CN207845777U - A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment - Google Patents
A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment Download PDFInfo
- Publication number
- CN207845777U CN207845777U CN201820064022.8U CN201820064022U CN207845777U CN 207845777 U CN207845777 U CN 207845777U CN 201820064022 U CN201820064022 U CN 201820064022U CN 207845777 U CN207845777 U CN 207845777U
- Authority
- CN
- China
- Prior art keywords
- chamber
- cavity
- cavities
- pneumatic
- preheater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model is related to a kind of silicon solar cell backs to be passivated duplicature manufacturing process filming equipment, including feed cavity successively in tandem, preheater, ALD process cavities, cushion chamber, SiNx process cavities, cooling chamber and discharging chamber, the feed side of feed cavity is equipped with No.1 pneumatic door, No. two pneumatic doors are connected between feed cavity and preheater, preheater is connected with ALD process cavities, No. three pneumatic doors are connected between ALD process cavities and cushion chamber, No. four pneumatic doors are connected between cushion chamber and SiNx process cavities, SiNx process cavities are connected with cooling chamber, No. five pneumatic doors are connected between cooling chamber and discharging chamber, the exit side of discharging chamber is equipped with No. six pneumatic doors, all cavitys are equipped with slide glass transmission mechanism.The utility model comes out the Al that can disposably complete back of the body passivation technology processing procedure from discharging chamber again after silicon chip is entered by feed cavity2O3The deposition of the two membranes of plated film and SiNx plated films improves the performance of solar battery sheet, realizes the upgrading of former filming equipment, greatlys save cost.
Description
Technical field
The utility model is related to a kind of silicon chip of solar cell filming equipment more particularly to a kind of silicon solar cell back are blunt
Change duplicature manufacturing process filming equipment.
Background technology
Currently, the PECVD (plasma enhanced chemical vapor deposition equipment) that silica-based solar cell manufacturing enterprise uses
SiN can only be carried out to the silicon chip of solar cellxPlated film (silicon nitride plated film) should such as a SiNA generation, SiNA bis- generations filming equipments
Equipment generally comprises the feed cavity, preheater, SiN being sequentially connectedX(silicon nitride) process cavity, cooling chamber and discharging chamber, it is each
The side of cavity is equipped with slide glass transmission mechanism, feed cavity, preheater, SiNXProcess cavity and each having heaters part of discharging chamber, into
Expect chamber, SiNXProcess cavity is connected by pipeline with respective vacuum pump, balance air source respectively with discharging chamber.With silicon solar electricity
Pool technology is constantly progressive, new A l2O3(alundum (Al2O3)) back of the body passivation technology technology gradually grows up, but existing etc.
It is that can not complete Al that gas ions, which enhance chemical vapor depsotition equipment,2O3Passivation technology processing procedure is carried on the back, Gu will face technology elimination.
Invention content
In order to solve the above-mentioned technical problem the utility model, provides a kind of double-deck membrane process system of silicon solar cell back passivation
Journey filming equipment, by being transformed to original plasma enhanced chemical vapor deposition equipment, to realize
Al2O3Passivation technology processing procedure is carried on the back, and silicon chip disposably deposits two membranes (Al from discharging is fed on silicon chip2O3Plated film and
SiNxPlated film), the performance of solar battery sheet is improved, equipment cost is also saved.
