CN208078381U - Vertical plane cavity surface emitting laser - Google Patents
Vertical plane cavity surface emitting laser Download PDFInfo
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- CN208078381U CN208078381U CN201820410100.5U CN201820410100U CN208078381U CN 208078381 U CN208078381 U CN 208078381U CN 201820410100 U CN201820410100 U CN 201820410100U CN 208078381 U CN208078381 U CN 208078381U
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Abstract
This disclosure relates to a kind of vertical plane cavity surface emitting laser.The vertical plane cavity surface emitting laser includes：The first mirror layer, active layer and the second mirror layer being stacked in order, second mirror layer are located at light emission side, and first mirror layer is located at non-light emission side, it is characterised in that：First mirror layer includes the metal mirror layer positioned at non-light emission side and the first Bragg reflection mirror layer between metal mirror layer and active area；And second mirror layer includes the second Bragg reflection mirror layer.The vertical plane cavity surface emitting laser of the disclosure can improve the performance of vertical plane cavity surface emitting laser.
Description
Technical field
The embodiments of the present invention are related to semiconductor laser more particularly to a kind of vertical plane cavity surface emitting laser
(VCSEL) and preparation method thereof.
Background technology
Vertical plane cavity surface emitting laser (VCSEL) is as a kind of novel semiconductor laser, with common edge
Emitting laser is compared, have threshold current is low, efficient, small power consumption, the light angle of divergence are small, easily with fiber coupling, easy of integration etc.
Advantage all has broad application prospects in optical information processing, optical interconnection, optical oomputing, illumination, display etc..
Semiconductor laser structure can be simplified to by the speculum of material layer and both ends with gain characteristic.Vertically
Face cavity surface emitting laser (VSCEL's) is particular in that：It is divided using high low refractive index material layer periodic arrangement
Cloth Bragg mirror (DBR), and gain material layer is located among upper and lower speculum and and mirror parallel.In a kind of allusion quotation
It is the P made of the different semi-conducting material alternating growth of multipair high low-refraction below p side electrode in the vcsel structure of type
Type distributed bragg reflector mirror (DBR), the lower sections p-type DBR are active areas, e.g. several nanometers of quantum well structure, to obtain
Obtain high-gain.It is N-type DBR below active area, bottom is substrate.
In prepared by current VCSEL devices, for the gain for obtaining high, it usually needs grow multipair Bragg mirror
(DBR), generally at 30 pairs or more, there are epitaxial growth difficulty, series resistances to increase for this DBR crafts, thermal losses exacerbation and light
A series of deficiencies such as loss increase.
Utility model content
The embodiments of the present invention are intended to provide a kind of vertical plane cavity surface emitting laser (VCSEL), at least can
Enough overcome the problems, such as in the prior art at least one, the performance of raising vertical plane cavity surface emitting laser.
According to the embodiment of the utility model one side, a kind of vertical plane cavity surface emitting laser is provided, including：
The first mirror layer, active layer and the second mirror layer being stacked in order, second mirror layer position
In light emission side, first mirror layer is located at non-light emission side, it is characterised in that：
First mirror layer include positioned at non-light emission side metal mirror layer and between metal mirror layer with have
First Bragg reflection mirror layer between active layer；And
Second mirror layer includes the second Bragg reflection mirror layer.
An example embodiment according to the present utility model, the first Bragg reflection mirror layer include 1-15 period
Alternately arranged high refractive index material layer and low refractive index material layer preferably include the alternately arranged high refraction in 1-10 period
Rate material layer and low refractive index material layer more preferably include the alternately arranged high refractive index material layer in 1-5 period and low folding
Penetrate rate material layer.
An example embodiment according to the present utility model, the second Bragg reflection mirror layer include the alternating in 5-30 period
The high refractive index material layer and low refractive index material layer of arrangement.
An example embodiment according to the present utility model, the vertical plane cavity surface emitting laser, further includes setting
Set the non-light emission side of metal mirror layer first electrode layer and be arranged the second Bragg reflection mirror layer light emission side the
Two electrode layers.
