CN210182399U - Spin coating on MoS by using gold particles2Photoelectric detector of/graphite alkene - Google Patents
Spin coating on MoS by using gold particles2Photoelectric detector of/graphite alkene Download PDFInfo
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- CN210182399U CN210182399U CN201821864044.9U CN201821864044U CN210182399U CN 210182399 U CN210182399 U CN 210182399U CN 201821864044 U CN201821864044 U CN 201821864044U CN 210182399 U CN210182399 U CN 210182399U
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Abstract
The utility model belongs to the photoelectric detector field, concretely designs one kind and utilizes gold granule to scribble soon at MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The graphene photoelectric detector comprises a gate electrode, a ferroelectric insulating layer and a metal particle coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2A graphene vertical heterojunction, a Pt source electrode and a Pt drain electrode. The utility model discloses well MoS2The highly selective light absorption of the layers generates charges that are transferred to the graphene layer through the built-in electric field, and due to the high carrier mobility of graphene, the charges can be cycled to the graphene layer multiple times. In MoS2The graphene vertical heterojunction is spin-coated with gold particles, so that the local electric field intensity can be effectively increased by utilizing the optical field generated by surface plasma excitation, the photoelectric conversion efficiency is improved, and the photocurrent is increased. The incident light can be effectively converted into surface plasma after being absorbed, and the absorption of the incident light is enhanced.
Description
Technical Field
The utility model belongs to the photoelectric field, concretely relates to utilize gold granule to scribble soon at MoS2Plasma enhanced MoS obtained on surface of graphene vertical heterojunction2A graphene photodetector.
Background
The conventional silicon-based photodetectors commercialized at present are expensive and cannot detect light with large wavelength, which greatly limits the development of the photodetectors. Thus broadening the detection of light by the photodetector to be the current hot spot. After graphene was successfully exfoliated by geom et al in 2004, two-dimensional materials (graphene, transition metal chalcogenides, black phosphorus, and the like) became new stars for a new generation of electronic devices with their unique physical properties. Graphene belongs to a zero-band-gap semiconductor material and has carrier mobility 200 times that of a traditional silicon material. However, graphene has fatal disadvantages in application to photodetectors, limited by a short absorption cross section and a short exciton lifetime. MoS2Is one of transition metal chalcogenides, and is currently expected to be applied to future electronic devices due to the bandgap between 1.2eV and 1.8eV (the bandgap decreases from 1.8eV for a single layer to 1.2eV for a bulk with the increase of the number of layers) and the relatively high mobility. And MoS2The detector absorbs light far more than graphene, which makes up for the short plate of graphene on the absorption of light. Van der Waals vertical heterojunctions have been extensively studied in recent years because of their unique and interesting physical properties, and the constituent Van der Waals heterostructures not only possess the properties of any of the materials that constitute their heterojunctions, but also are superior to the properties of either material alone. The light field generated by the surface plasma excitation effectively increases the local electric field intensity, improves the photoelectric conversion efficiency and increases the photocurrent. The incident light can be efficiently converted into surface plasmon after being absorbed. Thus, a method of spin coating with gold particlesMoS2Plasma enhanced MoS obtained on surface of graphene vertical heterojunction2Graphene photodetector, such a structure utilizing MoS2The strong selective light absorption of layer produces electric charge, and electric charge passes through built-in electric field and transfers to graphite alkene layer to because the high carrier mobility of graphite alkene, electric charge can carry out manifold cycles to graphite alkene layer, has solved graphite alkene detector weak point and short exciton life-span's on the light absorption problem, simultaneously at the MoS2A layer of gold particles is spin-coated on the surface of the graphene vertical heterojunction, so that the absorption of light is more effectively increased, and MoS (metal organic silicon)2The graphene vertical heterojunction detector tends to be more perfect.
Disclosure of Invention
In order to solve the problems existing in the detector, the utility model provides a high responsivity, high light-dark current ratio, high carrier mobility and short response time utilize gold particles to be coated on MoS in a rotating way2Plasma enhanced MoS obtained on surface of graphene vertical heterojunction2A graphene detector. The technical scheme is as follows:
spin coating on MoS by using gold particles2The graphene photoelectric detector is characterized in that the structure from bottom to top is a gate electrode, a ferroelectric insulating layer and MoS coated with gold particles in a spinning mode2Plasma enhanced MoS obtained on surface of graphene heterojunction2A graphene vertical heterojunction, a Pt source electrode and a Pt drain electrode.
