JP3243495U - Composite high-speed annealing equipment - Google Patents

Abstract

The present invention provides a composite high-speed annealing device that can maintain a constant heating rate of a workpiece. A composite high-speed annealing device (10) includes two electrodes (20), a heating chamber (30), an induction heating device (40), and a dielectric heating device (50), and at least one workpiece is connected to one of the two electrodes. and located within the chamber 32 of the heating chamber. The induction heating device of the combined high-speed annealing device performs an induction heating process on the workpiece. The electrical conductivity of the workpiece decreases with the increase in temperature, the two electrodes heat the workpiece, and the dielectric heating device also performs a dielectric heating process on the workpiece. [Selection diagram] Figure 1

Description

TECHNICAL FIELD The present invention relates to an annealing apparatus, and more particularly to a combined high-speed annealing apparatus.

Silicon carbide (SiC) has a wide bandgap, high breakdown field, high thermal conductivity, and excellent chemical inertness, making it an important semiconductor material for the fabrication of high-temperature, high-power, and high-frequency devices. . It should be noted that ion implantation is a technique indispensable for fabricating SiC semiconductor devices.
Annealing is a process necessary for removing lattice damage and activating implanted ions after ion implantation. For silicon carbide, the temperature above 1,500° C. must be implanted and annealed to obtain process effects.

Conventional annealing is typically performed in ceramic furnaces with resistance heating or low frequency induction heating.
However, the slow heating/cooling rate of ceramic furnaces (20°C/min) makes it difficult to anneal silicon carbide at temperatures above 1,500°C.
When silicon carbide is exposed to temperatures above 1,400° C. for a long period of time, the constituents on the substrate surface undergo sublimation and redeposition (commonly referred to as step clustering), resulting in the formation of silicon carbide. This results in an increase in wafer surface roughness and limits the maximum annealing temperature.
Such limitations on annealing temperatures may not sufficiently activate the implanted ions, resulting in high contact and channel region resistances.

Therefore, the development of high-speed annealing technology is key to avoiding the problem that the heating rate of the conventional annealing technology is too slow and the surface of the silicon carbide wafer is degraded.
However, although the halogen lamp and laser technology allows for rapid heat treatment, there are still some problems, such as the highest achievable annealing temperature, surface melting, high residual defect density, and re-implantation. There are problems such as distribution.

On the other hand, silicon carbide can effectively absorb microwave energy and, with a properly designed annealing system, microwaves can heat or cool silicon carbide wafers at extremely high rates. It also allows good control over the time it takes to anneal.
Microwaves have the property of selective heating, being absorbed only by the semiconductor wafer and not being absorbed by the surrounding environment, and the heating rate of annealing is extremely fast. And during the annealing process, the temperature rise of the surrounding environment of the silicon carbide wafer is small, and the cooling speed of the silicon carbide wafer is fast when the microwave source is turned off.
Compared with conventional annealing techniques, when using microwaves to anneal silicon carbide, the heating rate is 600°C/s, according to the results of heating a small area silicon carbide wafer. can be exceeded and temperatures can reach 2,000°C.

However, the microwave wavelength is shorter and the energy distribution is non-uniform when heating the reaction chamber, resulting in uneven heating of the silicon carbide wafer. In particular, as the area of the silicon carbide wafer increases, the volume of the heating reaction cavity increases, and the problem of uneven heating during annealing becomes severe. And the required energy of the microwave is also greatly increased, making the device more expensive.

The main purpose of the present invention is to combine the induction heating mechanism and the dielectric heating mechanism, so that the conductor and the non-conductor can be heated at the same time, for example, the induction heating mechanism can increase the temperature of the silicon carbide wafer. and when the temperature of the silicon carbide wafer rises and the conductivity drops, the heating rate of the silicon carbide wafer can be kept constant by increasing the temperature of the silicon carbide wafer through a dielectric heating mechanism. An object of the present invention is to provide a high-speed annealing device.

When a silicon carbide wafer is heated by electromagnetic waves that generate an alternating magnetic field, an eddy current is generated to obtain an induction heating effect.
However, when the temperature exceeds 500 degrees K, the conductivity of silicon carbide wafers drops rapidly, causing an increase in its resistivity. In addition, the electromagnetic wave having an alternating electric field can also heat the silicon carbide wafer by generating a dielectric heating mechanism, so the dielectric loss tangent of the silicon carbide wafer is increases as the temperature rises, and when the temperature rise exceeds about 1,000 degrees Celsius, the dielectric loss tangent rapidly increases significantly.
Therefore, the present invention proposes a combined heating mechanism, which combines induction heating mechanism and dielectric heating mechanism to heat a workpiece, such as a silicon carbide wafer.

