CN208488191U - A kind of honeycomb structure pressure sensor - Google Patents
A kind of honeycomb structure pressure sensor Download PDFInfo
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- CN208488191U CN208488191U CN201820852141.XU CN201820852141U CN208488191U CN 208488191 U CN208488191 U CN 208488191U CN 201820852141 U CN201820852141 U CN 201820852141U CN 208488191 U CN208488191 U CN 208488191U
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Abstract
The utility model discloses a kind of honeycomb structure pressure sensors, it is characterised in that it includes the first film layer (1) being arranged successively, the first indium tin oxide layer (2), the first Ag nano wire layer (3), PDMS and/or elastomer silicone layer (4), the 2nd Ag nano wire layer (5), the second indium tin oxide layer (6), the second film layer (7)；Wherein, the above and below of the PDMS and/or elastomer silicone layer (4) is honeycomb structure, and Ag nano wire is distributed in the upper and lower surfaces of PDMS and/or elastomer silicone layer；The pressure sensor of the utility model has honeycomb micro-nano structure, has the characteristics that good stability, high sensitivity, anti-fold ability are strong, is conducive to the service life for improving pressure sensor.
Description
Technical field
The utility model belongs to pressure sensor, in particular to a kind of honeycomb structure pressure sensor.
Background technique
Pressure sensor (Pressure Transducer) is to experience pressure signal, and can incite somebody to action according to certain rule
Pressure signal is converted into the device or device of the electric signal of available output, medical treatment & health, smart home, environmental protection,
The fields such as safety in production, national defence play positive effect.
In recent years, with electronic information technology, the continuous development of material technology, intelligent wearable device is rapidly growing and obtains
Great raising has been arrived, while facilitating people to live, has also opened new field for the development of information technology.It can be used for curing
The wearable pressure sensor for treating health field gets more and more people's extensive concerning.Wearable pressure sensor requirement softness,
Light, comfortable, organic film such as PDMS, PET etc. meet above-mentioned requirements, however, these organic films are usually nonconducting, because
This can mix metal nanometer line, carbon nanotube, graphene etc. to obtain good electric property in PDMS.But this
The generally existing sensitivity of class pressure sensor is low to survey the problems such as range is small, is also receiving certain limitation using upper.In order to
Overcome the above problem, in the prior art, researcher also attempts to introduce various micro-structures, such as micro- knot of duplication silk in PDMS
Structure, the micro-structure of lotus leaf, nanoscale inverted pyramid structure, nano-pillar, the long strip array of nanometer etc., and these micro-structures exist
Defect such as replicates micro-structure, the micro-structure of lotus leaf of silk, and since micro-structure is excessively coarse, homogeneity is poor, and device sensitivity is also
It needs to further increase.The long strip array of nanoscale inverted pyramid structure, nano-pillar, nanometer, anti fluting are poor.
To sum up, need to develop a kind of wearable pressure sensor with excellent sensitivity and resistance to fold performance, with suitable
Answer the needs in market.
Utility model content
In view of the problems of the existing technology, the utility model provides a kind of honeycomb structure pressure sensor.
To achieve the goals above, the utility model uses following technical scheme:
A kind of honeycomb structure pressure sensor, including the first film layer 1, the first indium tin oxide layer 2, being arranged successively
One Ag nano wire layer 3, PDMS and/or elastomer silicone layer 4, the 2nd Ag nano wire layer 5, the second indium tin oxide layer 6, second
Film layer 7；Wherein, the above and below of the PDMS and/or elastomer silicone layer 4 is honeycomb structure, and Ag nano wire is distributed in
The upper and lower surfaces of PDMS and/or elastomer silicone layer.The upper surface of the PDMS and/or elastomer silicone layer 4
The position of shrinkage pool in honeycomb structure and the shrinkage pool in following honeycomb structure can be in symmetrical above and below, be also possible to phase
Mutually it is staggered, preferably the shrinkage pool in honeycomb structure above is offset from each other with the shrinkage pool in following honeycomb structure,
Under the action of pressure, it is more advantageous to the deformation of honeycomb structure, and then the sensitivity of raising pressure sensor and anti-fold
Property.
