CN208111394U - Plasma filament gas ion source device - Google Patents
Plasma filament gas ion source device Download PDFInfo
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- CN208111394U CN208111394U CN201721875136.2U CN201721875136U CN208111394U CN 208111394 U CN208111394 U CN 208111394U CN 201721875136 U CN201721875136 U CN 201721875136U CN 208111394 U CN208111394 U CN 208111394U
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- ionization
- filament
- ionization cylinder
- cylinder
- ion source
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Abstract
The utility model relates to ion source apparatus technical fields, relate to a kind of plasma filament gas ion source device, including the first ionization cylinder and the second ionization cylinder, one end of first ionization cylinder is equipped with the first air inlet and the other end of the first ionization cylinder is equipped with the first escape orifice, it is wound with first coil on the lateral wall of first ionization cylinder, is equipped with filament assembly in the first ionization cylinder；One end of second ionization cylinder is connected to the first escape orifice, and the other end of the second ionization cylinder is equipped with the second escape orifice, is wound with the second coil on the lateral wall of the second ionization cylinder.The utility model passes through the first coil being wrapped in outside the first ionization cylinder and the second coil being wrapped in outside the second ionization cylinder, improve gas ionization efficiency, the foreign atom emitted simultaneously from filament can be captured by the first ionization medial wall of the tube, and foreign atom is avoided to pollute workpiece to be machined.
Description
Technical field
The utility model relates to ion source apparatus technical fields, more particularly to a kind of plasma filament gas ion source
Device.
Background technique
Lower temperature plasma technology be widely deployed in material surface processing, semiconductor, microelectronics, optics, medicine, etc.
Industrial circle, especially using very extensive in terms of thin-film material preparation and material surface modifying.Modification technology on the surface of the material
Field hot filament ion source can provide heating workpiece, etching activating surface and assisted deposition function, can also for ion implanting,
The suitable metallic element of the offers such as element doping, elemental gas ion source etc..But during filament thermal electron, itself
Surface atom can also emit, and pollute if being adsorbed on workpiece surface and will constitute.In addition current heated filament technology utilizes thermolamp
The electron collision gas of silk transmitting obtains ion, and gas ionization efficiency is lower.
Utility model content
To solve the above-mentioned problems, the purpose of the utility model is to provide a kind of plasma filament gas ion source dresses
It sets, can be improved gas ionization efficiency and foreign atom is avoided to pollute workpiece to be machined.
Based on this, the utility model provides a kind of plasma filament gas ion source device, including the first ionization cylinder
With the second ionization cylinder, the other end that one end of the first ionization cylinder is equipped with the first air inlet and the first ionization cylinder is equipped with the
One escape orifice is wound with first coil on the lateral wall of the first ionization cylinder, is equipped with filament assembly in the first ionization cylinder；
One end of the second ionization cylinder is connected to first escape orifice, and the other end of the second ionization cylinder is equipped with the second evolution
Mouthful, the second coil is wound on the lateral wall of the second ionization cylinder.
Preferably, the filament assembly includes the filament being oppositely arranged and reflection pole plate, the reflection pole plate is located at
Between the filament and the center line of the first escape orifice, it is connected in parallel between the filament and reflection pole plate.
Preferably, the reflection pole plate is parallel to the center line of first escape orifice.
Preferably, the quantity of the filament assembly is even number, and the filament assembly is symmetrical set.
Preferably, the material of the reflection pole plate is refractory metal.
Preferably, the first ionization cylinder and the second ionization cylinder are cylindrical in shape.
Preferably, the second ionization cylinder is equipped with the second air inlet.
Preferably, further include focus coil, the focus coil is located at except the second ionization cylinder and corresponding described the
The setting of two escape orifices, the axis of the focus coil is parallel with the axis of second escape orifice or is overlapped.
Preferably, second escape orifice is equipped with end casing, the second ionization cylinder and the end casing insulate,
The anode of the filament and the end casing are grounded setting.
The plasma filament gas ion source device of the utility model, the first ionization cylinder lateral wall are wound with First Line
Circle, the magnetic field that first coil generates make the electronics escaped from filament make rotation drift motion under the action of Lorentz force,
The travel of electronics and the probability of electronics and inert gas collision are increased, and then obtains the plasma of high ionization level,
Second ionization cylinder lateral wall is wound with the second coil, and the magnetic field that the second coil generates makes the electronics escaped from the first escape orifice exist
Continue to make rotation drift motion under the action of Lorentz force, yet further increase electronics travel and electronics with it is lazy
The probability of property gas collisions；In addition, the foreign atom emitted from filament is essentially neutral atom, not by electric field and magnetic
The effect of field, therefore be easy to capture precipitating by the inner wall of the first ionization cylinder, avoid foreign atom from polluting workpiece to be machined.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the plasma filament gas ion source device of the utility model embodiment.
Wherein, the 1, first ionization cylinder；11, the first air inlet；12, the first escape orifice；13, first coil；14, filament group
Part；14a, filament；14b, reflection pole plate；2, the second ionization cylinder；21, the second escape orifice；22, the second coil；23, the second air inlet
Mouthful；24, end casing；3, power supply device；4, dead ring；5, focus coil.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is not intended to limit the scope of the present invention for illustrating the utility model.
