CN209266844U - Vertical cavity surface emitting laser device with single distributing Bragg reflector group - Google Patents
Vertical cavity surface emitting laser device with single distributing Bragg reflector group Download PDFInfo
- Publication number
- CN209266844U CN209266844U CN201920029510.XU CN201920029510U CN209266844U CN 209266844 U CN209266844 U CN 209266844U CN 201920029510 U CN201920029510 U CN 201920029510U CN 209266844 U CN209266844 U CN 209266844U
- Authority
- CN
- China
- Prior art keywords
- bragg reflector
- type
- layer
- reflector group
- vertical cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model provides a kind of vertical cavity surface emitting laser device with single distributing Bragg reflector group, is a lower surface and the upper surface that N-shaped contact metal layer and epitaxial structure are respectively formed in compound semiconductor substrate.Epitaxial structure limits to layer including electric current in a single distributing Bragg reflector group, an active layers and one.Single distributing Bragg reflector group is a N-shaped distributing Bragg reflector group.Active layers are formed on single distributing Bragg reflector group.Electric current limitation layer is formed on active layers.Electric current limitation floor includes that a peripheral oxidation current limitation area and a center do not aoxidize open region.P-type contact metallic reflector is formed on epitaxial structure and is in contact with epitaxial structure.Wherein single distributing Bragg reflector group and p-type contact metallic reflector be respectively vertical cavity surface emitting laser device under active layers and on a N-shaped catoptric arrangement and a p-type catoptric arrangement.
Description
Technical field
The utility model relates to a kind of vertical cavity surface emitting laser devices, espespecially have single distributing Bragg reflection
The vertical cavity surface emitting laser device of device group.
Background technique
Figure 14 is please referred to, is a specific embodiment of the vertical cavity surface emitting laser device of the prior art.Existing skill
The vertical cavity surface emitting laser device of art includes: a p-type compound semiconductor substrate 902, a p-type contact metal layer 901, one
P+ type coating 903, a p-type distributing Bragg reflector group 907, a p-type coating layer 908, an active layers 909, once N-shaped
N-shaped coating layer 914, a N-shaped distributing Bragg reflector group 921, a n+ on coating layer 910, electric current limitation layer 911, one
Type coating 918, a N-shaped contact metal layer 919, a dielectric barrier layer 920 and a groove 922.Wherein p-type contact metal layer
901 are formed on a lower surface of p-type compound semiconductor substrate 902.P+ type coating 903 is formed in p-type compound half
On one upper surface of conductor substrate 902.P-type distributing Bragg reflector group 907 is formed on p+ type coating 903.p
Type coating layer 908 is formed on p-type distributing Bragg reflector group 907.Active layers 909 be formed in p-type coating layer 908 it
On.Lower N-shaped coating layer 910 is formed on active layers 909.Electric current limitation layer 911 is formed on lower N-shaped coating layer 910.On
N-shaped coating layer 914 is formed on electric current limitation layer 911.N-shaped distributing Bragg reflector group 921 is formed in N-shaped coating
On layer 914.N+ type coating 918 is formed on N-shaped distributing Bragg reflector group 921.Wherein p-type distributing Bradley
Lattice reflector group 907 is stacked by about 30 p-type distributing Bragg reflectors 906.Wherein each p-type distributing cloth
Bragg reflector 906 includes a p-type aluminium arsenide layer 905 and a p-type aluminum gallium arsenide layer 904, wherein 905 shape of p-type aluminium arsenide layer
At on p-type aluminum gallium arsenide layer 904.Wherein N-shaped distributing Bragg reflector group 921 is by about 30 N-shaped distributing cloth
Bragg reflector 917 stacks.Wherein each N-shaped distributing Bragg reflector 917 includes a N-shaped aluminium arsenide layer 915
And a N-shaped aluminum gallium arsenide layer 916, wherein N-shaped aluminum gallium arsenide layer 916 is formed on N-shaped aluminium arsenide layer 915.Slot 922 is at least
N+ type coating 918, N-shaped distributing Bragg reflector group 921, upper N-shaped coating layer 914 and electric current limitation layer 911 are penetrated,
So that electric current limits to layer 911 and can expose by groove 922 before forming dielectric barrier layer 920.Electric current limitation layer 911 relies on
The part that groove 922 exposes can be contacted with oxygen, and aoxidized and formed a peripheral oxidation current limitation area 912；And the non-oxygen in center
It melts mouth region 913 and then limits to the inoxidized region of layer 911 for electric current.Dielectric barrier layer 920 is at least formed in groove 922
On surface, and dielectric barrier layer 920 at least covers the peripheral oxidation current limitation area 912 of the electric current limitation floor 911 of exposing, makes
The peripheral oxidation current limitation area 912 for obtaining electric current limitation floor 911 does not continue to aoxidize.N-shaped contact metal layer 919 is formed in n+ type
On coating 918.The light direction of the vertical cavity surface emitting laser device of the prior art is upward (the arrow institute in Figure 14
Show).Vertical cavity surface emitting laser device due to the prior art is being respectively provided with a N-shaped catoptric arrangement (N-shaped distributing up and down
Bragg reflector group 921) and a p-type catoptric arrangement (p-type distributing Bragg reflector group 907), light is N-shaped distributing
Just about 120 layers of the epitaxial structure of Bragg reflector group 921 and p-type distributing Bragg reflector group 907.
