CN208268801U - A kind of high light-emitting rate ultraviolet LED lighting device - Google Patents
A kind of high light-emitting rate ultraviolet LED lighting device Download PDFInfo
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- CN208268801U CN208268801U CN201820566133.9U CN201820566133U CN208268801U CN 208268801 U CN208268801 U CN 208268801U CN 201820566133 U CN201820566133 U CN 201820566133U CN 208268801 U CN208268801 U CN 208268801U
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Abstract
The utility model relates to ultraviolet LED lighting technical fields, disclose a kind of high light-emitting rate ultraviolet LED lighting device, it include: transparent insulation substrate, the multiple LED wafers being set in transparent insulation substrate, each LED wafer is integrally in bowl structure, bottom end of the diameter of the medial surface of LED wafer in the horizontal direction from the top of LED wafer to LED wafer is sequentially reduced, bottom end of the diameter of the lateral surface of LED wafer in the horizontal direction from the top of LED wafer to LED wafer is sequentially increased, the top of LED wafer covers light transmission hollow housing, the lower end of light transmission hollow housing and the lateral surface of LED wafer post and fix in transparent insulation substrate to form enclosure space, heat-sink unit is set in transparent insulation substrate and is located at below LED wafer, the upper surface of heat-sink unit and L The outer bottom face contact of ED chip, the lower end surface of heat-sink unit are flushed with the bottom surface of transparent insulation substrate.Above-mentioned lighting device, to light optically focused while shining, effectively improves light emission rate by the way that LED wafer is designed as bowl structure.
Description
Technical field
The utility model relates to ultraviolet LED technical field of lighting devices more particularly to a kind of high light-emitting rate ultraviolet LED to illuminate
Device.
Background technique
Light emitting diode (Light Emitting Diode, abbreviation LED), in daily life and industrial use now
More and more extensive, luminescence response low in energy consumption with its is fast, high reliablity, radiation efficiency are high, service life length, no pollution to the environment, structure
Many advantages, such as compact, obtains a large amount of market share, is a kind of environmentally protective light source of great prospect, is acknowledged as 21 generation
One of high-tech product most with prospects of recording also is current energy-saving and emission-reduction, environmental protection while causing illumination revolution
Make major contribution.
Currently, LED lamp has been widely used in the normal lighting of people.Since LED light source is a kind of 180 degree angle
The light source of light out, in LED lamp, it is necessary to according to different applications and demand, using lens to the light intensity point of LED light source
Cloth is changed.In existing lamps and lanterns, in order to reach good light distribution effect, secondary optical lens are mostly used greatly.Existing LED light
Tool, existing transmissive interface is more between secondary lens and luminescence chip, on the route that light goes out light, because of interface total reflection phenomenon
Caused by light loss it is relatively more, cause the light emission rate of LED light low, influence its using effect.In addition, can be in order to improve light emission rate
Reflector is arranged in the outside of LED wafer, however the fixation position of meeting reflector, which is used for a long time, to change, and lead to light guide
Direction shift, thus invalid effectively reflection with focus light guide, therefore, how stable raising LED light device
Light emission rate be the technical issues that need to address.
Utility model content
In order to solve above-mentioned technological deficiency of the existing technology, the purpose of this utility model is to provide one kind can be steady
Surely the ultraviolet LED lighting device of LED light device light emission rate is improved, it is bowl-shape by the way that the LED wafer in lighting device to be designed as
Structure makes chip carry out optically focused and guiding to emergent ray while emitting beam, concentrates emergent ray more, light loss
Reduce, to effectively improve the light emission rate of LED light device.
In order to achieve the above objectives, the embodiments of the present invention adopt the following technical scheme that
A kind of high light-emitting rate ultraviolet LED lighting device, the lighting device include: transparent insulation substrate, are set to transparent exhausted
Multiple LED wafers on edge substrate, each LED wafer be integrally in bowl structure, and the medial surface of LED wafer is in the horizontal direction
Bottom end of the diameter from the top of LED wafer to LED wafer is sequentially reduced, the diameter of the lateral surface of LED wafer in the horizontal direction
Bottom end from the top of LED wafer to LED wafer is sequentially increased, and the top of LED wafer covers light transmission hollow housing, and light transmission is hollow
The lower end of shell and the lateral surface of LED wafer post and fix in transparent insulation substrate to form enclosure space, heat-sink unit
It is set in transparent insulation substrate and is located at below LED wafer, the upper surface of heat-sink unit and the outer bottom face contact of LED wafer,
The lower end surface of heat-sink unit is flushed with the bottom surface of transparent insulation substrate.