An example embodiment according to the present utility model, the vertical plane cavity surface emitting laser, further includes setting
Set the oxidization isolation layer between active layer and the second Bragg reflection mirror layer.
An example embodiment according to the present utility model, the metal mirror layer include Cu mirror layers, Ag reflections
Mirror layer or Au mirror layers.
According to the vertical plane cavity surface emitting laser (VCSEL) and preparation method thereof of each embodiment of the utility model,
Metal mirror layer is set by the back side in lower layer DBR, to replace part DBR, it is possible to reduce the week of lower layer's DBR speculums
Issue increases reflection efficiency, improves gain, while can obtain better thermal stability, and reduce threshold current density.
It is below in conjunction with the accompanying drawings and specific real in order to keep the purpose of this utility model, feature and advantage more obvious and easy to understand
Applying example, the utility model is described in further detail.
Description of the drawings
Fig. 1 is the part knot of the vertical plane cavity surface emitting laser of an exemplary embodiment according to the present utility model
The schematic cross-section of structure；
Fig. 2 is the schematic cross-section for the vertical plane cavity surface emitting laser shown in FIG. 1 for containing electrode structure；With
Fig. 3 is to show to prepare the section of the device architecture during the vertical plane cavity surface emitting laser of Fig. 1 and 2 to show
It is intended to, the device architecture before peeling liner bottom is shown.
Specific implementation mode
In the following detailed description, for ease of explaining, many concrete details are elaborated, present disclosure is implemented with providing
The comprehensive understanding of example.It should be apparent, however, that one or more embodiments without these specific details can also be by reality
It applies.In other cases, well known construction and device is omitted to simplify attached drawing.Also, in all the appended drawings, identical attached drawing
Label is for indicating identical component.
Fig. 1 is 100 part of vertical plane cavity surface emitting laser of an exemplary embodiment according to the present utility model
The schematic cross-section of structure.As shown in Figure 1, the vertical plane cavity surface emitting laser (VCSEL) 100 includes mainly：First is anti-
It penetrates mirror layer 10, the second mirror layer (the second Bragg reflection mirror layer) 20 and is clipped in the first mirror layer 10 and the second mirror layer
Active layer 30 between 20.Second mirror layer 20 is located at light emission side (upside in figure), the first mirror layer 10 be located at it is non-go out
Light side (downside in figure).Here, light emission side refers to the side that VCSEL devices send out laser, and non-light emission side is VCSEL devices
The side opposite with light emission side.First mirror layer 10 includes 11 He of metal mirror layer positioned at non-light emission side being stacked
Positioned at the first Bragg reflection mirror layer 12 of light emission side.Second mirror layer 20 is made of the second Bragg reflection mirror layer.
According to some embodiments, active layer 30 includes quantum well structure, such as including InGaAs/AlGaAs, InGaAs/
GaAs, GaInP/AlGaInP, GaAsP/AlGaAsP quantum well structure.Those skilled in the art can be according to desired VCSEL devices
The material system and quantum well structure of the target wavelength specific choice active layer of part.It is the VCSEL of 650nm or so with optical maser wavelength
For：In order to be matched as possible with GaAs (substrate), and quantum efficiency is made to reach maximum value, active area materials use
(AlxGa1-x)0.51In0.49P, wherein barrier material are (Al0.33Ga0.67)0.51In0.49P, potential well material are GaInP, in Quantum Well
Lower both sides are space layers, and material is (Al0.55Ga0.45)0.51In0.49P.In order to be matched with GaAs substrate lattices, DBR material selections
AlGaAs.There are a limiting factors to device performance for this material system：Material as DBR speculums, it is desirable that cannot inhale
The light (650~700nm) of excitation wavelength is received, this just needs DBR compositions to use A10.5Ga0.5As/AlAs or similar combinations.But
This results in the refringences of two kinds of materials of mirror layer just not big enough, it is therefore desirable to which more DBR layer numbers reach desired
Reflectivity.Furthermore 0.5 Al components are precisely thermal resistance and the maximum Al components of resistance in AlGaAs materials, this will cause more
Big fuel factor.And the dbr structure with metal mirror layer of the utility model embodiment is used, it can eliminate or greatly
Reduce these limiting factors.