And the epitaxial structure of so multilayer can accumulate excessive stress, the stress of accumulation will cause p-type compound semiconductor substrate 902
Warpage.Especially when substrate size is bigger, the phenomenon that substrate warp, is more obvious, is the difficulty for being badly in need of overcoming.And stress also can
Influence the characteristic of vertical cavity surface emitting laser device.In addition, the epitaxial structure number of plies is more, then more the epitaxy quality on upper layer more
It is hard to keep good, this also influences whether the characteristic of vertical cavity surface emitting laser device.
Utility model content
In view of this, inventor develops the design of easy assembled, above-mentioned disadvantage can be avoided, it is easy for installation, and have
Have the advantages that low in cost, is considered with taking into account using elasticity and economy etc., therefore have the generation of the utility model then.
To solve foregoing problems, to reach desired effect, the utility model provides a kind of with single distributing cloth
The vertical cavity surface emitting laser device of bragg reflector group, comprising: a compound semiconductor substrate, a N-shaped contact metal layer,
One epitaxial structure and a p-type contact metallic reflector.Wherein compound semiconductor substrate has a upper surface and a following table
Face.N-shaped contact metal layer is formed on the lower surface of compound semiconductor substrate.Epitaxial structure is formed in compound semiconductor
On the upper surface of substrate.Wherein epitaxial structure includes: a single distributing Bragg reflector group, in an active layers and one
Electric current limits to layer.Single distributing Bragg reflector group is formed on the upper surface of compound semiconductor substrate, and single point
Dissipating formula Bragg reflector group is a N-shaped distributing Bragg reflector group.It is anti-that active layers are formed in single distributing Prague
On emitter group.Upper electric current limitation layer is formed on active layers.Upper electric current limitation layer includes peripheral oxidation current limitation on one
Center does not aoxidize open region in area and one.P-type contact metallic reflector is formed on epitaxial structure on electric current limitation layer,
And p-type contact metallic reflector is in contact with epitaxial structure, wherein single distributing Bragg reflector group is vertical cavity
A N-shaped catoptric arrangement of the surface emitting laser device under active layers, wherein p-type contact metallic reflector is vertical cavity surface emitting
A p-type catoptric arrangement of the type laser on active layers.The utility model has single distributing Bragg reflector group
Vertical cavity surface emitting laser device, only have single distributing Bragg reflector group (N-shaped), and utilize p-type contact gold
Belong to high reflectance possessed by reflecting layer to replace the p-type distributing Bragg reflector group of the prior art, is built to reach to reduce
The number of plies of crystal structure to reduce the accumulation of excessive stress, and promotes the purpose of the quality of epitaxy simultaneously.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein p-type contact metallic reflector has a reflectivity, and wherein reflectivity is greater than or equal to 95%.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein compound semiconductor substrate have a through-hole, wherein through-hole run through compound semiconductor substrate, wherein via openings to
Under, wherein a bottom of through-hole is defined by single distributing Bragg reflector group, and wherein through-hole is in corresponding to
Centre does not aoxidize the lower section of open region.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes a lower p-type coating layer, and wherein lower p-type coating layer is formed on active layers, upper electric current limitation
Layer is formed on lower p-type coating layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes a p+ type coating, and wherein p+ type coating is formed on electric current limitation layer, and p-type connects
Touching metallic reflector is formed on the p+ type coating of epitaxial structure.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein p+ type coating includes a p+ type aluminium arsenide sublevel and a p+ p type gallium arensidep sublevel, wherein p+ type aluminium arsenide sublevel
It is formed on electric current limitation layer, p+ p type gallium arensidep sublevel is formed on p+ type aluminium arsenide sublevel, p-type contact metallic reflection
Layer is formed on p+ p type gallium arensidep sublevel.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes p-type coating layer on one, wherein upper p-type coating layer is formed on electric current limitation layer, p-type
Contact metallic reflector is formed on epitaxial structure on p-type coating layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes a p+ type coating, and wherein p+ type coating is formed on p-type coating layer, p-type contact
Metallic reflector is formed on the p+ type coating of epitaxial structure.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein p+ type coating includes a p+ type aluminium arsenide sublevel and a p+ p type gallium arensidep sublevel, wherein p+ type aluminium arsenide sublevel
It is formed on p-type coating layer, p+ p type gallium arensidep sublevel is formed on p+ type aluminium arsenide sublevel, p-type contact metallic reflection
Layer is formed on p+ p type gallium arensidep sublevel.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes a n+ type coating, and wherein n+ type coating is formed in table on compound semiconductor substrate
On face, single distributing Bragg reflector group is formed on n+ type coating.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein n+ type coating includes a n+ type aluminium arsenide sublevel and a n+ p type gallium arensidep sublevel, wherein n+ p type gallium arensidep sublevel
It is formed on the upper surface of compound semiconductor substrate, n+ type aluminium arsenide sublevel is formed on n+ p type gallium arensidep sublevel, single
One distributing Bragg reflector group is formed on n+ type aluminium arsenide sublevel.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein compound semiconductor substrate have a through-hole, wherein through-hole run through compound semiconductor substrate, wherein via openings to
Under, wherein a bottom of through-hole is defined by n+ type coating, and wherein through-hole does not aoxidize open region positioned at center is corresponded to
Lower section.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes an at least groove for opening upwards, and a wherein at least groove at least penetrates electric current limitation layer,
So that peripheral oxidation current limitation area exposes by an at least groove on upper electric current limitation floor.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device further includes a dielectric barrier layer, and wherein dielectric barrier layer at least covers electric current limitation on the interior exposing of an at least groove
