CN109873296A - A kind of vertical cavity surface emitting laser chip and production method - Google Patents
A kind of vertical cavity surface emitting laser chip and production method Download PDFInfo
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Abstract
The embodiment of the present invention provides a kind of vertical cavity surface emitting laser chip and production method, non- light-emitting surface (bottom surface) reflecting mirror of the facetted mirrors constituted using corresponding second multilayer material film mirror layer and metal mirror layer as VCSEL, and the logarithm of the second multilayer material film mirror layer is less than the logarithm of (top surface) the light-emitting surface reflecting mirror for the VCSEL being made of the first multilayer material film mirror layer, and the reflectivity of the second multilayer material film mirror layer is lower than the reflectivity of the first multilayer material film mirror layer.The bottom reflection mirror that the said combination reflecting mirror of use is constituted instead of the distributed bragg reflector mirror below traditional the second covering of vertical cavity surface emitting laser chip, required high reflectance can be obtained in the case where less material membrane mirror layer logarithm, corresponding material stress and series resistance can be reduced simultaneously, the performance of device is promoted in the case where reducing device making technics difficulty.
Description
Technical field
The present embodiments relate to technical field of photo communication, more particularly, to a kind of vertical cavity surface emitting laser core
Piece and production method.
Background technique
For vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL),
Since 1996 put it into commercial operation, such as optic communication, information reading, three-dimensional imaging, laser radar are obtained in many fields
It must be widely applied.Therefore countless researcher is studying VCSEL and is using in the latest 20 years, with science and technology
It continues to develop and progressive, various vertical cavity surface emitting lasers (VCSEL) are because it is with small in size, round output light
Spot, single longitudinal mode output, threshold current is low, small power consumption, low in cost and be easy to the advantages that array is integrated and penetrated into people's
In the production of daily life, work entertainment and all trades and professions, huge work is played for people's lives progress and social development
With.
But structure used by VCSEL chip is upper and lower double distributed bragg reflector mirror (Distributed at present
Bragg Relection, DBR) constitute the structure of laser resonant cavity, the two DBR are in Quantum Well or quantum dot active region
Upper and lower two sides provide sufficiently high reflectivity respectively, and to form optical resonance enhancement effect, to provide, laser diode current injection is lower to swash
Penetrate the required gain of light.Reflectivity requirements needed for its DBR are very high, or even are greater than 99%, and this requires make the material of DBR
Expect that the logarithm of film layer is enough, or even to be more than 40 pairs.There is some difficult points in realization by the DBR of so many logarithm, such as
The logarithm of DBR is more, and the stress generated also can be bigger, can deteriorate the performance of device to a certain extent；Moreover, because scattering
Influence and Material growth during error influence, be not that the logarithm of DBR increases, reflectivity will increase therewith,
But when DBR logarithm reaches certain amount, reflectivity will be saturated；In addition, DBR logarithm increase also results in the string of device
Join resistance to increase, can also deteriorate the performance of device.
Summary of the invention
It is vertical that the embodiment of the present invention provides a kind of one kind for overcoming the above problem or at least being partially solved the above problem
Cavity surface emitting lasers chip and production method.
In a first aspect, the embodiment of the present invention provides a kind of vertical cavity surface emitting laser chip, including on the second substrate
Non- light-emitting surface reflecting mirror, the second covering, quantum well layer or quantum dot layer, the first covering, current-limiting layer, the out light stacked gradually
Face reflecting mirror and ohmic contact layer；
The non-light-emitting surface reflecting mirror includes the metal mirror layer stacked gradually on the second substrate and the second multilayer material
Film mirror layer；The light-emitting surface reflecting mirror includes the first multilayer material film reflecting mirror being laminated on the current-limiting layer
Layer；And the logarithm of the second multilayer material film mirror layer is less than the logarithm of the first multilayer material film mirror layer, institute
The reflectivity for stating the second multilayer material film mirror layer is lower than the reflectivity of the first multilayer material film mirror layer；Described
One multilayer material film mirror layer and/or the second multilayer material film mirror layer are the multilayer material of insertion phase optimization layer
Film mirror structure.
