JP2000068604A - Vertical resonator type surface emitting laser element - Google Patents
Vertical resonator type surface emitting laser elementInfo
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- JP2000068604A JP2000068604A JP10239946A JP23994698A JP2000068604A JP 2000068604 A JP2000068604 A JP 2000068604A JP 10239946 A JP10239946 A JP 10239946A JP 23994698 A JP23994698 A JP 23994698A JP 2000068604 A JP2000068604 A JP 2000068604A
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- emitting laser
- mirror
- substrate
- surface emitting
- layer
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、垂直共振器型面発
光レーザ素子に関し、更に詳細には低しきい値でマルチ
縦モード発振できる、光データ伝送分野に最適な垂直共
振器型面発光レーザ素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical cavity surface emitting laser device, and more particularly, to a vertical cavity surface emitting laser which is capable of multi-longitudinal mode oscillation at a low threshold and is most suitable for the optical data transmission field. It relates to an element.
【０００２】[0002]
【従来の技術】垂直共振器型面発光レーザ素子（以下、
面発光レーザと称す）とマルチモード光ファイバを組み
合わせた光データ伝送技術、いわゆる光インターコネク
ション技術が、近年注目されている。光インターコネク
ション技術によれば、数１００ｍに達する伝送距離を１
Ｇｂ／ｓ程度のビットレートでデータ伝送を行うことが
できる。光インターコネクション技術では、面発光レー
ザをマルチ横モード発振させて使用することにより、モ
ーダル雑音を低減できることが、エレクトロニクス・レ
ターズ（Electronics Letters）、２９巻（１９９３
年）、１４８２ページに示されている。2. Description of the Related Art A vertical cavity surface emitting laser device (hereinafter, referred to as a vertical cavity surface emitting laser device)
In recent years, an optical data transmission technology in which a surface emitting laser is combined with a multimode optical fiber, that is, an optical interconnection technology, has attracted attention. According to the optical interconnection technology, the transmission distance reaching several hundred meters is one.
Data transmission can be performed at a bit rate of about Gb / s. In optical interconnection technology, it has been reported that modal noise can be reduced by using a surface emitting laser by oscillating in multiple transverse modes, see Electronics Letters, Vol. 29, 1993 (1993).
Year), p. 1482.
【０００３】図４を参照して、従来のＧa Ａs 系面発光
レーザの代表的な構成例を説明する。図４は従来の面発
光レーザ１０の層構造を示す基板断面図である。従来の
面発光レーザ１０は、図４に示すように、厚さ約１００
μｍ程度のＧaＡs 基板１２上に、順次、形成されたｎ
−ＧａＡｓバッファ層１４、下部半導体多層膜反射鏡１
６、発光層構造１８、及び、上部半導体多層膜反射鏡２
０を備え、更に、上面に表面側電極２２、及び裏面に裏
面側電極２４を備えている。Referring to FIG. 4, a typical configuration example of a conventional GaAs surface emitting laser will be described. FIG. 4 is a sectional view of a substrate showing a layer structure of the conventional surface emitting laser 10. As shown in FIG. The conventional surface emitting laser 10 has a thickness of about 100, as shown in FIG.
n formed sequentially on a GaAs substrate 12 of about μm.
-GaAs buffer layer 14, lower semiconductor multilayer mirror 1
6, light emitting layer structure 18, and upper semiconductor multilayer mirror 2
0, and a front surface electrode 22 on the top surface and a back surface electrode 24 on the back surface.
【０００４】下部半導体多層膜反射鏡１６は３０ペアの
ｎ−ＡｌＧａＡｓ層/ ＧａＡｓ層の対から構成され、発
光層構造１８はｎ−ＡｌＧａＡｓクラッド層２６、発光
層としてノンドープＧａＡｓ/ ＩｎＧａＡｓ歪量子井戸
構造２８及びｐ−ＡｌＧａＡｓクラッド層３０とから構
成され、上部半導体多層膜反射鏡２０は２０ペアのｐ−
ＡｌＧａＡｓ層/ ＧａＡｓ層の対から構成されている。
但し、上部半導体多層膜反射鏡２０のうち最もｐ−Ａｌ
ＧａＡｓクラッド層に近いＡｌＧａＡｓ層はＡｌＡｓ層
となっている。The lower semiconductor multilayer mirror 16 is composed of 30 pairs of n-AlGaAs / GaAs layers, the light-emitting layer structure 18 is an n-AlGaAs cladding layer 26, and the light-emitting layer is a non-doped GaAs / InGaAs strained quantum well structure. 28 and a p-AlGaAs cladding layer 30. The upper semiconductor multilayer film reflecting mirror 20 has 20 pairs of p-type layers.