Peripheral oxidation current limits to area on floor.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes electric current limitation layer, wherein to be formed in single distributing Prague anti-for lower electric current limitation layer
On emitter group, active layers are formed on lower electric current limitation layer, wherein lower electric current limitation layer includes peripheral oxidation current
Limitation area and once center does not aoxidize open region is located at wherein lower center does not aoxidize open region and corresponds to center and do not aoxidize
The lower section of open region.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein the material for constituting lower electric current limitation layer is aluminium arsenide.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes an at least groove for opening upwards, and a wherein at least groove at least penetrates lower electric current limitation layer,
So that peripheral oxidation current limits to area on upper electric current limitation floor and lower electric current limits to peripheral oxidation current under floor and limits to area
Expose by an at least groove.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device further includes a dielectric barrier layer, and wherein dielectric barrier layer at least covers electric current limitation on the interior exposing of an at least groove
Peripheral oxidation current limitation area and lower electric current limit to peripheral oxidation current under floor and limit to area on floor.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes N-shaped coating layer on one, wherein upper N-shaped coating layer is formed on lower electric current limitation layer, actively
Layer is formed on N-shaped coating layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes N-shaped coating layer, wherein lower N-shaped coating layer is formed in single distributing Bragg reflection
On device group, lower electric current limitation layer is formed on lower N-shaped coating layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein epitaxial structure further includes N-shaped coating layer, wherein lower N-shaped coating layer is formed in single distributing Bragg reflection
On device group, active layers are formed on lower N-shaped coating layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein compound semiconductor substrate is made of GaAs.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein compound semiconductor substrate is made of n+ p type gallium arensidep.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein single distributing Bragg reflector group is stacked by least 20 N-shaped distributing Bragg reflectors, wherein
Each N-shaped distributing Bragg reflector includes a N-shaped aluminium arsenide layer and a N-shaped aluminum gallium arsenide layer, wherein N-shaped aluminium arsenide layer
It is formed on N-shaped aluminum gallium arsenide layer.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein the material for constituting upper electric current limitation layer is aluminium arsenide.
In an embodiment, the vertical cavity surface emitting laser (VCSEL) above-mentioned with single distributing Bragg reflector group
Device, wherein the material for constituting p-type contact metallic reflector is gold.
Utility model has the advantages that the number of plies of epitaxial structure can be reduced, to reduce the accumulation of excessive stress, and it is same
The quality of Shi Tisheng epitaxy.
To further appreciate that the utility model, preferred embodiment is lifted below, cooperates schema, figure number, by the utility model
Specific composition content and its it is reached the effect of detailed description are as follows.
Detailed description of the invention
Fig. 1 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of device.
Fig. 2 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the another specific embodiment of device.
Fig. 3 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of device.
Fig. 4 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of device.
Fig. 5 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of device.
Fig. 6 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the another specific embodiment of device.
Fig. 7 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of device.
Fig. 8 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of device.
Fig. 9 is a kind of vertical cavity surface emitting laser (VCSEL) with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of device.
Figure 10 is that a kind of vertical cavity surface emitting type with single distributing Bragg reflector group of the utility model swashs
The diagrammatic cross-section of the another specific embodiment of light device.
Figure 11 is that a kind of vertical cavity surface emitting type with single distributing Bragg reflector group of the utility model swashs
The diagrammatic cross-section of the still another embodiment of light device.
Figure 12 is that a kind of vertical cavity surface emitting type with single distributing Bragg reflector group of the utility model swashs
The diagrammatic cross-section of the still another embodiment of light device.
Figure 13 is that a kind of vertical cavity surface emitting type with single distributing Bragg reflector group of the utility model swashs
The diagrammatic cross-section of one specific embodiment of light device.
Figure 14 is a specific embodiment of the vertical cavity surface emitting laser device of the prior art.
Description of symbols: 1n type contact metal layer；2 compound semiconductor substrates；20 upper surfaces；21 lower surfaces；22 is logical
Hole；220 bottoms；221 sides；3 epitaxial structures；30n+ type coating；300n+ p type gallium arensidep sublevel；301n+ type aluminium arsenide
Layer；31 single distributing Bragg reflector groups；310n type distributing Bragg reflector；311n type aluminum gallium arsenide layer；312n
Type aluminium arsenide layer；32 lower N-shaped coating layers；33 lower electric currents limit to layer；330 lower peripheral oxidation currents limit to area；The 331 lower non-oxygen in center
Melt mouth region；N-shaped coating layer on 34；35 active layers；36 lower p-type coating layers；Electric current limits to layer on 37；Oxidation electricity in periphery on 370
Stream limitation area；Center does not aoxidize open region on 371；P-type coating layer on 38；39p+ type coating；390p+ type aluminium arsenide sublevel；
391p+ p type gallium arensidep sublevel；4p type contacts metallic reflector；5 dielectric barrier layers；6 grooves；901p type contact metal layer；902p
Type compound semiconductor substrate；903p+ type coating；904p type aluminum gallium arsenide layer；905p type aluminium arsenide layer；906p type distributing
Bragg reflector；907p type distributing Bragg reflector group；908p type coating layer；909 active layers；910 lower N-shaped coatings
Layer；911 electric currents limit to layer；912 peripheral oxidation currents limit to area；913 centers do not aoxidize open region；N-shaped coating layer on 914；
915n type aluminium arsenide layer；916n type aluminum gallium arsenide layer；917n type distributing Bragg reflector；918n+ type coating；919n type
Contact metal layer；920 dielectric barrier layers；921n type distributing Bragg reflector group；922 grooves.