Further, the gate electrode is made of SiO with a thickness of 100nm2And an Au gate electrode is evaporated on the P-type heavily doped Si substrate.
Further, the ferroelectric insulating layer is made of bismuth titanate.
Further, the gold particles are spin coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction is a van der waals vertical heterojunction.
Further, the gold particles are spin coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The graphene vertical heterojunction is modified by gold particles to obtain surface plasma enhancement.
The gate electrode is the first layer of the detector, the gate electrode is a single-layer gold with high performance grown by a double ion beam sputtering method, and is patterned at 100nm SiO by a mask plate2An Au gate electrode is formed on the P-type heavily doped Si substrate. 100nm SiO2The P-type heavily doped Si substrate can be used as a carrier, and can also directly avoid the contact of an electrode and N-type Si. The Au is used as the back gate electrode, and the regulation and control capability of the gate electrode is stronger than that of directly using the P-type heavily doped Si.
The bismuth titanate ferroelectric insulating layer is a second layer of the photodetector, and is spin-coated on the first layer of the gate electrode by a sol-gel method. The bismuth titanate material is a single-phase material which has multiferroic performance above normal temperature, has higher spontaneous polarization value and does not contain lead. Here with 100nm SiO2SiO on a P-type heavily doped Si substrate2Together as an insulating layer for the entire device. Of SiO alone2The insulating layer as a device does not effectively prevent current leakage from top to bottom. In SiO2The bismuth titanate layer is coated in a spinning mode, on one hand, the electrode can be effectively prevented from being contacted with the N-type silicon, and on the other hand, photogenerated carriers separated by the Schottky junction barrier layer on the bismuth titanate layer can be promoted to be transferred into an external circuit.
Spin coating on MoS with gold particles2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction is the third layer of the photoelectric detector. Firstly, single-layer graphene and MoS are deposited by a chemical vapor deposition method2Respectively growing on copper foil and 300nm SiO2On the Si substrate of (1); then MoS2MoS formation by transfer onto copper foil with single-layer graphene by polymer-mediated transfer method2A graphene vertical heterojunction; then the MoS is processed2Transferring the graphene vertical heterojunction onto the second layer; finally, the product is in MoS2A layer of gold particles is coated on the graphene vertical heterojunction in a spin mode. This layer binds to MoS2Strong light absorption capacity and ultrahigh carrier mobility of graphene, and gold particles are used for modifying MoS2The graphene heterojunction enables the surface of the graphene heterojunction to be plasma-enhanced, and light is optimizedPerformance of the electrical detector.
Pt is spin-coated on MoS by using gold particles2Plasma enhanced MoS obtained on surface of graphene heterojunction2The fourth layer and the fifth layer of the graphene photoelectric detector are provided with a conductive Pt source electrode and a conductive Pt drain electrode, and Pt is an ideal substitute for preparing a high-performance conductive film. Growing high-performance single-layer Pt by using a dual-ion beam sputtering method, patterning by using a mask plate, and spin-coating on MoS by using gold particles2Plasma enhanced MoS obtained on surface of graphene heterojunction2The Pt source electrode and the Pt drain electrode are formed on the graphene vertical heterojunction, the electrical performance of the Pt source electrode and the Pt drain electrode is higher than that of a common electrode, and the Pt source electrode and the Pt drain electrode can be better stabilized and contacted by spin coating of gold particles on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2Graphene vertical heterojunction and can effectively avoid the gold particles in MoS2The effect of plasma enhancement obtained by the graphene vertical heterojunction.
The utility model has the advantages that:
1. the utility model discloses utilize gold granule to scribble at MoS soon2Plasma enhanced MoS obtained on surface of graphene heterojunction2And the/graphene vertical heterojunction is used as a third layer of the detector. Binding to MoS2Strong light absorption capacity and ultrahigh carrier mobility of graphene, and gold particles are used for modifying MoS2The graphene heterojunction enables the surface of the graphene heterojunction to be plasma-enhanced, and the performance of the photoelectric detector is optimized.
2. The material of the gate electrode of the utility model is 100nm SiO2And an Au gate electrode is evaporated on the P-type heavily doped Si substrate. 100nm SiO2The P-type heavily doped Si substrate can be used as a carrier, and can also directly avoid the contact of an electrode and N-type Si. The Au is used as the back gate electrode, and the regulation and control capability of the gate electrode is stronger than that of directly using the P-type heavily doped Si.