Preferably, a length of 400- of top sides of the shrinkage pool on the above and below of the PDMS and/or elastomer silicone layer 4
2500nm, a length of 200-1000nm of bottom sides；Top line width 5-80nm, bottom line width 30-500nm.Wherein, the top of the shrinkage pool
Portion is each meant close to the side of ITO layer.
Preferably, the height of the shrinkage pool on the above and below of the PDMS and/or elastomer silicone layer 4 is 1-20 μm.Institute
The height for stating the shrinkage pool on the above and below of PDMS and/or elastomer silicone layer refers to the top to the bottom of shrinkage pool of shrinkage pool
Distance.Preferably, between the bottom of 2 shrinkage pools opposite on the above and below of the PDMS and/or elastomer silicone layer away from
From being 40-200 μm.
Preferably, the PDMS and/or elastomer silicone layer with a thickness of 42-240 μm.The PDMS and/or organic
The thickness of layer of silicon elastomer refers to the top of 2 shrinkage pools opposite on the above and below of the PDMS and/or elastomer silicone layer
The distance between.
Preferably, the first film layer 1 and the second film layer 7 are PET, PI, PU, PEN or PC.
Preferably, the first film layer 1 and the second film layer 7 with a thickness of 200-700 μm.The first film layer 1
It may be the same or different with the thickness of the second film layer 7；It is preferred that the thickness phase of the first film layer 1 and the second film layer 7
Together.
Preferably, the thickness of first indium tin oxide layer 2 and the second indium tin oxide layer 6 is respectively 80-200nm.Wherein,
First indium tin oxide layer 2 and the second indium tin oxide layer 6 are to be plated on the first film layer 1 and the second film layer 7 respectively.Institute
The thickness for stating the first indium tin oxide layer 2 and the second indium tin oxide layer 6 may be the same or different；It is preferred that the first indium oxide
Tin layers 2 are identical as the thickness of the second indium tin oxide layer 6.
Preferably, the thickness of the first Ag nano wire layer 3 and the 2nd Ag nano wire layer 5 is respectively 50-900nm.It is described
The thickness of first Ag nano wire layer 3 and the 2nd Ag nano wire layer 5 may be the same or different；It is preferred that the first Ag nano wire layer 3
It is identical as the thickness of the 2nd Ag nano wire layer 5.
It is further preferred that the diameter of the Ag nano wire is 10-150nm.
Preferably, the pressure sensor includes the first extraction electrode 8 and the second extraction electrode 9.The extraction electrode is
Cu foil, they are separately fixed on the first indium tin oxide layer 2 and the second indium tin oxide layer 6, and connect with Ag nano wire.
The preparation method of above-mentioned honeycomb structure pressure sensor, comprising the following steps:
(1) mold is prepared, prism-frustum-shaped protrusion, a length of 200-1000nm of top sides, bottom are evenly distributed on the mold
Portion's side length is 400-2500nm；Top line width is 30-500nm, and bottom line width is 5-80nm；
(2) Ag nano wire is uniformly coated on mold；
(3) PDMS and/or elastomer silicone are uniformly coated on the mold by step (2) processing, wherein make described
PDMS and/or elastomer silicone fill up the pit on mold, and the upper surface of PDMS and/or elastomer silicone is to terrace with edge
The distance of the upper surface of shape protrusion is 20-100 μm, obtains crude product A；
(4) step (1)-(3) are repeated, crude product B is obtained；
(5) use mechanical stamping technology, by crude product A and crude product B PDMS and/or elastomer silicone connect
It closes；
(6) solidify, demoulding, obtain the above and below of Ag nano wire enhancing while there is the PDMS of honeycomb structure and/or have
Machine layer of silicon elastomer；
(7) film for being coated with tin indium oxide (ITO) is individually enclosed in the upper and lower of PDMS and/or elastomer silicone layer
On face；
(8) two electrodes are drawn on ITO respectively to get the honeycomb structure pressure sensor.
The electrode is Cu foil, they are separately fixed on the first indium tin oxide layer 2 and the second indium tin oxide layer 6, and with
The connection of Ag nano wire.