As shown in connection with fig. 1, the filament gas ion source dress of the cationic beam of the extraction of the utility model is schematically showed
It sets, including columnar first ionization cylinder 1, one end of the first ionization cylinder 1 is equipped with the first air inlet 11, can be passed through for protecting
The other end of filament 14a and inert gas for ionization, the first ionization cylinder 1 is equipped with the first escape orifice 12.First ionization
It is wound with first coil 13 on the lateral wall of cylinder 1, filament assembly 14 is equipped in the first ionization cylinder 1, filament assembly 14 includes opposite
The filament 14a and reflection pole plate 14b of setting, reflection pole plate 14b are located between filament 14a and the center line of the first escape orifice 12,
Since filament 14a and reflection pole plate 14b are connected in parallel, the current potential of the two is equal, towards reflection pole plate from filament 14a
The electrons of the direction 14b evolution (are directed toward the from the center line of the first escape orifice 12 in the direction reflected by reflection pole plate 14b reflection
The inner sidewall of one ionization cylinder 1), increase the travel of electronics with this, improves the probability of ionization by collision.Meanwhile first coil
13 magnetic fields generated force the electronics escaped from filament 14a to make rotation drift motion under the action of Lorentz force, further
The travel of electronics and the collision probability of inert gas and electronics are increased, to obtain the plasma of high ionization level.
In addition, being essentially neutral atom from the evaporated material that the surface filament 14a escapes, these neutral atoms are not by the work of electric and magnetic fields
With, therefore they can collide the inner wall of the first ionization cylinder 1 during exercise and reflect pole plate 14b and captured precipitating.Wherein, above-mentioned
Evaporated material is that the surface atom of satisfaction evolution work function on filament 14a can be made if evaporated material is adsorbed on the surface of workpiece
It is reduced at surface coating quality, and the inner wall for reflecting pole plate 14b and the first ionization cylinder 1 can all capture these evaporated materials,
It prevents it from escaping from the first escape orifice 12, avoids pollution workpiece to be machined.In order to further increase the density of plasma, that is, mention
High gas ionization rate.The present apparatus further includes columnar second ionization cylinder 2, one end of the second ionization cylinder 2 and the first escape orifice 12
Connection, the other end of the second ionization cylinder 2 are equipped with the second escape orifice 21, and the lateral wall of the second ionization cylinder 2 winds the second coil 22, the
On the one hand the magnetic field that two coil 22 generates forces charged particle (electronics and cation) to make rotation drift motion, increase and gas point
The collision probability (generating ionization by collision) of son, to improve the positive ion density in plasma, another aspect pack plasma
It is escaped from the second escape orifice 21 of the second ionization cylinder 2, provides plasma for workpiece to be machined.
It is additionally provided with the second air inlet 23 on the second ionization cylinder 2, the working gas needed for workpieces processing can be introduced second
In ionization cylinder 2 so that working gas is in the second ionization cylinder 2 and electron impact ionization, and working gas will not also adverse current into
Enter in the first ionization cylinder 1 and reacts with filament 14a and reflection pole plate 14b.In the present embodiment, the second ionization cylinder 2 is equipped with the
It is insulated on one end of two escape orifices 21 to be equipped with end casing 24, dead ring 4, lamp are equipped between end casing 24 and the second ionization cylinder 2
The anode of silk 14a and the setting of the equal electrical ground of end casing 24, cause the cathode of filament 14a and end casing 24 to form potential difference, from
The electrons of filament 14a evolution are automatically moved toward the direction where end casing 24, so that electrons are orderlyly from the
One ionization cylinder 1 moves to the second escape orifice 21, and the direction of motion of electronics is limited with this.
For the needs of processing, which further includes focus coil 5, and focus coil 5 is located at except the second ionization cylinder 2 and right
The second escape orifice 21 is answered to be arranged, the axis of the axis of focus coil 5 and the second escape orifice 21 is parallel or is overlapped, and focus coil 5 is used
The plasma escaped from the second escape orifice 21 or cationic beam are focused in generating magnetic field according to the demand of work pieces process, so as to
In the processing for meeting workpiece to be machined.
In the present embodiment, in order to optimize the device, reflection pole plate 14b is parallel to the center line of the first escape orifice 12.Lamp
Silk component 14 has even number, and filament assembly 14 is symmetrical set, and the reflection pole plate 14b of each filament assembly 14 can be right by its
The electron reflection for the filament 14a evolution answered enables electronics to extend the road of its movement as far as possible to the inner sidewall of the first ionization cylinder 1
Journey increases the probability of ionization by collision, to improve gas ionization rate.The hair of electronics greatly improved in two filament assemblies 14 in parallel
Penetrate quantity, moreover it is possible to balance its power consumption, the present apparatus is made to be unlikely to too to consume energy.The material for reflecting pole plate 14b is refractory metal, infusibility
Metal refers generally to fusing point higher than 1650 DEG C and has the metal (tungsten, tantalum, molybdenum, niobium, hafnium, chromium, vanadium, zirconium and titanium) of certain reserves, also has
The metal that fusing point is higher than zirconium fusing point (1852 DEG C) is known as refractory metal.Because the ionization energy of refractory metal atoms is higher, it is difficult to
Become ion, it can reflect the electronics of filament 14a evolution, will not also escape metal cation, pollute workpiece to be machined.First
The center line of ionization cylinder 1 and the second ionization cylinder 2 is overlapped, so that cation and electronics are generated by first coil 13 and the second coil 22
Magnetic field constraint, focus.