Specific embodiment
Referring to Fig. 1, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of surface emitting laser device.One kind of the utility model has single distributing Prague anti-
The vertical cavity surface emitting laser device of emitter group includes: that a compound semiconductor substrate 2, a N-shaped contact metal layer 1, one are of heap of stone
Crystal structure 3, a p-type contact metallic reflector 4 and a dielectric barrier layer 5.Wherein compound semiconductor substrate 2 has table on one
Face 20 and a lower surface 21.Compound semiconductor substrate 2 is made of GaAs (GaAs).In a preferred embodiment,
Compound semiconductor substrate 2 is made of n+ p type gallium arensidep.N-shaped contact metal layer 1 is formed under compound semiconductor substrate 2
On surface 21.Epitaxial structure 3 is formed on the upper surface 20 of compound semiconductor substrate 2.Epitaxial structure 3 includes: one single
Electric current limits to layer 37 in one distributing Bragg reflector group 31, an active layers 35 and one.Wherein single distributing Prague
Reflector group 31 is formed on the upper surface 20 of compound semiconductor substrate 2；Active layers 35 are formed in single distributing Bradley
On lattice reflector group 31；Upper electric current limitation layer 37 is formed on active layers 35.Wherein single distributing Bragg reflector
Group 31 is a N-shaped distributing Bragg reflector group.Single distributing Bragg reflector group 31 is by least 20 N-shaped dispersions
Formula Bragg reflector 310 stacks.Wherein each N-shaped distributing Bragg reflector 310 includes a N-shaped aluminium arsenide layer
312 (AlAs) and a N-shaped aluminum gallium arsenide layer 311 (AlGaAs), wherein N-shaped aluminium arsenide layer 312 is formed in N-shaped aluminum gallium arsenide layer
On 311.The material for wherein constituting upper electric current limitation layer 37 is aluminium arsenide.Epitaxial structure 3 has a groove 6.Groove 6 is at least worn
Upper electric current limits to layer 37 thoroughly.Before forming dielectric barrier layer 5, upper electric current limitation layer 37 can expose by groove 6.Upper electric current office
The part that limit layer 37 exposes by groove 6 can be contacted with oxygen, and aoxidized peripheral oxidation current in formation one and limited to area 370；And
It is the upper electric current limitation inoxidized region of layer 37 that center, which does not aoxidize open region 371 then, on one.In some preferred embodiments,
The diameter that upper center does not aoxidize open region 371 is greater than or equal to 10 μm, and is less than or equal to 20 μm.Dielectric barrier layer 5 is at least
It is formed on the inner surface of groove 6, and dielectric barrier layer 5 at least covers periphery oxidation on electric current limitation layer 37 on exposing
Electric current limits to area 370, so that peripheral oxidation current limitation area 370 does not continue to aoxidize on upper electric current limitation floor 37.Due to electricity
Stream is not easy to be passed through by oxidation current limitation area 370 peripheral on oxidation, therefore electric current can be concentrated and not aoxidized out from upper center
Mouth region 371 passes through.The material for constituting dielectric barrier layer 5 can be silicon nitride (SiN), silica (SiO2), silicon oxynitride or above-mentioned
The mixture of material.Wherein compound semiconductor substrate 2 has a through-hole 22.Through-hole 22 runs through compound semiconductor substrate 2.It is logical
Open Side Down in hole 22.One bottom 220 of through-hole 22 is defined by single distributing Bragg reflector group 31.The side of through-hole 22
Side 221 is defined by compound semiconductor substrate 2.Through-hole 22, which is located at, corresponds to the lower section that center does not aoxidize open region 371.
Wherein p-type contact metallic reflector 4 is formed on epitaxial structure 3, and is in contact with epitaxial structure 3.In this embodiment, p
Type contact metallic reflector 4 is formed on epitaxial structure 3 on electric current limitation layer 37, and with electric current office on epitaxial structure 3
Limit layer 37 is in contact.The p-type contact metallic reflector 4 of the utility model is made of gold.Since there is no existing for the utility model
There is the p-type distributing Bragg reflector group of technology, therefore the number of plies of epitaxial structure can be greatly decreased, so that p-type connects
The gold of touching metallic reflector 4 can be formed on the epitaxial structure with good epitaxy quality.Therefore p-type contact metallic reflector
4 there is a reflectivity can be greater than or equal to 95%.Thus the p-type contact metallic reflector 4 of the utility model may replace existing
There is the p-type distributing Bragg reflector group of technology, and has the function of contacting metal simultaneously.Therefore, the one of the utility model
Kind have single distributing Bragg reflector group vertical cavity surface emitting laser device under active layers 35 and on
It is respectively provided with a N-shaped catoptric arrangement and a p-type catoptric arrangement, wherein N-shaped catoptric arrangement is single distributing Bragg reflection
Device group 31；And p-type catoptric arrangement is p-type contact metallic reflector 4.One kind of the utility model has single distributing Prague
The light direction system of the vertical cavity surface emitting laser device of reflector group is downwards (shown in the arrow in Fig. 1).In some implementations
In example, through-hole 22 can further be designed to couple with an optical fiber (not shown).