Above-mentioned ultraviolet LED lighting device designs the LED wafer in lighting device compared to existing LED light device
By bowl structure to replace existing reflector, chip is made to carry out optically focused and guiding to emergent ray while emitting beam,
Concentrate emergent ray more, light loss reduces.Simultaneously as LED wafer avoids reflector long-term instead of reflector
Position is fixed after use to shift and the direction of light guide is caused to change, and effectively improves LED illumination dress to stablize
The light emission rate set improves the illuminating effect of LED light device, improves user experience.
Further, along the direction of the bottom end from the top of LED wafer to LED wafer, the medial surface of LED wafer is most
Lower curtate is formed with inner bottom surface, and inner bottom surface is parallel with the outer bottom of LED wafer.
Further, the height of LED wafer is 0.3-1.0mm, and the diameter of the inner bottom surface of LED wafer is 1.5-3.0mm, interior
The angle of side and transparent insulation substrate is 30 ° -120 °.
Further, the lateral surface of LED wafer is identical as the lower end profile of light transmission hollow housing, light transmission hollow housing it is upper
End is any one of spherical, circle or arc.
Further, the medial surface of LED wafer is rough surface, and array is provided with multiple convex reflections on the rough surface
Point.
Further, the shape of convex reflection point be taper, hemispherical or it is trapezoidal in any one.
Further, the height of tapered protrusion shape reflection point is 0.1-0.3mm, and the rib angle of tapered protrusion shape reflection point is
30°-120°；The shape of hemispherical projections shape reflection point is hemispherical or circle, and the diameter of hemispherical projections shape reflection point is
0.1-0.3mm。
Further, the first reflectance coating is coated on the outside of light transmission hollow housing.
Further, Wavelength conversion film is coated between light transmission hollow housing and the first reflectance coating.
Further, heat-sink unit includes electrothermal module or sheet metal.
Compared with the prior art, the utility model has the following technical effect that:
High light-emitting rate ultraviolet LED lighting device provided by the utility model, comprising: transparent insulation substrate is set to transparent
Multiple LED wafers on insulating substrate, LED wafer are integrally in bowl structure, the medial surface of LED wafer in the horizontal direction straight
Bottom end of the diameter from the top of LED wafer to LED wafer is sequentially reduced, the diameter of the lateral surface of LED wafer in the horizontal direction from
The bottom end of the top of LED wafer to LED wafer is sequentially increased, and the top of LED wafer covers light transmission hollow housing, light transmission hollow shell
The lower end of body and the lateral surface of LED wafer are posted and fixed in, to form enclosure space, heat-sink unit is set in transparent insulation substrate
It is placed in transparent insulation substrate and is located at below LED wafer, the upper surface of heat-sink unit and the outer bottom face contact of LED wafer dissipate
The lower end surface of hot cell is flushed with the bottom surface of transparent insulation substrate.Above-mentioned LED light device passes through the LED in lighting device is brilliant
Piece be designed as bowl structure with replace existing reflector, make chip while emitting beam to emergent ray carry out optically focused with
Guiding, concentrates emergent ray more, and light loss reduces.Simultaneously as LED wafer replaces reflector, avoids reflector and exist
Position is fixed after long-time service to shift and the direction of light guide is caused to change, and effectively reflects and focuses out light light
Line improves the illuminating effect of LED light device to stablize the light emission rate for improving LED light device, improves user experience.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of main view of high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
Fig. 2 is a kind of top view of high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
Fig. 3 is a kind of left view of high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
Fig. 4 is the main view of another high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
Fig. 5 is the left view of another high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
Fig. 6 is the left view of another high light-emitting rate ultraviolet LED lighting device provided by the embodiment of the utility model；
The partial structural diagram of LED wafer provided by the embodiment of the utility model；
Wherein: 1, LED light device；2, transparent insulation substrate；3, LED wafer；31, elargol or eutectic solder；32, conductive
Lead；33, polarity pin；4, light transmission hollow housing；5, heat-sink unit；6, convex reflection point；7, the first reflectance coating；8, wavelength
Convert film
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.
In addition, the terms "and/or", only a kind of incidence relation for describing affiliated partner, indicates may exist
Three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three situations of individualism B.Separately
Outside, character "/" herein typicallys represent the relationship that forward-backward correlation object is a kind of "or".