Second aspect, the embodiment of the present invention provide a kind of vertical cavity surface emitting laser chip manufacture method, comprising:
Ohmic contact layer, light-emitting surface reflecting mirror, current-limiting layer, the first covering, quantum are successively grown on the first substrate
Well layer or quantum dot layer, the second covering and non-light-emitting surface reflecting mirror；Wherein, the non-light-emitting surface reflecting mirror includes on the second covering
The the second multilayer material film mirror layer and metal mirror layer stacked gradually；The light-emitting surface reflecting mirror is included in described ohm
The first multilayer material film mirror layer being laminated on contact layer；And the logarithm of the second multilayer material film mirror layer is less than institute
The logarithm of the first multilayer material film mirror layer is stated, the reflectivity of the second multilayer material film mirror layer is lower than described first
The reflectivity of multilayer material film mirror layer；The first multilayer material film mirror layer and/or the second multilayer material film
Mirror layer is the multilayer material film mirror structure of insertion phase optimization layer.
The metal mirror layer is bonded on the second substrate, first substrate is removed；Etch the Ohmic contact
Layer, the first multilayer material film mirror layer, current-limiting layer, the first covering, quantum well layer or quantum dot layer, the second covering, with
Expose the second multilayer material film mirror layer.
The embodiment of the present invention proposes a kind of vertical cavity surface emitting laser chip and production method, using corresponding second
The facetted mirrors that multilayer material film mirror layer and metal mirror layer are constituted is reflected as the bottom surface (non-light-emitting surface) of VCSEL
Mirror, and the logarithm of the second multilayer material film mirror layer is less than the VCSEL's being made of the first multilayer material film mirror layer
The reflectivity of the logarithm of top surface (light-emitting surface) reflecting mirror, the second multilayer material film mirror layer is reflected lower than the first multilayer material film
The reflectivity of mirror layer.The said combination reflecting mirror of use is instead of traditional vertical cavity surface emitting laser (VCSEL) chip
The bottom reflection mirror that distributed bragg reflector mirror below two coverings is constituted, can be in less material membrane mirror layer logarithm
In the case where obtain required high reflectance, while corresponding material stress and series resistance can be reduced, reduce device system
Make the performance that device is promoted in the case where technology difficulty.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the vertical cavity surface emitting laser chip schematic diagram according to the embodiment of the present invention；
Fig. 2 is the multilayer material film mirror structure schematic diagram according to the insertion phase optimization layer of the embodiment of the present invention；
Fig. 3 is the vertical cavity surface emitting laser chip manufacture method schematic diagram according to the embodiment of the present invention；
Fig. 4 is the vertical cavity surface emitting laser chip manufacture method idiographic flow schematic diagram according to the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The structure as used by current VCSEL chip is that double distributed bragg reflector mirrors are humorous to constitute laser up and down
The structure of vibration chamber, the two sides above and below Quantum Well or quantum dot active region the two DBR provide sufficiently high reflectivity respectively and carry out shape
The gain of light required for lower lasing is injected at optical resonance enhancement effect to provide laser diode current.Reflectivity needed for its DBR
It is required that it is very high, or even it is greater than 99%, it is enough this requires making the logarithm of the material film layers of DBR, or even to be more than 40
It is right.There is some difficult points in realization by the DBR of so many logarithm, and the logarithm such as DBR is more, and the stress generated can also be got over
Greatly, the performance of device can be deteriorated to a certain extent；Moreover, because error during the influence of scattering and Material growth
It influencing, is not that the logarithm of DBR increases, reflectivity will increase therewith, but when DBR logarithm reaches certain amount,
Reflectivity will be saturated；In addition, the series resistance that DBR logarithm increase also results in device increases, it can also deteriorate the performance of device.
Therefore various embodiments of the present invention provide the new high reflectivity mirror structure of one kind to reduce required material film
Layer logarithm.Expansion explanation and introduction will be carried out by multiple embodiments below.
Fig. 1 be a kind of vertical cavity surface emitting laser chip provided in an embodiment of the present invention, including on the second substrate 8 according to
Non- light-emitting surface reflecting mirror, the second covering 5, quantum well layer or the quantum dot layer 4 of secondary growth, the first covering 3, current-limiting layer 11,
Light-emitting surface reflecting mirror and ohmic contact layer 10；
Above-mentioned non-light-emitting surface reflecting mirror includes the metal mirror layer 7 stacked gradually on the second substrate 8 and the second multilayer material
Expect film mirror layer 6；Above-mentioned light-emitting surface reflecting mirror includes that the first multilayer material film for being laminated on above-mentioned current-limiting layer 11 is anti-
Penetrate mirror layer 2；And the logarithm of above-mentioned second multilayer material film mirror layer 6 is less than above-mentioned first multilayer material film mirror layer 2
Logarithm, the reflectivity of above-mentioned second multilayer material film mirror layer 6 are lower than the reflection of above-mentioned first multilayer material film mirror layer 2
Rate；The first multilayer material film mirror layer 2 and/or the second multilayer material film mirror layer 6 are insertion phase optimization
The multilayer material film mirror structure of layer.
