CN111416276A - Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group - Google Patents
Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group Download PDFInfo
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- CN111416276A CN111416276A CN201910017115.4A CN201910017115A CN111416276A CN 111416276 A CN111416276 A CN 111416276A CN 201910017115 A CN201910017115 A CN 201910017115A CN 111416276 A CN111416276 A CN 111416276A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Abstract
The invention provides a vertical resonant cavity surface emitting laser with a single distributed Bragg reflector group, wherein an n-type contact metal layer and an epitaxial structure are respectively formed on a lower surface and an upper surface of a compound semiconductor substrate. The epitaxial structure includes a single distributed Bragg reflector group, an active layer and an upper current confinement layer. The single distributed Bragg reflector group is an n-type distributed Bragg reflector group. The active layer is formed on the single distributed Bragg reflector group. A current confinement layer is formed over the active layer. The current confinement layer includes a peripheral oxidized current confinement region and a central unoxidized opening region. The p-type contact metal reflecting layer is formed on the epitaxial structure and is in contact with the epitaxial structure. Wherein the single distributed Bragg reflector group and the p-type contact metal reflective layer are an n-type reflective structure and a p-type reflective structure of the VCSEL under and above the active layer, respectively.
Description
Technical Field
The present invention relates to a vertical cavity surface emitting laser, and more particularly, to a vertical cavity surface emitting laser having a single distributed bragg reflector group.
Background
Please refer to fig. 14, which shows an embodiment of a conventional vcsel. The vertical cavity surface emitting laser of the related art includes: a p-type compound semiconductor substrate 902, a p-type contact metal layer 901, a p + -type cladding layer 903, a p-type distributed bragg reflector group 907, a p-type cladding layer 908, an active layer 909, a lower n-type cladding layer 910, a current confinement layer 911, an upper n-type cladding layer 914, an n-type distributed bragg reflector group 921, an n + -type cladding layer 918, an n-type contact metal layer 919, a dielectric isolation layer 920 and a trench 922. Wherein a p-type contact metal layer 901 is formed on a lower surface of a p-type compound semiconductor substrate 902. A p + -type cladding layer 903 is formed on an upper surface of the p-type compound semiconductor substrate 902. A p-type distributed Bragg reflector group 907 is formed over the p + -type cladding layer 903. A p-type cladding layer 908 is formed on the p-type distributed Bragg reflector group 907. An active layer 909 is formed on the p-type cladding layer 908. A lower n-type cladding layer 910 is formed over the active layer 909. A current confined layer 911 is formed on the lower n-type cladding layer 910. An upper n-type cladding layer 914 is formed over the current confined layer 911. An n-type distributed Bragg reflector group 921 is formed over the upper n-type cladding layer 914. An n + -type cladding layer 918 is formed over the n-type distributed bragg reflector group 921. Wherein the group 907 of p-type distributed bragg reflectors is formed by stacking about thirty p-type distributed bragg reflectors 906. Each p-type distributed Bragg reflector 906 includes a p-type aluminum arsenide layer 905 and a p-type aluminum gallium arsenide layer 904, wherein the p-type aluminum arsenide layer 905 is formed on the p-type aluminum gallium arsenide layer 904. Wherein the n-type distributed bragg reflector group 921 is formed by stacking about thirty n-type distributed bragg reflectors 917. Each of the n-type DBRs 917 includes an n-type AlGaAs layer 915 and an n-type AlGaAs layer 916, wherein the n-type AlGaAs layer 916 is formed on the n-type AlGaAs layer 915. The trench 922 penetrates at least the n + type cladding layer 918, the n-type distributed bragg reflector group 921, the upper n-type cladding layer 914 and the current confining layer 911, such that the current confining layer 911 is exposed by the trench 922 before the dielectric isolation layer 920 is formed. The exposed portion of the current confinement layer 911 in the trench 922 may be in contact with oxygen, and oxidized to form a peripheral oxidized current confinement region 912; and a central unoxidized open area 913 is the unoxidized area of the current confined layer 911. The dielectric isolation layer 920 is at least formed on the inner surface of the trench 922, and the dielectric isolation layer 920 at least covers the exposed peripheral oxidation current confinement region 912 of the current confinement layer 911, so that the peripheral oxidation current confinement region 912 of the current confinement layer 911 is not oxidized any more. An n-type contact metal layer 919 is formed over the n + -type cladding layer 918. The light exit direction of the prior art vcsel is upward (indicated by the arrow in fig. 14). Since the conventional vcsel has an n-type reflective structure (n-type distributed bragg reflector group 921) and a p-type reflective structure (p-type distributed bragg reflector group 907) at the top and bottom, the epitaxial structure of the n-type distributed bragg reflector group 921 and the p-type distributed bragg reflector group 907 has about one hundred twenty layers. Such a multilayer epitaxial structure may accumulate excessive stress, and the accumulated stress may cause warpage of the p-type compound semiconductor substrate 902. Especially, the larger the substrate size is, the more obvious the substrate warpage phenomenon is, which is a difficult problem to overcome. And the stress also affects the characteristics of the vcsel. Further, as the number of epitaxial structure layers increases, the higher the epitaxial quality of the upper layer, the more difficult it is to maintain, which also affects the characteristics of the vertical cavity surface emitting laser.