The utility model has the beneficial effects that
(1) pressure sensor of the utility model has honeycomb micro-nano structure, has good stability, high sensitivity, resists
The features such as fold ability is strong improves the service life of pressure sensor；
(2) Ag nano wire enters in micro-nano structure, once micro-nano structure deforms, can generate response rapidly, have
Conducive to the sensitivity for the response for improving device；
(3) pressure sensor of the utility model is at low cost, nontoxic and pollution-free, environmentally protective；Meanwhile preparation process letter
It is single, it is suitable for mass production, there is high market value；
(4) pressure sensor of the utility model is frivolous, soft, can be used for novel wearable device, has high city
Field value and industrialization potential.
Detailed description of the invention
Fig. 1 is the schematic cross-section of the honeycomb structure pressure sensor of the utility model；
Fig. 2 is the top view of PDMS and/or elastomer silicone layer.
Specific embodiment
The utility model is now illustrated with following embodiment, but is not intended to limit the scope of the present invention.In embodiment
The means used use the means of this field routine unless otherwise instructed.
Embodiment 1
A kind of honeycomb structure pressure sensor, including the first film layer 1, the first indium tin oxide layer 2, being arranged successively
One Ag nano wire layer 3, PDMS layer, the 2nd Ag nano wire layer 5, the second indium tin oxide layer 6, the second film layer 7, described first is thin
Film layer 1 is PET, and second film layer 7 is PET；Wherein, the above and below of the PDMS layer is honeycomb structure, and Ag nanometers
Line is respectively distributed in the upper and lower surfaces of PDMS layer.Shrinkage pool in the honeycomb structure of the upper surface of the PDMS layer is under
The position of shrinkage pool in the honeycomb structure in face is symmetrical, and shrinkage pool is a length of 1500nm of top sides, a length of 300nm of bottom sides；
Top line width is 30nm, and bottom line width is 100nm.The height of shrinkage pool is 10 μm.It is symmetrical on PDMS layers of the above and below
The distance between the bottom of 2 shrinkage pools be 120 μm.The PDMS layer with a thickness of 140 μm.The first film layer 1 and
The thickness of two film layers 7 is respectively 500 μm.The thickness of first indium tin oxide layer 2 and the second indium tin oxide layer 6 is respectively
150nm.The thickness of the first Ag nano wire layer 3 and the 2nd Ag nano wire layer 5 is respectively 400nm.Wherein, described, Ag nanometers
The diameter of line is 50nm.The pressure sensor includes first electrode 8 and second electrode 9.The electrode is Cu foil, they distinguish
It is fixed on the first indium tin oxide layer 2 and the second indium tin oxide layer 6, and connect with Ag nano wire.
The preparation method of above-mentioned honeycomb structure pressure sensor, comprising the following steps:
(1) mold is prepared, prism-frustum-shaped protrusion, a length of 300nm of top sides, bottom side length are evenly distributed on the mold
For 1500nm；Top line width is 100nm, and bottom line width is 30nm；
(2) Ag nano wire is uniformly coated on mold；
(3) PDMS is uniformly coated on the mold by step (2) processing, wherein fill up the PDMS on mold
Pit, and the distance of the upper surface of PDMS to the upper surface of prism-frustum-shaped protrusion is 60 μm, obtains crude product A；
(4) step (1)-(3) are repeated, crude product B is obtained；
(5) mechanical stamping technology is used, the PDMS on crude product A and crude product B is combined；
(6) solidify, demoulding, obtain the upper and lower faces of Ag nano wire enhancing while there is the PDMS layer of honeycomb structure；
(7) film for being coated with tin indium oxide (ITO) is individually enclosed on the above and below of PDMS layer；
(8) use Cu foil as extraction electrode to get the honeycomb structure pressure sensor.
Embodiment 2
Referring to Fig. 1, a kind of honeycomb structure pressure sensor, including the first film layer 1, the first indium oxide being arranged successively
Tin layers 2, the first Ag nano wire layer 3, PDMS layer, the 2nd Ag nano wire layer 5, the second indium tin oxide layer 6, the second film layer 7, institute
Stating the first film layer 1 is PET, and second film layer 7 is PET；Wherein, the above and below of the PDMS layer is honeycomb knot
Structure, Ag nano wire are respectively distributed in the upper and lower surfaces of PDMS layer.In the honeycomb structure of the upper surface of the PDMS layer
Shrinkage pool and the shrinkage pool in following honeycomb structure be staggeredly located out.Shrinkage pool on the above and below of the PDMS layer is
The a length of 1500nm of top sides, a length of 300nm of bottom sides；Top line width 30nm, bottom line width 100nm.The height of shrinkage pool is 10 μm.