According to the combined high-speed annealing apparatus of the present invention, two electrodes between which at least one workpiece is placed;
a heating chamber having a chamber for containing at least a workpiece;
an induction heating device that performs an induction heating process on the workpiece in the heating chamber, generates an induced magnetic field, and generates an eddy current in the workpiece, thereby heating the workpiece;
a dielectric heating device for performing a dielectric heating process on the workpiece in the heating chamber and generating an electric field between the two electrodes to heat the workpiece located between the two electrodes;
characterized by comprising

According to the combined high-speed annealing apparatus according to the present invention, the induction heating apparatus performs the induction heating process on the workpiece and the two electrodes in the heating chamber, thereby heating the workpiece and It is characterized by heating the two electrodes.

According to the combined high-speed annealing apparatus of the present invention, further comprising a Faraday shielding layer provided in the heating chamber, the induction heating device passing through the Faraday shielding layer to the chamber of the heating chamber, It is characterized by forming the induced magnetic field.

According to the combined high-speed annealing apparatus of the present invention, the Faraday shielding layer is a metal cylinder having a plurality of openings.

According to the combined high-speed annealing apparatus of the present invention, the metal cylinder has a reflective surface for reducing radiant heat loss in the heating chamber.

The composite high-speed annealing apparatus according to the present invention is characterized in that the reflective surface of the metal cylinder is further covered with a reflective layer.

The composite high-speed annealing apparatus according to the present invention is characterized in that at least one barrier layer is provided between the two electrodes and the workpiece.

According to the composite high-speed annealing apparatus according to the present invention, there are a plurality of objects to be processed, and at least one barrier layer is provided between the objects.

According to the combined high-speed annealing apparatus according to the present invention, one of the barrier layer and the object to be processed has a polycrystalline structure, and the other of the barrier layer and the object to be processed has a single-crystal structure. characterized by

According to the combined high-speed annealing apparatus according to the present invention, the induction heating apparatus and the dielectric heating apparatus perform the induction heating process and the dielectric heating process on the workpiece and the barrier layer. The object to be processed and the barrier layer are heated by.

The composite high-speed annealing apparatus according to the present invention is characterized in that the workpiece is selected from a group consisting of conductors and non-conductors.

According to the combined high-speed annealing apparatus of the present invention, the object to be processed is a wafer.

The composite high-speed annealing apparatus according to the present invention is characterized in that the two electrodes are made of graphite.

According to the combined high-speed annealing apparatus according to the present invention, the induction heating device comprises an inductance coil wound around the heating chamber, and the induction heating device has a first heating element having a first predetermined frequency on the inductance coil. alternating electromagnetic signals to generate the induced magnetic field between the workpiece and the two electrodes.

According to the composite high-speed annealing apparatus of the present invention, the first predetermined frequency range is 50 kHz to 200 kHz.

According to the combined high-speed annealing device of the present invention, the dielectric heating device applies a second alternating electromagnetic signal having a second predetermined frequency to the two electrodes located on both sides of the workpiece. It is characterized by generating the electric field.

According to the composite high-speed annealing apparatus of the present invention, the range of the second predetermined frequency is 10MHz to 900MHz.

According to the combined high-speed annealing device of the present invention, the dielectric heating device comprises an RF power source and an adapter, wherein the RF power source supplies the second alternating electromagnetic signal having the second predetermined frequency. and the adapter is positioned between the RF power source and the two electrodes and is electrically connected to both to reduce the reflection of the second alternating electromagnetic signal.

The combined high-speed annealing apparatus according to the present invention further comprises a gas input unit and a gas discharge unit respectively communicating with the chamber of the heating chamber, so that the chamber of the heating chamber is brought to a predetermined pressure. characterized by being retained.

According to the combined high-speed annealing apparatus of the present invention, the predetermined pressure range of the chamber of the heating chamber is 0.1 atm to 10 atm.

The combined high-speed annealing apparatus of the present invention further comprises a measurement and control system comprising a pressure detection unit and a controller, wherein the pressure detection unit is for measuring the air pressure in the heating chamber. and wherein the controller controls the operation of the gas input unit and/or the gas discharge unit according to the magnitude of the air pressure.

According to the combined rapid annealing apparatus of the present invention, the measurement and control system further comprises a pyrometer for measuring the temperature of the chamber of the heating chamber.

According to the combined high-speed annealing apparatus of the present invention, the heating chamber comprises a cavity, an upper lid and a lower lid, the cavity being located between the upper lid and the lower lid, and The chamber is formed between the cavity, the upper lid and the lower lid by connecting with.

The composite high-speed annealing apparatus according to the present invention is characterized in that the material of the heating chamber is a quartz tube or a ceramic tube.

