CN207884342U - A kind of photovoltaic power generation apparatus - Google Patents
A kind of photovoltaic power generation apparatus Download PDFInfo
- Publication number
- CN207884342U CN207884342U CN201721837506.3U CN201721837506U CN207884342U CN 207884342 U CN207884342 U CN 207884342U CN 201721837506 U CN201721837506 U CN 201721837506U CN 207884342 U CN207884342 U CN 207884342U
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- Prior art keywords
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- photovoltaic
- power generation
- generation apparatus
- photovoltaic power
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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Abstract
The utility model is related to a kind of photovoltaic power generation apparatus that photoelectric conversion efficiency is high.It includes MPPT controller, encapsulation of photovoltaic cells component, inverter and microprocessor；Photovoltaic cell in encapsulation of photovoltaic cells component is provided, in sequence from bottom to top, with silicon chip matrix, alum gate line, P-type non-crystalline silicon layer, intrinsic amorphous silicon layer, N-type non-crystalline silicon layer；Alum gate line is connected to through conductive rubber leads transparent electrolemma layer；Intrinsic amorphous silicon layer is made of non-crystalline silicon, and surface spraying has Sr14MgSb11Layer.By inserting Sr in intrinsic amorphous silicon layer14MgSb11Afterwards, the light of 200 400nm wave bands can be converted to the light of wavelength 400nm or more, consequently facilitating silicon-based photovoltaic cells are absorbed and utilized.Compared with prior art, the photovoltaic power generation apparatus described in the utility model that can improve electricity conversion, not only stability is high, but also by being converted to wavelength so that the electricity conversion of solar energy greatly improves.
Description
Technical field
The utility model belongs to photovoltaic cell technical field, is related to a kind of photovoltaic generation that photoelectric conversion efficiency is high dress
It sets.
Background technology
It is constantly progressive with the continuous social and economic development with human civilization, the mankind constantly increase the demand of the energy
Long, energy problem has been global problem.The chemical energy source and nuclear power source that the mankind use now are not clean energy resourcies, while existing
The energy can be exploited also cannot maintain the sustainable development of the mankind, and solar energy is made full use of to become a kind of inexorable trend.Solar energy
Clean environment firendly, it is inexhaustible, and do not generate any environmental pollution, be the mankind it is available it is most abundant can
The renewable sources of energy.
Photovoltaic generation is that solar energy is converted into electric energy using solar cell according to photovoltaic effect principle,
Photovoltaic power generation apparatus is mainly made of solar panel, controller and inverter three parts.However, existing photovoltaic generation dress
It sets it there are costs that higher, power utilization efficiency is poor, especially in the case where weather is changeable, need artificially to carry out power supply point
With regulation and control, lead to that there are the controls of inconvenient, power supply to allocate unreasonable defect.
In addition, solar cell is usually the photoelectric conversion layer that silicon-based semiconductor material makes at present, can only at most absorb
Wavelength is 400 to the light between 900nm.And the sunlight other than the wave-length coverage can be reflected by the photoelectric conversion layer, it can not
It is converted into electric energy.The sunlight of the part is wasted as a result, so that the light conversion efficiency of solar cell is relatively low.
Invention content
In order to solve the above-mentioned technical problem, the utility model provides a kind of photovoltaic generation that can improve photoelectric conversion efficiency
Device.