The above-mentioned technical problem of the utility model is mainly to be addressed by following technical proposals：The utility model packet
Include feed cavity, preheater, SiNXProcess cavity, cooling chamber and discharging chamber, further include ALD process cavities and cushion chamber, feed cavity, pre-
Heating chamber, ALD process cavities, cushion chamber, SiNXProcess cavity, cooling chamber and discharging chamber successively in tandem, the feed side of feed cavity
No. two pneumatic doors are connected with equipped with No.1 pneumatic door, between feed cavity and preheater, preheater is connected with ALD process cavities,
No. three pneumatic doors, cushion chamber and SiN are connected between ALD process cavities and cushion chamberXNo. four pneumatic doors are connected between process cavity,
SiNXProcess cavity is connected with cooling chamber, and No. five pneumatic doors are connected between cooling chamber and discharging chamber, and the exit side of discharging chamber is equipped with
No. six pneumatic doors, all cavitys are equipped with slide glass transmission mechanism.Feed cavity, preheater, SiNXProcess cavity, cooling chamber and discharging
Chamber utilizes existing cavity in existing silicon chip film-coated equipment.Each pneumatic door plays the work for being sealed and being isolated to adjacent chamber
With.Silicon chip is placed on slide glass frame, is entered from feed cavity, under the drive of slide glass transmission mechanism, passes through feed cavity, pre-add successively
Hot chamber, ALD process cavities, cushion chamber, SiNXProcess cavity, cooling chamber and discharging chamber, finally come out from discharging chamber.ALD process cavities are real
Existing Al2O3Passivation technology processing procedure is carried on the back, the Al of silicon chip is completed2O3Plated film, SiNXProcess cavity realizes the SiN of silicon chipxPlated film.This practicality is new
Type comes out from discharging chamber again after silicon chip is entered by feed cavity, can disposably complete Al2O3Plated film and SiNxTwo layers of plated film
The deposition of film improves the performance of solar battery sheet.And device upgrade can be achieved with by transformation on existing equipment, then significantly
The cost for having saved filming equipment avoids unnecessary waste.
Preferably, the ALD process cavities are equipped with seal cover board, seal cover board is equipped with inside and heating wire is housed
The reactor of heating plate and implantation reaction source, the ALD process cavities are connected by pipeline with vacuum pump, balance air source respectively,
The seal cover board of ALD process cavities is equipped with pressure gauge.Slide glass frame is entered from preheater in ALD process cavities, by ALD techniques
When below the reactor of chamber, the air source (TMA trimethyl aluminiums and deionized water) of reaction is participated in by the matter in air distribution system
It is passed through in reactor to amount flow controller constant current, reactor is ALD formula reactors, and reactant gas source is sent to slide glass by reactor
Silicon chip surface on frame is chemically reacted, and the Al of first layer is carried out to silicon chip2O3Plated film, when completing plated film by ALD process cavities
In heating plate silicon chip is heated, be Al2O3Coating process processing procedure provides the heat of stable and uniform, accurately controls reaction temperature
Degree, this process are completed from into ALD process cavities to the moving process for leaving ALD process cavities in slide glass frame.
Preferably, the reactor be in plate body shape, reactor towards the ALD process cavities one side be equipped with it is multiple rows of
Aperture is set in reactor there are one the ventilation pipe being connected to the aperture, and the import of ventilation pipe is connected with reaction source.Ginseng
The air source of reaction is added to be chemically reacted by the silicon chip surface that the aperture being covered on reactor is uniformly fed on slide glass frame, it is right
Silicon chip carries out the Al of first layer2O3Plated film, it is ensured that Al2O3Plated film is more uniform.
Preferably, the cushion chamber is equipped with cover board, on cover board and cushion chamber bottom, which is equipped with, internal is equipped with heating wire
Heating plate, the cushion chamber is connected by pipeline and vacuum pump, balance air source respectively, and the cover board of cushion chamber is equipped with pressure
Meter.The setting of cushion chamber, on the one hand in ALD process cavities and SiNxBuffer action is played between process cavity, is on the other hand slide glass
Frame transmission provides corresponding buffer time, optimizes transmission time and production capacity.
Preferably, the slide glass transmission mechanism includes motor, driven wheel and idler wheel, the lateral surface of each cavity is equipped with
1~2 motor and multiple driven wheels, motor are connected with driven wheel by driving belt, and the wheel shaft of driven wheel is within the cavity
One end is equipped with the idler wheel.Motor rotates, and drives driven wheel rotation by driving belt, then driven in cavity by driven wheel
The idler wheel in portion rotates.Slide glass frame is located on idler wheel, the rotation of idler wheel, and slide glass frame is driven to be moved to going out for cavity from the import of cavity
Mouthful, complete the transmission of slide glass frame.
The utility model has the beneficial effects that：On the basis of original plasma enhanced chemical vapor deposition equipment, increase
ALD process cavities and cushion chamber, ALD process cavities has been added to realize Al2O3Passivation technology processing procedure is carried on the back, the Al of silicon chip is completed2O3Plated film, SiNX
Process cavity realizes the SiN of silicon chipxPlated film so that silicon chip comes out from discharging chamber again after being entered by feed cavity, can disposably complete
Al2O3Plated film and SiNxThe deposition of the two membranes of plated film improves the performance of solar battery sheet.And in existing equipment (SiNA mono-
Generation, two generation filming equipments) on by transformation can be achieved with device upgrade, then the cost of filming equipment is greatly saved.