Said combination reflecting mirror used in the embodiment of the present invention instead of traditional upper and lower double distributed bragg reflector mirrors,
Required high reflectance can be obtained in the case where less material membrane mirror layer logarithm, while corresponding material can be reduced
Expect stress and series resistance, the performance of device is promoted in the case where reducing device making technics difficulty.
In the present embodiment, 6 double-layer structure of the first multilayer material film mirror layer 2 and the second multilayer material film mirror layer
One or be insertion phase optimization layer multilayer material film mirror structure.Wherein, the multilayer material of insertion phase optimization layer
Film mirror structure is, in multilayer material film mirror structure, is inserted into two to three layers of phase optimization layer.The reflection of multilayer material film
Mirror is separated by phase optimization layer, and each section mirror center wavelength can be the same or different.According to material membrane reflecting mirror
Concrete function does not limit in the present embodiment.
Fig. 2 (a) is a kind of multilayer material film mirror structure of insertion phase optimization layer provided in an embodiment of the present invention, packet
It is anti-to include the first reflecting mirror 201 from top to bottom stacked gradually, first phase optimization layer 202, second phase optimization layer 203 and second
Penetrate mirror 204.Wherein, the first reflecting mirror 201 and 204 central wavelength of the second reflecting mirror can be the same or different.
Fig. 2 (b) is a kind of multilayer material film mirror structure of insertion phase optimization layer provided in an embodiment of the present invention, packet
It is anti-to include the first phase optimization layer 202 from top to bottom stacked gradually, the first reflecting mirror 201, second phase optimization layer 203 and second
Penetrate mirror 204.Wherein, the first reflecting mirror 201 and 204 central wavelength of the second reflecting mirror can be the same or different.
Fig. 2 (c) is a kind of multilayer material film mirror structure of insertion phase optimization layer provided in an embodiment of the present invention, packet
It is excellent to include the third reflecting mirror 205 from top to bottom stacked gradually, first phase optimization layer 202, the first reflecting mirror 201, second phase
Change layer 203 and the second reflecting mirror 204.Wherein, the center of third reflecting mirror 205, the second reflecting mirror 204 and the first reflecting mirror 201
Wavelength may be the same or different.
In the above embodiments, Fig. 2 (a), (b), the first reflecting mirror 201 is principal reflection mirror in (c), wherein cardiac wave is a length of
VCSEL operation wavelength, i.e. VCSEL resonant wavelength, other first phase optimization layers 202,203 and of second phase optimization layer
The effect of second reflecting mirror 204, third reflecting mirror 205 is to optimize the optical phase and its reflection characteristic of principal reflection mirror, protect
The optical phase and its reflection characteristic that principal reflection mirror is adjusted under conditions of card VCSEL resonant wavelength is constant improve main anti-
Mirror is penetrated to the reflection characteristic of different angle incident light and different wave length incident light.
On the basis of the various embodiments described above, a kind of example structure is the first reflecting mirror 201 by 20 pairs of p-type dopings
Al0.15Ga0.85As/Al0.9Ga0.1As semiconductor material is constituted, and third reflecting mirror 205 is made of Air Interface and GaAs material, the
Two-mirror 204 is by 2 couples of p-type doping Al0.15Ga0.85As/Al0.9Ga0.1As material is constituted, and first phase optimization layer 202 is by 5nm
The Al of thick GaAs layer and 114nm thickness0.9Ga0.1As layers composition, second phase optimization layer 203 by 165nm thickness Al0.15Ga0.85As
The Al of layer and 114nm thickness0.9Ga0.1As layers of composition.
On the basis of the various embodiments described above, a kind of example structure is the first reflecting mirror 201 by 28 pairs of p-type dopings
Al0.15Ga0.85As/Al0.9Ga0.1As semiconductor material is constituted, and third reflecting mirror 205 is by 1 couple of p-type doping Al0.15Ga0.85As/
Al0.9Ga0.1As semiconductor material is constituted, and the second reflecting mirror 204 is by 1 couple of p-type doping Al0.15Ga0.85As/Al0.9Ga0.1As is partly led
Body material constitute, first phase optimization layer 202 by 100nm thickness Al0.9Ga0.1As material constitute, second phase optimization layer by
The Al of 85nm thickness0.15Ga0.85As material is constituted.