According to some embodiments, metal mirror layer 11 may include having high reflectance and good such as Cu, Ag, Au
The metal material of Ohmic contact or its combination of materials, thickness are for example, 50nm or so.First Bragg reflection mirror layer 12 is wrapped
Include at least a pair of alternately arranged high refractive index material layer and low refractive index material layer.Second Bragg reflection mirror layer 20 includes more
To periodically alternately arranged high refractive index material layer and low refractive index material layer.First Bragg reflection mirror layer 12 and second
The specific material of Bragg reflection mirror layer 20 it is normal can to generally select lattice depending on VCSEL active area materials and excitation wavelength
Number matching, string resistance is small, has the material preparation dbr structure of height reflection differences in excitation wavelength attachment.DBR layer number requires reflection
Rate is 90% or more.
According to some embodiments, the first Bragg reflection mirror layer 12 and the second Bragg reflection mirror layer 20 can be according to substrate classes
Type selects the Al of N-type or p-typexGa1-xAs/AlyGa1-yThe materials such as As or GaInP/GaAs, but both materials are not limited to, with
It is respectively formed the mirror layer Wavelength matched with active layer 30.First Bragg reflection mirror layer 12 and the second Bragg reflection mirror layer
20 periodicity can be set between 5-30 according to actual needs.It is for the InGaAsP bases VCSEL of 940nm with optical maser wavelength
The Al0.92GaAs/Al0.15GaAs structures in 20 periods can be used in example, upper layer DBR；For the GaN base that optical maser wavelength is 405nm
The Ta205/SiO2 structures in 8 periods can be used in VCSEL, upper layer DBR.
According to the vertical plane cavity surface emitting laser (VCSEL) of the utility model embodiment, pass through the back of the body in lower layer DBR
Metal mirror layer is arranged in surface side (non-light emission side), can substantially reduce the periodicity of lower layer's DBR speculums, increases reflection efficiency
(especially infrared band) improves gain, while can obtain better thermal stability, and reduces threshold current density, from
And greatly improve the performance of VCSEL devices.Further, since the number of plies of the DBR speculums of epitaxial growth is needed to reduce, it can also
It improves the production efficiency of VCSEL devices and reduces the cost for preparing VCSEL devices.Further, metal mirror layer can be simultaneous
Make the ohmic contact layer between metal electrode and semiconductor, so as to save the step of preparing individual ohmic contact layer.
It is common for the GaInAs/GaAs VCSEL of 940nm with excitation wavelength in a specific example
For Al0.15Ga0.8As/Al0.9Ga0.1As structures DBR, to reach 99.5% or more reflectivity, at least need for 21 week
Phase；To reach 99.9% reflectivity, then 27 more than the period are needed.According to Ag metal films as metal mirror layer, by
96% is all higher than within the scope of 400~2000nm in the reflectivity of Ag metal films.Therefore, increase Ag metal films at the back side of DBR
As metal mirror layer, it is only necessary to which the DBR in 1 period ensures that overall reflectivity is more than 99.9%.
According to the device electro-optical transfer efficiency formula of VCSEL：
Wherein, IthIndicate that threshold current density, Rs indicate series resistance, V0Indicate the cut-in voltage of device, h is Planck
Constant, v are that VCSEL devices go out optical wavelength respective frequencies, ηdIndicate the optics effect of device when ideally active layer thickness is d
Rate, q are charge coefficients, and I is the Injection Current of device.
Using the dbr structure with metal mirror layer of the utility model embodiment, Rs can be greatly reduced, bring
VCSEL device synthesis performance boosts.The reason is as follows that：First, influence of the reflectivity to threshold current density is very big, usual bottom
Reflectivity improves 0.01, so that it may to reduce by hundreds of peaces threshold current density every square centimeter, therefore threshold current be greatly reduced
Density Ith；The increase of second, DBR thickness can increase the series resistance Rs of device, reduce the transfer efficiency of device, pass through metallic reflection
DBR can be reduced to 1 period by mirror under the conditions of being remained above 99.9% reflectivity from nearly 30 periods, can substantially be dropped
Low device inside series resistance, improves the transfer efficiency of device；Third, vertical plane cavity surface emitting laser is to institute after galvanization
The heat of generation is quite sensitive, and the series resistance of device can be greatly reduced simultaneously by reducing DBR periodicities, reduce the thermal effect of device
It answers, prompts device performance and stability.