Disclosure of Invention
In view of the above, the inventor has developed a design with simple assembly, which can avoid the above disadvantages, is convenient to install, and has the advantage of low cost, so as to take account of both flexibility and economy.
To solve the above-mentioned problems and achieve the desired effect, the present invention provides a vertical cavity surface emitting laser having a single distributed bragg reflector group, comprising: a compound semiconductor substrate, an n-type contact metal layer, an epitaxial structure and a p-type contact metal reflection layer. The compound semiconductor substrate has an upper surface and a lower surface. An n-type contact metal layer is formed on the lower surface of the compound semiconductor substrate. The epitaxial structure is formed on the upper surface of the compound semiconductor substrate. Wherein the epitaxial structure includes: a single distributed Bragg reflector group, an active layer and an upper current confinement layer. A single distributed Bragg reflector group is formed on the upper surface of the compound semiconductor substrate, the single distributed Bragg reflector group being an n-type distributed Bragg reflector group. The active layer is formed on the single distributed Bragg reflector group. An upper current confinement layer is formed over the active layer. The upper current confinement layer includes an upper peripheral oxidized current confinement region and an upper central unoxidized opening region. The p-type contact metal reflecting layer is formed on the current limiting layer on the epitaxial structure and is in contact with the epitaxial structure, wherein the single distributed Bragg reflector group is an n-type reflecting structure of the vertical resonant cavity surface emitting laser below the active layer, and the p-type contact metal reflecting layer is a p-type reflecting structure of the vertical resonant cavity surface emitting laser above the active layer. The vertical resonant cavity surface emitting laser with the single distributed Bragg reflector group only has the single distributed Bragg reflector group (n type), and the high reflectivity of the p type contact metal reflecting layer is used for replacing the p type distributed Bragg reflector group in the prior art, so that the layer number of an epitaxial structure is reduced, the accumulation of excessive stress is reduced, and the quality of the epitaxial is improved.
In an embodiment of the foregoing vertical cavity surface emitting laser having a single distributed bragg reflector group, the p-type contact metal reflective layer has a reflectivity, wherein the reflectivity is greater than or equal to 95%.
In an embodiment, the vcsel having the single distributed bragg reflector group has a through hole penetrating through the compound semiconductor substrate, wherein the through hole has a downward opening, wherein a bottom of the through hole is defined by the single distributed bragg reflector group, and wherein the through hole is located below a region corresponding to the upper central unoxidized opening.
In an embodiment of the above-mentioned vcsel with a single distributed bragg reflector group, the epitaxial structure further includes a lower p-type cladding layer, wherein the lower p-type cladding layer is formed on the active layer, and the upper current confinement layer is formed on the lower p-type cladding layer.
In an embodiment of the aforementioned vcsel with a single distributed bragg reflector group, the epitaxial structure further includes a p + cladding layer, wherein the p + cladding layer is formed on the upper current confinement layer, and the p-contact metal reflective layer is formed on the p + cladding layer of the epitaxial structure.
In an embodiment of the foregoing vcsel having a single distributed bragg reflector group, the p + cladding layer includes a p + aluminum arsenide sublayer and a p + gallium arsenide sublayer, wherein the p + aluminum arsenide sublayer is formed on the upper current confinement layer, the p + gallium arsenide sublayer is formed on the p + aluminum arsenide sublayer, and the p contact metal reflective layer is formed on the p + gallium arsenide sublayer.
In an embodiment of the aforementioned vcsel with a single distributed bragg reflector group, the epitaxial structure further includes an upper p-type cladding layer, wherein the upper p-type cladding layer is formed on the upper current confinement layer, and the p-type contact metal reflective layer is formed on the upper p-type cladding layer of the epitaxial structure.
In an embodiment of the aforementioned vcsel with a single distributed bragg reflector group, the epitaxial structure further includes a p + cladding layer, wherein the p + cladding layer is formed on the upper p cladding layer, and the p contact metal reflective layer is formed on the p + cladding layer of the epitaxial structure.