It is composed of an AlGaAs layer / GaAs layer pair.
However, the most p-Al
The AlGaAs layer near the GaAs cladding layer is an AlAs layer.
【０００５】上部半導体多層膜反射鏡２０、発光層構造
１８及び下部半導体多層膜反射鏡１８の一部上層は、円
筒状溝３２により円柱状のメサ型に形成されている。上
部半導体多層膜反射鏡２０の上面には、ＳｉＮX などの
誘電体膜がパッシベーション膜３４として成膜されてい
る。また、メサの上部半導体多層膜反射鏡２０中のＡｌ
Ａｓ層の露出端部３６は酸化され、電流ブロッキング構
造を構成している。この結果、酸化されずに上部半導体
多層膜反射鏡２０に残っている電流注入可能な領域は直
径約１０μｍの円形領域である。メサの上部半導体多層
膜反射鏡２０の上面中央の直径１５μｍ程度の光出射窓
３８を除く基板全面には、ポリイミド膜が成膜され円筒
状溝３２を埋め込んでいる。また、光出射窓３４を除く
基板上面には表面側電極（ｐ側電極）２２が形成されて
いる。The upper layer of the upper semiconductor multilayer reflector 20, the light emitting layer structure 18, and the lower semiconductor multilayer reflector 18 is formed in a cylindrical mesa shape by a cylindrical groove 32. On the upper surface of the upper semiconductor multilayer film reflecting mirror 20, a dielectric film such as SiN x is formed as a passivation film. Also, the Al in the upper semiconductor multilayer film reflecting mirror 20 of the mesa
The exposed end 36 of the As layer is oxidized to form a current blocking structure. As a result, the current injectable region remaining in the upper semiconductor multilayer film reflecting mirror 20 without being oxidized is a circular region having a diameter of about 10 μm. A polyimide film is formed on the entire surface of the substrate except for the light exit window 38 having a diameter of about 15 μm at the center of the upper surface of the upper semiconductor multilayer film reflecting mirror 20 of the mesa, and the cylindrical groove 32 is buried. A surface-side electrode (p-side electrode) 22 is formed on the upper surface of the substrate except for the light exit window 34.
【０００６】[0006]
【発明が解決しようとする課題】ところで、面発光レー
ザをマルチ横モードで発振させるためには、発光領域の
直径を１０μｍ程度以上にする必要がある。一方、面発
光レーザが発振するのに必要なしきい値電流の大きさ
は、発光領域の面積に比例するので、発光領域の直径を
１０μｍ程度以上にする必要がある以上、マルチ横モー
ドで発振する面発光レーザのしきい値電流の低減化には
限界がある。例えば、単一横モードで発振する面発光レ
ーザでは、０．５ｍＡ以下のしきい値電流で発振する面
発光レーザが実現されているにもかかわらず、マルチ横
モード発振する面発光レーザのしきい値電流は、一般
に、１ｍＡ以上である。この結果、レーザ駆動に必要な
消費電力が大きくなるという問題がある上に、変調時の
消費電力を低減するのに必要なゼロバイアス変調を行う
場合に、発振遅延時間が長くなる結果、データ伝送の一
層の高速化を図ることが難しいという問題があった。By the way, in order to oscillate the surface emitting laser in the multi-transverse mode, it is necessary to make the diameter of the light emitting region about 10 μm or more. On the other hand, since the magnitude of the threshold current required for the surface emitting laser to oscillate is proportional to the area of the light emitting region, the oscillation in the multi-transverse mode is necessary since the diameter of the light emitting region needs to be about 10 μm or more. There is a limit in reducing the threshold current of a surface emitting laser. For example, in the case of a surface emitting laser that oscillates in a single transverse mode, a surface emitting laser that oscillates with a threshold current of 0.5 mA or less has been realized, but the threshold of a surface emitting laser that oscillates in a multi transverse mode. The value current is generally greater than or equal to 1 mA. As a result, in addition to the problem that the power consumption required for driving the laser increases, the oscillation delay time increases when performing zero-bias modulation required to reduce the power consumption during modulation. There is a problem that it is difficult to further increase the speed.