As shown in Figure 1-3, the utility model embodiment provides a kind of high light-emitting rate ultraviolet LED lighting device 1, the illumination
Device includes: transparent insulation substrate 2, the multiple LED wafers 3 being set in transparent insulation substrate 2, and each LED wafer 3 is whole to be in
Bowl structure, bottom end of the diameter of the medial surface of LED wafer in the horizontal direction from the top of LED wafer to LED wafer is successively
Reducing, bottom end of the diameter of the lateral surface of LED wafer in the horizontal direction from the top of LED wafer to LED wafer is sequentially increased,
The top of LED wafer covers light transmission hollow housing, and the lower end of light transmission hollow housing 4 and the lateral surface of LED wafer post and fix
In, to form enclosure space, heat-sink unit 5 is set in transparent insulation substrate and is located under LED wafer in transparent insulation substrate
Side, the upper surface of heat-sink unit and the outer bottom face contact of LED wafer, the lower end surface of heat-sink unit and the bottom surface of transparent insulation substrate
It flushes.
The material of transparent insulation substrate 2 includes glass, sapphire, ceramics, copper-based, any one or more in aluminium base.
Wherein, the high thermal conductive substrates material such as ceramic (HTCC or AlN), aluminium base, copper-based is generally used for powerful ultraviolet LED illumination dress
It sets；The substrate materials such as glass, sapphire, be generally used in, low power ultraviolet LED lighting device, such substrate requires purple light
Section light transmittance is greater than 90% or more.
Preferably, for the thickness of transparent insulation substrate 2 between 0.1~0.3mm, shape can be rectangle or pros
The length and width size of shape, transparent insulation substrate 2 requires to adjust according to the photoelectric parameter of specific ultraviolet LED lighting device.
It is in bowl structure that LED wafer 3 is whole, and outer bottom is the plane where the bottom of LED wafer and rounded, and connection is outer
Bottom surface outermost circle and top circular are lateral surfaces, the diameter of lateral surface in the horizontal direction from the top of LED wafer to
The bottom end of LED wafer is sequentially increased, and connect inner bottom surface outermost circle and top circular is medial surface, and medial surface is in level side
Bottom end of the upward diameter from the top of LED wafer to LED wafer is sequentially reduced, and inner bottom surface is where medial surface lowest part is round
Plane.The height of LED wafer is the vertical projection height of the bottom end from the top of LED wafer to LED wafer.Compared to existing
Ultraviolet LED lighting device in reflecting cup structure, LED wafer can not only shine, also have both the function of reflector, make LED
Chip changes the light-emitting angle of LED wafer emergent light and light direction while emitting beam, and gathers to emergent ray
Light and guiding, concentrate emergent ray more, and light loss reduces, and light intensity increases, and then improve optical energy utilization efficiency.Together
When, since LED wafer replaces reflector, avoiding reflector, fixed position shifts and leads to light light out after long-term use
The direction of line changes, and effectively reflection improves with focusing light guide to stablize the light emission rate for improving LED light device
The illuminating effect of LED light device improves user experience.
Preferably, along the direction of the bottom end from the top of LED wafer 3 to LED wafer, the medial surface of LED wafer is most
Lower curtate is formed with inner bottom surface, and the plane where inner bottom surface is parallel with the plane where the outer bottom of LED wafer.
Preferably, the height of LED wafer 3 is 0.3-1.0mm, and the diameter of the inner bottom surface of LED wafer is 1.5-3.0mm, interior
The angle of side and transparent insulation substrate is 30 ° -120 °.
Preferably, LED wafer 3 is ultraviolet light of the launch wavelength in 190~400nm range.
Further, LED wafer 3 is fixed on generally in the form of array arrangement by elargol or eutectic solder 31 transparent exhausted
On edge substrate 2.It needs that the front and back sides of substrate are carried out covering copper, cabling before fixed wafer 3 in transparent insulation substrate 2, makes phase
Required electrical connection is formed between adjacent LED wafer 3 by conductive lead wire 32.
LED wafer 3 is fixed in transparent insulation substrate 2, the outer bottom of LED wafer is solid by elargol or eutectic solder 31
Determine on a substrate 2, and circuit connection is formed by conductive lead wire 32, the quantity of LED wafer 12 is 1~20, between LED wafer
It can connect, it can also be in parallel.
