art keywords
- chip
- weld part
- chip weld
- pin
- lead wire
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a kind of lead frame and semiconductor packing device, the lead frame includes an at least lead wire unit, the lead wire unit includes frame, the first chip weld part for carrying chip, the second chip weld part and pin, first chip weld part and the second chip weld part are oppositely arranged, and second the thickness of interconnecting piece of the chip weld part relative to the first chip weld part sinking predetermined altitude, the thickness of the second chip weld part and for connecting the second chip weld part and the pin thicken to 0.49~0.51mm.The semiconductor packing device includes the lead wire unit of above-mentioned lead frame.Since the thickness of the second chip weld part and interconnecting piece increases, so that the second chip weld part has more preferably stability, the second chip weld part can effectively be inhibited to shake.
Description
Technical field
The utility model relates to field of semiconductor package, in particular to a kind of lead frame and semiconductor packing device.
Background technique
With the progress of science and technology, more and more products such as washing machine, air-conditioning, compressor etc. require intelligence, from
And realize the purpose of Internet of Things " all things on earth interconnection ".Increasingly raising with people to product demand, is requiring intelligent product
Meanwhile also product being required to minimize, it is lightening.It correspondingly, is the miniaturization of realization product, lightening, these interiors of products
Components must integrated level with higher.Therefore, for control the power chip of these "smart" products also require compared with
High integrated level.To meet the needs of high integration, at present more semiconductor packing device other than being integrated with power chip,
It is also integrated with driving chip simultaneously.Therefore, usual for encapsulating each lead wire unit of the lead frame of the semiconductor packing device
Multiple chips are integrated with, correspondingly, each lead wire unit includes for the power chip weld part of load power chip and for holding
Carry the driving chip weld part of driving chip.Since power chip can generate biggish heat at work, power chip
Weld part can opposite driving chip weld part sink so that power chip weld part relative to driving chip weld part more close to
The plastic-sealed body lower surface formed after injection molding, to accelerate to radiate.But since power chip weld part and driving chip weld part are disconnected
(not the allowing to link together, the two is prevented to be connected) opened, power chip weld part is easy to produce shake, and power chip welds
The heavy rear and certain driving chip weld part interval height of subordinate causes to connect power chip and the bonding wire of driving chip is being molded
When be easy to happen fracture and damage.Simultaneously when carrying out bonding wire welding, shake, which occurs, for power chip weld part also will increase bonding wire
The difficulty of welding.Power chip weld part generates shake in order to prevent, generallys use dedicated removable thimble suppressing power core
Piece weld part, however such mode technique is more complex, and need to be suppressed using special equipment, increases production cost.
Utility model content
In order to when solving in the related technology in the presence of injection molding power chip weld part be easy to produce shake and tradition by removable
There is complex process, high production cost in the mode of dynamic thimble suppressing power chip weld part, the utility model provides
A kind of lead frame.
The utility model separately provides a kind of semiconductor packing device.
The utility model provides a kind of lead frame, including an at least lead wire unit, and the lead wire unit includes frame, uses
In the first chip weld part, the second chip weld part and the pin of carrying chip；
The first chip weld part and the second chip weld part are oppositely arranged, and the second chip weld part phase
For the first chip weld part sinking predetermined altitude, the second chip weld part and for connecting second chip
The thickness of the interconnecting piece of weld part and the pin is thickeied to 0.49~0.51mm.
Further, it is provided between the second chip weld part and the frame and reinforces the second chip weld part
The connecting line of stability.
Further, the predetermined altitude that the second chip weld part sinks is 0.19~0.21mm；
The thickness of the entire lead frame is thickeied to 0.49~0.51mm.
Further, the first chip weld part has multiple, and multiple first chip weld parts are along the lead wire unit
Width direction be alternatively arranged, the lead wire unit include one along the lead wire unit width direction extend lateral connection
Line, the transverse connecting line are connect with the chip on multiple first chip weld parts, with same to multiple chip inputs
The electric signal of sample, the transverse connecting line extend outward to form the external pin for connecting with external circuit.
