CN208189532U - Equipment for Heating Processing - Google Patents

Abstract

The utility model provides a kind of Equipment for Heating Processing for being heat-treated to substrate, the equipment includes the uniform microwave field generator for generating the uniform microwave field that frequency range is 1GHz to 24GHz, between be divided into 1 millimeter to 4 millimeters or 6 millimeters to 9 millimeters of the capacitor board and rotating device mixed with impurity, rotating device is configured to rotate the capacitor board and the substrate in the uniform microwave field, thus cause the polar periodically-varied of the microwave for being applied in the substrate from the uniform microwave field, Foucault current in the uniform microwave field reacts to the polar periodically-varied and flowing perpendicular to the plate, the substrate is evenly heated to provide.

Description

Equipment for Heating Processing

Technical field

This application involves semiconductor technology more particularly to a kind of Equipments for Heating Processing for semiconductor fabrication process.

Background technique

Progress of the semiconductor device in terms of miniaturization processes is so that the performance of electronic device becomes more preferable and storage capacity Increase.The manufacture of semiconductor device is related to many processing steps, and one of step is the doping to semiconductor substrate to be formed Source/drain junctions.Ion implantation generally can be used by will repair in specific dopant impurity implanted semiconductor wafer surface Change the electrical characteristics of semiconductor substrate.Common dopant is boron, arsenic and phosphorus.Using ion implantation, need to retreat Fire processing is implanted the related damage in region to complete activation and reparation.Depending on implant dosage (in implant surface Atomic weight) and implantation energy (depth that atom enters surface), various heat treatment technics can be used.For example, it is heat-treated skill Art may include furnace processing, rapid thermal treatment, Millisecond annealing and the various other forms comprising laser annealing.

In solid-state device industry, someone, which had tested, carries out this heat treatment process using microwave heating, but microwave adds There are many disadvantages for the use of heat.Specifically, it for microwave heating, is heated or is handled using multimode reaction chamber and is more micro- than used The relatively longer target substrate of the wavelength of wave.In multimode room, microwave energy is coupled by mode excitation with keyholed back plate part microwave field, Also referred to as electric field.Electric field can also be influenced by the dielectric properties of the target substrate heated in multimode chamber interior.If target substrate By having appropriate dielectric material to be made, microwave will flow to the target substrate with higher concentration.Electromagnetic attributes based on microwave With the kelvin effect of the indoor target substrate of multimode, target substrate can be formed and be passed through from it or on its surface based on its electric conductivity On electric current.

Regrettably, may be difficult that electric field concentration is monitored and controlled in actual operation.For example, if electric field concentration It is sufficiently strong, it will lead to undesirable thermal runaway and react unrelated electric arc with micro-wave dielectric, this, which will lead to, reacts multimode The heating of indoor target substrate is uneven, and can generate potential damage.In the prior art, attempt to using blender and Swivel plate come so that electric field more evenly, and the target substrate being also directed to using metal foil layer in heating locally changes field energy Amount.However, each in these methods all suffers from the challenge for handling Foucault current, how to avoid Foucault current generation, How to minimize Foucault current and how to eliminate Foucault current, to avoid the non-uniform heat flux due to caused by Foucault current.

The another method for heating target substrate is most commonly used together in conjunction with radio frequency using parallel-plate reactor, Certainly, this is primarily due to the technical restriction under upper frequency.Therefore, independent flat andante reactor is generally limited in radio frequency band Frequency, and cause limited response in target substrate because of wavelength used.Radio frequency heating in the prior art only conduct Bulk heater introduces solid-state market, in terms of heating and without practical poor compared with other conventional heating methods such as infrared ray Not.

Utility model content

The embodiments of the present invention are mentioned above to solve using a kind of microwave-assisted parallel-plate electric field applicator Furthermore problem can also be obviously improved semiconductor material annealing technology.Specifically, the embodiments of the present invention can provide one kind The Equipment for Heating Processing that the target substrates such as semiconductor are heat-treated using industrial microwave heating and parallel-plate reaction.