The combined high-speed annealing apparatus according to the present invention has the following effects.
(1) Since the induction heating mechanism and the dielectric heating mechanism are combined, the conductor and the non-conductor can be heated at the same time, for example, the induction heating mechanism can raise the temperature of the silicon carbide wafer, and When the temperature of the wafer rises and the conductivity drops, the heating rate of the wafer can be kept constant by increasing the temperature of the silicon carbide wafer through a dielectric heating mechanism.

(2) The temperature of the electrodes can also be increased by an induction heating mechanism. As a result, when the temperature of the silicon carbide wafer rises and the conductivity drops, the silicon carbide wafer can be continuously heated by heating the electrode, and the heating rate of the silicon carbide wafer can be kept constant. can be held.

(3) The electrode can be used as a mounting pedestal and a heating pedestal.

(4) The heating chamber has a metal cylinder, which can be a reflective layer and can also be a Faraday shielding layer. Eddy currents can also be generated in the wafer by entering the heating chamber.

(5) Since there is a barrier layer positioned between the electrode and the wafer or between the wafers, it is possible to prevent the diffusion of contamination phenomena. The barrier layer can also be used as a mounting pedestal and heating pedestal.

In order to deepen the understanding of the technical features and achievable technical effects of the present invention, better examples and detailed descriptions are given below.

FIG. 1 is a cross-sectional view showing the structure of an embodiment of a combined high-speed annealing apparatus according to the present invention; 1 is a perspective view of a Faraday shielding layer of a combined high-speed annealing apparatus according to the present invention; FIG. 3(A), 3(B) and 3(C) are schematic diagrams showing the operation of the dielectric heating mechanism of the combined rapid annealing apparatus according to the present invention, showing multiple wafers, a single wafer and an unused barrier layer; , respectively. FIG. 4 is a schematic diagram showing the operation of the induction heating mechanism of the combined high-speed annealing apparatus according to the present invention; 4 is a flow chart showing a combined heating process of a combined rapid annealing method according to the present invention; FIG. 4 is a cross-sectional view showing the structure of another embodiment of the combined high-speed annealing apparatus according to the present invention;

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The proportions of each member in the drawings of the embodiments of the present invention are shown for easy understanding of the description, and are not actual proportions. Also, the dimensional ratios of the assemblies shown in the figures are for the purpose of explaining each part and its structure, and of course the present invention is not limited thereto. On the other hand, for convenience of understanding, the same parts in the following embodiments will be described with the same reference numerals.

Furthermore, the terms used throughout the specification and in the utility model claims, unless otherwise specified, generally refer to the commonality of each term used in this field, the content disclosed herein, and the specific content. has the meaning of Certain terms used to describe the invention are explained below or elsewhere in the specification to provide those skilled in the art with additional guidance regarding the description of the invention.

The use of "first," "second," "third," etc. in this article is not intended to specifically indicate an order or sequence, nor is it used to limit the present invention. It is only used to distinguish between components or operations that are described with the same terminology.

Secondly, whenever this article uses terms such as “include,” “comprising,” “have,” “contain,” etc., they are all open terms. That is to say, these are meant to include, but not be limited to.

The combined high-speed annealing apparatus according to the present invention will be described as an example where the object to be processed is a wafer (eg, silicon carbide wafer). The physical properties of silicon carbide are such that when it reaches a high temperature during processing processes such as heating, its electrical conductivity drops rapidly, but its electromagnetic wave dielectric absorption rate rises quickly. Other wafer materials also have similar properties.
Therefore, the present invention adopts a compound heating mechanism, which includes using a medium frequency induction heating mechanism to quickly raise the temperature of the wafer. For a doped wafer, when the temperature rises rapidly to a certain value, its conductivity drops rapidly, and the conductivity follows the wafer temperature change due to different doping concentrations and types. change differently.
Therefore, the present invention adopts a compound heating mechanism, and further uses RF power to apply a dielectric heating mechanism to the wafer whose conductivity drops rapidly to heat the wafer. An effect of being able to perform high-speed annealing is obtained.