Further, the lead wire unit is multiple, and the multiple lead wire unit is divided into two rows of multiple rows, the lead list of same row
Member is arranged along the length direction of the lead frame, and same row lead wire unit arranges in the width direction, and the one of the lead frame
The column longitudinal centre line and cross central line of column lead wire unit are crossed to form column central point, the lead wire unit phase of the two of same row
For the column central point central symmetry.
Further, the glue injection channel of two lead wire units of same row is located at the not ipsilateral of the column longitudinal centre line.
Further, multiple pipes are provided on the outside of the first chip weld part and the second chip weld part
Foot, each pin is electrically connected with neighbouring the first chip weld part or the second chip weld part or each pipe
Foot connects the chip on the first chip weld part or the second chip weld part by bonding wire, and the lead wire unit further includes using
In the heteropleural pin of connection heteropleural chip；
The heteropleural pin is located at the side where the second chip weld part, and the heteropleural pin is for passing through bonding wire
Electrical connection is located at the chip on the first chip weld part of the second chip weld part opposite side, and the heteropleural pin includes
Internal pin and external pin, the external pin exposed outside in plastic-sealed body after the lead frame plastic packaging, said inner tube foot position
Between the adjacent two second chip weld part.
Further, the first chip weld part is for welding driving chip, and the second chip weld part is for welding
Power chip.
The utility model separately provides a kind of semiconductor packing device, including plastic-sealed body, is encapsulated in that the plastic packaging is intracorporal to be drawn
Line unit and the chip being welded in the lead wire unit；
The lead wire unit includes the first chip weld part, the second chip weld part and multiple pipes for carrying chip
Foot, the chip on the first chip weld part are electrically connected with the chip on the second chip weld part, first chip
Weld part and the second chip weld part are oppositely arranged, and the second chip weld part is welded relative to first chip
Subordinate sinks predetermined altitude, the thickness of the second chip weld part and for connecting the second chip weld part and the pipe
The thickness of the interconnecting piece of foot is thickeied to 0.49~0.51mm.
Further, the thickness of the entire lead wire unit is thickeied to 0.49~0.51mm；
The predetermined altitude that the second chip weld part sinks is 0.19~0.21mm, on the first chip weld part
Chip on chip and the second chip weld part is electrically connected by bonding wire, and the bonding wire is continuous sealing wire, described partly to lead
The integral thickness of body packaging is 3.23~3.33mm.
Further, the first chip weld part has multiple, and multiple first chip weld parts are along the lead wire unit
Width direction be alternatively arranged, the lead wire unit include one along the lead wire unit width direction extend lateral connection
Line, the transverse connecting line are connect by bonding wire with the chip on multiple first chip weld parts, with to multiple cores
Piece inputs same electric signal, and the transverse connecting line extends outward to form the external pin for connecting with external circuit, institute
It states external pin and exposes the plastic-sealed body.
Further, multiple pipes are provided on the outside of the first chip weld part and the second chip weld part
Foot, each pin is electrically connected with neighbouring the first chip weld part or the second chip weld part or each pipe
Foot connects the chip on the first chip weld part or the second chip weld part by bonding wire, and the lead wire unit further includes using
In the heteropleural pin of connection heteropleural chip；
The heteropleural pin is located at the side where the second chip weld part, and the heteropleural pin is for passing through bonding wire
Electrical connection is located at the chip on the first chip weld part of the second chip weld part opposite side, and the heteropleural pin includes
Internal pin and external pin, the external pin is exposed outside plastic-sealed body, and said inner tube foot is located at the adjacent two second chip welding
Between portion.
Further, the outer surface of the plastic-sealed body is formed with the groove for increasing and climbing electric gap between adjacent two pin.