In some embodiments of the utility model, Equipment for Heating Processing may include uniform microwave field generator, closer to each other And/or fixed two plates in parallel, and it is coupled in uniform microwave field the rotating device of the two plates and target substrate.? Even microwave field generator can produce the uniform microwave field that frequency range is 1GHz to 24GHz, and two plates can be in uniform microwave Certain distance is kept in field generator each other.Specifically, plate can be separated by enough to close so that in plate in uniform microwave field Between form capacity effect.Rotation can be such that plate and target substrate rotates in uniform microwave field, apply so as to cause from uniform microwave field It is added on the polar periodically-varied of the microwave of target substrate, so that Foucault current is flowed perpendicular to plate and target substrate.

In another embodiment of the utility model, comprising being doped to parallel-plate and then will be by semiconductor material Manufactured target substrate is placed between parallel-plate in uniform microwave field.The doping can be enough to make parallel-plate to uniform microwave field It reacts, and parallel-plate can be sufficiently spaced-apart closely so that forming capacity effect between plate in uniform microwave field.Target substrate It may include the semiconductor material doped with impurity.Uniform microwave field may include the frequency in 900MHz to 26GHz range, or The frequency in frequency or 1GHz to 20GHz range in 950MHz to 25GHz range.Then, this method may include following step It is rapid: to rotate parallel-plate and target substrate in uniform microwave field, thus cause to be applied in target from uniform microwave field The polar periodically-varied of the microwave of substrate.The periodically-varied can provide relative to the Foucault of target substrate and parallel-plate electricity The perpendicular flow of stream, to provide the defects of being evenly heated and selectively heating target substrate to target substrate.

Another embodiment of the utility model provides a kind of next half-and-half using industrial microwave heating and parallel-plate reaction The equipment that the target substrates such as conductor are heat-treated.Using uniform microwave field, by by the target substrate be positioned at parallel-plate it Between control application of the Foucault current to the target substrate.The equipment may include uniform microwave field generator, support component, each other Fixed two plates and rotating device in parallel, the rotating device are configured to keep two plates and the target substrate equal at this Rotation in even microwave field.The plate and rotation of the target substrate in the uniform microwave field can cause to be applied to the target substrate The polar periodically-varied of microwave.It reacts different from being parallel to surface flow in conventional metals microwave reaction, this is The Foucault current in even microwave field is reacted and flowing perpendicular to the plate.This redirection of the Foucault current provides The target substrate is evenly heated.

There is provided this utility model content introduce in simplified form further described in the following detailed description it is a series of Concept.This utility model content is not intended to identify the key feature or essential characteristic of required theme, is also not intended to use In the range of the required theme of limitation.From the features as discussed above of embodiment, the other aspects of the utility model and Advantage will be evident.

Detailed description of the invention

The embodiments of the present invention are described in detail hereinafter with reference to attached drawing, in attached drawing:

Fig. 1 is the schematic diagram of the Equipment for Heating Processing of various embodiment construction according to the present utility model；

Fig. 2 is the perspective diagram of the example goal substrate heated in the Equipment for Heating Processing for stay in Fig. 1；

Fig. 3 is the perspective diagram of another example goal substrate heated in the Equipment for Heating Processing for stay in Fig. 1；

Fig. 4 is the flow chart of the heat treatment method of various embodiments according to the present utility model；

Fig. 5 is the band gap comparison ambulant figure of bulk for the different semiconductor materials of target substrate；

Fig. 6 is the schematic diagram for carrying out the target substrate of prior art traditional microwave heating, and wherein Foucault current concentrates on mesh It marks the edge of substrate and is substantially parallel to the surface of target substrate and flows；

Fig. 7 is the schematic diagram that the target substrate between two plates of mobility heat treatment is carried out using the method for Fig. 4, Middle Foucault current is flowed perpendicular to target substrate；

Fig. 8 is the schematic diagram with the wherein target substrate of defective silicon crystal lattice；

Fig. 9 is that the target substrate of Fig. 8 carries out the schematic diagram of prior art traditional microwave heating, and wherein Foucault current is in target At the surface of substrate and it is parallel to the surface and flows；And

Figure 10 is the schematic diagram that the target substrate of Fig. 8 of mobility heat treatment is carried out using the method for Fig. 4, wherein Foucault electricity Stream flows into target substrate and vertical with target substrate.

Specific embodiment

The embodiments of the present invention are related to heat treatment system and Equipment for Heating Processing.The specific embodiment of the utility model relates to And it is heated using uniform microwave field and parallel-plate with controlling the industrial microwave for applying Foucault current to target substrate 20.