Wherein, the side wall of the second ionization cylinder 2 is electrically connected at the anode of power supply device 3, the first ionization cylinder 1 and the second ionization
It is connected between cylinder 2 by dead ring 4, when the side wall of the second ionization cylinder 2 disconnects power supply and is in floating current potential, the second evolution
It can get high-density plasma at mouth 21；When the side wall of the second ionization cylinder 2 powers on anode, the side wall of the second ionization cylinder 2
Current potential be higher than filament 14a current potential, the electronics moved in the second ionization cylinder 2 by the second ionization cylinder 2 side wall absorption goes forward side by side
In the circuit loop for entering power supply device 3, since electronics is all adsorbed by the side wall of the second ionization cylinder 2, at the second escape orifice 21
It can get the gas cations of high-purity.The current potential for changing 2 side wall of the second ionization cylinder by power supply device 3, can obtain height respectively
The plasma of density and the cationic beam of high-purity, to meet the needs of different occasions.
In conclusion the plasma filament gas ion source device of the utility model, the winding of the first ionization cylinder lateral wall
There is first coil, the magnetic field that first coil generates makes the electronics escaped from filament make rotation drift under the action of Lorentz force
Shifting movement, the probability that the travel and electronics and inert gas for increasing electronics collide, and then the high ionization level of acquisition etc.
Gas ions, the second ionization cylinder lateral wall are wound with the second coil, and the magnetic field that the second coil generates to escape from the first escape orifice
Electronics continue to make rotation drift motion under the action of Lorentz force, yet further increase electronics travel and
The probability of electronics and inert gas collision；In addition, the foreign atom emitted from filament is essentially neutral atom, not by
The effect of electric and magnetic fields, therefore be easy to capture precipitating by the inner wall of the first ionization cylinder, it avoids foreign atom from polluting and is processed work
Part.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
For art personnel, without deviating from the technical principle of the utility model, several improvement and replacement can also be made, these change
It also should be regarded as the protection scope of the utility model into replacement.
Claims (8)
1. a kind of plasma filament gas ion source device, which is characterized in that including the first ionization cylinder cylindrical in shape and
Two ionization cylinders, one end of the first ionization cylinder is equipped with the first air inlet and the other end of the first ionization cylinder is equipped with the first ease
It exports, first coil is wound on the lateral wall of the first ionization cylinder, is equipped with filament assembly in the first ionization cylinder；It is described
One end of second ionization cylinder is connected to first escape orifice, and the other end of the second ionization cylinder is equipped with the second escape orifice, institute
It states and is wound with the second coil on the lateral wall of the second ionization cylinder.
2. plasma filament gas ion source device according to claim 1, which is characterized in that the filament assembly packet
Include the filament that is oppositely arranged and reflection pole plate, the reflection pole plate between the filament and the center line of the first escape orifice,
It is to be connected in parallel between the filament and reflection pole plate.
3. plasma filament gas ion source device according to claim 2, which is characterized in that the reflection pole plate is flat
Row is in the center line of first escape orifice.
4. plasma filament gas ion source device according to claim 2, which is characterized in that the filament assembly
Quantity is even number, and the filament assembly is symmetrical set.
5. plasma filament gas ion source device according to claim 2, which is characterized in that the reflection pole plate
Material is refractory metal.
6. plasma filament gas ion source device according to claim 1, which is characterized in that the second ionization cylinder
It is equipped with the second air inlet.
7. plasma filament gas ion source device according to claim 1, which is characterized in that further include focal line
Circle, the focus coil is located at except the second ionization cylinder and the corresponding second escape orifice setting, the axis of the focus coil
Or coincidence parallel with the axis of second escape orifice.
8. plasma filament gas ion source device according to claim 1, which is characterized in that second escape orifice
It is equipped with end casing, the second ionization cylinder and the end casing insulate, and the anode of the filament and the end casing are grounded
Setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721875136.2U CN208111394U (en) | 2017-12-26 | 2017-12-26 | Plasma filament gas ion source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721875136.2U CN208111394U (en) | 2017-12-26 | 2017-12-26 | Plasma filament gas ion source device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208111394U true CN208111394U (en) | 2018-11-16 |
Family
ID=64131602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721875136.2U Active CN208111394U (en) | 2017-12-26 | 2017-12-26 | Plasma filament gas ion source device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208111394U (en) |
-
2017
- 2017-12-26 CN CN201721875136.2U patent/CN208111394U/en active Active
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