The technical solution that the embodiments of the present invention provide can include the following benefits:
The lead frame of the utility model includes an at least lead wire unit, which includes frame, for carrying core
The first chip weld part, the second chip weld part and the pin of piece, the first chip weld part and the second chip weld part are opposite to be set
It sets, and the second chip weld part is relative to the first chip weld part sinking predetermined altitude, the thickness of the second chip weld part
And the thickness of the interconnecting piece for connecting the second chip weld part and the pin is thickeied to 0.49~0.51mm.By
Increase that (thickness of the power chip weld part of conventional lead frame is general in the thickness of the second chip weld part and interconnecting piece
Less than 0.35mm) so that the second chip weld part has more preferably stability, the second chip weld part can effectively be inhibited to tremble
It is dynamic.
The semiconductor packing device of the utility model includes plastic-sealed body, is encapsulated in the intracorporal lead wire unit of plastic packaging and is welded on
Chip in lead wire unit.Being encapsulated in the intracorporal lead wire unit of plastic packaging includes for carrying the first chip weld part of chip, second
Chip weld part and multiple pins, the chip on the first chip weld part are electrically connected with the chip on the second chip weld part, and
One chip weld part and the second chip weld part are oppositely arranged, and the second chip weld part sinks relative to the first chip weld part
Predetermined altitude, the thickness of the second chip weld part and the interconnecting piece for connecting the second chip weld part and the pin
Thickness thicken to 0.49~0.51mm.Since the thickness of the second chip weld part and interconnecting piece thickens, so that second
Chip weld part has more preferably stability, effectively the second chip weld part is inhibited to shake.
It should be understood that the above general description and the following detailed description are merely exemplary, this can not be limited
Utility model.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets the utility model
Embodiment, and be used to explain the principles of the present invention together in specification.
Fig. 1 is the structural schematic diagram of the lead frame of the utility model.
Fig. 2 is the structural schematic diagram of two lead wire units positioned at same row.
Fig. 3 is the partial enlarged view of lead wire unit.
Fig. 4 is that chip is welded on the structural schematic diagram in lead wire unit.
Fig. 5 is the cross-sectional view that lead wire unit welds upper chip and bonding wire in one embodiment.
Fig. 6 is the cross-sectional view that lead wire unit welds upper chip and bonding wire in another embodiment.
Fig. 7 is the structural schematic diagram of semiconductor packing device.
Specific embodiment
Preferred implementation in order to further illustrate the principles of the present invention and structure, now in conjunction with attached drawing to the utility model
Example is described in detail.
As shown in Figure 1, its structural schematic diagram for the lead frame of the utility model, which can be by copper material
Material is made comprising multiple lead wire units 10, multiple lead wire unit 10 are arranged in two rows of multiple rows.Lead frame 100 in Fig. 1
Two rows 5 are arranged in including 10 lead wire units, 10,10 lead wire units 10 to arrange.The lead wire unit 10 of same row is along lead frame
100 length direction arrangement, same row lead wire unit 10 are arranged along the width direction of lead frame 100.Lead frame 100 1
The column longitudinal centre line L1 and cross central line L2 of column lead wire unit 10 are crossed to form column central point O, two lead lists of same row
Member 10 is relative to column central point O central symmetry, i.e. another lead wire unit 10 after the rotation of lead wire unit 10 180 degree with same row
It is overlapped.The glue injection channel of two lead wire units 10 ranks the two sides of longitudinal centre line L1 respectively.Specifically, as shown in Fig. 2, it is position
In the structural schematic diagram of two lead wire units of same row, dotted line route A with the arrow refers to a wherein lead wire unit 10
Glue injection channel, the glue injection channel of another lead wire unit 10 of the referred to same row of dotted line route B with the arrow, two glue injection channels
Positioned at the not ipsilateral of column longitudinal centre line L1, it is too long to avoid ipsilateral glue injection channel, bring technology difficulty, for example, injecting glue is logical
Road is too long, and the air of glue injection channel internal residual is difficult to remove；Glue injection channel is too long, and the injecting glue time is long, if solid in injected plastics material
Injecting glue cannot be completed before change, then is easy to cause plastic cement to be unevenly distributed, and injecting glue is of poor quality.Two glue injection channels are located in column longitudinal direction
Heart line L1's is not ipsilateral, can guarantee the uniformity and injection molding quality of injected plastics material.And two glue injection channels injecting glue can have simultaneously
Conducive to the efficiency for improving injecting glue.