【０００７】以上のように、従来の面発光レーザの構成
では、低しきい値でマルチ縦モード発振させることが難
しかった。そこで、本発明の目的は、低しきい値でマル
チ縦モード発振できる面発光レーザを提供することであ
る。As described above, in the configuration of the conventional surface emitting laser, it was difficult to oscillate in multiple longitudinal modes at a low threshold. Therefore, an object of the present invention is to provide a surface emitting laser that can oscillate in multiple longitudinal modes at a low threshold.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る垂直共振器型面発光レーザ素子は、半
導体基板上に形成された一対のレーザ反射鏡と、１対の
反射鏡の間に設けられた発光層とを有する垂直共振器型
面発光レーザ素子において、半導体基板が発振波長に対
して透明であり、かつ光出射窓に対向する半導体基板裏
面の位置に第３の反射鏡を備えていることを特徴として
いる。In order to achieve the above object, a vertical cavity surface emitting laser device according to the present invention comprises a pair of laser reflectors formed on a semiconductor substrate and a pair of reflectors. A vertical cavity surface emitting laser device having a light-emitting layer provided between the semiconductor substrate and the semiconductor substrate, the semiconductor substrate being transparent to the oscillation wavelength, and a third reflective surface located at a position on the back surface of the semiconductor substrate facing the light exit window. It is characterized by having a mirror.
【０００９】本発明では、発光層から出射され、下部半
導体多層膜反射鏡を透過した光を第３の反射鏡で反射し
て、光出射窓から出射させることにより、マルチ縦モー
ド発振でも、しきい値を低くすることができる。従っ
て、第３の反射鏡の構成は、発光層からの光を反射する
ことができる限り制約はなく、例えば第３の反射鏡がＳ
ｉ膜／ＳｉＯ2 膜の多層膜で構成されている。この他に
も、Ｓｉ膜／Ａｌ2 Ｏ3 膜、Ｓｉ膜／ＭｇＯ膜、ＴｉＯ
2 膜／ＳｉＯ2 膜等がある。According to the present invention, the light emitted from the light emitting layer and transmitted through the lower semiconductor multilayer film reflecting mirror is reflected by the third reflecting mirror and emitted from the light emitting window, so that the multi-longitudinal mode oscillation can be performed. The threshold can be lowered. Therefore, the configuration of the third reflecting mirror is not limited as long as the light from the light emitting layer can be reflected.
It is composed of a multilayer film of an i-film / SiO 2 film. In addition, Si film / Al 2 O 3 film, Si film / MgO film, TiO
2 film / SiO 2 film.
【００１０】[0010]
【発明の実施の形態】以下に、実施形態例を挙げ、添付
図面を参照して、本発明の実施の形態を具体的かつ詳細
に説明する。実施形態例 本実施形態例は、本発明に係る垂直共振器型面発光レー
ザ素子（以下、簡単に面発光レーザと言う）の実施形態
の一例であって、図１は本実施形態例の面発光レーザの
層構造を示す断面図である。図１に示すもののうち図４
と同じものには同じ符号を付している。本実施形態例の
面発光レーザ４０は、図１に示すように、厚さ約１００
μｍ程度のＧa Ａs 基板１２上に、順次、形成された膜
厚０．５μｍのｎ−ＧａＡｓバッファ層１４、下部半導
体多層膜反射鏡４４、発光層構造１８、及び上部半導体
多層膜反射鏡２０を備え、更に、上面に表面側電極２
２、及び裏面に裏面側電極２４と裏面多層膜反射鏡４２
を備えている。下部半導体多層膜反射鏡４４は５ペアの
ｎ−Ａｌ0.9 Ｇａ0.1 Ａｓ層/ ＧａＡｓ層の対から構成
され、発光層構造１８はｎ−Ａｌ0.3 Ｇａ0.7 Ａｓクラ
ッド層２６、発光層としてノンドープＧａＡｓ/ Ｉｎ
0.2 Ｇａ0.8 Ａｓ歪量子井戸構造２８及びｐ−Ａｌ0.3
Ｇａ0.7 Ａｓクラッド層３０とから構成され、上部半導
体多層膜反射鏡２０は２０ペアのｐ−Ａｌ0.9 Ｇａ0.1
Ａｓ層/ ＧａＡｓ層の対で構成されている。但し、上部
半導体多層膜反射鏡２０のうち最もｐ−ＡｌＧａＡｓク
ラッド層に近いＡｌＧａＡｓ層はＡｌＡｓ層となってい
る。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Embodiment Example This embodiment is an example of an embodiment of a vertical cavity surface emitting laser device (hereinafter, simply referred to as a surface emitting laser) according to the present invention, and FIG. It is sectional drawing which shows the layer structure of a light emitting laser. 4 shown in FIG.
The same reference numerals are given to the same components. As shown in FIG. 1, the surface emitting laser 40 of this embodiment has a thickness of about 100 mm.
A 0.5 μm-thick n-GaAs buffer layer 14, a lower semiconductor multilayer reflector 44, a light emitting layer structure 18, and an upper semiconductor multilayer reflector 20 are sequentially formed on a GaAs substrate 12 of about μm thickness. And a surface-side electrode 2 on the upper surface.
2, and the back surface side electrode 24 and the back surface multilayer film reflection mirror 42 on the back surface
It has. Lower semiconductor multilayer reflection mirror 44 is composed of a pair of n-Al 0.9 Ga 0.1 As layer / GaAs layer of 5 pairs, the light emitting layer structure 18 n-Al 0.3 Ga 0.7 As cladding layer 26, an undoped GaAs as a light emitting layer / In
0.2 Ga 0.8 As strained quantum well structure 28 and p-Al 0.3
Ga 0.7 As consists cladding layer 30., p-Al 0.9 Ga 0.1 of the upper semiconductor multilayer reflection mirror 20 is 20 pairs
It is composed of a pair of As layer / GaAs layer. However, the AlGaAs layer closest to the p-AlGaAs clad layer in the upper semiconductor multilayer mirror 20 is an AlAs layer.
【００１１】上部半導体多層膜反射鏡２０、発光層構造
１８及び下部半導体多層膜反射鏡１８の一部上層は、円
筒状溝３２により円柱状のメサ型に形成されている。上
部半導体多層膜反射鏡２０の上面には、ＳｉＮX などの
誘電体膜がパッシベーション膜３４として成膜されてい
る。また、メサの上部半導体多層膜反射鏡２０中のＡｌ
Ａｓ層の露出端部３６は酸化され、電流ブロッキング構
造を構成している。この結果、酸化されずに上部半導体
多層膜反射鏡２０に残っている電流注入可能な領域は直
径約３μｍの円形領域である。メサの上部半導体多層膜
反射鏡２０の上面中央の直径１５μｍ程度の光出射窓３
８を除く基板全面には、ポリイミド膜が成膜され円筒状
溝３２を埋め込んでいる。また、光出射窓３４を除く基
板上面には表面側電極（ｐ側電極）２２が形成されてい
る。Ｇa Ａs 基板１２の裏面には、光出射窓３８と対向
する位置に３ペアのＳｉ膜／ＳｉＯ2 膜の対からなる裏
面多層膜反射鏡４２を備えている。裏面多層膜反射鏡４
２の領域を除くＧa Ａs 基板１２の裏面には裏面側電極
２４が設けてある。裏面多層膜反射鏡４２を構成するＳ
ｉ膜及びＳｉＯ2 膜の厚さは、それぞれ、約８０ｎｍ、
及び約１７０ｎｍである。Partially upper layers of the upper semiconductor multilayer reflector 20, the light emitting layer structure 18, and the lower semiconductor multilayer reflector 18 are formed in a cylindrical mesa shape by a cylindrical groove 32. On the upper surface of the upper semiconductor multilayer film reflecting mirror 20, a dielectric film such as SiN x is formed as a passivation film. Also, the Al in the upper semiconductor multilayer film reflecting mirror 20 of the mesa
The exposed end 36 of the As layer is oxidized to form a current blocking structure. As a result, the current injectable region remaining in the upper semiconductor multilayer film reflecting mirror 20 without being oxidized is a circular region having a diameter of about 3 μm. A light exit window 3 having a diameter of about 15 μm at the center of the upper surface of the upper semiconductor multilayer reflector 20 of the mesa.
A polyimide film is formed on the entire surface of the substrate except for the surface 8, and the cylindrical groove 32 is buried. A surface-side electrode (p-side electrode) 22 is formed on the upper surface of the substrate except for the light exit window 34. On the back surface of the GaAs substrate 12, a back surface multilayer film reflecting mirror 42 composed of three pairs of Si film / SiO 2 film is provided at a position facing the light exit window 38. Back multilayer mirror 4
A backside electrode 24 is provided on the backside of the GaAs substrate 12 excluding the region 2. S constituting the back multilayer reflection mirror 42
The thickness of the i film and the SiO 2 film is about 80 nm, respectively.
And about 170 nm.
【００１２】以下に、図１を参照しつつ、本実施形態例
の面発光レーザ４０の作製方法を説明する。先ず、ｎ−
ＧａＡｓ基板１２上に、順次、分子線エピタキシー法に
よって、膜厚０．５μｍのｎ−ＧａＡｓバッファ層、下
部半導体多層膜反射鏡１６を構成する１０ペアのｎ−Ａ
ｌ0.9 Ｇａ0.1 Ａｓ層/ ＧａＡｓ層の対からなる多層膜
を成長させる。次いで、下部半導体多層膜反射鏡１６上
に、同じく分子線エピタキシー法によって、ｎ−Ａｌ
0.3 Ｇａ0.7 Ａｓクラッド層２６、ノンドープＧａＡｓ
/ Ｉｎ0. 2 Ｇａ0.8 Ａｓ歪量子井戸構造２８、及びｐ−
Ａｌ0.3 Ｇａ0.7 Ａｓクラッド層３０を成長させる。次
に、クラッド層３０上に、上部半導体多層膜反射鏡２０
を構成する２４ペアのｐ−Ａｌ0.9 Ｇａ0.1 Ａｓ層/ Ｇ
ａＡｓ層の対からなる多層膜を成長させる。但し、最も
ｐ−Ａｌ0.3 Ｇａ0.7 Ａｓクラッド層３０に近いＡｌ
0.9 Ｇａ0.1 Ａｓ層では、これにに代えて、ＡｌＡｓ層
を成長させる。Hereinafter, a method for fabricating the surface emitting laser 40 of this embodiment will be described with reference to FIG. First, n-
An n-GaAs buffer layer having a thickness of 0.5 μm and 10 pairs of nA constituting a lower semiconductor multilayer mirror 16 are sequentially formed on the GaAs substrate 12 by molecular beam epitaxy.
A multilayer film composed of a pair of l 0.9 Ga 0.1 As layer / GaAs layer is grown. Next, on the lower semiconductor multilayer film reflecting mirror 16, n-Al
0.3 Ga 0.7 As clad layer 26, undoped GaAs
/ In 0. 2 Ga 0.8 As strained quantum well structure 28, and p-
An Al 0.3 Ga 0.7 As clad layer 30 is grown. Next, the upper semiconductor multilayer mirror 20 is placed on the cladding layer 30.
24 pairs of p-Al 0.9 Ga 0.1 As layers / G
A multilayer film consisting of a pair of aAs layers is grown. However, the Al closest to the p-Al 0.3 Ga 0.7 As clad layer 30
For the 0.9 Ga 0.1 As layer, an AlAs layer is grown instead.
【００１３】上部半導体多層膜反射鏡２０を形成した基
板上にＳｉＮX などの誘電体膜を推積し、フォトリソグ
ラフィ技術を用いて直径１５μｍの円形パターンを中央
に有するマスクを形成する。これをマスクとして、塩素
系ガスを用いた反応性イオンビームエッチングで下部半
導体多層膜反射鏡１６の上部に達するまで上部半導体多
層膜反射鏡２０、発光層構造１８及び下部半導体多層膜
反射鏡１６をエッチングし、円筒状溝３２に取り囲まれ
たメサに加工する。A dielectric film such as SiN x is deposited on the substrate on which the upper semiconductor multilayer film reflecting mirror 20 is formed, and a mask having a circular pattern having a diameter of 15 μm at the center is formed by photolithography. Using this as a mask, the upper semiconductor multilayer reflector 20, the light-emitting layer structure 18, and the lower semiconductor multilayer reflector 16 are reactive ion beam etching using a chlorine-based gas until they reach the upper portion of the lower semiconductor multilayer reflector 16. Etching is performed to form a mesa surrounded by the cylindrical groove 32.
【００１４】その後、水蒸気雰囲気中４００℃で約１５
分間加熱し、メサ側面の上部半導体多層膜反射鏡２０中
のＡｌＡｓ層露出面を酸化させて、電流ブロッキング構
造を構成する。このとき、酸化されずに上部半導体多層
膜反射鏡２０に残った電流注入可能な領域は、約直径３
μｍである。ＳｉＮX などの誘電体膜であるパッシベー
ション膜３４を成膜し、メサ周辺の円筒状溝３２をポリ
イミドで埋め込んだ後、電流注入、光取り出しのために
メサ最上部のポリイミドを除去し、リフトオフ技術を用
いて、光取り出し窓３８（光出射窓）を有する電極構造
２２を形成する。基板厚さが約１００μｍ程度になるよ
うに、Ｇa Ａs 基板１２の裏面を研磨して、裏面を鏡面
に仕上げる。次いで、裏面に３ペアのＳｉ層／ＳｉＯ2
層の対からなる多層膜からなる裏面多層膜反射鏡４２を
形成する。この後、金属を蒸着して裏面側電極２４を形
成することにより、面発光レーザ４０を完成することが
できる。Thereafter, at 400.degree.
Then, the exposed surface of the AlAs layer in the upper semiconductor multilayer mirror 20 on the side of the mesa is oxidized to form a current blocking structure. At this time, the current injectable region remaining in the upper semiconductor multilayer film reflecting mirror 20 without being oxidized has a diameter of about 3 mm.
μm. After forming a passivation film 34, which is a dielectric film such as SiN X , and filling the cylindrical groove 32 around the mesa with polyimide, the polyimide at the top of the mesa is removed for current injection and light extraction. Is used to form the electrode structure 22 having the light extraction window 38 (light emission window). The rear surface of the GaAs substrate 12 is polished so that the substrate thickness is about 100 μm, and the rear surface is finished to a mirror surface. Next, three pairs of Si layers / SiO 2
A back-surface multilayer film reflecting mirror made of a multilayer film composed of a pair of layers is formed. Thereafter, the surface emitting laser 40 can be completed by depositing a metal to form the back surface side electrode 24.
【００１５】本実施形態例の面発光レーザ４０と同じ構
成の面発光レーザを試作し、電流対光出力特性を測定し
たところ、図２に示す電流対光出力特性の測定結果を得
た。図２から判る通り、しきい値電流は０．３ｍＡであ
って、単一モード発振する発光面積の小さい面発光レー
ザと同程度の値が得られた。また、試作した面発光レー
ザの発振スペクトルは、図３に示す通りである。発振波
長は９８０ｎｍであるが、中心ピーク波長の近傍に約
１．５ｎｍ間隔で５本のサブピークが見える。この波長
間隔は、基板の厚さから予想される縦モード間隔に一致
しており、試作した面発光レーザが、マルチ縦モードで
発振していることが確認できた。A surface-emitting laser having the same configuration as the surface-emitting laser 40 of this embodiment was prototyped, and the current-to-light output characteristics were measured. As a result, the measurement results of the current-to-light output characteristics shown in FIG. 2 were obtained. As can be seen from FIG. 2, the threshold current was 0.3 mA, and the same value as that of the surface emitting laser having a small light emitting area for single mode oscillation was obtained. The oscillation spectrum of the prototype surface emitting laser is as shown in FIG. Although the oscillation wavelength is 980 nm, five subpeaks can be seen near the center peak wavelength at an interval of about 1.5 nm. This wavelength interval matched the longitudinal mode interval expected from the thickness of the substrate, and it was confirmed that the prototype surface emitting laser oscillated in the multi-longitudinal mode.
【００１６】本発明に係る面発光レーザの特徴は、基板
裏面に形成した反射鏡の効果によりマルチ縦モード発振
が低しきい値で可能になることである。従って、発振波
長において基板が透明であるような構成の面発光レーザ
であれば、本実施形態例と同様の効果が得られる。例え
ば、波長１．３μｍや１．５５μｍで発振するＩｎＰ基
板上の面発光レーザや、ＧａＰ基板上に形成した波長８
５０ｎｍ程度のＧａＡｓ系面発光レーザなどに、本発明
を適用でき、本実施形態例と同様の効果が奏することが
できる。A feature of the surface emitting laser according to the present invention is that the multi-longitudinal mode oscillation can be performed at a low threshold value by the effect of the reflecting mirror formed on the back surface of the substrate. Therefore, if the surface emitting laser has a configuration in which the substrate is transparent at the oscillation wavelength, the same effect as that of the embodiment can be obtained. For example, a surface emitting laser on an InP substrate that oscillates at a wavelength of 1.3 μm or 1.55 μm, or a wavelength of 8 μm formed on a GaP substrate.
The present invention can be applied to a GaAs surface emitting laser of about 50 nm or the like, and the same effects as in the present embodiment can be obtained.
【００１７】[0017]
【発明の効果】本発明によれば、半導体基板上に形成さ
れた一対のレーザ反射鏡と、１対の反射鏡の間に設けら
れた発光層とを有する垂直共振器型面発光レーザ素子に
おいて、半導体基板が発振波長に対して透明であり、か
つ光出射窓に対向する半導体基板裏面の位置に第３の反
射鏡を備えることにより、０．５ｍＡ以下の低しきい値
でマルチ縦モード発振する垂直共振器型面発光レーザ素
子を実現することができる。本発明に係る垂直共振器型
面発光レーザ素子を使用することにより、高速な光イン
ターコネクションを低消費電力で実現することができ
る。According to the present invention, there is provided a vertical cavity surface emitting laser device having a pair of laser reflectors formed on a semiconductor substrate and a light emitting layer provided between the pair of reflectors. By providing the third reflecting mirror at a position on the back surface of the semiconductor substrate opposite to the light exit window, the multi-longitudinal mode oscillation with a low threshold of 0.5 mA or less is provided. Vertical cavity surface emitting laser device can be realized. By using the vertical cavity surface emitting laser device according to the present invention, high-speed optical interconnection can be realized with low power consumption.
【図１】面発光レーザの実施形態例の層構造を示す基板
断面図である。FIG. 1 is a sectional view of a substrate showing a layer structure of an embodiment of a surface emitting laser.
【図２】実施形態例の面発光レーザの電流対光出力特性
を示すグラフである。FIG. 2 is a graph showing current versus light output characteristics of the surface emitting laser according to the embodiment.
【図３】実施形態例の面発光レーザの発振スペクトルを
示すグラフである。FIG. 3 is a graph showing an oscillation spectrum of the surface emitting laser according to the embodiment.
【図４】従来の面発光レーザの層構造を示す基板断面図
である。FIG. 4 is a sectional view of a substrate showing a layer structure of a conventional surface emitting laser.