Preferably, conductive lead wire 32 is connected on electrode of substrate by way of laser pressure welding.Conductive lead wire 32 can be
Bilateral outlet is also possible to unilateral outlet, can be adjusted according to circuit design.
Preferably, the material of conductive lead wire 32 is thermally conductive, electric conductivity is excellent and surface can be with the metal of plated film or conjunction
Golden material, to prevent the irradiation of ultraviolet light.
Preferably, the material of conductive lead wire 32 includes copper, aluminium etc..
Preferably, polarity pin 33 and the polarity pad at basic both ends are welded and fixed.Polarity pin 33 is according to using
Occasion is adjusted, and be can be unilateral extraction positive and negative anodes, is also possible to two sides and draws positive and negative anodes.
Light transmission hollow housing 4 is hollow housing open at one end, is set to the top of LED.Its length is less than or equal to base
The length of plate 2, width are less than or equal to the width of substrate 2, are highly greater than the height of substrate 2, so that entire light transmission hollow housing 4
On substrate 2.The lower end of light transmission hollow housing 4 and the lateral surface of LED wafer 3 post and fix in transparent insulation substrate with
Form enclosure space.
Preferably, the lower end of light transmission hollow housing 4 and the lateral surface of LED wafer are identical as profile, light transmission hollow housing 4
Upper end is any one in cabinet shape, cylinder, spherical shape or hemispherical.
The material of light transmission hollow housing 4 is made of the solid-state material with light transmission and heating conduction, using sapphire or glass
The transparent solid-state material layer of the high transparency such as glass layer and heatproof.It is empty that heat dissipation is formed between light transmission hollow housing 4 and multiple LED wafers
Chamber forms good heat dissipation channel on the periphery of LED wafer, reduces comprehensive thermal resistance, to facilitate LED wafer central part
The export for dividing heat, improves light emission rate, and the service life of low color temperature LED light emitting device can be substantially improved.
Heat-sink unit 5 is set in transparent insulation substrate 2 and is located at the lower section of LED wafer 3, the upper surface of heat-sink unit with
The outer bottom face contact of LED wafer, the lower end surface of heat-sink unit are flushed with the bottom surface of transparent insulation substrate.Pass through heat-sink unit 5
Setting further improves the heat dissipation performance of illuminating source LED wafer, and the heat dissipation effect of heat-sink unit can be such that power greatly improves,
To reach the lighting source of the high brightness low cost in ideal, and then improve light emission rate and illumination effect.
Preferably, heat-sink unit includes electrothermal module or sheet metal.
It can be in LED wafer by setting heat-sink unit and heat dissipation cavity compared to existing ultraviolet LED lighting device
Periphery form good heat dissipation channel, effectively export the heat of LED wafer central part, heat dissipation effect can be such that power mentions significantly
Height to reach the lighting source of the high brightness low cost in ideal, and then improves light emission rate and illumination effect, and substantially mention
Rise the service life of low color temperature LED light emitting device.
As illustrated in figures 4-5, on the basis of the above embodiments, in another embodiment of the utility model, LED wafer 3
Medial surface be rough surface, array is provided with multiple convex reflection points 6 and passes through compared to smooth inner surface on rough surface
By the surface roughening of LED wafer, transmissivity can be increased, the light for meeting total reflection law is changed into direction, to substantially mention
The light emission rate of high emergent light.
Preferably, the shape of convex reflection point 6 be taper, hemispherical or it is trapezoidal in any one.
Preferably, the height of tapered protrusion shape reflection point is 0.1-0.3mm, and the rib angle of tapered protrusion shape reflection point is
30°-120°；The shape of hemispherical projections shape reflection point is hemispherical or circle, and the diameter of hemispherical projections shape reflection point is
0.1-0.3mm。
As shown in fig. 6, on the basis of the above embodiments, light transmission hollow housing in another embodiment of the utility model
Outside be coated with the first reflectance coating 7, first reflectance coating 7 is using reflex by the light-emitting angle of LED emergent light and light side out
To change, concentrate emergent light more, light loss is smaller, and light intensity increases, and then improves optical energy utilization efficiency.
Preferably, the material of the first reflectance coating 7 is any one of gold, silver or aluminium.
Further, it is coated with Wavelength conversion film 8 between light transmission hollow housing and the first reflectance coating 7, Wavelength conversion film passes through
Phosphor particle is dispersed in organic transparent medium and is formed.Wherein organic transparent medium is silicone resin, epoxy resin, acrylic acid
Resin or polyurethane resin, phosphor particle can according to need to be selected from the prior art.