It as shown in connection with fig. 3, is the partial enlarged view of lead wire unit.The lead wire unit 10 includes frame, for carrying core
The first chip weld part 11, the second chip weld part 12 and the pin 13 of piece.As shown in connection with fig. 4, Fig. 4 is that chip is welded on lead
Structural schematic diagram on unit, the first chip weld part 11 can be used for welding driving chip 101, and the second chip weld part 12 is used for
Bonding power chip 102.In addition to bonding power chip 102 on the second chip weld part 12, also solderable diode chip for backlight unit
103.It is appreciated that also can weld other chips on the second chip weld part 12 in the range of space allows.Similarly, exist
In the range of space allows, it also can weld other chips on the first chip weld part 11.
In one embodiment, which is used to encapsulate the semiconductor packages device of high power and high integration
Part, in conjunction with shown in Fig. 3 and Fig. 4, lead wire unit 10 includes multiple first chip weld parts 11 and multiple second chip weld parts 12,
To integrate more power chips 102 and driving chip 101.Width direction of multiple first chip weld parts 11 along lead wire unit
It is alternatively arranged.The lead wire unit 11 includes the transverse connecting line 151 extended along 11 width direction of lead wire unit, which connects
Wiring 151 is located at the first chip weld part 11 close to the side of pin 13, and transverse connecting line 151 can pass through bonding wire and multiple first
Driving chip 101 on chip weld part connects, to input same electric signal simultaneously to multiple driving chips 101, and should
Transverse connecting line 151 extends outward to form the external pin 152 for connecting with external circuit.Pass through an external pin as a result,
151 can reduce the quantity of external pin, and then improve lead frame 100 simultaneously to multiple 101 input signals of driving chip
Integrated level is conducive to the miniaturization of product.
In conjunction with shown in Fig. 3 and Fig. 4, the outside of the first chip weld part 11 and the second chip weld part 12 is distributed with multiple
Multiple pins 13 of pin 13, the same side are connected by even muscle 14.Each pin 13 and the first neighbouring chip weld part 11 or the
The connection of two chip weld parts 12 or each pin 13 pass through bonding wire 104 and the first chip weld part 11 or the second chip weld part
Chip electrical connection on 12.Lead wire unit 10 further includes for connecting the heteropleural pin 16 of heteropleural chip (see rectangle circle in Fig. 4
Part out).Heteropleural pin 16 is used to connect the chip on non-adjacent weld part, limited in view of the space of lead frame 100,
When the pin of 10 the same side of lead wire unit has been covered with, and opposite side is there is also in the case where space, breaking traditional layout type,
Heteropleural pin 16 is laid in the other side, favorably improves space utilization rate, keeps the layout of lead frame 100 more compact.
More specifically, heteropleural pin 16 is located at the side where the second chip weld part 12, and heteropleural pin 12 passes through weldering
Line electrical connection is located at the chip on the first chip weld part 11 of 12 opposite side of the second chip weld part.Heteropleural pin 16 includes inner tube
Foot 161 and external pin 162, the exposed outside in plastic-sealed body after 100 plastic packaging of lead frame of external pin 162 are used to connect external electrical
Road.Internal pin 161 is between adjacent two second chip weld part 12 and extends to concordant with 12 outer rim of the second chip weld part
And the region nearest from the first chip weld part 11, the welding difficulty welded at a distance is substantially reduced, tradition is only needed after improvement
Welding procedure can meet the requirement of its technique.Internal pin 161 passes through the driving chip 101 on bonding wire and the first chip weld part 11
Electrical connection.