On the basis of the various embodiments described above, a kind of example structure is the first reflecting mirror 201 by 28 pairs of p-type dopings
Al0.15Ga0.85As/Al0.9Ga0.1As semiconductor material is constituted, and third reflecting mirror 205 is by 2 couples of p-type doping Al0.15Ga0.85As/
Al0.9Ga0.1As semiconductor material is constituted, and the second reflecting mirror 204 is by 1 couple of p-type doping Al0.15Ga0.85As/Al0.9Ga0.1As is partly led
Body material constitute, first phase optimization layer 202 by 37nm thickness Al0.9Ga0.1As material constitute, second phase optimization layer by
The Al of 151nm thickness0.15Ga0.85As material is constituted.
On the basis of the above embodiments, above-mentioned first multilayer material film mirror layer 2 and above-mentioned second multilayer material film
The multilayer material film of mirror layer 6 is deielectric-coating or semiconductor material film, or common by semiconductor material and medium membrane material
The material membrane of formation.Specifically, medium membrane material can be silicon, silica, silicon monoxide, magnesium fluoride, aluminium oxide, oxidation
Titanium, cerium oxide, cerium fluoride, zinc sulphide and silicon nitride etc..Semiconductor material can for gallium arsenic, aluminium arsenic, indium gallium arsenic, aluminum gallium arsenide,
Indium aluminum gallium arsenide, indium phosphorus, gallium nitrogen, indium gallium nitrogen, indium gallium nitrogen arsenic and InGaAsP etc..
In the present embodiment, specific second substrate 8 is the GaAs that p-type is mixed up.Its first multilayer material film mirror layer 2
Multilayer material with the second multilayer material film mirror layer 6 is Al0.15Ga0.85As/Al0.9Ga0.1As material.
In the present embodiment, being specifically also possible to the second substrate 8 is the GaAs that N-shaped mixes up.Wherein the first multilayer material
The multilayer material of film mirror layer 2 and the second multilayer material film mirror layer 6 is GaAs/AlAs material.
In the present embodiment, being specifically also possible to the second substrate 8 is the Si that N-shaped mixes up.Wherein the first multilayer material film
The multilayer material of mirror layer 2 and the second multilayer material film mirror layer 6 is GaAs/Al0.9Ga0.1As material.
In the present embodiment, being specifically also possible to the second substrate 8 is the InP that N-shaped mixes up.Wherein the first multilayer material film
The multilayer material of mirror layer 2 and the second multilayer material film mirror layer 6 is InAlGaAs1/InAlGaAs2 material,
There is InAlGaAs1 and InAlGaAs2 material different components to constitute.
In the present embodiment, being specifically also possible to the second substrate 8 is metal substrate Cu.Wherein the first multilayer material film is anti-
The multilayer material for penetrating mirror layer 2 and the second multilayer material film mirror layer 6 is SiO2/ Si material.
On the basis of the above embodiments, second electrode 9 is additionally provided on above-mentioned second substrate 8；Above-mentioned ohmic contact layer 10
On be additionally provided with first electrode 1.
In the present embodiment, as shown in Figure 1, vertical cavity surface emitting laser (VCSEL) chip further includes being arranged in ohm
First electrode 1 on contact layer 10, wherein ohmic contact layer 10 can be but be not limited to GaAs the or InP material of n-type doping, this
When first electrode 1 can be but not limited to be made of AuGe/Ni/Au material, ohmic contact layer 10 or but be not limited to p-type
GaAs the or InP material of doping, first electrode 1 can be but not limited to be made of Ti/Pt/Au material at this time.Further,
As shown in Figure 1, vertical cavity surface emitting laser (VCSEL) chip further include: the second electrode 9 on the second substrate 8 is set, the
Two substrates 8 can be GaAs the or InP material of n-type doping, and second electrode 9 can be but not limited to by AuGe/Ni/Au material at this time
Material is constituted, the second substrate 8 or but be not limited to GaAs the or InP material of p-type doping, at this time second electrode 9 can be but
It is not limited to be made of Ti/Pt/Au material.
On the basis of the above embodiments, above-mentioned 4 material of Quantum Well/quantum dot layer be AlGaAs, GaAs, GaN, InGaN,
InGaAs, InGaAsP, InGaAsN or InGaAlAs.