In an embodiment of the foregoing vcsel with a single distributed bragg reflector group, the p + cladding layer includes a p + aluminum arsenide sublayer and a p + gallium arsenide sublayer, wherein the p + aluminum arsenide sublayer is formed on the upper p cladding layer, the p + gallium arsenide sublayer is formed on the p + aluminum arsenide sublayer, and the p contact metal reflective layer is formed on the p + gallium arsenide sublayer.
In an embodiment of the invention, the vertical cavity surface emitting laser having the single distributed bragg reflector group further includes an n + type cladding layer formed on the upper surface of the compound semiconductor substrate, and the single distributed bragg reflector group is formed on the n + type cladding layer.
In an embodiment of the foregoing vertical cavity surface emitting laser having a single distributed bragg reflector group, the n + -type cladding layer includes an n + -type aluminum arsenide sublayer and an n + -type gallium arsenide sublayer, wherein the n + -type gallium arsenide sublayer is formed on the upper surface of the compound semiconductor substrate, the n + -type aluminum arsenide sublayer is formed on the n + -type gallium arsenide sublayer, and the single distributed bragg reflector group is formed on the n + -type aluminum arsenide sublayer.
In an embodiment, the vcsel having the single distributed bragg reflector group has a via hole penetrating through the compound semiconductor substrate, wherein the via hole has a downward opening, wherein a bottom of the via hole is defined by the n + -type cladding layer, and wherein the via hole is located below a region corresponding to the upper central unoxidized opening.
In an embodiment of the vcsel having the single distributed bragg reflector group, the epitaxial structure further includes at least one trench opened upward, wherein the at least one trench penetrates at least the upper current confinement layer, so that the peripheral oxide current confinement region on the upper current confinement layer is exposed by the at least one trench.
In an embodiment, the vcsel with the single distributed bragg reflector group further includes a dielectric isolation layer covering at least a portion of the peripheral oxide current confinement region of the upper current confinement layer exposed in the at least one trench.
In an embodiment, the vertical cavity surface emitting laser with a single distributed bragg reflector group further includes a lower current confinement layer, wherein the lower current confinement layer is formed on the single distributed bragg reflector group, and the active layer is formed on the lower current confinement layer, wherein the lower current confinement layer includes a lower peripheral oxidized current confinement region and a lower central unoxidized opening region, and wherein the lower central unoxidized opening region is located below the upper central unoxidized opening region.
In an embodiment of the present invention, in the vcsel having the single distributed bragg reflector group, a material constituting the lower current confinement layer is aluminum arsenide.
In an embodiment of the vcsel having the single distributed bragg reflector group, the epitaxial structure further includes at least one trench opened upward, wherein the at least one trench penetrates through the lower current confinement layer at least, such that the upper peripheral oxide current confinement region of the upper current confinement layer and the lower peripheral oxide current confinement region of the lower current confinement layer are exposed by the at least one trench.
In an embodiment, the vcsel with the single distributed bragg reflector group further includes a dielectric isolation layer covering at least one of the trenches exposing an upper peripheral oxide current confinement region of the upper current confinement layer and a lower peripheral oxide current confinement region of the lower current confinement layer.
In an embodiment of the above-mentioned vcsel with a single distributed bragg reflector group, the epitaxial structure further includes an upper n-type cladding layer, wherein the upper n-type cladding layer is formed on the lower current confinement layer, and the active layer is formed on the upper n-type cladding layer.
In an embodiment of the invention, in the vcsel with the single distributed bragg reflector set, the epitaxial structure further includes a lower n-type cladding layer, wherein the lower n-type cladding layer is formed on the single distributed bragg reflector set, and the lower current confinement layer is formed on the lower n-type cladding layer.
In an embodiment of the invention, in the vcsel with the single distributed bragg reflector set, the epitaxial structure further includes a lower n-type cladding layer, wherein the lower n-type cladding layer is formed on the single distributed bragg reflector set, and the active layer is formed on the lower n-type cladding layer.
In an embodiment, in the aforementioned vcsel with a single distributed bragg reflector group, the compound semiconductor substrate is made of gaas.
In an embodiment, in the aforementioned vcsel having a single distributed bragg reflector group, the compound semiconductor substrate is formed of n + gaas.
In an embodiment of the present invention, the vcsel having the single distributed bragg reflector group is formed by stacking at least twenty n-type distributed bragg reflectors, wherein each n-type distributed bragg reflector comprises an n-type aluminum arsenide layer and an n-type aluminum gallium arsenide layer, and the n-type aluminum arsenide layer is formed on the n-type aluminum gallium arsenide layer.
In an embodiment of the present invention, in the vcsel having the single distributed bragg reflector group, a material constituting the upper current confinement layer is aluminum arsenide.