According to some embodiments, the first Bragg reflection mirror layer 12 may include the alternately arranged high folding in 1-15 period
Rate material layer and low refractive index material layer are penetrated, the alternately arranged high refractive index material layer in 1-10 period and low folding are preferably included
Rate material layer is penetrated, the alternately arranged high refractive index material layer and low refractive index material layer in 1-5 period are more preferably included.Second
Bragg reflection mirror layer 20 may include the alternately arranged high refractive index material layer and low refractive index material layer in 5-30 period.
As shown in Figure 1, can also include setting according to the vertical plane cavity surface emitting laser 100 of the utility model embodiment
Set the oxidization isolation layer 40 between active layer 30 and the second Bragg reflection mirror layer 20.Oxidization isolation layer 40 can select to be easy to
Realize the material of oxidation and control oxidation rate.
Fig. 2 is the schematic cross-section for the vertical plane cavity surface emitting laser 100 shown in FIG. 1 for containing electrode structure.
As shown in Fig. 2, vertical plane cavity surface emitting laser 100 further include be arranged metal mirror layer 11 non-light emission side first
Electrode layer 50 and the second electrode lay 60 in the light emission side of the second Bragg reflection mirror layer 20 is set.First electrode layer 50 and second
Electrode layer 60 for example can be used Ag/NiAg alloys and be made respectively on the surface of metal mirror layer 11 and the second DBR layer 20, later
Light-emitting window 70 can be etched in the second DBR layer 20 and the second electrode lay 60 as needed.
Fig. 1 and Fig. 2 is the vertical plane chamber surface emitting for schematically illustrating one embodiment according to the present utility model
The structure of laser 100.Skilled person will appreciate that vertical plane cavity surface emitting laser 100 can also include other
Necessary layer structure, such as ohmic contact layer, passivation protection layer etc. known to field, the utility model is without limitation.
Fig. 3 is section for showing to prepare the device architecture during the vertical plane cavity surface emitting laser 100 of Fig. 1 and 2
Face schematic diagram, wherein illustrating only the device architecture before peeling liner bottom.Illustrate to prepare vertical plane chamber surface referring to Fig. 1-3
The process of emitting laser 100.
As shown in figure 3, providing substrate 80 first.According to the target wavelength of desired VCSEL devices, the material of substrate 80 can
To select GaAs, SiC, InP or other materials.
Then, epitaxial growth sacrificial layer 90, the first Bragg reflection mirror layer 12, active layer 30 and successively on substrate 80
Two Bragg reflection mirror layer 20.Epitaxial growth sacrificial layer 90, the first Bragg reflection mirror layer 12, active layer 30 and second Prague
Common process can be used in the technique of mirror layer 20, and details are not described herein.
The material to differ greatly with the material corrosion rate of substrate 80 and the first Bragg reflection mirror layer 12 may be selected in sacrificial layer 90
Material is to realize selective corrosion.Optionally, sacrificial layer 90 can also be inserted into the centre of the first Bragg reflection mirror layer 12, without office
It is limited between substrate and DBR.First Bragg reflection mirror layer 12 can be according to the AlxGa1- of substrate growth selection N-type or p-type
The materials such as xAs/AlyGa1-yAs or GalnP/GaAs, periodicity can be set between 1-15 according to actual needs, preferably
It may be provided between 1-10, more preferably may be provided between 1-5.Active layer 30 includes InGaAs/AlGaAs, InGaAs/GaAs,
The quantum well structure of the materials such as GaInP/AlGaInP, GaAsP/AlGaAsP composition, the logarithm at Quantum Well/base pair may be selected
Between 2 pairs to 5 pairs.The material of second Bragg reflection mirror layer 20 can be AlxGa1-xAs/AlyGa1-yAs or GaInP/GaAs materials
Material, but both materials are not limited to, periodicity can be between 5-30, to be formed and the Wavelength matched speculum of active layer 30
Layer.
