CN208315581U - Novel photoconductive detector based on spiral configuration - Google Patents
Novel photoconductive detector based on spiral configuration Download PDFInfo
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- CN208315581U CN208315581U CN201821065289.5U CN201821065289U CN208315581U CN 208315581 U CN208315581 U CN 208315581U CN 201821065289 U CN201821065289 U CN 201821065289U CN 208315581 U CN208315581 U CN 208315581U
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Abstract
A novel photoconductive detector based on spiral configuration belongs to the technical field of photoelectric detector application, and comprises an insulating substrate and a photoconductive layer arranged on the insulating substrate, wherein a photoresistor is arranged in the photoconductive layer, the photoresistor is arranged in a spiral curve shape, the photoresistor comprises a first resistor and a second resistor which are connected at the center, the first resistor and the second resistor are spiral curves which extend out in opposite directions at the center, two gap spaces formed between the first resistor and the second resistor are respectively a positive electrode and a negative electrode, a positive lead and a negative lead which are arranged on the insulating substrate are arranged in the spaces of the positive electrode and the negative electrode, the photoconductive detector is constructed based on the characteristics of the spiral curve, under the condition of ensuring the same light receiving area of the photoresistor, the electrode spacing is reduced as much as possible, and the photoelectron transit time is shortened, thereby bringing new possibilities for photoelectric detection under extremely weak light conditions and miniaturization of the size of the photoconductive detector.
Description
Technical field
The utility model belongs to photodetector application technical field, and in particular to a kind of novel light based on helical configuration
Photoconductive detector.
Background technique
Photoconductive detector is mainly made of photo resistance, is widely used in every field, also known as photo resistance,
Its working principle is that being based on inner photoeffect, illumination is stronger, and the photo resistance in photoconductive detector is lower.Existing light
Quick resistance is mostly laminated structure, to absorb more luminous energy, under conditions of reducing electrode spacing as far as possible, and photosensitive electricity
Resistance is frequently with " snakelike " structure, so that the light receiving surface product of photo resistance is improved, with photoconduction during production application
The further shortening of response time needed for detector, original " snakelike " structure cannot sufficiently meet the light table of photo resistance
Area, so that challenge is proposed to the photodetector under low light condition, in addition, the frequency response of photodetector is imitated under low light condition
Fruit is also bad.
Summary of the invention
In order to overcome deficiency present in existing photodetector technical field, the utility model proposes one kind to be based on spiral shell
The novel photoelectric of rotation configuration leads detector, which has stronger versatility and portability, can push related photoconduction rapidly
Panel detector structure transition and upgrade.
The utility model is achieved through the following technical solutions:
A kind of novel photoelectric based on helical configuration leads detector, square on an insulating substrate including insulating substrate and setting
Photoconductive layer is provided with photo resistance in the photoconductive layer, and the photo resistance is arranged to helical curve in photoconductive layer
Shape, gap is electrode between the helical curve of the photo resistance, and the electrode is in setting on the outside of the insulating substrate
It is equipped with lead.
Preferably, the photo resistance includes the first resistor and second resistance in center connection, first electricity
Resistance and the second resistance are arranged to helix configuration, and the helix of the helix of the first resistor and the second resistance is
It extends out in a reverse direction at center, between the first resistor and the second resistance a clearance space is positive
Electrode, another clearance space between the first resistor and the second resistance are negative electrode, the space of the positive electrode
It is inside equipped with the positive lead of a setting on an insulating substrate, is equipped with a setting on an insulating substrate in the space of the negative electrode
Negative lead.
Preferably, the first resistor and second resistance setting are in the same plane, the first resistor
Spacing between the second resistance is equal.
Preferably, the photo resistance is by including being made suitable for the GaN material of ultraviolet band.
Preferably, CdS, PbS material that the photo resistance is suitable for visible light wave range are made.
Preferably, the photo resistance be suitable for HgxCd1-xTe, InSb of infrared band, Ge:Au, Ge:Zn,
Ge:Cd material is made.
Preferably, the photo resistance is arranged to flake.
Preferably, the helical curve that the photo resistance is arranged to is archimedes curve, the insulating substrate is set
It is set to circle.
Preferably, the radial helical curve density σ of the photo resistance meets σ=2N/D, wherein N is photo resistance
The circle number that the helical curve being arranged to turns over, D are the diameter of insulating substrate.
Preferably, the output electric current I of the photoconductive detectorpWith response cutoff frequency fHCMeet:
Wherein σ is the spiral line density of photo resistance, lzFor electrode spacing, E is light irradiance, τcFor carrier lifetime, U
For external circuit voltage, Γ (σ, lz) it is the structure factor that characterization photo resistance is arranged, C is with photo resistance self-characteristic and outside
The related constant of boundary's environment.