Description of the drawings
Fig. 1 is a kind of overlooking structure diagram of the utility model.
Fig. 2 is a kind of overlooking structure diagram that feed cavity and preheater open cover board in the utility model.
Fig. 3 is a kind of overlooking structure diagram that ALD process cavities and cushion chamber open cover board in the utility model.
Fig. 4 is SiN in the utility modelXProcess cavity opens a kind of overlooking structure diagram of cover board.
1. feed cavity in figure, 2. preheater, 3.ALD process cavities, 4. cushion chambers, 5.SiNXProcess cavity, 6. cooling chambers, 7.
Discharging chamber, 8. motors, 9. driven wheels, 10. idler wheels, 11. No.1 pneumatic doors, 12. No. two electrically operated gates, 13. No. three pneumatic doors, 14.
No. four pneumatic doors, 15. No. five pneumatic doors, 16. No. six pneumatic doors, 17. infrared lamps, 18. vacuum pumps, 21. heating plates, 31. add
Hot plate, 32. reactors, 33. apertures, 34. vacuum pumps, 41. heating plates, 42. vacuum pumps, 51. heaters, 52. plasmas are anti-
Answer device, 53. vacuum pumps, 71. vacuum pumps, 100. balance air sources.
Specific implementation mode
Below with reference to the embodiments and with reference to the accompanying drawing the technical solutions of the present invention will be further described.
Embodiment：A kind of silicon solar cell back of the present embodiment is passivated duplicature manufacturing process filming equipment, such as Fig. 1 institutes
Show, including feed cavity 1, preheater 2, ALD process cavities 3, cushion chamber 4, SiNXProcess cavity 5, cooling chamber 6 and discharging chamber 7 and electricity
Gas holder, feed cavity, preheater, ALD process cavities, cushion chamber, SiNXProcess cavity, cooling chamber and discharging chamber successively in tandem,
The feed side of feed cavity is equipped with No.1 pneumatic door 11, and No. two pneumatic doors 12, pre-add are connected between feed cavity and preheater
Hot chamber is connected and is connected to ALD process cavities, is connected with No. three pneumatic doors 13 between ALD process cavities and cushion chamber, cushion chamber and
SiNXNo. four pneumatic doors 14, SiN are connected between process cavityXProcess cavity is connected and is connected to cooling chamber, cooling chamber and discharging chamber it
Between be connected with No. five pneumatic doors 15, the exit side of discharging chamber is equipped with No. six pneumatic doors 16.
Having heaters is installed, heater is made of multiple infrared lamps 17, and the left side of feed cavity is logical on the cover board of feed cavity 1
It crosses pipeline with balance air source 100 to be connected, the bottom of feed cavity is connected with pipeline, the other end and vacuum pump 18 of pipeline by angle valve
It is connected, pressure gauge is installed on the cover board of feed cavity.
On the cover board of preheater 2 and cavity bottom installs having heaters, and heater is that inside is equipped with adding for heating wire
Hot plate 21.
Seal cover board is installed in ALD process cavities 3, internal 31 He of heating plate that heating wire is housed is installed on seal cover board
The reactor 32 of reaction source is inculcated, reactor is in plate body shape, and reactor is several rows of small towards being covered on one side for ALD process cavities
Hole 33, reactor is interior there are one the ventilation pipe being connected to all apertures, and the import of ventilation pipe passes through pipeline and reaction source phase
Even, the air source for participating in reaction is TMA (trimethyl aluminium) and deionized water, passes through the mass flow controller perseverance of air distribution system
It is conveyed to reactor to stream.The bottom of ALD process cavities is also equipped with the internal heating plate that heating wire is housed.A left side for ALD process cavities
Side is connected by pipeline with balance air source, and the bottoms of ALD process cavities is connected with pipeline by angle valve, the other end of pipeline and is carried
The vacuum pump 34 of frequency converter is connected, and pressure gauge is equipped on the seal cover board of ALD process cavities.