Optionally, oxidization isolation layer can be epitaxially-formed between active layer 30 and the second Bragg reflection mirror layer 20
40.Oxidization isolation layer 40 may be selected to be easily achieved oxidation and control the material of oxidation rate, such as AlAs, pass through the vapor of heat
It is prepared by wet process oxidation technology.
Then, sacrificial layer 90 is removed using etching process, substrate 80 is removed from the first Bragg reflection mirror layer 12.
Then, in the 12 surface deposited metal mirror layer 11 of the first Bragg reflection mirror layer for having removed sacrificial layer 90.Gold
The material for belonging to mirror layer 11 can be that Au, Ag, Cu or its combination of materials are formed, and there is high reflectance and good ohm to connect
It touches.The process deposits such as electron beam evaporation, thermal evaporation, sputtering metal mirror layer 11 can be used.
The layer structure of vertical plane cavity surface emitting laser 100 shown in FIG. 1 is formd after the above step.
Later, as shown in Fig. 2, making the away from the side of the first Bragg reflection mirror layer 12 in metal mirror layer 11
One electrode layer 50, and in the second Bragg reflection mirror layer 30 the second electrode lay 60 is made away from the side of active layer 30.It can electricity
The techniques such as beamlet evaporation, magnetic control, plating make first electrode layer 50 and Cu, Ag etc. can be selected in the second electrode lay 60, electrode material
Conductive material.The sequence for making first electrode layer 50 and the second electrode lay 60 does not limit, and can first make first electrode layer 50,
Then the second electrode lay 60 is made；Or vice versa.
Then, light-emitting window 70 can be etched in the second DBR layer 20 and the second electrode lay 60 as needed.Light window can
Mask process selective etching is used with figure according to actual needs.
The layer structure of vertical plane cavity surface emitting laser 100 shown in Fig. 2 is formd after the above step.Ability
Field technique personnel are it is found that vertical plane cavity surface emitting laser 100 can also include other necessary layer knots known in the art
Structure, such as ohmic contact layer, passivation protection layer etc., the utility model is without limitation.
The extension that the utility model embodiment uses removes vcsel structure film, and then deposited metal is anti-on lower layer DBR
Mirror is penetrated to reduce the technology of DBR layer thickness, can with but be not limited to apply in InGaAs/GaAs, A1GaAs/GaAs, GaInP/
In the VCSEL device technologies such as A1GaInP and GaN base.
Illustrate the mistake for the vertical plane cavity surface emitting laser 100 for making the utility model below by way of specific example
Journey.
Example one：
Using N-type GaAs substrates as substrate, epitaxial growth AlAs removes sacrificial layer, N-type DBR layer, multilayer successively thereon
Active layer, oxidization isolation layer and the p-type DBR of quantum well constitution.Wherein, N-type DBR is formed using the GaInP/GaAs in 5 periods,
P-type DBR is formed using the GaInP/GaAs in 20 periods.Then, the device layer and substrate of extension are realized using selective etching
Stripping.Use Ag as material, the surfaces N-type DBR after stripping prepare metallic mirror.It is anti-in metal using Ag/NiAg alloys
It penetrates mirror and p-type DBR layer surface makes electrode respectively, last etching light window as needed.
Example two：
Substrate Sapphire Substrate, the A1N/GaN DBR layers in first 10 periods of extension on it, then growth AlAs strippings successively
A1N/GaN DBR layers, the In0.2Ga0.8N/GaN Quantum Well/potential barrier storehouse in 10 periods from sacrificial layer, 10 periods (wrap
Structure containing cavity mold), oxidization isolation layer, the upper layers the Ta2O5/SiO2 DBR in 8 periods.Then, extension is realized using selective etching
The stripping of device layer and substrate.Use Ag as material, the surfaces lower layer DBR after stripping prepare metallic mirror.Using Ag/
NiAg alloys make electrode respectively in metallic mirror and upper layer DBR layer surface, last etching light window as needed.