１０ 従来の面発光レーザ １２ Ｇa Ａs 基板 １４ ｎ−ＧａＡｓバッファ層 １６ ３０ペアのｎ−ＡｌＧａＡｓ層/ ＧａＡｓ層から
なる下部半導体多層膜反射鏡 １８ 発光層構造 ２０ ２０ペアのｐ−ＡｌＧａＡｓ層/ ＧａＡｓ層から
なる上部半導体多層膜反射鏡 ２２ 表面側電極 ２４ 裏面側電極 ２６ ｎ−ＡｌＧａＡｓクラッド層 ２８ ノンドープＧａＡｓ/ ＩｎＧａＡｓ歪量子井戸構
造 ３０ ｐ−ＡｌＧａＡｓクラッド層 ３２ 円筒状溝 ３４ パッシベーション膜 ３６ ＡｌＡｓ層の酸化層 ３８ 光出射窓 ４０ 実施形態例の面発光レーザ ４２ ３ペアのＳｉ膜／ＳｉＯ2 膜からなる裏面多層膜
反射鏡 ４４ ５ペアのｎ−ＡｌＧａＡｓ層/ ＧａＡｓ層からな
る下部半導体多層膜反射鏡DESCRIPTION OF SYMBOLS 10 Conventional surface emitting laser 12 GaAs substrate 14 n-GaAs buffer layer 16 Lower semiconductor multilayer film reflector consisting of 30 pairs of n-AlGaAs layers / GaAs layers 18 Light emitting layer structure 20 20 pairs of p-AlGaAs layers / GaAs layers Upper semiconductor multilayer film reflecting mirror 22 front electrode 24 back electrode 26 n-AlGaAs clad layer 28 undoped GaAs / InGaAs strained quantum well structure 30 p-AlGaAs clad layer 32 cylindrical groove 34 passivation film 36 oxide layer of AlAs layer 38 light exit window 40 embodiment of the surface emitting laser 42 three pairs of Si film / back multilayer film reflecting mirror made of SiO 2 film 44 5 pairs lower semiconductor multilayer reflection mirror made of n-AlGaAs layer / GaAs layer
Claims (2)
反射鏡と、１対の反射鏡の間に設けられた発光層とを有
する垂直共振器型面発光レーザ素子において、 半導体基板が発振波長に対して透明であり、かつ光出射
窓に対向する半導体基板裏面の位置に第３の反射鏡を備
えていることを特徴とする垂直共振器型面発光レーザ素
子。1. A vertical cavity surface emitting laser device having a pair of laser reflectors formed on a semiconductor substrate and a light emitting layer provided between the pair of reflectors, wherein the semiconductor substrate has an oscillation wavelength. A vertical cavity surface emitting laser device characterized by comprising a third reflecting mirror at a position on the back surface of the semiconductor substrate facing the light exit window.
の多層膜で構成されていることを特徴とする請求項１に
記載の垂直共振器型面発光レーザ素子。2. The vertical cavity surface emitting laser device according to claim 1, wherein the third reflecting mirror is constituted by a multilayer film of a Si film / SiO 2 film pair.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10239946A JP2000068604A (en) | 1998-08-26 | 1998-08-26 | Vertical resonator type surface emitting laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10239946A JP2000068604A (en) | 1998-08-26 | 1998-08-26 | Vertical resonator type surface emitting laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000068604A true JP2000068604A (en) | 2000-03-03 |
Family
ID=17052184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10239946A Pending JP2000068604A (en) | 1998-08-26 | 1998-08-26 | Vertical resonator type surface emitting laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000068604A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173627A (en) * | 2004-12-15 | 2006-06-29 | Truelight Corp | Oxide confined type vertical cavity surface emitting semiconductor laser with two stacks |
| CN1302588C (en) * | 2002-04-15 | 2007-02-28 | 夏普公司 | Semiconductor laser and mfg. method thereof |
| US7418020B2 (en) | 2005-10-31 | 2008-08-26 | The Furukawa Electric Co., Ltd. | Surface emitting laser device |
| JP2011232569A (en) * | 2010-04-28 | 2011-11-17 | Seiko Epson Corp | Optical article and manufacturing method of the same |
| US8178364B2 (en) | 2005-10-31 | 2012-05-15 | Furukawa Electric Co., Ltd. | Testing method of surface-emitting laser device and testing device thereof |
-
1998
- 1998-08-26 JP JP10239946A patent/JP2000068604A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302588C (en) * | 2002-04-15 | 2007-02-28 | 夏普公司 | Semiconductor laser and mfg. method thereof |
| JP2006173627A (en) * | 2004-12-15 | 2006-06-29 | Truelight Corp | Oxide confined type vertical cavity surface emitting semiconductor laser with two stacks |
| US7418020B2 (en) | 2005-10-31 | 2008-08-26 | The Furukawa Electric Co., Ltd. | Surface emitting laser device |
| US8178364B2 (en) | 2005-10-31 | 2012-05-15 | Furukawa Electric Co., Ltd. | Testing method of surface-emitting laser device and testing device thereof |
| JP2011232569A (en) * | 2010-04-28 | 2011-11-17 | Seiko Epson Corp | Optical article and manufacturing method of the same |
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