Compared with prior art, the beneficial effects of the utility model have:
A kind of novel photoelectric based on helical configuration leads detector, the characteristic construction photoconduction detection based on helical curve
Device, guaranteeing under conditions of photo resistance identical light-receiving area, reduction electrode spacing as far as possible, when shortening photoelectron and getting over
Between, to bring new possibility for photodetection under the low light condition of pole and the micromation of photoconductive detector size, this is practical new
Type improves the gain effect of photoconductive detector simultaneously, reduces photoelectron degree not only and gets over the time but also can fully ensure that photo resistance
The structure of light-receiving area solves photoconductive detector high-gain and difficulty that high frequency response can not get both.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Marginal data: 1: insulating substrate, 2: photo resistance, 3: electrode, 4: lead.
Specific embodiment
Below in conjunction with the attached drawing of the utility model, the technical solution of the utility model is clearly and completely described,
Obviously, described is only the utility model a part of the embodiment, instead of all the embodiments.Based in the utility model
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts,
It fall within the protection scope of the utility model.
Embodiment 1
As shown in Fig. 1, a kind of novel photoelectric based on helical configuration leads detector,
The above is only the preferred embodiment of the utility model, and the protection scope of the utility model is not limited merely to
Above-described embodiment, technical solution belonging to the idea of the present invention belong to the protection scope of the utility model.It should refer to
Out, for those skilled in the art, it is without departing from the principle of the utility model it is several improvement and
Retouching, these improvements and modifications also should be regarded as the protection scope of the utility model.
A kind of novel photoelectric based on helical configuration leads detector, including insulating substrate and is arranged in insulating substrate with glazing
Photo resistance in conductance layer, insulating substrate are circular in configuration, and photo resistance is arranged to the shape of helical curve, photo resistance packet
The first resistor and second resistance in center connection are included, first resistor and second resistance are arranged to helix configuration, first resistor
Helix and the helix of second resistance be to extend out in a reverse direction at center, first resistor and second resistance it
Between a clearance space be positive electrode, another clearance space between first resistor and second resistance is negative electrode, positive electricity
It is equipped with the positive lead of a setting on an insulating substrate in the space of pole, is equipped with a setting in the space of negative electrode and is served as a contrast in insulation
Negative lead on bottom.
First resistor and second resistance can be not provided in the same plane, but preferably first resistor and second resistance are to set
It sets in the same plane, the spacing between first resistor and second resistance is equal；Photo resistance is arranged to flake, to inhale
Receive more luminous energy；Photo resistance by include but is not limited to suitable for ultraviolet band GaN, suitable for visible light wave range CdS,
PbS, the Hg suitable for infrared bandxCd1-xThe material of Te, InSb, Ge:Au, Ge:Zn, Ge:Cd are made, and the utility model provides
A kind of inexpensive, versatile, the relatively simple novel photoelectric of production leads detector, to advanced optimizing high frequency, dim light
Under the conditions of photoconductive detection performance.
The helical curve that photo resistance is arranged to is archimedes curve, and the insulating substrate is arranged to circle.
In polar coordinates, Archimedes spiral equation are as follows:
ρ=a φ
In photoconductive detector, characterizes and exported under the certain illumination condition of core index of photoconductive detectivity
Photoelectric current IpSize:
Wherein lzFor electrode spacing, τcFor electron transit time, E is light irradiance, and S is light-receiving area, and U is external circuit electricity
Pressure, C are constant related with photo resistance self-characteristic and external environment.
If wishing to optimize photoconductive detector sensitivity under the conditions of same light is shone, i.e. increase photoelectric current output, it is only necessary to
Reduce electrode spacing and increases light-receiving area.
In the utility model, take helical curve design structure that can accomplish to increase light while reducing electrode spacing
Area now illustrates the realization process of the program by taking spiral of Archimedes as an example.
If detector base diameter is D, when helix extends to detector boundary, rotate through N circle, in polar coordinates, Ah
Base Mead helix equation are as follows:
ρ=a φ
Re-define radial solenoid density σ:
σ=2N/D
Photoelectric current I will be calculated belowpWith σ and lzBetween relationship；
Firstly, the light-receiving area of spiral shape photo resistance are as follows:
Then photoelectric current output size are as follows:
NoteTo characterize photo resistance
The structure factor of arrangement, while must wherein meet: σ lz< 1, the size of the structure factor directly determine that photoelectric current output is big
It is small, it and electrode spacing lzAt stringent negative correlation, it is positively correlated with spiral line density σ at stringent.
As it can be seen that can pass through under conditions of extraneous illumination condition is constant, operating voltage is constant, detector size is fixed
Reduce electrode spacing and increase spiral line density and effectively increases photoelectric current output.
Theoretically can be by reducing electrode spacing constantly to infinitely amplify photoelectric current, this is photoelectricity under the low light condition of pole
Detection and the micromation of photoconductive detector size bring new possibility.
The response cutoff frequency of photoconductive detectorSo that
It can be seen that under conditions of guaranteeing that photoelectric current output is certain, it still can be by increasing spiral line density, reducing electrode
Spacing or the controlled manner for increasing applied voltage U advanced optimize the frequency response characteristic of photoconductive detector, this for it is low at
The production of the photodetector of this high response frequency brings new possibility.