In an embodiment of the foregoing vertical cavity surface emitting laser having a single distributed bragg reflector group, a material constituting the p-type contact metal reflective layer is gold.
The invention has the advantages that: the number of layers of the epitaxial structure can be reduced, so that the accumulation of excessive stress is reduced, and the quality of the epitaxy is improved.
For further understanding of the present invention, the following detailed description of the preferred embodiments will be provided in conjunction with the drawings and figures to illustrate the specific components of the present invention and the functions performed thereby.
Drawings
FIG. 1 is a schematic cross-sectional view of an embodiment of a VCSEL with a single distributed Bragg reflector group in accordance with the present invention.
FIG. 2 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 3 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 4 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 5 is a cross-sectional view of an embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 6 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 7 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 8 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 9 is a cross-sectional view of an embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 10 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 11 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 12 is a cross-sectional view of another embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 13 is a cross-sectional view of an embodiment of a VCSEL having a single distributed Bragg reflector group in accordance with the present invention.
FIG. 14 is a specific embodiment of a prior art VCSEL.
Description of reference numerals: a 1 n-type contact metal layer; 2 a compound semiconductor substrate; 20 an upper surface; 21 lower surface; 22 through holes; 220 bottom part; side 221; 3 an epitaxial structure; a 30n + type cladding layer; a 300n + type gallium arsenide sublayer; 301n + type aluminum arsenide sublayer; 31 a single distributed bragg reflector group; 310 n-type distributed bragg reflector; 311 n-type AlGaAs layer; a 312n type aluminum arsenide layer; 32 lower n-type cladding layer; a lower current confinement layer 33; 330 lower peripheral oxidation current confinement region; 331 lower central unoxidized open area; an n-type cladding layer on 34; 35 an active layer; 36 lower p-type cladding layer; 37, a current confining layer; a peripheral oxidation current confinement region on 370; 371; 38 a p-type cladding layer; a 39p + -type cladding layer; a 390p + type aluminum arsenide sublayer; 391p + gallium arsenide sublayer; a 4 p-type contact metal reflective layer; 5 a dielectric isolation layer; 6, a groove; 901p type contact metal layer; 902 p-type compound semiconductor substrate; 903p + type cladding layer; 904 p-type AlGaAs layers; 905 p-type aluminum arsenide layer; 906 p-type distributed bragg reflectors; 907p type distributed Bragg reflector group; 908 p-type cladding layer; 909 an active layer; 910 an n-type cladding layer; a 911 current confinement layer; 912 peripheral oxidation current confinement region; 913 a central unoxidized open area; 914 with an n-type cladding layer; 915n type aluminum arsenide layer; 916 n-type AlGaAs layer; 917n type distributed bragg reflector; 918n + type cladding layer; 919 n-type contact metal layers; 920 a dielectric isolation layer; 921n type distributed bragg reflector group; 922 trench.
Detailed Description
Please refer to fig. 1, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to an embodiment of the present invention. The invention relates to a vertical resonant cavity surface emitting laser with a single distributed Bragg reflector group, which comprises: a compound semiconductor substrate 2, an n-type contact metal layer 1, an epitaxial structure 3, a p-type contact metal reflection layer 4 and a dielectric isolation layer 5. Wherein the compound semiconductor substrate 2 has an upper surface 20 and a lower surface 21. The compound semiconductor substrate 2 is made of gallium arsenide (GaAs). In a preferred embodiment, the compound semiconductor substrate 2 is composed of n + type gallium arsenide. An n-type contact metal layer 1 is formed on the lower surface 21 of the compound semiconductor substrate 2. The epitaxial structure 3 is formed on the upper surface 20 of the compound semiconductor substrate 2. The epitaxial structure 3 includes: a single distributed bragg reflector group 31, an active layer 35 and an upper current confinement layer 37. Wherein a single distributed Bragg reflector group 31 is formed on the upper surface 20 of the compound semiconductor substrate 2; the active layer 35 is formed on the single distributed bragg reflector group 31; an upper current confinement layer 37 is formed over the active layer 35. Wherein the single distributed Bragg reflector group 31 is an n-type distributed Bragg reflector group. A single distributed bragg reflector group 31 is formed by stacking at least twenty n-type distributed bragg reflectors 310. Each n-type distributed Bragg reflector 310 includes an n-type aluminum arsenide layer 312(AlAs) and an n-type aluminum gallium arsenide layer 311(AlGaAs), wherein the n-type aluminum arsenide layer 312 is formed on the n-type aluminum gallium arsenide layer 311. Wherein the material of which the upper current confinement layer 37 is comprised is aluminum arsenide. The epitaxial structure 3 has a trench 6. The trench 6 penetrates at least the upper current confinement layer 37. The upper current confinement layer 37 may be exposed by means of