As shown in connection with fig. 5, the cross-sectional view of upper chip and bonding wire, lead wire unit are welded for lead wire unit in one embodiment
The first chip weld part 11 and the second chip weld part 12 be respectively welded driving chip 101 and power chip 102, drive
It is connected between chip 101 and power chip 102 by bonding wire 106.12 phase of first chip weld part 11 and the second chip weld part
To setting, and the second chip weld part 12 is relative to 11 sinking predetermined altitude h1 of the first chip weld part, the second chip weld part
12 thickness is thickeied to 0.49~0.51mm.Interconnecting piece 19 is for connecting pin 13 and the second chip weld part 12.The interconnecting piece
19 and 12 uniform thickness of the second weld part, thickness is equally also 0.49~0.51mm.Compared to the power chip of conventional lead frame
The thickness of weld part and interconnecting piece, the second chip weld part 12 of the utility model and the thickness of interconnecting piece 19 at least increase
0.14mm, since the increase of thickness can effectively inhibit the second chip so that the second chip weld part 12 has more preferably stability
Weld part 12 is shaken, and the case where damaging or being broken occurs in the bonding wire 106 for reducing connection chip, while can also reduce bonding wire
The difficulty of welding.In addition, since the thickness of the second chip weld part 12 and interconnecting piece 19 increases, in injection molding, even if
Under the compressing of injected plastics material gravity, the second chip weld part 12 will not be pushed, and then can guarantee the second chip weld part 12
It is kept between plastic-sealed body lower surface at a distance from setting, guarantees the second chip weld part and extraneous insulation performance.
Further, since the thickness of the second chip weld part 12 and interconnecting piece 19 increases, 12 phase of the second chip weld part
The height sunk for the first chip weld part 11 can also suitably reduce, in one embodiment, the predetermined altitude of the sinking
H1 is 0.19~0.21mm.Since the height that the second chip weld part 12 sinks reduces, the first chip weld part 11 and second
Difference in height between chip weld part 12 decreases, correspondingly, for connecting chip on the first chip weld part 11 and the
The radian that the bonding wire 106 of chip on two chip weld parts 12 arches upward reduces, the semiconductor packages after advantageously reducing plastic packaging
The thickness of device, and guarantee that there is good switching performance between chip.If because of the first chip weld part and the second core
Difference in height between piece weld part is larger, then connect the welding of chip on the first chip weld part and the second chip weld part compared with
It is long, to ensure that bonding wire and chip edge have enough safe distances, it is necessary to be connected using the bonding wire of multiple nodes, lead to more piece
The radian that the bonding wire of point arches upward upwards is higher, and then causes the thickness of the semiconductor packing device after plastic packaging thicker；In addition, if weldering
The radian of line is excessively high, is easy to be injection molding the press-bending deformation of the factors such as the gravity of material or bonding wire itself in injection molding, leads to bonding wire
Other parts (not including the both ends of bonding wire) are contacted with chip, the performance of the entire semiconductor packing device after influencing plastic packaging.
Preferably, in one embodiment, (h refers to the semiconductor after plastic packaging to the thickness h of the semiconductor packing device after plastic packaging
The distance between upper surface and lower surface of packaging) it reduces to 3.23~3.33mm, relative to conventional semiconductor package device
The thickness of part at least reduces 0.6mm, keeps product more frivolous, is conducive to the miniaturization of product.
Further, as shown in Fig. 2, being provided with connecting line 17, the second chip between the second chip weld part 12 and frame 18
Weld part 12 further strengthens the steady of the second chip weld part 12 by the connection of connecting line 17 and the frame 18 of lead wire unit 10
It is qualitative, prevent the second chip weld part 12 from shaking.
In another embodiment, as shown in fig. 6, it is that lead wire unit welds upper chip and bonding wire in another embodiment
Cross-sectional view, the thickness of the total of lead wire unit 10 have all thickeied (the first chip weld part 11 and pin 13 thicken),
The thickness of i.e. entire lead frame 100 is all thickeied to 0.49~0.51mm of thickness of the second chip weld part, is so convenient for technique
Processing improves production efficiency.
