CN208367349U - DOE monitors integrating packaging module - Google Patents
DOE monitors integrating packaging module Download PDFInfo
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- CN208367349U CN208367349U CN201821088540.XU CN201821088540U CN208367349U CN 208367349 U CN208367349 U CN 208367349U CN 201821088540 U CN201821088540 U CN 201821088540U CN 208367349 U CN208367349 U CN 208367349U
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Abstract
The utility model discloses a kind of DOE to monitor integrating packaging module, including the first and second DOE substrate, wherein: being respectively equipped with the first and second metal electrode and the first and second ITO pattern on the first face of the first and second DOE substrate, wherein the first and second metal electrode is arranged at the two ends position of the first and second ITO pattern, and the first and second blank position is equipped in the first and second ITO pattern, expose the first and second DOE substrate at the first and second blank position, and etches the first and second micro-structure to form diffraction light at the first and second blank position；First face of the first and second DOE substrate is oppositely arranged and is bonded in respectively the two sides of the spacer of predetermined thickness, and the first and second metal electrode is connected by connection metal according to preset connection relationship.The utility model proposes DOE monitor integrating packaging module so that manufacturing process is greatly simplified, manufacturing cost is lower.
Description
Technical field
The utility model relates to diffraction optical devices more particularly to diffraction optical element DOE to monitor integrating packaging module.
Background technique
Camera and projector it is very extensive be applied to various electronic products in.For example, in common all kinds of intelligence
In the products such as energy mobile phone, plate and PC, camera has been almost indispensable device.And in recent years, it will be micro-
Type projector is likewise integrated in these electronic products, has become trend.
These projector bring functions can greatly enrich the experience of user, promote product competitiveness.For example, projection
Device can be used in 3D structure optical mode group, be projected out specific pattern, then cooperate receiver (such as camera) and specific algorithm,
May be implemented the accurate modeling to three-dimensional scenic, thus can be used to do gesture identification, body posture identification, three-dimensional scenic modeling and
Recognition of face.Especially 3D recognition of face, due to increasing one-dimensional information, is being experienced and is being pacified relative to the recognition of face of 2D
Full property etc. is that the latter is incomparable.Equally, relative to traditional bio-identification, such as fingerprint recognition, 3D recognition of face
Reliability and safety also want significantly superior.
Diffraction optical element (DOE) is had begun due to its special optical property and is widely used in various miniature throwings
In shadow device, DOE can make projector while projecting same effect pattern, can reduce the size of projector, reduce life
Cost is produced, this allows for being integrated in projector in the products such as widely used portable mobile termianl, such as smart phone, at
It is pratical and feasible.
In general, DOE is a kind of relative complex micro-nano passive optical device, it may be implemented to list under normal circumstances
The division of light beam, i.e. light beam can be split into several Shu Guang after passing through DOE, and DOE is substantially divided into two classes, and one kind is vibration
Width type, one kind are phase types, since amplitude type DOE can cause damages to luminous energy, and when the requirement of the microstructure size of DOE is very smart
It is not easy to manufacture when thin, therefore being currently being widely used is phase type DOE.Wherein phase type DOE again can be with by the arrangement of micro-structure
It is divided into preiodic type and stochastic pattern, wherein the micro-structure of periodic DOE has the arrangement of repeatability；And the DOE micro-structure of stochastic pattern
The no certain rule of arrangement.
No matter which kind of DOE, when its micro-structure destroyed or the surface DOE near physics or chemical environment change
When, diffraction when light beam passes through DOE is destroyed, and cause light beam that can not be separated into several beams according to preset mode, and make certain
The energy quantitative change of one outgoing beam is strong, and usually zero-order diffraction light becomes strong, so may cause in the application for the biology such as people
Injury, such as too strong light energy will lead to retinal burn.Therefore, being in many products for the monitoring of DOE state must
Indispensable, traditional monitor mode is to infer the state of DOE indirectly by simply monitoring DOE reflective light intensity, such as spread out
It penetrates when being destroyed, certain variation can occur for reflective light intensity, and the monitoring precision of this mode is lower；It is also exactly to pass through condenser type
Encapsulation come directly monitor DOE state, the DOE monitoring manufacturing process it is more complex, manufacturing cost height.