The distance between symmetrical bottom of 2 shrinkage pools is 120 μm on the above and below of the PDMS layer.The thickness of the PDMS layer
It is 140 μm.The first film layer 1 and the thickness of the second film layer 7 are respectively 500 μm.First indium tin oxide layer, 2 He
The thickness of second indium tin oxide layer 6 is respectively 150nm.The thickness of the first Ag nano wire layer 3 and the 2nd Ag nano wire layer 5 point
It Wei not 400nm.Wherein, described, the diameter of Ag nano wire is 50nm.The pressure sensor includes drawing first electrode 8 and the
Two extraction electrodes 9.The extraction electrode is Cu foil, they are separately fixed at the first indium tin oxide layer 2 and the second indium tin oxide layer 6
On, and connect with Ag nano wire.
The preparation method of above-mentioned honeycomb structure pressure sensor, comprising the following steps:
(1) mold is prepared, prism-frustum-shaped protrusion, a length of 300nm of top sides, bottom side length are evenly distributed on the mold
For 1500nm；Top line width is 100nm, and bottom line width is 30nm；
(2) Ag nano wire is uniformly coated on mold；
(3) PDMS is uniformly coated on the mold by step (2) processing, wherein fill up the PDMS on mold
Pit, and the distance of the upper surface of PDMS to the upper surface of prism-frustum-shaped protrusion is 60 μm, obtains crude product A；
(4) step (1)-(3) are repeated, crude product B is obtained；
(5) mechanical stamping technology is used, the PDMS on crude product A and crude product B is combined；
(6) solidify, demoulding obtains on the above and below of Ag nano wire enhancing while having the PDMS layer of honeycomb structure；
(7) film for being coated with tin indium oxide (ITO) is individually enclosed on the above and below of PDMS layer；
(8) use Cu foil as extraction electrode to get the honeycomb structure pressure sensor.
The pressure sensor of impedance analyzer and Semiconductor Parameter Analyzer testing example 1 and embodiment 2 is used respectively,
Under identical active force (26KPa), the response of the pressure sensor of embodiment 1 and embodiment 2 is respectively 50 and 58.With reality
The pressure sensor for applying example 1 is compared, and the response of the pressure sensor of embodiment 2 improves 10-20%.In addition, embodiment 1
The response time of pressure sensor is 60ms, and the response time of embodiment 2 is 45ms.It follows that in pressure sensor
Shrinkage pool in the honeycomb structure of the upper surface of PDMS layer and being staggeredly located out for the shrinkage pool in following honeycomb structure (are such as implemented
Example 2) performance better than the shrinkage pool in the shrinkage pool and following honeycomb structure in the honeycomb structure of the upper surface of PDMS layer position
Symmetrical (such as embodiment 1).
Embodiment 3
A kind of honeycomb structure pressure sensor, including the first film layer 1, the first indium tin oxide layer 2, being arranged successively
One Ag nano wire layer 3, PDMS layer, the 2nd Ag nano wire layer 5, the second indium tin oxide layer 6, the second film layer 7, described first is thin
Film layer 1 is PET, and second film layer 7 is PET；Wherein, the above and below of the PDMS layer is honeycomb structure, and Ag nanometers
Line is respectively distributed in the upper and lower surfaces of PDMS layer.Shrinkage pool in the honeycomb structure of the upper surface of the PDMS layer is under
Shrinkage pool in the honeycomb structure in face is staggeredly located out, and the shrinkage pool on the above and below of the PDMS layer is that top sides are a length of
400nm, a length of 200nm of bottom sides；Top line width 5nm, bottom line width 30nm.The height of shrinkage pool is 1 μm.The PDMS layer
The distance between symmetrical bottom of 2 shrinkage pools is 40 μm on above and below.Described PDMS layers with a thickness of 42 μm.Described
The thickness of one film layer 1 and the second film layer 7 is respectively 200 μm.First indium tin oxide layer 2 and the second indium tin oxide layer 6
Thickness be respectively 80nm.The thickness of the first Ag nano wire layer 3 and the 2nd Ag nano wire layer 5 is respectively 50nm.Wherein, institute
It states, the diameter of Ag nano wire is 10nm.The pressure sensor includes the first extraction electrode 8 and the second extraction electrode 9.It is described to draw
Electrode is Cu foil out, they are separately fixed on the first indium tin oxide layer 2 and the second indium tin oxide layer 6, and is connected with Ag nano wire
It connects.