After corresponding chip is welded on the corresponding weld part of lead frame 100, by bonding wire by chip and corresponding pin
Or after connecting line is attached, lead frame 100 is molded, Trim Molding is carried out after the completion of injection molding, forms an independence
Semiconductor packing device, as shown in Figure 7.
Specifically, the semiconductor packing device 20 includes plastic-sealed body 21, is encapsulated in plastic-sealed body 21 in conjunction with shown in Fig. 7 and Fig. 5
Interior lead wire unit and it is welded on chip in lead wire unit.Wherein, the lead wire unit being encapsulated in plastic-sealed body 21 is above-mentioned lead
Lead wire unit of the lead wire unit 10 of frame 100 after Trim Molding.
Therefore, correspondingly, the lead wire unit being encapsulated in plastic-sealed body 21 includes welding for carrying the first chip of chip
Portion, the second chip weld part and multiple pins.Chip electricity on chip and the second chip weld part on first chip weld part
Connection, the first chip weld part and the second chip weld part are oppositely arranged, and the second chip weld part is welded relative to the first chip
Socket part sinking predetermined altitude, the thickness of the second chip weld part and the thickness for connecting the second chip weld part and pin add
Thickness is to 0.49~0.51mm.Since the thickness of the second chip weld part and interconnecting piece thickens relative to conventional semiconductor package device
, so that the second chip weld part has more preferably stability, effectively the second chip weld part is inhibited to shake, and then reduce
The difficulty of welding bonding wire.In addition, can guarantee the second chip since the thickness of the second chip weld part and interconnecting piece increases
Weld part is kept between plastic-sealed body lower surface at a distance from setting, guarantees the second chip weld part and extraneous insulation performance.
Further, since the thickness of the second chip weld part and interconnecting piece increases, the second chip weld part is relative to
The height that one chip weld part sinks can also suitably reduce, and in one embodiment, the predetermined altitude h1 of the sinking is 0.19
~0.21mm.Since the height that the second chip weld part sinks reduces, the first chip weld part and the second chip weld part it
Between difference in height decrease, therefore, connect the chip on the first chip weld part and chip on the second chip weld part
Continuous sealing wire can be used in bonding wire, which does not contain node, and the radian that bonding wire 106 arches upward upwards as a result, reduces, has
Conducive to the thickness for reducing the semiconductor packing device after plastic packaging.Also, relative to traditional welding, wire length is decreased,
It can guarantee that there is good switching performance between chip.
In one embodiment, the thickness of the semiconductor packing device is reduced to 3.23~3.33mm, is partly led relative to tradition
The thickness of body packaging at least reduces 0.6mm, keeps product more frivolous, is conducive to the miniaturization of product.
First chip weld part can be used for welding driving chip, and the second chip weld part can be used for bonding power chip.This
Outside, in addition to bonding power chip on the second chip weld part, also solderable diode chip for backlight unit.It is appreciated that allowing in space
In the range of, it also can weld other chips on the second chip weld part.Similarly, in the range of space allows, the first chip
Also other chips be can weld on weld part.
In conjunction with shown in Fig. 3 and Fig. 4, the first chip weld part has multiple, and multiple first chip weld parts are along lead wire unit
Width direction is alternatively arranged, and lead wire unit further includes the transverse connecting line extended along lead wire unit width direction, the transverse direction
Connecting line is connect by bonding wire with the chip on multiple first chip weld parts, to input same electric signal to multiple chips.
Transverse connecting line extends outward to form the external pin for connecting with external circuit, and the external pin is exposed outside plastic-sealed body.It is logical
The quantity of external pin can be reduced, and then improve semiconductor packages simultaneously to multiple driving chip input signals by crossing the external pin
The integrated level of device is conducive to the miniaturization of semiconductor packing device.