The disclosure of background above technology contents is only used for the design and technical solution that auxiliary understands the utility model, not
The prior art for necessarily belonging to present patent application shows above content in the applying date of present patent application in no tangible proof
In the case where having disclosed, above-mentioned background technique should not be taken to the novelty and creativeness of evaluation the application.
Utility model content
In order to solve the above-mentioned technical problem, the utility model proposes a kind of DOE (diffraction optical elements) to monitor integration packaging
The manufacturing process of module, the module is greatly simplified, and manufacturing cost is lower.
In order to achieve the above object, the utility model uses following technical scheme:
The utility model discloses a kind of DOE to monitor integrating packaging module, including the first DOE substrate and the 2nd DOE substrate,
Wherein: the first metal electrode and the first ITO (tin indium oxide) pattern are respectively equipped on the first face of the first DOE substrate,
Wherein first metal electrode is arranged at the two ends position of first ITO pattern, and in first ITO pattern
Equipped with the first blank position, the first DOE substrate is exposed at first blank position, and in first blank position
Place's etching forms the first micro-structure of diffraction light；The second metal electrode is respectively equipped on the first face of the 2nd DOE substrate
With the second ITO pattern, wherein second metal electrode is arranged at the two ends position of second ITO pattern, and in institute
It states and is equipped with the second blank position in the second ITO pattern, exposing the 2nd DOE substrate at second blank position, and
The second micro-structure to form diffraction light is etched at second blank position；First face of the first DOE substrate and described the
First face of two DOE substrates is oppositely arranged and is bonded in respectively the two sides of the spacer of predetermined thickness, and first metal
Electrode and second metal electrode are connected by connection metal according to preset connection relationship.
Preferably, wherein the first ITO pattern being equipped on the first face of the first DOE substrate is described by being plated in
It etches and is formed in the first ITO layer on first face of the first DOE substrate, is equipped on the first face of the 2nd DOE substrate
Second ITO pattern is formed by etching in the second ITO layer for being plated on the first face of the 2nd DOE substrate.
Preferably, first ITO pattern forms a first resistor, institute between first metal electrode of two ends
It states the second ITO pattern and forms a second resistance between second metal electrode of two ends.
Preferably, the first resistor and the second resistance be made of respectively single resistance or by it is multiple mutually simultaneously
The resistance of connection forms.
Preferably, preset connection relationship refer to by the corresponding first resistor of first ITO pattern with it is described
The corresponding second resistance of second ITO pattern carries out in series or in parallel.
Preferably, the spacer uses UV resinous material, with a thickness of 80~150 μm.
The invention also discloses a kind of DOE to monitor integrating packaging module, including the first DOE substrate and the 2nd DOE base
Bottom, in which: the first metal electrode and the first ITO pattern are respectively equipped on the first face of the first DOE substrate, wherein described
First metal electrode is arranged at the two ends position of first ITO pattern, in first metal electrode and described first
It is additionally provided with one layer of first etch layer on ITO pattern, the first micro-structure for diffraction light is equipped in first etch layer；?
It is respectively equipped with the second metal electrode and the second ITO pattern on first face of the 2nd DOE substrate, wherein second metal is electric
Pole is arranged at the two ends position of second ITO pattern, on second metal electrode and second ITO pattern also
Equipped with one layer of second etch layer, the second micro-structure for diffraction light is equipped in second etch layer；First etching
The surface of layer and the surface of second etch layer are oppositely arranged and the two sides of the spacer that is bonded in predetermined thickness respectively, and
First metal electrode and second metal electrode are connected by connection metal according to preset connection relationship.
Preferably, first etch layer and second etch layer are respectively silica, silicon oxynitride or resin
Class material；The spacer uses UV resinous material, with a thickness of 80~150 μm.
Preferably, first ITO pattern forms a first resistor, institute between first metal electrode of two ends
It states the second ITO pattern and forms a second resistance between second metal electrode of two ends；Wherein the first resistor and
The second resistance is made of single resistance respectively or is made of multiple resistance parallel with one another.
Preferably, preset connection relationship refer to by the corresponding first resistor of first ITO pattern with it is described
The corresponding second resistance of second ITO pattern carries out in series or in parallel.