As shown in fig. 1, the Equipment for Heating Processing 10 of the utility model may include uniform microwave field generator 12, support component 14, two plates 16 and rotating device 18 fixed each other with spaced relationship, the rotating device are configured to make two 16 Hes of plate Target substrate 20 rotates in the uniform microwave field in uniform microwave field generator 12.Although one group of parallel-plate 16 is described herein, It should be noted that can many other plates of vertical stacking with formed batch reaction (that is, the multiple target substrates of once-through operation).

Target substrate 20 can be known any geometry in fields substrate material (such as semiconductor dress Set, chip and/or silicon wafer be ion implanted), and can have plate or chip geometry.For example, target substrate 20 can To be the semiconductor substrate doped with specific dopant impurity (for example, boron, arsenic, phosphorus) to form source/drain junctions.It is practical at this In novel some embodiments, target substrate 20 can be transistor, as shown schematically in Fig. 2 and Fig. 3.Additionally or alternatively Ground, target substrate 20 may include multiple target substrates, such as multiple ion implantations between plate 16 described herein are brilliant Piece.The annealing of target substrate 20 can be used for completing it and activate and repair any associated damage for being implanted region, such as It is described in detail below.

Uniform microwave field generator 12 can be single mode chamber or multimode chamber, or alternatively include waveguide port, should Waveguide port is configured for around plate 16 described below and/or for forming microwave between plate 16 described below ?.It, can be about by the microwave frequency range that uniform microwave field generator 12 generates in some embodiments of the utility model In the range of 900MHz to 26GHz.For example, about 915MHz, about can be by the frequency that microwave field generator 12 generates 2.45GHz or about 5.8GHz or 24GHz.In the other embodiment of the utility model, by uniform microwave field generator 12 The microwave frequency range of generation especially can be in the range of about 950MHz to 25GHz.For another example, it is produced by microwave field generator 12 Raw frequency can be about 950MHz, about 2.0GHz, about 2.55GHz, about 5.0GHz, about 6.0GHz or 25GHz.It is practical new at this In the further embodiment of type, the microwave frequency range generated by uniform microwave field generator 12 especially can about 1GHz to In the range of 20GHz.For example, by the frequency that microwave field generator 12 generates can be about 1GHz, about 2.2GHz, about 3.0GHz, About 4.0GHz, about 4.5GHz or 20GHz.In another embodiment of the utility model, produced by uniform microwave field generator 12 Raw microwave frequency range especially can be in the range of about 1GHz to 24GHz.For example, the frequency generated by microwave field generator 12 Rate can be about 1GHz, about 2.2GHz, about 3.0GHz, about 4.0GHz, about 4.5GHz, 20GHz or 24GHz.However, not departing from In the case where the scope of the utility model, uniform microwave field generator 12 can be configured to generate any wanted microwave frequency.? In some embodiments of the utility model, the heat generated by uniform microwave field generator 12 can be in about 500 DEG C to 700 DEG C of range It is interior.Certainly, other temperature can be used without departing from the scope of the invention.

Support component 14 can be made of insulating materials such as quartz, and may be configured for fixed and/or support plate 16 With target substrate 20.For example, support component 14 can be fixed to the rotating element of rotating device 18.Alternatively, support component 14 It could attach to the inner wall or other parts of uniform microwave field generator 12.In addition, support component 14 may include for by 16 He of plate Target substrate 20 is fixed on slot, fixture or other configurations at the predefined distance being separated by.In some of the utility model In embodiment, support component 14 optionally be can adjust, so that different geometries and/or different materials can be directed to not Different interval is used with plate 16 and/or different target substrate 20.

Plate 16 can be substantially parallel to each other, and can respectively contain semiconductor layer 22 and pedestal layer 24.Pedestal layer 24 can be determined Position is obtained from target substrate 20 recently, and wherein each layer in semiconductor layer 22 is in the outside of two opposite pedestal layers 24.However, In some embodiments of the utility model, pedestal layer 24 can be saved.

Semiconductor layer 22 can be configured in low temperature as dielectric and at high temperature as metal.Therefore, semiconductor The electric conductivity of layer 22 increases as the temperature rises, to form capacitance field to form capacitor between two semiconductor layers 22 Electric field plane.Therefore plate 16 collaboratively serves as plane-parallel capacitor.However, partly being led in some embodiments of the utility model Body layer 22 alternatively replaces with the conductor made of metal or such other conductive materials for becoming conduction when the temperature rises Layer, as long as this metalloid and other materials are in heating as described in this article in the electric conductivity model that can carry surface current In enclosing.