the trenches 6 prior to forming the dielectric isolation layer 5. The upper current confinement layer 37 is exposed by the trench 6 and is in contact with oxygen to be oxidized to form an upper peripheral oxidized current confinement region 370; and an upper central unoxidized opening 371 is the unoxidized area of the upper current confinement layer 37. In some preferred embodiments, the diameter of the upper central unoxidized open area 371 is greater than or equal to 10 μm and less than or equal to 20 μm. The dielectric isolation layer 5 is formed at least on the inner surface of the trench 6, and the dielectric isolation layer 5 at least covers the exposed upper peripheral oxidation current confinement region 370 of the upper current confinement layer 37, so that the upper peripheral oxidation current confinement region 370 of the upper current confinement layer 37 is not oxidized any more. Since the current is not easily passed through the oxidized upper peripheral oxidized current confinement region 370, the current can be concentrated to pass through the upper central unoxidized opening region 371. The material constituting the dielectric isolation layer 5 may be silicon nitride (SiN), silicon oxide (SiO2), silicon oxynitride, or a mixture thereof. Wherein the compound semiconductor substrate 2 has a through-hole 22. The through hole 22 penetrates the compound semiconductor substrate 2. The through-hole 22 opens downward. A bottom 220 of the via 22 is defined by a single distributed bragg reflector group 31. One side 221 of the through-hole 22 is defined by the compound semiconductor substrate 2. The via hole 22 is located below the corresponding upper central unoxidized opening region 371. Wherein the p-type contact metal reflection layer 4 is formed on the epitaxial structure 3 and contacts with the epitaxial structure 3. In this embodiment, the p-type contact metal reflective layer 4 is formed on the current confinement layer 37 on the epitaxial structure 3 and contacts the current confinement layer 37 on the epitaxial structure 3. The p-type contact metal reflective layer 4 of the present invention is made of gold. Since the present invention does not have the p-type distributed bragg reflector group in the prior art, the number of layers of the epitaxial structure can be greatly reduced, so that the gold of the p-type contact metal reflection layer 4 can be formed on the epitaxial structure with good epitaxial quality. Therefore, the p-type contact metal reflection layer 4 has a reflectivity greater than or equal to 95%. Therefore, the p-type contact metal reflective layer 4 of the present invention can replace the p-type distributed bragg reflector group in the prior art, and has the function of contact metal at the same time. Therefore, a VCSEL with a single distributed Bragg reflector group of the present invention has an n-type reflective structure and a p-type reflective structure below and above the active layer 35, respectively, wherein the n-type reflective structure is the single distributed Bragg reflector group 31; and the p-type reflective structure is a p-type contact metal reflective layer 4. The light emitting direction of a VCSEL having a single distributed Bragg reflector group of the present invention is downward (indicated by an arrow in FIG. 1). In some embodiments, the through-hole 22 may be further designed to couple with an optical fiber (not shown).
Please refer to fig. 2, which is a schematic cross-sectional view of another embodiment of a vcsel with a single distributed bragg reflector group according to the present invention. The main structure of the embodiment shown in fig. 2 is substantially the same as that of the embodiment shown in fig. 1, however, the epitaxial structure 3 further includes a p + -type cladding layer 39 and an n + -type cladding layer 30. Wherein a p + -type cladding layer 39 is formed over the upper current confinement layer 37; the p-type contact metal reflective layer 4 is formed on the p + -type cladding layer 39. Wherein the trench 6 of the epitaxial structure 3 penetrates at least the p + -type cladding layer 39 and the upper current confinement layer 37 such that the upper current confinement layer 37 is oxidized to form an upper peripheral oxidation current confinement region 370 by exposing an oxygen contact through the trench 6 before forming the dielectric isolation layer 5. In some embodiments, the p + cap layer 39 includes a p + aluminum arsenide sublayer 390 and a p + gallium arsenide sublayer 391(GaAs), the p + aluminum arsenide sublayer 390 is formed on the upper current confinement layer 37, the p + gallium arsenide sublayer 391 is formed on the p + aluminum arsenide sublayer 390, and the p-contact metal reflective layer 4 is formed on the p + gallium arsenide sublayer 391. Wherein an n + -type cladding layer 30 is formed on the upper surface 20 of the compound semiconductor substrate 2; a single distributed Bragg reflector group 31 formed on the n + -type cladding layer 30; wherein the bottom 220 of the via 22 is defined by the n + -type cladding layer 30. In some embodiments, the n + type cladding layer 30 includes an n + type aluminum arsenide sublayer 301 and an n + type gallium arsenide sublayer 300, wherein the n + type gallium arsenide sublayer 300 is formed on the upper surface 20 of the compound semiconductor substrate 2, the n + type aluminum arsenide sublayer 301 is formed on the n + type gallium arsenide sublayer 300, and the single distributed bragg reflector group 31 is formed on the n + type aluminum arsenide sublayer 301; wherein the bottom 220 of the via 22 is defined by the n + gaas sublayer 300 of the n + capping layer 30.