Please refer to FIGS. 1 to 5. FIG. FIG. 1 is a cross-sectional view showing an embodiment of a composite high-speed annealing apparatus according to the present invention. FIG. 2 is a perspective view of the Faraday shielding layer of the combined high-speed annealing apparatus according to the present invention. FIG. 3 is a schematic diagram showing the operation of the dielectric heating mechanism of the composite high-speed annealing apparatus according to the present invention. FIG. 4 is a schematic diagram showing the operation of the induction heating mechanism of the combined high-speed annealing apparatus according to the present invention. FIG. 5 is a flow chart showing the combined heating process of the combined rapid annealing method according to the present invention.
A composite high-speed annealing apparatus 10 according to the present invention comprises two electrodes 20, a heating chamber 30, an induction heating device 40 and a dielectric heating device 50, as shown in FIG. The workpiece is placed between two electrodes 20, for example.
For example, electrode 20 is for placing a workpiece.
The work piece employs a material whose conductivity decreases with increasing temperature or whose conductivity changes with changing temperature, such as wafer 22 . The workpiece may be, for example, a wafer 22 of silicon carbide or a wafer 22 of another material (eg, Si, SiGe, Ge, GaAs, GaN or InP) and at any stage during the semiconductor fabrication process. , and regardless of whether the workpiece is doped or doped with what material, all fall within the protection scope of the present invention.
However, the invention is not so limited and the workpiece may be, for example, any other material or object, such as a crystal ingot or any object that needs to be heated.
Graphite, for example, is used as the material of the electrode 20 .
Thus, when the wafer 22 is placed between the two electrodes 20, the electrode 20 can serve as a pedestal for the wafer 22 and is used as a heatable electrode (also referred to as a heating pedestal). can also
As such, electrode 20 may employ other materials with similar or similar effects. Although the present invention takes as an example a workpiece whose electrical conductivity decreases with increasing temperature or changes electrical conductivity with changing temperature, the scope of rights of the present invention is not limited thereto.
That is, regardless of whether the electrical conductivity (also referred to as electrical conductivity) changes with changes in temperature, any object that can be heated using the combined high-speed annealing apparatus 10 according to the present invention can all be It belongs to the scope of the claims of the present invention.

The combined rapid annealing apparatus 10 according to the present invention performs combined heating processes on the wafer 22 in the heating chamber 30 .
This combined heating process utilizes the induction heating mechanism shown in FIG. 4 and the dielectric heating mechanism shown in FIG.
The heating chamber 30 has a chamber 32 for containing two electrodes 20 and a wafer 22 .
In the combined heating process, the induction heating device 40 of the combined high-speed annealing apparatus according to the present invention performs the induction heating process shown in step S10 in FIG. conduct.
The induction heating device 40 generates an alternating magnetic field (Magnetic Field) and an induced magnetic field having a changing magnetic flux (Magnetic Flux, Φ) by the first alternating electromagnetic signal (AC). As shown in FIG. 4, the wafer 22 and the two electrodes 20 are heated by generating an eddy current (Eddy Current, I _EC ) in the wafer 22 and the two electrodes 20 .

である。
σ_mは加工対象物の導電率（Ｃｏｎｄｕｃｔｉｖｉｔｙ）であり、ω = ２πｆ，ｆ は電磁波の周波数であり、Ｂは交番磁界の強度である。
加工対象物はドーピングされた（ｄｏｐｅｄ）炭化ケイ素のウエハーである場合には、導電率（すなわち、１／抵抗率）が温度の上昇に従って上昇するが、温度は例えば５００度Ｋを超えたと、導電率が高速に降下する（すなわち、抵抗率が上昇する。）。 In the induction heating mechanism, the heating energy generated per unit volume of the workpiece is expressed by the following equation.
this is

is.
σ _m is the conductivity of the workpiece, ω=2πf,f is the frequency of the electromagnetic wave, and B is the intensity of the alternating magnetic field.
If the workpiece is a doped silicon carbide wafer, the electrical conductivity (i.e., 1/resistivity) increases with increasing temperature, but when the temperature exceeds, for example, 500 degrees K, the electrical conductivity increases. A rapid drop in modulus (ie, an increase in resistivity).

In the combined heating process of the combined rapid annealing apparatus 10 according to the present invention, the dielectric heating device 50 performs a dielectric heating process on the wafer 22 in the heating chamber 30, as shown in step S20 of FIG.
The dielectric heating device 50 heats the wafer 22 positioned between the two electrodes 20 by generating an electric field between the two electrodes 20 .
There is one wafer 22 as shown in FIGS. 3(B) and 3(C), or a plurality of wafers 22 as shown in FIG. 3(A).
Also, between the two electrodes 20 and the wafer 22, and between the two adjacent wafers 22, optionally, according to actual needs, at least one electrode as shown in FIGS. A single barrier layer 24 may be provided, or, as shown in FIG. may be provided.
The purpose of providing the barrier layer 24 is to prevent the occurrence of contamination phenomena due to the diffusion of doping components across boundaries due to temperature rise between the wafers 22 and between the wafer 22 and the electrode 20 .
With barrier layer 24, it can also be used as a mounting pedestal for wafer 22 and a heating pedestal.
Barrier layer 24 may optionally employ a material that can be heated by induction heating device 40 and dielectric heating device 50 .
As a result, the induction heating device 40 and the dielectric heating device 50 simultaneously perform the induction heating step (S10) and the dielectric heating step (S20) on the wafer 22 and the barrier layer 24, for example. The barrier layer 24 is heated. For example, if the material of wafer 22 employs a single crystal structure (eg, single crystal silicon carbide), then the composition of barrier 24 employs, for example, a polycrystalline structure (eg, polycrystalline silicon carbide), and vice versa.
That is, wafer 22 and barrier 24 employ different materials, for example.
However, the present invention is not so limited, and the barrier layer 24 may employ any material, or may be heated, as long as a barrier effect (e.g., a diffusion barrier effect) can be obtained. However, they are all within the scope of protection of the present invention.
In order to facilitate the description of the technical means and effects of the present invention, the present invention takes as an example that the workpiece is a wafer 22 (such as a silicon carbide wafer) and the electrode 20 is a graphite electrode. However, any material, object or structure that can be heated by the combined high-speed annealing apparatus of the present invention is within the protection scope of the present invention.
In the combined heating process, the induction heating device 40 and the dielectric heating device 50 are not limited to performing the induction heating step (step S10) and the dielectric heating step (step S20) simultaneously, sequentially, intermittently, or alternately.

