CN208290636U - High thermal conductivity organic substrate - Google Patents
High thermal conductivity organic substrate Download PDFInfo
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- CN208290636U CN208290636U CN201620301112.5U CN201620301112U CN208290636U CN 208290636 U CN208290636 U CN 208290636U CN 201620301112 U CN201620301112 U CN 201620301112U CN 208290636 U CN208290636 U CN 208290636U
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- thermal conductivity
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Abstract
A kind of high thermal conductivity organic substrate, including the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually, the high thermal conductivity dielectric layer be bismaleimide-cyanate ester resin and heat filling composite layer, the high thermal conductivity dielectric layer with a thickness of 20 μm~80 μm.Above-mentioned high thermal conductivity organic substrate, not only with the attribute of common organic substrate, but also due to, as supporting layer, there is excellent heat-sinking capability, products obtained therefrom has high heating conduction, can use as the package substrate of electronic device chip using high thermal conductivity dielectric layer.
Description
Technical field
The utility model relates to a kind of high thermal conductivity organic substrates.
Background technique
With the arrival in rear mole of epoch, three-dimensional integration technology is integrated from traditional two dimension to 2.5 dimensions or more advanced three
Integrated direction is tieed up to develop.Bring heat rendezvous problem has become the matter of utmost importance for hindering three-dimensional integrated device development therewith.
According to A Leiniusi rule, electronic device temperature is every to increase 10 DEG C, and the service life can reduce half.Electronic package substrate is electronic seal
Important component in dress system.The effect of substrate is to carry, fix electronic component, is formed using its surface or inside
Circuitous pattern carries out circuit connection, while having insulation, thermally conductive isolation and the effect of protection component concurrently.Organic substrate is excellent with its
Different processing performance, low cost and excellent mechanical property has become the baseplate material of electronic device first choice.Traditional is organic
The thermal coefficient of substrate is lower than 1.0Wm mostly-1K-1, thermal coefficient is lower.
Utility model content
In consideration of it, it is necessary to provide a kind of preferable high thermal conductivity organic substrates of heating conduction.
A kind of high thermal conductivity organic substrate, including the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually,
The high thermal conductivity dielectric layer is the composite layer of bismaleimide-cyanate ester resin and heat filling, the high thermal conductivity dielectric
Layer with a thickness of 20 μm~80 μm.
First copper foil layer is electrodeposited copper foil layer or rolled copper foil layer in one of the embodiments,.
Second copper foil layer is electrodeposited copper foil layer or rolled copper foil layer in one of the embodiments,.
In one of the embodiments, first copper foil layer with a thickness of 12 μm~35 μm.
In one of the embodiments, second copper foil layer with a thickness of 12 μm~35 μm.
The high thermal conductivity dielectric layer is bismaleimide-cyanate ester resin and boron nitride in one of the embodiments,
Composite layer.
The high thermal conductivity dielectric layer is bismaleimide-cyanate ester resin and aluminium nitride in one of the embodiments,
Composite layer.
The high thermal conductivity dielectric layer is bismaleimide-cyanate ester resin and three oxidations in one of the embodiments,
The composite layer of two aluminium.
The high thermal conductivity dielectric layer is bismaleimide-cyanate ester resin and silicon carbide in one of the embodiments,
Composite layer.
Above-mentioned high thermal conductivity organic substrate, including the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually,
Not only with the attribute of common organic substrate, but also due to, as supporting layer, there is excellent heat dissipation using high thermal conductivity dielectric layer
Ability, products obtained therefrom have high heating conduction, can use as the package substrate of electronic device chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the high thermal conductivity organic substrate of an embodiment.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to be more clear the purpose of this utility model, technical solution and advantage
The utility model is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain this reality
With novel, it is not used to limit the utility model.
Referring to Fig. 1, the high thermal conductivity organic substrate 100 of an embodiment, including the first copper foil layer 10, the height stacked gradually
Thermally conductive dielectric layer 20 and the second copper foil layer 30.
First copper foil layer 10 with a thickness of 12 μm~35 μm.First copper foil layer 10 is electrodeposited copper foil layer or rolled copper foil layer.
High thermal conductivity dielectric layer 20 with a thickness of 20 μm~80 μm.The thermal coefficient of high thermal conductivity dielectric layer 20 is 0.5Wm-1K-1
~3Wm-1K-1.High thermal conductivity dielectric layer 20 is the composite layer of bismaleimide-cyanate ester resin and heat filling.
Heat filling is boron nitride, aluminium nitride, aluminum oxide or silicon carbide.That is, high thermal conductivity dielectric layer 20 can be double
The composite layer of maleimide-cyanate ester resin and boron nitride, bismaleimide-cyanate ester resin and aluminium nitride it is compound
Nitride layer, the composite layer of bismaleimide-cyanate ester resin and aluminum oxide or bismaleimide-cyanate ester resin and
The composite layer of silicon carbide.
Second copper foil layer 30 with a thickness of 12 μm~35 μm.Second copper foil layer 30 is electrodeposited copper foil layer or rolled copper foil layer.
Above-mentioned high thermal conductivity organic substrate 100 the production method is as follows:
S10, bismaleimide-cyanate ester resin and heat filling are dispersed in organic solvent to form liquid dispersion
The liquid dispersion is then coated in a surface of copper foil using coating equipment, forms height on a surface of copper foil by body
Thermally conductive dielectric layer.