As described above, the embodiments of the present invention replace part or all of DBR by using metallic mirror, can subtract
The periodicity of few DBR speculums, simplifies device architecture；Increase reflection efficiency, improve gain, while it is steady to obtain preferably heat
It is qualitative, and reduce threshold current density；Epitaxial layer transfer may be implemented using the method for substrate desquamation and make metallic reflection
Mirror can realize that scale is integrated in conjunction with epitaxial layer transfer and bonding technology.In addition, the utility model is thinned epitaxial thickness and reduction
Growth time, can achieve the purpose that reduce cost.
Above-described embodiment it is merely exemplary illustrate the principles of the present invention and construction, it is new not for this practicality is limited
Type, it will be understood by those skilled in the art that without departing from the general plotting of the utility model, to the utility model institute
Any changes and improvements made are all in the scope of the utility model.The scope of protection of the utility model, should be such as the power of the application
Subject to the range that sharp claim is defined.It should be noted that word " comprising " is not excluded for other element or steps, word " one " or " one
It is a " be not excluded for it is multiple.In addition, any element label of claim should not be construed as limitation the scope of the utility model.
Claims (8)
1. a kind of vertical plane cavity surface emitting laser, including：
The first mirror layer, active layer and the second mirror layer being stacked in order, second mirror layer are located at
Light side, first mirror layer are located at non-light emission side, it is characterised in that：
First mirror layer includes positioned at the metal mirror layer of non-light emission side and between metal mirror layer and active layer
Between the first Bragg reflection mirror layer；And
Second mirror layer includes the second Bragg reflection mirror layer.
2. vertical plane cavity surface emitting laser according to claim 1, wherein the first Bragg reflection mirror layer packet
Include the alternately arranged high refractive index material layer and low refractive index material layer in 1-15 period.
3. vertical plane cavity surface emitting laser according to claim 1, wherein the first Bragg reflection mirror layer packet
Include the alternately arranged high refractive index material layer and low refractive index material layer in 1-10 period.
4. vertical plane cavity surface emitting laser according to claim 1, wherein the first Bragg reflection mirror layer packet
Include the alternately arranged high refractive index material layer and low refractive index material layer in 1-5 period.
5. vertical plane cavity surface emitting laser according to claim 1, wherein the second Bragg reflection mirror layer includes 5-
The alternately arranged high refractive index material layer and low refractive index material layer in 30 periods.
6. vertical plane cavity surface emitting laser according to claim 1, further includes being arranged in the non-of metal mirror layer
The first electrode layer of light emission side and the second electrode lay in the light emission side of the second Bragg reflection mirror layer is set.
7. vertical plane cavity surface emitting laser according to claim 4 further includes being arranged in active layer and the second Bradley
Oxidization isolation layer between lattice mirror layer.
8. the vertical plane cavity surface emitting laser according to any one of claim 1-7, wherein
The metal mirror layer includes Cu mirror layers, Ag mirror layers or Au mirror layers.
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| CN201820410100.5U CN208078381U (en) | 2018-03-23 | 2018-03-23 | Vertical plane cavity surface emitting laser |
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| CN201820410100.5U CN208078381U (en) | 2018-03-23 | 2018-03-23 | Vertical plane cavity surface emitting laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165550A (en) * | 2019-05-31 | 2019-08-23 | 度亘激光技术（苏州）有限公司 | A kind of preparation method and vertical cavity surface emitting laser of distribution Bragg reflector |
| CN111416276A (en) * | 2019-01-08 | 2020-07-14 | 晶连股份有限公司 | Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group |
| CN115117735A (en) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | Laser, light source module and laser radar |
-
2018
- 2018-03-23 CN CN201820410100.5U patent/CN208078381U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416276A (en) * | 2019-01-08 | 2020-07-14 | 晶连股份有限公司 | Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group |
| CN110165550A (en) * | 2019-05-31 | 2019-08-23 | 度亘激光技术（苏州）有限公司 | A kind of preparation method and vertical cavity surface emitting laser of distribution Bragg reflector |
| CN115117735A (en) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | Laser, light source module and laser radar |
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