Referring to Fig. 2, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the another specific embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 2 with it is shown in FIG. 1
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes a p+ type coating 39 and a n+ type coating
30.Wherein p+ type coating 39 is formed on electric current limitation layer 37；P-type contact metallic reflector 4 is formed in the covering of p+ type
On layer 39.Wherein the groove 6 of epitaxial structure 3 at least penetrates p+ type coating 39 and upper electric current limitation layer 37, so that in shape
Before dielectric barrier layer 5, upper electric current limitation layer 37 can expose oxygen contact by groove 6 and aoxidize and form upper periphery oxidation electricity
Stream limitation area 370.In some embodiments, p+ type coating 39 includes a p+ type aluminium arsenide sublevel 390 and a p+ type arsenic
Gallium sublevel 391 (GaAs), p+ type aluminium arsenide sublevel 390 are formed on electric current limitation layer 37,391 shape of p+ p type gallium arensidep sublevel
At on p+ type aluminium arsenide sublevel 390, p-type contact metallic reflector 4 is formed on p+ p type gallium arensidep sublevel 391.Wherein n
+ type coating 30 is formed on the upper surface 20 of compound semiconductor substrate 2；Single 31 shape of distributing Bragg reflector group
At on n+ type coating 30；Wherein the bottom 220 of through-hole 22 is defined by n+ type coating 30.In some embodiments, n
+ type coating 30 includes a n+ type aluminium arsenide sublevel 301 and a n+ p type gallium arensidep sublevel 300, wherein n+ p type gallium arensidep sublevel
300 are formed on the upper surface 20 of compound semiconductor substrate 2, and n+ type aluminium arsenide sublevel 301 is formed in n+ p type gallium arensidep
On layer 300, single distributing Bragg reflector group 31 is formed on n+ type aluminium arsenide sublevel 301；Wherein through-hole 22
Bottom 220 is defined by the n+ p type gallium arensidep sublevel 300 of n+ type coating 30.
Referring to Fig. 3, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 3 with it is shown in Fig. 2
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes a lower p-type coating layer 36.Wherein lower p-type coating layer
36 are formed on active layers 35, and upper electric current limitation layer 37 is formed on lower p-type coating layer 36.
Referring to Fig. 4, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 4 with it is shown in Fig. 2
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes p-type coating layer 38 on one.Wherein upper p-type coating layer
38 are formed on electric current limitation layer 37, and p+ type coating 39 is formed on p-type coating layer 38.Wherein epitaxial structure 3
Groove 6 at least penetrate p+ type coating 39, upper p-type coating layer 38 and upper electric current limitation layer 37 so that formed dielectric every
Before absciss layer 5, upper electric current limitation floor 37 can expose oxygen contact by groove 6 and oxidation forms upper peripheral oxidation current and limits to area
370。
Referring to Fig. 5, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of surface emitting laser device.The primary structure of embodiment shown in fig. 5 and reality shown in Fig. 4
The structure for applying example is roughly the same, however, wherein epitaxial structure 3 further includes a lower p-type coating layer 36.Wherein lower p-type coating layer 36
It is formed on active layers 35, upper electric current limitation layer 37 is formed on lower p-type coating layer 36.
Referring to Fig. 6, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the another specific embodiment of surface emitting laser device.The primary structure of embodiment shown in fig. 6 with it is shown in Fig. 3
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 32.Wherein descend N-shaped coating layer
32 are formed on single distributing Bragg reflector group 31, and active layers 35 are formed on lower N-shaped coating layer 32.
Referring to Fig. 7, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 7 with it is shown in Fig. 4
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 32.Wherein descend N-shaped coating layer
32 are formed on single distributing Bragg reflector group 31, and active layers 35 are formed on lower N-shaped coating layer 32.
Referring to Fig. 8, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 8 with it is shown in fig. 5
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 32.Wherein descend N-shaped coating layer
32 are formed on single distributing Bragg reflector group 31, and active layers 35 are formed on lower N-shaped coating layer 32.
Referring to Fig. 9, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of surface emitting laser device.The primary structure of embodiment shown in Fig. 9 and reality shown in FIG. 1
The structure for applying example is roughly the same, however, wherein epitaxial structure 3 further include N-shaped coating layer 32, a lower p-type coating layer 36 with
And p-type coating layer 38 on one.N-shaped coating layer 32 is wherein descended to be formed on single distributing Bragg reflector group 31, actively
Layer 35 is formed on lower N-shaped coating layer 32.Lower p-type coating layer 36 is formed on active layers 35, and upper electric current limits to 37 shape of layer
At on lower p-type coating layer 36.Upper p-type coating layer 38 is formed on electric current limitation layer 37, p-type contact metallic reflector
4 are formed on epitaxial structure 3 on p-type coating layer 38.Wherein the groove 6 of epitaxial structure 3 at least penetrates p-type coating layer 38
And upper electric current limits to layer 37, so that upper electric current limitation layer 37 can expose oxygen by groove 6 before forming dielectric barrier layer 5
Gas contacts and aoxidizes and form upper peripheral oxidation current limitation area 370.
