CN207868190U - It is a kind of to be used to encapsulate varistor and the matrix frame patch encapsulating structure of Y capacitance - Google Patents
It is a kind of to be used to encapsulate varistor and the matrix frame patch encapsulating structure of Y capacitance Download PDFInfo
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- CN207868190U CN207868190U CN201820356961.XU CN201820356961U CN207868190U CN 207868190 U CN207868190 U CN 207868190U CN 201820356961 U CN201820356961 U CN 201820356961U CN 207868190 U CN207868190 U CN 207868190U
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- dao
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- capacitance
- varistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The utility model provides a kind of for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, belong to semiconductor components and devices encapsulation field, including upper bracket, lower bracket, chip, black glue body, it is characterized in that, upper bracket includes the first Ji Dao and the first pin, first Ji Dao and the first pin are connected to form stepped construction, first ends Ji Dao downward bending forms the first bending part, first bending cross section is set as V-type, first bending part bottom end is contacted with chip upper surface, and there are pre-determined distances between chip and the first base island；Lower bracket includes the second Ji Dao and second pin, second Ji Dao and second pin are connected to form " convex " type structure, the upward bending in second ends Ji Dao forms the second bending part, second bending cross section is set as reverse V-shaped, second bending part top is contacted with chip lower surface, and there are pre-determined distances between chip and the second base island；Solves the problems such as frame utilization rate is low, product is electrically poor.
Description
Technical field
The utility model is related to the encapsulation technology fields of semiconductor components and devices, and in particular to one kind is for encapsulating varistor
With the matrix frame patch encapsulating structure of Y capacitance.
Background technology
With the development of science and technology electronic product also constantly develops, electronic product is towards light, small, thin development.The prior art
Varistor and Y capacitance manufacture mostly use steel wire straight cutting or single steel frame greatly, frame utilization rate is low, production efficiency
It is low, and use steel disc as pin in production, steel disc is oxidizable as the pin of varistor and Y capacitance, drawing after oxidation
Foot can have an impact varistor and the electrical of capacitance.
Invention content
To solve the above-mentioned problems, the utility model provides a kind of for encapsulating varistor and the matrix frame of Y capacitance
Frame patch encapsulating structure can effectively solve the problem that existing varistor and Y capacitance frame utilization rate be low, pin easy damaged, product electricity
The problems such as property is poor.
The utility model is technical solution used by solving its technical problem：One kind is for encapsulating varistor and Y
The matrix frame patch encapsulating structure of capacitance, including upper bracket, lower bracket, chip, black glue body, which is characterized in that the chip
It is set as voltage dependent resistor chip or Y capacitance chip, upper bracket includes the first Ji Dao and the first pin, the first Ji Dao and the first pin
It is connected to form stepped construction, the first ends Ji Dao downward bending forms the first bending part, and the first bending cross section is set
Be set to V-type, the bottom end of the first bending part is contacted with chip upper surface, between chip upper surface and the first base island there are it is default away from
From；Lower bracket includes the second Ji Dao and second pin, and the second Ji Dao and second pin are connected to form " convex " type structure, the second Ji Dao
The upward bending in end forms the second bending part, and the second bending cross section is set as reverse V-shaped, the top of the second bending part with
The lower surface of chip contacts, and there are pre-determined distances between chip lower surface and the second base island；The first Ji Dao of the black glue body package,
Chip, the second Ji Dao form plastic-sealed body, and first pin, second pin is exposed that bent pin structure is formed except plastic-sealed body.
Further, the upper surface of the chip is weldingly connected by the bottom end of tin cream and the first bending part, under chip
Surface is weldingly connected by the top of tin cream and the second bending part.
Further, first pin is respectively provided with the first junctions Ji Dao and second pin with the second junctions Ji Dao
There are plane bend folding part, first Ji Dao, angles of second Ji Dao respectively with adjacent plane bending part to be disposed as obtuse angle.
Further, the chip cross section is set as rectangular or round.
Further, the size of the chip is more than the size of the first Ji Dao, the second Ji Dao：Chip cross section is circle
When, the diameter of chip is more than the width of the first Ji Dao, the second Ji Dao；When chip cross section is rectangular, the width of chip is more than the
The width of one Ji Dao, the second Ji Dao.
Further, first pin, second pin end set have recess.
Further, the black glue body is set as epoxy resin colloid.
Further, the upper bracket, lower bracket are all made of copper material.