Cover board is installed on cushion chamber 4, the internal heating plate 41 that heating wire is housed, the bottom of cushion chamber are installed on cover board
The internal heating plate that heating wire is housed also is installed.The pipeline that passes on left of cushion chamber is connected with balance air source, the bottom of cushion chamber
Portion is connected with pipeline by angle valve, and the other end of pipeline is connected with vacuum pump 42, and the vacuum pump is without frequency converter, the lid of cushion chamber
Pressure gauge is installed on plate.
SiNXHaving heaters 51 and plasma reactor 52 are installed, heater is internal installs on the cover board of process cavity 5
There is a heating plate of heating wire, plasma reactor is in plate body shape, and plasma reactor is towards SiNXOne face cloth of process cavity
Expired several rows of aperture, there are one the ventilation pipe being connected to all apertures in plasma reactor, ventilation pipe into
Mouth is connected by pipeline with reaction source, and the air source for participating in reaction is NH3(ammonia) and SiH4(silane), passes through air distribution system
Mass flow controller constant current be conveyed to plasma reactor.SiNXProcess cavity passes on left pipeline and balance air source
It is connected, SiNXThe bottom of process cavity is connected with pipeline by angle valve, and the other end of pipeline is connected with vacuum pump 53, SiNXProcess cavity
Cover board on pressure gauge is installed.
Cooler is mounted in the bottom plate and cover board of cooling chamber 6, cooler is made of water cooling pipeline, passes through cooling water
Flowing takes away heat to reduce silicon temperature.
The pipeline that passes on left of discharging chamber 7 is connected with balance air source, and the bottom of discharging chamber is connected with pipeline by angle valve, pipe
The other end on road is connected with vacuum pump 71, and pressure gauge is equipped on the cover board of discharging chamber.
All cavitys are mounted on slide glass transmission mechanism.Slide glass transmission mechanism includes motor 8, driven wheel 9 and idler wheel 10, into
Expect that the left and right sides of chamber, preheater, cushion chamber, cooling chamber and discharging chamber are respectively mounted there are one motor and multiple driven wheels,
ALD process cavities and SiNXThe left and right sides of process cavity are respectively mounted there are two motor and multiple driven wheels, two neighboring driven wheel
Between be separated with certain distance, generally 30cm, the motor of each cavity side is connected with driven wheel by driving belt, driven wheel
Wheel shaft is equipped with idler wheel on one end within the cavity.
Electrical cabinet is located at the side of ALD process cavities and cushion chamber, and control circuit is equipped in electrical cabinet, and control circuit is soft
Combination of hardware structure, control circuit are connected by controlling cable with each electric component in filming equipment respectively, control circuit control
The working condition of each electric component in entire filming equipment, as the operating of the switch, motor of pneumatic door, the operating of vacuum pump plus
The power on/off of thermal element, break-make gas of air source etc..
The course of work：
1, silicon chip to be coated is placed on slide glass frame, and No.1 pneumatic door is opened, and is loaded with the slide glass frame of silicon chip from No.1 gas
Dynamic door enters feed cavity, and motor rotation drives driven wheel by driving belt, then drives idler wheel rotation, slide glass frame by driven wheel
Under the drive of left and right sides idler wheel, entered in the feed cavity under normal pressure state from No.1 pneumatic door, then No.1 pneumatic door
It closes.
2, the vacuum pump of feed cavity vacuumizes feed cavity, while the infrared lamp on feed cavity cover board carries out soon silicon chip
Speed heating.
3, when vacuum degree reaches e-2mbar in feed cavity, the solenoid valve of feed cavity balance air source is opened, into feed cavity
It is passed through pressure balance gas nitrogen, charging cavity pressure is made to pass through each cavity cover with the pressure balance of preheater and ALD process cavities
Pressure gauge on plate judges whether each chamber pressure balances, and after reaching pressure balance, No. two pneumatic doors are opened.
4, slide glass frame enters preheater by No. two pneumatic doors, after slide glass frame is completely into preheater No. two it is pneumatic
Door is closed, and the heating plate in preheater is evenly heated silicon chip.
5, it at this point, the vacuum pump of feed cavity again vacuumizes feed cavity, when vacuum degree reaches e-2mabr, then is passed through
Nitrogen makes its pressure to normal pressure, and then No.1 pneumatic door opening, next slide glass frame enter feed cavity.