Referring to Fig. 10, it is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the another specific embodiment of surface emitting laser device.Shown in the primary structure and Fig. 5 of embodiment shown in Fig. 10
Embodiment structure it is roughly the same, however, wherein epitaxial structure 3 further includes electric current limitation layer 33, wherein lower electric current office
Limit layer 33 is formed on single distributing Bragg reflector group 31, and active layers 35 are formed on lower electric current limitation layer 33,
Wherein descending electric current limitation floor 33 includes that peripheral oxidation current limits to area 330 and once center does not aoxidize open region 331,
In lower center do not aoxidize open region 331 and be located at and correspond to the lower section that center does not aoxidize open region 371.Wherein epitaxial structure 3
Groove 6 at least penetrate p+ type coating 39, upper p-type coating layer 38, upper electric current limitation layer 37, lower p-type coating layer 36, active layers
35 and lower electric current limit to layer 33 so that before forming dielectric barrier layer 5, upper electric current limitation layer 37 and lower electric current limitation layer
33 can expose oxygen contact by groove 6 and aoxidize to form peripheral oxidation current limitation area 370 and lower periphery oxidation respectively
Electric current limits to area 330.Wherein dielectric barrier layer 5 is at least formed on the inner surface of groove 6, and dielectric barrier layer 5 at least covers
Peripheral oxidation current limitation area 370 and lower electric current limit to periphery oxidation under floor 33 on electric current limitation floor 37 on firmly exposing
Electric current limits to area 330 so that on upper electric current limitation floor 37 peripheral oxidation current limitation area 370 and lower electric current limitation floor 33 it
Lower periphery oxidation current limitation area 330 does not continue to aoxidize.
Figure 11 is please referred to, is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.Shown in the primary structure and Figure 10 of embodiment shown in Figure 11
Embodiment structure it is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 32.Wherein descend N-shaped coating
Layer 32 is formed on single distributing Bragg reflector group 31, lower electric current limitation layer 33 be formed in lower N-shaped coating layer 32 it
On.
Figure 12 is please referred to, is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of the still another embodiment of surface emitting laser device.Shown in the primary structure and Figure 10 of embodiment shown in Figure 12
Embodiment structure it is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 34 on one, wherein upper N-shaped coating
Layer 34 is formed on lower electric current limitation layer 33, and active layers 35 are formed on N-shaped coating layer 34.Wherein epitaxial structure 3
Groove 6 at least penetrates p+ type coating 39, upper p-type coating layer 38, upper electric current limitation layer 37, lower p-type coating layer 36, active layers
35, upper N-shaped coating layer 34 and lower electric current limit to layer 33 so that before forming dielectric barrier layer 5, upper electric current limit to layer 37 with
And lower electric current limitation floor 33 can expose oxygen contact by groove 6 and aoxidize to form peripheral oxidation current limitation area 370 respectively
And lower peripheral oxidation current limits to area 330.
Figure 13 is please referred to, is a kind of vertical cavity with single distributing Bragg reflector group of the utility model
The diagrammatic cross-section of one specific embodiment of surface emitting laser device.Shown in the primary structure and Figure 12 of embodiment shown in Figure 13
The structure of embodiment is roughly the same, however, wherein epitaxial structure 3 further includes N-shaped coating layer 32.Wherein descend N-shaped coating layer
32 are formed on single distributing Bragg reflector group 31, and lower electric current limitation layer 33 is formed on lower N-shaped coating layer 32.
It is described above to be merely exemplary for the utility model, and not restrictive, those of ordinary skill in the art
Understand, without departing from the spirit and scope defined by the claims, can many modifications may be made, variation or it is equivalent, but
It falls within the protection scope of the utility model.
Claims (26)
1. a kind of vertical cavity surface emitting laser device with single distributing Bragg reflector group, which is characterized in that packet
It includes:
One compound semiconductor substrate, wherein the compound semiconductor substrate has a upper surface and a lower surface；
One N-shaped contact metal layer, is formed on the lower surface of the compound semiconductor substrate；
One epitaxial structure is formed on the upper surface of the compound semiconductor substrate, and wherein the epitaxial structure includes one single
Electric current limits to layer in one distributing Bragg reflector group, an active layers and one, in which: the single distributing Bragg reflection
Device group is formed on the upper surface of the compound semiconductor substrate, and wherein the single distributing Bragg reflector group is one
N-shaped distributing Bragg reflector group；The active layers are formed on the single distributing Bragg reflector group；Electric current on this
Limitation layer is formed on the active layers, and wherein electric current limitation floor includes on one in peripheral oxidation current limitation area and one on this
Center does not aoxidize open region；And
One p-type contact metallic reflector is formed on this of the epitaxial structure on electric current limitation layer, and the p-type contact metal
Reflecting layer is in contact with the epitaxial structure, and wherein the single distributing Bragg reflector group is that the vertical cavity surface emitting type swashs
A N-shaped catoptric arrangement of the light device under the active layers, wherein the p-type contact metallic reflector is the vertical cavity surface emitting type
A p-type catoptric arrangement of the laser on the active layers.
2. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the p-type contact metallic reflector has a reflectivity, and wherein the reflectivity is greater than or equal to 95%.
3. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the compound semiconductor substrate has a through-hole, and wherein the through-hole runs through the compound semiconductor substrate,
Wherein the via openings are downward, and wherein a bottom of the through-hole is defined by the single distributing Bragg reflector group, wherein
The through-hole, which is located at, corresponds to the lower section that center on this does not aoxidize open region.
4. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes a lower p-type coating layer, wherein the lower p-type coating layer be formed in the active layers it
On, electric current limitation layer is formed on the lower p-type coating layer on this.
5. the vertical cavity surface emitting type according to claim 1 or 4 with single distributing Bragg reflector group swashs
Light device, it is characterised in that: the epitaxial structure further includes a p+ type coating, and wherein the p+ type coating is formed in electric current office on this
It limits on layer, which is formed on the p+ type coating of the epitaxial structure.
6. the vertical cavity surface emitting laser (VCSEL) according to claim 5 with single distributing Bragg reflector group
Device, it is characterised in that: the p+ type coating includes a p+ type aluminium arsenide sublevel and a p+ p type gallium arensidep sublevel, wherein the p+ type
Aluminium arsenide sublevel is formed on this on electric current limitation layer, the p+ p type gallium arensidep sublevel be formed in the p+ type aluminium arsenide sublevel it
On, which is formed on the p+ p type gallium arensidep sublevel.
7. the vertical cavity surface emitting type according to claim 1 or 4 with single distributing Bragg reflector group swashs
Light device, it is characterised in that: the epitaxial structure further includes p-type coating layer on one, and wherein p-type coating layer is formed in electric current on this on this
Limit on layer, which is formed on this of the epitaxial structure on p-type coating layer.
8. the vertical cavity surface emitting laser (VCSEL) according to claim 7 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes a p+ type coating, and wherein the p+ type coating is formed in p-type coating on this
On layer, which is formed on the p+ type coating of the epitaxial structure.
9. the vertical cavity surface emitting laser (VCSEL) according to claim 8 with single distributing Bragg reflector group
Device, it is characterised in that: the p+ type coating includes a p+ type aluminium arsenide sublevel and a p+ p type gallium arensidep sublevel, wherein the p+ type
Aluminium arsenide sublevel is formed on this on p-type coating layer, which is formed on the p+ type aluminium arsenide sublevel,
The p-type contact metallic reflector is formed on the p+ p type gallium arensidep sublevel.
10. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes a n+ type coating, and wherein the n+ type coating is formed in the compound and partly leads
On the upper surface of structure base board, which is formed on the n+ type coating.
11. the vertical cavity surface emitting laser (VCSEL) according to claim 10 with single distributing Bragg reflector group
Device, it is characterised in that: the n+ type coating includes a n+ type aluminium arsenide sublevel and a n+ p type gallium arensidep sublevel, wherein the n+ type
GaAs sublevel is formed on the upper surface of the compound semiconductor substrate, which is formed in the n+ type
On GaAs sublevel, which is formed on the n+ type aluminium arsenide sublevel.
12. the vertical cavity surface emitting laser (VCSEL) according to claim 10 with single distributing Bragg reflector group
Device, it is characterised in that: the compound semiconductor substrate has a through-hole, and wherein the through-hole runs through the compound semiconductor substrate,
Wherein the via openings are downward, and wherein a bottom of the through-hole is defined by the n+ type coating, and wherein the through-hole is located at opposite
The lower section of open region should not be aoxidized in center on this.
13. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes an at least groove for opening upwards, wherein this at least a groove at least penetrates this
Upper electric current limits to layer so that on this electric current limitation floor this on peripheral oxidation current limitation area by least groove exposing.
14. the vertical cavity surface emitting laser (VCSEL) according to claim 13 with single distributing Bragg reflector group
Device, which is characterized in that further include a dielectric barrier layer, wherein the dielectric barrier layer at least covers in an at least groove and exposes
This on electric current limitation floor this on peripheral oxidation current limit to area.
15. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes electric current limitation layer, and wherein lower electric current limitation layer is formed in this single point
It dissipates on formula Bragg reflector group, which is formed on the lower electric current limitation layer, and wherein the lower electric current limits to layer packet
It includes peripheral oxidation current limitation area and once center does not aoxidize open region, wherein the lower center does not aoxidize open region and is located at
Correspond to the lower section that center on this does not aoxidize open region.
16. the vertical cavity surface emitting laser (VCSEL) according to claim 15 with single distributing Bragg reflector group
Device, it is characterised in that: the material for constituting the lower electric current limitation layer is aluminium arsenide.
17. the vertical cavity surface emitting laser (VCSEL) according to claim 15 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes an at least groove for opening upwards, wherein this at least a groove at least penetrates this
Lower electric current limits to layer so that on this electric current limitation floor this on peripheral oxidation current limitation area and lower electric current limitation floor should
Lower periphery oxidation current limitation area exposes by an at least groove.
18. the vertical cavity surface emitting laser (VCSEL) according to claim 17 with single distributing Bragg reflector group
Device, which is characterized in that further include a dielectric barrier layer, wherein the dielectric barrier layer at least covers in an at least groove and exposes
This on electric current limitation floor this on the lower peripheral oxidation current of this of peripheral oxidation current limitation area and lower electric current limitation floor
Limit to area.
19. the vertical cavity surface emitting laser (VCSEL) according to claim 15 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes N-shaped coating layer on one, and wherein N-shaped coating layer is formed in the lower electric current office on this
It limits on layer, which is formed on this on N-shaped coating layer.