Pedestal layer 24 can be used for preheating therebetween target substrate 20.Specifically, pedestal layer 24 can be by being configured It is made at the material for absorbing microwave and therefore collaboratively formed therebetween uniform microwave field.However, in some of the utility model In alternate embodiment, if it is forming uniform microwave field between two semiconductor layers 22 and/or around it in other ways, that Pedestal layer 24 can be saved.

Plate 16 can have known any size and geometry in fields.In some embodiments of the utility model In, plate 16 can be disc, square or rectangular.In addition, plate 16 can be have generally with the plate in solid-state industries Or disc is associated the Boping disc of thickness.Plate 16 can have about 0.5 millimeter to about 5 millimeters of interval each other.Plate 16 is preferable Ground is as thin as possible, but when being unable to heat when Bao get is installed on support component 14 and/or in uniform microwave field generator 12 Lose its structural intergrity.In some embodiments of the utility model, plate 16 can be spaced about 1 millimeter to 4 millimeters or 6 millis Rice is to 9 millimeters.However, other standoff distances can be used without departing from the scope of the invention.Specifically, plate 16 should be separated by enough to close so that form capacity effect, and therefore closely be reacted enough with enabling to Foucault current, such as herein Described in.

In some embodiments of the utility model, plate 16 can be positioned in the uniform microwave field with any orientation, such as It is horizontal, vertical or other means.Plate 16 can be usually relative to oriented arrangement parallel to each other.However, in some of the utility model In alternate embodiment, plate 16 can each other and/or with target substrate 20 with nonparallel relationship positioning, as long as plate 16 it is close enough with Form capacity effect described herein.

Rotating device 18 can be any machine of the rotation of the known object for causing to be attached to it in fields System.For example, rotating device 18 may include the rotating electric machine outside uniform microwave field generator.In addition, being retouched above One in support component 14 stated could attach to the spin axis of rotating electric machine, and may extend into uniform microwave field generator 12 In, so that plate 16 and/or target substrate 20 are pivotally supported at desired location and desired are spaced each other place.Uniformly micro- In wave field, the changeable microwave polarity for being applied to it of the rotation of two plates 16 and target substrate 20, to simulate prior art side The radio frequency of method switches.For example, it can configure Equipment for Heating Processing 10, so that the rotation of target substrate 20 can change at every 15 ° It is applied to its microwave polarity.It is polar that switching microwave is alternatively used without departing from the scope of the invention Other methods.

Rotating device 18 can be configured to any speed for not making plate 16 and/or target substrate 20 fall off.It is practical new at this In some embodiments of type, minimum speed and rotate most for 10 times per minute that rotating device 18 can be rotated at 1 time per minute Swivel plate 16 and/or target substrate 20 under big speed.For example, rotating device 18 can be in the speed of 2 rotations about per minute Spend lower swivel plate 16 and/or target substrate 20.However, other speed can be used without departing from the scope of the invention Degree.

In use, target substrate 20 can be placed in uniform microwave field generator 12 between plate 16 and in uniform microwave It is rotated in by rotating device 18, thus causes the polar periodically-varied for the microwave for being applied to target substrate 20.Target lining Bottom 20 will be based primarily upon the dielectric properties of its own and be heated, so that microwave is converted to heat and/or in target substrate 20 Cause Foucault current on surface.As described below, Foucault current is made a response and flowing perpendicular to plate 16, thus uniformly Heat target substrate 20.In some embodiments of the utility model, plate 16 may need to adulterate to make uniform microwave field Reaction.

Fig. 4 shows reacting half-and-half for the uniform microwave field of use and parallel-plate for various embodiments according to the present utility model The step in method 200 that conductor material is annealed.The step of method 200 can as shown in Figure 4 order execute or this A little steps can be performed in a different order.In addition, some steps can be performed simultaneously from different in proper order.In addition, can not also execute one A little steps.Some code segments for indicating computer program as described above or application or executable finger in these steps It enables.