In the present embodiment, specifically, 4 material of quantum well layer/quantum dot layer can be according to the vertical-cavity surface-emitting of design
The selection of laser (VCSEL) operation wavelength.
In the present embodiment, the material of metal mirror layer 7 is the high-reflectivity metals materials such as Au or Al or Ag or Ge,
The material of metal mirror layer 7 may be the alloy material of a variety of high-reflectivity metal materials.
On the basis of the various embodiments described above, above-mentioned current-limiting layer 11 includes Al2O3Material layer region and it is located at
Al2O3The AlGaAs material layer region or InAlGaAs material layer region in material layer region center.Specific production method is Al component
AlGaAs material layer or InAlGaAs material layer surrounding greater than 90% are changed into Al by wet process oxidation technology2O3Material layer area
Domain is made, and makes Al2O3The AlGaAs material layer or InAlGaAs material layer that material layer region surrounds do not aoxidize；Form 2~15 μm
The AlGaAs material layer region or InAlGaAs material layer region, the electric current as current-limiting layer of diameter pass through window.
On the basis of the various embodiments described above, the GaAs mixed up in the present embodiment using N-shaped as the second substrate 8, wherein
First multilayer material film mirror layer 2 is 32.5 couples of p-type doping Al0.9Ga0.1As/Al0.15Ga0.85What As semiconductor material was constituted
Multilayer material film reflecting mirror, the second multilayer material film reflecting mirror 6 are 24 couples of n-type doping Al0.9Ga0.1As/Al0.15Ga0.85As is partly led
The multilayer material film reflecting mirror that body material is constituted.The material of above-mentioned metal mirror layer 7 includes but is not limited to Au material or Al material
The high-reflectivity metals material such as material or Ag or Ge material, specifically, the material of metal mirror layer 7 may be a variety of high reflections
The alloy material of rate metal material, is not construed as limiting in embodiments of the present invention.Above-mentioned 4 material of quantum well layer/quantum dot layer is
The materials such as AlGaAs, GaAs, GaN, InGaN, InGaAs, InGaAsP, InGaAsN or InGaAlAs.Specifically, quantum well layer/
4 material of quantum dot layer can be selected according to vertical cavity surface emitting laser (VCSEL) operation wavelength of design, and the present embodiment is not made
It is specific to limit.Further, as shown in Figure 1, above-mentioned vertical cavity surface emitting laser (VCSEL) chip further includes being arranged above-mentioned
First electrode 1 on ohmic contact layer 10, wherein above-mentioned first electrode 1 is Ti/Pt/Au metal material electrode, metal material
In embodiments of the present invention and it is not construed as limiting.Further, as shown in Figure 1, above-mentioned vertical cavity surface emitting laser (VCSEL) core
Piece further include: the second electrode 9 on above-mentioned second substrate 8 is set.Wherein, above-mentioned second electrode 9 is AuGe/Ni/Au metal
Material electrodes, metal material in embodiments of the present invention and are not construed as limiting.
On the basis of the various embodiments described above, the GaAs mixed up in the present embodiment using p-type as the second substrate 8, wherein
First multilayer material film mirror layer 2 is 32.5 couples of n-type doping Al0.9Ga0.1As/Al0.15Ga0.85What As semiconductor material was constituted
Multilayer material film reflecting mirror, the second multilayer dielectric film reflecting mirror 6 are 24 couples of p-type doping Al0.9Ga0.1As/Al0.15Ga0.85As is partly led
The multilayer material film reflecting mirror that body material is constituted, it is possible thereby to further decrease the resistance of mirror layer structure.Above-mentioned metal is anti-
The material for penetrating mirror layer 7 is Au material or the high-reflectivity metals material such as Al material or Ge material, specifically, metal mirror layer 7
Material may be a variety of high-reflectivity metal materials alloy material, be not construed as limiting in embodiments of the present invention.Above-mentioned amount
Sub- 4 material of well layer/quantum dot layer is AlGaAs, GaAs, GaN, InGaN, InGaAs, InGaAsP, InGaAsN or InGaAlAs
Equal materials.Specifically, 4 material of quantum well layer/quantum dot layer can be according to vertical cavity surface emitting laser (VCSEL) work of design
Make wavelength selection, the present embodiment is not especially limited.Further, as shown in Figure 1, above-mentioned vertical cavity surface emitting laser
(VCSEL) chip further includes the first electrode 1 being arranged on above-mentioned ohmic contact layer 10, wherein above-mentioned first electrode 1 is
AuGe/Ni/Au metal material electrode, metal material in embodiments of the present invention and are not construed as limiting.Further, such as Fig. 1 institute
Show, above-mentioned vertical cavity surface emitting laser (VCSEL) chip further include: the second electrode 9 on above-mentioned second substrate 8 is set.