The heating mechanism of the combined high-speed annealing apparatus according to the present invention adopts a medium-frequency induction heating mechanism.
The reason for this is that when using a heating power supply that uses high and low frequency electromagnetic fields, there are certain things that must be considered. Well, the second aspect is to consider the penetration depth of electromagnetic waves.
A graphite electrode 20 serves as a pedestal for the silicon carbide wafer 22 and as a heating electrode.
This is because the penetration depth of the electrode 20 is less than 400 μm when the electromagnetic wave is greater than 10 MHz. , the attenuation does not increase.
It should be noted that for low-frequency electromagnetic waves, the penetration depth is greater than the heating pedestal composed of graphite electrode 20 and silicon carbide wafer 22 .
In other words, the whole can be effectively heated by the first alternating electromagnetic signal of medium frequency.
In particular, graphite is resistant to high temperatures and has a highly efficient induction heating mechanism, so that the temperature of the heating pedestal composed of the graphite electrode 20 and the silicon carbide wafer 22 can be rapidly increased.
However, in the present invention, an electromagnetic field with a medium frequency has been described as an example, but the scope of rights of the present invention is not limited to this. On the other hand, as long as induction heating can be performed, it belongs to the protection scope of the present invention.

For example, in the early and middle stages of the heating reaction, the present invention can rapidly increase the temperature of the graphite electrode 20 and the silicon carbide wafer 22 through the induction heating mechanism.
When the temperature of the silicon carbide wafer 22 is higher than, for example, 500 degrees K, the conductivity of silicon carbide decreases and the heating effect worsens, but the electrode 20 employing graphite is still induction-heated and can be heated at that temperature. The rate of ascent can be kept constant.
In addition, during the process of increasing the temperature, the dielectric loss tangent of silicon carbide continuously increases, thereby increasing the efficiency of dielectric heating. When the temperature rises to about 1,000 degrees Celsius, the dielectric loss tangent rises significantly, so the effect of dielectric heating can be accelerated.

Specifically, the induction heating device 40 comprises, for example, an inductance coil 42 wound around the heating chamber 30 .
The induction heating device 40 generates an induced magnetic field in the wafer 22 and the two electrodes 20 by applying a first alternating electromagnetic signal of a first predetermined frequency to the inductance coil 42 .
The inductance coil 42 is driven by a medium frequency AC power source, and the first predetermined frequency range is approximately, but not limited to, 50 kHz to 200 kHz.
In this embodiment, heating chamber 30 includes, for example, cavity 34 , top lid 36 and bottom lid 38 .
Cavity 34 is located between top lid 36 and bottom lid 38 and is connected to both to form chamber 32 between cavity 34 and top lid 36 and bottom lid 38 .
An inductance coil 42 is wound around the cavity 34 of the heating chamber 30 .
To perform the induction heating mechanism, the cavity 34 of the heating chamber 30 employs materials such as quartz or ceramics.
The RF power supply 52 of the dielectric heating device 50 applies a second alternating electromagnetic signal of a second predetermined frequency to the two electrodes 20 via the top lid 36 and the bottom lid 38 .
The upper lid 36 and the lower lid 38 are composed of, for example, a metal layer 35 and a heat insulating material layer 37 .
However, the present invention is not so limited, and in other possible embodiments, the heating chamber 30 according to the present invention may be made entirely of quartz, ceramics, or other materials, for example.