Photovoltaic power generation apparatus described in the utility model, including MPPT controller 1, encapsulation of photovoltaic cells component 2, inverter
6 and microprocessor 8；The MPPT controller 1 connects and is controlled by microprocessor 8, is also connected with and controls DC/DC converters 3；Institute
2 output end of encapsulation of photovoltaic cells component is stated to connect with 3 input terminal of DC/DC converters；3 output end of the DC/DC converters connection
Charging control circuit 4；The charging control circuit 4 is separately connected accumulator group 5 and inverter 6；5 output end of accumulator group
It is connect with 6 input terminal of inverter；The microprocessor 8 controls connection charging control circuit 4 and inverter 6 respectively；The inversion
6 output end of device connects control switching circuit 7；Photovoltaic cell 24 in the encapsulation of photovoltaic cells component 2 is set successively from bottom to top
There are silicon chip matrix 241, alum gate line 242, P-type non-crystalline silicon layer 243, intrinsic amorphous silicon layer 244, N-type non-crystalline silicon layer 245；The aluminium
Grid line 242 is connected to through conductive rubber 246 leads transparent electrolemma layer 22；The intrinsic amorphous silicon layer 244 is made of non-crystalline silicon, table
Face is coated with Sr14MgSb11Layer 247.
Photovoltaic power generation apparatus described in the utility model, the encapsulation of photovoltaic cells component 2 include covering successively from top to bottom
Cap rock 21, transparent conductive film layer 22, adhesive upper layer 23, photovoltaic cell 24, adhesive lower layer 25 and substrate layer 26.
Photovoltaic power generation apparatus described in the utility model, the coating 21 and substrate layer 26 are by transparent toughened glass system
At.
Photovoltaic power generation apparatus described in the utility model, described adhesive upper layer 23 and lower layer 25 are ethyl vinyl acetate second
Alkene copolymer film layer.
Photovoltaic power generation apparatus described in the utility model, the transparent conductive film layer 22 are graphene transparent conductive film layer.
By inserting Sr in intrinsic amorphous silicon layer14MgSb11Afterwards, the light of 200-400nm wave bands can be converted to wavelength
The light of 400nm or more, consequently facilitating silicon-based photovoltaic cells are absorbed and utilized.Compared with prior art, energy described in the utility model
The photovoltaic power generation apparatus of electricity conversion is improved, not only stability is high, but also by being converted to wavelength so that solar energy
Electricity conversion greatly improve.
Description of the drawings
Fig. 1：Photovoltaic power generation apparatus schematic diagram described in the utility model.Fig. 2：Encapsulation of photovoltaic cells component diagram.Figure
3：Photovoltaic cell schematic diagram.MPPT controller -1, encapsulation of photovoltaic cells component -2, DC/DC converters -3, charging control circuit -
4, accumulator group -5, inverter -6, control switching circuit -7, microprocessor 8, coating -21, transparent conductive film layer -22, bonding
Agent upper layer -23, photovoltaic cell -24, adhesive lower layer -25, substrate layer -26, silicon chip matrix -241, alum gate line -242, p-type amorphous
Silicon layer -243, intrinsic amorphous silicon layer -244, N-type non-crystalline silicon layer -245, conductive rubber -246, Sr14MgSb11Layer -247.
Specific implementation mode
Photovoltaic power generation apparatus described in the utility model is described further with reference to specific embodiment, but this
The protection domain of utility model is not limited to this.
Embodiment 1
Photovoltaic power generation apparatus, including MPPT controller 1, encapsulation of photovoltaic cells component 2, inverter 6 and microprocessor 8；Institute
MPPT controller 1 is stated to connect and be controlled by microprocessor 8, be also connected with and control DC/DC converters 3；The encapsulation of photovoltaic cells
2 output end of component is connect with 3 input terminal of DC/DC converters；3 output end of DC/DC converters connects charging control circuit 4；
The charging control circuit 4 is separately connected accumulator group 5 and inverter 6；5 output end of accumulator group is inputted with inverter 6
End connection；The microprocessor 8 controls connection charging control circuit 4 and inverter 6 respectively；6 output end of the inverter connects
Control switching circuit 7；Photovoltaic cell 24 in the encapsulation of photovoltaic cells component 2 be provided, in sequence from bottom to top, with silicon chip matrix 241,
Alum gate line 242, P-type non-crystalline silicon layer 243, intrinsic amorphous silicon layer 244, N-type non-crystalline silicon layer 245；The alum gate line 242 is through conducting resinl
Body 246, which is connected to, leads transparent electrolemma layer 22；The intrinsic amorphous silicon layer 244 is made of non-crystalline silicon, and surface spraying has
Sr14MgSb11Layer 247.