The utility model has the beneficial effects that this structure is matrix form frame patch encapsulating structure, product life can be improved
Efficiency is produced, by setting varistor or Y capacitance to the form of injection molding plastic packaging, Ji Dao and part planar bending part are enclosed in plastic packaging
In vivo, Ji Dao and chip can be avoided to be damaged by external force, and around black glue plastic-sealed body package chip, Ji Dao has with chip edge
Certain safe distance is avoided that between Ji Dao and chip the phenomenon that generating arcing, the first Ji Dao of setting and the first pin phase
Company forms stepped construction, and the second Ji Dao is connected to form " convex " type structure with second pin, and chip distance only passes through V-structure
Bottom end be connected respectively with the first Ji Dao and the second Ji Dao, there are default skies between the first Ji Dao and the second base island respectively for chip
Gap can prevent moisture from entering black glue body and lower bracket junction, avoid black glue and holder layering under hot and humid environment
Phenomenon, and be that line contacts between chip and upper and lower bracket, reduce the influence electrical to product；Pin end is all well-regulated
Recess can increase scolding tin during user's use and climb tin ability；It is preferred that copper material is frame material, can reduce because of pin material
The influence electrical to product.
Description of the drawings
Fig. 1 is the main structure diagram of the utility model；
Fig. 2 is the overlooking structure diagram of the utility model；
Fig. 3 is the structural schematic diagram of the utility model upper bracket；
Fig. 4 is the structural schematic diagram of the utility model lower bracket.
In figure：1. upper bracket, 11. first Ji Dao, 12. first pins, 13. first bending parts, 2. lower brackets, 21. second
Ji Dao, 21. second pins, 23. second bending parts, 3. chips, 4. tin creams, 5. plastic-sealed bodies, 6. plane bend folding parts, 7. recesses, 8.
Black glue body.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only explaining this
Utility model is not used to limit the utility model.
As Figure 1-Figure 4, the matrix frame patch that the utility model discloses a kind of for encapsulating varistor and Y capacitance
Chip package, including upper bracket 1, lower bracket 2, chip 3, black glue body 8, the chip 3 are set as Y capacitance chip, upper bracket 1
Including the first base island 11 and the first pin 12, the first base island 11 and the first pin 12 are connected to form stepped construction, the first Ji Dao
11 end downward bendings form the first bending part 13, and 13 cross section of the first bending part is set as V-type, the first bending part 13
Bottom end is contacted with 3 upper surface of chip, and there are pre-determined distances between 3 upper surface of chip and the first base island 11, that is, ensures only to allow
V-arrangement bending bottom of the one base island 11 above chip 3 is contacted with 3 upper surface of chip so that is connect for line between upper bracket and chip
It touches, product is electrically influenced small；Lower bracket 2 includes the second base island 21 and second pin 22, the second base island 21 and second pin 22
It is connected to form " convex " type structure, the upward bending in 21 end of the second base island forms the second bending part 23, and second bending part 23 is horizontal
Section is set as reverse V-shaped, and the top of the second bending part 23 is contacted with the lower surface of chip 3,3 lower surface of chip and the second base island 21
Between there are pre-determined distances, that is, ensure only to allow the second base island 21 at the top of the V-arrangement bending below chip 3 with 3 lower surface of chip
Contact so that contact, product is electrically influenced small for line between lower bracket 2 and chip 3；The black glue body 8 wraps up the first Ji Dao
11, chip 3, the second base island 21 form plastic-sealed body 5, and first pin 12, second pin 22 are exposed to be formed except plastic-sealed body 5
Bent pin structure, and the first base island 11, the second base island 21 and plane bend folding part 6 are enclosed in plastic-sealed body, can avoid Ji Dao and chip
The deformed damaged by external force.
The upper surface of chip 3 described in the utility model is weldingly connected by tin cream 4 and the bottom end of the first bending part 13, core
The lower surface of piece 3 is weldingly connected by tin cream 4 and the top of the second bending part 23.
First pin, 12 and first base island, 11 junction described in the utility model and second pin 22 and the second base island 21
Junction is both provided with plane bend folding part 6, first base island 11, the second base island 21 folder with adjacent plane bending part 6 respectively
Angle is disposed as obtuse angle, can edge of the islands Shi Ji far from chip, formed a safe distance, avoid the edge of Ji Dao and chip
Generate arcing phenomena.
3 cross section of chip described in the utility model is set as rectangular or round.
The size of chip 3 described in the utility model is more than the size on the first base island 11, the second base island 21：Chip 3 is transversal
When face is round, the diameter of chip 3 is more than the width on the first base island 11, the second base island 21；When 3 cross section of chip is rectangular, core
The width of piece 3 is more than the width on the first base island 11, the second base island 21；It further avoids Ji Dao and chip edge generation arcing is existing
As.
First pin 12 described in the utility model, 22 end set of second pin have recess 7, can be effectively increased scolding tin
Climb tin ability.
Black glue body 8 described in the utility model is set as epoxy resin colloid.
Upper bracket 1 described in the utility model, lower bracket 2 are all made of copper material, and copper material good conductivity can reduce because of pin
The material influence electrical to product.
Another embodiment of the utility model can also set the chip 3 to voltage dependent resistor chip, to varistor
Encapsulation.