S20, the above-mentioned copper foil coated with high thermal conductivity dielectric layer is put into drying box, is heated 5 minutes at 80 DEG C~200 DEG C
It~30 minutes, removes organic solvent and makes the quick semi-solid preparation of high thermal conductivity dielectric layer.
S30, at 150 DEG C~200 DEG C, by two surfaces be coated with high thermal conductivity dielectric layer copper foil high thermal conductivity dielectric layer
Stacking contact pressing, and solidify after it is carried out at 150 DEG C~250 DEG C, obtain high thermal conductivity organic substrate 100.
Above-mentioned high thermal conductivity organic substrate, including the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually,
Not only with the attribute of common organic substrate, but also due to, as supporting layer, there is excellent heat dissipation using high thermal conductivity dielectric layer
Ability, products obtained therefrom have high heating conduction, can use as the package substrate of electronic device chip.
It is below specific embodiment part.
Embodiment 1
A kind of high thermal conductivity organic substrate includes the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually.
Wherein high thermal conductivity medium thickness is 20 μm, and thermal coefficient is 3W m-1K-1.High thermal conductivity dielectric layer is bismaleimide-cyanic acid
The composite layer of ester resin and aluminium nitride.First copper foil layer and the second copper foil layer are electrodeposited copper foil layer, the first copper foil layer and second
The thickness of copper foil layer is 12 μm.
Embodiment 2
A kind of high thermal conductivity organic substrate includes the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually.
Wherein high thermal conductivity medium thickness is 80 μm, and thermal coefficient is 0.5W m-1K-1.High thermal conductivity dielectric layer is bismaleimide-cyanogen
The composite layer of acid ester resin and boron nitride.First copper foil layer and the second copper foil layer are rolled copper foil, the first copper foil layer and second
The thickness of copper foil layer is 35 μm.
Embodiment 3
A kind of high thermal conductivity organic substrate includes the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually.
Wherein high thermal conductivity medium thickness is 33 μm, and thermal coefficient is 1.0W m-1K-1.High thermal conductivity dielectric layer is bismaleimide-cyanogen
The composite layer of acid ester resin and aluminum oxide.First copper foil layer and the second copper foil layer are electrolytic copper foil, the first copper foil layer and
The thickness of second copper foil layer is 35 μm.
Embodiment 4
A kind of high thermal conductivity organic substrate includes the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually.
Wherein high thermal conductivity medium thickness is 50 μm, and thermal coefficient is 2.0W m-1K-1.High thermal conductivity dielectric layer is bismaleimide-cyanogen
The composite layer of acid ester resin and boron nitride.First copper foil layer and the second copper foil layer are rolled copper foil, the first copper foil layer and second
The thickness of copper foil layer is 18 μm.
Embodiment 5
A kind of high thermal conductivity organic substrate includes the first copper foil layer, high thermal conductivity dielectric layer and the second copper foil layer stacked gradually.
Wherein high thermal conductivity medium thickness is 35 μm, and thermal coefficient is 2.5W m-1K-1.High thermal conductivity dielectric layer is bismaleimide-cyanogen
The composite layer of acid ester resin and silicon carbide.First copper foil layer and the second copper foil layer are electrolytic copper foil, the first copper foil layer and second
The thickness of copper foil layer is 18 μm.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (7)
1. a kind of high thermal conductivity organic substrate, which is characterized in that including the first copper foil layer, the high thermal conductivity dielectric layer and stacked gradually
Two copper foil layers, the high thermal conductivity dielectric layer are the composite layer of bismaleimide-cyanate ester resin and heat filling, the height
Thermally conductive dielectric layer with a thickness of 20 μm~80 μm, first copper foil layer with a thickness of 12 μm~35 μm, second copper foil layer
With a thickness of 12 μm~35 μm.
2. high thermal conductivity organic substrate as described in claim 1, which is characterized in that first copper foil layer be electrodeposited copper foil layer or
Rolled copper foil layer.
3. high thermal conductivity organic substrate as described in claim 1, which is characterized in that second copper foil layer be electrodeposited copper foil layer or
Rolled copper foil layer.
4. high thermal conductivity organic substrate as described in claim 1, which is characterized in that the high thermal conductivity dielectric layer is bismaleimide
The composite layer of amine-cyanate ester resin and boron nitride.
5. high thermal conductivity organic substrate as described in claim 1, which is characterized in that the high thermal conductivity dielectric layer is bismaleimide
The composite layer of amine-cyanate ester resin and aluminium nitride.
6. high thermal conductivity organic substrate as described in claim 1, which is characterized in that the high thermal conductivity dielectric layer is bismaleimide
The composite layer of amine-cyanate ester resin and aluminum oxide.
7. high thermal conductivity organic substrate as described in claim 1, which is characterized in that the high thermal conductivity dielectric layer is bismaleimide
The composite layer of amine-cyanate ester resin and silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620301112.5U CN208290636U (en) | 2016-04-12 | 2016-04-12 | High thermal conductivity organic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620301112.5U CN208290636U (en) | 2016-04-12 | 2016-04-12 | High thermal conductivity organic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208290636U true CN208290636U (en) | 2018-12-28 |
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ID=64696190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620301112.5U Active CN208290636U (en) | 2016-04-12 | 2016-04-12 | High thermal conductivity organic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208290636U (en) |
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2016
- 2016-04-12 CN CN201620301112.5U patent/CN208290636U/en active Active
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