20. according to claim 1 with the vertical cavity surface emitting type of single distributing Bragg reflector group described in 5 or 19
Laser, it is characterised in that: the epitaxial structure further includes N-shaped coating layer, and wherein it is single to be formed in this for the lower N-shaped coating layer
On distributing Bragg reflector group, which is formed on the lower N-shaped coating layer.
21. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the epitaxial structure further includes N-shaped coating layer, and wherein the lower N-shaped coating layer is formed in the single dispersion
On formula Bragg reflector group, which is formed on the lower N-shaped coating layer.
22. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the compound semiconductor substrate is made of GaAs.
23. the vertical cavity surface emitting laser (VCSEL) according to claim 22 with single distributing Bragg reflector group
Device, it is characterised in that: the compound semiconductor substrate is made of n+ p type gallium arensidep.
24. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the single distributing Bragg reflector group is stacked by least 20 N-shaped distributing Bragg reflectors
It forms, wherein each N-shaped distributing Bragg reflector includes a N-shaped aluminium arsenide layer and a N-shaped aluminum gallium arsenide layer, wherein
The N-shaped aluminium arsenide layer is formed on the N-shaped aluminum gallium arsenide layer.
25. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the material for constituting electric current limitation layer on this is aluminium arsenide.
26. the vertical cavity surface emitting laser (VCSEL) according to claim 1 with single distributing Bragg reflector group
Device, it is characterised in that: the material for constituting the p-type contact metallic reflector is gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920029510.XU CN209266844U (en) | 2019-01-08 | 2019-01-08 | Vertical cavity surface emitting laser device with single distributing Bragg reflector group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920029510.XU CN209266844U (en) | 2019-01-08 | 2019-01-08 | Vertical cavity surface emitting laser device with single distributing Bragg reflector group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209266844U true CN209266844U (en) | 2019-08-16 |
Family
ID=67584470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920029510.XU Expired - Fee Related CN209266844U (en) | 2019-01-08 | 2019-01-08 | Vertical cavity surface emitting laser device with single distributing Bragg reflector group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209266844U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180995A (en) * | 2019-11-19 | 2020-05-19 | 浙江博升光电科技有限公司 | Substrate transfer vertical cavity surface emitting laser and method of manufacturing the same |
| CN111416276A (en) * | 2019-01-08 | 2020-07-14 | 晶连股份有限公司 | Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group |
| CN111653938A (en) * | 2020-03-26 | 2020-09-11 | 厦门市三安集成电路有限公司 | Back-light-emitting surface-emitting laser structure and manufacturing method and application thereof |
| CN111682402A (en) * | 2020-06-19 | 2020-09-18 | 北京工业大学 | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof |
-
2019
- 2019-01-08 CN CN201920029510.XU patent/CN209266844U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416276A (en) * | 2019-01-08 | 2020-07-14 | 晶连股份有限公司 | Vertical resonant cavity surface emitting laser with single distributed Bragg reflector group |
| CN111180995A (en) * | 2019-11-19 | 2020-05-19 | 浙江博升光电科技有限公司 | Substrate transfer vertical cavity surface emitting laser and method of manufacturing the same |
| CN111653938A (en) * | 2020-03-26 | 2020-09-11 | 厦门市三安集成电路有限公司 | Back-light-emitting surface-emitting laser structure and manufacturing method and application thereof |
| CN111682402A (en) * | 2020-06-19 | 2020-09-18 | 北京工业大学 | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209266844U (en) | Vertical cavity surface emitting laser device with single distributing Bragg reflector group | |
| US10686100B2 (en) | Quartenary LED with transparent substrate and aligned electrodes | |
| JP3175270U (en) | Light emitting element | |
| US8134174B2 (en) | Light-emitting diode | |
| KR102071088B1 (en) | Semiconductor light emitting device lamp that emits light at large angles | |
| KR20060050164A (en) | Vcsel having an air gap and protective coating | |
| CN101964499B (en) | Semiconductor device and method of manufacturing the same | |
| JP2006108698A (en) | Contact for flip-chip light-emitting device and omnidirectional reflecting mirror | |
| US10109770B2 (en) | Method for manufacturing light emitting diode | |
| JP2018531517A (en) | Wavelength-converting light-emitting device with textured substrate | |
| JP2018531517A6 (en) | Wavelength-converting light-emitting device with textured substrate | |
| US9076931B2 (en) | Optoelectronic component and method for producing same | |
| US11450787B2 (en) | Light-emitting device | |
| US20230078225A1 (en) | Flip-chip light emitting diode (led) device | |
| US20170345970A1 (en) | Light-emitting diode | |
| KR102322335B1 (en) | Wafer Level Chip Scale Package | |
| JP6628727B2 (en) | Semiconductor light emitting device using processed substrate and method of manufacturing the same | |
| KR20210069026A (en) | Light emitting device and method of fabricating the same | |
| TWM577200U (en) | Vertical resonant chamber surface-emitting laser with single decentralized Bragg reflector set | |
| TWI751758B (en) | Micro light-emitting diode | |
| TWI846505B (en) | Micro light-emitting device and micro light-emitting device structure | |
| KR101567903B1 (en) | Light emitting device package and backlight unit | |
| US20230420612A1 (en) | Micro light-emitting device, micro light-emitting diode, and method for manufacturing micro light-emitting device | |
| TWI834220B (en) | Optoelectronic semiconductor device | |
| US20240030387A1 (en) | Light-emitting device and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190816 Termination date: 20210108 |