The utility model is set as matrix form frame patch encapsulating structure, can improve production efficiency, by that will press
Quick resistance or Y capacitance are set as the form of injection molding plastic packaging, and Ji Dao and part planar bending part are enclosed in plastic-sealed body, can avoid base
Island and chip are damaged by external force, and around black glue plastic-sealed body package chip, Ji Dao has certain safe distance with chip edge,
The phenomenon that generating arcing is avoided that between Ji Dao and chip, and the first Ji Dao and the first pin of setting are connected to form staged knot
Structure, the second Ji Dao and second pin are connected to form " convex " type structure, and chip distance is only by the bottom end of V-structure respectively with the
One Ji Dao and the second Ji Dao is connected, and there are default gaps between the first Ji Dao and the second base island respectively for chip, can prevent wet
Gas enters black glue body and lower bracket junction, avoids the phenomenon that black glue and holder are layered under hot and humid environment, and chip with
It is line contact between upper and lower bracket, reduces the influence electrical to product；The all well-regulated recess in pin end, can with
Increase scolding tin during the use of family and climbs tin ability；It is preferred that copper material is frame material, can reduce because pin material is electrical to product
It influences.
Claims (8)
1. a kind of for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, including upper bracket（1）, lower bracket
（2）, chip（3）, black glue body（8）, which is characterized in that the chip（3）It is set as voltage dependent resistor chip or Y capacitance chip, on
Holder（1）Including the first Ji Dao（11）With the first pin（12）, the first Ji Dao（11）With the first pin（12）It is connected to form ladder
Formula structure, the first Ji Dao（11）End downward bending forms the first bending part（13）, first bending part（13）Cross section is set
It is set to V-type, the first bending part（13）Bottom end and chip（3）Upper surface contacts, chip（3）Upper surface and the first Ji Dao（11）It
Between there are pre-determined distances；Lower bracket（2）Including the second Ji Dao（21）And second pin（22）, the second Ji Dao（21）And second pin
（22）It is connected to form " convex " type structure, the second Ji Dao（21）The upward bending in end forms the second bending part（23）, second folding
Turn of bilge（23）Cross section is set as reverse V-shaped, the second bending part（23）Top and chip（3）Lower surface contact, chip（3）Under
Surface and the second Ji Dao（21）Between there are pre-determined distances；The black glue body（8）Wrap up the first Ji Dao（11）, chip（3）, second
Ji Dao（21）Form plastic-sealed body（5）, first pin（12）, second pin（22）It is exposed in plastic-sealed body（5）Except formed sea
Gull leg structure.
2. according to claim 1 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, the chip（3）Upper surface pass through tin cream（4）With the first bending part（13）Bottom end be weldingly connected, chip（3）Under
Surface passes through tin cream（4）With the second bending part（23）Top be weldingly connected.
3. according to claim 1 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, first pin（12）With the first Ji Dao（11）Junction and second pin（22）With the second Ji Dao（21）Junction is equal
It is provided with plane bend folding part（6）, first Ji Dao（11）, the second Ji Dao（21）Respectively with adjacent plane bending part（6）Folder
Angle is disposed as obtuse angle.
4. according to claim 1 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, the chip（3）Cross section is set as rectangular or round.
5. according to claim 4 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, the chip（3）Size be more than the first Ji Dao（11）, the second Ji Dao（21）Size：Chip（3）Cross section is circle
When, chip（3）Diameter be more than the first Ji Dao（11）, the second Ji Dao（21）Width；Chip（3）When cross section is rectangular, core
Piece（3）Width be more than the first Ji Dao（11）, the second Ji Dao（21）Width.
6. according to claim 1 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, first pin（12）, second pin（22）End set has recess（7）.
7. according to claim 1 for encapsulating varistor and the matrix frame patch encapsulating structure of Y capacitance, feature
It is, the black glue body（8）It is set as epoxy resin colloid.
8. the matrix frame patch for being used to encapsulate varistor and Y capacitance according to claim 1-7 any one of them encapsulates knot
Structure, which is characterized in that the upper bracket（1）, lower bracket（2）It is all made of copper material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820356961.XU CN207868190U (en) | 2018-03-16 | 2018-03-16 | It is a kind of to be used to encapsulate varistor and the matrix frame patch encapsulating structure of Y capacitance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820356961.XU CN207868190U (en) | 2018-03-16 | 2018-03-16 | It is a kind of to be used to encapsulate varistor and the matrix frame patch encapsulating structure of Y capacitance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207868190U true CN207868190U (en) | 2018-09-14 |
Family
ID=63455991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820356961.XU Active CN207868190U (en) | 2018-03-16 | 2018-03-16 | It is a kind of to be used to encapsulate varistor and the matrix frame patch encapsulating structure of Y capacitance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207868190U (en) |
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2018
- 2018-03-16 CN CN201820356961.XU patent/CN207868190U/en active Active
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 273100 No. 166 Chunqiu East Road, Qufu City, Jining City, Shandong Province Patentee after: Shandong crystal guided microelectronic Limited by Share Ltd Address before: 273100 No. 166 Chunqiu East Road, Qufu City, Jining City, Shandong Province Patentee before: Shandong Jing Dao Microtronics A/S |
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| CP01 | Change in the name or title of a patent holder |