CN208044346U - It is used to prepare the supply unit of graphene - Google Patents
It is used to prepare the supply unit of graphene Download PDFInfo
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- CN208044346U CN208044346U CN201820246177.3U CN201820246177U CN208044346U CN 208044346 U CN208044346 U CN 208044346U CN 201820246177 U CN201820246177 U CN 201820246177U CN 208044346 U CN208044346 U CN 208044346U
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims description 146
- 101001128814 Pandinus imperator Pandinin-1 Proteins 0.000 claims description 33
- 101001024685 Pandinus imperator Pandinin-2 Proteins 0.000 claims description 29
- 230000005611 electricity Effects 0.000 claims description 9
- 230000002146 bilateral effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 101150016367 RIN1 gene Proteins 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The utility model discloses a kind of supply unit being used to prepare graphene, including the first power supply, second source, input switching circuit, output switch circuit, first switch control circuit, second switch control circuit and microcontroller；First power supply and second source are electrically connected with input switching circuit input terminal, input switching circuit output end is electrically connected with output switch circuit input terminal, output switch circuit includes output terminals A and output end B, first switch control circuit and second switch control circuit are electrically connected with input switching circuit control terminal, first switch control circuit and second switch control circuit with monolithic mechatronics.The utility model has the characteristics that simple in structure, cost-effective and can improve graphene yield.
Description
Technical field
The utility model is related to technical field of graphene preparation, more particularly to one kind is simple in structure, cost-effective and can carry
The supply unit for being used to prepare graphene of high yield.
Background technology
Graphene is a kind of atom graphite, due to its two-dimensional structure and unique physical property, such as high inherent electronics
Mobility, excellent mechanical strength, flexible elastic and good electric conductivity, has caused extensive concern.
Existing graphene preparation method includes mechanical stripping method, epitaxial growth method, vapour deposition process and oxidation-reduction method etc..
Though graphene prepared by mechanical stripping method and epitaxial growth method has a high-quality, low output, manufacturing cost is too high；It uses in the recent period
The research of the chemical vapour deposition technique of catalytic metal substrate obtains remarkable progress, to show that large-area graphene can be such that capacity increases
Add, expands its application on highly transparent and flexible conductive film, but equally prepare expensive；Pass through chemistry or heat
The oxidation chemistry stripping means of reduction prepares graphene, though since the advantages of potential low cost and liquid phase processing and manufacturing has caused
Everybody pays close attention to, however, graphene honeycomb crystal lattice structure in oxidation process is seriously destroyed, obtained film resistance resistance value is too
Height is far above the requirement of ITO.In order to overcome above-mentioned technological deficiency, it is desirable to provide it is a kind of can industrialization low cost graphene
Preparation facilities.
Utility model content
The utility model is to overcome in the prior art, and existing graphene preparation facilities is complicated, cost of manufacture
Height, and the problem of low output, provide a kind of electricity simple in structure, cost-effective and that yield can be improved being used to prepare graphene
Source device.
To achieve the above object, the utility model uses following technical scheme：
A kind of supply unit being used to prepare graphene, including the first power supply, second source, input switching circuit, output
Switching circuit, first switch control circuit, second switch control circuit and microcontroller；First power supply and second source with input
Switching circuit input terminal is electrically connected, and input switching circuit output end is electrically connected with output switch circuit input terminal, output switch electricity
Road includes output terminals A and output end B, and first switch control circuit and second switch control circuit are controlled with input switching circuit
End electrical connection, first switch control circuit and second switch control circuit with monolithic mechatronics.
The utility model can output amplitude and the adjustable square wave of duty ratio, alleviate the oxidization condition of graphene stripping, it is right
There is positive meaning in graphene large-scale production.The utility model has simple in structure, cost-effective and can improve graphite
The characteristics of alkene yield.
Preferably, input switching circuit includes metal-oxide-semiconductor Min1 and metal-oxide-semiconductor Min2, the source electrode of metal-oxide-semiconductor Min1 and the first electricity
Source is electrically connected, and the grid of metal-oxide-semiconductor Min1 is electrically connected with first switch control circuit, source electrode and the second source electricity of metal-oxide-semiconductor Min2
Connection, the grid of metal-oxide-semiconductor Min2 is electrically connected with first switch control circuit, the input terminal of output switch circuit respectively with metal-oxide-semiconductor
The drain electrode of Min1 is electrically connected with the drain electrode of metal-oxide-semiconductor Min2.First switch control circuit controls metal-oxide-semiconductor Min1's or metal-oxide-semiconductor Min2
Break-make so that respectively with metal-oxide-semiconductor Min1 or metal-oxide-semiconductor Min2 the first power circuit connecting or second source circuit turn-on.Metal-oxide-semiconductor
Min1 and metal-oxide-semiconductor Min2 is P-channel metal-oxide-semiconductor.
Preferably, output switch circuit includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4, input switch electricity
The output end on road is electrically connected with the source electrode of the source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M3 respectively, the leakage of the drain electrode and metal-oxide-semiconductor M2 of metal-oxide-semiconductor M1
Pole is electrically connected, and the source electrode ground connection of metal-oxide-semiconductor M2, the drain electrode of metal-oxide-semiconductor M3 is electrically connected with the drain electrode of metal-oxide-semiconductor M4, and the source electrode of metal-oxide-semiconductor M4 connects
Ground, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 grid be electrically connected with second switch control circuit.Second switch
Control circuit controls the break-make of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 so that shape between output terminals A and output end B
At positive voltage or negative voltage.Metal-oxide-semiconductor M1 and metal-oxide-semiconductor M3 is P-channel metal-oxide-semiconductor, and metal-oxide-semiconductor M2 and metal-oxide-semiconductor M4 are N-channel MOS
Pipe.
Preferably, first switch control circuit includes binary channels optocoupler Pin1 and binary channels optocoupler Pin2, binary channels light
1,2 feet of coupling Pin1 and 1,2 feet of binary channels optocoupler Pin2 with monolithic mechatronics, 4 feet of binary channels optocoupler Pin1 and
4 feet of binary channels optocoupler Pin2 by being grounded after connecting resistance, 5 feet of binary channels optocoupler Pin1 and binary channels optocoupler Pin2's
5 feet are grounded respectively, and 6 feet of binary channels optocoupler Pin1 are electrically connected with 7 feet of binary channels optocoupler Pin1, and the 6 of binary channels optocoupler Pin2
Foot is electrically connected with 7 feet of binary channels optocoupler Pin2,8 feet of binary channels optocoupler Pin1 respectively with the grid and bilateral of metal-oxide-semiconductor Min1
3 feet of road optocoupler Pin2 are electrically connected, and connection resistance is equipped between 8 feet and the source electrode of metal-oxide-semiconductor Min1 of binary channels optocoupler Pin1, double
8 feet of channel optocoupler Pin2 are electrically connected with 3 feet of the grid of metal-oxide-semiconductor Min2 and binary channels optocoupler Pin1 respectively, and are connected to
3 feet of binary channels optocoupler Pin1 are equipped with connection resistance between 8 feet and the source electrode of metal-oxide-semiconductor Min2 of binary channels optocoupler Pin2, double
1,2 feet of channel optocoupler Pin1 and 1,2 feet of binary channels optocoupler Pin2 with monolithic mechatronics.Microcontroller passes through to bilateral
The signal of 1 and 2 feet of road optocoupler Pin1 or binary channels optocoupler Pin2 controls so that conducting metal-oxide-semiconductor Min1, shutdown metal-oxide-semiconductor Min2,
Or conducting metal-oxide-semiconductor Min2, shutdown metal-oxide-semiconductor Min1, realize input switching circuit switching.
Preferably, second switch control circuit include binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and
Binary channels optocoupler P4, binary channels optocoupler P1, binary channels optocoupler P2,1 foot of binary channels optocoupler P3 and binary channels optocoupler P4 and 2 feet are equal
With monolithic mechatronics, 3 feet of binary channels optocoupler P1 and 3 feet of binary channels optocoupler P3 are electric with the input terminal of output switch circuit
Connection, 3 feet of binary channels optocoupler P2 are electrically connected with 8 feet of binary channels optocoupler P1,3 feet and the binary channels optocoupler of binary channels optocoupler P4
8 feet of P3 are electrically connected, binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler P4 4 feet respectively
By being grounded after connecting resistance, 5 feet of binary channels optocoupler P1 and 5 feet of binary channels optocoupler P3 are grounded respectively, binary channels optocoupler P2
5 feet be electrically connected with the grid of metal-oxide-semiconductor M2,5 feet of binary channels optocoupler P4 are electrically connected with the grid of metal-oxide-semiconductor M4, binary channels optocoupler
P1, binary channels optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler P4 6 feet respectively with binary channels optocoupler P1, binary channels optocoupler
7 feet of P2, binary channels optocoupler P3 and binary channels optocoupler are electrically connected, and the grid of 8 feet and metal-oxide-semiconductor M1 of binary channels optocoupler P1 is electrically connected
Connect, 8 feet of binary channels optocoupler P3 are electrically connected with the grid of metal-oxide-semiconductor M3, the input terminal of output switch circuit respectively with binary channels light
The electrical connection of 8 feet of 8 feet of coupling P2 and binary channels optocoupler P4,5 feet of binary channels optocoupler P2 by forward direction connect after diode D1 with
4 feet of binary channels optocoupler P1 are electrically connected, 5 feet of binary channels optocoupler P4 by forward direction connect after diode D3 with binary channels optocoupler P3
4 feet electrical connection, between 8 feet and the source electrode of metal-oxide-semiconductor M1 of binary channels optocoupler P1 be equipped with connection resistance, in binary channels optocoupler P3
8 feet and the source electrode of metal-oxide-semiconductor M3 between be equipped with connection resistance.Microcontroller passes through to binary channels optocoupler P1, binary channels optocoupler P2, double
The signals of 1 and 2 feet of channel optocoupler P3 and binary channels optocoupler P4 controls, then control binary channels optocoupler P1, binary channels optocoupler P2,
The break-make of binary channels optocoupler P3 and binary channels optocoupler P4 so that positive voltage or negative voltage are formed between output terminals A and output end B.
Preferably, the supply unit for being used to prepare graphene further includes warning circuit, warning circuit is electrically connected with microcontroller
It connects.When the supply unit for being used to prepare graphene breaks down, when can not work normally, microcontroller controls warning circuit alarm.
Therefore, the utility model has the advantages that：（1）It is simple in structure, cost-effective and can improve graphene production
Amount；（2）Can output amplitude and the adjustable square wave of duty ratio, alleviate the oxidation of graphene stripping, for graphene scale metaplasia
Production has positive meaning.
Description of the drawings
Fig. 1 is a kind of functional block diagram of the utility model；
Fig. 2 is a kind of circuit diagram of the utility model.
In figure：First power supply 1, second source 2, input switching circuit 3, output switch circuit 4, first switch control circuit
5, second switch control circuit 6, microcontroller 7, warning circuit 8.
Specific implementation mode
The utility model is further described with specific implementation mode below in conjunction with the accompanying drawings：
A kind of supply unit being used to prepare graphene as shown in Figure 1, including the first power supply 1, second source 2, input
Switching circuit 3, output switch circuit 4, first switch control circuit 5, second switch control circuit 6 and microcontroller 7；First power supply
It is electrically connected with input switching circuit input terminal with second source, input switching circuit output end and output switch circuit input terminal
Electrical connection, output switch circuit includes output terminals A and output end B, and first switch control circuit and second switch control circuit are equal
It is electrically connected with input switching circuit control terminal, first switch control circuit and second switch control circuit are electrically connected with microcontroller
It connects.Include eight pins of tetra- pins of PROTD.0-3 and PROTC.0-7 on microcontroller.
As shown in Fig. 2, input switching circuit includes metal-oxide-semiconductor Min1 and metal-oxide-semiconductor Min2, the source electrode of metal-oxide-semiconductor Min1 and first
The grid of power electric connection, metal-oxide-semiconductor Min1 is electrically connected with first switch control circuit, the source electrode and second source of metal-oxide-semiconductor Min2
Electrical connection, the grid of metal-oxide-semiconductor Min2 is electrically connected with first switch control circuit, the input terminal of output switch circuit respectively with MOS
The drain electrode of pipe Min1 is electrically connected with the drain electrode of metal-oxide-semiconductor Min2.First switch control circuit controls metal-oxide-semiconductor Min1 or metal-oxide-semiconductor Min2
Break-make so that respectively with metal-oxide-semiconductor Min1 or metal-oxide-semiconductor Min2 the first power circuit connecting or second source circuit turn-on.MOS
Pipe Min1 and metal-oxide-semiconductor Min2 is P-channel metal-oxide-semiconductor.
Output switch circuit includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4, the output end of input switching circuit
It being electrically connected respectively with the source electrode of the source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M3, the drain electrode of metal-oxide-semiconductor M1 is electrically connected with the drain electrode of metal-oxide-semiconductor M2,
The source electrode of metal-oxide-semiconductor M2 is grounded, and the drain electrode of metal-oxide-semiconductor M3 is electrically connected with the drain electrode of metal-oxide-semiconductor M4, the source electrode ground connection of metal-oxide-semiconductor M4, metal-oxide-semiconductor
M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 grid be electrically connected with second switch control circuit.Second switch control circuit
Control the break-make of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 so that form positive voltage between output terminals A and output end B
Or negative voltage.Metal-oxide-semiconductor M1 and metal-oxide-semiconductor M3 is P-channel metal-oxide-semiconductor, and metal-oxide-semiconductor M2 and metal-oxide-semiconductor M4 are N-channel MOS pipe.
First switch control circuit includes binary channels optocoupler Pin1 and binary channels optocoupler Pin2, binary channels optocoupler Pin1 1,
2 feet are connected respectively on microcontroller PORTD.0 and PORTD.1 foot, and 1,2 feet of binary channels optocoupler Pin2 are connected to microcontroller
On PORTD.2 and PORTD.3 feet, 4 feet of binary channels optocoupler Pin1 after connecting resistance Rin1 by being grounded, binary channels optocoupler Pin2
4 feet by connect resistance Rin2 after be grounded, 5 feet of binary channels optocoupler Pin1 and binary channels optocoupler Pin2 are grounded respectively, bilateral
6 feet of road optocoupler Pin1 are connected with 7 feet, and 6 feet of binary channels optocoupler Pin2 are connected with 7 feet, the 8 feet connection of binary channels optocoupler Pin1
The grid of metal-oxide-semiconductor Min1, and 3 feet of binary channels optocoupler Pin2 are connected to, in 8 feet and metal-oxide-semiconductor of binary channels optocoupler Pin1
It is connected with resistance Rin3, the grid of the 8 feet connection metal-oxide-semiconductor Min2 of binary channels optocoupler Pin2 between the source electrode of Min1, and connects
To 3 feet of binary channels optocoupler Pin1, resistance is connected between 8 feet and the source electrode of metal-oxide-semiconductor Min2 of binary channels optocoupler Pin2
1,2 feet of Rin4, binary channels optocoupler Pin1 and 1,2 feet of binary channels optocoupler Pin2 are respectively connected on microcontroller.Microcontroller
Pass through the signal control to binary channels optocoupler Pin1 or 1 and 2 feet of binary channels optocoupler Pin2 so that conducting metal-oxide-semiconductor Min1, shutdown
Metal-oxide-semiconductor Min2, or conducting metal-oxide-semiconductor Min2, shutdown metal-oxide-semiconductor Min1, realize input switching circuit switching.
In addition, second switch control circuit includes binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and bilateral
1 foot and 2 feet of road optocoupler P4, binary channels optocoupler P1 are all connected on PORTC.0 the and PORTC.1 feet of microcontroller, binary channels light
1 foot and 2 feet of coupling P2 is all connected on PORTC.2 the and PORTC.3 feet of microcontroller, and 1 foot and 2 feet of binary channels optocoupler P3 all connect
It is connected on PORTC.4 the and PORTC.5 feet of microcontroller, 1 foot and 2 feet of binary channels optocoupler P4 are connected respectively to microcontroller
On PORTC.6 and PORTC.7.
3 feet of binary channels optocoupler P1 and 3 feet of binary channels optocoupler P3 are electrically connected with the input terminal of output switch circuit, double
3 feet of channel optocoupler P2 are electrically connected with 8 feet of binary channels optocoupler P1,8 feet of 3 feet and binary channels optocoupler P3 of binary channels optocoupler P4
Electrical connection, for 4 feet of binary channels optocoupler P1 respectively by being grounded after connecting resistance R1,4 feet of binary channels optocoupler P2 pass through company respectively
It is grounded after connecting resistance R2, for 4 feet of binary channels optocoupler P3 respectively by being grounded after connecting resistance R3,4 feet of binary channels optocoupler P4 are logical
It is grounded after crossing connection resistance R4,5 feet of binary channels optocoupler P1 and 5 feet of binary channels optocoupler P3 are grounded respectively, binary channels optocoupler P2
5 feet be electrically connected with the grid of metal-oxide-semiconductor M2,5 feet of binary channels optocoupler P4 are electrically connected with the grid of metal-oxide-semiconductor M4, binary channels optocoupler
P1, binary channels optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler P4 6 feet respectively with binary channels optocoupler P1, binary channels optocoupler
7 feet of P2, binary channels optocoupler P3 and binary channels optocoupler are electrically connected, and the grid of 8 feet and metal-oxide-semiconductor M1 of binary channels optocoupler P1 is electrically connected
Connect, 8 feet of binary channels optocoupler P3 are electrically connected with the grid of metal-oxide-semiconductor M3, the input terminal of output switch circuit respectively with binary channels light
The electrical connection of 8 feet of 8 feet of coupling P2 and binary channels optocoupler P4,5 feet of binary channels optocoupler P2 by forward direction connect after diode D1 with
4 feet of binary channels optocoupler P1 are electrically connected, 5 feet of binary channels optocoupler P4 by forward direction connect after diode D3 with binary channels optocoupler P3
4 feet electrical connection, resistance R5 is connected between 8 feet and the source electrode of metal-oxide-semiconductor M1 of binary channels optocoupler P1, in binary channels optocoupler P3
8 feet and the source electrode of metal-oxide-semiconductor M3 between be connected with resistance R6.Microcontroller passes through to binary channels optocoupler P1, binary channels optocoupler P2, double
The signals of 1 and 2 feet of channel optocoupler P3 and binary channels optocoupler P4 controls, then control binary channels optocoupler P1, binary channels optocoupler P2,
The break-make of binary channels optocoupler P3 and binary channels optocoupler P4 so that positive voltage or negative voltage are formed between output terminals A and output end B.
The utility model further includes warning circuit 8, warning circuit and monolithic mechatronics.When the electricity for being used to prepare graphene
Source device breaks down, and when can not work normally, microcontroller controls warning circuit alarm.
The course of work of the utility model is as follows：
When PORTD.0, PORTC.0, PORTC.6 foot of microcontroller set high 1 minute and PORTD.1, PORTC.1, PORTC.7
When foot drags down 1 minute, metal-oxide-semiconductor Min2, M2, M3 are disconnected, metal-oxide-semiconductor Min1, M1, M4 conducting, UABOutput one 1 minute+
The voltage of 2.5V；
When PORTD.0, PORTC.2, PORTC.4 foot of microcontroller set high 30 seconds and PORTD.1, PORTC.3, PORTC.5
When foot drags down 30 seconds, metal-oxide-semiconductor Min2, M1, M4 are disconnected, metal-oxide-semiconductor Min1, M2, M3 conducting, UABOne 30 seconds -2.5V's of output
Voltage；
When PORTD.2, PORTC.0, PORTC.6 foot of microcontroller set high 5 seconds and PORTD.3, PORTC.1, PORTC.7 foot
When dragging down 5 seconds, metal-oxide-semiconductor Min1, M2, M3 are disconnected, metal-oxide-semiconductor Min2, M1, M4 conducting, UABExport the electricity of 5 seconds+10V
Pressure；
When PORTD.2, PORTC.2, PORTC.4 foot of microcontroller set high 2 seconds and PORTD.3, PORTC.3, PORTC.5 foot
When dragging down 2 seconds, metal-oxide-semiconductor Min2, M1, M4 are disconnected, metal-oxide-semiconductor Min1, M2, M3 conducting, UABExport the electricity of 2 seconds -10V
Pressure.
Realize the controllable ± 2.5V of output time or ± 10V voltages at 2 points on A, B in this way.
It should be understood that the present embodiment is merely to illustrate the utility model rather than limitation the scope of the utility model.In addition
It should be understood that after reading the content taught by the present invention, those skilled in the art can make the utility model various
Change or modification, these equivalent forms also fall within the scope of the appended claims of the present application.
Claims (6)
1. a kind of supply unit being used to prepare graphene, characterized in that including the first power supply（1）, second source（2）, input
Switching circuit（3）, output switch circuit（4）, first switch control circuit（5）, second switch control circuit（6）And microcontroller
（7）；First power supply and second source are electrically connected with input switching circuit input terminal, and input switching circuit output end is opened with output
Circuit input end electrical connection is closed, output switch circuit includes output terminals A and output end B, and first switch control circuit and second open
Control circuit is closed to be electrically connected with input switching circuit control terminal, first switch control circuit and second switch control circuit with
Monolithic mechatronics.
2. the supply unit according to claim 1 for being used to prepare graphene, characterized in that input switching circuit includes
Metal-oxide-semiconductor Min1 and metal-oxide-semiconductor Min2, the source electrode of metal-oxide-semiconductor Min1 and the first power electric connection, the grid of metal-oxide-semiconductor Min1 are opened with first
Control circuit electrical connection is closed, the source electrode of metal-oxide-semiconductor Min2 is electrically connected with second source, grid and the first switch control of metal-oxide-semiconductor Min2
Circuit electrical connection processed, the input terminal of output switch circuit are electrically connected with the drain electrode of metal-oxide-semiconductor Min1 and the drain electrode of metal-oxide-semiconductor Min2 respectively
It connects.
3. the supply unit according to claim 1 for being used to prepare graphene, characterized in that output switch circuit includes
Metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4, the output end of input switching circuit respectively with the source electrode and MOS of metal-oxide-semiconductor M1
The source electrode of pipe M3 is electrically connected, and the drain electrode of metal-oxide-semiconductor M1 is electrically connected with the drain electrode of metal-oxide-semiconductor M2, the source electrode ground connection of metal-oxide-semiconductor M2, metal-oxide-semiconductor M3
Drain electrode be electrically connected with the drain electrode of metal-oxide-semiconductor M4, the source electrode of metal-oxide-semiconductor M4 ground connection, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor
The grid of M4 is electrically connected with second switch control circuit.