Please refer to fig. 3, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 3 is substantially the same as that of the embodiment shown in fig. 2, however, the epitaxial structure 3 further includes a lower p-type cladding layer 36. Wherein a lower p-type cladding layer 36 is formed on the active layer 35, and an upper current confinement layer 37 is formed on the lower p-type cladding layer 36.
Please refer to fig. 4, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 4 is substantially the same as that of the embodiment shown in fig. 2, however, the epitaxial structure 3 further includes an upper p-type cladding layer 38. Wherein an upper p-type cladding layer 38 is formed on the upper current confining layer 37, and a p + -type cladding layer 39 is formed on the upper p-type cladding layer 38. Wherein the trench 6 of the epitaxial structure 3 at least penetrates the p + -type cladding layer 39, the upper p-type cladding layer 38 and the upper current confinement layer 37, such that the upper current confinement layer 37 is oxidized to form an upper peripheral oxidation current confinement region 370 by exposing an oxygen contact through the trench 6 before forming the dielectric isolation layer 5.
Please refer to fig. 5, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to an embodiment of the present invention. The main structure of the embodiment shown in fig. 5 is substantially the same as that of the embodiment shown in fig. 4, however, the epitaxial structure 3 further includes a lower p-type cladding layer 36. Wherein a lower p-type cladding layer 36 is formed on the active layer 35, and an upper current confinement layer 37 is formed on the lower p-type cladding layer 36.
Please refer to fig. 6, which is a schematic cross-sectional view of another embodiment of a vcsel with a single distributed bragg reflector group according to the present invention. The main structure of the embodiment shown in fig. 6 is substantially the same as that of the embodiment shown in fig. 3, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and an active layer 35 is formed on the lower n-type cladding layer 32.
Please refer to fig. 7, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 7 is substantially the same as that of the embodiment shown in fig. 4, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and an active layer 35 is formed on the lower n-type cladding layer 32.
Please refer to fig. 8, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 8 is substantially the same as that of the embodiment shown in fig. 5, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and an active layer 35 is formed on the lower n-type cladding layer 32.
Please refer to fig. 9, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to an embodiment of the present invention. The main structure of the embodiment shown in fig. 9 is substantially the same as that of the embodiment shown in fig. 1, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32, a lower p-type cladding layer 36 and an upper p-type cladding layer 38. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and an active layer 35 is formed on the lower n-type cladding layer 32. A lower p-type cladding layer 36 is formed on the active layer 35, and an upper current confinement layer 37 is formed on the lower p-type cladding layer 36. An upper p-type cladding layer 38 is formed on the upper current confinement layer 37, and a p-type contact metal reflection layer 4 is formed on the upper p-type cladding layer 38 on the epitaxial structure 3. Wherein the trench 6 of the epitaxial structure 3 penetrates at least the upper p-type cladding layer 38 and the upper current confinement layer 37, such that the upper current confinement layer 37 is oxidized to form an upper peripheral oxidation current confinement region 370 by exposing an oxygen contact to the trench 6 before forming the dielectric isolation layer 5.
Please refer to fig. 10, which is a schematic cross-sectional view of another embodiment of a vcsel with a single distributed bragg reflector group according to the present invention. The main structure of the embodiment shown in fig. 10 is substantially the same as that of the embodiment shown in fig. 5, however, the epitaxial structure 3 further includes a lower current confinement layer 33, wherein the lower current confinement layer 33 is formed on the single distributed bragg reflector group 31, the active layer 35 is formed on the lower current confinement layer 33, wherein the lower current confinement layer 33 includes a lower peripheral oxidized current confinement region 330 and a lower central unoxidized opening region 331, wherein the lower central unoxidized opening region 331 is located below the corresponding upper central unoxidized opening region 371. Wherein the trench 6 of the epitaxial structure 3 at least penetrates the p + type cladding layer 39, the upper p-type cladding layer 38, the upper current confinement layer 37, the lower p-type cladding layer 36, the active layer 35 and the lower current confinement layer 33, such that the upper current confinement layer 37 and the lower current confinement layer 33 are oxidized to form an upper peripheral oxidation current confinement region 370 and a lower peripheral oxidation current confinement region 330, respectively, by exposing oxygen contact to the trench 6 before forming the dielectric isolation layer 5. Wherein the dielectric isolation layer 5 is formed at least on the inner surface of the trench 6, and the dielectric isolation layer 5 at least covers the upper peripheral oxidation current confinement region 370 of the upper current confinement layer 37 and the lower peripheral oxidation current confinement region 330 of the lower current confinement layer 33, so that the upper peripheral oxidation current confinement region 370 of the upper current confinement layer 37 and the lower peripheral oxidation current confinement region 330 of the lower current confinement layer 33 are not oxidized any more.