It is provided with multiple pins on the outside of first chip weld part and the second chip weld part, each pin and neighbouring the
One chip weld part or the second chip weld part electrical connection or each pin pass through bonding wire the first chip weld part of connection or the
Chip on two chip weld parts.
Lead wire unit further includes the heteropleural pin for connecting heteropleural chip.The heteropleural pin is located at the second chip weld part
The side at place, heteropleural pin are located at the core on the first chip weld part of the second chip weld part opposite side by bonding wire electrical connection
Piece.Heteropleural pin includes internal pin and external pin, and external pin is exposed outside plastic-sealed body, and internal pin is located at the weldering of adjacent two second chip
Between socket part.Heteropleural pin is used to connect the chip on non-adjacent weld part, limited in view of the space of lead wire unit, works as lead
The pin of unit the same side has been covered with, and opposite side is favorably improved there is also traditional layout type in the case where space, is broken
Space utilization rate.In addition, the internal pin of heteropleural pin between adjacent two second chip weld part and is extended to and second
Chip weld part outer rim is concordant and the region nearest from the first chip weld part, substantially reduces the welding difficulty welded at a distance,
Only need conventional bonding technique that can meet the requirement of its technique after improvement.Further, the outer surface of plastic-sealed body is in adjacent two pin
Between be formed with to increase and climb the groove 22 in electric gap so that the creepage distance of adjacent two pin increases to 2.7mm, reduce short-circuit wind
Danger.
In another embodiment, other than the second chip weld part is thickeied to 0.49~0.51mm, lead wire unit other
Part can also thicken.That is, process and manufacture for the ease of technique, the thickness of entire lead wire unit (including the first chip weld part
With each pin) it thickeies to 0.49~0.51mm.
The above is only the preferable possible embodiments of the utility model, not limit the protection scope of the utility model, all fortune
The variation of the equivalent structure made by the utility model specification and accompanying drawing content, is all contained in the protection scope of the utility model
It is interior.
Claims (13)
1. a kind of lead frame, which is characterized in that including an at least lead wire unit, the lead wire unit includes frame, for holding
Carry the first chip weld part, the second chip weld part and the pin of chip；
The first chip weld part and the second chip weld part are oppositely arranged, and the second chip weld part relative to
The first chip weld part sinking predetermined altitude, the thickness of the second chip weld part and for connecting second core
The thickness of the interconnecting piece of piece weld part and the pin is thickeied to 0.49~0.51mm.
2. lead frame according to claim 1, which is characterized in that between the second chip weld part and the frame
It is provided with the connecting line for reinforcing the stability of the second chip weld part.
3. lead frame according to claim 1 or 2, which is characterized in that the second chip weld part sinks predetermined
Height is 0.19~0.21mm；
The thickness of the entire lead frame is thickeied to 0.49~0.51mm.
4. lead frame according to claim 1, which is characterized in that the first chip weld part has multiple, Duo Gesuo
It states the first chip weld part to be alternatively arranged along the width direction of the lead wire unit, the lead wire unit includes one and draws along described
Chip on the transverse connecting line that line cell width direction extends, the transverse connecting line and multiple first chip weld parts
Connection, to input same electric signal to multiple chips, the transverse connecting line extended outward to form for outside
The external pin of circuit connection.
5. lead frame according to claim 1, which is characterized in that the lead wire unit is multiple, the multiple lead
Unit is divided into two rows of multiple rows, and the lead wire unit of same row is arranged along the length direction of the lead frame, same row lead wire unit
It arranges in the width direction, the column longitudinal centre line and cross central line of a column lead wire unit of the lead frame are crossed to form column
Central point, the lead wire unit of the two of same row is relative to the column central point central symmetry.
6. lead frame according to claim 5, which is characterized in that the glue injection channel of two lead wire units of same row is located at
The column longitudinal centre line it is not ipsilateral.