The present invention optionally adds a reflective design to the heating chamber 30 to increase infrared reflectivity and minimize radiant heat loss.
For example, the present invention provides a metal cylinder 60 outside the cavity 34 of the heating chamber 30, as shown in FIGS.
The metal cylinder 60, for example an optically polished metal drum, can be a reflective surface and optionally coated with a reflective layer (eg gold) 62 to increase infrared reflectivity. can.
As a result, it is possible to reduce the radiant heat loss generated in the heating pedestal composed of the graphite electrode 20 and the silicon carbide wafer 22 in an extremely high temperature state.
In addition, according to the present invention, the metal cylinder 60 may optionally be provided with a plurality of openings 64 .
The openings 64 are, for example, distributed along the longitudinal direction (eg, in the form of long strips) and surrounding the metal cylinder 60 so that the metal cylinder 60 serves as a Faraday shield layer 66 for induction heating. The alternating magnetic field generated by device 40 can enter chamber 32 of heating chamber 30 through Faraday shield layer 66 .
This generates an eddy current _IEC between the electrode 20 and the wafer 22, as shown in FIG.

The dielectric heating device 50 is an RF media heating device (also referred to as an RF heating device) which, as shown in FIGS. 1 and 3, provides a second alternating electromagnetic signal having a second predetermined frequency to heat the wafer. An electric field is generated between the two electrodes 20 located on either side of the wafer 22 to perform a dielectric heating process on the wafer 22 in the heating chamber 30 .
Thereby, the heating rate of the wafer 22 can be kept constant.
For example, the dielectric heating device 50 comprises an RF power source 52 and optionally further comprises an adapter 54, the RF power source 52 supplying a second alternating electromagnetic signal having said second predetermined frequency.
The RF power source 52 is in electrical communication with, for example, the two electrodes 20 either directly or via conductive wires (not shown).
An adapter 54 is positioned between the RF power source 52 and the two electrodes 20, and can be electrically connected to both to reduce reflections of the second alternating electromagnetic signal.
That is, the matching circuit of the adapter 54 adjusts the impedance of the heating chamber 30 to match the RF power supply 52 (e.g. RF/microwave power supply) to reduce reflection of electromagnetic waves (e.g. RF and microwave). can be done.
The RF power source 52 employs a frequency higher than 10 MHz and a frequency lower than 900 MHz in consideration of the uniformity of the electromagnetic field distribution.
That is, the second predetermined frequency range is from 10 MHz to 900 MHz, but is not limited thereto. For example, from 10 MHz to 400 MHz, the output power may be adjusted in the range of 1 kilowatt and more.
The second predetermined frequency range can be any numerical range or upper and lower endpoint values in the frequency and power ranges described above.
The parameters of inductance L and capacitance C in the matching circuit of adapter 54 can be varied with changes in operating conditions to maintain good coupling conditions.
The existing inductance L and capacitance C in the matching circuit of the adapter 54 can be electronically tuned so that there is no delay in tuning response time and higher heating rates are possible.
Impedance matching is very important for achieving fast heating.
The optimal design of matching networks will vary from application to application.
Those skilled in the art of the present invention can understand how to implement the dielectric heating device 50 based on the disclosure of the present invention. And since it should be understood how to adopt the matching circuit of the adapter 54 and the RF power supply 52 corresponding thereto, the explanation is omitted.

In the present invention, it is selected from the group consisting of conductors (e.g., conductive wafers) and non-conductors (e.g., non-conductive wafers) because it has an induction heating mechanism and a dielectric heating mechanism at the same time. A high-speed annealing process can be performed on the wafer.
In the present invention, non-conductive wafers and silicon carbide conductive wafers are described as examples, but are not limited thereto.
Moreover, the control and adjustment of the distribution of the electromagnetic field according to the present invention is easy, so that it can be applied to the annealing process of multiple wafers.
Even for silicon carbide wafers with large dimensions (e.g., larger than 8 inches), based on the operating principle and structure of the combined high-speed annealing apparatus according to the present invention, the design of the annealing system is modified accordingly. can be done.
In addition, it should be noted that the present invention takes the example that the electrode 20 can hold the wafer 22 and can be heated by the induction magnetic field, but the scope of the invention is limited to this. not.
For example, the electrodes 20 according to the present invention may not be for mounting the wafer 22, for example, but may be positioned on both sides of the wafer 22, respectively, and the upper lid 36 and the lower lid 38 of the heating chamber 30 may be positioned separately. (eg, the possible implementation shown in FIG. 6).
Such a modified design cannot heat the silicon carbide wafer 22 by heating with the electrode 20, but still belongs to the feasible aspect of the present invention, and therefore still belongs to the protection scope of the present invention.
That is, the electrode 20 can be applied to the present invention and fall within the scope of protection required by the present invention as long as it can be useful when applying an alternating electric field in the dielectric heating device 50 .