In some embodiments of the utility model, method 200 may include doping plate 16 to make instead to uniform microwave field The step of answering, as described in frame 202.For example, intrinsic silicon at room temperature is substantially microwave, and can be through overdoping To make a response to microwave electric field.Doped silicon material can change electric conductivity at room temperature, therefore microwave is allowed to heat at room temperature Silicone parallel-plate/make its reaction.In this example, once heating silicone plate, electric conductivity can be based on the band gap of external silicon materials And reduce.The band gap and its bulk ambulant figure for illustrating a variety of materials are provided in Fig. 5.This reduction of electric conductivity can be achieved micro- Wave is reacted/is penetrated, and when temperature or electric conductivity are in range, parallel-plate electric field is caused in microwave field.It is retouched in this paper In the parallel-plate electric field stated, the Foucault current as caused by microwave reaction will be vertical or be flowed perpendicular to target substrate 20 (as schemed Shown in 10), it is the same parallel with surface (as shown in Figure 9) rather than conventional metals microwave reaction.The one of the utility model In a little embodiments, method 200 can optionally comprising based at least one of plate and target substrate geometry and Material and the step of the distance between adjustment plate 16, as described in frame 204.For example, as described above, support component 14 optionally can adjust, so that can be for different geometries and/or the different plates 16 and/or different mesh of different materials It marks substrate 20 and uses different interval.

Method 200, which can be additionally comprised, is placed in plate 16 in uniform microwave field (for example, multimode room) for target substrate 20 Between the step of, as described in frame 206.As described above, the interval that plate 16 is separated by can be about 1 millimeter to about 4 Millimeter or 6 millimeters to 8 millimeters.Target substrate 20 and plate 16 can the support components 14 as made by for example quartzy insulating material Suspension and support, as described above.

Then, method 200 may include using rotating device 18 so that plate 16 and/or target substrate 20 are in uniform microwave field The step of rotation (as described in frame 208), thus cause the polar periodically-varied for the microwave for being applied to target substrate 20. Target substrate 20 will be based primarily upon the dielectric properties of its own and be heated, so that microwave is converted to heat and/or is served as a contrast in target Cause Foucault current on the surface at bottom 20.Traditionally, surface current or Foucault current 26 be formed in microwave field plate and/or The edge or boundary of target substrate 20, as shown in Figure 6.However, swivel plate disclosed herein configuration provide relative to The perpendicular flow (as shown in Figure 7) of the Foucault current 26 of target substrate 20, so as to cause being evenly heated to it and selectively Ground heats the defects of the silicon crystal lattice of target substrate 20, as shown in Figure 10.On the contrary, simple microwave shown in such as Fig. 9 adds The conventional heating methods of heat do not selectively heat the defects of silicon crystal lattice.

Specifically, Fig. 8 is schematically shown with the silicon crystal lattice containing defective 30 (also referred to as mobility reduction regions) 28 target substrate 20.Fig. 9 shows identical silicon crystal lattice 28 and is individually heated by microwave 32, wherein gained Foucault current 26 is parallel to mesh Substrate 20 is marked to flow.Fig. 9 also describes the inside heat 34 resulted from silicon crystal lattice 28 by microwave 32.

Figure 10, which is shown, heats silicon crystal lattice 28 via method 200 as described above and depicted in figure 4, wherein generate Internal hot 34 are further with defect 30 therein from volume via the vertical Foucault current 26 flowed into target substrate 20 Target.The redirection of Foucault current 26 allows to be in target substrate 20 in selected element that interfacial polarization occurs, at the selected element, Foucault current 26 is suppressed (for example, crystal grain defect, impurity and other defects 30).The polarization of defect 30 may not be at itself Cause very big reaction, but current polarized defect 30 is also limited by pre-existing microwave field (for example, microwave 32), to permit Perhaps defect 30 is heated by " selectively ".This means that rest part (the referred to herein as big bulk with target substrate 20 Material) it compares, the temperature of defect 30 will be high.This massive material may act as cooling fin, the big bulk of dissipation objectives substrate 20 Heat in material.It should be noted that it is also different for causing the ability of Foucault current when microwave field is in different frequency ranges , the intensity of caused Foucault current is also different.In a preferred embodiment of the invention, microwave field is using about Frequency in the range of 1GHz to 24GHz, to react the Foucault current for causing suitable intensity, to obtain desired heating effect Fruit.Heating of the Foucault current caused by the microwave of the frequency range to target substrate so that defect 30 be heated after temperature It is not Tai Gao and massive material is caused not radiate in time, and be also not too low and prevent heat treatment to substrate from reaching To desired effect.