The encapsulation of photovoltaic cells component 2 is from top to bottom successively including on coating 21, transparent conductive film layer 22, adhesive
Layer 23, photovoltaic cell 24, adhesive lower layer 25 and substrate layer 26.The coating 21 and substrate layer 26 are by transparent toughened glass
It is made.Described adhesive upper layer 23 and lower layer 25 are ethylene-vinyl acetate copolymer film layer.The transparent conductive film layer 22
For graphene transparent conductive film layer.
By inserting Sr in intrinsic amorphous silicon layer14MgSb11Afterwards, the light of 200-400nm wave bands can be converted to wavelength
The light of 400nm or more, consequently facilitating silicon-based photovoltaic cells are absorbed and utilized.Compared with prior art, energy described in the utility model
The photovoltaic power generation apparatus of electricity conversion is improved, not only stability is high, but also by being converted to wavelength so that solar energy
Electricity conversion greatly improve.
Claims (5)
1. a kind of photovoltaic power generation apparatus, which is characterized in that including MPPT controller (1), encapsulation of photovoltaic cells component (2), inversion
Device (6) and microprocessor (8)；The MPPT controller (1) connects and is controlled by microprocessor (8), is also connected with and controls DC/DC
Converter (3)；Encapsulation of photovoltaic cells component (2) output end is connect with DC/DC converters (3) input terminal；The DC/DC becomes
Parallel operation (3) output end connects charging control circuit (4)；The charging control circuit (4) is separately connected accumulator group (5) and inversion
Device (6)；Accumulator group (5) output end is connect with inverter (6) input terminal；The microprocessor (8) controls connection respectively
Charging control circuit (4) and inverter (6)；Inverter (6) the output end connection control switching circuit (7)；The encapsulation light
It is non-that photovoltaic cell (24) in photovoltaic cell components (2) is provided, in sequence from bottom to top, with silicon chip matrix (241), alum gate line (242), p-type
Crystal silicon layer (243), intrinsic amorphous silicon layer (244), N-type non-crystalline silicon layer (245)；The alum gate line (242) is through conductive rubber (246)
It is connected to and leads transparent electrolemma layer (22)；The intrinsic amorphous silicon layer (244) is made of non-crystalline silicon, and surface spraying has
Sr14MgSb11Layer (247).
2. photovoltaic power generation apparatus according to claim 1, which is characterized in that the encapsulation of photovoltaic cells component (2) is from upper
Arrive down includes under coating (21), transparent conductive film layer (22), adhesive upper layer (23), photovoltaic cell (24), adhesive successively
Layer (25) and substrate layer (26).
3. photovoltaic power generation apparatus according to claim 2, which is characterized in that the coating (21) and substrate layer (26) are equal
It is made of transparent toughened glass.
4. photovoltaic power generation apparatus according to claim 2, which is characterized in that under described adhesive upper layer (23) and adhesive
Layer (25) is ethylene-vinyl acetate copolymer film layer.
5. photovoltaic power generation apparatus according to claim 2, which is characterized in that the transparent conductive film layer (22) is graphene
Transparent conductive film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721837506.3U CN207884342U (en) | 2017-12-26 | 2017-12-26 | A kind of photovoltaic power generation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721837506.3U CN207884342U (en) | 2017-12-26 | 2017-12-26 | A kind of photovoltaic power generation apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207884342U true CN207884342U (en) | 2018-09-18 |
Family
ID=63504109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721837506.3U Expired - Fee Related CN207884342U (en) | 2017-12-26 | 2017-12-26 | A kind of photovoltaic power generation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207884342U (en) |
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2017
- 2017-12-26 CN CN201721837506.3U patent/CN207884342U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180918 Termination date: 20181226 |
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| CF01 | Termination of patent right due to non-payment of annual fee |