The combined high-speed annealing apparatus 10 according to the present invention optionally comprises a gas input unit 72 and a gas exhaust unit 74, the gas input unit 72 via an intake pipe connector 73, and the gas exhaust unit 74 via an exhaust pipe. By communicating with the chamber 32 of the heating chamber 30 via the connector 75, the chamber 32 of the heating chamber 30 can be maintained at a predetermined pressure.
Similarly, the combined rapid annealing apparatus 10 according to the invention also optionally comprises a measurement and control system 70 .
The measurement and control system 70 is a pneumatic and airflow control system and comprises a pressure sensing unit 76 and a controller 78 .
A pressure detection unit 76 is for measuring the air pressure in the chamber 32 of the heating chamber 30 .
The controller 78 is for controlling the operation of the gas input unit 72 and/or the gas discharge unit 74 according to the magnitude of the air pressure.

For example, the operating range of the air pressure and airflow control system described above is, for example, 0.1 atm to 10 atm.
The gas pressure is monitored by pressure sensing unit 76 .
In addition, the gas input unit 72 injects gas into the chamber 32 of the heating chamber 30 via the intake pipe connector 73 by setting the flow rate of the gas, and the exhaust pipe connector 75 is discharged by the gas discharge unit 74. Via, the gas is discharged from the chamber 32 of the heating chamber 30 .
Gas exhaust unit 74 is, for example, a vacuum pump. In detail, in the present invention, before the gas is introduced into the chamber 32 of the heating chamber 30, the chamber 32 of the heating chamber 30 is first evacuated by the gas discharge unit 74 so that the chamber 32 of the heating chamber 30 is in a vacuum state. After that, gas is introduced into the chamber 32 of the heating chamber 30 by the gas input unit 72 until the chamber 32 of the heating chamber 30 reaches a predetermined pressure.
The predetermined pressure range for chamber 32 of heating chamber 30 is 0.1 Atm to 10 Atm, and can be any numerical range or upper and lower endpoint values in the predetermined pressure range.
The above gases can be selected from pure gases such as nitrogen gas and argon gas, but any gas that can bring the chamber 32 of the heating chamber 30 into the set pressure range is the main gas. It belongs to the protection scope of the device.
In addition, in the present invention, the controller 78 can control or set the flow rate of the gas input to the gas input unit 72, and in conjunction with the operation of the gas discharge unit 74, the chamber 32 of the heating chamber 30 can be controlled as described above. can be held at a predetermined pressure of

Additionally, the measurement and control system described above optionally further comprises a pyrometer 79 for measuring the temperature of the chamber 32 of the heating chamber 30 .
The pyrometer 79 is, for example, an infrared pyrometer, but is not limited to this.
In the present invention, the emissivity of the wafer (e.g., silicon carbide) measured using a blackbody radiation source is 0.74, and by entering this value into the pyrometer 79, It can be used for any temperature measurement in the technology disclosed in the present invention.

The combined high-speed annealing apparatus according to the present invention has the following effects.
(1) Since the induction heating mechanism and the dielectric heating mechanism are combined, the conductor and the non-conductor can be heated at the same time, for example, the induction heating mechanism can raise the temperature of the silicon carbide wafer, and When the temperature of the wafer rises and the conductivity drops, the heating rate of the wafer can be kept constant by increasing the temperature of the silicon carbide wafer through a dielectric heating mechanism.

(2) The temperature of the electrodes can also be increased by an induction heating mechanism. As a result, when the temperature of the silicon carbide wafer rises and the conductivity drops, the silicon carbide wafer can be continuously heated by heating the electrode, and the heating rate of the silicon carbide wafer can be kept constant. can be held.

(3) The electrode can be used as a mounting pedestal and a heating pedestal.

(4) The heating chamber has a metal cylinder, which can be a reflective layer and can also be a Faraday shielding layer. Eddy currents can also be generated in the wafer by entering the heating chamber.

(5) Since there is a barrier layer positioned between the electrode and the wafer or between the wafers, it is possible to prevent the diffusion of contamination phenomena. The barrier layer can also be used as a mounting pedestal and heating pedestal.

The above description is by way of example only, and not by way of limitation. Any equivalent modification or alteration made thereto without departing from the spirit and scope of the invention is included in the appended claims.