7. lead frame according to claim 1 or 5, which is characterized in that the first chip weld part and described second
Multiple pins, each pin and neighbouring the first chip weld part or institute are provided on the outside of chip weld part
It states the electrical connection of the second chip weld part or each pin and the first chip weld part or second chip weldering is connected by bonding wire
Chip in socket part, the lead wire unit further include the heteropleural pin for connecting heteropleural chip；
The heteropleural pin is located at the side where the second chip weld part, and the heteropleural pin by bonding wire for being electrically connected
The chip on the first chip weld part of the second chip weld part opposite side is connect, the heteropleural pin includes inner tube
Foot and external pin, the external pin exposed outside in plastic-sealed body after the lead frame plastic packaging, said inner tube foot are located at phase
Between the adjacent two second chip weld parts.
8. lead frame according to claim 1, which is characterized in that the first chip weld part is for welding driving core
Piece, the second chip weld part are used for bonding power chip.
9. a kind of semiconductor packing device, which is characterized in that including plastic-sealed body, be encapsulated in the intracorporal lead wire unit of the plastic packaging and
The chip being welded in the lead wire unit；
The lead wire unit includes the first chip weld part, the second chip weld part and multiple pins for carrying chip, institute
The chip stated on the first chip weld part is electrically connected with the chip on the second chip weld part, the first chip weld part
It is oppositely arranged with the second chip weld part, and the second chip weld part sinks relative to the first chip weld part
Predetermined altitude, the thickness of the second chip weld part and the company for connecting the second chip weld part and the pin
The thickness of socket part is thickeied to 0.49~0.51mm.
10. semiconductor packing device according to claim 9, which is characterized in that the thickness of the entire lead wire unit adds
Thickness is to 0.49~0.51mm；
The predetermined altitude that the second chip weld part sinks is 0.19~0.21mm, the chip on the first chip weld part
It is electrically connected with the chip on the second chip weld part by bonding wire, the bonding wire is continuous sealing wire, the semiconductor package
The integral thickness for filling device is 3.23~3.33mm.
11. semiconductor packing device according to claim 9, which is characterized in that the first chip weld part have it is multiple,
Multiple first chip weld parts are alternatively arranged along the width direction of the lead wire unit, and the lead wire unit includes an edge
The transverse connecting line that the lead wire unit width direction extends, the transverse connecting line pass through bonding wire and multiple first chips
Chip connection on weld part, to input same electric signal to multiple chips, the transverse connecting line extends outwardly shape
At the external pin having for connecting with external circuit, the external pin exposes the plastic-sealed body.
12. semiconductor packing device according to claim 9, which is characterized in that the first chip weld part and described
Multiple pins, each pin and neighbouring the first chip weld part are provided on the outside of second chip weld part
Or the second chip weld part electrical connection or each pin connect the first chip weld part or second core by bonding wire
Chip on piece weld part, the lead wire unit further include the heteropleural pin for connecting heteropleural chip；
The heteropleural pin is located at the side where the second chip weld part, and the heteropleural pin by bonding wire for being electrically connected
The chip on the first chip weld part of the second chip weld part opposite side is connect, the heteropleural pin includes inner tube
Foot and external pin, the external pin is exposed outside plastic-sealed body, said inner tube foot be located at the adjacent two second chip weld part it
Between.
13. semiconductor packing device according to claim 9, which is characterized in that the outer surface of the plastic-sealed body is adjacent
The groove for increasing and climbing electric gap is formed between two pins.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820739683.6U CN208507660U (en) | 2018-05-17 | 2018-05-17 | Lead frame and semiconductor packing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820739683.6U CN208507660U (en) | 2018-05-17 | 2018-05-17 | Lead frame and semiconductor packing device |
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| CN208507660U true CN208507660U (en) | 2019-02-15 |
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| CN (1) | CN208507660U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493181A (en) * | 2018-05-17 | 2018-09-04 | 深圳赛意法微电子有限公司 | Lead frame and semiconductor packing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493181A (en) * | 2018-05-17 | 2018-09-04 | 深圳赛意法微电子有限公司 | Lead frame and semiconductor packing device |
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