Compared with prior art, the utility model has the beneficial effects that: the utility model proposes the integrated envelope of DOE monitoring
Die-filling piece, so that manufacturing process is greatly simplified, manufacturing cost is lower, and external interference resistance is strong；It is able to achieve simultaneously to DOE work
Direct monitoring when making the stringent protection of environment, and being abnormal to DOE improves production so that DOE is relatively reliable, safety
Product competitiveness.
Detailed description of the invention
Fig. 1 is the flow diagram of the DOE monitoring integrated encapsulation method of the utility model first preferred embodiment；
The step of Fig. 2 a~Fig. 2 h is the DOE monitoring integrated encapsulation method of the utility model first preferred embodiment signal
Figure, wherein Fig. 2 a, Fig. 2 c, Fig. 2 d are to overlook graph structure, and Fig. 2 b, Fig. 2 e~Fig. 2 h are cross section view structure；
Fig. 3 a is the first ITO pattern schematic diagram of the utility model embodiment one；
Fig. 3 b is the second ITO pattern schematic diagram of the utility model embodiment one；
Fig. 3 c is first ITO pattern of the utility model embodiment one and the connection schematic diagram of the second ITO pattern；
Fig. 3 d is the schematic illustration of Fig. 3 c；
Fig. 4 a is the first ITO pattern schematic diagram of the utility model embodiment two；
Fig. 4 b is the second ITO pattern schematic diagram of the utility model embodiment two；
Fig. 4 c is first ITO pattern of the utility model embodiment two and the connection schematic diagram of the second ITO pattern；
Fig. 4 d is the schematic illustration of Fig. 4 c；
Fig. 5 a is the first ITO pattern schematic diagram of the utility model embodiment three；
Fig. 5 b is the second ITO pattern schematic diagram of the utility model embodiment three；
Fig. 5 c is first ITO pattern of the utility model embodiment three and the connection schematic diagram of the second ITO pattern；
Fig. 5 d is the schematic illustration of Fig. 5 c；
Fig. 6 is the flow diagram of the DOE monitoring integrated encapsulation method of the second preferred embodiment of the utility model；
The step of Fig. 7 a~Fig. 7 i is the DOE monitoring integrated encapsulation method of the second preferred embodiment of the utility model signal
Figure, wherein Fig. 7 a, Fig. 7 c, Fig. 7 d are to overlook graph structure, and Fig. 7 b, Fig. 7 e~Fig. 7 i are cross section view structure；
Fig. 8 a is the first ITO pattern schematic diagram of the utility model embodiment four；
Fig. 8 b is the second ITO pattern schematic diagram of the utility model embodiment four；
Fig. 8 c is first ITO pattern of the utility model embodiment four and the connection schematic diagram of the second ITO pattern；
Fig. 9 a is the first ITO pattern schematic diagram of the utility model embodiment five；
Fig. 9 b is the second ITO pattern schematic diagram of the utility model embodiment five；
Fig. 9 c is first ITO pattern of the utility model embodiment five and the connection schematic diagram of the second ITO pattern.
Specific embodiment
Below against attached drawing and in conjunction with preferred embodiment, the utility model is described in further detail.
As shown in Figure 1, the utility model first preferred embodiment discloses a kind of DOE monitoring integrated encapsulation method, including
Following steps:
A1: such as Fig. 2 a, Fig. 2 b and Fig. 2 c, the first metal electrode 12 is plated respectively on the first face of the first DOE substrate 11
With the first ITO layer 13, and the first ITO layer 13 is etched into scheduled first ITO pattern 14, wherein the first metal electrode 12 is plated in
At the two ends position of first ITO pattern 14, and the first blank position 15 is equipped in the first ITO pattern 14, in the first space bit
Set the first DOE substrate 11 of exposing at 15；
It wherein plates the first metal electrode 12 and the first ITO layer 13 of plating and is etched into the suitable of scheduled first ITO pattern 14
Sequence can successively determine according to the actual situation；Specifically, plating or spraying plating side is respectively adopted on the first face of the first DOE substrate 11
Formula plates the first metal electrode 12 and the first ITO layer 13；First ITO pattern 14 shape between the first metal electrode 12 of two ends
At a first resistor, wherein the first resistor can be is made of single resistance, or by multiple resistance groups parallel with one another
At.