Wherein, above-mentioned second electrode 9 is Ti/Pt/Au metal material electrode, and metal material does not limit in embodiments of the present invention
It is fixed.
The multilayer material film reflecting mirror and metallic mirror that the various embodiments described above of the present invention use collectively form non-light-emitting surface
(bottom) reflecting mirror replaces in conventional VCSEL structure double distributed bragg reflector mirrors up and down, and by multilayer material film
Phase optimization layer is added in reflecting mirror come adjust corresponding reflecting mirror to the reflection characteristic of incidence angles degree and wavelength incident light with
Form the optimization to VCSEL working characteristics.The all necessary enough height of the reflectivity of the two DBR of the structural requirement of VCSEL, even
Reach 99% or more, and the reflectance of reflector of non-light-emitting surface is needed to be higher than the reflectivity of light emission side reflecting mirror, this will
Ask the logarithm of the material film layers of DBR enough, even more than 40 pairs.The alternative scheme that the various embodiments described above of the present invention are proposed
The logarithm of material membrane thin layer can be reduced, to lower the manufacture difficulty of technique and reduce the series resistance of structure, is promoted and is hung down
The performance of straight cavity surface-emitting laser (VCSEL).
A kind of vertical cavity surface emitting laser chip manufacture method is additionally provided in the present embodiment, as shown in Figure 3, comprising:
S1, ohmic contact layer 10, light-emitting surface reflecting mirror, current-limiting layer 11, first are successively grown on the first substrate 301
Covering 3, quantum well layer or quantum dot layer 4, the second covering 5 and non-light-emitting surface reflecting mirror；Wherein, the non-light-emitting surface reflecting mirror packet
Include the second multilayer material film mirror layer 6 and metal mirror layer 7 stacked gradually on the second covering 5；The light-emitting surface reflection
Mirror includes the first multilayer material film mirror layer 2 being laminated on the ohmic contact layer 10；And the second multilayer material film
The logarithm of mirror layer 6 is less than the logarithm of the first multilayer material film mirror layer 2, the second multilayer material film reflecting mirror
The reflectivity of layer 6 is lower than the reflectivity of the first multilayer material film mirror layer 2；The first multilayer material film mirror layer
2 and/or the second multilayer material film mirror layer 6 be insertion phase optimization layer multilayer material film mirror structure.
S2, the metal mirror layer 7 is bonded on the second substrate, removes first substrate 301, etches the Europe
Nurse contact layer 10, the first multilayer material film mirror layer 2, current-limiting layer 11, the first covering 3, quantum well layer or quantum dot layer
4, the second covering 5, to expose the second multilayer material film mirror layer 6.
As shown in Figure 4, comprising:
S11, the first substrate 301 is provided；Specifically, first substrate 301 is p-type doping GaAs substrate, at it
Surface grown epitaxial layer structure.
S12, ohmic contact layer 10, the first multilayer material film mirror layer 2, electric current are successively grown on the first substrate 301
Limiting layer 11, the first covering 3, quantum well layer or quantum dot layer 4, the second covering 5, the second multilayer material film mirror layer 6 and gold
Belong to mirror layer 7；
Specifically, the ohmic contact layer 10 is GaAs ohmic contact layer；First multilayer material film mirror layer 2 is equivalent to
The mirror layer on top covering in traditional formal dress VCSEL chip, by Al in the present embodiment0.1Ga0.9As/Al0.9Ga0.1As structure
At；The material of current-limiting layer 11 is the AlGaAs material of high Al component, chooses Al in the present embodiment0.96Ga0.04As；First
3 material of covering is Al0.3Ga0.7As material；4 material of quantum well layer is 3 couples of GaAs/Al0.3Ga0.7As Quantum Well；Second covering, 5 material
Material is Al0.3Ga0.7As material, by Al in 6 the present embodiment of the second multilayer material film mirror layer0.1Ga0.9As/Al0.9Ga0.1As structure
At；The material of metal mirror layer 7 is the high-reflectivity metals materials such as Au or Al or Ag or Ge, specifically, metal mirror layer 7
Material may be a variety of high-reflectivity metal materials alloy material.