Please refer to fig. 11, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 11 is substantially the same as that of the embodiment shown in fig. 10, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and a lower current confinement layer 33 is formed on the lower n-type cladding layer 32.
Please refer to fig. 12, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to another embodiment of the present invention. The main structure of the embodiment shown in fig. 12 is substantially the same as that of the embodiment shown in fig. 10, however, the epitaxial structure 3 further includes an upper n-type cladding layer 34, wherein the upper n-type cladding layer 34 is formed on the lower current confinement layer 33, and the active layer 35 is formed on the upper n-type cladding layer 34. Wherein the trench 6 of the epitaxial structure 3 at least penetrates the p + type cladding layer 39, the upper p-type cladding layer 38, the upper current confinement layer 37, the lower p-type cladding layer 36, the active layer 35, the upper n-type cladding layer 34 and the lower current confinement layer 33, such that the upper current confinement layer 37 and the lower current confinement layer 33 are oxidized to form the upper peripheral oxidation current confinement region 370 and the lower peripheral oxidation current confinement region 330, respectively, by exposing oxygen contact through the trench 6 before forming the dielectric isolation layer 5.
Please refer to fig. 13, which is a schematic cross-sectional view of a vcsel with a single distributed bragg reflector group according to an embodiment of the present invention. The main structure of the embodiment shown in fig. 13 is substantially the same as that of the embodiment shown in fig. 12, however, the epitaxial structure 3 further includes a lower n-type cladding layer 32. Wherein a lower n-type cladding layer 32 is formed on the single distributed Bragg reflector group 31, and a lower current confinement layer 33 is formed on the lower n-type cladding layer 32.
The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (26)
1. A vcsel having a single distributed bragg reflector group, comprising:
a compound semiconductor substrate, wherein the compound semiconductor substrate has an upper surface and a lower surface;
an n-type contact metal layer formed on the lower surface of the compound semiconductor substrate;
an epitaxial structure formed on the upper surface of the compound semiconductor substrate, wherein the epitaxial structure comprises a single distributed Bragg reflector group, an active layer and an upper current confinement layer, wherein: the single distributed Bragg reflector group is formed on the upper surface of the compound semiconductor substrate, wherein the single distributed Bragg reflector group is an n-type distributed Bragg reflector group; the active layer is formed on the single distributed Bragg reflector group; the upper current confinement layer is formed on the active layer, wherein the upper current confinement layer comprises an upper peripheral oxidation current confinement region and an upper central unoxidized opening region; and
a p-type contact metal reflection layer formed on the upper current confinement layer of the epitaxial structure and contacting with the epitaxial structure, wherein the single distributed Bragg reflector group is an n-type reflection structure of the VCSEL under the active layer, and the p-type contact metal reflection layer is a p-type reflection structure of the VCSEL over the active layer.
2. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the p-type contact metal reflecting layer has a reflectivity, wherein the reflectivity is greater than or equal to 95%.
3. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the compound semiconductor substrate has a through hole, wherein the through hole penetrates through the compound semiconductor substrate, wherein the through hole is opened downwards, wherein a bottom of the through hole is defined by the single distributed Bragg reflector group, and wherein the through hole is positioned below the upper central unoxidized opening area.
4. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the epitaxial structure further includes a lower p-type cladding layer formed on the active layer, and the upper current confinement layer is formed on the lower p-type cladding layer.
5. The VCSEL with the single distributed Bragg reflector group as claimed in claim 1 or 4, wherein: the epitaxial structure further includes a p + type cap layer, wherein the p + type cap layer is formed over the upper current confinement layer and the p-type contact metal reflector layer is formed over the p + type cap layer of the epitaxial structure.
6. The VCSEL of claim 5, wherein: the p + type cladding layer comprises a p + type aluminum arsenide sublayer and a p + type gallium arsenide sublayer, wherein the p + type aluminum arsenide sublayer is formed on the upper current confinement layer, the p + type gallium arsenide sublayer is formed on the p + type aluminum arsenide sublayer, and the p type contact metal reflecting layer is formed on the p + type gallium arsenide sublayer.