The preparation method of above-mentioned honeycomb structure pressure sensor, comprising the following steps:
(1) mold is prepared, prism-frustum-shaped protrusion, a length of 200nm of top sides, bottom side length are evenly distributed on the mold
For 400nm；Top line width is 30nm, and bottom line width is 5nm；
(2) Ag nano wire is uniformly coated on mold；
(3) PDMS is uniformly coated on the mold by step (2) processing, wherein fill up the PDMS on mold
Pit, and the distance of the upper surface of PDMS to the upper surface of prism-frustum-shaped protrusion is 20 μm, obtains crude product A；
(4) step (1)-(3) are repeated, crude product B is obtained；
(5) mechanical stamping technology is used, the PDMS on crude product A and crude product B is combined；
(6) solidify, demoulding obtains on the above and below of Ag nano wire enhancing while having the PDMS layer of honeycomb structure；
(7) film for being coated with tin indium oxide (ITO) is individually enclosed on the above and below of PDMS layer；
(8) use Cu foil as extraction electrode to get the honeycomb structure pressure sensor.
Embodiment 4
A kind of honeycomb structure pressure sensor, including the first film layer 1, the first indium tin oxide layer 2, being arranged successively
One Ag nano wire layer 3, PDMS layer, the 2nd Ag nano wire layer 5, the second indium tin oxide layer 6, the second film layer 7；Wherein, described
The above and below of PDMS layer is honeycomb structure, and Ag nano wire is respectively distributed in the upper and lower surfaces of PDMS layer.It is described
Shrinkage pool in the honeycomb structure of the upper surface of PDMS layer is staggeredly located out with the shrinkage pool in following honeycomb structure, described
Shrinkage pool on the above and below of PDMS layer is a length of 2500nm of top sides, a length of 1000nm of bottom sides；Top line width 80nm, bottom
Portion line width 500nm.The height of shrinkage pool is 20 μm.On the above and below of the PDMS layer between the bottom of 2 symmetrical shrinkage pools
Distance be 200 μm.The PDMS layer with a thickness of 240 μm.The first film layer 1 and the thickness of the second film layer 7 difference
It is 700 μm.The thickness of first indium tin oxide layer 2 and the second indium tin oxide layer 6 is respectively 200nm.Described first Ag nanometers
The thickness of line layer 3 and the 2nd Ag nano wire layer 5 is respectively 900nm.Wherein, described, the diameter of Ag nano wire is 10nm.It is described
Pressure sensor includes the first extraction electrode 8 and the second extraction electrode 9.The extraction electrode is Cu foil, they are separately fixed at
On first indium tin oxide layer 2 and the second indium tin oxide layer 6, and it is connect with Ag nano wire.
The preparation method of above-mentioned honeycomb structure pressure sensor, comprising the following steps:
(1) mold is prepared, prism-frustum-shaped protrusion, a length of 1000nm of top sides, bottom sides are evenly distributed on the mold
A length of 2500nm；Top line width is 500nm, and bottom line width is 80nm；
(2) Ag nano wire is uniformly coated on mold；
(3) PDMS is uniformly coated on the mold by step (2) processing, wherein fill up the PDMS on mold
Pit, and the distance of the upper surface of PDMS to the upper surface of prism-frustum-shaped protrusion is 100 μm, obtains crude product A；
(4) step (1)-(3) are repeated, crude product B is obtained；
(5) mechanical stamping technology is used, the PDMS on crude product A and crude product B is combined；
(6) solidify, demoulding, obtain the upper and lower faces of Ag nano wire enhancing while there is the PDMS layer of honeycomb structure；
(7) film for being coated with tin indium oxide (ITO) is individually enclosed on the above and below of PDMS layer；
(8) use Cu foil as extraction electrode to get the honeycomb structure pressure sensor.