6, the slide glass frame in preheater slows down under the driving of motor moves ahead, and enters in ALD process cavities, passes through
When below the reactor of ALD process cavities, the air source (TMA and deionized water) of reaction is participated in by the quality in air distribution system
It is passed through in reactor to flow controller constant current, the silicon chip table being uniformly fed by the aperture being covered on reactor on slide glass frame
Face is chemically reacted, and the Al of first layer is carried out to silicon chip2O3Plated film, when completing plated film by the heating plate pair in ALD process cavities
Silicon chip is heated, this process is completed from into ALD process cavities to the moving process for leaving ALD process cavities in slide glass frame
's.
7, motor accelerated service at this time makes slide glass frame quickly drive towards No. three pneumatic doors.Cushion chamber has been extracted before this
Vacuum is passed through balanced gas nitrogen to cushion chamber to e-2mbar when reaching e-2mbar, in buffer cavity pressure and ALD works
No. three pneumatic doors have been opened after skill cavity pressure is equal, and slide glass frame enters cushion chamber.
8, after slide glass frame is completely into cushion chamber, No. three pneumatic doors are closed, and the heating plate in cushion chamber adds silicon chip
The vacuum pump of heat, simultaneous buffering chamber vacuumizes cushion chamber, until vacuum degree reaches e-2mbar.
9, when the pressure in cushion chamber reaches e-2mabr, the solenoid valve of cushion chamber balance air source is opened, into cushion chamber
It is passed through pressure balance gas ammonia, the pressure rise in cushion chamber is made to arrive and SiNXThe pressure of process cavity is consistent, passes through each cavity
Pressure gauge on cover board judges whether each chamber pressure balances.
10, No. four pneumatic doors are opened, slide glass frame rapidly enters SiNXProcess cavity, first by SiNXHeating plate pair in process cavity
Silicon chip is heated.
11, slide glass frame is completely into SiNxAfter process cavity, No. four pneumatic doors are closed, and decelerating through motor is run at this time, makes silicon chip
Slower speeds pass through SiNxAir source (the NH of reaction is participated in the lower section of reactor in process cavity3And SiH4) by air distribution system
Mass flow controller constant current be passed through in reactor, be uniformly fed on slide glass frame by the aperture being covered on reactor
Silicon chip surface is chemically reacted, and the SiN of the second layer is carried out to silicon chipxPlated film, this process are in slide glass frame from into SiNxWork
Skill chamber is to leaving SiNxIt is completed in the moving process of process cavity, when slide glass frame leaves SiN completelyxIn process cavity after reactor, this
When silicon chip double manufacturing process (Al2O3Plated film and SiNxPlated film) it completes.
12, motor accelerated service, slide glass frame quickly leave SiNxProcess cavity makes silicon chip quickly leave and adds into cooling chamber
Heat source reduces silicon chip surface temperature.There is water cooling pipeline in cooling chamber bottom plate, cover board, by cold in flowing through in water cooling tube
But water takes away heat to realize cooling, achievees the purpose that reduce silicon temperature.
13, SiN is being carried outxSimultaneously, discharging chamber has been extracted vacuum to e-2mbar to plated film, is closed when reaching e-2mbar
Discharging chamber angle valve is simultaneously passed through balanced gas ammonia to discharging chamber, and discharge cavity pressure and SiNxAfter process chamber pressure is equal No. five it is pneumatic
Door, which has been opened, waits for slide glass frame to enter.Slide glass frame passes through cooling chamber, then continues into discharging chamber, completely into discharging chamber
Afterwards, No. five pneumatic doors are closed.
14, the vacuum pump of discharging chamber vacuumizes it, stops vacuumizing after its pressure is extracted into e-2mbar from e-1mbar,
Balanced gas NH3 is passed through into discharging chamber again, its pressure is made to reach normal pressure, then opens No. six pneumatic doors, slide glass frame carries
The silicon chip for completing double manufacturing process comes out from No. six pneumatic doors, leaves discharging chamber, completes entire double manufacturing process productions of silicon chip
Process.
15, after slide glass frame leaves discharging chamber, No. six pneumatic doors are closed.The vacuum pump of discharging chamber is evacuated down to e- to it at this time
Then 2mabr is passed through balanced gas NH3 into discharging chamber, after so that its pressure is reached e-1mbar, then open No. five pneumatic doors, under
One slide glass frame enters discharging chamber.Slide glass frame is arranged in order one by one completes double manufacturing process production processes in order.