7. The VCSEL with the single distributed Bragg reflector group as claimed in claim 1 or 4, wherein: the epitaxial structure further includes an upper p-type cladding layer formed on the upper current confinement layer, and the p-type contact metal reflective layer is formed on the upper p-type cladding layer of the epitaxial structure.
8. The VCSEL of claim 7, wherein: the epitaxial structure further includes a p + type cap layer, wherein the p + type cap layer is formed on the upper p type cladding layer, and the p type contact metal reflective layer is formed on the p + type cap layer of the epitaxial structure.
9. The VCSEL of claim 8, wherein: the p + type covering layer comprises a p + type aluminum arsenide sublayer and a p + type gallium arsenide sublayer, wherein the p + type aluminum arsenide sublayer is formed on the upper p type covering layer, the p + type gallium arsenide sublayer is formed on the p + type aluminum arsenide sublayer, and the p type contact metal reflecting layer is formed on the p + type gallium arsenide sublayer.
10. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the epitaxial structure further includes an n + type cladding layer formed on the upper surface of the compound semiconductor substrate, the single distributed Bragg reflector group being formed on the n + type cladding layer.
11. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 10, wherein: the n + type cladding layer includes an n + type aluminum arsenide sublayer and an n + type gallium arsenide sublayer, wherein the n + type gallium arsenide sublayer is formed on the upper surface of the compound semiconductor substrate, the n + type aluminum arsenide sublayer is formed on the n + type gallium arsenide sublayer, and the single distributed Bragg reflector group is formed on the n + type aluminum arsenide sublayer.
12. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 10, wherein: the compound semiconductor substrate has a via hole, wherein the via hole penetrates through the compound semiconductor substrate, wherein the via hole is open downward, wherein a bottom of the via hole is defined by the n + -type cladding layer, wherein the via hole is located below a region corresponding to the upper central unoxidized opening.
13. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the epitaxial structure further includes at least one trench having an upward opening, wherein the at least one trench penetrates at least the upper current confinement layer such that the upper peripheral oxide current confinement region of the upper current confinement layer is exposed by the at least one trench.
14. The VCSEL of claim 13, further comprising a dielectric isolation layer covering at least the upper peripheral oxide current confinement region of the upper current confinement layer exposed within the at least one trench.
15. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the epitaxial structure further includes a lower current confinement layer, wherein the lower current confinement layer is formed on the single distributed Bragg reflector group, and the active layer is formed on the lower current confinement layer, wherein the lower current confinement layer includes a lower peripheral oxidized current confinement region and a lower central unoxidized opening region, wherein the lower central unoxidized opening region is located below the upper central unoxidized opening region.
16. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 15, wherein: the material constituting the lower current confinement layer is aluminum arsenide.
17. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 15, wherein: the epitaxial structure further includes at least one trench having an upward opening, wherein the at least one trench penetrates at least the lower current confinement layer such that the upper peripheral oxide current confinement region of the upper current confinement layer and the lower peripheral oxide current confinement region of the lower current confinement layer are exposed by the at least one trench.
18. The VCSEL of claim 17, further comprising a dielectric isolation layer covering at least the upper peripheral oxide current confinement region of the upper current confinement layer and the lower peripheral oxide current confinement region of the lower current confinement layer exposed within the at least one trench.
19. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 15, wherein: the epitaxial structure further includes an upper n-type cladding layer formed on the lower current confinement layer, and the active layer is formed on the upper n-type cladding layer.
20. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 15 or 19, wherein: the epitaxial structure further includes a lower n-type cladding layer formed on the single distributed Bragg reflector group, and the lower current confinement layer is formed on the lower n-type cladding layer.
21. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the epitaxial structure further includes a lower n-type cladding layer formed on the single distributed Bragg reflector group, and the active layer is formed on the lower n-type cladding layer.
22. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the compound semiconductor substrate is composed of gallium arsenide.
23. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 22, wherein: the compound semiconductor substrate is composed of n + -type gallium arsenide.
24. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the single distributed Bragg reflector group is formed by stacking at least twenty n-type distributed Bragg reflectors, wherein each n-type distributed Bragg reflector comprises an n-type aluminum arsenide layer and an n-type aluminum gallium arsenide layer, and the n-type aluminum arsenide layer is formed on the n-type aluminum gallium arsenide layer.
25. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the material of which the upper current confinement layer is comprised is aluminum arsenide.
26. A vertical cavity surface emitting laser having a single set of distributed bragg reflectors according to claim 1, wherein: the material constituting the p-type contact metal reflective layer is gold.
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