S21, the second substrate 8 of selection, the metal mirror layer 7 are bonded on second substrate 8, while removing the
One substrate 301；
Ohmic contact layer 10 described in S22, etched portions, part the first multilayer material film mirror layer 2, the part electric current
Limiting layer 11, the first covering of part 3, part Quantum Well or quantum dot layer 4 and the second covering of part 5 are until expose described second
Multilayer material film mirror layer 6.Specifically, determining the pattern mask of vcsel structure by photoetching, then pass through dry etching
Technique etched portions described in ohmic contact layer 10, part the first multilayer material film mirror layer 2, the part current-limiting layer
11, the first covering of part 3, part quantum well layer/quantum dot layer 4 and the second covering of part 5 form mesa structure.
In addition, etching complete after by wet oxidation limit current to layer 11 from outside to inside aoxidize, high Al group
The material divided can form Al due to oxidation2O3Material, and the aperture for retaining intermediate 6 micron diameter sizes is not oxidized.
Al2O3Material can play the role of current limit, inject electric current by intermediate specific not oxidized region, with
It improves electric current and injects density.
On the basis of the various embodiments described above, further includes:
First electrode 1 is formed on the ohmic contact layer 10, and second electrode 9 is formed on second substrate 8.
First electrode 1 is formed in 10 side of ohmic contact layer.
Specifically, carrying out being lithographically formed electrode pattern window on the ohmic contact layer 10, then first electricity is deposited
Pole 1, the first electrode 1 are Ti/Pt/Au metal material, in the embodiment of the present invention without limitation.Then pass through chemical method again
It is removed, first electrode 1 completes.
Second electrode 9 is formed on second substrate 8.
Specifically, the second electrode 9, second electricity is deposited after second substrate 8 is carried out attenuated polishing processing
Pole 9 is AuGe/Ni/Au metal material electrode, in the embodiment of the present invention without limitation.
On the basis of the various embodiments described above, the current-limiting layer 11 is the AlGaAs material layer that Al component is greater than 90%
Or InAlGaAs material layer surrounding is changed into Al by wet process oxidation technology2O3Material layer region is made, and makes Al2O3Material layer area
The AlGaAs material layer or InAlGaAs material layer that domain surrounds do not aoxidize；Form the AlGaAs material layer region of 2~15 μ m diameters
Or InAlGaAs material layer region, the electric current as current-limiting layer pass through window.
On the basis of the various embodiments described above, the quantum well layer or 4 material of quantum dot layer be AlGaAs, GaAs, GaN,
InGaN, InGaAs, InGaAsP, InGaAsN or InGaAlAs.
In conclusion a kind of vertical cavity surface emitting laser chip provided in an embodiment of the present invention and production method, it will be more
Layer material film mirror layer and metal mirror layer combine the reflecting mirror of composition instead of double up and down in conventional VCSEL structure
Distributed bragg reflector mirror, the DBR in traditional structure need very high reflectivity even 99% or more, therefore the two DBR
With regard to needing multipair material film layers, this makes difficulty in technique and since plural layers stress is larger, also will affect vertical
Cavity surface emitting lasers (VCSEL) performance.Alternative scheme proposed by the invention can reduction technology difficulty largely,
The manufacture difficulty of vertical cavity surface emitting laser (VCSEL) is not only reduced from technique while can reduce the series electrical of structure
Resistance makes vertical cavity surface emitting laser proposed by the present invention (VCSEL) chip have low-voltage.And proposed by the invention replaces
Two reflecting mirrors are enabled to have very high reflectivity for scheme, thus in vertical cavity surface emitting laser (VCSEL) structure
It can be realized the high resonance of light field, structural behaviour can also greatly promote.It follows that vertical-cavity surface-emitting proposed by the present invention swashs
Light device (VCSEL) chip can be applied to optic communication, light network and optical storage etc., in information such as cloud computing, 5G, big datas
The development for promoting China related communications technologies field today of science and technology rapid development.And powerful VCSEL can be good at
Instead of light sources such as traditional EELD and LED, played in emerging fields such as illumination, medical treatment, LiDar laser acquisition and 3D identifications huge
Effect, and further have very big application development space.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of vertical cavity surface emitting laser chip, which is characterized in that including the non-light out stacked gradually on the second substrate
Face reflecting mirror, the second covering, quantum well layer or quantum dot layer, the first covering, current-limiting layer, light-emitting surface reflecting mirror and ohm connect
Contact layer；
The non-light-emitting surface reflecting mirror includes that the metal mirror layer stacked gradually on the second substrate and the second multilayer material film are anti-
Penetrate mirror layer；The light-emitting surface reflecting mirror includes the first multilayer material film mirror layer being laminated on the current-limiting layer；And
The logarithm of the second multilayer material film mirror layer be less than the first multilayer material film mirror layer logarithm, described second
The reflectivity of multilayer material film mirror layer is lower than the reflectivity of the first multilayer material film mirror layer；First multilayer
Material membrane mirror layer and/or the second multilayer material film mirror layer are that the multilayer material film of insertion phase optimization layer reflects
Mirror structure.