The utility model increases ALD process cavities on the basis of original plasma enhanced chemical vapor deposition equipment
And cushion chamber, ALD process cavities realize Al2O3Passivation technology processing procedure is carried on the back, the Al of silicon chip is completed2O3Plated film, SiNXProcess cavity realizes silicon
The SiN of piecexPlated film so that silicon chip comes out from discharging chamber again after being entered by feed cavity, can disposably complete Al2O3Plated film and
SiNxThe deposition of the two membranes of plated film improves the performance of solar battery sheet.And the technology upgrading for passing through the utility model is transformed,
So that facing the single manufacturing process (SiN being eliminated originallyxPlated film) equipment have the double manufacturing process (Al of production2O3Plated film
And SiNxPlated film) function, have very high single machine cost advantage and the lower advantage of overall cost, avoid material and equipment
Waste, the input cost of equipment is greatly saved, have good promotional value.The structure-improved of the utility model, was both fitted
Conjunction is transformed SiNA generation filming equipments, also is adapted for being transformed SiNA bis- generations filming equipments.
Claims (5)
1. a kind of silicon solar cell back is passivated duplicature manufacturing process filming equipment, including feed cavity, preheater, SiNx works
Skill chamber, cooling chamber and discharging chamber, it is characterised in that further include ALD process cavities and cushion chamber, feed cavity, preheater, ALD techniques
Chamber, cushion chamber, SiNxSuccessively in tandem, the feed side of feed cavity is equipped with No.1 pneumatic door for process cavity, cooling chamber and discharging chamber,
No. two pneumatic doors are connected between feed cavity and preheater, preheater is connected with ALD process cavities, ALD process cavities and buffering
No. three pneumatic doors, cushion chamber and SiN are connected between chamberxNo. four pneumatic doors, SiN are connected between process cavityxProcess cavity and cooling
Chamber is connected, and No. five pneumatic doors are connected between cooling chamber and discharging chamber, and the exit side of discharging chamber is equipped with No. six pneumatic doors, all chambers
Body is equipped with slide glass transmission mechanism.
2. a kind of silicon solar cell back according to claim 1 is passivated duplicature manufacturing process filming equipment, feature
It is that the ALD process cavities are equipped with seal cover board, seal cover board is equipped with the internal heating plate equipped with heating wire and implantation
The reactor of reaction source, the ALD process cavities are connected by pipeline and vacuum pump, balance air source respectively, ALD process cavities it is close
It covers plate and is equipped with pressure gauge.
3. a kind of silicon solar cell back according to claim 2 is passivated duplicature manufacturing process filming equipment, feature
It is that the reactor is in plate body shape, the one side of reactor towards the ALD process cavities is equipped with multiple rows of aperture, in reactor
If there are one the ventilation pipe being connected to the aperture, the import of ventilation pipe is connected with reaction source.
4. a kind of silicon solar cell back according to claim 1 is passivated duplicature manufacturing process filming equipment, feature
It is that the cushion chamber is equipped with cover board, on cover board and cushion chamber bottom is equipped with the internal heating plate that heating wire is housed, described
Cushion chamber be connected respectively by pipeline and vacuum pump, balance air source, the cover board of cushion chamber is equipped with pressure gauge.