Claims (9)
1. a kind of honeycomb structure pressure sensor, which is characterized in that including the first film layer (1), the first oxygen being arranged successively
Change indium tin layer (2), the first Ag nano wire layer (3), PDMS and/or elastomer silicone layer (4), the 2nd Ag nano wire layer (5), the
Indium dioxide tin layers (6), the second film layer (7)；Wherein, the above and below of the PDMS and/or elastomer silicone layer (4) is
Honeycomb structure, Ag nano wire are distributed in the upper and lower surfaces of PDMS and/or elastomer silicone layer (4).
2. honeycomb structure pressure sensor according to claim 1, which is characterized in that the PDMS and/or organosilicon
The a length of 400-2500nm of top sides of shrinkage pool on the above and below of elastomer layer (4), a length of 200-1000nm of bottom sides；Top
Line width is 5-80nm, and bottom line width is 30-500nm.
3. honeycomb structure pressure sensor according to claim 2, which is characterized in that the PDMS and/or organosilicon
The height of shrinkage pool on the above and below of elastomer layer (4) is 1-20 μm.
4. honeycomb structure pressure sensor according to claim 2 or 3, which is characterized in that the PDMS and/or organic
The distance between opposite bottom of 2 shrinkage pools is 40-200 μm on the above and below of layer of silicon elastomer (4).
5. honeycomb structure pressure sensor according to claim 1, which is characterized in that the first film layer (1) and
Second film layer (7) is PET, PI, PU, PEN or PC.
6. honeycomb structure pressure sensor according to claim 1, which is characterized in that the first film layer (1) and
Second film layer (7) with a thickness of 200-700 μm.
7. honeycomb structure pressure sensor according to claim 1, which is characterized in that first indium tin oxide layer
(2) and the second indium tin oxide layer (6) with a thickness of 80-200nm.
8. honeycomb structure pressure sensor according to claim 1, which is characterized in that the first Ag nano wire layer
(3) and the 2nd Ag nano wire layer (5) with a thickness of 50-900nm.
9. honeycomb structure pressure sensor according to claim 1 or 8, which is characterized in that the Ag nano wire it is straight
Diameter is 10-150nm.
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| CN201820852141.XU CN208488191U (en) | 2018-06-01 | 2018-06-01 | A kind of honeycomb structure pressure sensor |
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| CN201820852141.XU CN208488191U (en) | 2018-06-01 | 2018-06-01 | A kind of honeycomb structure pressure sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108955955A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of honeycomb structure pressure sensor and preparation method thereof |
| CN110608825A (en) * | 2019-09-12 | 2019-12-24 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| CN112378554A (en) * | 2020-10-26 | 2021-02-19 | 北京机械设备研究所 | Flexible pressure sensor with pressure sensitive structure |
| CN112834087A (en) * | 2021-01-06 | 2021-05-25 | 武汉大学 | Double-layer flexible pressure sensor and preparation method thereof |
| CN113008124A (en) * | 2021-02-20 | 2021-06-22 | 宁波诺丁汉新材料研究院有限公司 | Multi-mode sensor and preparation method thereof |
-
2018
- 2018-06-01 CN CN201820852141.XU patent/CN208488191U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108955955A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of honeycomb structure pressure sensor and preparation method thereof |
| CN110608825A (en) * | 2019-09-12 | 2019-12-24 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| CN110608825B (en) * | 2019-09-12 | 2021-08-20 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| CN112378554A (en) * | 2020-10-26 | 2021-02-19 | 北京机械设备研究所 | Flexible pressure sensor with pressure sensitive structure |
| CN112834087A (en) * | 2021-01-06 | 2021-05-25 | 武汉大学 | Double-layer flexible pressure sensor and preparation method thereof |
| CN112834087B (en) * | 2021-01-06 | 2022-02-01 | 武汉大学 | Double-layer flexible pressure sensor and preparation method thereof |
| CN113008124A (en) * | 2021-02-20 | 2021-06-22 | 宁波诺丁汉新材料研究院有限公司 | Multi-mode sensor and preparation method thereof |
| CN113008124B (en) * | 2021-02-20 | 2023-10-17 | 宁波诺丁汉新材料研究院有限公司 | Multimode sensor and preparation method thereof |
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