2. vertical cavity surface emitting laser chip according to claim 1, which is characterized in that the first multilayer material film
The multilayer material of mirror layer and the second multilayer material film mirror layer is deielectric-coating or semiconductor material film.
3. vertical cavity surface emitting laser chip according to claim 1, which is characterized in that deviate from second substrate
The side of the metal mirror layer is additionally provided with second electrode；First electrode is additionally provided on the ohmic contact layer.
4. vertical cavity surface emitting laser chip according to claim 1, which is characterized in that the Quantum Well or quantum dot
Layer material is AlGaAs, GaAs, GaN, InGaN, InGaAs, InGaAsP, InGaAsN or InGaAlAs.
5. vertical cavity surface emitting laser chip according to claim 1, which is characterized in that the metal mirror layer is
High-reflectivity metal material, the high-reflectivity metal material include the alloy material of Au, Al and Ag and Au, Al and Ag.
6. vertical cavity surface emitting laser chip according to claim 1, which is characterized in that the current-limiting layer includes
Al2O3Material layer region and be located at Al2O3The AlGaAs material layer region in material layer region center or InAlGaAs material layer area
Domain.
7. a kind of vertical cavity surface emitting laser chip manufacture method characterized by comprising
Ohmic contact layer, light-emitting surface reflecting mirror, current-limiting layer, the first covering, quantum well layer are successively grown on the first substrate
Or quantum dot layer, the second covering and non-light-emitting surface reflecting mirror；Wherein, the non-light-emitting surface reflecting mirror include the second covering on successively
The the second multilayer material film mirror layer and metal mirror layer of stacking；The light-emitting surface reflecting mirror is included in the Ohmic contact
The first multilayer material film mirror layer being laminated on layer；And the logarithm of the second multilayer material film mirror layer is less than described the
The reflectivity of the logarithm of one multilayer material film mirror layer, the second multilayer material film mirror layer is lower than first multilayer
The reflectivity of material membrane mirror layer；The first multilayer material film mirror layer and/or the second multilayer material film reflection
Mirror layer is the multilayer material film mirror structure of insertion phase optimization layer；
The metal mirror layer is bonded on the second substrate, first substrate is removed；Etch the ohmic contact layer,
One multilayer material film mirror layer, current-limiting layer, the first covering, quantum well layer or quantum dot layer, the second covering, to expose
The second multilayer material film mirror layer.
8. vertical cavity surface emitting laser chip manufacture method according to claim 7, which is characterized in that further include:
First electrode is formed away from the side of the first multilayer material film mirror layer in the ohmic contact layer, described the
Two substrates form second electrode away from the metal mirror layer side.
9. vertical cavity surface emitting laser chip manufacture method according to claim 7, which is characterized in that the electric current limit
Preparative layer is that AlGaAs material layer of the Al component greater than 90% or InAlGaAs material layer surrounding are changed by wet process oxidation technology
Al2O3Material layer region is made, and makes Al2O3The AlGaAs material layer or InAlGaAs material layer that material layer region surrounds not oxygen
Change；Form the AlGaAs material layer region or InAlGaAs material layer region of 2~15 μ m diameters, the electric current as current-limiting layer
Pass through window.
10. vertical cavity surface emitting laser chip manufacture method according to claim 7, which is characterized in that the quantum
Trap or dot layer material are AlGaAs, GaAs, GaN, InGaN, InGaAs, InGaAsP, InGaAsN or InGaAlAs.
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| CN112186503A (en) * | 2020-10-21 | 2021-01-05 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN113258442A (en) * | 2021-07-14 | 2021-08-13 | 华芯半导体研究院(北京)有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN114552380A (en) * | 2020-11-25 | 2022-05-27 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, chip, laser, forming method and laser radar |
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| CN113258442A (en) * | 2021-07-14 | 2021-08-13 | 华芯半导体研究院(北京)有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
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