3. The material of the ferroelectric insulating layer of the utility model is bismuth titanate and 100nm SiO2SiO on a P-type heavily doped Si substrate2Together as an insulating layer for the entire device. On one hand, the contact between the electrode and the N-type silicon can be more effectively avoided, and on the other hand, the contact between the electrode and the N-type silicon can be avoidedThe photogenerated carriers separated by the Schottky junction barrier on the upper layer are promoted to be transferred into an external circuit.
4. The utility model discloses a use Pt as source electrode and drain electrode, both be the ideal substitute who prepares high performance conductive film and also can effectually avoid at the MoS to the gold granule2The effect of plasma enhancement obtained by the graphene vertical heterojunction.
5. The utility model provides a high responsivity, high bright and dark electric current ratio, high carrier mobility and short response time's utilization gold granule is scribbled soon in MoS2Plasma enhanced MoS obtained on surface of graphene vertical heterojunction2A graphene detector.
Drawings
FIG. 1 is a spin coating of MoS with gold particles2Plasma enhanced MoS obtained on surface of graphene vertical heterojunction2A graphene photodetector schematic;
wherein 1-gate electrode, 2-ferroelectric insulating layer, 3-metal particles are spin-coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2A graphene vertical heterojunction, a 4-Pt source electrode and a 5-Pt drain electrode.
Detailed Description
Spin coating on MoS by using gold particles2The graphene photoelectric detector is characterized in that the structure from bottom to top is a gate electrode 1 and a ferroelectric insulating layer 2, and gold particles are coated on MoS in a spinning mode2Plasma enhanced MoS obtained on surface of graphene heterojunction2A/graphene vertical heterojunction 3, a Pt source electrode 4 and a Pt drain electrode 5.
Further, the gate electrode 1 is SiO at 100nm2And an Au gate electrode is evaporated on the P-type heavily doped Si substrate.
Further, the material of the ferroelectric insulating layer 2 is bismuth titanate.
Further, the gold particles are spin coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction 3 is a van der waals vertical heterojunction.
Further, the gold particles are spin coated on MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction 3 is modified by gold particles to obtain surface plasma enhancement.
Claims (5)
1. Spin coating on MoS by using gold particles2The graphene photoelectric detector is characterized in that the structure from bottom to top is a gate electrode (1), a ferroelectric insulating layer (2) and gold particles are coated on MoS in a spinning mode2Plasma enhanced MoS obtained on surface of graphene heterojunction2A graphene vertical heterojunction (3), a Pt source electrode (4) and a Pt drain electrode (5).
2. The method of claim 1, wherein the coating is applied to the MoS by spin coating with gold particles2Graphene photodetector, characterized in that the gate electrode (1) is SiO at 100nm2And an Au gate electrode is evaporated on the P-type heavily doped Si substrate.
3. The method of claim 1, wherein the coating is applied to the MoS by spin coating with gold particles2The graphene photoelectric detector is characterized in that the ferroelectric insulating layer (2) is made of bismuth titanate.
4. The method of claim 1, wherein the coating is applied to the MoS by spin coating with gold particles2Graphene photodetector, wherein the gold particles are spin coated on the MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction (3) is a van der Waals vertical heterojunction.
5. The method of claim 1, wherein the coating is applied to the MoS by spin coating with gold particles2Graphene photodetector, wherein the gold particles are spin coated on the MoS2Plasma enhanced MoS obtained on surface of graphene heterojunction2The/graphene vertical heterojunction (3) is used for modifying gold particles to obtain surface plasma enhancement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821864044.9U CN210182399U (en) | 2018-11-13 | 2018-11-13 | Spin coating on MoS by using gold particles2Photoelectric detector of/graphite alkene |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821864044.9U CN210182399U (en) | 2018-11-13 | 2018-11-13 | Spin coating on MoS by using gold particles2Photoelectric detector of/graphite alkene |
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| CN210182399U true CN210182399U (en) | 2020-03-24 |
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| CN201821864044.9U Expired - Fee Related CN210182399U (en) | 2018-11-13 | 2018-11-13 | Spin coating on MoS by using gold particles2Photoelectric detector of/graphite alkene |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451423A (en) * | 2021-07-27 | 2021-09-28 | 湖南大学 | Heterojunction photoelectric synapse device based on plasmon effect |
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2018
- 2018-11-13 CN CN201821864044.9U patent/CN210182399U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451423A (en) * | 2021-07-27 | 2021-09-28 | 湖南大学 | Heterojunction photoelectric synapse device based on plasmon effect |
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