5. a kind of silicon solar cell back passivation duplicature manufacturing process plated film according to claim 1 or 2 or 3 or 4 is set
It is standby, it is characterised in that the slide glass transmission mechanism includes motor, driven wheel and idler wheel, and the lateral surface of each cavity is equipped with 1~2
A motor and multiple driven wheels, motor are connected with driven wheel by driving belt, the wheel shaft of driven wheel one end within the cavity
It is equipped with the idler wheel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820064022.8U CN207845777U (en) | 2018-01-15 | 2018-01-15 | A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820064022.8U CN207845777U (en) | 2018-01-15 | 2018-01-15 | A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207845777U true CN207845777U (en) | 2018-09-11 |
Family
ID=63414585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820064022.8U Active CN207845777U (en) | 2018-01-15 | 2018-01-15 | A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207845777U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111041458A (en) * | 2019-12-31 | 2020-04-21 | 湖南红太阳光电科技有限公司 | Continuous PECVD equipment |
| CN111628051A (en) * | 2020-06-19 | 2020-09-04 | 湖南红太阳光电科技有限公司 | Flat plate type ALD and PECVD combined equipment for growing aluminum oxide and silicon nitride films |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN114540797A (en) * | 2022-03-25 | 2022-05-27 | 厦门韫茂科技有限公司 | Material moving structure of continuous ALD coating equipment |
| CN114657538A (en) * | 2022-03-25 | 2022-06-24 | 厦门韫茂科技有限公司 | Cavity structure of continuous ALD coating equipment |
| CN114657537A (en) * | 2022-03-25 | 2022-06-24 | 厦门韫茂科技有限公司 | Continuous ALD coating equipment |
-
2018
- 2018-01-15 CN CN201820064022.8U patent/CN207845777U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111041458A (en) * | 2019-12-31 | 2020-04-21 | 湖南红太阳光电科技有限公司 | Continuous PECVD equipment |
| CN111628051A (en) * | 2020-06-19 | 2020-09-04 | 湖南红太阳光电科技有限公司 | Flat plate type ALD and PECVD combined equipment for growing aluminum oxide and silicon nitride films |
| CN113122827A (en) * | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN114540797A (en) * | 2022-03-25 | 2022-05-27 | 厦门韫茂科技有限公司 | Material moving structure of continuous ALD coating equipment |
| CN114657538A (en) * | 2022-03-25 | 2022-06-24 | 厦门韫茂科技有限公司 | Cavity structure of continuous ALD coating equipment |
| CN114657537A (en) * | 2022-03-25 | 2022-06-24 | 厦门韫茂科技有限公司 | Continuous ALD coating equipment |
| CN114540797B (en) * | 2022-03-25 | 2023-09-08 | 厦门韫茂科技有限公司 | Material moving structure of continuous ALD (atomic layer deposition) film plating equipment |
| CN114657537B (en) * | 2022-03-25 | 2024-01-09 | 厦门韫茂科技有限公司 | Continuous ALD (atomic layer deposition) film plating equipment |
| CN114657538B (en) * | 2022-03-25 | 2024-02-02 | 厦门韫茂科技有限公司 | Cavity structure of continuous ALD (atomic layer deposition) film plating equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207845777U (en) | A kind of silicon solar cell back passivation duplicature manufacturing process filming equipment | |
| CN105925960B (en) | A kind of atomic layer deposition vacuum coater for solar battery sheet production | |
| CN108149224A (en) | A kind of plasma-assisted atomic layer deposition apparatus | |
| CN109943826A (en) | A kind of multi-functional composite deposition equipment and its preparation process | |
| CN110335901B (en) | Photovoltaic cell surface passivation system and passivation method | |
| CN108149225A (en) | A kind of vacuum reaction device and reaction method | |
| CN102017168B (en) | Apparatus for manufacturing thin film solar cell | |
| CN110735130B (en) | Tubular PECVD (plasma enhanced chemical vapor deposition) equipment and method for preparing back passivation film | |
| CN101962759A (en) | PECVD system with internal heater | |
| CN101165205A (en) | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet | |
| CN104947086A (en) | Film coating system and film coating method for producing solar battery piece | |
| CN110537243A (en) | For forming the method and apparatus and semiconductor substrate of film layer on a semiconductor substrate | |
| CN105296955A (en) | Method for preparing copper films through plasma-enhanced atomic layer deposition | |
| CN102808164A (en) | Cavity device and substrate process unit with same | |
| CN207062372U (en) | Automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system | |
| CN107623052A (en) | A kind of solar battery sheet passivation Al2O3Coating system and method | |
| CN101999172B (en) | Apparatus for manufacturing thin film solar cell | |
| CN2404215Y (en) | Apparatus for producing non-crystal silicon thin film solar energy battery | |
| CN206915994U (en) | A kind of 3D glass heat pressing forming machines | |
| CN102517564A (en) | Gas purging system and method in LPCVD technique cavity | |
| CN204959035U (en) | A coating film system for producing solar wafer | |
| CN218951490U (en) | Atomic layer deposition reaction device | |
| CN109852946A (en) | A kind of film plating process and solar battery | |
| CN207233760U (en) | Al2O3 coating systems are used in a kind of solar battery sheet passivation | |
| CN103938187B (en) | Large area film deposition PECVD electrode structure and equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |