CN207938615U - The inverse conductivity type IGBT of trench gate field cut-off - Google Patents
The inverse conductivity type IGBT of trench gate field cut-off Download PDFInfo
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- CN207938615U CN207938615U CN201820313600.7U CN201820313600U CN207938615U CN 207938615 U CN207938615 U CN 207938615U CN 201820313600 U CN201820313600 U CN 201820313600U CN 207938615 U CN207938615 U CN 207938615U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 8
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- 230000004888 barrier function Effects 0.000 claims description 18
- 230000001413 cellular effect Effects 0.000 claims description 11
- 238000005457 optimization Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
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- 238000011084 recovery Methods 0.000 description 14
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- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Abstract
The inverse conductivity type IGBT of trench gate field cut-off, it is to form the areas P Base in N Base high resistivity semiconductor material surfaces, and N+ emitter region and P+ body contact zones are alternatively formed side by side respectively along device horizontal direction on the areas P Base surface；It is close to region in N+ emitter region and forms the trench area being in contact with N Base high resistivity semiconductors area through the areas P Base and bottom, trench area by positioned at slot inner wall insulating medium layer and by insulating medium layer surround conductive material constitute, gate electrode is drawn by the conductive material in trench area, forms trench gate structure；The common exit of N+ emitter region and P+ body contact zones is emitter electrode；The back side in N Base high resistivity semiconductors area forms collecting zone along device horizontal direction by the N+ types area and P+ type area of continuous checker, and the common exit in N+ types area and P+ type area is collector；The top of collecting zone introduces the heavily doped N-type buffer layer with electric field cut-off effect.
Description
Technical field
The utility model relates to a kind of novel inverse conductivity type IGBT devices of trench gate field cut-off, belong to power semiconductor
Device arts.
Background technology
IGBT（Insulated gate bipolar transistor）It is a kind of novel power semiconductor, with the voltage of MOSFET
Driving, can working frequency is high and the conduction voltage drop of BJT is low, advantage with a high current density, thus be widely used in switch frequency
Rate is in 30kHz hereinafter, realizing the controllable transformation and control to electric energy in power electronic system of the power bracket from 1kW to 5MW.
Fig. 1, which is shown, conventional uses IGBT as three-phase bridge inverter circuit to drive the circuit knot of threephase asynchronous
Structure schematic diagram, because in general power electronic circuit, the presence or load of parasitic inductance have perception, therefore in loop of power circuit
It needs to provide continuous current circuit for the quadergy stored in inductive load after switch cutoff, therefore needs to be every in such application
One diode component of IGBT device inverse parallel.Traditional solution be igbt chip and diode chip for backlight unit are passed through it is certain
Encapsulation technology is connected in anti-parallel to together to provide forward and reverse current path, can be with the appearance of inverse conductivity type IGBT device
IGBT and fly-wheel diode are produced on above same chips by way of integrated circuit, the key benefit of this mode is
The totle drilling cost of chip can be greatly reduced, the power density of power module can be improved（Electric current etc. can be improved in same encapsulation
Grade）, can reduce original IGBT and two chips of fly-wheel diode take turns to operate the junction temperature of chip fluctuation brought, improve core
Piece functional reliability.Therefore inverse conductivity type igbt chip technology is the important directions that IGBT technologies further develop.
It is against two main problems that conductivity type IGBT faces at this stage：First, existing under IGBT forward conduction operating modes
The rebound phenomenon of collector voltage（Snapback）, as shown in Figure 2.Voltage rebound phenomenon be due to inverse conductivity type IGBT there is
The switching of two kinds of operating modes of unipolarity MOSFET conductions and bipolar I GBT conductions, voltage rebound can lead to cellular in parallel
Between or chip in parallel between generate current unevenness, easily lead to device failure.Second, traditional with the antiparallel height of IGBT
Pressure fly-wheel diode is all made of certain carrier lifetime control technology, to improve the Reverse recovery speed of diode, reduces anti-
It is lost to recovery.But in inverse conductivity type IGBT device, among being integrated in same chips because of diode and IGBT, if using carrying
Sub- lifetime control techniques are flowed, can be had an adverse effect to the Performance And Reliability under IGBT operating modes, therefore are needed by device
Part structure optimizes to greatly improve the Reverse recovery performance of diode.Conventional does not carry out any optimization to diode behavior
Inverse conductivity type IGBT cannot generally meet the hard switching requirement of typical inductive load application, can be only applied to some sofe switch patterns
Under, extremely low field is required diode reverse recovery, such as：Single-ended flyback electromagnetic oven application etc..
Invention content
The purpose of the utility model is to overcome the shortcomings of the prior art, and provide one kind in existing inverse conductivity type IGBT
Diode on the basis of, by integrating JBS Schottky diode structures in inverse conductivity type IGBT, do not influence inverse conductivity type IGBT its
Under conditions of its performance, using the lower advantage of Schottky barrier, mould can be connected in diode forward reducing inverse conductivity type IGBT
Under formula while conduction voltage drop, it can significantly reduce the diode reverse recovery charge and Reverse recovery energy of inverse conductivity type IGBT,
Promote the inverse conductivity type IGBT device of trench gate field cut-off of the diode behavior of inverse conductivity type IGBT.
The purpose of this utility model is completed by following technical solution, a kind of inverse conductivity type of trench gate field cut-off
IGBT, it is to form the areas P Base in N- Base high resistivity semiconductor material surfaces, on the areas P Base surface along device
Horizontal direction is alternatively formed N+ emitter region and P+ body contact zones side by side respectively；It is close to region in N+ emitter region to be formed through P Base
The trench area that area and bottom are in contact with N- Base high resistivity semiconductors area, trench area is by the dielectric positioned at slot inner wall
Layer and the conductive material surrounded by insulating medium layer are constituted, and are drawn gate electrode by the conductive material in trench area, are formed trench gate
Structure；The common exit of the N+ emitter region and P+ body contact zones is emitter electrode；In N- Base high resistivity semiconductors
The back side in area forms collecting zone, N+ types area and P along device horizontal direction by the N+ types area and P+ type area of continuous checker
The common exit in+type area is collector；The top of the collecting zone introduces the heavily doped N-type with electric field cut-off effect and buffers
Layer, the heavily doped N-type buffer layer are distributed along device horizontal direction, are located at the Base high resistivity semiconductors areas N- and collecting zone
Between.
As preferred:The Base high resistivity semiconductors areas N- and and emitter metal are formed in the middle part of the P+ body contact zones
Schottky contacts are formed between layer so that inverse conductivity type IGBT emitters form junction barrier schottky diode knot with inter-collector
Structure.
As preferred：Distance L of the areas P+ of P+ body contact zones in N- Base need to pass through optimization, and meet L>0, with
When collector adds forward voltage with emitter, the depletion region that can be formed in junction barrier schottky diode structural region is completely depleted
Region between P+ body contact zones forms the shielding to Schottky contact region, to improve the pressure resistance of junction barrier schottky diode
Reach IGBT peer-levels.
As preferred：The junction barrier schottky diode structure is in the Dummy members of conventional trench-gate field cut-off IGBT
Inside born of the same parents region, the i.e. cellular with the N+ heavily doped regions that trench area is closed on, do not form the N+ heavy doping similar with N+ emitter region
Structure.
The main of the utility model have the beneficial effect that, can be by being used in IGBT structure in conventional trench gate field cut-off type inverse lead
Junction type Schottky barrier diode structure is formed in the Dummy member intracellulars of control short circuit current, it is lower using Schottky barrier
Advantage can significantly reduce inverse while reducing conduction voltage drops of the inverse conductivity type IGBT under diode forward conduction mode
The diode reverse recovery charge and Reverse recovery energy of conductivity type IGBT promotes the diode behavior of inverse conductivity type IGBT.
Description of the drawings
Fig. 1 is the bridge inverter main circuit schematic diagram using IGBT.
Fig. 2 is the diode reverse recovery characteristic schematic diagram of inverse conductivity type IGBT；
Fig. 3 is the inverse conductivity type IGBT structure schematic diagram of conventional trench gate field cut-off；
Fig. 4 is that this patent implements the inverse conductivity type IGBT structure schematic diagram of trench gate field cut-off.
Specific implementation mode
The utility model is described in detail below in conjunction with the accompanying drawings.Shown in Fig. 3, the inverse conductivity type of conventional trench gate field cut-off
IGBT structure is：Generally there are two kinds of IGBT cellulars in trench gate structure IGBT, and one kind is routine IGBT cellulars, in Fig. 3
Shown in 2 left side of groove, internal includes surface N+ heavily doped regions 31, to form emission area structure, and is drawn as emitter
End；Another kind of cellular is Dummy cellulars, internal not contain N+ heavily doped regions as shown in 2 right side of groove in Fig. 3, in figure
Shown in region 33, which draws, such Dummy cellular is mainly used for reducing the current gain of trench gate IGBT,
IGBT amplitude of short circuit is reduced, short circuits are improved, cut-off inverse conductivity type IGBT in conventional trench gate field equally has chip just
Face Dummy structure cells, the region are not efficiently used to promote the overall performance of chip, and the utility model is intended to pair
Dummy cell regions carry out structure improvement, for improving the diode reverse recovery characteristic of inverse conductivity type IGBT.
Shown in Fig. 4, a kind of inverse conductivity type IGBT of trench gate field cut-off described in the utility model, it is in N- Base high electricity
Resistance rate semiconductor material surface forms the areas P Base 1, arranged side by side alternately along device horizontal direction difference on 1 surface of the areas the P Base
Form N+ 31,32 and P+ of emitter region body contact zones 41,42,43,44；It is close to region in N+ emitter region 31,32 to be formed through P
The trench area 2 that the areas Base 1 and bottom are in contact with N- Base high resistivity semiconductors area, trench area 2 is by positioned at slot inner wall
Insulating medium layer 21 and the conductive material 22 surrounded by insulating medium layer 21 are constituted, and are drawn by the conductive material 22 in trench area 2
Gate electrode forms trench gate structure；The common exit of 31,32 and P+ of the N+ emitter region body contact zones 41,42,43,44 is
Emitter electrode；The back side in N- Base high resistivity semiconductors area, along device horizontal direction by the N+ types of continuous checker
The common exit in area 52 and the formation of P+ type area 51 collecting zone, N+ types area 52 and P+ type area 51 is collector；The current collection
The top in area introduces the heavily doped N-type buffer layer 6 with electric field cut-off effect, and the heavily doped N-type buffer layer 6 is along device transverse direction
Directional spreding, between the Base high resistivity semiconductors areas N- and collecting zone.
43,44 middle part of P+ body contact zones described in the utility model formed the Base high resistivity semiconductors areas N- and with transmitting
Schottky contacts are formed between the metal layer of pole so that inverse conductivity type IGBT emitters form two pole of junction barrier schottky with inter-collector
Pipe structure 7.
Distance L of the areas P+ of P+ body contact zones 43,44 described in the utility model in N- Base need to pass through optimization, and full
Sufficient L>0, with the consumption that when collector and emitter add forward voltage, can be formed in 7 region of junction barrier schottky diode structure
Region to the greatest extent between the completely depleted P+ body contact zones in area 43,44, forms the shielding to Schottky contact region, to improve junction barrier Xiao
The pressure resistance of special based diode reaches IGBT peer-levels.
The junction barrier schottky diode structure 7 is in the Dummy cell regions of conventional trench-gate field cut-off IGBT, i.e.,
Inside the cellular with the N+ heavily doped regions 33 that trench area 2 is closed on, 34, not form the N+ similar with N+ emitter region 31,32 heavily doped
Miscellaneous structure.
The operation principle of this example is：In traditional inverse conductivity type IGBT structure of trench gate field cut-off, because to control short circuit
The size of saturation current, reason transient burst of energy is not excessively high and damage when bringing it about Short-circuit Working Condition, can be repeated cyclically
Groove cellular in be inserted into a certain proportion of Dummy Cell, the size of short-circuit saturation current is adjusted with this, part Dummy
Cell influences the reversed pressure-resistant performance of IGBT smaller.
The present embodiment constructs junction barrier schottky in trench gate cellular in the middle part of the regions Dummy Cell（Junction
Barrier Schottky）Structure can utilize the same of the forward voltage drop of the lower advantage reduction diode of Schottky barrier
When, using the P+ heavy doping deep traps of the junction type Schottky-barrier diode both sides, when device bears forward voltage to Xiao Te
Base carries out electric field shielding, while when diode undergoes Reverse recovery, and device is promoted using Schottky snap back recovery characteristics
Whole diode reverse recovery performance reduces reverse recovery loss.
Claims (4)
1. the inverse conductivity type IGBT of trench gate field cut-off, it is characterised in that：P is formed in N- Base high resistivity semiconductor material surfaces
The areas Base（1）, in the areas the P Base（1）Surface is alternatively formed N+ emitter region side by side respectively along device horizontal direction（31、32）
With P+ body contact zones（41、42、43、44）；In N+ emitter region（31、32）It is close to region to be formed through the areas P Base（1）And bottom
The trench area being in contact with N- Base high resistivity semiconductors area（2）, trench area（2）By the insulating medium layer positioned at slot inner wall
（21）With by insulating medium layer（21）The conductive material of encirclement（22）It constitutes, by trench area（2）In conductive material（22）It draws
Gate electrode forms trench gate structure；The N+ emitter region（31、32）With P+ body contact zones（41、42、43、44）Common extraction
End is emitter electrode；The back side in N- Base high resistivity semiconductors area, along device horizontal direction by continuous checker
N+ types area（52）With P+ type area（51）Form collecting zone, N+ types area（52）With P+ type area（51）Common exit be current collection
Pole；The top of the collecting zone introduces the heavily doped N-type buffer layer with electric field cut-off effect（6）, the heavily doped N-type buffering
Layer（6）It is distributed along device horizontal direction, between the Base high resistivity semiconductors areas N- and collecting zone.
2. the inverse conductivity type IGBT of trench gate field cut-off according to claim 1, it is characterised in that:The P+ body contact zones（43、
44）Middle part forms the Base high resistivity semiconductors areas N- and forms Schottky contacts between emitter metal floor so that inverse to lead
Type IGBT emitters form junction barrier schottky diode structure with inter-collector（7）.
3. the inverse conductivity type IGBT of trench gate field cut-off according to claim 2, it is characterised in that：P+ body contact zones（43、44）
Distance L of the areas P+ in N- Base need to pass through optimization, and meet L>0, with when collector and emitter add forward voltage,
It can be in junction barrier schottky diode structure（7）The completely depleted P+ body contact zones of depletion region that region is formed（43、44）Between
Region, forms the shielding to Schottky contact region, and the pressure resistance to improve junction barrier schottky diode reaches IGBT peer-levels.
4. the inverse conductivity type IGBT of trench gate field cut-off according to claim 2 or 3, it is characterised in that：The junction barrier Xiao Te
Based diode structure（7）End the Dummy cell regions of IGBT, i.e. inside the cellular and trench area in conventional trench-gate field
（2）The N+ heavily doped regions closed on（33、34）, do not formed and N+ emitter region（31、32）Similar N+ heavy doping structures.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820313600.7U CN207938615U (en) | 2018-03-07 | 2018-03-07 | The inverse conductivity type IGBT of trench gate field cut-off |
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| CN201820313600.7U CN207938615U (en) | 2018-03-07 | 2018-03-07 | The inverse conductivity type IGBT of trench gate field cut-off |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565284A (en) * | 2018-03-07 | 2018-09-21 | 嘉兴斯达半导体股份有限公司 | A kind of inverse conductivity type IGBT of trench gate field cut-off |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565284A (en) * | 2018-03-07 | 2018-09-21 | 嘉兴斯达半导体股份有限公司 | A kind of inverse conductivity type IGBT of trench gate field cut-off |
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
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