The radial helical curve density σ of photo resistance meets σ=2N/D, and wherein N is the helical curve that photo resistance is arranged to
The circle number that line turns over, D are the diameter of insulating substrate.
The output electric current I of the photoconductive detectorpWith response cutoff frequency fHCMeet:
Wherein σ is the spiral line density of photo resistance, lzFor electrode spacing, E is light irradiance, τcFor carrier lifetime, U
For external circuit voltage, Γ (σ, lz) it is the structure factor that characterization photo resistance is arranged, C is with photo resistance self-characteristic and outside
The related constant of boundary's environment.
In practical operation, the size of photoconductive detector is certain, i.e. D is constant, by subtracting under the low light condition of pole
Small electrode spacing increases working surface spiral line density, and output electric current can be dramatically increased by increasing applied voltage, to promote light
Photoconductive detector sensitivity；It, can be close by increasing working surface helix to keep output electric current certain in micromodule equipment
Degree realizes the micromation of photoconductive detector.
It, can be by increasing photoconduction under conditions of keeping photoelectric current output constant in response high frequency light signal process
The applied voltage of detector reduces the response frequency that electrode spacing significantly to optimize detector.
In addition to this, the photo resistance of the utility model can also be arranged to triangle or the arrangement of rectangular helical configuration
Design is to optimize photoelectricity to detector sensitivity and frequency-response characteristic.
The explanation of the preferred embodiment in the utility model is contained above, this is the technology in order to which the utility model is described in detail
Feature is not intended to for utility model content being limited in concrete form described in embodiment, according in the utility model
Hold other modifications and variations that purport carries out also to be protected by this patent.The purport of the content of the present invention is by claims institute
It defines, rather than is defined by the specific descriptions of embodiment.
Claims (9)
1. a kind of novel photoelectric based on helical configuration leads detector, which is characterized in that insulating including insulating substrate and setting
Photoconductive layer above substrate is provided with photo resistance in the photoconductive layer, and the photo resistance is arranged in photoconductive layer
The shape of helical curve, gap is electrode between the helical curve of the photo resistance, and the electrode is close to insulation lining
Lead is provided on the outside of bottom.
2. a kind of novel photoelectric based on helical configuration according to claim 1 leads detector, which is characterized in that the light
Quick resistance includes the first resistor and second resistance in center connection, and the first resistor and the second resistance are arranged to spiral
The helix of line configuration, the helix of the first resistor and the second resistance is extended out in a reverse direction at center
, a clearance space between the first resistor and the second resistance is positive electrode, the first resistor and described the
Another clearance space between two resistance is negative electrode, and a setting is equipped in the space of the positive electrode on an insulating substrate
Positive lead, the negative lead of a setting on an insulating substrate is equipped in the space of the negative electrode.
3. a kind of novel photoelectric based on helical configuration according to claim 2 leads detector, which is characterized in that described
One resistance and the second resistance are arranged in the same plane, the spacing phase between the first resistor and the second resistance
Deng.
4. a kind of novel photoelectric based on helical configuration according to claim 3 leads detector, which is characterized in that the light
Quick resistance is by including being made suitable for the GaN material of ultraviolet band.
5. a kind of novel photoelectric based on helical configuration according to claim 4 leads detector, which is characterized in that the light
Quick resistance is made of CdS, PbS material for being suitable for visible light wave range.
6. a kind of novel photoelectric based on helical configuration according to claim 5 leads detector, which is characterized in that the light
Quick resistance is made of HgxCd1-xTe, InSb, Ge:Au, Ge:Zn, Ge:Cd material for being suitable for infrared band.
7. a kind of novel photoelectric based on helical configuration according to claim 6 leads detector, which is characterized in that the light
Quick resistance is arranged to flake.
8. a kind of novel photoelectric based on helical configuration according to claim 1-6 leads detector, feature exists
In the helical curve that the photo resistance is arranged to is archimedes curve, and the insulating substrate is arranged to circle.
9. a kind of novel photoelectric based on helical configuration according to claim 8 leads detector, which is characterized in that the light
The radial helical curve density σ of quick resistance meets σ=2N/D, the circle that the helical curve that wherein N is arranged to for photo resistance turns over
Number, D are the diameter of insulating substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821065289.5U CN208315581U (en) | 2018-07-06 | 2018-07-06 | Novel photoconductive detector based on spiral configuration |
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| CN201821065289.5U CN208315581U (en) | 2018-07-06 | 2018-07-06 | Novel photoconductive detector based on spiral configuration |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110967684A (en) * | 2019-11-21 | 2020-04-07 | 宁波飞芯电子科技有限公司 | Size determination method and device for photoelectric detector and photoelectric detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110967684A (en) * | 2019-11-21 | 2020-04-07 | 宁波飞芯电子科技有限公司 | Size determination method and device for photoelectric detector and photoelectric detector |
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