4. the supply unit according to claim 2 for being used to prepare graphene, characterized in that first switch control circuit packet
Include binary channels optocoupler Pin1 and binary channels optocoupler Pin2,1,2 feet of binary channels optocoupler Pin1 and 1, the 2 of binary channels optocoupler Pin2
Foot is followed by by connecting resistance with monolithic mechatronics, 4 feet of binary channels optocoupler Pin1 and 4 feet of binary channels optocoupler Pin2
Ground, 5 feet of binary channels optocoupler Pin1 and 5 feet of binary channels optocoupler Pin2 are grounded respectively, 6 feet and bilateral of binary channels optocoupler Pin1
7 feet of road optocoupler Pin1 are electrically connected, and 6 feet of binary channels optocoupler Pin2 are electrically connected with 7 feet of binary channels optocoupler Pin2, binary channels light
8 feet of coupling Pin1 are electrically connected with 3 feet of the grid of metal-oxide-semiconductor Min1 and binary channels optocoupler Pin2 respectively, and the 8 of binary channels optocoupler Pin1
It is equipped with connection resistance between foot and the source electrode of metal-oxide-semiconductor Min1,8 feet of the binary channels optocoupler Pin2 grid with metal-oxide-semiconductor Min2 respectively
It is electrically connected with 3 feet of binary channels optocoupler Pin1, and is connected to 3 feet of binary channels optocoupler Pin1, the 8 of binary channels optocoupler Pin2
It is equipped with connection resistance between foot and the source electrode of metal-oxide-semiconductor Min2,1,2 feet of binary channels optocoupler Pin1 and binary channels optocoupler Pin2's
1,2 feet with monolithic mechatronics.
5. the supply unit according to claim 3 for being used to prepare graphene, characterized in that second switch control circuit packet
Include binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler P4, binary channels optocoupler P1, binary channels light
1 foot and 2 feet of coupling P2, binary channels optocoupler P3 and binary channels optocoupler P4 with monolithic mechatronics, 3 feet of binary channels optocoupler P1 and
3 feet of binary channels optocoupler P3 are electrically connected with the input terminal of output switch circuit, 3 feet and the binary channels optocoupler of binary channels optocoupler P2
8 feet of P1 are electrically connected, and 3 feet of binary channels optocoupler P4 are electrically connected with 8 feet of binary channels optocoupler P3, binary channels optocoupler P1, binary channels
4 feet of optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler P4 respectively by connect resistance after be grounded, binary channels optocoupler P1's
5 feet of 5 feet and binary channels optocoupler P3 are grounded respectively, and 5 feet of binary channels optocoupler P2 are electrically connected with the grid of metal-oxide-semiconductor M2, binary channels
5 feet of optocoupler P4 are electrically connected with the grid of metal-oxide-semiconductor M4, binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and bilateral
6 feet of road optocoupler P4 are electric with 7 feet of binary channels optocoupler P1, binary channels optocoupler P2, binary channels optocoupler P3 and binary channels optocoupler respectively
Connection, 8 feet of binary channels optocoupler P1 are electrically connected with the grid of metal-oxide-semiconductor M1, the grid of 8 feet and metal-oxide-semiconductor M3 of binary channels optocoupler P3
Electrical connection, the input terminal of output switch circuit are electrically connected with 8 feet of 8 feet of binary channels optocoupler P2 and binary channels optocoupler P4 respectively,
5 feet of binary channels optocoupler P2 after forward direction connection diode D1 with 4 feet of binary channels optocoupler P1 by being electrically connected, binary channels optocoupler P4
5 feet connected by forward direction and be electrically connected with 4 feet of binary channels optocoupler P3 after diode D3, in 8 feet and MOS of binary channels optocoupler P1
It is equipped with connection resistance between the source electrode of pipe M1, connection electricity is equipped between 8 feet and the source electrode of metal-oxide-semiconductor M3 of binary channels optocoupler P3
Resistance.
6. according to the supply unit for being used to prepare graphene described in claims 1 or 2 or 3 or 4 or 5, characterized in that further include
Warning circuit（8）, warning circuit and monolithic mechatronics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820246177.3U CN208044346U (en) | 2018-02-11 | 2018-02-11 | It is used to prepare the supply unit of graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820246177.3U CN208044346U (en) | 2018-02-11 | 2018-02-11 | It is used to prepare the supply unit of graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208044346U true CN208044346U (en) | 2018-11-02 |
Family
ID=63952965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820246177.3U Expired - Fee Related CN208044346U (en) | 2018-02-11 | 2018-02-11 | It is used to prepare the supply unit of graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208044346U (en) |
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2018
- 2018-02-11 CN CN201820246177.3U patent/CN208044346U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181102 |