Phosphor particle is dispersed in influence of the optium concentration by following factor in resin etc.: the mother used of such as resin
Type, the viscosity of raw material, grain shape, the particle size of phosphor particle and particle size distribution of body etc..This field
Technical staff can be according to use condition or the concentration of other factors selection phosphor particle, such as usually 3~20wt%.For
Control has the distribution of the phosphor particle of high dispersibility, and the phosphor particle preferably has average of 0.1 to 5 μm
Particle size.As illustratively, in order to improve fluorescence coating heat resistance and discoloration-resistant performance, use in the present invention
Following phosphor particle resin combination is formed by curing fluorescence coating.
Further, in order to improve and enhance the reflection of the material comprising phosphor particle, diffusing reflection effect and
In order to improve heat dissipation effect, non-fluorescent material, such as metallic particles, glass are also contained in the material containing light powder
Grain or ceramic particle etc..
To sum up, high light-emitting rate ultraviolet LED lighting device provided by the utility model, comprising: transparent insulation substrate is set to
Multiple LED wafers in transparent insulation substrate, LED wafer are integrally in bowl structure, and the medial surface of LED wafer is in the horizontal direction
Bottom end of the diameter from the top of LED wafer to LED wafer be sequentially reduced, the lateral surface of LED wafer in the horizontal direction straight
Bottom end of the diameter from the top of LED wafer to LED wafer is sequentially increased, the top covering light transmission hollow housing of LED wafer, in light transmission
The lower end of empty capsid and the lateral surface of LED wafer are posted and fixed in, to form enclosure space, heat dissipation is single in transparent insulation substrate
Member is set in transparent insulation substrate and is located at below LED wafer, and the upper surface of heat-sink unit and the outer bottom of LED wafer connect
Touching, the lower end surface of heat-sink unit is flushed with the bottom surface of transparent insulation substrate.Above-mentioned LED light device is by designing LED wafer
Concavo-convex rough surface is set for bowl structure and on LED wafer surface, makes LED wafer surface roughening, effectively increases transmissivity,
The light for meeting total reflection law is changed into direction, greatly improves light extraction efficiency.
In addition, heat-sink unit is arranged in the bottom of LED wafer, it can be effectively reduced comprehensive thermal resistance and export in LED wafer
The heat of center portion point, is substantially improved the service life of low color temperature LED light emitting device.
To sum up, high light-emitting rate ultraviolet LED lighting device provided by the utility model, comprising: transparent insulation substrate is set to
Multiple LED wafers in transparent insulation substrate, LED wafer are integrally in bowl structure, and the medial surface of LED wafer is in the horizontal direction
Bottom end of the diameter from the top of LED wafer to LED wafer be sequentially reduced, the lateral surface of LED wafer in the horizontal direction straight
Bottom end of the diameter from the top of LED wafer to LED wafer is sequentially increased, the top covering light transmission hollow housing of LED wafer, in light transmission
The lower end of empty capsid and the lateral surface of LED wafer are posted and fixed in, to form enclosure space, heat dissipation is single in transparent insulation substrate
Member is set in transparent insulation substrate and is located at below LED wafer, and the upper surface of heat-sink unit and the outer bottom of LED wafer connect
Touching, the lower end surface of heat-sink unit is flushed with the bottom surface of transparent insulation substrate.Above-mentioned LED light device is by will be in lighting device
LED wafer is designed as bowl structure to replace existing reflector, carries out chip while emitting beam to emergent ray
Optically focused and guiding, concentrate emergent ray more, and light loss reduces.Simultaneously as LED wafer replaces reflector, avoid anti-
Light cup fixes position after long-term use and shifts and the direction of light guide is caused to change, and effectively reflects and focuses out
Light light improves the illuminating effect of LED light device to stablize the light emission rate for improving LED light device, improves user experience
Sense.
In addition, LED wafer surface roughening can effectively increase transmissivity, the light change side of total reflection law will be met
To greatly improving light extraction efficiency；Heat-sink unit is set in the bottom of LED wafer, can be effectively reduced comprehensive thermal resistance and export LED
The service life of low color temperature LED light emitting device is substantially improved in the heat of center wafer part.