In another preferred embodiment of the invention, microwave field uses the frequency in the range of about 1GHz to 20GHz, To react the Foucault current for causing comparatively ideal intensity and frequency, to provide preferably comparatively ideal heating to substrate.In addition, Uniform microwave field may include frequency perhaps in 950MHz to 25GHz range of frequency in 900MHz to 26GHz range or The frequency in frequency or 1GHz to 24GHz range in 1GHz to 20GHz range, so that realization is right according to different needs Substrate provides different heating effects.

Therefore heating means described herein 200 complete activation and repair being implanted or mixing for target substrate 20 Any associated damage in miscellaneous region, without undesirable thermal runaway and electric arc in prior art microwave annealing method.Have Benefit, not such as the formation for attempting management in prior art microwave method, minimizing or eliminate Foucault current, the utility model The direction for changing gained Foucault current flowing, thus avoids non-uniform heat flux, and effectively repairs lacking in target substrate 20 It falls into.

Although the embodiments of the present invention are described in conjunction with attached drawing herein, it should be noted that not departing from power In the case where protection scope defined in sharp claim, the embodiments of the present invention can be carried out with various modifications, and these Modification both falls within the protection scope of the application.

Claims (30)

1. a kind of Equipment for Heating Processing for being heat-treated to substrate, which is characterized in that the equipment includes:

Generate the uniform microwave field generator for the uniform microwave field that frequency range is 1GHz to 24GHz；

Mixed with the capacitor board of impurity, it is located in the uniform microwave field generator and is oriented in the uniform microwave field Capacity effect is formed between the capacitor board, the spacing distance of the capacitor board is between 1 millimeter to 4 millimeters or in 6 millis Rice is between 9 millimeters；And

Rotating device is configured to rotate the capacitor board and the substrate in the uniform microwave field, thus cause The polar periodically-varied of the microwave for being applied in the substrate from the uniform microwave field.

2. Equipment for Heating Processing according to claim 1, which is characterized in that the capacitor board is doped to by described uniform The microwave electric field that microwave field generator generates is made a response.

3. Equipment for Heating Processing according to claim 1, which is characterized in that it further comprise support component, the support member Part includes insulating material, the insulating material by the rotating device be attached to the capacitor board and by the capacitor board that This is fixed in parallel.

4. Equipment for Heating Processing according to claim 3, which is characterized in that at least one of described support component is configured It is between the capacitor board and parallel with the capacitor board at the substrate to be fixed on.

5. Equipment for Heating Processing according to claim 3, which is characterized in that the support component optionally adjusts, and makes It is adjustable to obtain the distance between described capacitor board.

6. the Equipment for Heating Processing according to any one of preceding claims, which is characterized in that in the uniform microwave field Foucault current by perpendicular to the capacitor board flow and react to the polar periodically-varied, thus provide pair The substrate is evenly heated.

7. Equipment for Heating Processing described in any one of -5 according to claim 1, which is characterized in that the capacitor board has enough High electric conductivity in the uniform microwave field to form electric field, and the heat of 500 to 700 degrees Celsius of receiving.

8. Equipment for Heating Processing according to claim 6, which is characterized in that the capacitor board have sufficiently high electric conductivity with Electric field is formed in the uniform microwave field, and bears 500 to 700 degrees Celsius of heat.

9. Equipment for Heating Processing described in any one of -5 according to claim 1, which is characterized in that the uniform microwave field occurs Device is single mode chamber or multimode chamber or waveguide port, is configured to form the uniform microwave field around the capacitor board.

10. Equipment for Heating Processing according to claim 6, which is characterized in that the uniform microwave field generator is one-mode cavity Room or multimode chamber or waveguide port are configured to form the uniform microwave field around the capacitor board.

11. Equipment for Heating Processing according to claim 7, which is characterized in that the uniform microwave field generator is one-mode cavity Room or multimode chamber or waveguide port are configured to form the uniform microwave field around the capacitor board.

12. Equipment for Heating Processing described in any one of -5 according to claim 1, which is characterized in that the capacitor board respectively wraps Containing semiconductor layer and pedestal layer, the orientation of the capacitor board is configured such that the pedestal layer faces each other.

13. Equipment for Heating Processing according to claim 6, which is characterized in that the capacitor board respectively contain semiconductor layer and Pedestal layer, the orientation of the capacitor board are configured such that the pedestal layer faces each other.