As shown in Fig. 3 a and Fig. 5 a, the first ITO pattern 14 formed between the first metal electrode 12 of two ends first
Resistance is made of single resistance, such as Fig. 4 a, the first ITO pattern 14 formed between the first metal electrode 12 of two ends
One resistance is formed by connecting by two resistor coupled in parallel.
A2: such as Fig. 2 d, performing etching the first DOE substrate 11 at the first blank position 15, is formed for diffraction light
First micro-structure 16；
A3: similar step A1, plate the second metal electrode 22 and second respectively on the first face of the 2nd DOE substrate 21
Second ITO layer 23 is etched into scheduled second ITO pattern 24 by ITO layer 23, wherein the second metal electrode 22 is plated in the 2nd ITO
At the two ends position of pattern 24, and it is equipped with the second blank position 25 in the second ITO pattern 24, reveals at the second blank position 25
2nd DOE substrate 21 out；
It wherein plates the second metal electrode 22 and the second ITO layer 23 of plating and is etched into the suitable of scheduled second ITO pattern 24
Sequence can successively determine according to the actual situation；Specifically, plating or spraying plating side is respectively adopted on the first face of the 2nd DOE substrate 21
Formula plates the second metal electrode 22 and the second ITO layer 23；Second ITO pattern 24 shape between the second metal electrode 22 of two ends
At a second resistance, wherein the second resistance can be is made of single resistance, or by multiple resistance groups parallel with one another
At.
As shown in Fig. 3 b and Fig. 5 b, the second ITO pattern 24 formed between the second metal electrode 22 of two ends second
Resistance is made of single resistance, such as Fig. 4 b, the second ITO pattern 24 formed between the second metal electrode 22 of two ends
Two resistance are formed by connecting by two resistor coupled in parallel.
A4: similar step A2, the 2nd DOE substrate 21 is performed etching at the second blank position 25, is formed and is used for diffraction
Second micro-structure 26 of light；
A5: such as Fig. 2 e, the first face of the first face of the first DOE substrate 11 and the 2nd DOE substrate 21 is oppositely arranged progress
Assembling, is bonded the first DOE substrate 11 with the 2nd DOE substrate 21 by the spacer 30 of predetermined thickness；
Specifically, spacer 30 uses UV resinous material, with a thickness of 80~150 μm, such as 100 μm.
A6: section cutting is carried out at the position where the first metal electrode 12 and the second metal electrode 22, in the cutting
Position at section on plate connection metal 40 with by the first metal electrode 12 and the second metal electrode 22 according to preset company
The relationship of connecing connects, and forms DOE and monitors integrating packaging module.
Specifically, step A6 the following steps are included:
A61: such as Fig. 2 f, section is carried out at the position where the first metal electrode 12 and the second metal electrode 22 for the first time
Cutting；
A62: such as Fig. 2 g, connection metal 40 is plated on the interface at the position of the cutting with by 12 He of the first metal electrode
Second metal electrode 22 is connected according to preset connection relationship；
Wherein, preset connection relationship refers to the corresponding first resistor of the first ITO pattern 14 and the second ITO pattern 24
Corresponding second resistance carries out in series or in parallel；As shown in Fig. 3 c and Fig. 4 c, first resistor and second resistance are gone here and there
Connection carries out first resistor and second resistance in parallel as shown in Figure 5 c；Namely the integrated envelope of DOE monitoring formed as shown in Figure 3c
Die-filling piece is connected in series namely two resistance are connected in series in measuring circuit 90, schematic diagram such as Fig. 3 d by two resistance；Such as figure
The DOE monitoring integrating packaging module formed shown in 4c is made of four resistance, namely resistance then series connection first in parallel connects two-by-two
It connects in measuring circuit 90, schematic diagram such as Fig. 4 d；Form as shown in Figure 5 c DOE monitoring integrating packaging module by two resistance simultaneously
Join namely two resistor coupled in parallel are connected in measuring circuit 90, schematic diagram such as Fig. 5 d.
A63: such as Fig. 2 h, continuing to do second of cutting at the position of original cutting, until each DOE monitors integration packaging mould
Block is kept completely separate, and encapsulation is completed to obtain DOE monitoring integrating packaging module.
The DOE as made from the DOE of first preferred embodiment monitoring integrated encapsulation method monitors integrating packaging module, tool
Body structure are as follows: including the first DOE substrate 11 and the 2nd DOE substrate 21, in which: on the first face of the first DOE substrate 11 respectively
Equipped with the first metal electrode 12 and the first ITO pattern 14, wherein the both ends of the first ITO pattern 14 are arranged in the first metal electrode 12
At head position, and it is equipped with the first blank position 15 in the first ITO pattern 14, the first DOE is exposed at the first blank position 15
Substrate 11, and the first micro-structure 16 to form diffraction light is etched at the first blank position 15；The first of the 2nd DOE substrate 21
The second metal electrode 22 and the second ITO pattern 24 are respectively equipped on face, wherein the second metal electrode 22 is arranged in the second ITO pattern
At 24 two ends position, and it is equipped with the second blank position 25 in the second ITO pattern 24, exposes at the second blank position 25
2nd DOE substrate 21, and the second micro-structure 26 to form diffraction light is etched at the second blank position 25；First DOE substrate 11
The first face and the 2nd DOE substrate 21 the first face be oppositely arranged and be bonded in respectively predetermined thickness spacer 30 two sides,
And the first metal electrode 12 and the second metal electrode 22 are connected by connection metal 40 according to preset connection relationship.Into
One step, the first ITO pattern 14 being equipped on the first face of the first DOE substrate 11 is by being plated in the first DOE substrate 11
It etches and is formed in the first ITO layer 13 on first face, the second ITO pattern 24 being equipped on the first face of the 2nd DOE substrate 21
It is to be formed by being etched in the second ITO layer 23 for being plated on the first face of the 2nd DOE substrate 21.First ITO pattern 14 is at both ends
Form a first resistor between first metal electrode 12 of head, the second ITO pattern 24 two ends the second metal electrode 22 it
Between form a second resistance, first resistor and second resistance are made of respectively single resistance or by multiple electricity parallel with one another
Resistance composition.Preset connection relationship refers to the corresponding first resistor of the first ITO pattern 14 is corresponding with the second ITO pattern 24
Second resistance carry out it is in series or in parallel.Spacer 30 uses UV resinous material, with a thickness of 80~150 μm.
The DOE of the first preferred embodiment monitors integrating packaging module, not only simplifies manufacturing process, reduce manufacture at
Originally, direct monitoring when while being able to achieve the stringent protection to DOE working environment, and being abnormal to DOE, so that DOE is more
Add reliable, safety, improves product competitiveness；In addition, being wherein to etch shape in DOE substrate for the micro-structure of diffraction light
At reducing micro-structure and fall off risk, improve the reliability of DOE monitoring integrating packaging module.
As shown in fig. 6, the second preferred embodiment of the utility model discloses a kind of DOE monitoring integrated encapsulation method, including
Following steps:
B1: such as Fig. 7 a, Fig. 7 b and Fig. 7 c, the first metal electrode 52 is plated respectively on the first face of the first DOE substrate 51
With the first ITO layer 53, the first ITO layer 53 is etched into scheduled first ITO pattern 54, wherein the first metal electrode 52 is plated in
At the two ends position of one ITO pattern 54；
It wherein plates the first metal electrode 52 and the first ITO layer 53 of plating and is etched into the suitable of scheduled first ITO pattern 54
Sequence can successively determine according to the actual situation；Specifically, plating or spraying plating side is respectively adopted on the first face of the first DOE substrate 51
Formula plates the first metal electrode 52 and the first ITO layer 53；First ITO pattern 54 shape between the first metal electrode 52 of two ends
At a first resistor, wherein the first resistor can be is made of single resistance, or by multiple resistance groups parallel with one another
At.
As shown in Fig. 8 a and Fig. 9 a, the first ITO pattern 54 formed between the first metal electrode 52 of two ends first
Resistance is made of single resistance.
B2: such as Fig. 7 d and Fig. 7 e, then re-forming one layer of first etch layer 55 on the first face of the first DOE substrate 51,
And the first micro-structure 56 for being used for diffraction light is formed on the surface of the first etch layer 55；
In one embodiment, redeposited one layer of first etch layer 55 on the first face of the first DOE substrate 51, and the
The surface etch of one etch layer 55 goes out to be used for the first micro-structure 56 of diffraction light, which is silica (SiO2)
Or silicon oxynitride (SixOyNz)；
In another embodiment, one layer of first etch layer 55 is coated again on the first face of the first DOE substrate 51, and
The surface of first etch layer 55 imprints out the first micro-structure 56 for diffraction light using nano impression mode, and uses photocuring
Or heat cure carries out shaping, wherein the first etch layer 55 is resinous material；
As shown in Fig. 8 a and Fig. 9 a, wherein being the relativeness in order to indicate the first micro-structure 56 and the first ITO pattern 54
Simplify signal, actually the first micro-structure 56 is arranged in the first etch layer 55.
B3: similar step B1, plate the second metal electrode 62 and second respectively on the first face of the 2nd DOE substrate 61
Second ITO layer 63 is etched into scheduled second ITO pattern 64 by ITO layer 63, wherein the second metal electrode 62 is plated in the 2nd ITO
At the two ends position of pattern 64；
It wherein plates the second metal electrode 62 and the second ITO layer 63 of plating and is etched into the suitable of scheduled second ITO pattern 64
Sequence can successively determine according to the actual situation；Specifically, plating or spraying plating side is respectively adopted on the first face of the 2nd DOE substrate 61
Formula plates the second metal electrode 62 and the second ITO layer 63；Second ITO pattern 64 shape between the second metal electrode 62 of two ends
At a second resistance, wherein the second resistance can be is made of single resistance, or by multiple resistance groups parallel with one another
At.
As shown in Fig. 8 b and Fig. 9 b, the second ITO pattern 64 formed between the second metal electrode 62 of two ends second
Resistance is made of single resistance.
B4: similar step B2, one layer of second etch layer 65 is then re-formed on the first face of the 2nd DOE substrate 61, and
The second micro-structure 66 for being used for diffraction light is formed on the surface of the second etch layer 65；
In one embodiment, redeposited one layer of second etch layer 65 on the first face of the 2nd DOE substrate 61, and the
The surface etch of two etch layers 65 goes out to be used for the second micro-structure 66 of diffraction light, wherein the second etch layer 65 is silica
(SiO2) or silicon oxynitride (SixOyNz)；
In another embodiment, one layer of second etch layer 65 is coated again on the first face of the 2nd DOE substrate 61, and
The surface of second etch layer 65 imprints out the second micro-structure 66 for diffraction light using nano impression mode, and uses photocuring
Or heat cure carries out shaping, wherein the second etch layer 65 is resinous material；
As shown in Fig. 8 b and Fig. 9 b, wherein being the relativeness in order to indicate the second micro-structure 66 and the second ITO pattern 64
Simplify signal, actually the second micro-structure 66 is arranged in the second etch layer 65.
B5: such as Fig. 7 f, the surface on the surface of the first etch layer 55 and the second etch layer 56 being oppositely arranged and is assembled, and is led to
The spacer 70 for crossing predetermined thickness bonds the first etch layer 55 and the second etch layer 56；
Specifically, spacer 70 uses UV resinous material, with a thickness of 80~150 μm, such as 100 μm.
B6: section cutting is carried out at the position where the first metal electrode 52 and the second metal electrode 62, in the cutting
Position at section on plate connection metal 80 with by the first metal electrode 52 and the second metal electrode 62 according to preset company
The relationship of connecing connects, and forms DOE and monitors integrating packaging module.
Specifically, step A6 the following steps are included:
B61: such as Fig. 7 g, section is carried out at the position where the first metal electrode 52 and the second metal electrode 62 for the first time
Cutting；
B62: such as Fig. 7 h, connection metal 80 is plated on the interface at the position of the cutting with by 52 He of the first metal electrode
Second metal electrode 62 is connected according to preset connection relationship；
Wherein, preset connection relationship refers to the corresponding first resistor of the first ITO pattern 54 and the second ITO pattern 64
Corresponding second resistance carries out in series or in parallel；As shown in Figure 8 c, first resistor and second resistance are connected, is such as schemed
Shown in 9c, first resistor and second resistance are carried out in parallel；Namely form as shown in Figure 8 c DOE monitoring integrating packaging module by
Two resistance are connected in series namely two resistance are connected in series in measuring circuit 90, schematic diagram such as Fig. 3 d；Group as is shown in fig. 9 c
At DOE monitoring integrating packaging module formed by two resistor coupled in parallel namely two resistor coupled in parallel are connected in measuring circuit 90,
Schematic diagram such as Fig. 5 d.
B63: such as Fig. 7 i, continuing to do second of cutting at the position of original cutting, until each DOE monitors integration packaging mould
Block is kept completely separate, and encapsulation is completed to obtain DOE monitoring integrating packaging module.
The DOE as made from the DOE of second preferred embodiment monitoring integrated encapsulation method monitors integrating packaging module, tool
Body structure are as follows: including the first DOE substrate 51 and the 2nd DOE substrate 61, in which: on the first face of the first DOE substrate 51 respectively
Equipped with the first metal electrode 52 and the first ITO pattern 54, set wherein the first metal electrode sets 52 at the both ends of the first ITO pattern 54
At head position, it is additionally provided with one layer of first etch layer 55 on the first metal electrode 52 and the first ITO pattern 54, in the first etch layer
55 are equipped with the first micro-structure 56 for diffraction light；The second metal electricity is respectively equipped on the first face of the 2nd DOE substrate 61
Pole 62 and the second ITO pattern 64, wherein the second metal electrode 62 is arranged at the two ends position of the second ITO pattern 64,
It is additionally provided with one layer of second etch layer 65 on two metal electrodes 62 and the second ITO pattern 64, is equipped with and is used in the second etch layer 65
Second micro-structure 66 of diffraction light；The surface of first etch layer 55 and the surface of the second etch layer 65 are oppositely arranged and bond respectively
On the two sides of the spacer 70 of predetermined thickness, and the first metal electrode and the second metal electrode are by connecting metal 80 according to pre-
If connection relationship connect.Further, the first etch layer 55 and the second etch layer 65 are respectively silica, nitrogen oxidation
Silicon or resinous material.First ITO pattern 54 forms a first resistor between the first metal electrode 52 of two ends, and second
ITO pattern 64 forms a second resistance between the second metal electrode 62 of two ends；Wherein first resistor and second resistance point
It is not made of single resistance or is made of multiple resistance parallel with one another.Preset connection relationship, which refers to, schemes the first ITO
The corresponding first resistor of case 54 second resistance corresponding with the second ITO pattern 64 carries out in series or in parallel；Spacer 70
Using UV resinous material, with a thickness of 80~150 μm.
The DOE of second preferred embodiment monitors integrating packaging module, not only simplifies manufacturing process, reduce manufacture at
Originally, direct monitoring when while being able to achieve the stringent protection to DOE working environment, and being abnormal to DOE, so that DOE is more
Add reliable, safety, improves product competitiveness.
The DOE monitoring integrating packaging module wiring of the preferred embodiment in the utility model is simpler, can monitor the machine of DOE
Tool integrality (such as glass breaking), heat swing (expanding with heat and contract with cold), steam problem, and external interference resistance is strong；Wherein needle
When to mechanical integrity (such as the glass breaking) for monitoring DOE, which monitors the amplitude variation of the electric signal of integrating packaging module
Larger (such as first resistor, when connecting with second resistance, resistance can become infinitely great moment), so that monitoring effect is clearly,
So that DOE is relatively reliable, safety.
It, cannot the above content is specific preferred embodiment further detailed description of the utility model is combined
Assert that the specific implementation of the utility model is only limited to these instructions.For those skilled in the art of the present invention
For, without departing from the concept of the premise utility, several equivalent substitute or obvious modifications, and performance can also be made
Or purposes is identical, all shall be regarded as belonging to the protection scope of the utility model.
Claims (10)
1. a kind of DOE monitors integrating packaging module, which is characterized in that including the first DOE substrate and the 2nd DOE substrate, in which:
It is respectively equipped with the first metal electrode and the first ITO pattern on the first face of the first DOE substrate, wherein described first
Metal electrode is arranged at the two ends position of first ITO pattern, and the first blank is equipped in first ITO pattern
Expose the first DOE substrate at first blank position, and etch to be formed at first blank position and spread out in position
Penetrate the first micro-structure of light；
It is respectively equipped with the second metal electrode and the second ITO pattern on the first face of the 2nd DOE substrate, wherein described second
Metal electrode is arranged at the two ends position of second ITO pattern, and the second blank is equipped in second ITO pattern
Expose the 2nd DOE substrate at second blank position, and etch to be formed at second blank position and spread out in position
Penetrate the second micro-structure of light；
First face of the first DOE substrate and the first face of the 2nd DOE substrate are oppositely arranged and are bonded in respectively predetermined
The two sides of the spacer of thickness, and first metal electrode and second metal electrode are by connecting metal according to default
Connection relationship connect.
2. DOE according to claim 1 monitors integrating packaging module, which is characterized in that wherein in the first DOE substrate
The first ITO pattern for being equipped with of the first face be by being carved in the first ITO layer for being plated on the first face of the first DOE substrate
Erosion is formed, and the second ITO pattern being equipped on the first face of the 2nd DOE substrate is by being plated in the 2nd DOE substrate
The first face on the second ITO layer on etch formed.
3. DOE according to claim 1 monitors integrating packaging module, which is characterized in that first ITO pattern is at both ends
A first resistor, second metal of second ITO pattern in two ends are formed between first metal electrode of head
A second resistance is formed between electrode.
4. DOE according to claim 3 monitors integrating packaging module, which is characterized in that the first resistor and described the
Two resistance are made of single resistance respectively or are made of multiple resistance parallel with one another.
5. DOE according to claim 3 monitors integrating packaging module, which is characterized in that preset connection relationship refer to by
The corresponding first resistor of first ITO pattern second resistance corresponding with second ITO pattern carries out
It is in series or in parallel.
6. DOE according to claim 1 monitors integrating packaging module, which is characterized in that the spacer uses UV resin
Class material, with a thickness of 80~150 μm.
7. a kind of DOE monitors integrating packaging module, which is characterized in that including the first DOE substrate and the 2nd DOE substrate, in which:
It is respectively equipped with the first metal electrode and the first ITO pattern on the first face of the first DOE substrate, wherein described first
Metal electrode is arranged at the two ends position of first ITO pattern, schemes in first metal electrode and the first ITO
It is additionally provided with one layer of first etch layer in case, the first micro-structure for diffraction light is equipped in first etch layer；
It is respectively equipped with the second metal electrode and the second ITO pattern on the first face of the 2nd DOE substrate, wherein described second
Metal electrode is arranged at the two ends position of second ITO pattern, schemes in second metal electrode and the 2nd ITO
It is additionally provided with one layer of second etch layer in case, the second micro-structure for diffraction light is equipped in second etch layer；
The surface of first etch layer and the surface of second etch layer are oppositely arranged and are bonded in predetermined thickness respectively
The two sides of spacer, and first metal electrode and second metal electrode are by connecting metal according to preset connection
Relationship connects.
8. DOE according to claim 7 monitors integrating packaging module, which is characterized in that first etch layer and described
Second etch layer is respectively silica, silicon oxynitride or resinous material；The spacer uses UV resinous material, thick
Degree is 80~150 μm.
9. DOE according to claim 7 monitors integrating packaging module, which is characterized in that first ITO pattern is at both ends
A first resistor, second metal of second ITO pattern in two ends are formed between first metal electrode of head
A second resistance is formed between electrode；Wherein the first resistor and the second resistance be made of respectively single resistance or
It is made of multiple resistance parallel with one another.
10. DOE according to claim 9 monitors integrating packaging module, which is characterized in that preset connection relationship refer to by
The corresponding first resistor of first ITO pattern second resistance corresponding with second ITO pattern carries out
It is in series or in parallel.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110702381A (en) * | 2019-09-27 | 2020-01-17 | 深圳市安思疆科技有限公司 | Packaging method and monitoring device for integrity monitoring of DOE (data object analysis) |
| CN112824956A (en) * | 2019-11-21 | 2021-05-21 | 三赢科技（深圳）有限公司 | Light-transmitting sheet, laser projection module, depth camera and electronic device |
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2018
- 2018-07-10 CN CN201821088540.XU patent/CN208367349U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110702381A (en) * | 2019-09-27 | 2020-01-17 | 深圳市安思疆科技有限公司 | Packaging method and monitoring device for integrity monitoring of DOE (data object analysis) |
| CN112824956A (en) * | 2019-11-21 | 2021-05-21 | 三赢科技（深圳）有限公司 | Light-transmitting sheet, laser projection module, depth camera and electronic device |
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