Through the above description of the embodiments, it is apparent to those skilled in the art that, for description
It is convenienct and succinct, only with the division progress of above-mentioned each functional unit for example, in practical application, can according to need and will be upper
It states function distribution to be completed by different functional units, i.e., the internal structure of device is divided into different functional units, to complete
All or part of function described above.The specific work process of the system, apparatus, and unit of foregoing description, before can referring to
The corresponding process in embodiment of the method is stated, details are not described herein.
Above description is only a specific implementation of the present invention, but the protection scope of the utility model is not limited to
In this, anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in variation
Or replacement, it should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should be with the power
Subject to the protection scope that benefit requires.
Claims (10)
1. a kind of high light-emitting rate ultraviolet LED lighting device, which is characterized in that the lighting device includes: transparent insulation substrate, if
The multiple LED wafers being placed in the transparent insulation substrate, the LED wafer are integrally in bowl structure, the LED wafer it is interior
The diameter of side in the horizontal direction is sequentially reduced from the top of the LED wafer to the bottom end of the LED wafer, the LED
The diameter of the lateral surface of chip in the horizontal direction is sequentially increased from the top of the LED wafer to the bottom end of the LED wafer,
The top of the LED wafer covers light transmission hollow housing, the lower end of the light transmission hollow housing and the lateral surface of the LED wafer
It posts and fixes in, to form enclosure space, heat-sink unit is set in the transparent insulation substrate in the transparent insulation substrate
And it is located at below the LED wafer, the outer bottom face contact of the upper surface of the heat-sink unit and the LED wafer, the heat dissipation
The lower end surface of unit is flushed with the bottom surface of the transparent insulation substrate.
2. ultraviolet LED lighting device as described in claim 1, which is characterized in that along from the top of the LED wafer to institute
The direction of the bottom end of LED wafer is stated, the lowest part of the medial surface of the LED wafer is formed with inner bottom surface, the inner bottom surface and institute
The outer bottom for stating LED wafer is parallel.
3. ultraviolet LED lighting device as claimed in claim 2, which is characterized in that the height of the LED wafer is 0.3-
1.0mm, the diameter of the inner bottom surface of the LED wafer are 1.5-3.0mm, the medial surface of the LED wafer and the transparent insulation
The angle of substrate is 30 ° -120 °.
4. ultraviolet LED lighting device as described in claim 1, which is characterized in that the lateral surface of the LED wafer and described
The lower end profile of light hollow housing is identical, and the upper end of the light transmission hollow housing is any one of spherical, circle or arc.
5. ultraviolet LED lighting device as described in claim 1, which is characterized in that the medial surface of the LED wafer is coarse
Face, array is provided with multiple convex reflection points on the rough surface.
6. ultraviolet LED lighting device as claimed in claim 5, which is characterized in that the shape of the convex reflection point is cone
Shape, hemispherical or it is trapezoidal in any one.
7. ultraviolet LED lighting device as claimed in claim 6, which is characterized in that the height of the tapered protrusion shape reflection point
For 0.1-0.3mm, the rib angle of the tapered protrusion shape reflection point is 30 ° -120 °；The shape of the hemispherical projections shape reflection point
Shape is hemispherical or circle, and the diameter of the hemispherical projections shape reflection point is 0.1-0.3mm.
8. ultraviolet LED lighting device as described in claim 1, which is characterized in that be coated on the outside of the light transmission hollow housing
First reflectance coating.
9. ultraviolet LED lighting device as claimed in claim 8, which is characterized in that the light transmission hollow housing and described first
Wavelength conversion film is coated between reflectance coating.
10. ultraviolet LED lighting device as described in claim 1, which is characterized in that the heat-sink unit include electrothermal module or
Person's sheet metal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820566133.9U CN208268801U (en) | 2018-04-20 | 2018-04-20 | A kind of high light-emitting rate ultraviolet LED lighting device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820566133.9U CN208268801U (en) | 2018-04-20 | 2018-04-20 | A kind of high light-emitting rate ultraviolet LED lighting device |
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| CN208268801U true CN208268801U (en) | 2018-12-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108413264A (en) * | 2018-04-20 | 2018-08-17 | 江苏鸿利国泽光电科技有限公司 | A kind of high light-emitting rate ultraviolet LED lighting device |
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2018
- 2018-04-20 CN CN201820566133.9U patent/CN208268801U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108413264A (en) * | 2018-04-20 | 2018-08-17 | 江苏鸿利国泽光电科技有限公司 | A kind of high light-emitting rate ultraviolet LED lighting device |
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