10 combined high-speed annealing device 20 electrode 22 wafer
24 barrier layer
30 heating chamber 32 chamber 34 cavity 35 metal layer 36 upper lid 37 thermal insulation material layer 38 lower lid 40 induction heating device 42 inductance coil 50 dielectric heating device 52 RF power supply 54 adapter 60 metal cylinder 62 reflective layer 64 opening 66 Faraday shield layer 70 measurement and control system 72 gas input unit 73 intake pipe connector 74 gas discharge unit 75 exhaust pipe connector 76 pressure detection unit 78 controller 79 pyrometer AC alternating electromagnetic signal Φ magnetic flux _IEC eddy current S10 induction heating process S20 dielectric heating process

Claims (24)

two electrodes between which at least one workpiece is placed;
a heating chamber having a chamber for containing at least the workpiece;
an induction heating device that performs an induction heating process on the workpiece in the heating chamber, generates an induced magnetic field, and generates an eddy current in the workpiece, thereby heating the workpiece;
a dielectric heating device for performing a dielectric heating process on the workpiece in the heating chamber and generating an electric field between the two electrodes to heat the workpiece located between the two electrodes; ,
A composite high-speed annealing device comprising: The induction heating device heats the object and the two electrodes by performing the induction heating process on the object and the two electrodes in the heating chamber. , The combined high-speed annealing apparatus according to claim 1. Further comprising a Faraday shielding layer provided in the heating chamber, wherein the induction heating device forms the induced magnetic field in the chamber of the heating chamber through the Faraday shielding layer. Item 1. The combined high-speed annealing apparatus according to item 1. 4. The combined high-speed annealing apparatus of claim 3, wherein the Faraday shielding layer is a metal cylinder with multiple openings. 5. The combined high-speed annealing apparatus of claim 4, wherein the metal cylinder has a reflective surface to reduce radiant heat loss in the heating chamber. 6. The combined high-speed annealing apparatus of claim 5, wherein the reflective surface of the metal cylinder is further coated with a reflective layer. 2. The combined high-speed annealing apparatus according to claim 1, wherein at least one barrier layer is provided between said two electrodes and said workpiece. 2. The composite high-speed annealing apparatus according to claim 1, wherein there are a plurality of said workpieces, and at least one barrier layer is provided therebetween. 9. The method according to claim 7 or 8, characterized in that one of said barrier layer and said workpiece has a polycrystalline structure and the other of said barrier layer and said workpiece has a monocrystalline structure. Composite high-speed annealing equipment. The induction heating device and the dielectric heating device heat the object and the barrier layer by performing the induction heating step and the dielectric heating step on the object and the barrier layer. The combined high-speed annealing apparatus according to claim 7 or 8, characterized by heating. 2. The composite high-speed annealing apparatus according to claim 1, wherein said workpiece is selected from the group consisting of conductors and non-conductors. 2. The combined high-speed annealing apparatus according to claim 1, wherein said workpiece is a wafer. The composite high-speed annealing apparatus of claim 1, wherein the two electrodes are made of graphite. The induction heating device comprises an inductance coil wound around the heating chamber, the induction heating device applying a first alternating electromagnetic signal having a first predetermined frequency to the inductance coil to heat the workpiece. 2. The combined high-speed annealing apparatus according to claim 1, wherein said induced magnetic field is generated by said object and said two electrodes. 15. The combined high-speed annealing apparatus of claim 14, wherein the first predetermined frequency range is 50 kHz to 200 kHz. 3. The dielectric heating device according to claim 1, characterized in that said electric field is generated in said two electrodes located on opposite sides of said workpiece by applying a second alternating electromagnetic signal having a second predetermined frequency. 2. The composite high-speed annealing apparatus according to 1. 17. The multiple high-speed annealing apparatus of claim 16, wherein the second predetermined frequency range is 10MHz-900MHz. The dielectric heating device comprises an RF power supply and an adapter, the RF power supply supplying the second alternating electromagnetic signal having the second predetermined frequency, the adapter connecting the RF power supply and the second 17. The combined rapid annealing apparatus of claim 16, wherein the second electrode is positioned between and electrically connected to the two electrodes to reduce reflection of the second alternating electromagnetic signal. 2. The method according to claim 1, further comprising a gas input unit and a gas exhaust unit respectively communicating with said chamber of said heating chamber so that said chamber of said heating chamber is maintained at a predetermined pressure. A combined high speed annealing apparatus as described. 20. The combined high-speed annealing apparatus according to claim 19, wherein the predetermined pressure range of the chamber of the heating chamber is 0.1 atm to 10 atm. Further comprising a measurement and control system comprising a pressure detection unit and a controller, said pressure detection unit for measuring the air pressure in said chamber of said heating chamber, said controller said 20. The combined high-speed annealing apparatus according to claim 19, which controls the operation of , the gas input unit and/or the gas discharge unit. 22. The combined rapid annealing apparatus of claim 21, wherein said measurement and control system further comprises a pyrometer for measuring the temperature of said chamber of said heating chamber. The heating chamber comprises a cavity, an upper lid and a lower lid, the cavity being located between the upper lid and the lower lid and connecting them to form the cavity and the upper lid. and the lower cover, wherein the chamber is formed between them. [Claim 24] The composite high-speed annealing apparatus according to claim 23, wherein the material of the heating chamber is a quartz tube or a ceramic tube.