14. Equipment for Heating Processing according to claim 7, which is characterized in that the capacitor board respectively contain semiconductor layer and Pedestal layer, the orientation of the capacitor board are configured such that the pedestal layer faces each other.

15. Equipment for Heating Processing according to claim 9, which is characterized in that the capacitor board respectively include be configured to Temperature raising and electric conductivity increase semiconductor material or conductor material.

16. Equipment for Heating Processing described in any one of -5 according to claim 1, which is characterized in that the capacitor board respectively wraps It includes and is configured to as the temperature rises and the semiconductor material or conductor material of electric conductivity increase.

17. Equipment for Heating Processing according to claim 6, which is characterized in that the capacitor board respectively include be configured to Temperature raising and electric conductivity increase semiconductor material or conductor material.

18. Equipment for Heating Processing according to claim 7, which is characterized in that the capacitor board respectively include be configured to Temperature raising and electric conductivity increase semiconductor material or conductor material.

19. Equipment for Heating Processing according to claim 9, which is characterized in that the capacitor board respectively include be configured to Temperature raising and electric conductivity increase semiconductor material or conductor material.

20. Equipment for Heating Processing according to claim 11, which is characterized in that the capacitor board respectively include be configured to Temperature raising and electric conductivity increase semiconductor material or conductor material.

21. Equipment for Heating Processing described in any one of -5 according to claim 1, which is characterized in that the uniform microwave field hair Raw device generates the frequency of 1GHz, 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

22. Equipment for Heating Processing according to claim 6, which is characterized in that the uniform microwave field generator generation 1GHz, The frequency of 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

23. Equipment for Heating Processing according to claim 7, which is characterized in that the uniform microwave field generator generation 1GHz, The frequency of 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

24. Equipment for Heating Processing according to claim 9, which is characterized in that the uniform microwave field generator generation 1GHz, The frequency of 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

25. Equipment for Heating Processing according to claim 11, which is characterized in that the uniform microwave field generator generates The frequency of 1GHz, 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

26. Equipment for Heating Processing according to claim 16, which is characterized in that the uniform microwave field generator generates The frequency of 1GHz, 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz, 20GHz or 24GHz.

27. a kind of Equipment for Heating Processing for being heat-treated to substrate, which is characterized in that the equipment includes:

Generate the uniform microwave field generator for the uniform microwave field that frequency range is 950MHz to 25GHz；

Mixed with the capacitor board of impurity, it is located in the uniform microwave field generator and is oriented in the uniform microwave field Capacity effect is formed between the capacitor board, and 1 millimeter to 4 millimeters or 6 millimeters to 9 millimeters are divided between the capacitor board； And

Rotating device is configured to rotate the capacitor board and the substrate in the uniform microwave field, thus cause The polar periodically-varied of the microwave for being applied in the substrate from the uniform microwave field,

Wherein, the Foucault current in the uniform microwave field perpendicular to the capacitor board and flowing to the polar period It sexually revises and reacts, the substrate is evenly heated to provide.

28. Equipment for Heating Processing according to claim 27, which is characterized in that the uniform microwave field generator generates The frequency of 950MHz, 2.0GHz, 2.55GHz, 5.0GHz, 6.0GHz or 25GHz.

29. a kind of Equipment for Heating Processing for being heat-treated to substrate, which is characterized in that the equipment includes:

Generate the uniform microwave field generator for the uniform microwave field that frequency range is 1GHz to 20GHz；

Mixed with the capacitor board of impurity, it is located in the uniform microwave field generator and is oriented in the uniform microwave field Capacity effect is formed between the capacitor board, and 1 millimeter to 4 millimeters or 6 millimeters to 9 millimeters are divided between the capacitor board； And

Rotating device is configured to rotate the capacitor board and the substrate in the uniform microwave field, thus cause The polar periodically-varied of the microwave for being applied in the substrate from the uniform microwave field,

Wherein, the Foucault current in the uniform microwave field perpendicular to the capacitor board and flowing to the polar period It sexually revises and reacts, the substrate is evenly heated to provide.

30. Equipment for Heating Processing according to claim 29, which is characterized in that the uniform microwave field generator generates The frequency of 1GHz, 2.2GHz, 3.0GHz, 4.0GHz, 4.5GHz or 20GHz.